CN108183102A - A kind of inverse-impedance type power MOSFET device - Google Patents
A kind of inverse-impedance type power MOSFET device Download PDFInfo
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- CN108183102A CN108183102A CN201711455406.9A CN201711455406A CN108183102A CN 108183102 A CN108183102 A CN 108183102A CN 201711455406 A CN201711455406 A CN 201711455406A CN 108183102 A CN108183102 A CN 108183102A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 description 7
- 230000002457 bidirectional effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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Abstract
The present invention provides a kind of inverse-impedance type power MOSFET device, including metalized drain, N-type drift region, the metallizing source being cascading from bottom to up；The lower surface of N-type drift region is backside structure, and backside structure includes：N-type lightly doped district, N-type forward direction field stop layer, first groove, first groove sequentially pass through N-type lightly doped district, N-type forward direction field stop layer extends into N-type drift region vertically upward from the upper surface of metalized drain；The upper surface of N-type drift region is Facad structure, and Facad structure includes：The reversed field stop layer of N-type, PXing Ti areas, second groove, p type buried layer；Second groove sequentially passes through N-type source region, PXing Ti areas, the reversed field stop layer of N-type extend into N-type drift region from the lower surface of metallizing source vertically downward；Structure provided by the invention has reverse blocking ability, while the presence of field stop layer prevents the punchthrough effect of drift region electric field, reduces the thickness of drift region, enables the device to obtain relatively low conducting resistance.
Description
Technical field
The present invention relates to power semiconductor technologies, more particularly to a kind of inverse-impedance type power MOSFET.
Background technology
Power MOSFET (mos field effect transistor) is with it with switching speed height, switching loss
The low, advantages such as drive loss is low, particularly play an important role in various transformation of electrical energies in high-frequency electrical energy transformation.Transformation of electrical energy
Generally include AC-to DC (AC-DC), direct current to exchange (DC-AC), DC to DC (DC-DC) and AC to AC (AC-
AC) several mapping modes.Indirect conversion i.e. AC-DC-AC modes may be used in AC-AC, and it is AC-AC that can also use directly transformation
Mode.Due to the connection capacitance (voltage-type transformation) that big capacitance is needed in AC-DC-AC indirect conversion systems or big inductance value
The relatively independent transformation system of two parts is connected by connection inductance (current mode transformation), and the big capacitance of capacitance and the electricity of big inductance value
Sense increases the wiring quantity between the component number and component of circuit, increases volume and the ghost effect of system, drops
The low reliability of system.AC-AC direct converting systems avoid big capacitance connection capacitance or big in traditional AC-DC-AC systems
Inductance value connects the use of inductance, reduces the cost, volume and ghost effect of system, and improve the reliability of system.But
Ability of the direct conversion requirements power switch of AC-AC with bidirectional conduction and two-way blocking-up, but the device for power switching of mainstream
Most of is one-way type device, and two-way type device is less.Although bidirectional thyristor or two antiparallel thyristors can conducts
Two-way switch, but both devices are by current control, driving circuit complexity.
Since power MOSFET does not have reverse conducting and the ability inversely blocked, built based on power MOSFET double
To switch, common scheme is as shown in Figure 1, need the drain terminal in power MOSFET to connect a diode, then by two groups of power
Together with MOSFET and the combination inverse parallel of diode.Due to the combination using 4 individual devices, the program increases device
Loss reduces the performance of two-way switch.In order to reduce individual devices quantity, document (D.H Lu, N Fujishima,
A.Sugi,et al.Integrated Bi-directional Trench Lateral Power MOSFETs for One
Chip Lithium-ion Battery Protection ICs, ISPSD ' 05,2005) and document (Y Fu, X Cheng, Y
Chen, et al.A 20-V CMOS-Based Monolithic Bidirectional Power Switch, IEEE
Electron Devices Letters, 2007) it is connected using two power MOSFET, although as shown in Fig. 2, number of devices subtracts
It is few, but due to being connected using two power MOSFET, which necessarily has larger conducting resistance, so as to larger
Power consumption.
Therefore, the conducting resistance of two-way switch is reduced, it is necessary to which in parallel using two power MOSFET, this just needs to have
The MOSFET of reverse blocking ability.Document (Seigo Mor, et al.Demonstration of 3kV 4H-SiC Reverse
Blocking MOSFET,Proceedings of the 2016 28th International Symposium on Power
Semiconductor Devices and ICs, June 12-16,2016, Prague, Czech Republic) it proposes in work(
The drain terminal of rate MOSFET increases a Schottky contacts, so as to which device be made to have reverse blocking ability.But, it is ensured that inverse-impedance type
Punch-through breakdown schottky junction from the body area of source to drain terminal does not occur in forward and reverse pressure resistance for power MOSFET, it is necessary to
With enough drift region lengths, and increase the increase that drift region length means that conducting resistance.
