CN110137225A - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- CN110137225A CN110137225A CN201910366798.4A CN201910366798A CN110137225A CN 110137225 A CN110137225 A CN 110137225A CN 201910366798 A CN201910366798 A CN 201910366798A CN 110137225 A CN110137225 A CN 110137225A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Abstract
A kind of OLED display panel, including thin-film transistor array base-plate, OLED light-emitting component and pixel defining layer, the pixel defining layer includes main pixel defining layer and sub-pixel definition layer, at least one first opening is offered on the sub-pixel definition layer, at least one OLED light-emitting component and the main pixel defining layer are set in first opening.By increasing by one layer of sub-pixel definition layer containing hydrophobic surface, during preparing white light OLED luminescent device, it is advantageously implemented solution process, and then promote the stock utilization of white light OLED device.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of OLED display panel and preparation method thereof.
Background technique
OLED (Organic Light Emitting Diode, organic electroluminescent LED) is with its good self-luminous
The advantages such as characteristic, high contrast, high reaction speed and Flexible Displays, are widely applied.Currently, OLED display is realized
The mode of full-color display has following three kinds: (1), using three kinds of luminous organic materials of red, green, blue directly shining；(2), white has
Machine luminescent device and colored filter cooperation；(3) blue light-emitting layer and the cooperation of Color Conversion layer.
It is the technology of current large scale OLED display volume production that white organic light emitting device and colored filter cooperation, which shine,
Route, each pixel are made of white organic light emitting device and red, green, blue three-colour filter, and white light can get by optical filter
Three primary colours, and then realize full-color display.White luminous device is deposited on substrate by using open mask plate, but due to
The utilization rate of organic material is low, and in order to guarantee the display quality for the white luminous device being deposited, the vapor deposition processing procedure number of plies needed is more,
Complex process.
Summary of the invention
The present invention provides a kind of OLED display panel and preparation method thereof, to solve the preparation of existing OLED display panel
Method prepares white luminous device by evaporation coating method, and is reduced using the utilization rate that evaporation coating method will lead to organic material,
The film layer quantity for needing to be deposited is more, and then the problem of lead to complex process.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of OLED display panel, comprising: thin-film transistor array base-plate is set to the film crystal
Multiple OLED light-emitting components in pipe array substrate and the pixel definition being set on the thin-film transistor array base-plate
Layer；The OLED light-emitting component includes first electrode layer, luminescent layer, the second electrode lay, and the pixel defining layer includes main pixel
Definition layer and sub-pixel definition layer；Wherein, at least one first opening is offered on the sub-pixel definition layer, at least described in one
OLED light-emitting component and the main pixel defining layer are set in first opening.
In at least one embodiment of the invention, multiple second openings, an institute are offered in the main pixel defining layer
OLED light-emitting component is stated to be correspondingly arranged in second opening.
In at least one embodiment of the invention, the sub-pixel definition layer deviates from the thin-film transistor array base-plate
A side surface be higher than the main pixel defining layer deviate from the thin-film transistor array base-plate a side surface.
In at least one embodiment of the invention, the inner wall of the first opening of the sub-pixel definition layer is in slope climbing type knot
Structure.
In at least one embodiment of the invention, the sub-pixel definition layer covers the master in first opening
A part of pixel defining layer.
In at least one embodiment of the invention, the sub-pixel definition layer is organic photoresist containing fluorine element, institute
The surface for stating sub-pixel definition layer is hydrophobic surface.
In at least one embodiment of the invention, offered on the sub-pixel definition layer multiple arranged side by side described
First opening, the first electrode layer of multiple OLED light-emitting components are arranged at intervals in first opening.
In at least one embodiment of the invention, first opening is strip.
