CN105036118A - Cu/graphene delamination method based on femtosecond laser technology - Google Patents
Cu/graphene delamination method based on femtosecond laser technology Download PDFInfo
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- CN105036118A CN105036118A CN201510359627.0A CN201510359627A CN105036118A CN 105036118 A CN105036118 A CN 105036118A CN 201510359627 A CN201510359627 A CN 201510359627A CN 105036118 A CN105036118 A CN 105036118A
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Abstract
The invention discloses a Cu/graphene delamination method based on the femtosecond laser technology, and belongs to the field of graphene preparation. The method comprises the following steps: (1) growing graphene on a copper foil; (2) bonding a transparent target substrate on graphene prepared in the step (1) to form transparent target substrate/graphene/Cu; (3) conducting scanning irradiation on one side of the upper surface of the transparent target substrate by adopting femtosecond laser, and removing the copper foil so as to obtain the graphene/transparent target substrate. The method has the advantages that the precision and the efficiency of laser delamination are improved; as a cold machining manner, the temperature of the graphene layer is uniform and small in change before and after femtosecond laser irradiation, the thermal stress of graphene and carrier substrate is effectively reduced, and the delamination quality is improved.
Description
Technical field
The present invention relates to field of preparation of graphene, be specifically related to a kind of Cu/ Graphene stripping means based on femtosecond laser technology.
Background technology
Graphene (Graphene) was produced successfully so far since first time in 2004, received and paid close attention to widely.Graphene has very special performance: (1) single-layer graphene thickness is 0.335nm, and graphene film is nanometer scale; (2) Graphene has Young's modulus (about 1000GPa) and the breaking tenacity (130GPa of superelevation, it is 100-200 times of steel), highly stable structure, (rate of migration of current carrier is high, can reach 15000cm respectively under room temperature, liquid nitrogen temperature for very strong electroconductibility
2v
-1s
-1and 60000cm
2v
-1s
-1); (3) graphene film in the stable adhesion of silica sphere, and can have not penetrability; (4) the extremely low (resistivity only about 10 of Graphene resistivity
-8Ω m, also lower than common metal).Because Graphene thickness is very little, during preparation, need the materials such as Cu paper tinsel as substrate, and then just can be obtained by Cu and Graphene isolation technique or substrate transfer technology.But the substrate of such as Cu and so on often has the surfaceness of hundreds of nanometer, surface microstructure indention shape, make the bonding interface of Graphene and Cu become very complicated, segregation ratio is more difficult.Common separation method has mechanical phonograph recorder separation, etched substrate partition method, but, the yield of mechanical phonograph recorder separation generally only has 10%-20%, although the yield of etched substrate partition method can reach 80%-90%, but the cost of this partition method is very high, the time is longer, the graphenic surface of acquisition is often more coarse.
Femtosecond laser is a kind of with the laser of impulse form running, and the time length only has several femtosecond (10
-15second), the most short pulse that Billy electronically obtains wants short several thousand times, within its focal diameter can reach 1um, within working accuracy can reach 100nm.When adopting femtosecond laser to carry out micro Process, material even just can not direct gasification through heat transfer process, and this function can be used for drying to extra small space, surface or body the generation that prevents from being adhered.Femtosecond laser can produce coulomb blast, fundamentally avoids existence and the impact of thermodiffusion, can as a kind of " cold " processing mode, processing effect and quality splendid.But be not also applied in Graphene stripping aspect at present.
Summary of the invention
The defect that the present invention is directed to that the efficiency existed in the method for existing laser lift-off Cu/ Graphene is low, yield is low etc., in conjunction with femtosecond laser technology, provides a kind of Cu/ Graphene stripping means based on femtosecond laser technology.
Object of the present invention is achieved through the following technical solutions:
Based on a Cu/ Graphene stripping means for femtosecond laser technology, comprise the steps:
(1) growing graphene on Copper Foil;
(2), on the Graphene prepared in step (1) by transparent objects substrate bonding, transparent objects substrate/Graphene/Gu is formed;
(3) adopt femtosecond laser from transparent objects substrate top surface while carry out scanning and irradiation, remove Copper Foil, obtain Graphene/transparent objects substrate.
Aforesaid method also comprises the steps: that the Graphene/transparent objects substrate to prepared by step (3) carries out clean.
The thickness of described Copper Foil is 10-200um magnitude.
The method of described growing graphene is chemical vapour deposition or plasma enhanced chemical vapor deposition.
