CN108254120A - Capacitance pressure transducer, with self-shield - Google Patents
Capacitance pressure transducer, with self-shield Download PDFInfo
- Publication number
- CN108254120A CN108254120A CN201711113253.XA CN201711113253A CN108254120A CN 108254120 A CN108254120 A CN 108254120A CN 201711113253 A CN201711113253 A CN 201711113253A CN 108254120 A CN108254120 A CN 108254120A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- hole
- pressure
- central electrode
- aluminium layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0618—Overload protection
Abstract
The invention discloses a kind of capacitance pressure transducer,s with self-shield, it includes top electrodes silicon chip etc., central electrode silicon chip is located between top electrodes silicon chip and lower electrode silicon chip, pressure transmission hole is located at the centre of central electrode silicon chip, two layers of silicon dioxide insulating layer is located at the both sides up and down of central electrode silicon chip respectively, mass block is located at the centre of central electrode silicon chip, silicon fiml is connected to the outside of mass block, pressure through-hole is located at the centre of lower electrode silicon chip, first aluminium layer is located at the top of top electrodes silicon chip, second aluminium layer is located at the top of central electrode silicon chip, third aluminium layer is located at the top of lower electrode silicon chip.The present invention is protected by load pressure, prevents from damaging.
Description
Technical field
The present invention relates to a kind of sensor, more particularly to a kind of capacitance pressure transducer, with self-shield.
Invention content
The technical problems to be solved by the invention are to provide a kind of capacitance pressure transducer, with self-shield, by height
The protection of load pressure prevents from damaging.
The present invention is to solve above-mentioned technical problem by following technical proposals：A kind of capacitive pressure with self-shield
Sensor, which is characterized in that it include top electrodes silicon chip, central electrode silicon chip, lower electrode silicon chip, silicon dioxide insulating layer,
Mass block, pressure transmission hole, pressure through-hole, silicon fiml, the first aluminium layer, the second aluminium layer, third aluminium layer, central electrode silicon chip are located at top
Between portion's electrode silicon chip and lower electrode silicon chip, pressure transmission hole is located at the centre of central electrode silicon chip, two layers of silicon dioxide insulator
Layer is located at the both sides up and down of central electrode silicon chip respectively, and mass block is located at the centre of central electrode silicon chip, and silicon fiml is connected to quality
The outside of block, pressure through-hole are located at the centre of lower electrode silicon chip, and the first aluminium layer is located at the top of top electrodes silicon chip, the second aluminium layer
Positioned at the top of central electrode silicon chip, third aluminium layer is located at the top of lower electrode silicon chip.
Preferably, the shape in the pressure transmission hole is identical with the shape of pressure through-hole, be straight hole or reverse taper hole or
Two-way reverse taper hole or the assembly of straight hole and reverse taper hole.
The positive effect of the present invention is：Capacitance pressure transducer, of the present invention with self-shield is by high load pressure
The protection of power prevents from damaging, reduces cost.
Description of the drawings
Fig. 1 is the structure diagram of the capacitance pressure transducer, of the invention with self-shield.
Fig. 2 is the structure diagram of the reverse taper hole of the present invention.
Fig. 3 is the structure diagram of the two-way reverse taper hole of the present invention.
Specific embodiment
Present pre-ferred embodiments are provided below in conjunction with the accompanying drawings, with the technical solution that the present invention will be described in detail.
