CN108231520B - Substrate dry etching device - Google Patents
Substrate dry etching device Download PDFInfo
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- CN108231520B CN108231520B CN201711490172.1A CN201711490172A CN108231520B CN 108231520 B CN108231520 B CN 108231520B CN 201711490172 A CN201711490172 A CN 201711490172A CN 108231520 B CN108231520 B CN 108231520B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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Abstract
The invention relates to a substrate dry etching device, which comprises an upper electrode plate, a lower electrode plate and at least two groups of supporting convex pieces, wherein the upper electrode plate is arranged on the upper electrode plate; the upper electrode plate and the lower electrode plate are arranged oppositely and at intervals; the lower electrode plate is provided with a plurality of movable holes and a plurality of air holes; each group of supporting convex pieces comprises a plurality of supporting convex pieces, and each supporting convex piece is movably inserted into one movable hole; the maximum heights of the supporting convex pieces protruding from the surface of the lower electrode plate are the same; each group of the supporting protruding parts is used for alternately protruding to the maximum height in the etching process, and only one group of the supporting protruding parts protrudes to the maximum height at any time. At different moments, the big board supports protruding piece butt with the difference in different positions, can effectively avoid supporting the long-time butt of protruding piece in the sculpture in the big board the same position, effectively avoids the big board to produce bad spot, in addition, can also avoid piling up of reaction product, has reduced the probability of producing of bad spot for the yield of big board obtains improving.
Description
Technical Field
The invention relates to the technical field of organic light-emitting display manufacturing, in particular to a substrate dry etching device.
Background
Dry Etching (Dry Etching) is a technique of performing thin film Etching using plasma, and is widely used in semiconductor processes, thin film transistor liquid crystal displays, and OLED (Organic Light-Emitting Diode) display manufacturing processes. In the fabrication process of an organic light emitting diode (LTPS) array substrate, a film on the surface of the substrate is removed by dry etching to form a desired circuit pattern. In the dry etching process, the high-frequency voltage partially ionizes the reaction gas into plasma, an electric field is formed between the upper electrode and the lower electrode which are matched with each other, and the plasma etches the thin film on the substrate placed on the lower electrode under the action of the electric field.
In the dry etching process of actual production, the substrate placed on the lower electrode needs to be cooled by injecting helium gas due to high temperature, so that the substrate can be timely cooled to obtain a better etching effect. In the prior art, the lower electrode is used for supporting the substrate, the lower electrode is provided with a plurality of supporting protrusions and a plurality of air holes, the supporting protrusions are used for abutting against the substrate and supporting the substrate, and the air holes are used for injecting nitrogen. The substrate is supported by the support protrusions, and the helium gas blows the lower surface of the substrate placed on the lower electrode through the gas holes, thereby cooling the substrate.
However, the cooling effect is different at the position where the support protrusion is in contact with the substrate than at other positions on the substrate where the support protrusion is not in contact with the support protrusion, and therefore, a defect (Mura) is likely to occur in the position where the support protrusion is in contact with the lower surface of the substrate, and the substrate is defective. In addition, because the top end area of the supporting protrusion is larger, reaction products are easy to accumulate between the supporting protrusion and the contact area of the lower surface of the substrate in the etching process, so that the adsorption capacity of the supporting protrusion on the substrate is reduced, the area of bad spots of the contact area is further increased, the occurrence probability of the bad spots is increased, and the process quality of products is further influenced.
Disclosure of Invention
Based on this, it is necessary to provide a substrate dry etching apparatus.
A substrate dry etching apparatus comprising: the upper electrode plate, the lower electrode plate and at least two groups of supporting protrusions;
the upper electrode plate and the lower electrode plate are opposite and arranged at intervals; the lower electrode plate is provided with a plurality of movable holes and a plurality of air holes, each air hole penetrates through two opposite surfaces of the lower electrode plate, and each movable hole is formed in one surface, facing the upper electrode plate, of the lower electrode plate;
each group of the supporting convex pieces comprises a plurality of supporting convex pieces, and each supporting convex piece is movably inserted into one movable hole; the maximum heights of the supporting convex pieces protruding from the surface of the lower electrode plate are the same;
each group of the supporting convex parts is used for alternately protruding to the maximum height in the etching process, and only one group of the supporting convex parts protrudes to the maximum height at any time.