The present invention also provides a kind of preparation methods of OLED display panel, comprising the following steps:
Step S10 provides a thin-film transistor array base-plate, and the first electricity is formed on the thin-film transistor array base-plate
Pole layer；
Step S20, forms main pixel defining layer on the thin-film transistor array base-plate, and the main pixel defining layer is enclosed
It is arranged around the first electrode layer；
Step S30, forms sub-pixel definition layer on the thin-film transistor array base-plate, and the sub-pixel definition layer encloses
Around the main pixel defining layer；
Step S40 forms luminescent layer and the second electrode lay in the first electrode layer.
In at least one embodiment of the invention, the step S40 includes:
S401 sequentially forms the first hole injection layer, the first hole passes using solution process in the first electrode layer
Defeated layer, the first luminescent layer；
S402, using open mask plate, be successively deposited on the blue light emitting material layer the first electron transfer layer and
Conductive intermediate layer；
S403 sequentially forms the second hole injection layer, the second hole passes using solution process in the conductive intermediate layer
Defeated layer, electronic barrier layer, the second luminescent layer, the second electron transfer layer and hole blocking layer；
The second electrode lay is deposited on the hole blocking layer using open mask plate in S404.
The invention has the benefit that by increasing by one layer of sub-pixel definition layer containing hydrophobic surface, it is white preparing
During light OLED luminescent device, it is advantageously implemented solution process, and then promote the stock utilization of white light OLED device.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the top view of the OLED display panel of the embodiment of the present invention one；
Fig. 2 is the schematic cross-section of A-A ' in Fig. 1；
Fig. 3 is the structural schematic diagram for the OLED light-emitting component that the present invention implements one；
Fig. 4 is the top view of the sub-pixel definition layer of the embodiment of the present invention one；
Fig. 5 is the top view of the main pixel defining layer of the embodiment of the present invention one；
Fig. 6 is the top view of the OLED display panel of the embodiment of the present invention two；
Fig. 7 is the schematic cross-section of B-B ' in Fig. 6；
Fig. 8 is the flow chart of the preparation method of OLED display panel of the invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention is directed to the preparation method of existing OLED display panel, and white luminous device is prepared by evaporation coating method
Part, and reduced using the utilization rate that evaporation coating method will lead to organic material, the film layer quantity for needing to be deposited is more, leads to complex process
The problem of, the present embodiment is able to solve the defect.
Embodiment one
As shown in FIG. 1 to 3, the present embodiment provides a kind of OLED display panels 100, including TFT (Thin Film
Transistor, thin film transistor (TFT)) array substrate 10, the OLED that is set on the thin-film transistor array base-plate 10 shine member
Part 20 and the pixel defining layer 30 being set on the thin-film transistor array base-plate 10.
Wherein, the pixel defining layer 30 includes main pixel defining layer 31 and is arranged around the main pixel defining layer 31
Sub-pixel definition layer 32, the main pixel defining layer 31 to define pixel region, the sub-pixel definition layer with to avoid
The overflow of solution during solution process.
The OLED light-emitting component 20 includes first electrode layer 21, luminescent layer and the second electrode lay 29, described to shine
Layer includes the first luminescent layer 24 and the second luminescent layer 24 '.
As shown in Figure 1 and Figure 4, being arranged side by side on the sub-pixel definition layer 32 has multiple first openings 321, and described first
Opening 321 extends upward through the sub-pixel definition layer 32 in thicknesses of layers side.Multiple OLED light-emitting components 20 and the master
Pixel defining layer 31 is set in first opening 321, and first opening 321 is strip.
As shown in Figure 1 and Figure 5, it is spaced apart in the main pixel defining layer 31 in each first opening 321
Equipped with multiple second openings 311, second opening 311 extends upward through the main pixel defining layer 31 in thicknesses of layers side.
One second opening 311 corresponds to a sub-pixel, and multiple first array of sub-pixels are distributed in described
On thin-film transistor array base-plate.The subelement of the OLED light-emitting component 20 is fully located in second opening 311, than
As the first electrode layer 21 of the OLED light-emitting component 20 is located in second opening 311.
