CN109530936A - A kind of method and device laser machining wafer - Google Patents
A kind of method and device laser machining wafer Download PDFInfo
- Publication number
- CN109530936A CN109530936A CN201811607512.9A CN201811607512A CN109530936A CN 109530936 A CN109530936 A CN 109530936A CN 201811607512 A CN201811607512 A CN 201811607512A CN 109530936 A CN109530936 A CN 109530936A
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- array
- wafer
- hot spot
- predetermined pattern
- burst point
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Abstract
The present invention provides a kind of method and device for laser machining wafer, which comprises by laser beam shaping is the hot spot combination array with predetermined pattern, and is listed in inside wafer predeterminable area by the light spot group combined array with predetermined pattern and forms sheet burst point；Sheet burst point uniform fold is simultaneously formed leveling face burst point by the mobile workbench for placing wafer in wafer preset plane；Tangential pulling force is applied to wafer both ends along the preset plane for being formed with leveling face burst point, so as to which wafer is separated.The present invention, which can match the best hot spot combination array with predetermined pattern for third generation semiconductor material characteristic and then pass through laser, realizes the separation to semiconductor substrate in inside wafer effect, so that laser lift-off ratio is greater than 1:10；Processing efficiency can also be effectively promoted, the yields of third generation semiconductor substrate separation is improved.
Description
Technical field
The present invention relates to laser micro-machining technology field more particularly to a kind of method and devices for laser machining wafer.
Background technique
The progress of ic manufacturing technology is first derived from the requirement of the market demand, the requirement followed by competed.Collecting
In manufacturing at circuit, for semiconductor silicon material since its is resourceful, manufacturing cost is low, good manufacturability, is that integrated circuit is important
Basis material.From the point of view of integrated circuit section structure, most of integrated circuit is manufactured in the superficial surface layer of silicon substrate material.
Due to the requirement of manufacturing process, the dimensional accuracy of chip, geometric accuracy, surface cleanliness and surface crystallites lattice structure are proposed
Very high request.Therefore in several hundred road process flows, relatively thin chip not can be used, it can only be using certain thickness chip in work
It is transmitted during skill, flow.Usually before integrated antenna package, the basis material extra to back surface of the wafer is needed to remove centainly
Thickness.This technical process is referred to as back surface of the wafer reduction process.
Currently, semiconductor substrate separation usually there are two types of application, one kind for using laser action between different materials, and
It is different based on absorptivity of the different materials for laser, different materials are separated by laser to realize；Another kind is
For same substrate material, the mode of substrate wire cutting is first cut using laser, then grinds attenuated layer specific thicknesses.
Method one kind of two kinds of mainstreams is only suitable only for the separation between various substrates, is not suitable for being thinned for third generation semiconductor material, and
Second of processing method extremely wastes material, and process of lapping is cumbersome time-consuming, when chip thinning to certain thickness, is also easy to out
Existing whole wafer generates biggish curvature, or even up to several cm thicks, the chip cutting after being unfavorable for.
Summary of the invention
The method and device of laser processing wafer provided by the invention, can match for third generation semiconductor material characteristic
Most preferably then the hot spot combination array with predetermined pattern passes through laser in inside wafer effect realization to semiconductor substrate out
Separation, so that laser lift-off ratio is greater than 1:10；Processing efficiency can also be effectively promoted, third generation semiconductor substrate point is improved
From yields.
In a first aspect, the present invention provides a kind of method for laser machining wafer, comprising:
It is the hot spot combination array with predetermined pattern by laser beam shaping, and is combined by the hot spot with predetermined pattern
Array forms sheet burst point in inside wafer predeterminable area；
The mobile workbench for placing wafer and that sheet burst point uniform fold is formed to leveling face in wafer preset plane is quick-fried
Point；
Tangential pulling force is applied to wafer both ends along the preset plane for being formed with leveling face burst point, so as to which wafer is divided
From.
Optionally, which comprises
Obtain semiconductor material information；Wherein, the semiconductor material information include material type, material ablation mechanism,
One or any combination in material lattice, material crystal orientation；
The hot spot combination array of predetermined pattern is determined according to the semiconductor material information；Wherein, the semiconductor material
Information is corresponding with the hot spot combination array of predetermined pattern.