In one embodiment, the number of the sets of the support protrusions is three.
In one embodiment, the three sets of supporting protrusions include a set of first protrusions, a set of second protrusions, and a set of third protrusions, each of the first protrusions is disposed adjacent to one of the second protrusions and one of the third protrusions, and the adjacent first protrusions, one of the second protrusions, and one of the third protrusions form a set of supporting members.
In one embodiment, each set of the support assemblies is symmetrically disposed about a geometric center of the lower electrode plate.
In one embodiment, the first protruding member, the second protruding member and the third protruding member of each set of the supporting members are arranged along a straight line.
In one embodiment, the first protruding members, the second protruding members and the third protruding members in each set of the supporting components are arranged in a triangular matrix.
In one embodiment, the support protrusions of each set have equal widths.
In one embodiment, each set of the support protrusions has the same cross-sectional shape.
In one embodiment, the minimum height of the supporting protrusions protruding from the surface of the lower electrode plate is equal.
In one embodiment, the support protrusions of each set are equal in length.
Above-mentioned base plate dry etching device, support the main board through adjusting each group support protruding piece arch to maximum height, and each group supports protruding piece arch to maximum height in turn, make at different moments, the main board is at different positions and the protruding piece butt of support of difference, can effectively avoid supporting the long-time butt of protruding piece in the sculpture and in the same position on the main board, effectively avoid the main board to produce bad spot, furthermore, can also avoid piling up of reaction product, the probability of producing of bad spot has been reduced, make the yield of main board obtain improving.
Drawings
FIG. 1 is a schematic partial cross-sectional view of a substrate dry etching apparatus according to an embodiment;
FIG. 2 is a schematic view of a structure of a lower electrode plate according to an embodiment;
FIG. 3 is a schematic view of a partial cross-sectional structure of a lower electrode plate according to another embodiment;
fig. 4 is a schematic partial cross-sectional structure diagram of a substrate dry etching apparatus according to another embodiment.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
For example, a substrate dry etching device comprises an upper electrode plate, a lower electrode plate and at least two groups of supporting protrusions; the upper electrode plate and the lower electrode plate are opposite and arranged at intervals; the lower electrode plate is provided with a plurality of movable holes and a plurality of air holes, each air hole penetrates through two opposite surfaces of the lower electrode plate, and each movable hole is formed in one surface, facing the upper electrode plate, of the lower electrode plate; each group of the supporting convex pieces comprises a plurality of supporting convex pieces, and each supporting convex piece is movably inserted into one movable hole; the maximum heights of the supporting convex pieces protruding from the surface of the lower electrode plate are the same; each group of the supporting convex parts is used for alternately protruding to the maximum height in the etching process, and only one group of the supporting convex parts protrudes to the maximum height at any time.
In this embodiment, support the big board through adjusting each group and support protruding to the maximum height of piece, and each group supports protruding piece and protruding to the maximum height in turn, make at different moments, the big board supports protruding piece butt with the difference in different positions, can effectively avoid supporting the long-time butt of protruding piece in the sculpture in the big board the same position, effectively avoid the big board to produce bad spot, in addition, can also avoid piling up of reaction product, the production probability of bad spot has been reduced, make the yield of big board obtain improving.
In one embodiment, as shown in fig. 1 and 2, there is provided a substrate dry etching apparatus 10 including: an upper electrode plate 100, a lower electrode plate 200, and at least two sets of support protrusions 300; the upper electrode plate 100 and the lower electrode plate 200 are arranged opposite to each other at intervals; the lower electrode plate 200 is provided with a plurality of movable holes 220 and a plurality of air holes 210, each air hole 210 penetrates through two opposite surfaces of the lower electrode plate 200, and each movable hole 220 is formed in one surface of the lower electrode plate 200 facing the upper electrode plate 100; each group of the supporting protrusions 300 comprises a plurality of supporting protrusions 300, and each supporting protrusion 300 is movably inserted into one of the movable holes 220; the maximum heights of the supporting protrusions 300 protruding from the surface of the lower electrode plate 200 are the same; each set of the support protrusions 300 is used to alternately protrude to a maximum height during the etching process, and only one set of the support protrusions 300 protrudes to the maximum height at any one time. Each set of the support protrusions 300 is used to be alternately raised to a maximum height during the etching process, and only one set of the support protrusions 300 is raised to the maximum height at any one time.
