CN109473560A - Display panel and its manufacturing method, display device for mounting on vehicle - Google Patents
Display panel and its manufacturing method, display device for mounting on vehicle Download PDFInfo
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- CN109473560A CN109473560A CN201811376590.2A CN201811376590A CN109473560A CN 109473560 A CN109473560 A CN 109473560A CN 201811376590 A CN201811376590 A CN 201811376590A CN 109473560 A CN109473560 A CN 109473560A
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- light emitting
- layer
- emitting diodes
- display panel
- red light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides a kind of display panel, the display panel is divided into multiple pixel units, multiple light emitting diodes are both provided in each pixel unit, multiple light emitting diodes in each pixel unit include red light emitting diodes, wherein, the luminescent layer of the red light emitting diodes is made of the quanta point material that can be inspired feux rouges, and the luminescent layer of other light emitting diodes in the display panel in addition to red light emitting diodes is made of corresponding electroluminescent organic material respectively.The present invention also provides a kind of display device for mounting on vehicle and a kind of manufacturing method of display panel.The display effect of the display device for mounting on vehicle meets the vehicle-mounted product specification in Europe.
Description
Technical field
The present invention relates to mobile unit fields, and in particular, to a kind of display panel, vehicle-mounted aobvious including the display panel
The manufacturing method of showing device and the display panel.
Background technique
With the development of the automobile industry, vehicle interior has been mounted with various display device for mounting on vehicle.Due to car
Environment is different from vehicle external environment, and the requirement to display device for mounting on vehicle is also different from common display device, for example, European vehicle rule are just
Define all standard of display device for mounting on vehicle.In general, the display panel in display device for mounting on vehicle is common organic light emission two
Pole pipe display panel or liquid crystal display panel.But the red display effect of current display panel is unable to satisfy European vehicle
The requirement of rule.
Summary of the invention
The purpose of the present invention is to provide a kind of display panels, the display device for mounting on vehicle including the display panel and described aobvious
Show the manufacturing method of panel.The display panel can satisfy the demand of display device for mounting on vehicle.
To achieve the goals above, as one aspect of the present invention, a kind of display panel, the display panel quilt are provided
Multiple pixel units are divided into, multiple light emitting diodes are both provided in each pixel unit, it is multiple in each pixel unit
Light emitting diode all includes red light emitting diodes, wherein the luminescent layer of the red light emitting diodes is by that can be inspired
The quanta point material of feux rouges is made, other light emitting diodes in the display panel in addition to red light emitting diodes shine
Layer is made of corresponding electroluminescent organic material respectively.
Preferably, multiple light emitting diodes in the pixel unit further include blue LED and green emitting two
The luminescent layer of pole pipe, the blue LED is made of the first electroluminescent organic material, the green LED
Luminescent layer be made of the second electroluminescent organic material.
The quanta point material for being preferably made from the luminescent layer of the red light emitting diodes includes multiple red quantum dots,
Each quantum dot includes the core made of cadmium selenide and the shell made of zinc sulphide or cadmium sulfide, described in the shell cladding
Core.
Preferably, in the thickness of the luminescent layer of the red light emitting diodes in 15nm between 80nm so that described
The emission spectrum dominant wavelength of red light emitting diodes is greater than or equal to 618nm, and color saturation is greater than or equal to 80%.
Preferably, the emission spectrum dominant wavelength of the red light emitting diodes is greater than or equal to 623nm, and color saturation is big
In or equal to 90%.
As the second aspect of the invention, a kind of display device for mounting on vehicle is provided, the display device for mounting on vehicle includes display
Panel, which is characterized in that the display panel is above-mentioned display panel provided by the present invention.
As the third aspect of the invention, a kind of manufacturing method of display panel is provided, wherein the manufacturing method packet
It includes:
Underlay substrate is provided, the underlay substrate is divided into multiple pixel units；
Form light emitting diode, wherein each pixel unit includes multiple light emitting diodes, multiple light-emitting diodes
Pipe includes red light emitting diodes, and the luminescent layers of the red light emitting diodes is by that can be inspired the quanta point material of feux rouges
It is made, the luminescent layer of other light emitting diodes in the display panel in addition to red light emitting diodes respectively by having accordingly
Electroluminescent material is made.
Preferably, multiple light emitting diodes in the pixel unit further include blue LED and green emitting two
The luminescent layer of pole pipe, the blue LED is made of the first electroluminescent organic material, the green LED
Luminescent layer be made of the second electroluminescent organic material.
Preferably, the step of formation light emitting diode includes:
Anode layer is formed, which includes multiple anodes, and each pixel unit corresponds to the sun of multiple insulation gaps
Pole；
Hole injecting material is formed, the hole injecting material includes more correspondingly with multiple light emitting diodes
A hole injection layer, the hole injection layer in the same pixel unit are formed as one；
Hole transport material is formed, the hole transport material includes more correspondingly with multiple light emitting diodes
A hole transmission layer, the hole transmission layer in the same pixel unit are formed as one；
Electron-blocking materials layer is formed, the electron-blocking materials layer includes more correspondingly with multiple light emitting diodes
A electronic barrier layer, the electronic barrier layer in the same pixel unit are formed as one；
Be respectively formed multiple luminous material layers, each luminous material layer include apart from one another by multiple luminescent layers, Duo Gefa
Photosphere is corresponded with multiple light emitting diodes respectively, wherein forms two pole of emitting red light using the method for inkjet printing
The luminescent layer of pipe；
Hole blocking material is formed, the hole blocking material includes more correspondingly with multiple light emitting diodes
A hole blocking layer；
Electron transport material is formed, the electron transport material includes more correspondingly with multiple light emitting diodes
A electron transfer layer, the electron transfer layer in the same pixel unit are formed as one；
Electron injection material layer is formed, the electron injection material layer includes more correspondingly with multiple light emitting diodes
A electron injecting layer, the electron injecting layer in the same pixel unit are formed as one；
Cathode layer is formed, part corresponding with each light emitting diode is formed as the light emitting diode on the cathode layer
Cathode.
