CN105084296A - Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer - Google Patents
Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer Download PDFInfo
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- CN105084296A CN105084296A CN201410173159.3A CN201410173159A CN105084296A CN 105084296 A CN105084296 A CN 105084296A CN 201410173159 A CN201410173159 A CN 201410173159A CN 105084296 A CN105084296 A CN 105084296A
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Abstract
A manufacturing method for an MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer comprises that a recess is formed on a substrate surface in advance as a capacitor gap, and a deep trench isolation and bonding technology is employed for preparing two electrodes of a capacitor. A technology of removing a sacrificial layer is not needed by using the method, the adhesion problem of a movable electrode and a substrate is avoided, and the technology stability and the product yield are substantially improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly a kind of preparation method of MEMS capacitive pressure sensor.
Background technology
MEMS (MicroElectroMechanicalSystems, microelectromechanical systems) be utilize ic manufacturing technology and micro-processing technology micro-structural, microsensor, microactrator, control treatment circuit even interface, to communicate and power supply etc. is manufactured on miniature integrated system on one or more chip.
Pressure sensor is transducer pressure signal being converted to electrical signal, is the important component part in business-like sensor.Compared with conventional pressure sensor, the pressure sensor adopting MEMS technology to prepare has fairly obvious advantage in volume, power consumption, weight and price etc.At present, the pressure sensor utilizing MEMS technology to make has been widely used in the various fields such as auto industry, biomedicine, Industry Control, the energy and semi-conductor industry.According to the difference of operation principle, pressure sensor is mainly divided into pressure resistance type, condenser type and piezoelectric type etc.Piezoresistive pressure sensor is made up of the stress sensitive pressure drag carried on silicon fiml and silicon fiml, changes pressure drag resistance, can be obtained the change of pressure by bridge measurement change in resistance when silicon fiml is out of shape under pressure.At present, piezoresistive pressure sensor due to its manufacturing process and semiconductor technology compatibility high, manufacturing process is simple, and the advantages such as interface circuit is simple are the mainstream technologys of current pressure sensor.But piezoresistive pressure sensor but has the shortcomings such as temperature characterisitic is poor, and sensitivity is low, and power consumption is large, and be not suitable for some low-power consumption and the high application of precision.
Along with the maturation of MEMS processing technology, add the plurality of advantages such as the size of capacitance pressure transducer, own is little, and cost is low, and good temp characteristic, precision are high, low in energy consumption, capacitance pressure transducer, technology is more and more paid close attention to.Traditional capacitance pressure transducer, is usually based on surface micro-fabrication technology, polysilicon is adopted to make movable electrode, it is integrated that the method easily realizes with cmos circuit, but the sticking problem of the membrane stress brought, movable electrode and substrate is difficult to solve.
Summary of the invention
Based on this, be necessary the preparation method providing a kind of MEMS capacitive pressure sensor, the method does not need to remove sacrifice layer process, avoids the adhesion of movable electrode and substrate, substantially increases the stability of technique and the yield rate of product.
A preparation method for MEMS capacitive pressure sensor, comprises step:
Substrate and substrate are provided.
Form recess over the substrate.
Form groove on the substrate, described groove is on the substrate in the shape closing lines, and the region that described closed lines surround is less than described recess area.
Form insulating barrier at described groove inner wall, then fill polysilicon and form polysilicon layer.
Described substrate is formed the one side of groove and a bonding of described substrate formation recess, the region that described closed lines are surrounded is dropped in described recess area.
Reduction processing is carried out to described substrate, is at least thinned to the bottom of described groove, make described groove that described substrate separation is become internal sheet and outer plate.
Thinning of described substrate forms passivation layer.
Described passivation layer forms top electrode contact hole to connect described internal sheet, described passivation layer forms bottom electrode contact hole to connect described outer plate.
Make the upper electrode metal lead-in wire connecting internal sheet at described top electrode contact hole, make the bottom electrode metal lead wire connecting outer plate at described bottom electrode contact hole.
Wherein in an embodiment, the material of described substrate and substrate is monocrystalline silicon.
Wherein in an embodiment, described groove is wide 5 μm ~ and 30 μm, dark 5 μm ~ 100 μm.
Wherein in an embodiment, described insulating barrier is silicon dioxide layer.
Wherein in an embodiment, form insulating barrier at described groove inner wall by depositing technics.
Wherein in an embodiment, described insulating layer thickness 100nm ~ 2000nm.
Wherein in an embodiment, reduction processing is carried out to described substrate, is at least thinned to the polysilicon layer of described groove.
Wherein in an embodiment, described passivation layer is silicon dioxide layer, and thickness is 1000nm ~ 3000nm.
Wherein in an embodiment, deposit layer of metal layer on described passivation layer, and the metal level described top electrode contact hole and deposit around formed by etching technics is as upper electrode metal lead-in wire, the metal level that described bottom electrode contact hole and deposit around formed as bottom electrode metal lead wire.
Wherein in an embodiment, described metal level is aluminium lamination, the thick 1000nm ~ 4000nm of described aluminium lamination.