Invention content
In view of the above-mentioned problems, problem to be solved by this invention is：Offer one kind can be connected and composed double by inverse parallel
To the power MOSFET device with reverse blocking ability of switch, while the presence of field stop layer controls the thickness of drift region
Degree, can obtain relatively low conducting resistance.
For achieving the above object, technical solution of the present invention is as follows：
A kind of inverse-impedance type power MOSFET device, including be cascading from bottom to up metalized drain 1, N-type drift
Move area 4, metallizing source 16；The lower surface of the N-type drift region 4 is backside structure, and the backside structure includes：N-type is gently mixed
Miscellaneous area 2, N-type forward direction field stop layer 3, first groove 9, the lower surface of the N-type lightly doped district 2 and the upper table of metalized drain 1
Face forms Schottky contacts, and the lower surface of the N-type forward direction field stop layer 3 is contacted with the upper surface of N-type lightly doped district 2, described
The lower surface of first groove 9 is contacted with the upper surface of metalized drain 1, and the first groove 9 is filled with the first oxide layer 10, institute
It states and polysilicon field plate 11 is equipped in the first oxide layer 10, the upper surface of the polysilicon field plate 11 and metalized drain 1 directly connects
It touches；The first groove 9 sequentially passes through N-type lightly doped district 2, N-type normal field vertically upward from the upper surface of metalized drain 1
Trapping layer 3 extends into N-type drift region 4；The upper surface of the N-type drift region 4 is Facad structure, and the Facad structure includes：N-type
Reversed field stop layer 5, PXing Ti areas 6, second groove 12, p type buried layer 13；The upper surface of the reversed field stop layer 5 of N-type and p-type
The lower surface contact in body area 6；The upper surface in the PXing Ti areas 6 has N-type source region 8 and a p-type contact zone 7, the N-type source region 8 with
P-type contact zone 7 is adjacent, and N-type source region 8 is contacted with lower surface of the upper surface of p-type contact zone 7 with metallizing source 16；Institute
P type buried layer 13 is stated to be located at immediately below second groove 12 and be in direct contact with second groove 12；The upper surface of the second groove 12
It is contacted with the lower surface of metallizing source 16；The inside of the second groove 12 is filled with the second oxide layer 14, and the second oxidation
In layer 14 there are polygate electrodes 15, the second oxide layer is spaced between the polygate electrodes 15 and metallizing source 16
14, the lower surface depth of the polygate electrodes 15 is more than the junction depth in PXing Ti areas 6；The second groove 12 from metallization source
The lower surface of pole 16 sequentially passes through N-type source region 8 vertically downward, PXing Ti areas 6, the reversed field stop layer 5 of N-type extend into N-type drift
Area 4.
It is preferred that the lower surface and the upper surface of first groove 9 of the p type buried layer 13 are in direct contact.
It is preferred that the silicon materials in device replace with silicon carbide, GaAs, indium phosphide or germanium silicon semiconductor material
Material.
Beneficial effects of the present invention are：Compared to structure before, structure provided by the invention has reverse blocking ability,
The presence of field stop layer prevents the punchthrough effect of drift region electric field simultaneously, reduces the thickness of drift region, enables the device to obtain
Obtain relatively low conducting resistance.
Description of the drawings
Fig. 1 is the two-way switch schematic diagram that two MOSFET reverse parallel connections are formed；
Fig. 2 is two MOSFET two-way switch schematic diagrames in series；
Fig. 3 is the cross-sectional view of inverse-impedance type power MOSFET provided by the invention a kind of.
