CN108183102B - Reverse-resistance power MOSFET device - Google Patents

Reverse-resistance power MOSFET device Download PDF

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Publication number
CN108183102B
CN108183102B CN201711455406.9A CN201711455406A CN108183102B CN 108183102 B CN108183102 B CN 108183102B CN 201711455406 A CN201711455406 A CN 201711455406A CN 108183102 B CN108183102 B CN 108183102B
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region
metalized
drift region
reverse
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CN108183102A (en
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任敏
杨梦琦
王梁浩
李泽宏
高巍
张金平
张波
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The invention provides a reverse-resistance power MOSFET (metal oxide semiconductor field effect transistor) device, which comprises a metalized drain electrode, an N-type drift region and a metalized source electrode which are sequentially stacked from bottom to top; the lower surface of N type drift region is back structure, and back structure includes: the N-type drift region is formed by sequentially penetrating the N-type lightly doped region and the N-type positive field stop layer from the upper surface of the metalized drain electrode vertically and upwards and extending into the N-type drift region; the upper surface of N type drift region is positive structure, and positive structure includes: the N-type reverse field stop layer, the P-type body region, the second groove and the P-type buried layer; the second groove penetrates through the N-type source region, the P-type body region and the N-type reverse field stop layer from the lower surface of the metalized source electrode to extend into the N-type drift region vertically and downwards in sequence; the structure provided by the invention has reverse blocking capability, and meanwhile, the existence of the field stop layer prevents the punch-through effect of an electric field in the drift region, reduces the thickness of the drift region and enables the device to obtain lower on-resistance.