The quanta point material for being preferably made from the luminescent layer of the red light emitting diodes includes multiple red quantum dots,
Each quantum dot includes the core made of cadmium selenide and the shell made of zinc sulphide or cadmium sulfide, described in the shell cladding
Core.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is sent out in a pixel unit in the display panel provided by the present invention with top emitting light emitting diode
The arrangement schematic diagram of optical diode；
Fig. 2 is in the display panel provided by the present invention with bottom emitting light emitting diode, luminous two in pixel unit
The schematic diagram of the arrangement of pole pipe；
Fig. 3 is a kind of energy level of each layer of embodiment of red light emitting diodes in display panel provided by the present invention
Distribution map；
Fig. 4 is the spectrogram of red light emitting diodes；
Fig. 5 is the flow chart of manufacturing method provided by the present invention；
Fig. 6 is the flow chart for the display panel that manufacture has pixel unit shown in Fig. 1.
Description of symbols
110: red light emitting diodes 111: the luminescent layer of red light emitting diodes
112: the electron transfer layer of red light emitting diodes
113: the electronic barrier layer of red light emitting diodes
114: the hole transmission layer of red light emitting diodes
115: the hole injection layer of red light emitting diodes
116: the anode of red light emitting diodes
117: the electron injecting layer of red light emitting diodes
118: the cathode of red light emitting diodes
119: the refractive index matching layers of red light emitting diodes
120: green LED 121: the luminescent layer of green LED
122: the electron transfer layer of green LED
123: the electronic barrier layer of green LED
124: the hole transmission layer of green LED
125: the hole injection layer of green LED
126: the anode of green LED
127: the electron injecting layer of green LED
128: the cathode of green LED
129: the refractive index matching layers of green LED
130: blue LED 131: the luminescent layer of blue LED
132: the electron transfer layer of blue LED
133: the electronic barrier layer of blue LED
134: the hole transmission layer of blue LED
135: the hole injection layer of blue LED
136: the anode of blue LED
137: the electron injecting layer of blue LED
138: the cathode of blue LED
139: the refractive index matching layers of blue LED
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
Through present inventor repeatedly the study found that the display effect of current display panel is unable to satisfy the original of logo
Because being, in current organic LED display panel, the feux rouges color that red pixel cell issues is not dark red enough.
Specifically, in European vehicle rule, dominant wavelength and saturation degree to the emitting red light of car-mounted display panel have strictly
Requirement, although however the saturation degree of red color provided by existing organic LED display device can achieve
95% or more, but the dominant wavelength of red light is about 616nm, is not possible to reach the peony of European vehicle rule defined (that is, main wave
Long 618nm to 630nm, central value 623nm).
As one aspect of the present invention, a kind of display panel is provided, the display panel is divided into multiple pixel lists
Member is both provided with multiple light emitting diodes, also, in each pixel unit as depicted in figs. 1 and 2 in each pixel unit
Multiple light emitting diodes all include red light emitting diodes 110, wherein the luminescent layer 111 of red light emitting diodes 110 is by can
The quanta point material for being inspired feux rouges is made, and the luminescent layer of other light emitting diodes is respectively by corresponding organic electroluminescence material
Material is made.That is, in display panel provided by the present invention, red light emitting diodes QLED, and other colors
Light emitting diode is Organic Light Emitting Diode.
Shown in Fig. 4 is the spectrogram of red light emitting diodes, and abscissa is wavelength, and unit nm, ordinate is light intensity
It spends (elctroluminance intensity), intensity here is arbitrary unit, that is, without unit.Such as institute in Fig. 4
Show, when luminous, the dominant wavelength of the feux rouges of sending is luminescent layer red light emitting diodes 110 made of quanta point material
624nm or more.
It is the parameter that red light emitting diodes are glowed shown in table 1.
Table 1
Table 1 it is found that luminescent layer red light emitting diodes made of quanta point material issue feux rouges chromaticity coordinates,
Saturation degree and dominant wavelength are able to satisfy the requirement of European logo.
In addition to this, in the present invention luminescent layer in addition to red light emitting diodes 110 in other light emitting diodes by
Electroluminescent organic material is made.In the prior art, the luminescent layer of light emitting diode is made using electroluminescent organic material
Technical maturity, it is thus possible to improve the overall yield of the display panel and improving the efficiency for manufacturing the display panel.