Wherein, 1 is metalized drain, and 2 be N-type lightly doped district, and 3 be N-type forward direction field stop layer, and 4 be N-type drift region, and 5 are
The reversed field stop layer of N-type, 6 be PXing Ti areas, and 7 be p-type contact zone, and 8 be N-type source region, and 9 be first groove, and 10 be the first oxidation
Layer, 11 be polysilicon field plate, and 12 be second groove, and 13 be p type buried layer, and 14 be the second oxide layer, and 15 be polygate electrodes, 16
For metallizing source.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Embodiment 1
A kind of inverse-impedance type power MOSFET device, including be cascading from bottom to up metalized drain 1, N-type drift
Move area 4, metallizing source 16；The lower surface of the N-type drift region 4 is backside structure, and the backside structure includes：N-type is gently mixed
Miscellaneous area 2, N-type forward direction field stop layer 3, first groove 9, the lower surface of the N-type lightly doped district 2 and the upper table of metalized drain 1
Face forms Schottky contacts, and the lower surface of the N-type forward direction field stop layer 3 is contacted with the upper surface of N-type lightly doped district 2, described
The lower surface of first groove 9 is contacted with the upper surface of metalized drain 1, and the first groove 9 is filled with the first oxide layer 10, institute
It states and polysilicon field plate 11 is equipped in the first oxide layer 10, the upper surface of the polysilicon field plate 11 and metalized drain 1 directly connects
It touches；The first groove 9 sequentially passes through N-type lightly doped district 2, N-type normal field vertically upward from the upper surface of metalized drain 1
Trapping layer 3 extends into N-type drift region 4；The upper surface of the N-type drift region 4 is Facad structure, and the Facad structure includes：N-type
Reversed field stop layer 5, PXing Ti areas 6, second groove 12, p type buried layer 13；The upper surface of the reversed field stop layer 5 of N-type and p-type
The lower surface contact in body area 6；The upper surface in the PXing Ti areas 6 has N-type source region 8 and a p-type contact zone 7, the N-type source region 8 with
P-type contact zone 7 is adjacent, and N-type source region 8 is contacted with lower surface of the upper surface of p-type contact zone 7 with metallizing source 16；Institute
P type buried layer 13 is stated to be located at immediately below second groove 12 and be in direct contact with second groove 12；The upper surface of the second groove 12
It is contacted with the lower surface of metallizing source 16；The inside of the second groove 12 is filled with the second oxide layer 14, and the second oxidation
In layer 14 there are polygate electrodes 15, the second oxide layer is spaced between the polygate electrodes 15 and metallizing source 16
14, the lower surface depth of the polygate electrodes 15 is more than the junction depth in PXing Ti areas 6；The second groove 12 from metallization source
The lower surface of pole 16 sequentially passes through N-type source region 8 vertically downward, PXing Ti areas 6, the reversed field stop layer 5 of N-type extend into N-type drift
Area 4.
The operation principle of the present embodiment is as follows：
A kind of inverse-impedance type power MOSFET of this example is equivalent to Grooved-gate MOSFET’s series connection schottky junction, during forward conduction
Electrode connection mode be：Metallizing source 16 is grounded, and metalized drain 1 connects high potential, and polygate electrodes 15 connect high potential.
When the positive bias-voltage that polygate electrodes 15 apply reaches threshold voltage, close to the side of the second oxide layer 14 in PXing Ti areas 6
Wall forms inversion channel；At the same time, when metalized drain 1 is applied with positive bias-voltage, the contact berrier drop of Schottky contacts
Low, electronics flows to metalized drain 1 from N-type lightly doped district 2.Therefore, electronics passes through PXing Ti areas as carrier from N-type source region 8
The reversed field stop layer 5 of inversion channel, N-type in 6 injects N-type drift region 4, is then gently mixed by N-type forward direction field stop layer 3, N-type
Miscellaneous area 2 flows to metalized drain 1, forms forward conduction electric current.
A kind of inverse-impedance type power MOSFET of this example is equivalent to Grooved-gate MOSFET’s series connection schottky junction, during forward blocking
Electrode connection mode be：Metallizing source 16 is grounded, and polygate electrodes 15 are grounded, and metalized drain 1 connects high potential.This
When, PXing Ti areas 6 and the PN junction pressure resistance of the reversed field stop layer 5 of N-type, depletion region expand to N-type drift from the reversed field stop layer 5 of N-type
Area 4 terminates at N-type forward direction field stop layer 3.Break-through not occurring the schottky junction from the body area of source to drain terminal is hit
The thickness of N-type drift region 4 is controlled while wearing.In addition, p type buried layer 13 equally can form lateral electricity with N-type drift region 4
, further improve the pressure resistance during forward blocking of device；Simultaneously because p type buried layer 13 is located at the bottom of second groove 12, it can
Punctured with the bottom for preventing second groove 12, improve device reliability.
A kind of inverse-impedance type power MOSFET of this example is equivalent to Grooved-gate MOSFET’s series connection schottky junction, during reverse blocking
Electrode connection mode be：Metallizing source 16 connects high potential, and polygate electrodes 15 are grounded, and metalized drain 1 is grounded.This
When, schottky junction pressure resistance, depletion region is diffused into N-type drift region 4 from N-type lightly doped district 2, whole at the reversed field stop layer 5 of N-type
Knot.N-type drift region 4 is controlled while the punch-through breakdown the schottky junction from the body area of source to drain terminal does not occur
Thickness.In addition, the first oxide layer 10 and polysilicon field plate 11 form metal oxide layer-semiconductor (MOS) capacitance, in Xiao Te
During base junction pressure resistance, mos capacitance can introduce transverse electric field, and exhausting for auxiliary N-type forward direction field stop layer 3 is reduced at schottky junction
Electric field strength improves device pressure resistance.