As shown in Figure 1, the capacitance pressure transducer, of the invention with self-shield includes top electrodes silicon chip 1, central electrode
Silicon chip 2, lower electrode silicon chip 3, silicon dioxide insulating layer 4, mass block 5, pressure transmission hole 6, pressure through-hole 7, silicon fiml 8, the first aluminium
The 91, second aluminium layer 92 of layer, third aluminium layer 93, central electrode silicon chip 2 are located between top electrodes silicon chip 1 and lower electrode silicon chip 3, press
Power transfer hole 6 is located at the centre of central electrode silicon chip 2, and two layers of silicon dioxide insulating layer 4 is respectively positioned at the upper of central electrode silicon chip 2
Lower both sides, mass block 5 are located at the centre of central electrode silicon chip 2, and silicon fiml 8 is connected to the outside of mass block 5, and pressure through-hole 7 is located at
The centre of lower electrode silicon chip 3, the first aluminium layer 91 are located at the top of top electrodes silicon chip 1, and the second aluminium layer 92 is located at central electrode silicon
The top of piece 2, third aluminium layer 93 are located at the top of lower electrode silicon chip 3.
The shape in pressure transmission hole 6 is identical with the shape of pressure through-hole, be straight hole (Fig. 1) or reverse taper hole (Fig. 2) or
Two-way reverse taper hole (Fig. 3) or the assembly of straight hole and reverse taper hole are so that it is convenient to use.
The making of central electrode silicon chip is the movable electrode formed in silicon chip by anisotropic etching, among silicon fiml
Both sides, which are formed, has full symmetric island structure, and the thickness and width of the diaphragm at island structure edge is the pressure according to sensor
Determined by power range ability.A pressure guide hole for penetrating silicon chip is formed by etching on top electrodes silicon chip and lower electrode silicon chip
(pressure transmission hole and pressure through-hole), the two Kong San wafer bondings together when by the center on centring island, according to
The size and shape of the demand pressure guide hole for the occasion that range ability and sensor use is different, and the shape of pressure guide hole has：Straight hole,
Reverse taper hole, the assembly in straight hole and reverse taper hole and two-way bellmouth, the hole face of the pole plate of upper and lower ends is to center pad
The center of upper island structure, bellmouth can reduce rate of pressure change to center playing one when sensor receives compression shock
Diaphragm is protected.Between silicon electrode between the silicon pole plate of calmodulin binding domain CaM formed one have certain thickness silicon dioxide layer with
Make electrode insulation, and top pole plate and lower end pole plate are bonded in from both sides on median plate, form the capacitance of two overlappings up and down
Device.When pressure at both sides difference changes, center diaphragm produces displacement, changes capacitance, therefore the capacitance of two capacitors
Changed according to the difference of both sides different pressures.Two capacitances are equal when pressure differential is 0.The electric contact of capacitance is connected directly between
On silicon chip.
The stainless steel base seat of sensor carries a small centre bore, and at both ends there are one depressed cavity, and sensor chip leads to
Cross the glue being coated in around base central hole, in the cavity of hole device to hole bonding at one end or hole device to hole is bonded on glass with holes
Or on ceramic wafer, then being pasted onto glass or ceramic film perforation device to hole on metal base, glue plays bonding effect herein
Play the sealing of device to hole and cavity；It is burn-on on the cavity at the both ends of pedestal with ripply diaphragm formation two after having drawn line
Chamber, in pedestal two chambers marginal belt, there are two oil-filled holes, and silicone oil is filled up completely two chambers in the state of vacuum
In, full of oil-filled hole metal pin is passed through welded seal after oil.
Pressure on diaphragm is transmitted to the central electrode silicon chip of pedestal by oil.By two electricity for measuring pressure sensor
Hold the numerical value that variation reads differential pressure；When pressure differential is much larger than pressure is measured, central electrode silicon chip island is electric to the small side of pressure
Ghandler motion moves and contacts the electrode to shorten, and oil guiding hole is closed.Pressure continues to increase but not pass to center diaphragm, sensor by
The protection of load pressure prevents from damaging.
Particular embodiments described above, the technical issues of to the solution of the present invention, technical solution and advantageous effect carry out
It is further described, it should be understood that the above is only a specific embodiment of the present invention, is not limited to
The present invention, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in this
Within the protection domain of invention.