Specifically, the upper electrode plate 100 may also be referred to as an upper electrode, the lower electrode plate 200 may also be referred to as a lower electrode, the upper electrode plate 100 and the lower electrode plate 200 are arranged opposite to each other and at an interval, after the upper electrode plate 100 and the lower electrode plate 200 are powered on, an electric field is formed between the upper electrode plate 100 and the lower electrode plate 200, the large plate 700 is placed between the upper electrode plate 100 and the lower electrode plate 200, and plasma bombards and etches a film layer on the large plate under the action of the electric field. The large plate 700 includes a plurality of substrates, which are formed by cutting the large plate after etching.
The air holes 210 are used for introducing nitrogen, so that the nitrogen can be blown to the large plate to cool the large plate. For example, each of the gas holes 210 is communicated with the nitrogen gas storage tank through a gas pipe, so that nitrogen gas in the nitrogen gas storage tank can be blown to the large plate on the lower electrode plate 200 through the gas pipe and the gas holes 210. The lower electrode plate 200 is used to support a large plate, and particularly, the support protrusions 300 on the lower electrode plate 200 are used to support a large plate 700.
For example, each group of the supporting protrusions 300 has the same number of supporting protrusions 300, for example, the lower electrode plate 200 is provided with a plurality of moving holes 220, each moving hole 220 is movably provided with a supporting protrusion 300, that is, the lower electrode plate 200 is movably provided with a plurality of supporting protrusions 300, and the plurality of supporting protrusions 300 are divided into at least two groups. Each of the support protrusions 300 moves in the depth direction of the movable hole 220 or moves in the opposite direction, so that the support protrusion 300 is raised or lowered in the movable hole 220, and thus raised on the surface of the lower electrode plate 200, and when the support protrusion 300 is raised to the maximum height, that is, raised to the maximum height, the support protrusion 300 abuts against the large plate, thereby supporting the large plate.
For example, each set of the support protrusions 300 is used to protrude one and only one set of the support protrusions 300 to the maximum height at any time during the dry etching, and after a predetermined time, protrude the other set of the support protrusions 300 to the maximum height.
For example, each set of the support protrusions 300 is used to be raised to the maximum height and maintained for a predetermined time, and after the predetermined time, the set of the support protrusions 300 is lowered to the minimum height, and at the same time, another set of the support protrusions 300 is raised to the maximum height, so that at any time during the etching process, only one set of the support protrusions 300 is raised to the maximum height, and the large plate is well supported, so that the stress of the large plate is balanced, and the large plate is kept balanced during the etching process.
It should be noted that, in order to enable the large plate to be stably supported at any time during the etching process, for example, before the first set of support protrusions 300 that are currently protruded to the maximum height are lowered, the second set of support protrusions 300 are gradually raised to the maximum height, and when the second set of support protrusions 300 are raised to the maximum height, the first set of support protrusions 300 are lowered. Thus, in the etching process, the support of the large plate by the at least one group of support protrusions 300 is maintained, and the large plate is prevented from inclining or vibrating in the absence of support, so that the large plate can be stably supported in the etching process.
In this embodiment, support the big board through adjusting that each group supports protruding piece 300 and protruding to the maximum height, and each group supports protruding piece 300 and protruding to the maximum height in turn, make at different moments, the big board supports protruding piece 300 butt with the difference in different positions, can effectively avoid supporting protruding piece 300 in the sculpture and butt the same position on the big board for a long time, effectively avoid the big board to produce bad spot, in addition, can also avoid piling up of reaction product, the probability of producing of bad spot has been reduced, make the yield of big board obtain improving.
In addition, because the position of big board and each support protruding piece 300 butt is in lasting transform, effectively avoids the heat to concentrate for the heat gives off more fast, makes the temperature distribution of big board more even, can alleviate support protruding piece 300 and glass substrate contact time overlength and lead to the inhomogeneous phenomenon of temperature.