In the present invention, not made it to the quantity and color of the light emitting diode of other colors in pixel unit special
It is required that being required as long as can satisfy display.As a preferred implementation manner, as depicted in figs. 1 and 2, each pixel list
Member includes three light emitting diodes, that is, each pixel unit includes the red light emitting diodes 110, two pole of green emitting
Pipe 120 and blue LED 130.Correspondingly, the luminescent layer 131 of blue LED 130 is sent out by the first organic electroluminescence
Luminescent material is made, and the luminescent layer 121 of green LED 120 is made of the second electroluminescent organic material.
In the present invention, the corresponding sub-pixel unit of each light emitting diode.Specifically, red light emitting diodes 110
Corresponding to red sub-pixel unit, blue LED 130 corresponds to blue subpixels unit, green LED 120
Corresponding to green sub-pixels unit.
Certainly, the present invention is not limited thereto, for example, each pixel unit can include four light emitting diodes, in addition to
Except red light emitting diodes, green LED and blue LED, each pixel unit can also include issuing
The Organic Light Emitting Diode of other color (such as yellow or white) light.
In the present invention, not made it to the specific material of the first electroluminescent organic material in blue LED special
Limitation, for the ease of film forming, as a preferred implementation manner, first electroluminescent organic material include first shine
Material of main part and the first light emitting guest material being entrained in the first light emitting host material, the first light emitting host material
Energy gap be greater than first light emitting guest material energy gap.
First light emitting host material itself does not have electroluminescent characteristic, and the first light emitting host material is selected from 9,
10- bis- (2- naphthalene) anthracene (i.e. ADN), 2- methyl -9,10- two (2- naphthalene) anthracene (i.e. MADN), (the 2,2- talan of 4,4'- bis-
At least one of base) -1,1'- biphenyl (that is, DPVBi) etc..
First light emitting guest material has the performance of electroluminescent blue light-emitting, wherein first light emitting guest material is described
Doping concentration in first light emitting host material is in 0.2wt% between 20wt%.
In the present invention, special requirement is not done to the specific selection of the first light emitting guest material.For example, first hair
Light guest materials can be fluorescent material, or phosphor material, can also for hot activation delayed fluorescence material (TADF,
Thermally Activated Delayed Fluorescence).For example, the first light emitting guest material can be selected from DSA-Ph
(4,4'- [Isosorbide-5-Nitrae-phenylene two-(1E) -2,1- ethylene diyl] two [N, N- diphenylaniline], belong to fluorescent material), FIrpic
(bis- (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics close iridium, belong to phosphor material), bis- [4- (9,9- dimethyl -9,10- bis-
At least one of hydrogen acridine) phenyl] sulphur sulfone (DMAC-DPS) (belonging to TADF material).
For the ease of film forming, it is preferable that second luminous organic material includes the second light emitting host material and is entrained in
The second light emitting guest material in the second light emitting host material, the energy gap of the second light emitting host material are greater than described the
The energy gap of two light emitting guest materials.Second light emitting host material does not have electroluminescent performance, as a kind of preferred implementation side
Formula, the second light emitting host material can be CBP (i.e. 4,4'- bis- (9- carbazole) biphenyl), mCP (9,9'- (1,3- phenyl) two -9H-
Carbazole) material.Second light emitting guest material has the performance of electroluminescent green light, wherein second light emitting guest material is in institute
The doping concentration in the second light emitting host material is stated in 0.2wt% between 20wt%.
The second light emitting guest material can be fluorescent material as a preferred implementation manner, or phosphor material,
It can also be TADF material.For example, the second light emitting guest material is selected from C545T (10- (2-[4-morpholinodithio base) -2,3,6,7- tetra-
Hydrogen -1,1,7,7- tetramethyl -1H, 5H, 11H- [1] chromene [6,7,8-ij] quinoline piperazine -11- ketone, belongs to fluorescent material),
DPT (5,12-Diphenyltetracene), Ir (ppy) 3 (three (2- phenylpyridines) close iridium, woods luminescent material), 4CzTPN (2,3,
5,6- tetra- (9- carbazyl)-terephthalonitrile, TADF material), in any one or a few.
In the present invention, special limitation is not done to the quanta point material for the luminescent layer that red light emitting diodes are made, only
There is the performance to glow.The quanta point material that the luminescent layer of the red light emitting diodes is made includes multiple quantum
Point, each quantum dot include the core made of cadmium selenide and the shell made of zinc sulphide or cadmium sulfide, the shell cladding
The core.
In the present invention, special limitation is not done to the specific thickness of the luminescent layer of red light emitting diodes, as one kind
Preferred embodiment, the thickness of the luminescent layer of red light emitting diodes can be in 15nm between 80nm, so that the red
The emission spectrum dominant wavelength of light emitting diode is greater than or equal to 618nm, and color saturation is greater than or equal to 80%.
It is further preferred that the emission spectrum dominant wavelength of the red light emitting diodes is greater than or equal to 623nm, color is full
It is greater than or equal to 90% with degree.
In the present invention, each light emitting diode include the anode stacked gradually, hole injection layer, hole transmission layer,
Electronic barrier layer, luminescent layer, hole blocking layer, electron transfer layer, electron injecting layer and cathode.
