CN108212949A - A kind of plasma cleaning equipment - Google Patents
A kind of plasma cleaning equipment Download PDFInfo
- Publication number
- CN108212949A CN108212949A CN201810007057.2A CN201810007057A CN108212949A CN 108212949 A CN108212949 A CN 108212949A CN 201810007057 A CN201810007057 A CN 201810007057A CN 108212949 A CN108212949 A CN 108212949A
- Authority
- CN
- China
- Prior art keywords
- baffle
- plasma
- spray orifice
- substrate
- cleaning equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 81
- 239000007921 spray Substances 0.000 claims abstract description 141
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000005507 spraying Methods 0.000 abstract description 13
- 238000002156 mixing Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 9
- 210000002381 plasma Anatomy 0.000 description 96
- 238000010586 diagram Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
Abstract
The invention discloses a kind of plasma cleaning equipments.The cleaning equipment is included for the cavity for generating plasma and the baffle arrangement that plasma is made to be sprayed to substrate, the baffles that the baffle arrangement is provided with multiple spray orifices including at least two, and the spray orifice in adjacent screen is interlaced.The cleaning equipment is interlaced by making the spray orifice in baffle arrangement in adjacent screen, improve the mixing uniformity of different plasma, eliminate the flow difference for the plasma that different spray orifices spray, so that the plasma flow for spraying to substrate is more uniform, realize the uniformity for the plasma for spraying to substrate, the cleaning performance difference of substrate surface is avoided, avoids resulting base board defect, improves the quality of substrate.
Description
Technical field
The present invention relates to the technical fields cleaned to substrate in semiconductor and display industry, and in particular to a kind of grade from
Sub- cleaning equipment.
Background technology
It, all can be through works such as over cleaning, coating, exposure, development, bakings during prepared by substrate in display technology field
Skill on substrate to form the pattern of needs.Substrate is required for after cleaning by plasma cleaning equipment.Plasma cleaning is set
The standby plasma sprayed is combined with the organic matter of substrate surface, and oxidation operation is resolved into water and carbon dioxide etc. to remove
The organic matter of substrate surface.Therefore, the cleaning performance of plasma cleaning equipment directly affects the quality of substrate.
There is the plasma nonuniformity sprayed in existing plasma cleaning equipment, the cleaning of substrate surface is caused to imitate
Fruit has differences, and substrate is caused to generate defect, reduces the quality of substrate.
Invention content
The embodiment of the present invention is the technical problem to be solved is that, provide a kind of plasma cleaning equipment, to solve plasma
The technical issues of plasma nonuniformity that cleaning equipment sprays.
In order to solve the above-mentioned technical problem, an embodiment of the present invention provides a kind of plasma cleaning equipments, are produced including being used for
It gives birth to the cavity of plasma and makes the baffle arrangement that plasma is sprayed to substrate, the baffle arrangement includes at least two settings
There is a baffle of multiple spray orifices, the spray orifice in adjacent screen is interlaced.
Optionally, the baffle arrangement includes first baffle and second baffle, and the first baffle is set close to the cavity
It puts, the second baffle is arranged between the first baffle and substrate, and multiple first spray orifices are provided on the first baffle,
Multiple second spray orifices are provided on the second baffle, the aperture of second spray orifice is less than the aperture of first spray orifice.
Optionally, the aperture D1 of first spray orifice is 4mm~6mm, the aperture D2 of second spray orifice for 2.5mm~
5mm。
Optionally, the aperture of second spray orifice is the 1/3~2/3 of the aperture of first spray orifice.
Optionally, the baffle arrangement further includes the first telecontrol equipment for making the first baffle movement.
Optionally, the baffle arrangement further includes third baffle, and the third baffle is arranged on the second baffle and base
Between plate, multiple third spray orifices are provided in the third baffle, the aperture of the third spray orifice is less than second spray orifice
Aperture.
Optionally, the aperture of the third spray orifice is 0.5mm~2.5mm.
Optionally, the aperture of the third spray orifice is the 1/3~2/3 of the aperture of second spray orifice.