Optionally, the hot spot combination array of the predetermined pattern includes square structure array, diamond structure array, shape changeable
Array of structures, trapezium structure array, reticular structure array, one or any combination in fringe-like structures array；Wherein,
The laser facula includes Gaussian spot, rectangular flat-top hot spot, circular flat hot spot, oval flat-top hot spot, diamond shape
One or any combination in flat-top hot spot.
Optionally, described by laser beam shaping is the hot spot combination array with predetermined pattern, and by having default figure
The light spot group combined array of case is listed in inside wafer predeterminable area and is formed before sheet burst point, the method also includes:
The action direction between laser beam polarization and material lattice is adjusted, so as to be combined by the hot spot with predetermined pattern
Array carries out lateral burst point in inside wafer predeterminable area and forms sheet burst point.
Optionally, the wave-length coverage of the laser beam is 150nm-2000nm.
Optionally, the sphere of action of the single burst point is 0.5 micron -100 microns.
Second aspect, the present invention provide a kind of device for laser machining wafer, comprising:
Laser-processing system is built the laser beam formed and for emitting laser by laser, shaping element and passed through
Shaping element is shaped as the hot spot combination array with predetermined pattern, is then listed in crystalline substance by the light spot group combined array with predetermined pattern
Circle internal preset region forms sheet burst point；
Workbench, for the mobile workbench for placing wafer and by sheet burst point uniform fold in wafer preset plane shape
At leveling face burst point；
Separation system, for applying tangential pulling force to wafer both ends along the preset plane for being formed with leveling face burst point, so that
Wafer is separated.
Optionally, described device further include:
Control system determines predetermined pattern for obtaining semiconductor material information, and according to the semiconductor material information
Hot spot combination array；
Preferably, the semiconductor material information includes material type, material ablation mechanism, material lattice, material crystal orientation
In one or any combination；
Preferably, the semiconductor material information is corresponding with the hot spot combination array of predetermined pattern.
Optionally, the hot spot combination array of the predetermined pattern includes square structure array, diamond structure array, shape changeable
Array of structures, trapezium structure array, reticular structure array, one or any combination in fringe-like structures array；Wherein,
The laser facula includes Gaussian spot, rectangular flat-top hot spot, circular flat hot spot, oval flat-top hot spot, diamond shape
One or any combination in flat-top hot spot.
Optionally, described device further include:
Adjustment system, for adjusting the action direction between laser beam polarization and material lattice, so that default by having
The light spot group combined array of pattern is listed in inside wafer predeterminable area and carries out lateral burst point formation sheet burst point.
The method and device of laser processing wafer provided in an embodiment of the present invention, the method are mainly utilized with gallium nitride
(GaN) and the broad stopbands such as silicon carbide (SiC), zinc oxide (ZnO) be representative third generation semiconductor material characteristic, by matching
The corresponding light spot group combined array with predetermined pattern is listed in inside wafer predeterminable area and forms sheet burst point, by sheet burst point
Whole uniform folds form leveling face burst point in wafer preset plane in wafer preset plane, then two above and below wafer
Surface applies tangential pulling force to wafer both ends along the preset plane for being formed with leveling face burst point using separation system, so that by wafer
It carries out separation and realizes semiconductor substrate separation；Wherein, it is described will be uniformly arranged the sucker of small suction nozzle as separation system so that its
Tangential pulling force can uniformly be applied to crystal column surface, therefore, the present embodiment the method can be directed to third generation semiconductor material
Characteristics match goes out the best hot spot combination array with predetermined pattern and then passes through laser will partly lead in inside wafer effect realization
Body substrate is separated into multi-disc, so that laser lift-off ratio is greater than 1:10；Processing efficiency can also be effectively promoted, the third generation is improved
The yields of semiconductor substrate separation；It can utmostly guarantee wafer in wafer whole picture face pulling force effect using separation system simultaneously
Integrality.