In order to allow the support protrusions 300 to be alternately raised better, to balance the large plate, and to make the large plate more evenly stressed and heated, in one embodiment, the number of the support protrusions 300 is three. For example, three sets of the support protrusions 300 are used to be alternately raised to the maximum height in sequence, and only one set of the support protrusions 300 is raised to the maximum height at any one time during the etching process. Like this, through the alternation of the protruding piece 300 of support of three groups, can make all have at least a set of protruding piece 300 butt in the big board at any moment, support the big board, and because three sets of protruding pieces 300 of support butt respectively in the different positions of big board, thereby make different positions on the big board can alternate with the protruding piece 300 butt of support, make the butt time of each position with the protruding piece 300 butt of support on the big board shorter, further make the temperature distribution of big board more even, and avoid producing the pile up of reaction product more effectively, further avoid the production of bad spot.
In one embodiment, as shown in fig. 2, the three sets of supporting protrusions 300 include a set of first protrusions 310, a set of second protrusions 320, and a set of third protrusions 330, the set of first protrusions 310 includes a plurality of first protrusions 310, that is, the first set of supporting protrusions 300 is the first protrusions 310, the second set of supporting protrusions 300 is the second protrusions 320, the third set of supporting protrusions 300 is the third protrusions 330, the set of second protrusions 320 includes a plurality of second protrusions 320, the set of third protrusions 330 includes a plurality of third protrusions 330, each of the first protrusions 310 is disposed adjacent to one of the second protrusions 320 and one of the third protrusions 330, and a set of supporting members 350 is formed by adjacent ones of the first protrusions 310, the second protrusions 320, and the third protrusions 330. For example, each set of the support members 350 is symmetrically disposed about the geometric center of the lower electrode plate 200. For example, the lower electrode plate 200 is rectangular, each group of the support assemblies 350 is symmetric with respect to the center point of the lower electrode plate 200, for example, each group of the support assemblies 350 is axisymmetric with respect to the center axis of the lower electrode plate 200, so that, by symmetrically disposing each support assembly 350, each group of the support assemblies 350 has another component assembly symmetric with the other group of the support assemblies, the stress of the large plate is more balanced, the temperature distribution is more uniform, and the etching yield of the large plate is further improved.
It should be understood that, in the present embodiment, the first protruding member 310, the second protruding member 320, and the third protruding member 330 are all the supporting protruding members 300, in the present embodiment, each supporting protruding member 300 is divided into the first protruding member 310, the second protruding member 320, and the third protruding member 330 according to the different rising time of each group of supporting protruding members 300, for example, the number of the first protruding member 310, the second protruding member 320, and the third protruding member 330 is plural, for example, the number of the first protruding member 310, the second protruding member 320, and the third protruding member 330 is equal, for example, the first protruding member 310, the second protruding member 320, and the third protruding member 330 are in one-to-one correspondence and are adjacently arranged, so that the local position on the large plate can be abutted with the first protruding member 310, the second protruding member 320, and the third protruding member 330, respectively, so that the local stress of the large plate is more balanced, and the temperature distribution is more uniform, further improving the etching yield of the large plate.
In order to make the large plate more evenly stressed and the temperature distribution more uniform, in one embodiment, the first protruding members 310, the second protruding members 320 and the third protruding members 330 in each set of the supporting members 350 are arranged along a straight line. For example, the straight lines on which the supporting members 350 of the respective groups are arranged are inclined to each other.
In one embodiment, the first protruding members 310, the second protruding members 320 and the third protruding members 330 in each set of the supporting members 350 are arranged in a triangular matrix. That is, the first protrusion 310, the second protrusion 320, and the third protrusion 330 in each set of the support members 350 are respectively disposed at three vertexes of a triangle.
For example, as shown in fig. 2, at least some of the first protruding members 310, the second protruding members 320, and the third protruding members 330 of the support assembly 350 are arranged along a straight line, and at least some of the first protruding members 310, the second protruding members 320, and the third protruding members 330 of the support assembly 350 are arranged in a triangular matrix, so that the first protruding members 310, the second protruding members 320, and the third protruding members 330 of each support assembly 350 are arranged in different shapes or arranged in different regular arrangements, so that the large board can be more uniformly supported by the first protruding members 310, the second protruding members 320, and the third protruding members 330, the temperature distribution of the large board is more uniform, and the etching yield of the large board is further improved.