As shown in Fig. 2, the main pixel defining layer 31 is high away from the surface of 10 side of thin-film transistor array base-plate
Deviate from the surface of 10 side of thin-film transistor array base-plate in the first electrode layer 21, the main pixel defining layer 31 is covered
Lid is located at a part of the first electrode layer 21 in second opening 311.
The sub-pixel definition layer 32 is higher than the main picture away from the surface of 10 side of thin-film transistor array base-plate
Plain definition layer 31 deviates from the surface of 10 side of thin-film transistor array base-plate.
The sub-pixel definition layer 32 covers a part of the main pixel defining layer 31, first opening 321 it is interior
Wall is made of the main pixel defining layer 31 and the sub-pixel definition layer 32, and the inner wall of first opening 321 is in slope climbing type
Structure, since during preparing sub-pixel definition layer 32, etching liquid can have transversal erosion, sub-pixel definition layer
Inverted trapezoidal structure is caused vulnerable to over etching in bottom, and then influences pixel aperture ratio, and slope climbing type structure can alleviate transversal erosion
Caused by influence.
The sub-pixel definition layer 32 plays the role of avoiding making using solution process as barricade and carrying solution
When the standby OLED light-emitting component 20, solution overflows the preparation region of setting, pollutes to adjacent area.The sub-pixel is fixed
Adopted layer 32 be organic photoresist containing fluorine element, the exposed surface of the sub-pixel definition layer 31 have hydrophobicity, into
During the solution process such as row inkjet printing, drop accumulation can be avoided on the sub-pixel definition layer 32.
As shown in figure 3, the OLED light-emitting component 20 is white light OLED light-emitting component, the OLED light-emitting component 20 includes
The first electrode layer 21 that sequentially forms, the first hole injection layer 22, the first hole transmission layer 23, first the 24, first electricity of luminescent layer
Sub- transport layer 25, conductive intermediate layer 26, the second hole injection layer 22 ', the second hole transmission layer 23 ', electronic barrier layer 27,
Two luminescent layers 24 ', the second electron transfer layer 25, hole injection layer 28 and the second electrode lay 29.
The OLED light-emitting component 20 can be used the mode that vapor deposition processing procedure and solution process combine and prepare, the OLED hair
In optical element 20, at least one element is prepared by the way of solution process, and the solution process includes inkjet printing, silk screen
The modes such as printing, spin coating, slit extrusion coated, blade coating, but it is not limited to these.According to vapor deposition mode, then using open
Mask plate, wherein orthographic projection of the open mask plate on the thin-film transistor array base-plate 10 is in the sub-pixel
In the outer boundary area defined of definition layer.
Specifically, first hole injection layer 22, first hole transmission layer 23 and first luminescent layer 24
It is prepared using inkjet printing mode, vapor deposition can be used in the film layer after first luminescent layer 24 or prepared by inkjet printing mode.
Wherein, the first electrode layer 21 is anode, and the anode is tin indium oxide-compound sun of three layers of silver-tin indium oxide
Pole structure, the second electrode lay 29 are cathode, and the cathode is magnesium-silver composition metal.The opening of second opening 311
Size is determined according to the size of the annode area.
First luminescent layer 24 is blue light-emitting layer, and second luminescent layer 24 ' is Yellow luminous layer.
As shown in figure 8, the present embodiment also provides a kind of preparation method of OLED display panel, comprising:
Step S10 provides a thin-film transistor array base-plate 10, and is formed on the thin-film transistor array base-plate 10
One electrode layer 21；
Tin indium oxide, silver electrode, tin indium oxide film layer, shape is successively deposited on 10 surface of thin-film transistor array base-plate
At multiple first electrode layers 21, the first electrode layer 21 is composite anode.
Step S20 forms main pixel defining layer 31, the main pixel definition on the thin-film transistor array base-plate 10
Layer 31 is arranged around the first electrode layer 21；
Silicon oxide film is deposited on the thin-film transistor array base-plate 10, the silicon oxide film is exposed later
Light, development, the processing procedures such as etching, removing, form the patterned main pixel defining layer 31, the film of the main pixel defining layer 31
Layer is with a thickness of 10~100 nanometers, and the main pixel defining layer 31 is around the first electrode layer 21 setting, and adjacent described the
The pattern of main pixel defining layer between one electrode layer 21 is discontinuous.