Detailed description of the invention
Fig. 1 is the flow chart for the method that one embodiment of the invention laser machines wafer；
Fig. 2 is the schematic diagram of another embodiment of the present invention wafer laser removing；
Fig. 3 is that another embodiment of the present invention applies the schematic diagram that tangential pulling force is separated to wafer both ends；
Fig. 4 is the structural schematic diagram of the hot spot combination array of another embodiment of the present invention predetermined pattern；
Fig. 5 is the structural schematic diagram of another embodiment of the present invention sucker；
Fig. 6 is the schematic diagram of another embodiment of the present invention P polarization；
Fig. 7 is the schematic diagram of another embodiment of the present invention S-polarization.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of method for laser machining wafer, as shown in Figure 1, which comprises
It S11, by laser beam shaping is the hot spot combination array with predetermined pattern, and by the hot spot with predetermined pattern
Combination array forms sheet burst point in inside wafer predeterminable area；
Sheet burst point uniform fold is simultaneously formed leveling by S12, the mobile workbench for placing wafer in wafer preset plane
Face burst point；
S13, tangential pulling force is applied to wafer both ends along the preset plane for being formed with leveling face burst point, so as to which wafer is carried out
Separation.
The method of laser processing wafer provided in an embodiment of the present invention is mainly utilized with gallium nitride (GaN) and silicon carbide
(SiC), the broad stopbands such as zinc oxide (ZnO) are the third generation semiconductor material characteristic of representative, by matching corresponding tool
There is the light spot group combined array of predetermined pattern to be listed in inside wafer predeterminable area and forms sheet burst point, sheet burst point is default flat in wafer
Whole uniform folds form leveling face burst point in wafer preset plane on face, then use separation in wafer upper and lower surfaces
System applies tangential pulling force to wafer both ends along the preset plane for being formed with leveling face burst point, so as to which wafer is carried out separation realization
Semiconductor substrate separation；Wherein, described to allow it to the sucker for being uniformly arranged small suction nozzle as separation system to wafer table
Face uniformly applies tangential pulling force, and therefore, the present embodiment the method can match most for third generation semiconductor material characteristic
Then the good hot spot combination array with predetermined pattern passes through laser and is separated into semiconductor substrate in inside wafer effect realization
Multi-disc, so that laser lift-off ratio is greater than 1:10；Processing efficiency can also be effectively promoted, third generation semiconductor substrate point is improved
From yields；It can utmostly guarantee the integrality of wafer in wafer whole picture face pulling force effect using separation system simultaneously.
Optionally, as shown in Figures 2 to 7, which comprises
Obtain semiconductor material information；Wherein, the semiconductor material information include material type, material ablation mechanism,
One or any combination in material lattice, material crystal orientation；
The hot spot combination array of predetermined pattern is determined according to the semiconductor material information；Wherein, the semiconductor material
Information is corresponding with the hot spot combination array of predetermined pattern.
Optionally, the hot spot combination array of the predetermined pattern includes square structure array, diamond structure array, shape changeable
Array of structures, trapezium structure array, reticular structure array, one or any combination in fringe-like structures array；Wherein,
The laser facula includes Gaussian spot, rectangular flat-top hot spot, circular flat hot spot, oval flat-top hot spot, diamond shape
One or any combination in flat-top hot spot.
Optionally, described by laser beam shaping is the hot spot combination array with predetermined pattern, and by having default figure
The light spot group combined array of case is listed in inside wafer predeterminable area and is formed before sheet burst point, the method also includes:
The action direction between laser beam polarization and material lattice is adjusted, so as to be combined by the hot spot with predetermined pattern
Array carries out lateral burst point in inside wafer predeterminable area and forms sheet burst point.
Specifically, the polarization of laser beam described in the present embodiment the method refers to laser electric field strength in communication process
Vibration follow certain rule, i.e., if laser light field along straight line direction vibration if the laser be called linearly polarized light；Such as
The vibration of fruit electric field strength is known as elliptically polarized light along the laser that an elliptical orbit changes；If the track is a circle,
The laser is referred to as circularly polarized light.One of characteristic as laser, laser polarization have obvious action to material ablation, such as
Effect of the laser polarization state (including linear polarization, elliptical polarization and circular polarization) to material ablation mechanism, linearly polarized laser polarization side
To the relationship etc. between ablation pattern.
Therefore, for laser polarization state to material ablation mechanism, mainly since the initial free electrons of metal material are close
Spend it is high, so without ionizing to form free electron by atom, thus mostly for the research of laser polarization state mainly for
It is nonmetallic materials, including semiconductor and dielectric substance.Now by taking vitreous silica as an example, ionization process is main on vitreous silica
Including two stages of photon ionization and impact ionization.Photo-ionisation embodies the interaction of laser and material, and generated electronics is
Subsequent ionization by collision provides " seed electrons ", and Photoionization rate can pass through Wpi (I (t))=α (I (t))mIt calculates.Research
Show that laser polarization state is to achieve the purpose that controlled material ablation characteristics by regulating and controlling multiphoton ionization section factor.
