CN108241251B - 相移掩模坯料、相移掩模制造方法及显示装置制造方法 - Google Patents

相移掩模坯料、相移掩模制造方法及显示装置制造方法 Download PDF

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Publication number
CN108241251B
CN108241251B CN201711295074.2A CN201711295074A CN108241251B CN 108241251 B CN108241251 B CN 108241251B CN 201711295074 A CN201711295074 A CN 201711295074A CN 108241251 B CN108241251 B CN 108241251B
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China
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phase shift
film
layer
chromium
functional layer
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Chinese (zh)
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CN108241251A (zh
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坪井诚治
浅川敬司
中村伊都
安森顺一
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
CN201711295074.2A 2016-12-27 2017-12-08 相移掩模坯料、相移掩模制造方法及显示装置制造方法 Active CN108241251B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-252703 2016-12-27
JP2016252703A JP6812236B2 (ja) 2016-12-27 2016-12-27 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

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CN108241251A CN108241251A (zh) 2018-07-03
CN108241251B true CN108241251B (zh) 2023-02-28

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JP (1) JP6812236B2 (https=)
KR (1) KR102271751B1 (https=)
CN (1) CN108241251B (https=)
TW (1) TWI698702B (https=)

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Publication number Priority date Publication date Assignee Title
JP7115281B2 (ja) 2018-12-12 2022-08-09 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7044095B2 (ja) * 2019-05-31 2022-03-30 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
KR102598440B1 (ko) * 2019-12-20 2023-11-07 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
CN112259557B (zh) * 2020-10-15 2022-12-06 Tcl华星光电技术有限公司 显示面板及其制备方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
KR102475672B1 (ko) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (5)

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JPH06342205A (ja) * 1993-04-09 1994-12-13 Dainippon Printing Co Ltd 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
US5538816A (en) * 1993-04-09 1996-07-23 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask, halftone phase shift photomask blank, and methods of producing the same
JP2000181049A (ja) * 1998-12-18 2000-06-30 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
CN104698738A (zh) * 2013-12-06 2015-06-10 信越化学工业株式会社 光掩模坯料
TW201640216A (zh) * 2015-03-27 2016-11-16 Ｈｏｙａ股份有限公司 遮罩基底、相移遮罩及相移遮罩之製造方法、與半導體裝置之製造方法

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US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
US7556892B2 (en) * 2004-03-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
KR101621985B1 (ko) * 2008-03-31 2016-05-17 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법
JP2010008532A (ja) * 2008-06-25 2010-01-14 Toppan Printing Co Ltd ハーフトーンフォトマスク及びそれを用いて製造したカラーフィルタ基板
KR20110059510A (ko) * 2009-11-27 2011-06-02 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조 방법
JP5270647B2 (ja) * 2010-12-06 2013-08-21 信越化学工業株式会社 スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
TWI609233B (zh) * 2013-04-17 2017-12-21 阿爾貝克成膜股份有限公司 相位移光罩之製造方法及相位移光罩
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6722421B2 (ja) * 2014-04-04 2020-07-15 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JP6661262B2 (ja) * 2014-05-29 2020-03-11 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP6594742B2 (ja) * 2014-11-20 2019-10-23 Ｈｏｙａ株式会社 フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06342205A (ja) * 1993-04-09 1994-12-13 Dainippon Printing Co Ltd 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
US5538816A (en) * 1993-04-09 1996-07-23 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask, halftone phase shift photomask blank, and methods of producing the same
JP2000181049A (ja) * 1998-12-18 2000-06-30 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
CN104698738A (zh) * 2013-12-06 2015-06-10 信越化学工业株式会社 光掩模坯料
TW201640216A (zh) * 2015-03-27 2016-11-16 Ｈｏｙａ股份有限公司 遮罩基底、相移遮罩及相移遮罩之製造方法、與半導體裝置之製造方法

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Publication number Publication date
TWI698702B (zh) 2020-07-11
JP2018106023A (ja) 2018-07-05
JP6812236B2 (ja) 2021-01-13
TW201826010A (zh) 2018-07-16
CN108241251A (zh) 2018-07-03
KR102271751B1 (ko) 2021-06-30
KR20180076296A (ko) 2018-07-05

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