CN108183102A - A kind of inverse-impedance type power MOSFET device - Google Patents

A kind of inverse-impedance type power MOSFET device Download PDF

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Publication number
CN108183102A
CN108183102A CN201711455406.9A CN201711455406A CN108183102A CN 108183102 A CN108183102 A CN 108183102A CN 201711455406 A CN201711455406 A CN 201711455406A CN 108183102 A CN108183102 A CN 108183102A
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type
groove
drift region
field stop
stop layer
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CN108183102B (en
Inventor
任敏
杨梦琦
王梁浩
李泽宏
高巍
张金平
张波
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University of Electronic Science and Technology of China
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention provides a kind of inverse-impedance type power MOSFET device, including metalized drain, N-type drift region, the metallizing source being cascading from bottom to up;The lower surface of N-type drift region is backside structure, and backside structure includes:N-type lightly doped district, N-type forward direction field stop layer, first groove, first groove sequentially pass through N-type lightly doped district, N-type forward direction field stop layer extends into N-type drift region vertically upward from the upper surface of metalized drain;The upper surface of N-type drift region is Facad structure, and Facad structure includes:The reversed field stop layer of N-type, PXing Ti areas, second groove, p type buried layer;Second groove sequentially passes through N-type source region, PXing Ti areas, the reversed field stop layer of N-type extend into N-type drift region from the lower surface of metallizing source vertically downward;Structure provided by the invention has reverse blocking ability, while the presence of field stop layer prevents the punchthrough effect of drift region electric field, reduces the thickness of drift region, enables the device to obtain relatively low conducting resistance.