A kind of inverse-impedance type power MOSFET proposed by the present invention, the silicon materials in device replace with silicon carbide, GaAs, phosphorus
Change indium or germanium silicon semiconductor material.
Embodiment 2
The present embodiment and embodiment 2 difference lies in：The lower surface of the p type buried layer 13 and the upper surface of first groove 9
It is in direct contact.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, all those of ordinary skill in the art without departing from disclosed spirit with being completed under technological thought
All equivalent modifications or change, should by the present invention claim be covered.
Claims (3)
1. a kind of inverse-impedance type power MOSFET device, which is characterized in that including the metallization leakage being cascading from bottom to up
Pole (1), N-type drift region (4), metallizing source (16)；The lower surface of the N-type drift region (4) be backside structure, the back side
Structure includes：N-type lightly doped district (2), N-type forward direction field stop layer (3), first groove (9), under the N-type lightly doped district (2)
Surface and the upper surface of metalized drain (1) form Schottky contacts, the lower surface of the N-type forward direction field stop layer (3) and N-type
The upper surface contact of lightly doped district (2), the lower surface of the first groove (9) are contacted with the upper surface of metalized drain (1), institute
First groove (9) is stated filled with the first oxide layer (10), polysilicon field plate (11) is equipped in first oxide layer (10), it is described
Polysilicon field plate (11) and the upper surface of metalized drain (1) are in direct contact；The first groove (9) is from metalized drain (1)
Upper surface, sequentially pass through N-type lightly doped district (2) vertically upward, N-type forward direction field stop layer (3) extends into N-type drift region (4)；
The upper surface of the N-type drift region (4) is Facad structure, and the Facad structure includes：The reversed field stop layer of N-type (5), p-type body
Area (6), second groove (12), p type buried layer (13)；Under the upper surface of the reversed field stop layer of N-type (5) and PXing Ti areas (6)
Surface contacts；The upper surface of the PXing Ti areas (6) has N-type source region (8) and p-type contact zone (7), the N-type source region (8) and P
Type contact zone (7) is adjacent, and lower surface of the upper surface of N-type source region (8) and p-type contact zone (7) with metallizing source (16)
Contact；The p type buried layer (13) is in direct contact immediately below second groove (12) and with second groove (12)；Second ditch
The upper surface of slot (12) is contacted with the lower surface of metallizing source (16)；The inside of the second groove (12) is filled with the second oxygen
Change layer (14), and there are polygate electrodes (15) in the second oxide layer (14), the polygate electrodes (15) and metallization
The second oxide layer (14) is spaced between source electrode (16), the lower surface depth of the polygate electrodes (15) is more than PXing Ti areas
(6) junction depth；The second groove (12) sequentially passes through N-type source region vertically downward from the lower surface of metallizing source (16)
(8), PXing Ti areas (6), the reversed field stop layer of N-type (5) extend into N-type drift region (4).
2. a kind of inverse-impedance type power MOSFET device according to claim 1, it is characterised in that：The p type buried layer (13)
Lower surface and the upper surface of first groove (9) be in direct contact.
3. a kind of inverse-impedance type power MOSFET device according to claim 1, it is characterised in that：Silicon materials in device replace
It is changed to silicon carbide, GaAs, indium phosphide or germanium silicon semiconductor material.
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| CN201711455406.9A CN108183102B (en) | 2017-12-28 | 2017-12-28 | Reverse-resistance power MOSFET device |
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| CN201711455406.9A CN108183102B (en) | 2017-12-28 | 2017-12-28 | Reverse-resistance power MOSFET device |
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| CN108183102B CN108183102B (en) | 2020-07-10 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023082203A1 (en) * | 2021-11-12 | 2023-05-19 | Innoscience (Suzhou) Technology Co., Ltd. | Nitride-based semiconductor device and method for manufacturing thereof |
| US12125847B2 (en) | 2021-11-12 | 2024-10-22 | Innoscience (Suzhou) Technology Co., Ltd. | Nitride-based semiconductor device and method for manufacturing the same |
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2017
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| CN103258847A (en) * | 2013-05-09 | 2013-08-21 | 电子科技大学 | Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers |
| CN103794647A (en) * | 2014-02-28 | 2014-05-14 | 电子科技大学 | Bidirectional IGBT device and manufacturing method thereof |
| CN105914231A (en) * | 2016-06-28 | 2016-08-31 | 上海华虹宏力半导体制造有限公司 | Charge storage type IGBT and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023082203A1 (en) * | 2021-11-12 | 2023-05-19 | Innoscience (Suzhou) Technology Co., Ltd. | Nitride-based semiconductor device and method for manufacturing thereof |
| US12125847B2 (en) | 2021-11-12 | 2024-10-22 | Innoscience (Suzhou) Technology Co., Ltd. | Nitride-based semiconductor device and method for manufacturing the same |
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