Optionally, the cleaning equipment further includes the second telecontrol equipment for making the second baffle movement.
Optionally, the shape of spray orifice is round or polygon on baffle.
The plasma cleaning equipment that the embodiment of the present invention proposes, by making the spray orifice in baffle arrangement in adjacent screen mutual
Staggeredly, the mixing uniformity of different plasma is improved, the flow difference for the plasma that different spray orifices spray is eliminated, makes
The plasma flow that substrate must be sprayed to is more uniform, realizes the uniformity for the plasma for spraying to substrate, avoids substrate
The cleaning performance difference on surface, avoids resulting base board defect, improves the quality of substrate.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used for providing further understanding technical solution of the present invention, and a part for constitution instruction, with this
The embodiment of application technical solution for explaining the present invention together, does not form the limitation to technical solution of the present invention.
Fig. 1 a are a kind of structure diagram of plasma cleaning equipment；
Fig. 1 b are the overlooking the structure diagram of baffle in Fig. 1 a；
Fig. 1 c are using the structure diagram of substrate prepared after the cleaning equipment cleaning shown in Fig. 1 a；
Fig. 1 d are the partial structural diagram of baffle in Fig. 1 b；
Fig. 1 e are the structural representation that the substrate after the plasma clean of substrate is sprayed to via three circular holes shown in Fig. 1 d
Figure；
When Fig. 1 f are different pore size error, the density schematic diagram for the plasma that circular hole sprays；
Fig. 2 is the structure diagram of first embodiment of the invention plasma cleaning equipment；
Fig. 3 is the overlooking the structure diagram of first embodiment of the invention second baffle；
Fig. 4 is the structure diagram of second embodiment of the invention plasma cleaning equipment
Fig. 5 is the structure diagram of third embodiment of the invention plasma cleaning equipment；
Fig. 6 is the overlooking the structure diagram of third embodiment of the invention third baffle.
Reference sign：
10- cavitys；11- baffles；12- circular holes；
20- substrates；31- first baffles；The first spray orifices of 32-；
41- second baffles；The second spray orifices of 42-；51- third baffles；
52- third spray orifices；The first telecontrol equipments of 60-；The second telecontrol equipments of 70-；
The first circular holes of 121-；The second circular holes of 122-；123- third circular holes.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature mutually can arbitrarily combine.
Fig. 1 a are a kind of structure diagram of plasma cleaning equipment.Compression is passed through into chamber 10 from the top of chamber 10
Dry air (Compressed Dry Air, CDA) and nitrogen (N2), compression drying air and nitrogen are in the effect of excitation power supply
It is lower to form corresponding plasma.The bottom of chamber 10 is provided with baffle 11.Fig. 1 b are that the plan structure of baffle 11 in Fig. 1 a is shown
It is intended to, can be seen that with reference to Fig. 1 a and Fig. 1 b has multiple spaced circular holes 12 on baffle 11.Plasma in chamber 10
Body is ejected into the surface of substrate 20 by the circular hole 12 on baffle 11.Through inventor the study found that by the circular hole on baffle 11
There are mass flow discrepancy is even and CDA plasmas and N for 12 plasmas sprayed2Plasma mixing non-uniform phenomenon, causes
The cleaning performance on 20 surface of substrate has differences so that after coating processes, the film thickness on substrate has differences, and leads to substrate
Generate defect.Fig. 1 c are using the structure diagram of substrate prepared after the cleaning equipment cleaning shown in Fig. 1 a.From Fig. 1 c
As can be seen that due to spraying to the plasma of substrate, there are mass flow discrepancy is even and CDA plasmas and N2Plasma mixes
It is uneven so that the film thickness on substrate is inconsistent, leads to base board defect.For example, as shown in Figure 1 d, three adjacent circles on baffle
Hole is respectively the first circular hole 121, the second circular hole 122 and third circular hole 123.Fig. 1 e is spray to via three circular holes shown in Fig. 1 d
The structure diagram of substrate after the plasma clean of substrate.The plasma sprayed due to the first circular hole 121 and the second circle
The flow for the plasma that hole 122 and third circular hole 123 spray has differences, cause with 121 corresponding region of the first circular hole with
The cleaning performance of its neighboring area has differences, and eventually leads to the film with 121 corresponding region of the first circular hole and its neighboring area
Thickness has differences, and substrate is made to generate defect.
