CN108193169A - A kind of mask plate for preparing two-dimensional material metal electrode - Google Patents
A kind of mask plate for preparing two-dimensional material metal electrode Download PDFInfo
- Publication number
- CN108193169A CN108193169A CN201810181085.6A CN201810181085A CN108193169A CN 108193169 A CN108193169 A CN 108193169A CN 201810181085 A CN201810181085 A CN 201810181085A CN 108193169 A CN108193169 A CN 108193169A
- Authority
- CN
- China
- Prior art keywords
- copper mesh
- silicon chip
- silicon
- mask plate
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Abstract
The invention discloses a kind of mask plates for preparing two-dimensional material metal electrode, and including silicon chip frame and copper mesh, the silicon chip frame is overlapped by two panels square silicon wafer and two strip silicon chips in " mouth " font, and overlapping part is by conductive glue bond；Copper mesh is covered on the silicon chip of two strips of silicon chip frame, the overlapping part of copper mesh and two strip silicon chips forms copper mesh mask plate with adhered by double sided plaster, during use, the alignment of copper mesh and nano material sample is realized with alignment tool, is finally completed the preparation two-dimensional material metal electrode on nano material sample.The present invention, which has, prepares the advantages of precision is high, preparation efficiency is high, stability is good, sturdy and durable and simple for production, of low cost.
Description
Technical field
The present invention relates to two-dimensional material metal electrode preparing technical field, especially a kind of copper mesh that is based on is in nano material sample
The mask plate of two-dimensional material metal electrode is prepared on product.
Background technology
In recent years, have been devoted to every superiority Quality Research of various two-dimensional layer materials, two-dimensional layer material by
In with excellent carrier mobility and huge specific surface area, have in electronic device, energy storage material etc. good
Application prospect.The mask plate growth metal electrode method of the prior art is grown based on metal mask version and silicon substrate mask plate
The method of metal electrode, the method for obtaining two-dimensional layer material metal electrode at present are initiated by metal mask version being covered in thin
Membrane material surface simultaneously exposes the mask vapour deposition method that electrode pattern portion prepares metal electrode --- by being sticked in film surface
Metal mask version simultaneously exposes electrode pattern portion, by obtaining metal electrode in exposed electrode pattern portion deposited metal.It deposits
The problem of be, since there are the size of two-dimensional layer material is smaller, metal mask version is being used to prepare two-dimensional layer material gold
It is difficult to be aligned with two-dimensional layer material when belonging to electrode, geometry can not be realized with two-dimensional layer material by finally resulting in metal electrode
On connection, constrain the research to two-dimensional layer material and application.Because many such as electricity, photoelectricity of two-dimensional layer material
Etc. properties be required for detect based on the two-dimensional material device for having connected electrode, so two-dimensional layer material can be prepared in high precision
The metal electrode of material is particularly important.He Jun et al. is covered as mask plate in two-dimensional layer under an optical microscope using copper mesh
Material surface, adjusts to realize manually and prepares metal electrode by using tweezers, however, this kind of method exists not due to process conditions
Certainty and poor controllability cause alignment procedures quite time-consuming, and since mask plate is difficult to connect with two-dimensional layer material tight
It touches and metal electrode spacing is caused to be difficult to ensure, influence the efficiency of device preparation and the stability of quality.Silicon substrate mask plate precision
1 micron is can reach, combined high precision uses Barebone, can be the two-dimensional layer material preparation metal electricity of as low as 10 microns of size
Pole, but the mask plate is at high price and extremely fragile, there is very high proficiency requirement to its operator.To effectively push pair
The research and application of two-dimensional layer material make high-precision, mask prepared by cheap, efficient two-dimensional layer material metal electrode
Version device is particularly important.
Invention content
The purpose of the present invention is in view of the deficiencies of the prior art and what is provided a kind of prepare covering for two-dimensional material metal electrode
Film version, the present invention includes silicon chip frame and copper mesh, by being fixed on copper mesh on the frame built by silicon chip, so as to form copper mesh
Mask plate has and prepares the advantages of precision is high, preparation efficiency is high, stability is good, sturdy and durable and simple for production, of low cost.
Realizing the specific technical solution of the object of the invention is：
A kind of mask plate for preparing two-dimensional material metal electrode, feature include silicon chip frame and copper mesh, the silicon chip frame by
The symmetrically arranged square silicon wafer of two panels and two strip silicon chips being arranged in parallel overlap, and overlapping part is by leading in " mouth " font
Electric glue bond；
The copper mesh is the disk that copper mesh is cut, and copper mesh is covered on the silicon chip of two strips of silicon chip frame, and copper mesh
The center of circle is overlapped with the geometric center of silicon chip frame, the overlapping part adhered by double sided plaster of copper mesh and two strip silicon chips.
The present invention includes silicon chip frame and copper mesh, by being fixed on copper mesh on the frame built by silicon chip, so as to be formed
Copper mesh mask plate, with preparing, precision is high, preparation efficiency is high, stability is good, sturdy and durable and simple for production, low-cost
Advantage.