The preparation method of above-mentioned MEMS capacitive pressure sensor, the method adopts and is used as capacitance gap at substrate surface formation recess in advance, two electrodes (top electrode and bottom electrode) of electric capacity are made by deep trench isolation and bonding techniques, the method does not need to remove sacrifice layer process, avoid movable electrode (top electrode) and the adhesion problems of substrate, substantially increase the stability of technique and the yield rate of product.
Secondly, the method adopts monocrystalline silicon as two electrodes of electric capacity, avoids the residual stress of film.Again, the method adopts deep groove isolation structure to form two electrodes of electric capacity, reduces the parasitic capacitance of device, substantially increases the sensitivity of device.
Accompanying drawing explanation
Fig. 1 is the flow chart of the present invention's wherein embodiment;
Fig. 2 is the substrate top view of the present invention's wherein embodiment;
Fig. 3 is the side of substrate sectional view along A-A ' line in Fig. 2;
Fig. 4 is the substrate top view of the present invention's wherein embodiment;
Fig. 5 is the substrate side sectional view along B-B ' line in Fig. 4;
Fig. 6 is the substrate side sectional view after forming insulating barrier and polysilicon layer in groove;
Fig. 7 is substrate and substrate bonding trailing flank sectional view;
Fig. 8 is side sectional view substrate being carried out to reduction processing back substrate and substrate;
Fig. 9 is the side sectional view forming passivation layer and upper/lower electrode contact hole back substrate and substrate;
Figure 10 is the side sectional view forming metal level back substrate and substrate;
Figure 11 is the side sectional view forming upper/lower electrode metal lead wire back substrate and substrate.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Fig. 1 is the flow chart of one embodiment of the invention, incorporated by reference to Fig. 2 to Figure 11.
A preparation method for MEMS capacitive pressure sensor, comprises step:
Step S100: substrate 100 and substrate 200 are provided.The material of substrate 100 and substrate 200 is semi-conducting material, is low-resistance single crystal silicon in this example, and resistivity is 0.01 Ω .cm ~ 0.05 Ω .cm.Substrate 100 and substrate 200 form two electrodes of electric capacity the most respectively, adopt monocrystalline silicon as two electrodes of electric capacity, avoid the residual stress of film.
Step S110: see Fig. 2 and Fig. 3, forms recess 120 on the substrate 100.Recess 120 is rectangular, and the length of side on every limit is between 500 μm ~ 1000 μm.The degree of depth of recess 120, between 10 μm ~ 100 μm, equals the gap of bottom crown on electric capacity.The method forming recess 120 can be etching process, such as wet etching or dry etching.
Step S120: see Fig. 4 and Fig. 5, substrate 200 is formed groove 220, and groove 220 is in the shape closing lines 240 on substrate 200, and the region that closed lines 240 surround is less than recess area 140 (thick line see in Fig. 2 and Fig. 4).The wide W of groove 220 is between 5 μm ~ 30 μm, and dark H is between 5 μm ~ 100 μm.
Step S130: see Fig. 6, forms insulating barrier 260 by depositing technics at groove 220 inwall, then forms polysilicon by the insulating barrier 260 of epitaxial growth technology in groove 220, filled up by groove 220, forms polysilicon layer 280.Insulating barrier is silicon dioxide layer, thick 100nm ~ 2000nm.The isolation structure of groove 220 is made by epi polysilicon, can make high-aspect-ratio isolation structure, and groove 220 is wider, and its electric isolating effect is better, more can reduce the parasitic capacitance of device, greatly can improve the sensitivity of device like this.
Step S140: see Fig. 7, substrate 200 is formed the bonding that the one side of groove 220 and substrate 100 form recess 120, the region that closed lines 240 are surrounded is dropped in recess area 140.Bonding can adopt static bonding process.
Step S150: see Fig. 8, carries out reduction processing to substrate 200, is thinned to the polysilicon layer 280 in groove 220, makes groove 220 substrate separation be become internal sheet 200A and outer plate 200B, internal sheet 200A namely to become the movable electrode of electric capacity.The mode of reduction processing comprises wet etching, dry etching and mechanical reduction.
Step S160: see Fig. 9, forms passivation layer 300 by depositing technics on thinning of substrate 200.Passivation layer 300 is silicon dioxide layer, and thickness is 1000nm ~ 3000nm.
Step S170: see Fig. 9, on passivation layer 300, top electrode contact hole 320 is formed by etching technics, top electrode contact hole 320 runs through passivation layer 300, the external world is made to connect internal sheet 200A, on passivation layer 300, bottom electrode contact hole 340 is formed by etching technics, bottom electrode contact hole 340 runs through passivation layer 300, makes the external world can connect outer plate 200B.
Step S180: see Figure 10 and Figure 11, deposit layer of metal layer 400 on passivation layer 300, and upper electrode metal layer top electrode contact hole 320 and deposit around formed by etching technics is as upper electrode metal lead-in wire 420, the bottom electrode metal level that bottom electrode contact hole 340 and deposit around formed as bottom electrode metal lead wire 440.It is insulation between upper electrode metal lead-in wire 420 and bottom electrode metal lead wire 440.Metal level is aluminium lamination, the thick 1000nm ~ 4000nm of described aluminium lamination.