Be shown in Fig. 3 using ITO production anode, HAT-CN (six cyano -1,4,5,8,9 2,3,6,7,10,11-,
Six azepine benzophenanthrene of 12-) production hole injection layer, α-NPD (2- (1-Naphthyl) -5-phenyl-1,3,4-
Oxadiazole hole transmission layer, TCTA (three (- 9 bases of 4- carbazole-phenyl) amine) production electronic barrier layer including CdSe) are made
Electronics made of the luminescent layer of the quantum dot of shell made of manufactured core and CdS, Alq3 (three (8-hydroxyquinolines) close aluminium) passes
The energy of the red quantum point luminescent diode of cathode made of electron injecting layer made of defeated layer, LiF (lithium fluoride) and Al (aluminium)
Grade figure, wherein ordinate is energy level, and unit eV, abscissa is material.
For the ease of manufacture, in the same pixel unit, the setting of the hole injection layer same layers of multiple light emitting diodes and
It is formed as one, the hole transmission layer same layer of multiple light emitting diodes is arranged and is formed as one, the sky of multiple light emitting diodes
Cave barrier layer same layer is arranged and is formed as one, the electron transfer layer same layer of multiple light emitting diodes is arranged and is formed as one,
The electron injecting layer same layer of multiple light emitting diodes is arranged and is formed as one.
The display panel further includes underlay substrate, and each Organic Light Emitting Diode is formed on underlay substrate.In this hair
In bright, special limitation is not done to the specific material of underlay substrate, for example, the underlay substrate can by rigid material (for example,
Glass) it is made, it can also be made of flexible material (for example, polyester material, polyimide material etc.).
Anode in the light emitting diode can have single layer structure, it is possible to have multilayered structure.Nothing can be used
Anode is made in machine material, also can use organic conductive polymer and anode is made.Inorganic material for making anode can be
Transparent electrode material (for example, ITO, IZO) is also possible to the higher metal material of the work functions such as gold, silver, copper.Work as light-emitting diodes
When pipe is bottom emitting light emitting diode, anode material is preferably transparent electrode material, when light emitting diode is top emitting diode
When, anode is preferably high reflection conductive material, the three-layered node formed such as transparent electrode material ITO/ silver/transparent electrode material ITO
Structure.
The organic conductive polymer that anode can be made can be PEDOT:PSS (poly- (3,4- ethene dioxythiophene)-polyphenyl
Vinyl sulfonic acid).
The hole injection layer should be made using the stronger material of Hole injection capacity, for example, can use HAT-CN
Hole injection layer is made.The present invention is not limited thereto, can use NPB (N, N'- [two (1- naphthalene)-N, the N'- hexichol of p doping
Base] -1,1'- xenyl) -4,4'- diamines) hole injection layer is made in material.For example, F can be used4- TCNQ (2,3,5,6- tetra-
Tetra- cyanogen dimethyl-parabenzoquinone of fluoro- 7,7', 8,8'-) or NDP-9 NPB is doped.
The hole transmission layer is made using the stronger material of cavity transmission ability.Preferably, using p-type organic semiconductor
Material is (for example, in triphenylamine compound, NPB, TPD (bis- (3- the aminomethyl phenyl)-N of N, N'-, N'- diphenylbenzidine) material
Any one) hole transmission layer is made.
Electronic barrier layer is made using the higher p-type organic semiconductor material of lumo energy, for example, can use
Electronic barrier layer is made in 4DPTP3Q or TCTA (4,4', 4 "-three (carbazole -9- base) triphenylamines).
Hole blocking layer is made using the organic n-type semi-conductor material with deeper HOMO energy level (< -6eV), for example, can
The hole blocking layer is made using T2T (2,4,6- tri- (1,1'- xenyl) -1,3,5- triazine) material.
Preferably, using the preferable N-shaped organic semiconducting materials of electron transport ability (for example, TPBi (1,3,5- tri- (1-
Phenyl -1H- benzimidazolyl-2 radicals-yl) benzene), Alq3, BAlq (bis- (2- methyl -8-hydroxyquinoline-N1, O8)-(1,1'- biphenyl -4-
Hydroxyl) aluminium) in any one) electron transfer layer is made.
Preferably, the electron injecting layer is made using the metal of low work function or metallic compound.For example, can adopt
The electron injecting layer is made with LiF, Yb (ytterbium) etc..
Cathode is made in the metal that can use low work function, is made for example, can use at least one of Mg, Ag, Al
The cathode.
For the light emitting diode of top emitting, one layer of refractive index matching layers can also be set above cathode layer.Preferably,
It can use organic material (for example, NPB) material of refractive index greater than 1.7 and the refractive index matching layers be made.
In pixel unit shown in Fig. 1, including red light emitting diodes 110, green LED 120 and blue
Light emitting diode 130.Three light emitting diodes are the light emitting diode of top emitting.
Red light emitting diodes 110 include anode 116, hole injection layer 115, hole transmission layer 114, electronic barrier layer
113, luminescent layer 111, electron transfer layer 112, electron injecting layer 117, cathode 118 and refractive index matching layers 119.
Green LED 120 includes anode 126, hole injection layer 125, hole transmission layer 124, electronic barrier layer
123, luminescent layer 121, electron transfer layer 122, electron injecting layer 127, cathode 128 and refractive index matching layers 129.
Blue LED 130 includes anode 136, hole injection layer 135, hole transmission layer 134, electronic barrier layer
133, luminescent layer 131, electron transfer layer 132, electron injecting layer 137, cathode 138 and refractive index matching layers 139.