Description

A kind of inverse-impedance type power MOSFET device
Technical field
The present invention relates to power semiconductor technologies, more particularly to a kind of inverse-impedance type power MOSFET.
Background technology
Power MOSFET (mos field effect transistor) is with it with switching speed height, switching loss The low, advantages such as drive loss is low, particularly play an important role in various transformation of electrical energies in high-frequency electrical energy transformation.Transformation of electrical energy Generally include AC-to DC (AC-DC), direct current to exchange (DC-AC), DC to DC (DC-DC) and AC to AC (AC- AC) several mapping modes.Indirect conversion i.e. AC-DC-AC modes may be used in AC-AC, and it is AC-AC that can also use directly transformation Mode.Due to the connection capacitance (voltage-type transformation) that big capacitance is needed in AC-DC-AC indirect conversion systems or big inductance value The relatively independent transformation system of two parts is connected by connection inductance (current mode transformation), and the big capacitance of capacitance and the electricity of big inductance value Sense increases the wiring quantity between the component number and component of circuit, increases volume and the ghost effect of system, drops The low reliability of system.AC-AC direct converting systems avoid big capacitance connection capacitance or big in traditional AC-DC-AC systems Inductance value connects the use of inductance, reduces the cost, volume and ghost effect of system, and improve the reliability of system.But Ability of the direct conversion requirements power switch of AC-AC with bidirectional conduction and two-way blocking-up, but the device for power switching of mainstream Most of is one-way type device, and two-way type device is less.Although bidirectional thyristor or two antiparallel thyristors can conducts Two-way switch, but both devices are by current control, driving circuit complexity.
Since power MOSFET does not have reverse conducting and the ability inversely blocked, built based on power MOSFET double To switch, common scheme is as shown in Figure 1, need the drain terminal in power MOSFET to connect a diode, then by two groups of power Together with MOSFET and the combination inverse parallel of diode.Due to the combination using 4 individual devices, the program increases device Loss reduces the performance of two-way switch.In order to reduce individual devices quantity, document (D.H Lu, N Fujishima, A.Sugi,et al.Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs, ISPSD ' 05,2005) and document (Y Fu, X Cheng, Y Chen, et al.A 20-V CMOS-Based Monolithic Bidirectional Power Switch, IEEE Electron Devices Letters, 2007) it is connected using two power MOSFET, although as shown in Fig. 2, number of devices subtracts It is few, but due to being connected using two power MOSFET, which necessarily has larger conducting resistance, so as to larger Power consumption.
Therefore, the conducting resistance of two-way switch is reduced, it is necessary to which in parallel using two power MOSFET, this just needs to have The MOSFET of reverse blocking ability.Document (Seigo Mor, et al.Demonstration of 3kV 4H-SiC Reverse Blocking MOSFET,Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, June 12-16,2016, Prague, Czech Republic) it proposes in work( The drain terminal of rate MOSFET increases a Schottky contacts, so as to which device be made to have reverse blocking ability.But, it is ensured that inverse-impedance type Punch-through breakdown schottky junction from the body area of source to drain terminal does not occur in forward and reverse pressure resistance for power MOSFET, it is necessary to With enough drift region lengths, and increase the increase that drift region length means that conducting resistance.
Invention content
In view of the above-mentioned problems, problem to be solved by this invention is:Offer one kind can be connected and composed double by inverse parallel To the power MOSFET device with reverse blocking ability of switch, while the presence of field stop layer controls the thickness of drift region Degree, can obtain relatively low conducting resistance.
For achieving the above object, technical solution of the present invention is as follows:
A kind of inverse-impedance type power MOSFET device, including be cascading from bottom to up metalized drain 1, N-type drift Move area 4, metallizing source 16;The lower surface of the N-type drift region 4 is backside structure, and the backside structure includes:N-type is gently mixed Miscellaneous area 2, N-type forward direction field stop layer 3, first groove 9, the lower surface of the N-type lightly doped district 2 and the upper table of metalized drain 1 Face forms Schottky contacts, and the lower surface of the N-type forward direction field stop layer 3 is contacted with the upper surface of N-type lightly doped district 2, described The lower surface of first groove 9 is contacted with the upper surface of metalized drain 1, and the first groove 9 is filled with the first oxide layer 10, institute It states and polysilicon field plate 11 is equipped in the first oxide layer 10, the upper surface of the polysilicon field plate 11 and metalized drain 1 directly connects It touches;The first groove 9 sequentially passes through N-type lightly doped district 2, N-type normal field vertically upward from the upper surface of metalized drain 1 Trapping layer 3 extends into N-type drift region 4;The upper surface of the N-type drift region 4 is Facad structure, and the Facad structure includes:N-type Reversed field stop layer 5, PXing Ti areas 6, second groove 12, p type buried layer 13;The upper surface of the reversed field stop layer 5 of N-type and p-type The lower surface contact in body area 6;The upper surface in the PXing Ti areas 6 has N-type source region 8 and a p-type contact zone 7, the N-type source region 8 with P-type contact zone 7 is adjacent, and N-type source region 8 is contacted with lower surface of the upper surface of p-type contact zone 7 with metallizing source 16;Institute P type buried layer 13 is stated to be located at immediately below second groove 12 and be in direct contact with second groove 12;The upper surface of the second groove 12 It is contacted with the lower surface of metallizing source 16;The inside of the second groove 12 is filled with the second oxide layer 14, and the second oxidation In layer 14 there are polygate electrodes 15, the second oxide layer is spaced between the polygate electrodes 15 and metallizing source 16 14, the lower surface depth of the polygate electrodes 15 is more than the junction depth in PXing Ti areas 6;The second groove 12 from metallization source The lower surface of pole 16 sequentially passes through N-type source region 8 vertically downward, PXing Ti areas 6, the reversed field stop layer 5 of N-type extend into N-type drift Area 4.
It is preferred that the lower surface and the upper surface of first groove 9 of the p type buried layer 13 are in direct contact.
It is preferred that the silicon materials in device replace with silicon carbide, GaAs, indium phosphide or germanium silicon semiconductor material Material.
Beneficial effects of the present invention are:Compared to structure before, structure provided by the invention has reverse blocking ability, The presence of field stop layer prevents the punchthrough effect of drift region electric field simultaneously, reduces the thickness of drift region, enables the device to obtain Obtain relatively low conducting resistance.