Step S30 forms sub-pixel definition layer 32, the sub-pixel definition on the thin-film transistor array base-plate 10
Layer 32 surrounds the main pixel defining layer 31；
Organic photoresist containing fluorine element is deposited on the thin-film transistor array base-plate 10, which is exposed
After light, development, the patterned sub-pixel definition layer 32 is formed, the thicknesses of layers of the sub-pixel definition layer 32 is 500~
2500 nanometers, the fluorine element of organic photoresist after overexposure, development spills into the surface of organic photoresist, so that the institute formed
The surface for stating sub-pixel definition layer 32 has hydrophobicity；
The surrounding of each first electrode layer 21 is each formed with the sub-pixel definition layer 32, and the sub-pixel is fixed
Adopted layer 32 is higher than the main pixel defining layer 31 away from described thin away from a side surface of the thin-film transistor array base-plate 10
One side surface of film transistor array substrate 10.
Step S40 forms luminescent layer and the second electrode lay 29 in the first electrode layer 21；
First with solution process, specifically by the way of inkjet printing, in 21 surface of first electrode layer successively shape
At the first hole injection layer 22, the first hole transmission layer 23 and the first luminescent layer 24, first luminescent layer 24 is blue hair
Photosphere；
Recycle open mask plate that the first electron transfer layer 25 is successively deposited on 24 surface of the first luminescent layer and leads
Electric middle layer 26, the area of the open mask plate is in the region that the outer boundary of the sub-pixel definition layer 32 is encircled a city, tool
Body, the shortest distance of outer boundary of boundary to the sub-pixel definition layer 32 of the open mask plate is 5~50 micro-
Rice；
Later, using solution process, specifically by the way of inkjet printing, in 26 surface of conductive intermediate layer successively shape
It is passed at the second hole injection layer 22 ', the second hole transmission layer 23 ', electronic barrier layer 27, the second luminescent layer 24 ', the second electronics
Defeated layer 25, hole injection layer 28；
Finally, magnesium-silver composite material is deposited on the hole injection layer 28 using open mask plate, formed
The second electrode lay 29, the second electrode lay 29 are cathode.
The method also includes being packaged to the OLED light-emitting component 20, specific packaging method can refer to existing skill
Art, which is not described herein again.
The method combines inkjet printing technology with evaporation coating technique, and mode is flexible, and can improve OLED light-emitting component
Utilization rate
Embodiment two
As shown in Figure 6 and Figure 7, one first opening, the OLED display surface are offered on the sub-pixel definition layer 32
The pixel of plate is respectively positioned in first opening, i.e., the solid section of the described sub-pixel definition layer 32 is set to the film crystal
The periphery of pipe array substrate.
The sub-pixel definition layer 32 is closed structure, and the sub-pixel definition layer surrounds the main pixel defining layer 31
Setting, and the sub-pixel definition layer 32 is higher than the main pixel away from the surface of 10 side of thin-film transistor array base-plate
Definition layer 31 deviates from the surface of 10 side of thin-film transistor array base-plate.
Compared with embodiment one, the sub-pixel definition layer 32 in the present embodiment is provided only on the thin film transistor (TFT) array base
The periphery of plate 10, using this design purpose, be prevent the effect of ink overflow in print procedure, and using this design before
It puts, the vapor deposition that open mask plate carries out film layer can be used.
Other structures are the same as example 1, and specifically refer to embodiment one.
The utility model has the advantages that being shone by increasing by one layer of sub-pixel definition layer containing hydrophobic surface preparing white light OLED
In device process, it is advantageously implemented solution process, and then promote the stock utilization of white light OLED device.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of OLED display panel characterized by comprising
Thin-film transistor array base-plate；
The multiple OLED light-emitting components being set on the thin-film transistor array base-plate, the OLED light-emitting component include first
Electrode layer, luminescent layer, the second electrode lay；And
The pixel defining layer being set on the thin-film transistor array base-plate, the pixel defining layer include main pixel defining layer
With sub-pixel definition layer；Wherein,
At least one first opening, at least one OLED light-emitting component and the main pixel are offered on the sub-pixel definition layer
Definition layer is set in first opening.