Anode 116, anode 126,136 structure of anode is identical, material is also identical.Anode has three-decker, respectively thick
Degree for 150 angstroms first layer ITO layer, with a thickness of 800 angstroms of silver metal layers and with a thickness of 150 angstroms of second layer ITO layer.Anode
116, anode 126 and the interval insulated from each other of anode 136.
Hole injection layer 115, hole injection layer 125,135 material of hole injection layer is identical and is formed as one.Hole note
Entering layer is the PEDOT:PSS material with a thickness of 50 angstroms.
Hole transmission layer 114, hole transmission layer 124, hole transmission layer 134 material be NPB, wherein hole transport
Layer 114 with a thickness of 1500 angstroms, hole transmission layer 124 with a thickness of 1500 angstroms, hole transmission layer 134 with a thickness of 1200 angstroms.
Electronic barrier layer 113, electronic barrier layer 123,133 material of electronic barrier layer is identical and is formed as one, wherein electricity
Sub- barrier layer is the TCTA with a thickness of 50 angstroms.
The luminescent layer 111 of red light emitting diodes with a thickness of 400 angstroms of quanta point material, wherein in quanta point material,
The core of quantum dot is made of cadmium selenide, and the shell of quantum dot is made of cadmium sulfide.
The luminescent layer 121 of green LED is Ir (ppy)3The CBP of doping, wherein Ir (ppy)3Weight percent
For 5%-10%.Luminescent layer 121 with a thickness of 350-450 angstroms.
The luminescent layer 131 of blue LED is the ADN material of DSA-Ph doping, wherein the weight percent of DSA-Ph
Than for 3%-5%.Luminescent layer 131 with a thickness of 150-300 angstroms.
Electron transfer layer 122, the blue-light-emitting of the electron transfer layers 112 of red light emitting diodes, green LED
132 material of electron transfer layer of diode is identical and is formed as one, wherein electron transfer layer with a thickness of 300-350 angstroms, material
Material is TPBi.
Electron injecting layer 127, the green emitting of the electron injecting layers 117 of red light emitting diodes, green LED
The material of the electron injecting layer 137 of diode is identical and is formed as one, wherein and the material of electron injecting layer is Yb, with a thickness of
10 angstroms.
The cathode 118 of red light emitting diodes, the cathode 128 of green LED, blue LED cathode
138 are formed as one and material is identical, wherein the material of cathode is magnesium silver alloy, wherein the mass ratio of magnesium metal and metallic silver
For 1:9, cathode with a thickness of 110-250 angstroms.
The refractive index matching layers 119 of red light emitting diodes, the refractive index matching layers 129 of green LED, blue
139 material of refractive index matching layers of light emitting diode is identical and is formed as one, refractive index matching layers with a thickness of 600-800
Angstrom, material NPB.
In pixel unit shown in Fig. 2, multiple light emitting diodes are bottom emitting light emitting diode.
In embodiment shown in Fig. 2, red light emitting diodes 110 include anode 116, hole injection layer 115, sky
Cave transport layer 114, electronic barrier layer 113, luminescent layer 111, electron transfer layer 112, electron injecting layer 117 and cathode 118.
In embodiment shown in Fig. 2, green LED 120 includes anode 126, hole injection layer 125, sky
Cave transport layer 124, electronic barrier layer 123, luminescent layer 121, electron transfer layer 122, electron injecting layer 127 and cathode 128.
In embodiment shown in Fig. 2, blue LED 130 includes anode 136, hole injection layer 135, sky
Cave transport layer 134, electronic barrier layer 133, luminescent layer 131, electron transfer layer 132, electron injecting layer 137 and cathode 138.
Anode 116, anode 126,136 structure of anode is identical, material is also identical.Anode have single layer structure, for a thickness of
150-300 angstroms of ITO or IZO is made.Anode 116, anode 126 and the interval insulated from each other of anode 136.
Hole injection layer 115, hole injection layer 125,135 material of hole injection layer is identical and is formed as one.Hole note
Entering layer is the HAT-CN material with a thickness of 50 angstroms.
Hole transmission layer 114, hole transmission layer 124, the material of hole transmission layer 134 are identical and be formed as one, hole
Transport layer with a thickness of 300-800 angstroms, material is α-NPD.
Electronic barrier layer 113, electronic barrier layer 123,133 material of electronic barrier layer is identical and is formed as one, wherein electricity
Sub- barrier layer is the TCTA with a thickness of 50-100 angstroms.
The luminescent layer 111 of red light emitting diodes with a thickness of 400 angstroms of quanta point material, wherein in quanta point material,
The core of quantum dot is made of cadmium selenide, and the shell of quantum dot is made of cadmium sulfide.
The luminescent layer 121 of green LED is Ir (ppy)3The CBP of doping, wherein Ir (ppy)3Weight percent
For 5-10%.Luminescent layer 121 with a thickness of 350-450 angstroms.
The luminescent layer 131 of blue LED is the ADN material of DSA-Ph doping, wherein the weight percent of DSA-Ph
Than being 3%.Luminescent layer 131 with a thickness of 150-300 angstroms.
Electron transfer layer 122, the blue-light-emitting of the electron transfer layers 112 of red light emitting diodes, green LED
132 material of electron transfer layer of diode is identical and is formed as one, wherein electron transfer layer with a thickness of 350 angstroms, material is
50% Liq:Alq3.