The number of plies of described graphene layer is individual layer.
The number of plies of described Graphene is no less than 2 layers.
Described bonding is bonding bonding or Direct Bonding.
The material of described transparent objects substrate is PMMA, SiN, SiO
2, silica glass or GaN.
The interfacial layer between Copper Foil and Graphene is focused on during described Gold Films Irradiated by Femtosecond Laser.
The present invention is based on the target devices in the Cu/ Graphene stripping means of femtosecond laser technology, comprise Copper Foil, Graphene and target substrate, it is characterized in that:
Described Copper Foil is mainly used in the substrate as growing graphene layer, and thickness is 10-200um magnitude; Described graphene film is by CVD(chemical vapour deposition) or plasma enhanced chemical vapor deposition (PECVD) technology be prepared on Copper Foil substrate, be generally individual layer; Described target substrate, as the carrier substrates of transfer Graphene, can be PMMA, SiN, SiO
2deng transparent material.
Technical process based on the Cu/ Graphene stripping means of femtosecond laser technology is:
(1) on Copper Foil, one or more layers Graphene is grown;
(2) target substrate and Graphene bonding are formed a three-decker;
(3) use femtosecond laser to carry out scanning radiation from device edge, remove Copper Foil.
The present invention proposes the Cu/ Graphene stripping means based on femtosecond laser technology, comprise Copper Foil, Graphene and target substrate, when peeling off Copper Foil, employing femtosecond laser and carrying out removing Copper Foil after irradiation among a small circle to Copper Foil and Graphene interface.The stripping means of the Cu/ Graphene based on femtosecond laser technology that the present invention proposes, can improve precision and the efficiency of laser lift-off; As a kind of cold working mode, before and after Gold Films Irradiated by Femtosecond Laser graphene layer homogeneous temperature and change is little, effectively reduce the thermal stresses of Graphene and carrier substrates, improve the quality of stripping.
A kind of Cu/ Graphene stripping means based on femtosecond laser technology, described Copper Foil and graphene device, at least comprise Copper Foil, Graphene and target substrate, described graphene growth is on Copper Foil, and to be bonded together the three-decker of formation target substrate/Graphene/Copper Foil with target substrate, the stripping of Copper Foil uses femtosecond laser to carry out irradiation.
The interfacial layer focused between Copper Foil and Graphene is needed during described Gold Films Irradiated by Femtosecond Laser;
Described Graphene grows on Copper Foil by CVD or PECVD mode;
Described Gold Films Irradiated by Femtosecond Laser can from any edge of device;
Also comprise being separated the Graphene that obtains and target substrate carries out clean;
The most I machining feature size of described femtosecond laser is within 1um, and precision is within 100nm.
The stripping means of the Cu/ Graphene based on femtosecond laser technology that the present invention proposes, can improve precision and the efficiency of laser lift-off; As a kind of cold working mode, before and after Gold Films Irradiated by Femtosecond Laser graphene layer homogeneous temperature and change is little, effectively reduce the thermal stresses of Graphene and carrier substrates, improve the quality of stripping.
Accompanying drawing explanation
Fig. 1 is the process flow sheet of the Cu/ Graphene stripping means based on femtosecond laser technology of the present invention.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, describe further the present invention is real, obviously, described embodiment is one embodiment of the present of invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
Fig. 1 is the process flow sheet of the Cu/ Graphene stripping means based on femtosecond laser technology.CVD technology is used on the Copper Foil 102 of surface treated 200um thickness, to deposit a layer graphene 101, as shown in Fig. 1 (a); Target substrate (PMMA material) 103 is carried out bonding bonding with Graphene 101, obtains the three-decker 110 of Cu/ Graphene/target substrate, as shown in Fig. 1 (b); Adjustment femtosecond laser beam 103 spot size, and through transparent target substrate, (object using femtosecond laser is at interfacial layer by laser focusing, copper is light tight, do not go so laser enters, therefore must from transparent material irradiate enter just can) focus on the interface of Graphene 101 and Copper Foil 102, from the edge of three-decker 110, scanning carries out laser irradiation until complete, and can get rid of Copper Foil, as shown in Fig. 1 (c); Be the Graphene after stripping and target substrate as shown in Figure 1 (d) shows.
Identical technique effect can be obtained with the PMMA in silica glass or GaN alternate embodiment 1.