The aperture of the circular hole of baffle shown in Fig. 1 a and Fig. 1 b is generally 5mm, and the centre-to-centre spacing of two neighboring circular hole is generally
5mm to 10mm.In the circular hole 12 on making baffle, there are certain error, different circular holes 12 in the aperture of each circular hole 12
Aperture error it is different, the flow of plasma that different circular holes 12 spray can be caused different, lead to the density of plasma not
Together.When Fig. 1 f are different pore size error, the density schematic diagram for the plasma that circular hole sprays.It is represented in circular hole at abscissa 0
Heart position.As can be seen that the plasma density of center of circular hole position and the plasma of bore edges position are close from Fig. 1 f
Degree has differences, and when aperture error is larger, differs greatly.As it can be seen that since the aperture error of different circular holes 12 has differences, lead
The plasma flow that different circular holes 12 spray is caused to have differences so that the plasma flow sprayed via baffle is uneven.
In order to solve the problems, such as the plasma nonuniformity of plasma cleaning equipment ejection, the embodiment of the present invention proposes one kind
Plasma cleaning equipment.The cleaning equipment is included for the cavity for generating plasma and the gear that plasma is made to be sprayed to substrate
Harden structure, which is characterized in that the baffle arrangement includes at least two baffles for being provided with multiple spray orifices, the spray in adjacent screen
Hole is interlaced.
The plasma cleaning equipment that the embodiment of the present invention proposes, by making the spray orifice in baffle arrangement in adjacent screen mutual
Staggeredly, the mixing uniformity of different plasma is improved, the flow difference for the plasma that different spray orifices spray is eliminated, makes
The plasma flow that substrate must be sprayed to is more uniform, realizes the uniformity for the plasma for spraying to substrate, avoids substrate
The cleaning performance difference on surface, avoids resulting base board defect, improves the quality of substrate.
The technology contents that the present invention will be discussed in detail by specific embodiment below.
First embodiment：
Fig. 2 is the structure diagram of first embodiment of the invention plasma cleaning equipment.The cleaning equipment includes producing
It gives birth to the cavity 10 of plasma and makes the baffle arrangement that plasma is sprayed to substrate 20.Baffle arrangement includes at least two settings
There is a baffle of multiple spray orifices, the spray orifice in adjacent screen is interlaced.In the present embodiment, baffle arrangement includes first baffle 31
With second baffle 41.First baffle 31 is set close to cavity 10, and second baffle 41 is arranged between first baffle 31 and substrate 20.
Multiple first spray orifices 32 are provided on first baffle 31, multiple second spray orifices 42, the first spray orifice 32 are provided on second baffle 41
It is interlaced with the second spray orifice 42.
In the present embodiment, CDA and N are passed through into chamber 10 from the top of chamber 102, CDA and N2 are in excitation power supply
Plasma is formed under effect.It is easily understood that in other embodiments, can also be passed through into chamber 10 other gases with
Form plasma.Plasma is ejected into the surface of substrate 20 after first baffle 31 and second baffle 41.First baffle
31 can be by CDA plasmas and N2Plasma is tentatively mixed, however the plasma sprayed from the first spray orifice 32 is deposited
It is interlaced by the second spray orifice 42 and the first spray orifice 32 in the even phenomenon of mass flow discrepancy, it can be sprayed by difference first
The plasma that hole 32 sprays further mixes diffusion, eliminates the difference between the plasma flow that different first spray orifices 32 spray
It is different so that the plasma flow for spraying to substrate 20 is more uniform, in addition, the second spray orifice 42 and the first spray orifice 32 is interlaced may be used also
To improve CDA plasmas and N2The mixing uniformity of plasma, the flow for realizing the plasma for spraying to substrate 20 are equal
The mixing uniformity of even property and different plasma avoids the cleaning performance difference on 20 surface of substrate, avoids and thus generate
Base board defect, improve the quality of substrate.