Outer plate 200B and substrate 100 are bonded together, the region (outer plate 200B) that substrate 100 surrounds with closed lines 240 is as the fixed electrode of electric capacity, when pressure acts on movable electrode (i.e. internal sheet 200A), movable electrode generation deformation, two electrode spacings are changed, produces corresponding capacitance variation.Because capacitance is along with change in pressure, capacitance and force value are mutually corresponding, and mineralization pressure is changed to the signal of electric capacity thus.
The present embodiment provides a kind of preparation method of MEMS capacitive pressure sensor, and the method adopts and is used as capacitance gap at substrate 100 surface formation recess 120 in advance, is made two electrodes of electric capacity by groove 220 isolation and bonding.The method does not need to remove sacrifice layer process, avoids the adhesion of movable electrode and substrate, substantially increases the stability of technique and the yield rate of product.Secondly, the method adopts monocrystalline silicon as two electrodes of electric capacity, avoids the residual stress of film.Again, the method adopts deep groove isolation structure to form two electrodes of electric capacity, reduces the parasitic capacitance of device, substantially increases the sensitivity of device.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a preparation method for MEMS capacitive pressure sensor, is characterized in that, comprises step:
Substrate and substrate are provided;
Form recess over the substrate;
Form groove on the substrate, described groove is on the substrate in the shape closing lines, and the region that described closed lines surround is less than described recess area;
Form insulating barrier at described groove inner wall, then fill polysilicon and form polysilicon layer;
Described substrate is formed the one side of groove and a bonding of described substrate formation recess, the region that described closed lines are surrounded is dropped in described recess area;
Reduction processing is carried out to described substrate, is at least thinned to the bottom of described groove, make described groove that described substrate separation is become internal sheet and outer plate;
Thinning of described substrate forms passivation layer;
Described passivation layer forms top electrode contact hole to connect described internal sheet, described passivation layer forms bottom electrode contact hole to connect described outer plate;
Make the upper electrode metal lead-in wire connecting internal sheet at described top electrode contact hole, make the bottom electrode metal lead wire connecting outer plate at described bottom electrode contact hole.
2. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that: the material of described substrate and substrate is monocrystalline silicon.
3. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that, described groove is wide 5 μm ~ and 30 μm, dark 5 μm ~ 100 μm.
4. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that, described insulating barrier is silicon dioxide layer.
5. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that, forms insulating barrier at described groove inner wall by depositing technics.
6. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that, described insulating layer thickness 100nm ~ 2000nm.
7. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that, carries out reduction processing to described substrate, is at least thinned to the polysilicon layer of described groove.
8. the preparation method of MEMS capacitive pressure sensor according to claim 1, is characterized in that, described passivation layer is silicon dioxide layer, and thickness is 1000nm ~ 3000nm.
9. the preparation method of MEMS capacitive pressure sensor according to claim 1, it is characterized in that, deposit layer of metal layer on described passivation layer, and the metal level described top electrode contact hole and deposit around formed by etching technics is as upper electrode metal lead-in wire, the metal level that described bottom electrode contact hole and deposit around formed as bottom electrode metal lead wire.
10. the preparation method of MEMS capacitive pressure sensor according to claim 9, is characterized in that, described metal level is aluminium lamination, the thick 1000nm ~ 4000nm of described aluminium lamination.
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Cited By (4)
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| CN107246895A (en) * | 2017-06-13 | 2017-10-13 | 黄晓敏 | A kind of Multifunction Sensor for plant greenhouse |
| CN108195885A (en) * | 2017-12-25 | 2018-06-22 | 佛山市车品匠汽车用品有限公司 | A kind of silicon substrate integrated gas sensors |
| CN108254120A (en) * | 2017-11-13 | 2018-07-06 | 胡波 | Capacitance pressure transducer, with self-shield |
| CN114608728A (en) * | 2022-03-10 | 2022-06-10 | 苏州敏芯微电子技术股份有限公司 | Capacitive pressure sensor and preparation method thereof |
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| JP2004191137A (en) * | 2002-12-10 | 2004-07-08 | Fujikura Ltd | Electrostatic capacitance pressure sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107246895A (en) * | 2017-06-13 | 2017-10-13 | 黄晓敏 | A kind of Multifunction Sensor for plant greenhouse |
| CN108254120A (en) * | 2017-11-13 | 2018-07-06 | 胡波 | Capacitance pressure transducer, with self-shield |
| CN108195885A (en) * | 2017-12-25 | 2018-06-22 | 佛山市车品匠汽车用品有限公司 | A kind of silicon substrate integrated gas sensors |
| CN114608728A (en) * | 2022-03-10 | 2022-06-10 | 苏州敏芯微电子技术股份有限公司 | Capacitive pressure sensor and preparation method thereof |
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Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |
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