In order to make the contact area between each supporting protrusion 300 and the large plate the same, so that the stress on the large plate is more uniform and the temperature distribution is more uniform, in one embodiment, the widths of the supporting protrusions 300 in each group are equal. For example, the width of each of the support protrusions 300 in each group is equal, for example, the width of each of the support protrusions 300 is equal. For example, each set of the support protrusions 300 has the same sectional shape. For example, each of the support protrusions 300 in each group has the same cross-sectional shape, for example, each of the support protrusions 300 has the same cross-sectional shape. For example, the cross-sections of the support protrusions 300 in each group have the same shape, for example, the cross-sections of each support protrusion 300 in each group have the same shape, for example, the cross-sections of the support protrusions 300 have the same shape.
For example, the widths of the first protrusion members 310, the second protrusion members 320, and the third protrusion members 330 are equal, and for example, the cross-sectional shapes of the first protrusion members 310, the second protrusion members 320, and the third protrusion members 330 are the same.
Therefore, the contact area of each supporting protrusion 300 and the large plate is equal, the stress of the large plate is more balanced, the temperature distribution is more uniform, and the etching yield of the large plate is further improved.
In order to enable the sets of the support protrusions 300 to have the same movement stroke, in one embodiment, the minimum height of the sets of the support protrusions 300 protruding from the surface of the lower electrode plate 200 is equal. For example, the minimum height of each of the support protrusions 300 in each group protruding from the surface of the lower electrode plate 200 is equal. In this way, since the maximum height and the minimum height of each of the supporting protrusions 300 protruding from the surface of the lower electrode plate 200 are equal, the moving strokes of the supporting protrusions 300 are equal, which is beneficial to stably supporting a large plate.
In order to allow the sets of the support protrusions 300 to protrude, for example, the minimum height of each of the support protrusions 300 of the sets protruding from the surface of the lower electrode plate 200 is zero, each of the support protrusions 300 of the sets
When each supporting protrusion 300 is at the raised minimum height, the top end of the supporting protrusion 300 is flush with one surface of the lower electrode plate 200 facing the upper electrode plate 100, so that each supporting protrusion 300 can be sufficiently away from the large plate, the influence on the cooling of nitrogen is avoided, the large plate can be cooled better, and the etching effect of the large plate is better.
In order to make the supporting protrusions 300 have the same movement stroke and make the same set of supporting protrusions 300 abut against the large board at the same time, and provide a smooth support for the large board, in one embodiment, the lengths of the supporting protrusions 300 in each set are equal. For example, each of the support protrusions 300 in each group has an equal length. Like this, the support protruding piece 300 of same group or different groups has the same movement stroke for the big board is supported steadily, in addition, can make the support protruding piece 300 of the same group can butt in the big board simultaneously, provides steadily for the big board and supports, effectively avoids the big board slope.
In order to achieve the alternating lifting of the sets of support protrusions, for example, the substrate dry etching apparatus further includes a plurality of lifting drivers, each lifting driver being in driving connection with one of the support protrusions, for example, the lifting driver includes a plurality of first drivers, a plurality of second drivers, and a plurality of third drivers, for example, each first driver being in driving connection with a first protrusion for lifting along the movable hole under the driving of the first driver, for example, each second driver being in driving connection with a second protrusion for lifting along the movable hole under the driving of the second driver, for example, each third driver being in driving connection with a third protrusion for lifting along the movable hole under the driving of the third driver.
For example, the substrate dry etching device further comprises a controller, the controller is electrically connected with each first driver, each second driver and each third driver, the controller is used for controlling each first driver, each second driver and each third driver to work, for example, the controller is used for driving each group of the supporting protrusions to protrude to the maximum height alternately through each first driver, each second driver and each third driver during the dry etching process, and only one group of the supporting protrusions protrude to the maximum height at any time. Each group of the supporting protrusions are alternately lifted to the maximum height in the etching process under the control of the controller, and only one group of the supporting protrusions is lifted to the maximum height at any time.