Therefore, the present embodiment the method polarizes the action direction between material lattice by adjusting laser beam and improves
Semiconductor separating effect and yields.
In addition, as shown in figure 4, due to the material type or material ablation mechanism or material in the semiconductor material information
Material lattice or material crystal orientation are one of the influence factors of laser processing, and therefore, the present embodiment the method can also be according to described
Semiconductor material information determines the hot spot combination array of predetermined pattern, wherein the hot spot combination array for determining predetermined pattern includes
The light spot shape for determining the predetermined pattern and laser facula that hot spot combination array is presented, so that the hot spot of predetermined pattern combines
Array is matched with semiconductor material, optimizes semiconductor separating effect.For example, for the material crystal orientation dependence of laser processing
Processing, i.e., the described crystal orientation dependence processing refers in laser processing procedure, since the anisotropy of crystalline material itself causes
The process of significant changes can occur with the change of material crystal orientation for ablation result.It is different with tradition research, this ablation result
Caused by difference is not due to the variation of laser parameter and processing environment, but as caused by the characteristic of material itself.In order to
Material crystal orientation dependence ablation is elaborated, this part mainly passes through the crystal orientation dependence and ablation shape of crystalline material optical characteristics
Two aspects of crystal orientation dependence of looks are illustrated.
As shown in Figure 6 and Figure 7, with the development of material science, increasingly for the demand with sophisticated functionality material
It is more, such as there is the fiber waveguide device of P polarization and S-polarization simultaneously.Gradually, people start from prepare anisotropic material turn
To research crystalline material itself so in the anisotropy having, for example, detection crystalline material thoroughly/reflectivity, three harmonic constants
Etc..
Compared to laser parameters such as optical maser wavelength, repetition rate, pulse numbers, material crystals direction is to ablation result
It influences all ignored in very long following period of time.However it has recently been demonstrated that significant crystal orientation dependence is presented in laser lift-off
Property.
Therefore, significant ground crystal orientation is presented by burst point structure on third generation semiconductor material in the present embodiment the method
Dependence, if light polarization carries out ablation along S-polarization crystal orientation, a kind of reticular structure is presented in burst point, such as by multiple round sharp
The reticular structure array that light hot spot is formed；If laser polarization carries out ablation along P polarization, striated is presented in burst point, such as
The striated array formed by multiple square laser hot spots significantly improves the effect and third generation semiconductor substrate of burst point
Isolated precision.
Optionally, the wave-length coverage of the laser beam is 150nm-2000nm；Laser pulse be picosecond and nanosecond order.
Optionally, the sphere of action of the single burst point is 0.5 micron -100 microns.
Optionally, the tangential pulling force is the effect of wafer whole picture face, and dynamics is greater than 1kg.
The embodiment of the present invention also provides a kind of device for laser machining wafer, and as shown in Figures 2 to 7, described device includes:
Laser-processing system is built the laser beam formed and for emitting laser by laser, shaping element and passed through
Shaping element is shaped as the hot spot combination array with predetermined pattern, is then listed in crystalline substance by the light spot group combined array with predetermined pattern
Circle internal preset region forms sheet burst point；
Workbench, for the mobile workbench for placing wafer and by sheet burst point uniform fold in wafer preset plane shape
At leveling face burst point；
Separation system, for applying tangential pulling force to wafer both ends along the preset plane for being formed with leveling face burst point, so that
Wafer is separated.