Claims (2)
1. a kind of capacitance pressure transducer, with self-shield, which is characterized in that it includes top electrodes silicon chip, central electrode silicon
Piece, lower electrode silicon chip, silicon dioxide insulating layer, mass block, pressure transmission hole, pressure through-hole, silicon fiml, the first aluminium layer, the second aluminium
Layer, third aluminium layer, central electrode silicon chip are located between top electrodes silicon chip and lower electrode silicon chip, and pressure transmission hole is located at middle electrocardio
The centre of pole silicon chip, two layers of silicon dioxide insulating layer are located at the both sides up and down of central electrode silicon chip respectively, and mass block is located at center
The centre of electrode silicon chip, silicon fiml are connected to the outside of mass block, and pressure through-hole is located at the centre of lower electrode silicon chip, the first aluminium layer position
In the top of top electrodes silicon chip, the second aluminium layer is located at the top of central electrode silicon chip, and third aluminium layer is located at lower electrode silicon chip
Top.
2. the capacitance pressure transducer, with self-shield as described in claim 1, which is characterized in that the pressure transmission hole
Shape is identical with the shape of pressure through-hole, is straight hole or reverse taper hole or two-way reverse taper hole or straight hole and reverse taper hole
Assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711113253.XA CN108254120A (en) | 2017-11-13 | 2017-11-13 | Capacitance pressure transducer, with self-shield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711113253.XA CN108254120A (en) | 2017-11-13 | 2017-11-13 | Capacitance pressure transducer, with self-shield |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108254120A true CN108254120A (en) | 2018-07-06 |
Family
ID=62722217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711113253.XA Pending CN108254120A (en) | 2017-11-13 | 2017-11-13 | Capacitance pressure transducer, with self-shield |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108254120A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632181A (en) * | 2018-12-20 | 2019-04-16 | 兰州空间技术物理研究所 | A kind of MEMS capacitor thin film vacuum gauge |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2210389Y (en) * | 1994-08-26 | 1995-10-18 | 机械工业部沈阳仪器仪表工艺研究所 | Single side differential structure linearized silicon capacitor pressure transducer |
| CN2390194Y (en) * | 1999-06-22 | 2000-08-02 | 大连理工大学 | Bootstrap differential capacitance sensor |
| CN2667667Y (en) * | 2003-08-22 | 2004-12-29 | 沈阳仪表科学研究院 | Silicon capacitive pressure sensor |
| CN102967394A (en) * | 2012-09-15 | 2013-03-13 | 华东光电集成器件研究所 | Symmetrical capacitor pressure sensor and manufacture method thereof |
| CN104062044A (en) * | 2013-03-20 | 2014-09-24 | 北京大学 | Micro mechanical differential capacitive pressure gauge |
| CN105084296A (en) * | 2014-04-25 | 2015-11-25 | 无锡华润上华半导体有限公司 | Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer |
-
2017
- 2017-11-13 CN CN201711113253.XA patent/CN108254120A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2210389Y (en) * | 1994-08-26 | 1995-10-18 | 机械工业部沈阳仪器仪表工艺研究所 | Single side differential structure linearized silicon capacitor pressure transducer |
| CN2390194Y (en) * | 1999-06-22 | 2000-08-02 | 大连理工大学 | Bootstrap differential capacitance sensor |
| CN2667667Y (en) * | 2003-08-22 | 2004-12-29 | 沈阳仪表科学研究院 | Silicon capacitive pressure sensor |
| CN102967394A (en) * | 2012-09-15 | 2013-03-13 | 华东光电集成器件研究所 | Symmetrical capacitor pressure sensor and manufacture method thereof |
| CN104062044A (en) * | 2013-03-20 | 2014-09-24 | 北京大学 | Micro mechanical differential capacitive pressure gauge |
| CN105084296A (en) * | 2014-04-25 | 2015-11-25 | 无锡华润上华半导体有限公司 | Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109632181A (en) * | 2018-12-20 | 2019-04-16 | 兰州空间技术物理研究所 | A kind of MEMS capacitor thin film vacuum gauge |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180706 |
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| RJ01 | Rejection of invention patent application after publication |