Electron injecting layer 127, the green emitting of the electron injecting layers 117 of red light emitting diodes, green LED
The material of the electron injecting layer 137 of diode is identical and is formed as one, wherein and the material of electron injecting layer is LiF, with a thickness of
10 angstroms.
The cathode 118 of red light emitting diodes, the cathode 128 of green LED, blue LED cathode
138 are formed as one and material is identical, wherein the material of cathode is aluminium, wherein cathode with a thickness of 1500 angstroms.
The display panel further includes the encapsulated layer being packaged to the underlay substrate for being formed with light emitting diode.In this hair
In bright, the specific structure of encapsulated layer is not done specifically limited, encapsulated layer includes being stacked as a preferred implementation manner,
First inorganic barrier layer, organic planarization layer and the second inorganic barrier layer.Wherein, the material of the first inorganic barrier layer is selected from silicon
Nitride, the oxide of silicon, any one or a few persons in aluminium oxide, with a thickness of 0.5 μm to 1 μm.The material of organic buffer layer
It can be any one in silane, acrylic, epoxy resin.Wherein, the thickness of organic buffer layer can be λ/(4n),
In, λ is the wavelength for the light that light emitting diode issues, and n is the refractive index of organic buffer layer.The material of second inorganic barrier layer is selected from
The nitride of silicon, the oxide of silicon, any one or a few persons in aluminium oxide, with a thickness of 0.5 μm to 1 μm.
As another aspect of the present invention, a kind of display device for mounting on vehicle is provided, the display device for mounting on vehicle includes display
Panel, wherein the display panel is above-mentioned display panel provided by the present invention.
As mentioned above it is possible, the luminescent layer of the red light emitting diodes in the pixel unit of the display panel is by quantum dot
Material is made, and the dominant wavelength for the feux rouges which issues meets the vehicle-mounted product specification in Europe in 623nm.
Also, the luminescent layer in the present invention in addition to red light emitting diodes in other light emitting diodes is by organic electroluminescence
Luminescent material is made, in the prior art, using electroluminescent organic material be made the technique of the luminescent layer of light emitting diode at
It is ripe, it is thus possible to improve the overall yield of the display panel.
As the third aspect of the invention, a kind of manufacturing method of display panel is provided, it can using the manufacturing method
To manufacture above-mentioned display panel provided by the present invention.Specifically, as shown in Figure 5, the manufacturing method includes:
In step S510, underlay substrate is provided, the underlay substrate is divided into multiple pixel units；
In step S520, light emitting diode is formed, wherein each pixel unit includes multiple light-emitting diodes
Pipe, multiple light emitting diodes include red light emitting diodes, and the luminescent layer of the red light emitting diodes is by that can be inspired
The quanta point material of feux rouges is made.
In the present invention, special limitation is not done to the specific material of underlay substrate, either rigid substrates, and can be with
It is flexible base board.
As mentioned above it is possible, anode can be conducting organic material or conductive metallic material or metal and metal aoxidizes
The composite material of object.
It should be pointed out that pixel circuit layer and picture can have been formd on underlay substrate before step S520
Element defines layer.Pixel defining layer includes multiple pixel openings, and each pixel unit includes multiple pixel openings, each pixel openings
One light emitting diode of interior setting.
Specifically, as shown in fig. 6, step S520 may include:
In step S521, anode layer is formed, which includes multiple anodes, and each pixel unit corresponds to multiple
The anode of insulation gap；
In step S522, hole injecting material is formed, the hole injecting material includes and multiple light-emitting diodes
One-to-one multiple hole injection layers are managed, the hole injection layer in the same pixel unit is formed as one；
In step S523, hole transport material is formed, the hole transport material includes and multiple light-emitting diodes
One-to-one multiple hole transmission layers are managed, the hole transmission layer in the same pixel unit is formed as one；
In step S524, electron-blocking materials layer is formed, the electron-blocking materials layer includes and multiple light-emitting diodes
One-to-one multiple electronic barrier layers are managed, the electronic barrier layer in the same pixel unit is formed as one；
In step S525, be respectively formed multiple luminous material layers, each luminous material layer include apart from one another by it is multiple
Luminescent layer, multiple luminescent layers are corresponded with multiple light emitting diodes respectively, wherein are formed using the method for inkjet printing described
The luminescent layer of red light emitting diodes；
In step S526, hole blocking material is formed, the hole blocking material includes and multiple light-emitting diodes
Manage one-to-one multiple hole blocking layers；
In step S527, electron transport material is formed, the electron transport material includes and multiple light-emitting diodes
One-to-one multiple electron transfer layers are managed, the electron transfer layer in the same pixel unit is formed as one；
In step S528, electron injection material layer is formed, the electron injection material layer includes and multiple light-emitting diodes
One-to-one multiple electron injecting layers are managed, the electron injecting layer in the same pixel unit is formed as one；
In step S529, cathode layer is formed, part corresponding with each light emitting diode is formed as on the cathode layer
The cathode of the light emitting diode.
It can use the methods of inkjet printing, spin coating and execute step S522, step S523, step S524 and step S525,
It can use the methods of vapor deposition, inkjet printing or spin coating and execute step S526, step S527, step S528.
In the present invention, the luminescent layer of red light emitting diodes is made by the way of inkjet printing, material can be improved
Utilization rate (up to 90%).