The device of laser processing wafer provided in an embodiment of the present invention is mainly utilized with gallium nitride (GaN) and silicon carbide
(SiC), the broad stopbands such as zinc oxide (ZnO) are the third generation semiconductor material characteristic of representative, by matching corresponding tool
There is the hot spot combination array of predetermined pattern and forms sheet burst point, mobile work in inside wafer predeterminable area through laser-processing system
Making platform, whole uniform folds in wafer preset plane form leveling face burst point i.e. in wafer preset plane by sheet burst point, so
Wafer both ends are applied along the preset plane for being formed with leveling face burst point using separation system in wafer upper and lower surfaces afterwards tangential
Pulling force, so that wafer, which is carried out separation, realizes semiconductor substrate separation；Wherein, described device will be evenly arranged with the suction of small suction nozzle
Disk allows it to uniformly apply crystal column surface tangential pulling force as separation system, and therefore, the present embodiment described device can
The best hot spot combination array with predetermined pattern is matched for third generation semiconductor material characteristic and then passes through laser in crystalline substance
Circle internal action, which is realized, is separated into multi-disc for semiconductor substrate, so that laser lift-off ratio is greater than 1:10；It can also effectively mention
Processing efficiency is risen, the yields of third generation semiconductor substrate separation is improved；Simultaneously using separation system in wafer whole picture face pulling force
Effect can utmostly guarantee the integrality of wafer.
Optionally, described device further include:
Control system determines predetermined pattern for obtaining semiconductor material information, and according to the semiconductor material information
Hot spot combination array；
Preferably, the semiconductor material information includes material type, material ablation mechanism, material lattice, material crystal orientation
In one or any combination；
Preferably, the semiconductor material information is corresponding with the hot spot combination array of predetermined pattern.
Optionally, the hot spot combination array of the predetermined pattern includes square structure array, diamond structure array, shape changeable
Array of structures, trapezium structure array, reticular structure array, one or any combination in fringe-like structures array；Wherein,
The laser facula includes Gaussian spot, rectangular flat-top hot spot, circular flat hot spot, oval flat-top hot spot, diamond shape
One or any combination in flat-top hot spot.
Optionally, described device further include:
Adjustment system, for adjusting the action direction between laser beam polarization and material lattice, so that default by having
The light spot group combined array of pattern is listed in inside wafer predeterminable area and carries out lateral burst point formation sheet burst point.
The device of the present embodiment can be used for executing the technical solution of above method embodiment, realization principle and technology
Effect is similar, and details are not described herein again.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of method for laser machining wafer characterized by comprising
It is the hot spot combination array with predetermined pattern by laser beam shaping, and by the hot spot combination array with predetermined pattern
Sheet burst point is formed in inside wafer predeterminable area；
Sheet burst point uniform fold is simultaneously formed leveling face burst point by the mobile workbench for placing wafer in wafer preset plane；
Tangential pulling force is applied to wafer both ends along the preset plane for being formed with leveling face burst point, so as to which wafer is separated.
2. the method according to claim 1, wherein the described method includes:
Obtain semiconductor material information；Wherein, the semiconductor material information includes material type, material ablation mechanism, material
One or any combination in lattice, material crystal orientation；
The hot spot combination array of predetermined pattern is determined according to the semiconductor material information；Wherein, the semiconductor material information
It is corresponding with the hot spot combination array of predetermined pattern.
3. according to the method described in claim 2, it is characterized in that, the hot spot combination array of the predetermined pattern includes rectangular knot
Structure array, diamond structure array, shape changeable array of structures, trapezium structure array, reticular structure array, in fringe-like structures array
One or any combination；Wherein,
The laser facula includes Gaussian spot, rectangular flat-top hot spot, circular flat hot spot, oval flat-top hot spot, diamond shape flat-top
One or any combination in hot spot.
4. method according to claim 1 to 3, which is characterized in that it is described by laser beam shaping be with default figure
The hot spot combination array of case, and inside wafer predeterminable area is listed in by the light spot group combined array with predetermined pattern and forms sheet burst point
Before, the method also includes:
The action direction between laser beam polarization and material lattice is adjusted, so that by the hot spot combination array with predetermined pattern
Lateral burst point, which is carried out, in inside wafer predeterminable area forms sheet burst point.
5. method according to claim 1 to 4, which is characterized in that the wave-length coverage of the laser beam is 150nm-
2000nm。
6. according to the method described in claim 5, it is characterized in that, the sphere of action of the single burst point is 0.5 micron -100
Micron.
7. a kind of device for laser machining wafer characterized by comprising
It is shaped to be built the laser beam formed and for emitting laser by laser, shaping element for laser-processing system
Component shaping is the hot spot combination array with predetermined pattern, is then listed in wafer by the light spot group combined array with predetermined pattern
Portion's predeterminable area forms sheet burst point；
Workbench is formed in wafer preset plane whole for the mobile workbench for placing wafer and by sheet burst point uniform fold
Plane burst point；
Separation system, for applying tangential pulling force to wafer both ends along the preset plane for being formed with leveling face burst point, so that by brilliant
Circle is separated.