In the present embodiment, the aperture of the first spray orifice 32 is D1, and the aperture of the second spray orifice 42 is D2, the hole of the second spray orifice 42
Diameter is less than the aperture of the first spray orifice 32, i.e. D2 ＜ D1.Between the plasma that different second spray orifices 42 ejections can be reduced in this way
Flow difference, further improve the discharge uniformity for the plasma for spraying to substrate 20, while can improve and spray to substrate 20
Plasma flow velocity, improve cleaning efficiency.
Preferably, the aperture D1 of the first spray orifice 32 is 4mm~6mm, and the aperture D2 of the second spray orifice 42 is 2.5mm~5mm.This
The aperture of sample is conducive to improve the mixing uniformity for the different plasma for spraying to substrate 20, further eliminates between different spray orifices
Plasma flow difference.
In order to advanced optimize the uniformization effect of second baffle 41, it is preferable that the aperture D2 of the second spray orifice 42 is first
The 1/3~2/3 of the aperture D1 of spray orifice 32.
In the present embodiment, the spacing M1 not between two neighboring first spray orifice 32 makees concrete restriction, art technology
Personnel understand, in order to realize the cleaning performance of cleaning equipment, the spacing M1 between two neighboring first spray orifice 32 can be according to reality
Border needs to set, and in the present embodiment, D1 ＜ M1≤2D1, herein, the spacing between two neighboring first spray orifice are adjacent two
The distance between center of a first spray orifice.Similarly, the spacing M2 between two neighboring second spray orifice 42 can also be according to reality
It needs to set, in the present embodiment, D2 ＜ M2≤2D2, herein, the spacing between two neighboring second spray orifice are two neighboring
The distance between center of second spray orifice.
In the present embodiment, concrete restriction, ability are made in the gap equally not between first baffle 31 and second baffle 41
Field technique personnel understand, can be according to the specifically setting first of specific implementation situation in order to be conducive to the cleaning performance of cleaning equipment
Gap between baffle 31 and second baffle 41.
Fig. 3 is the overlooking the structure diagram of first embodiment of the invention second baffle.From figure 3, it can be seen that second gear
Multiple second spray orifices 42 are arranged at intervals on plate 41, multiple second spray orifices 42 are in matrix arrangement, adjacent rows or adjacent two row
The second spray orifice 42 be staggered successively.Second spray orifice is set in this way so that sprays region (figure in the plasma of second baffle 41
Dotted line area defined in 3) width and length on be covered with the second spray orifice 42 so that corresponding area on substrate 20
Domain can be covered by plasma, avoid occurring the dead angle that can not be covered by plasma on substrate, improve etc. from
Daughter ensure that the cleaning performance of substrate 20 in the uniformity on 20 surface of substrate.
The second spray orifice 42 shown in Fig. 3 is rounded, and in other embodiments, the second spray orifice can also be triangle, four
One kind in the polygons such as side shape, hexagon.Similarly, the first spray orifice may be one kind in round or polygon.Work as spray orifice
Shape when being polygon, the aperture of spray orifice is the inscribed circle diameter of polygon.In order to ensure that the plasma of cleaning equipment is equal
Effect is homogenized, in the present embodiment, the second spray orifice is identical with the shape of the first spray orifice.
Second embodiment：
Fig. 4 is the structure diagram of second embodiment of the invention plasma cleaning equipment.The cleaning equipment of the present embodiment with
The agent structure of the cleaning equipment of first embodiment is identical, unlike, as shown in figure 4, the cleaning equipment of the present embodiment also wraps
Include the first telecontrol equipment 60 for moving first baffle 31.