Description of the drawings
Fig. 1 is the two-way switch schematic diagram that two MOSFET reverse parallel connections are formed;
Fig. 2 is two MOSFET two-way switch schematic diagrames in series;
Fig. 3 is the cross-sectional view of inverse-impedance type power MOSFET provided by the invention a kind of.
Wherein, 1 is metalized drain, and 2 be N-type lightly doped district, and 3 be N-type forward direction field stop layer, and 4 be N-type drift region, and 5 are The reversed field stop layer of N-type, 6 be PXing Ti areas, and 7 be p-type contact zone, and 8 be N-type source region, and 9 be first groove, and 10 be the first oxidation Layer, 11 be polysilicon field plate, and 12 be second groove, and 13 be p type buried layer, and 14 be the second oxide layer, and 15 be polygate electrodes, 16 For metallizing source.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from Various modifications or alterations are carried out under the spirit of the present invention.
Embodiment 1
A kind of inverse-impedance type power MOSFET device, including be cascading from bottom to up metalized drain 1, N-type drift Move area 4, metallizing source 16;The lower surface of the N-type drift region 4 is backside structure, and the backside structure includes:N-type is gently mixed Miscellaneous area 2, N-type forward direction field stop layer 3, first groove 9, the lower surface of the N-type lightly doped district 2 and the upper table of metalized drain 1 Face forms Schottky contacts, and the lower surface of the N-type forward direction field stop layer 3 is contacted with the upper surface of N-type lightly doped district 2, described The lower surface of first groove 9 is contacted with the upper surface of metalized drain 1, and the first groove 9 is filled with the first oxide layer 10, institute It states and polysilicon field plate 11 is equipped in the first oxide layer 10, the upper surface of the polysilicon field plate 11 and metalized drain 1 directly connects It touches;The first groove 9 sequentially passes through N-type lightly doped district 2, N-type normal field vertically upward from the upper surface of metalized drain 1 Trapping layer 3 extends into N-type drift region 4;The upper surface of the N-type drift region 4 is Facad structure, and the Facad structure includes:N-type Reversed field stop layer 5, PXing Ti areas 6, second groove 12, p type buried layer 13;The upper surface of the reversed field stop layer 5 of N-type and p-type The lower surface contact in body area 6;The upper surface in the PXing Ti areas 6 has N-type source region 8 and a p-type contact zone 7, the N-type source region 8 with P-type contact zone 7 is adjacent, and N-type source region 8 is contacted with lower surface of the upper surface of p-type contact zone 7 with metallizing source 16;Institute P type buried layer 13 is stated to be located at immediately below second groove 12 and be in direct contact with second groove 12;The upper surface of the second groove 12 It is contacted with the lower surface of metallizing source 16;The inside of the second groove 12 is filled with the second oxide layer 14, and the second oxidation In layer 14 there are polygate electrodes 15, the second oxide layer is spaced between the polygate electrodes 15 and metallizing source 16 14, the lower surface depth of the polygate electrodes 15 is more than the junction depth in PXing Ti areas 6;The second groove 12 from metallization source The lower surface of pole 16 sequentially passes through N-type source region 8 vertically downward, PXing Ti areas 6, the reversed field stop layer 5 of N-type extend into N-type drift Area 4.
The operation principle of the present embodiment is as follows:
A kind of inverse-impedance type power MOSFET of this example is equivalent to Grooved-gate MOSFET’s series connection schottky junction, during forward conduction Electrode connection mode be:Metallizing source 16 is grounded, and metalized drain 1 connects high potential, and polygate electrodes 15 connect high potential. When the positive bias-voltage that polygate electrodes 15 apply reaches threshold voltage, close to the side of the second oxide layer 14 in PXing Ti areas 6 Wall forms inversion channel;At the same time, when metalized drain 1 is applied with positive bias-voltage, the contact berrier drop of Schottky contacts Low, electronics flows to metalized drain 1 from N-type lightly doped district 2.Therefore, electronics passes through PXing Ti areas as carrier from N-type source region 8 The reversed field stop layer 5 of inversion channel, N-type in 6 injects N-type drift region 4, is then gently mixed by N-type forward direction field stop layer 3, N-type Miscellaneous area 2 flows to metalized drain 1, forms forward conduction electric current.
A kind of inverse-impedance type power MOSFET of this example is equivalent to Grooved-gate MOSFET’s series connection schottky junction, during forward blocking Electrode connection mode be:Metallizing source 16 is grounded, and polygate electrodes 15 are grounded, and metalized drain 1 connects high potential.This When, PXing Ti areas 6 and the PN junction pressure resistance of the reversed field stop layer 5 of N-type, depletion region expand to N-type drift from the reversed field stop layer 5 of N-type Area 4 terminates at N-type forward direction field stop layer 3.Break-through not occurring the schottky junction from the body area of source to drain terminal is hit The thickness of N-type drift region 4 is controlled while wearing.In addition, p type buried layer 13 equally can form lateral electricity with N-type drift region 4 , further improve the pressure resistance during forward blocking of device;Simultaneously because p type buried layer 13 is located at the bottom of second groove 12, it can Punctured with the bottom for preventing second groove 12, improve device reliability.
A kind of inverse-impedance type power MOSFET of this example is equivalent to Grooved-gate MOSFET’s series connection schottky junction, during reverse blocking Electrode connection mode be:Metallizing source 16 connects high potential, and polygate electrodes 15 are grounded, and metalized drain 1 is grounded.This When, schottky junction pressure resistance, depletion region is diffused into N-type drift region 4 from N-type lightly doped district 2, whole at the reversed field stop layer 5 of N-type Knot.N-type drift region 4 is controlled while the punch-through breakdown the schottky junction from the body area of source to drain terminal does not occur Thickness.In addition, the first oxide layer 10 and polysilicon field plate 11 form metal oxide layer-semiconductor (MOS) capacitance, in Xiao Te During base junction pressure resistance, mos capacitance can introduce transverse electric field, and exhausting for auxiliary N-type forward direction field stop layer 3 is reduced at schottky junction Electric field strength improves device pressure resistance.
A kind of inverse-impedance type power MOSFET proposed by the present invention, the silicon materials in device replace with silicon carbide, GaAs, phosphorus Change indium or germanium silicon semiconductor material.
Embodiment 2
The present embodiment and embodiment 2 difference lies in:The lower surface of the p type buried layer 13 and the upper surface of first groove 9 It is in direct contact.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause This, all those of ordinary skill in the art without departing from disclosed spirit with being completed under technological thought All equivalent modifications or change, should by the present invention claim be covered.