Embodiment 2
PECVD technology is used to deposit a layer graphene 101 on the thick Copper Foil 102 of surface treated 10um; By target substrate, (its material is SiO
2) 103 with Graphene 101 carry out Direct Bonding, obtain the three-decker 110 of Cu/ Graphene/target substrate; Adjustment femtosecond laser beam 103 spot size, and through transparent target substrate, (object using femtosecond laser is at interfacial layer by laser focusing, copper is light tight, do not go so laser enters, therefore must from transparent material irradiate enter just can) focus on the interface of Graphene 101 and Copper Foil 102, from the edge of three-decker 110, scanning carries out laser irradiation until complete, and can get rid of Copper Foil, obtains the Graphene after peeling off and target substrate.
Embodiment 3
The thickness of Copper Foil is 100um as different from Example 1, and the material of transparent objects substrate is SiN.
Last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of embodiment of the present invention technical scheme.
Claims (9)
1., based on a Cu/ Graphene stripping means for femtosecond laser technology, it is characterized in that comprising the steps:
(1) growing graphene on Copper Foil;
(2), on the Graphene prepared in step (1) by transparent objects substrate bonding, transparent objects substrate/Graphene/Gu is formed;
(3) adopt femtosecond laser from transparent objects substrate top surface while carry out scanning and irradiation, remove Copper Foil, obtain Graphene/transparent objects substrate.
2. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 1, is characterized in that: also comprise the steps: that the Graphene/transparent objects substrate to prepared by step (3) carries out clean.
3. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 1 or 2, is characterized in that: the thickness of described Copper Foil is 10-200um magnitude.
4. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 1 or 2, is characterized in that: the method for described growing graphene is chemical vapour deposition or plasma enhanced chemical vapor deposition.
5. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 4, is characterized in that: the number of plies of described graphene layer is individual layer.
6. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 4, is characterized in that: the number of plies of described Graphene is no less than 2 layers.
7. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 1 or 2 or 5 or 6, is characterized in that: described bonding is bonding bonding or Direct Bonding.
8. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 1 or 2 or 5 or 6, is characterized in that: the material of described transparent objects substrate is PMMA, SiN, SiO
2, silica glass or GaN.
9. a kind of Cu/ Graphene stripping means based on femtosecond laser technology according to claim 1 or 2 or 5 or 6, is characterized in that: focus on the interfacial layer between Copper Foil and Graphene during described Gold Films Irradiated by Femtosecond Laser.
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Cited By (5)
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| CN107298439A (en) * | 2017-06-14 | 2017-10-27 | 成都新柯力化工科技有限公司 | A kind of method that utilization femtosecond laser prepares graphene film |
| CN108640104A (en) * | 2018-07-17 | 2018-10-12 | 西安交通大学 | A method of inducing superior graphite alkene network structure using femtosecond pulse |
| CN110773748A (en) * | 2019-10-29 | 2020-02-11 | 清华大学 | Silver shell stripping method and system for gold-silver core-shell nanospheres based on femtosecond laser |
| CN112935709A (en) * | 2021-01-21 | 2021-06-11 | 武汉大学 | Femtosecond laser processing method and system for polymer spherical crown in double-cone collision ignition |
| CN114334482A (en) * | 2021-06-15 | 2022-04-12 | 清华大学 | Device manufacturing method, energy storage device and energy supply device |
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| CN107298439A (en) * | 2017-06-14 | 2017-10-27 | 成都新柯力化工科技有限公司 | A kind of method that utilization femtosecond laser prepares graphene film |
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| CN112935709A (en) * | 2021-01-21 | 2021-06-11 | 武汉大学 | Femtosecond laser processing method and system for polymer spherical crown in double-cone collision ignition |
| CN112935709B (en) * | 2021-01-21 | 2022-05-24 | 武汉大学 | Femtosecond laser processing method and system for polymer spherical crown in double-cone collision ignition |
| CN114334482A (en) * | 2021-06-15 | 2022-04-12 | 清华大学 | Device manufacturing method, energy storage device and energy supply device |
| CN114334482B (en) * | 2021-06-15 | 2023-08-25 | 清华大学 | Device manufacturing method, energy storage device and energy supply device |
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Effective date of registration: 20220111 Address after: 430075 No. 2, floor 3, building 12, zone B, high tech medical device Park, No. 818, Gaoxin Avenue, Donghu New Technology Development Zone, Wuhan, Hubei (Wuhan area of free trade zone) Patentee after: WUHAN FINE MEMS Inc. Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Patentee before: WUHAN University Patentee before: Wuhan feien Microelectronics Co., Ltd |
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