For example, the controller is configured to drive the first protruding members, the second protruding members and the third protruding members to alternately protrude to a maximum height by each of the first drivers, each of the second drivers and each of the third drivers during the dry etching, and only one set of the support protruding members protrudes to the maximum height at any one time. The first protruding part, the second protruding part and the third protruding part are used for being alternately lifted to the maximum height in the etching process under the control of the controller, and only one group of the supporting protruding parts is lifted to the maximum height at any time.
The driving structure of the controller and the lifting driver for the supporting protrusion will be further described in the following embodiments.
In one embodiment, as shown in fig. 1 and 2, there is provided a substrate dry etching apparatus 10 including:
an upper electrode plate 100, a lower electrode plate 200, and a plurality of support protrusions 300; the upper electrode plate 100 and the lower electrode plate 200 are arranged opposite to each other at intervals; the lower electrode plate 200 is provided with a plurality of movable holes 220 and a plurality of air holes 210, each air hole 210 penetrates through two opposite surfaces of the lower electrode plate 200, and each movable hole 220 is formed in one surface of the lower electrode plate 200 facing the upper electrode plate 100; each supporting protrusion 300 is movably inserted into one of the movable holes 220, the width of each movable hole 220 is the same, the shape of the cross section of each movable hole 220 is the same, and each supporting protrusion 300 abuts against the corresponding side wall of the movable hole 220; the maximum heights of the respective supporting protrusions 300 protruding from the surface of the lower electrode plate 200 are the same.
In addition, as shown in fig. 1, each of the supporting protrusions 300 abuts against the corresponding sidewall of the movable hole 220, that is, when the supporting protrusion 300 moves in the movable hole 220, the side surface of the supporting protrusion 300 is supported by the sidewall of the movable hole 220, for example, the supporting protrusion 300 moves along the depth direction of the movable hole 220, and the abutting of the sidewall of the movable hole 220 against the supporting protrusion 300 provides support for the supporting protrusion 300 from the lateral direction, limits the offset of the supporting protrusion 300 in the lateral direction, avoids the offset of the supporting protrusion 300 in the direction perpendicular to the depth direction, makes the movement of the supporting protrusion 300 more stable, and effectively avoids the offset or tilt of the supporting protrusion 300 during the supporting process of the large board, making the supporting effect of the large board better.
In order to make the cooling of the large plate more uniform, for example, the width of each of the air holes 210 is the same, for example, each of the air holes 210 has a circular cross section, that is, the cross section of the air hole 210 is circular, the air hole 210 is in a cylindrical shape, and the aperture of each of the air holes 210 is equal, so that the amount of injected nitrogen of each of the air holes 210 is equal due to the equal aperture of each of the air holes 210, which is beneficial to make the cooling of the large plate more uniform.
It is worth mentioning that, in order to enable the supporting protrusion 300 to abut against the sidewall of the movable hole 220, for example, each supporting protrusion 300 and the corresponding movable hole 220 have the same cross-sectional shape, for example, the cross-sectional shape of each supporting protrusion 300 is the same as that of the movable hole 220, for example, the width of each supporting protrusion 300 is equal to that of the movable hole 220, so that each supporting protrusion 300 can smoothly move in each movable hole 220, and the supporting effect on the large panel is better.
In order to make the support protrusions 300 more compatible with the moving holes 220, for example, as shown in fig. 2, each of the support protrusions 300 has a circular cross section, i.e., the lateral cross section of the support protrusion 300 is circular, and for example, each of the moving holes 220 has a circular cross section, i.e., the lateral cross section of the moving hole 220 is circular.
For example, each of the support protrusions has a rectangular cross section, and for example, each of the movable holes has a rectangular cross section. For example, each of the support protrusions has a square cross section, and for example, each of the movable holes has a square cross section. For example, each of the support protrusions has a polygonal cross section, and for example, each of the movable holes has a polygonal cross section. For example, each of the support protrusions has a hexagonal cross section, and for example, each of the movable holes has a hexagonal cross section. For example, each of the support protrusions has an octagonal cross section, and for example, each of the moving holes has an octagonal cross section. In other embodiments, the cross section of the support protrusion may have other shapes, and the movable hole has the same shape as the cross section of the support protrusion, which is not described herein redundantly.