It is easily understood that the manufacturing method can also include sealing to the underlay substrate for being formed with light emitting diode
The step of dress.Correspondingly, the step of encapsulation includes:
In step S540, formed the first inorganic barrier layer, the material of first inorganic barrier layer include the nitride of silicon,
Any one in the oxide of silicon, aluminium oxide or any several persons, wherein the thickness on the first barrier layer 0.5 μm to 1 μm it
Between；
In step S550, form organic planarization layer, the material of the organic planarization layer can for silane, acrylic,
Any one in epoxy resin.Wherein, the thickness of organic buffer layer can be λ/(4n), wherein λ is light emitting diode sending
Light wavelength, n be organic buffer layer refractive index；
In step S560, formed the second inorganic barrier layer, the material of second inorganic barrier layer include the nitride of silicon,
Any one in the oxide of silicon, aluminium oxide or any several persons, wherein the thickness on the second barrier layer 0.5 μm to 1 μm it
Between.
In order to manufacture the display panel including pixel unit shown in Fig. 1, it is preferable that the manufacturing method further include
The following steps carried out between step S520 and step S540:
In step S530, refractive index matching layers are formed.As mentioned above it is possible, the refractive index of refractive index matching layers can be
1.7, thickness can be 30nm to 1000nm.Can use vapor deposition, inkjet printing, spin coating method formed refractive index matching layers.
In order to manufacture the display panel of the light emitting diode shown in Fig. 1 including top emitting, it is preferable that can use
Three layers of anode are made in ITO, silver, ITO, and the mode that can use vapor deposition or magnetron sputtering executes step S510.Correspondingly, Ke Yili
Cathode layer is formed using at least one of Al, Ag, Mg with vapor deposition, magnetron sputtering etc., in order to guarantee the translucency of cathode layer, yin
The thickness of pole layer is preferably in 10nm between 30nm.
It should be pointed out that for the Organic Light Emitting Diode of top emission type, the Organic Light Emitting Diode of different colours
The thickness of electronic barrier layer is different, and for the Organic Light Emitting Diode of bottom emitting type, the organic light emission two of different colours
The thickness of the electronic barrier layer of pole pipe is identical.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of display panel, the display panel is divided into multiple pixel units, is both provided in each pixel unit more
A light emitting diode, multiple light emitting diodes in each pixel unit include red light emitting diodes, which is characterized in that institute
The luminescent layer for stating red light emitting diodes is made of the quanta point material that can be inspired feux rouges, except red in the display panel
The luminescent layer of other light emitting diodes except color light emitting diode is made of corresponding electroluminescent organic material respectively.
2. display panel according to claim 1, which is characterized in that multiple light emitting diodes in the pixel unit are also
Including blue LED and green LED, the luminescent layer of the blue LED is sent out by the first organic electroluminescence
Luminescent material is made, and the luminescent layer of the green LED is made of the second electroluminescent organic material.
3. display panel according to claim 1 or 2, which is characterized in that shining for the red light emitting diodes is made
The quanta point material of layer includes multiple red quantum dots, and each quantum dot includes the core made of cadmium selenide and by zinc sulphide
Or shell made of cadmium sulfide, the shell coat the core.
4. display panel according to claim 3, which is characterized in that in the thickness of the luminescent layer of the red light emitting diodes
Degree in 15nm between 80nm so that the spectrum dominant wavelength of the transmitting light of the red light emitting diodes is greater than or equal to
The transmitting light color saturation of 618nm, the red light emitting diodes are greater than or equal to 80%.
5. display panel according to claim 4, which is characterized in that the spectrum of the transmitting light of the red light emitting diodes
Dominant wavelength is greater than or equal to 623nm, and the transmitting light color saturation of the red light emitting diodes is greater than or equal to 90%.
6. a kind of display device for mounting on vehicle, the display device for mounting on vehicle includes display panel, which is characterized in that the display panel is
Display panel described in any one of claim 1 to 5.
7. a kind of manufacturing method of display panel, which is characterized in that the manufacturing method includes:
Underlay substrate is provided, the underlay substrate is divided into multiple pixel units；
Form light emitting diode, wherein each pixel unit includes multiple light emitting diodes, multiple light emitting diode packets
Include red light emitting diodes, the luminescent layers of the red light emitting diodes is by that can be inspired the quanta point material system of feux rouges
At the luminescent layer of other light emitting diodes in the display panel in addition to red light emitting diodes is respectively by corresponding organic
Electroluminescent material is made.
8. manufacturing method according to claim 7, which is characterized in that multiple light emitting diodes in the pixel unit are also
Including blue LED and green LED, the luminescent layer of the blue LED is sent out by the first organic electroluminescence
Luminescent material is made, and the luminescent layer of the green LED is made of the second electroluminescent organic material.