8. device according to claim 7, which is characterized in that described device further include:
Control system for obtaining semiconductor material information, and determines according to the semiconductor material information light of predetermined pattern
Spot combination array；
Preferably, the semiconductor material information include material type, material ablation mechanism, material lattice, one in material crystal orientation
Kind or any combination；
Preferably, the semiconductor material information is corresponding with the hot spot combination array of predetermined pattern.
9. device according to claim 7 or 8, which is characterized in that the hot spot combination array of the predetermined pattern includes side
Shape array of structures, diamond structure array, shape changeable array of structures, trapezium structure array, reticular structure array, fringe-like structures battle array
One or any combination in column；Wherein,
The laser facula includes Gaussian spot, rectangular flat-top hot spot, circular flat hot spot, oval flat-top hot spot, diamond shape flat-top
One or any combination in hot spot.
10. according to any device of claim 7-9, which is characterized in that described device further include:
Adjustment system, for adjusting the action direction between laser beam polarization and material lattice, so that by with predetermined pattern
Light spot group combined array be listed in inside wafer predeterminable area and carry out lateral burst point and form sheet burst point.
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| CN201811607512.9A CN109530936A (en) | 2018-12-27 | 2018-12-27 | A kind of method and device laser machining wafer |
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| CN201811607512.9A CN109530936A (en) | 2018-12-27 | 2018-12-27 | A kind of method and device laser machining wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110549016A (en) * | 2019-09-23 | 2019-12-10 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
| CN113838777A (en) * | 2021-09-03 | 2021-12-24 | 北京中科镭特电子有限公司 | Laser bonding-breaking detection control system |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294656A (en) * | 2004-04-02 | 2005-10-20 | Sharp Corp | Substrate manufacturing method and apparatus thereof |
| CN102388436A (en) * | 2008-09-23 | 2012-03-21 | Qmc株式会社 | Apparatus and method for manufacturing light-emitting diode |
| CN102714150A (en) * | 2009-12-07 | 2012-10-03 | Jp赛席尔联合股份有限公司 | Laser lift off systems and methods |
| CN103658993A (en) * | 2013-12-11 | 2014-03-26 | 北京理工大学 | Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control |
| CN103846547A (en) * | 2014-02-12 | 2014-06-11 | 苏州兰叶光电科技有限公司 | Multi-beam shaping laser processing system |
| CN105436710A (en) * | 2015-12-30 | 2016-03-30 | 大族激光科技产业集团股份有限公司 | Laser lift-off method for silicon wafer |
| CN105665946A (en) * | 2014-12-04 | 2016-06-15 | 株式会社迪思科 | Wafer producing method |
-
2018
- 2018-12-27 CN CN201811607512.9A patent/CN109530936A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294656A (en) * | 2004-04-02 | 2005-10-20 | Sharp Corp | Substrate manufacturing method and apparatus thereof |
| CN102388436A (en) * | 2008-09-23 | 2012-03-21 | Qmc株式会社 | Apparatus and method for manufacturing light-emitting diode |
| CN102714150A (en) * | 2009-12-07 | 2012-10-03 | Jp赛席尔联合股份有限公司 | Laser lift off systems and methods |
| CN103658993A (en) * | 2013-12-11 | 2014-03-26 | 北京理工大学 | Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control |
| CN103846547A (en) * | 2014-02-12 | 2014-06-11 | 苏州兰叶光电科技有限公司 | Multi-beam shaping laser processing system |
| CN105665946A (en) * | 2014-12-04 | 2016-06-15 | 株式会社迪思科 | Wafer producing method |
| CN105436710A (en) * | 2015-12-30 | 2016-03-30 | 大族激光科技产业集团股份有限公司 | Laser lift-off method for silicon wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110549016A (en) * | 2019-09-23 | 2019-12-10 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
| CN110549016B (en) * | 2019-09-23 | 2022-02-08 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
| CN113838777A (en) * | 2021-09-03 | 2021-12-24 | 北京中科镭特电子有限公司 | Laser bonding-breaking detection control system |
| CN113838777B (en) * | 2021-09-03 | 2023-08-25 | 北京中科镭特电子有限公司 | Detection control system for laser de-bonding |
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Application publication date: 20190329 |