In the present embodiment, the first telecontrol equipment 60 makes first baffle 31 back and forth be moved in the plane where first baffle
It is dynamic, the flow difference between different first spray orifices 32 thus can be further eliminated, raising sprays to the plasma of substrate
Discharge uniformity, while the mixing uniformity of different plasma is further improved, the cleaning performance difference of substrate surface is eliminated,
Improve the quality of substrate.In the present embodiment, the reciprocating movement direction of first baffle 31 is parallel with the direction of motion of substrate 20, when
So, the reciprocating movement direction of first baffle 31 can also be vertical with the direction of motion of substrate 20 or at an angle, can reach
To equal technique effect.
3rd embodiment：
Fig. 5 is the structure diagram of third embodiment of the invention plasma cleaning equipment.The cleaning equipment of the present embodiment with
The agent structure of the cleaning equipment of first embodiment is identical, unlike, as shown in figure 5, the cleaning equipment of the present embodiment also wraps
Third baffle 51 is included, third baffle 51 is arranged between second baffle 41 and substrate 20.Multiple are provided in third baffle 51
Three spray orifices 52, third spray orifice 52 and the second spray orifice 42 are interlaced.Third spray orifice 52 and the second spray orifice 42 are interlaced, Ke Yijin
The plasma sprayed by different second spray orifices 42 is carried out mixing diffusion by one step, eliminate grade that different second spray orifices 42 spray from
Daughter flow difference further improves the plasma flux uniformity for spraying to substrate 20, moreover, third spray orifice 52 and second sprays
Hole 42 is interlaced can also to further improve CDA plasmas and N2The mixing uniformity of plasma so that spray to substrate
20 plasma is more uniform.In actual implementation, third baffle 51 usually with substrate 20 very close to, almost with substrate 20
Contact.So the plasmon of substrate is sprayed to by third baffle 51, since there is better discharge uniformity and be uniformly mixed
Property, so as to avoid the cleaning performance difference of substrate surface, resulting base board defect is avoided, improves substrate product
Matter.
In the present embodiment, the aperture of third spray orifice 52 is D3, and the aperture of third spray orifice 52 is less than the hole of the second spray orifice 42
Diameter, i.e. D3 ＜ D2.In this way, after plasma is by third spray orifice 52 in third baffle 51, plasma flow is by again
Homogenization so that spraying to the plasma of substrate 20 has better discharge uniformity, meanwhile, smaller third spray orifice 52 into one
Step improves the spouting velocity of plasma, improves the cleaning performance of cleaning equipment.
In the present embodiment, the aperture D3 of third spray orifice 52 is 0.5mm~2.5mm.Such pore diameter range is conducive to carry
Height sprays to the discharge uniformity of the plasma of substrate 20, improves the speed for the plasma for spraying to substrate 20.
Preferably, the aperture D3 of third spray orifice 52 is the 1/3~2/3 of the aperture D2 of the second spray orifice 42.
In the present embodiment, the spacing not between two neighboring third spray orifice 52 makees concrete restriction, people in the art
Member understands, in order to realize the cleaning performance of cleaning equipment, the spacing M3 between two neighboring third spray orifice 52 can be according to reality
It needs to set, in the present embodiment, D3 ＜ M3≤2D3, herein, the spacing between two neighboring third spray orifice are two neighboring
The distance between center of third spray orifice.
Herein, concrete restriction, art technology are made in the gap equally not between second baffle 41 and third baffle 51
Personnel understand, in order to be conducive to the cleaning performance of cleaning equipment, can specifically set second baffle 41 according to specific implementation situation
With the gap between third baffle 51.
Fig. 6 is the overlooking the structure diagram of third embodiment of the invention third baffle.From fig. 6 it can be seen that third gear
Multiple third spray orifices 52 are arranged at intervals on plate 51, multiple third spray orifices 52 are in matrix arrangement, adjacent rows or adjacent two row
Third spray orifice 52 be staggered successively.Third spray orifice is set in this way so that sprays region (figure in the plasma of third baffle 51
Dotted line area defined in 6) width and length on be covered with third spray orifice 52 so that corresponding area on substrate 20
Domain can be covered by plasma, avoid occurring the dead angle that can not be covered by plasma on substrate, improve etc. from
Daughter ensure that the cleaning performance of substrate 20 in the uniformity on 20 surface of substrate.