9. manufacturing method according to claim 8, which is characterized in that formed light emitting diode the step of include:
Anode layer is formed, which includes multiple anodes, and each pixel unit corresponds to the anode of multiple insulation gaps；
Hole injecting material is formed, the hole injecting material includes and multiple light emitting diodes multiple skies correspondingly
Cave implanted layer, the hole injection layer in the same pixel unit are formed as one；
Hole transport material is formed, the hole transport material includes and multiple light emitting diodes multiple skies correspondingly
Cave transport layer, the hole transmission layer in the same pixel unit are formed as one；
Electron-blocking materials layer is formed, the electron-blocking materials layer includes and multiple light emitting diodes multiple electricity correspondingly
Sub- barrier layer, the electronic barrier layer in the same pixel unit are formed as one；
Be respectively formed multiple luminous material layers, each luminous material layer include apart from one another by multiple luminescent layers, multiple luminescent layers
It is corresponded respectively with multiple light emitting diodes, wherein the red light emitting diodes are formed using the method for inkjet printing
Luminescent layer；
Hole blocking material is formed, the hole blocking material includes and multiple light emitting diodes multiple skies correspondingly
Cave barrier layer；
Electron transport material is formed, the electron transport material includes and multiple light emitting diodes multiple electricity correspondingly
Sub- transport layer, the electron transfer layer in the same pixel unit are formed as one；
Electron injection material layer is formed, the electron injection material layer includes and multiple light emitting diodes multiple electricity correspondingly
Sub- implanted layer, the electron injecting layer in the same pixel unit are formed as one；
Cathode layer is formed, part corresponding with each light emitting diode is formed as the yin of the light emitting diode on the cathode layer
Pole.
10. the manufacturing method according to any one of claim 7 to 9, which is characterized in that the emitting red light two is made
The quanta point material of the luminescent layer of pole pipe includes multiple red quantum dots, each quantum dot include the core made of cadmium selenide with
And the shell made of zinc sulphide or cadmium sulfide, the shell coat the core.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379835A (en) * | 2019-07-17 | 2019-10-25 | 昆山国显光电有限公司 | A kind of preparation method of display panel, display device and display panel |
| CN110492013A (en) * | 2019-08-27 | 2019-11-22 | 深圳市思坦科技有限公司 | A kind of production method of quantum dot display screen |
| CN110943179A (en) * | 2019-12-13 | 2020-03-31 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, manufacturing method thereof and display device |
| CN112002250A (en) * | 2020-08-06 | 2020-11-27 | 武汉华星光电半导体显示技术有限公司 | Display device |
| CN112820833A (en) * | 2019-12-20 | 2021-05-18 | 吉林师范大学 | Organic white light device with dual-thermal activation delayed fluorescence as light emitting layer and preparation method thereof |
| WO2021152672A1 (en) * | 2020-01-27 | 2021-08-05 | シャープ株式会社 | Display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140042274A (en) * | 2012-09-28 | 2014-04-07 | 삼성전자주식회사 | Display pannel and apparatus for the same |
| CN104241553A (en) * | 2014-10-13 | 2014-12-24 | 深圳市华星光电技术有限公司 | OLED (organic light emitting diode) production method and OLED produced by same |
| CN107112350A (en) * | 2014-12-24 | 2017-08-29 | Lg电子株式会社 | Display device |
| US10274655B2 (en) * | 2014-09-30 | 2019-04-30 | Hon Hai Precision Industry Co., Ltd. | Color filter and display panel using same |
-
2018
- 2018-11-19 CN CN201811376590.2A patent/CN109473560A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140042274A (en) * | 2012-09-28 | 2014-04-07 | 삼성전자주식회사 | Display pannel and apparatus for the same |
| US10274655B2 (en) * | 2014-09-30 | 2019-04-30 | Hon Hai Precision Industry Co., Ltd. | Color filter and display panel using same |
| CN104241553A (en) * | 2014-10-13 | 2014-12-24 | 深圳市华星光电技术有限公司 | OLED (organic light emitting diode) production method and OLED produced by same |
| CN107112350A (en) * | 2014-12-24 | 2017-08-29 | Lg电子株式会社 | Display device |
Non-Patent Citations (1)
| Title |
|---|
| 马航 等: "《氧化锌作为电子传输层的量子点发光二极管》", 《发光学报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379835A (en) * | 2019-07-17 | 2019-10-25 | 昆山国显光电有限公司 | A kind of preparation method of display panel, display device and display panel |
| CN110379835B (en) * | 2019-07-17 | 2022-03-04 | 昆山国显光电有限公司 | Display panel, display device and preparation method of display panel |
| CN110492013A (en) * | 2019-08-27 | 2019-11-22 | 深圳市思坦科技有限公司 | A kind of production method of quantum dot display screen |
| CN110492013B (en) * | 2019-08-27 | 2022-03-15 | 深圳市思坦科技有限公司 | Manufacturing method of quantum dot display screen |
| CN110943179A (en) * | 2019-12-13 | 2020-03-31 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, manufacturing method thereof and display device |
| CN112820833A (en) * | 2019-12-20 | 2021-05-18 | 吉林师范大学 | Organic white light device with dual-thermal activation delayed fluorescence as light emitting layer and preparation method thereof |
| CN112820833B (en) * | 2019-12-20 | 2023-05-30 | 吉林师范大学 | Organic white light device with dual-thermal-activation delayed fluorescence as light-emitting layer and preparation method thereof |
| WO2021152672A1 (en) * | 2020-01-27 | 2021-08-05 | シャープ株式会社 | Display device |
| JP7329080B2 (en) | 2020-01-27 | 2023-08-17 | シャープ株式会社 | Display device |
| CN112002250A (en) * | 2020-08-06 | 2020-11-27 | 武汉华星光电半导体显示技术有限公司 | Display device |
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Application publication date: 20190315 |