2. OLED display panel according to claim 1, which is characterized in that offered in the main pixel defining layer multiple
Second opening, an OLED light-emitting component are correspondingly arranged in second opening.
3. OLED display panel according to claim 2, which is characterized in that the sub-pixel definition layer deviates from the film
One side surface of transistor (TFT) array substrate is higher than the side that the main pixel defining layer deviates from the thin-film transistor array base-plate
Surface.
4. OLED display panel according to claim 3, which is characterized in that the first opening of the sub-pixel definition layer
Inner wall is in slope climbing type structure.
5. OLED display panel according to claim 3, which is characterized in that the sub-pixel definition layer covering described first
A part of the main pixel defining layer in opening.
6. OLED display panel according to claim 1, which is characterized in that the sub-pixel definition layer is to contain fluorine element
Organic photoresist, the surface of the sub-pixel definition layer is hydrophobic surface.
7. OLED display panel according to claim 2, which is characterized in that offered on the sub-pixel definition layer multiple
First opening arranged side by side, the first electrode layer of multiple OLED light-emitting components are arranged at intervals at first opening
It is interior.
8. OLED display panel according to claim 7, which is characterized in that first opening is strip.
9. a kind of preparation method of OLED display panel, which comprises the following steps:
Step S10 provides a thin-film transistor array base-plate, forms first electrode on the thin-film transistor array base-plate
Layer；
Step S20, forms main pixel defining layer on the thin-film transistor array base-plate, and the main pixel defining layer surrounds institute
State first electrode layer setting；
Step S30, forms sub-pixel definition layer on the thin-film transistor array base-plate, and the sub-pixel definition layer surrounds institute
State main pixel defining layer；
Step S40 forms luminescent layer and the second electrode lay in the first electrode layer.
10. preparation method according to claim 9, which is characterized in that the step S40 includes:
S401 sequentially forms the first hole injection layer, the first hole transport using solution process in the first electrode layer
Layer, the first luminescent layer；
The first electron transfer layer and conduction is successively deposited on the blue light emitting material layer using open mask plate in S402
Middle layer；
S403 sequentially forms the second hole injection layer, the second hole transport using solution process in the conductive intermediate layer
Layer, electronic barrier layer, the second luminescent layer, the second electron transfer layer and hole blocking layer；
The second electrode lay is deposited on the hole blocking layer using open mask plate in S404.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910366798.4A CN110137225A (en) | 2019-05-05 | 2019-05-05 | OLED display panel and preparation method thereof |
| PCT/CN2019/087917 WO2020224010A1 (en) | 2019-05-05 | 2019-05-22 | Oled display panel and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910366798.4A CN110137225A (en) | 2019-05-05 | 2019-05-05 | OLED display panel and preparation method thereof |
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| CN110137225A true CN110137225A (en) | 2019-08-16 |
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| CN201910366798.4A Pending CN110137225A (en) | 2019-05-05 | 2019-05-05 | OLED display panel and preparation method thereof |
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| WO (1) | WO2020224010A1 (en) |
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| CN111477663A (en) * | 2020-04-22 | 2020-07-31 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
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| CN111477663B (en) * | 2020-04-22 | 2022-10-04 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
| CN111710696A (en) * | 2020-06-04 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN111710696B (en) * | 2020-06-04 | 2023-06-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113097260A (en) * | 2021-03-24 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and display device |
| CN113437119A (en) * | 2021-06-10 | 2021-09-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and display device |
| WO2023155245A1 (en) * | 2022-02-18 | 2023-08-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor, and display device |
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| WO2020224010A1 (en) | 2020-11-12 |
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