Third spray orifice 52 shown in Fig. 6 is rounded, and in other embodiments, third spray orifice can also be triangle, four
One kind in the polygons such as side shape, hexagon.When the shape of spray orifice is polygon, the aperture of spray orifice is the inscribed circle of polygon
Diameter.In order to ensure the plasma uniformization effect of cleaning equipment, in the present embodiment, the shape of third spray orifice and the second spray orifice
Shape is identical.
From Fig. 5 it can also be seen that the present embodiment cleaning equipment further include for make second baffle 41 move second
Telecontrol equipment 70.In the present embodiment, the second telecontrol equipment 70 makes second baffle 41 reciprocal in the plane where second baffle
Movement thus can further eliminate the flow difference between different spray orifices, improve the flow for the plasma for spraying to substrate
Uniformity, while the mixing uniformity of different plasma is further improved, the cleaning performance for further eliminating substrate surface is poor
It is different, improve the quality of substrate.In the present embodiment, the reciprocating movement direction of second baffle 41 and the direction of motion of substrate 20 are put down
Row, certainly, the reciprocating movement direction of second baffle 41 can also be vertical with the direction of motion of substrate 20 or at an angle,
To reach equal technique effect.
It is easily understood that the cleaning device of the present embodiment can also include the first fortune for moving first baffle 31
Dynamic device 60, so as to further improve the cleaning performance of cleaning device.
In the description of the embodiment of the present invention, it is to be understood that term " middle part ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instructions such as " vertical ", " level ", " top ", " bottom ", " interior ", " outer " be based on orientation shown in the drawings or
Position relationship is for only for ease of the description present invention and simplifies description rather than instruction or imply that signified device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the description of the embodiment of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integrally
Connection；Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, can above-mentioned art be understood with concrete condition
The concrete meaning of language in the present invention.
Although disclosed herein embodiment as above, the content only for ease of understanding the present invention and use
Embodiment is not limited to the present invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of plasma cleaning equipment, including the cavity for being used to generate plasma and the gear that plasma is made to be sprayed to substrate
Harden structure, which is characterized in that the baffle arrangement includes at least two baffles for being provided with multiple spray orifices, the spray in adjacent screen
Hole is interlaced.
2. cleaning equipment according to claim 1, which is characterized in that the baffle arrangement includes first baffle and second gear
Plate, the first baffle are set close to the cavity, and the second baffle is arranged between the first baffle and substrate, described
Multiple first spray orifices are provided on first baffle, multiple second spray orifices are provided on the second baffle, second spray orifice
Aperture is less than the aperture of first spray orifice.
3. cleaning equipment according to claim 2, which is characterized in that the aperture D1 of first spray orifice is 4mm~6mm,
The aperture D2 of second spray orifice is 2.5mm~5mm.
4. cleaning equipment according to claim 2, which is characterized in that the aperture of second spray orifice is first spray orifice
Aperture 1/3~2/3.
5. cleaning equipment according to claim 2, which is characterized in that the baffle arrangement further includes to make described first
First telecontrol equipment of baffle movement.
6. according to the cleaning equipment described in any one in claim 1-5, which is characterized in that the baffle arrangement further includes
Three baffles, the third baffle are arranged between the second baffle and substrate, and multiple thirds are provided in the third baffle
Spray orifice, the aperture of the third spray orifice are less than the aperture of second spray orifice.
7. cleaning equipment according to claim 6, which is characterized in that the aperture of the third spray orifice for 0.5mm~
2.5mm。
8. cleaning equipment according to claim 6, which is characterized in that the aperture of the third spray orifice is second spray orifice
Aperture 1/3~2/3.
9. cleaning equipment according to claim 6, which is characterized in that the cleaning equipment further includes to make described second
Second telecontrol equipment of baffle movement.