Description of the drawings
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is mask plate use state diagram of the present invention.
Specific embodiment
Refering to Fig. 1, the present invention includes silicon chip frame 1 and copper mesh 2, and the silicon chip frame 1 is symmetrically arranged rectangular by two panels
Silicon chip and two strip silicon chips being arranged in parallel overlap, and overlapping part is by conductive glue bond in " mouth " font；
The copper mesh 2 is the disk that copper mesh is cut, and copper mesh 2 is covered on the silicon chip of 1 two strips of silicon chip frame, and copper mesh
2 center of circle is overlapped with the geometric center of silicon chip frame 1, the overlapping part adhered by double sided plaster of copper mesh 2 and two strip silicon chips.
Embodiment 1
A, the making of mask plate
Refering to Fig. 1, silicon chip is chosen, thickness is 0.5 mm；Cut square silicon wafer：8×8mm；Cut strip silicon chip：22×3
mm；Two strip silicon chips are arranged in parallel to, two panels square silicon wafer left and right settings between two strip silicon chips of holding up and down
Spacing for 2mm, and with two panels square silicon wafer in " mouth " font overlap joint；Wherein, the spacing between two strip silicon chips is kept
For 2mm, the lap of splice for keeping strip silicon chip and square silicon wafer is 2~2.5mm；Overlapping part is made of conductive glue bond
Silicon chip frame 1.
The copper mesh of 300 mesh is chosen, copper mesh 2 is covered on the silicon chip of 1 two strips of silicon chip frame, makes copper mesh 2
The center of circle is overlapped with the geometric center of silicon chip frame 1, the overlapping part adhered by double sided plaster of copper mesh 2 and two strip silicon chips, is used
The residual gum on 2 periphery of glue-dispenser erasing copper mesh, prevents remnants glue stains nano material sample, mask plate when preparing metal electrode
Complete.
B, gold electrode is prepared on tantalum disulfide sample
Alignment tool is chosen, completes the operation that mask plate is aligned with tantalum disulfide sample, detailed process is as follows：
Refering to Fig. 1, Fig. 2, by mask plate copper mesh 2 obtained downward, one end square silicon wafer is clamped on the lifting folder of alignment tool,
Silicon substrate 3 with tantalum disulfide sample is fixed on conducting resinl on the table top of alignment tool；It moves horizontally under the microscope pair
Quasi- platform vertically moves the lifting folder of alignment tool, ensures that an at least grid lines is aligned with tantalum disulfide sample 3 on copper mesh 2, then
The secondary lifting folder for vertically moving alignment tool, until the copper mesh 2 of mask plate is touched with the tantalum disulfide sample 3 on alignment tool.
Electron beam evaporation equipment is chosen, electrode evaporation is carried out to tantalum disulfide sample 3, detailed process is as follows：
By alignment tool together with mask plate and the silicon substrate with tantalum disulfide 3 is put into togerther in electron beam evaporation equipment, growth is thick
The gold electrode for 40 nanometers is spent, the golden speed of growth is 0.2 nm/sec；Complete gold on the silicon substrate 3 with tantalum disulfide sample
Belong to the preparation of electrode.
The alignment tool for completing vapor deposition together with mask plate and silicon substrate 3 from electron beam evaporation equipment is taken out, is loosened
Mask plate from lifting folder is taken out, removes silicon substrate with blade, the silicon substrate 3 on alignment tool is taken by the lifting folder of alignment tool
Go out, obtain the two-dimensional material sample for preparing and completing metal electrode.
Embodiment 2
A, the making of mask plate
Refering to Fig. 1, silicon chip is chosen, thickness is 0.5 mm；Cut square silicon wafer：8 ×8mm；Cut strip silicon chip：22 ×
3mm；By two panels square silicon wafer left and right settings, two strip silicon chips be arranged in parallel up and down, keep two strip silicon chips it
Between spacing for 2mm, and with two panels square silicon wafer in " mouth " font overlap joint；Wherein, between keeping between two strip silicon chips
Away from for 2mm, the lap of splice for keeping strip silicon chip and square silicon wafer is 2~2.5mm；The conductive glue bond system of overlapping part
Into silicon chip frame 1.
The copper mesh of 300 mesh is chosen, copper mesh 2 is covered on the silicon chip of 1 two strips of silicon chip frame, makes copper mesh 2
The center of circle is overlapped with the geometric center of silicon chip frame 1, the overlapping part adhered by double sided plaster of copper mesh 2 and two strip silicon chips, is used
The residual gum on 2 periphery of glue-dispenser erasing copper mesh, prevents remnants glue stains nano material sample, mask plate when preparing metal electrode
Complete.