In order to enable each supporting protrusion 300 to provide a uniform supporting force for a large plate, for example, the length of each supporting protrusion 300 is equal, for example, the depth of each moving hole 220 is equal, which is advantageous for each supporting protrusion 300 to have the same protrusion height when rising in the moving hole 220, so that each supporting protrusion can provide a more uniform supporting force for the large plate.
In order to prevent the descending supporting protrusions 300 from abutting against the large plate, so that the cooling effect of the large plate is better, in one embodiment, the minimum height of the surface of the lower electrode plate 200 protruded by each supporting protrusion 300 is equal. For example, the minimum height of each supporting protrusion 300 protruding from the surface of the lower electrode plate 200 is zero, for example, when each supporting protrusion 300 is at the raised minimum height, the top end of the supporting protrusion 300 is flush with the surface of the lower electrode plate 200 facing the upper electrode plate 100, so that each lowered supporting protrusion 300 can be sufficiently away from the large plate, the influence on the cooling of nitrogen gas is avoided, and the large plate can be cooled better.
In the above embodiment, the maximum heights of the protrusions of the supporting protrusions 300 are equal, and the minimum heights of the protrusions are equal, so that the supporting protrusions 300 abut against one end of the large plate and are located on the same plane, and it is desired that each of the supporting protrusions 300 is flush with a surface of the lower electrode plate 200 facing the upper electrode plate 100, and the lengths of the supporting protrusions 300 are equal, so that each of the supporting protrusions 300 abutting against the large plate can better support the large plate, and each of the supporting protrusions 300 after being lowered can avoid affecting cooling, thereby improving the etching effect of the large plate.
In order to realize the lifting of each supporting protrusion 300 in the movable hole 220, for example, as shown in fig. 3, each movable hole 220 is opened on a surface of the lower electrode plate 200 facing the upper electrode plate 100, and each movable hole 220 does not penetrate through a surface of the lower electrode plate 200 facing away from the upper electrode plate 100, that is, the movable hole 220 is a blind hole, the movable hole 220 is concavely arranged on a surface of the lower electrode plate 200 facing the upper electrode plate 100, a lifting driver 400 is arranged at a bottom of each movable hole 220, each lifting driver 400 is drivingly connected to one supporting protrusion 300, so that each supporting protrusion 300 can move in the movable hole 220 by the driving of the lifting driver 400 to realize the lifting, for example, the substrate dry etching apparatus 10 further comprises a controller (not shown) electrically connected to each lifting driver 400, the controller is used to control the operation of each of the lifting drivers 400, thereby achieving the adjustment of the height of each of the supporting protrusions 300.
It should be noted that the lifting drivers 400 can be implemented by the prior art, for example, as shown in fig. 3, each lifting driver 400 includes a micro motor 410 and a lead screw 420, and each micro motor 410 is drivingly connected to a supporting protrusion 300 through a lead screw 420. In other embodiments, lift drive 400 may also be implemented in other existing ways, which are not redundantly described in this embodiment. Like this, bottom through each activity hole 220 sets up lift driver 400 for lift driver 400 can drive each lift that supports protruding piece 300 better, makes support protruding piece 300 can the stationary motion, can adapt to the big board of different specification models, effectively avoids the bad spot of production of big board, makes the sculpture effect of big board better.
In order to realize the driving of each supporting protrusion 300, in one embodiment, as shown in fig. 4, each movable hole 220 penetrates through two opposite surfaces of the lower electrode plate 200, that is, each movable hole 220 is opened on a surface of the lower electrode plate 200 facing the upper electrode plate 100, and each movable hole 220 penetrates through a surface of the lower electrode plate 200 facing away from the upper electrode plate 100, in this embodiment, a supporting plate 500 is further included, the supporting plate 500 is disposed on a side of the lower electrode plate 200 facing away from the upper electrode plate 100, the supporting plate 500 is spaced apart from the lower electrode plate 200, the supporting plate 500 is fixedly connected to the lower electrode plate 200 through a supporting frame 510, a plurality of lifting drivers 400 are disposed on the supporting plate 500, each lifting driver 400 is aligned to one movable hole 220, each lifting driver 400 is drivingly connected to one supporting protrusion 300, each supporting protrusion 300 is movably inserted into one movable hole 220, each support protrusion 300 is configured to move in the movable hole 220 under the driving of each lift driver 400, and the movable protrusion is formed on a surface of the lower electrode plate 200 facing the upper electrode plate 100, for example, in this embodiment, the substrate dry etching apparatus 10 further includes a controller electrically connected to each lift driver 400, the controller being configured to control the operation of each lift driver 400, so as to adjust the height of each support protrusion 300.