10. cleaning equipment according to claim 1, which is characterized in that the shape of spray orifice is round or polygon on baffle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810007057.2A CN108212949B (en) | 2018-01-03 | 2018-01-03 | Plasma cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810007057.2A CN108212949B (en) | 2018-01-03 | 2018-01-03 | Plasma cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108212949A true CN108212949A (en) | 2018-06-29 |
| CN108212949B CN108212949B (en) | 2020-12-29 |
Family
ID=62645267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810007057.2A Expired - Fee Related CN108212949B (en) | 2018-01-03 | 2018-01-03 | Plasma cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108212949B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638026A (en) * | 2004-01-07 | 2005-07-13 | 松下电器产业株式会社 | Substrate processing apparatus and cleaning method therefor |
| CN102931050A (en) * | 2011-08-10 | 2013-02-13 | 中国科学院微电子研究所 | Novel gas inlet mode of normal pressure plasma free radical cleaning spray gun |
| CN104916564A (en) * | 2014-03-13 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing device |
| CN204733444U (en) * | 2015-05-26 | 2015-10-28 | 山东专利工程总公司 | A kind of capacitive coupling plasma processing apparatus |
| CN106098548A (en) * | 2015-04-30 | 2016-11-09 | 吉恩株式会社 | For vapor phase etchant and the plasma device of cleaning |
-
2018
- 2018-01-03 CN CN201810007057.2A patent/CN108212949B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638026A (en) * | 2004-01-07 | 2005-07-13 | 松下电器产业株式会社 | Substrate processing apparatus and cleaning method therefor |
| CN102931050A (en) * | 2011-08-10 | 2013-02-13 | 中国科学院微电子研究所 | Novel gas inlet mode of normal pressure plasma free radical cleaning spray gun |
| CN104916564A (en) * | 2014-03-13 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing device |
| CN106098548A (en) * | 2015-04-30 | 2016-11-09 | 吉恩株式会社 | For vapor phase etchant and the plasma device of cleaning |
| CN204733444U (en) * | 2015-05-26 | 2015-10-28 | 山东专利工程总公司 | A kind of capacitive coupling plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108212949B (en) | 2020-12-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101676775A (en) | Spacer, liquid crystal display panel and distribution device and distribution method of spacer | |
| KR20120031117A (en) | Substrate processing apparatus | |
| CN108212949A (en) | A kind of plasma cleaning equipment | |
| JP5701551B2 (en) | Substrate processing equipment | |
| US9887112B2 (en) | Inkjet coating device and coating method | |
| CN112358194B (en) | Etching and thinning device and method for extremely-thin glass | |
| CN202705232U (en) | Air knife device | |
| JP5519319B2 (en) | Coating device | |
| JP2007232268A (en) | Pressure-reduced dryer and manufacturing process of coated object | |
| CN207941638U (en) | A kind of polyester resin production spray equipment | |
| KR101191996B1 (en) | Improved Spray-Type Pattern Forming Apparatus and Method | |
| US20030196689A1 (en) | Cleaning apparatus having fluid mixing nozzle for manufacturing flat-panel display | |
| JP2014131033A (en) | Method and device for processing wafer shape article | |
| CN106423730B (en) | Apparatus for coating and coating method | |
| DE102008062619B4 (en) | A microwave plasma source and method of forming a linearly elongated plasma at atmospheric pressure conditions | |
| KR101212815B1 (en) | Spray-type pattern forming apparatus and method using conductive linear mask | |
| KR100871343B1 (en) | Nozzle for rinsing substrate with two fluid mixture | |
| JP2006326560A (en) | Surface treatment device, surface treatment method, and surface-treated substrate | |
| KR101617347B1 (en) | Block type bubble jet nozzle | |
| CN107065243A (en) | A kind of method for improving introns distributing homogeneity | |
| JP2870834B2 (en) | Spraying method of spacer for liquid crystal panel | |
| KR20110012016A (en) | Two-liquids jetting device for cleaning flat panel display | |
| JP2003088789A (en) | Wet treatment device | |
| CN115125522A (en) | Film coating system | |
| TW202235696A (en) | Distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201229 |