Claims (3)

1. a kind of inverse-impedance type power MOSFET device, which is characterized in that including the metallization leakage being cascading from bottom to up Pole (1), N-type drift region (4), metallizing source (16);The lower surface of the N-type drift region (4) be backside structure, the back side Structure includes:N-type lightly doped district (2), N-type forward direction field stop layer (3), first groove (9), under the N-type lightly doped district (2) Surface and the upper surface of metalized drain (1) form Schottky contacts, the lower surface of the N-type forward direction field stop layer (3) and N-type The upper surface contact of lightly doped district (2), the lower surface of the first groove (9) are contacted with the upper surface of metalized drain (1), institute First groove (9) is stated filled with the first oxide layer (10), polysilicon field plate (11) is equipped in first oxide layer (10), it is described Polysilicon field plate (11) and the upper surface of metalized drain (1) are in direct contact;The first groove (9) is from metalized drain (1) Upper surface, sequentially pass through N-type lightly doped district (2) vertically upward, N-type forward direction field stop layer (3) extends into N-type drift region (4); The upper surface of the N-type drift region (4) is Facad structure, and the Facad structure includes:The reversed field stop layer of N-type (5), p-type body Area (6), second groove (12), p type buried layer (13);Under the upper surface of the reversed field stop layer of N-type (5) and PXing Ti areas (6) Surface contacts;The upper surface of the PXing Ti areas (6) has N-type source region (8) and p-type contact zone (7), the N-type source region (8) and P Type contact zone (7) is adjacent, and lower surface of the upper surface of N-type source region (8) and p-type contact zone (7) with metallizing source (16) Contact;The p type buried layer (13) is in direct contact immediately below second groove (12) and with second groove (12);Second ditch The upper surface of slot (12) is contacted with the lower surface of metallizing source (16);The inside of the second groove (12) is filled with the second oxygen Change layer (14), and there are polygate electrodes (15) in the second oxide layer (14), the polygate electrodes (15) and metallization The second oxide layer (14) is spaced between source electrode (16), the lower surface depth of the polygate electrodes (15) is more than PXing Ti areas (6) junction depth;The second groove (12) sequentially passes through N-type source region vertically downward from the lower surface of metallizing source (16) (8), PXing Ti areas (6), the reversed field stop layer of N-type (5) extend into N-type drift region (4).
2. a kind of inverse-impedance type power MOSFET device according to claim 1, it is characterised in that:The p type buried layer (13) Lower surface and the upper surface of first groove (9) be in direct contact.
3. a kind of inverse-impedance type power MOSFET device according to claim 1, it is characterised in that:Silicon materials in device replace It is changed to silicon carbide, GaAs, indium phosphide or germanium silicon semiconductor material.
CN201711455406.9A 2017-12-28 2017-12-28 Reverse-resistance power MOSFET device Expired - Fee Related CN108183102B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023082203A1 (en) * 2021-11-12 2023-05-19 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing thereof
US12125847B2 (en) 2021-11-12 2024-10-22 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same

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Publication number Priority date Publication date Assignee Title
CN103258847A (en) * 2013-05-09 2013-08-21 电子科技大学 Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers
CN103794647A (en) * 2014-02-28 2014-05-14 电子科技大学 Bidirectional IGBT device and manufacturing method thereof
CN105914231A (en) * 2016-06-28 2016-08-31 上海华虹宏力半导体制造有限公司 Charge storage type IGBT and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258847A (en) * 2013-05-09 2013-08-21 电子科技大学 Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers
CN103794647A (en) * 2014-02-28 2014-05-14 电子科技大学 Bidirectional IGBT device and manufacturing method thereof
CN105914231A (en) * 2016-06-28 2016-08-31 上海华虹宏力半导体制造有限公司 Charge storage type IGBT and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023082203A1 (en) * 2021-11-12 2023-05-19 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing thereof
US12125847B2 (en) 2021-11-12 2024-10-22 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same

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