In this way, by disposing the lifting driver 400 on the supporting plate 500, the lifting driver 400 is easier to be stopped, and the connection between the lifting driver 400 and the controller is facilitated, so that the structure of the substrate dry etching apparatus 10 is simpler and the deployment is facilitated.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A substrate dry etching device is characterized by comprising an upper electrode plate, a lower electrode plate and at least two groups of supporting convex pieces;
the upper electrode plate and the lower electrode plate are opposite and arranged at intervals; the lower electrode plate is provided with a plurality of movable holes and a plurality of air holes, each air hole penetrates through two opposite surfaces of the lower electrode plate, and each movable hole is formed in one surface, facing the upper electrode plate, of the lower electrode plate;
each group of the supporting convex pieces comprises a plurality of supporting convex pieces, and each supporting convex piece is movably inserted into one movable hole; the maximum heights of the supporting convex pieces protruding from the surface of the lower electrode plate are the same;
each group of the supporting convex parts is used for alternately protruding to the maximum height in the etching process, and only one group of the supporting convex parts protrudes to the maximum height at any time.
2. The substrate dry etching apparatus according to claim 1, wherein the number of the groups of the support protrusions is three.
3. The dry etching apparatus for substrates according to claim 2, wherein the three sets of supporting protrusions include a set of first protrusions, a set of second protrusions, and a set of third protrusions, each of the first protrusions is disposed adjacent to one of the second protrusions and one of the third protrusions, and a set of supporting members is formed by adjacent ones of the first protrusions, the second protrusions, and the third protrusions.
4. The substrate dry etching apparatus according to claim 3, wherein each group of the support members is symmetrically disposed about a geometric center of the lower electrode plate.
5. The apparatus according to claim 3, wherein the first protruding member, the second protruding member, and the third protruding member of each group of the support assemblies are arranged along a line.
6. The dry etching apparatus for substrate according to claim 3, wherein the first protruding members, the second protruding members and the third protruding members of each group of the supporting assemblies are distributed in a triangular matrix.
7. The substrate dry etching apparatus according to claim 1, wherein the support protrusions of each group have the same width.
8. The substrate dry etching apparatus according to claim 1, wherein each of the sets of the support protrusions has the same sectional shape.
9. The substrate dry etching apparatus according to claim 1, wherein the minimum height of the support protrusions of each set protruding from the surface of the lower electrode plate is equal.
10. The substrate dry etching apparatus according to claim 1, wherein the support protrusions of each group have equal lengths.
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| CN201711490172.1A CN108231520B (en) | 2017-12-29 | 2017-12-29 | Substrate dry etching device |
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| CN201711490172.1A CN108231520B (en) | 2017-12-29 | 2017-12-29 | Substrate dry etching device |
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| CN108231520B true CN108231520B (en) | 2020-02-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047143A (en) * | 2006-03-31 | 2007-10-03 | 东京毅力科创株式会社 | Basal plate carrying table and basal plate processing device |
| KR20140070049A (en) * | 2012-11-30 | 2014-06-10 | 삼성디스플레이 주식회사 | Substrate supporting unit and apparatus of treating substrate having the same |
| WO2015156529A1 (en) * | 2014-04-11 | 2015-10-15 | 주식회사 좋은기술 | Substrate heating device |
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2017
- 2017-12-29 CN CN201711490172.1A patent/CN108231520B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047143A (en) * | 2006-03-31 | 2007-10-03 | 东京毅力科创株式会社 | Basal plate carrying table and basal plate processing device |
| KR20140070049A (en) * | 2012-11-30 | 2014-06-10 | 삼성디스플레이 주식회사 | Substrate supporting unit and apparatus of treating substrate having the same |
| WO2015156529A1 (en) * | 2014-04-11 | 2015-10-15 | 주식회사 좋은기술 | Substrate heating device |
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