B, cr-au electrode is prepared on two selenizing vanadium samples
Alignment tool is chosen, completes the operation that mask plate is aligned with two selenizing vanadium samples, detailed process is as follows：
Refering to Fig. 1, Fig. 2, by mask plate copper mesh 2 obtained downward, one end square silicon wafer is clamped on the lifting folder of alignment tool,
Silicon substrate 3 with two selenizing vanadium is fixed on conducting resinl on the table top of alignment tool；Alignment tool is moved horizontally under the microscope,
The lifting folder of alignment tool is vertically moved, ensures that an at least grid lines is aligned with two selenizing vanadium on silicon substrate 3 on copper mesh 2,
The lifting folder of alignment tool is vertically moved again, until the copper mesh 2 of mask plate is touched with two selenizing vanadium on the silicon substrate 3 on alignment tool
And.
Electron beam evaporation equipment is chosen, electrode evaporation is carried out to two selenizing vanadium on silicon substrate 3, detailed process is as follows：
By alignment tool together with mask plate and the silicon substrate 3 with two selenizing vanadium is put into togerther in electron beam evaporation equipment, growth is thick
The chromium electrode and thickness spent for 5 nanometers are 40 nanometers of gold electrode；The speed of growth of gold is 0.2 nm/sec；The speed of growth of chromium
For 0.1 nm/sec；Complete the preparation in the metal electrode of two selenizing vanadium samples.
By complete vapor deposition alignment tool is together with mask plate and the silicon substrate 3 with two selenizing vanadium is set from electron beam evaporation
Standby middle taking-up loosens the lifting folder of alignment tool, and mask plate from lifting folder is taken out, silicon substrate is removed with blade, by alignment tool
On silicon substrate 3 take out, obtain prepare complete metal electrode two-dimensional material sample.
Claims (1)
1. a kind of mask plate for preparing two-dimensional material metal electrode, which is characterized in that it includes silicon chip frame（1）And copper mesh（2）,
The silicon chip frame（1）The strip silicon chip being arranged in parallel by the symmetrically arranged square silicon wafer of two panels with two is taken in " mouth " font
It connects, and overlapping part is by conductive glue bond；
The copper mesh（2）For the disk that copper mesh is cut, copper mesh（2）It is covered in silicon chip frame（1）On the silicon chip of two strips,
And copper mesh（2）The center of circle and silicon chip frame（1）Geometric center overlap, copper mesh（2）With the overlapping part of two strip silicon chips
Use adhered by double sided plaster.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810181085.6A CN108193169A (en) | 2018-03-06 | 2018-03-06 | A kind of mask plate for preparing two-dimensional material metal electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810181085.6A CN108193169A (en) | 2018-03-06 | 2018-03-06 | A kind of mask plate for preparing two-dimensional material metal electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108193169A true CN108193169A (en) | 2018-06-22 |
Family
ID=62594574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810181085.6A Pending CN108193169A (en) | 2018-03-06 | 2018-03-06 | A kind of mask plate for preparing two-dimensional material metal electrode |
Country Status (1)
| Country | Link |
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| CN (1) | CN108193169A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065493A (en) * | 2018-09-10 | 2018-12-21 | 复旦大学 | A kind of device for assisting hard vias masks version and sample to be precisely aligned |
| CN109254025A (en) * | 2018-11-02 | 2019-01-22 | 内蒙古工业大学 | A kind of device and method for pasting annular support grid for transmission electron microscope sample |
| CN110676332A (en) * | 2019-09-12 | 2020-01-10 | 西安工业大学 | Flexible photoelectric detector based on layered transition metal sulfide and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101798670A (en) * | 2009-02-05 | 2010-08-11 | 三星移动显示器株式会社 | Mask assembly and being used to uses the depositing device of the flat-panel monitor of this mask assembly |
| CN208023080U (en) * | 2018-03-06 | 2018-10-30 | 华东师范大学 | A kind of mask plate preparing two-dimensional material metal electrode |
-
2018
- 2018-03-06 CN CN201810181085.6A patent/CN108193169A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101798670A (en) * | 2009-02-05 | 2010-08-11 | 三星移动显示器株式会社 | Mask assembly and being used to uses the depositing device of the flat-panel monitor of this mask assembly |
| CN208023080U (en) * | 2018-03-06 | 2018-10-30 | 华东师范大学 | A kind of mask plate preparing two-dimensional material metal electrode |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065493A (en) * | 2018-09-10 | 2018-12-21 | 复旦大学 | A kind of device for assisting hard vias masks version and sample to be precisely aligned |
| CN109065493B (en) * | 2018-09-10 | 2023-09-05 | 复旦大学 | Device for assisting hard through hole mask plate and sample to accurately align |
| CN109254025A (en) * | 2018-11-02 | 2019-01-22 | 内蒙古工业大学 | A kind of device and method for pasting annular support grid for transmission electron microscope sample |
| CN109254025B (en) * | 2018-11-02 | 2023-09-22 | 内蒙古工业大学 | Device and method for sticking annular carrier net to transmission electron microscope sample |
| CN110676332A (en) * | 2019-09-12 | 2020-01-10 | 西安工业大学 | Flexible photoelectric detector based on layered transition metal sulfide and preparation method thereof |
| CN110676332B (en) * | 2019-09-12 | 2021-07-02 | 西安工业大学 | Flexible photoelectric detector based on layered transition metal sulfide and preparation method thereof |
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