Description

Reverse-resistance power MOSFET device
Technical Field
The invention relates to a power semiconductor technology, in particular to a reverse resistance type power MOSFET.
Background
Power MOSFETs (metal oxide semiconductor field effect transistors) play an important role in various electric energy conversion, particularly in high-frequency electric energy conversion, because they have advantages of high switching speed, low switching loss, low driving loss, and the like. The electric energy conversion generally includes several conversion modes of alternating current to direct current (AC-DC), direct current to alternating current (DC-AC), direct current to direct current (DC-DC) and alternating current to alternating current (AC-AC). The AC-AC can adopt an indirect conversion mode, namely an AC-DC-AC mode, and can also adopt a direct conversion mode, namely an AC-AC mode. Because the AC-DC-AC indirect conversion system needs a connection capacitor with a large capacitance value (voltage type conversion) or a connection inductor with a large inductance value (current type conversion) to connect the two parts of the conversion system which are relatively independent, the capacitance with the large capacitance value and the inductance with the large inductance value increase the number of components of the circuit and the number of connecting lines among the components, increase the volume and parasitic effect of the system, and reduce the reliability of the system. The AC-AC direct conversion system avoids the use of a large capacitance value connection capacitor or a large inductance value connection inductor in the traditional AC-DC-AC system, reduces the cost, the volume and the parasitic effect of the system, and improves the reliability of the system. However, direct AC-AC conversion requires the power switch to have the capability of bidirectional conduction and bidirectional blocking, but most of the mainstream power switches are unidirectional devices and few bidirectional devices. Although the bidirectional thyristor or two anti-parallel thyristors can be used as a bidirectional switch, the two devices are controlled by current, and a driving circuit is complex.
In order to reduce the number of independent Devices, the literature (D.H L u, N full, a. sugi, et al. integrated Bi-directional Trench L active Power MOSFETs for on chip L bit-on Battery Protection ICs, ispd' 05,2005) and the literature (Y Fu, X chen, et al. a 20-V CMOS-Based bipolar Power Switch, ieeeectron Devices L, 2007) use two Power MOSFETs in series, and thus reduce the number of Bidirectional Power switches, as shown in fig. 2, compared to the two Power MOSFETs in series, the conventional solution requires two Power MOSFETs in series, which have a larger number of Bidirectional Power switches, although the two Power MOSFETs are connected in series.
Therefore, to reduce the on-resistance of the bidirectional switch, two power MOSFETs must be used in parallel, which requires a MOSFET having reverse blocking capability. The literature (semiconductor Mor, et al, Demonration of 3kV 4H-SiC RevereBlocking MOSFET, Proceedings of the 201628 th International Symposium on Power semiconductor Devices and ICs, June 12-16,2016, Prague, Czech repair) proposes adding a Schottky contact to the drain of a power MOSFET, thereby providing the device with reverse blocking capability. However, in order to ensure that the reverse resistance power MOSFET does not have punch-through breakdown between schottky junctions from the body region of the source terminal to the drain terminal at the time of forward and reverse withstand voltage, it is necessary to have a sufficient drift region length, and increasing the drift region length means an increase in on-resistance.
Disclosure of Invention
In view of the above problems, the present invention is to solve the following problems: a power MOSFET device having reverse blocking capability is provided which can constitute a bidirectional switch by antiparallel connection, while the presence of a field stop layer controls the thickness of the drift region, enabling a lower on-resistance to be obtained.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a reverse resistance type power MOSFET device comprises a metalized drain electrode 1, an N-type drift region 4 and a metalized source electrode 16 which are sequentially stacked from bottom to top; the lower surface of the N-type drift region 4 is a back structure, and the back structure includes: the N-type light doped region 2, the N-type forward field stop layer 3 and the first groove 9, wherein the lower surface of the N-type light doped region 2 is in Schottky contact with the upper surface of the metalized drain electrode 1, the lower surface of the N-type forward field stop layer 3 is in contact with the upper surface of the N-type light doped region 2, the lower surface of the first groove 9 is in contact with the upper surface of the metalized drain electrode 1, the first groove 9 is filled with a first oxidation layer 10, a polysilicon field plate 11 is arranged in the first oxidation layer 10, and the polysilicon field plate 11 is in direct contact with the upper surface of the metalized drain electrode 1; the first groove 9 penetrates through the N-type lightly doped region 2 and the N-type forward field stop layer 3 vertically and upwards in sequence from the upper surface of the metalized drain 1 and extends into the N-type drift region 4; the upper surface of the N-type drift region 4 is a front structure, and the front structure includes: the N-type reverse field stop layer 5, the P-type body region 6, the second groove 12 and the P-type buried layer 13; the upper surface of the N-type reverse field stop layer 5 is in contact with the lower surface of the P-type body region 6; the upper surface of the P-type body region 6 is provided with an N-type source region 8 and a P-type contact region 7, the N-type source region 8 is adjacent to the P-type contact region 7, and the upper surfaces of the N-type source region 8 and the P-type contact region 7 are both contacted with the lower surface of the metalized source electrode 16; the P-type buried layer 13 is located right below the second trench 12 and directly contacts the second trench 12; the upper surface of the second trench 12 is in contact with the lower surface of the metalized source 16; the second trench 12 is filled with a second oxide layer 14, the second oxide layer 14 is provided with a polysilicon gate electrode 15, the second oxide layer 14 is spaced between the polysilicon gate electrode 15 and a metalized source 16, and the depth of the lower surface of the polysilicon gate electrode 15 is greater than the junction depth of the P-type body region 6; the second trench 12 extends from the lower surface of the metalized source 16 vertically and downwardly through the N-type source region 8, the P-type body region 6 and the N-type reverse field stop layer 5 in sequence into the N-type drift region 4.
Preferably, the lower surface of the P-type buried layer 13 is in direct contact with the upper surface of the first trench 9.
Preferably, the silicon material in the device is replaced by a silicon carbide, gallium arsenide, indium phosphide or silicon germanium semiconductor material.
The invention has the beneficial effects that: compared with the prior structure, the structure provided by the invention has reverse blocking capability, and meanwhile, the punch-through effect of an electric field in the drift region is prevented by the field stop layer, so that the thickness of the drift region is reduced, and the device can obtain lower on-resistance.
Drawings
FIG. 1 is a schematic diagram of a bi-directional switch constructed with two MOSFETs connected in anti-parallel;
FIG. 2 is a schematic diagram of a bi-directional switch formed by two MOSFETs connected in series;
fig. 3 is a schematic cross-sectional view of a reverse blocking power MOSFET according to the present invention.
The structure of the transistor comprises a metalized drain electrode 1, an N-type lightly doped region 2, an N-type forward field stop layer 3, an N-type drift region 4, an N-type reverse field stop layer 5, a P-type body region 6, a P-type contact region 7, an N-type source region 8, a first groove 9, a first oxide layer 10, a polysilicon field plate 11, a second groove 12, a P-type buried layer 13, a second oxide layer 14, a polysilicon gate electrode 15 and a metalized source electrode 16.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Example 1
A reverse resistance type power MOSFET device comprises a metalized drain electrode 1, an N-type drift region 4 and a metalized source electrode 16 which are sequentially stacked from bottom to top; the lower surface of the N-type drift region 4 is a back structure, and the back structure includes: the N-type light doped region 2, the N-type forward field stop layer 3 and the first groove 9, wherein the lower surface of the N-type light doped region 2 is in Schottky contact with the upper surface of the metalized drain electrode 1, the lower surface of the N-type forward field stop layer 3 is in contact with the upper surface of the N-type light doped region 2, the lower surface of the first groove 9 is in contact with the upper surface of the metalized drain electrode 1, the first groove 9 is filled with a first oxidation layer 10, a polysilicon field plate 11 is arranged in the first oxidation layer 10, and the polysilicon field plate 11 is in direct contact with the upper surface of the metalized drain electrode 1; the first groove 9 penetrates through the N-type lightly doped region 2 and the N-type forward field stop layer 3 vertically and upwards in sequence from the upper surface of the metalized drain 1 and extends into the N-type drift region 4; the upper surface of the N-type drift region 4 is a front structure, and the front structure includes: the N-type reverse field stop layer 5, the P-type body region 6, the second groove 12 and the P-type buried layer 13; the upper surface of the N-type reverse field stop layer 5 is in contact with the lower surface of the P-type body region 6; the upper surface of the P-type body region 6 is provided with an N-type source region 8 and a P-type contact region 7, the N-type source region 8 is adjacent to the P-type contact region 7, and the upper surfaces of the N-type source region 8 and the P-type contact region 7 are both contacted with the lower surface of the metalized source electrode 16; the P-type buried layer 13 is located right below the second trench 12 and directly contacts the second trench 12; the upper surface of the second trench 12 is in contact with the lower surface of the metalized source 16; the second trench 12 is filled with a second oxide layer 14, the second oxide layer 14 is provided with a polysilicon gate electrode 15, the second oxide layer 14 is spaced between the polysilicon gate electrode 15 and a metalized source 16, and the depth of the lower surface of the polysilicon gate electrode 15 is greater than the junction depth of the P-type body region 6; the second trench 12 extends from the lower surface of the metalized source 16 vertically and downwardly through the N-type source region 8, the P-type body region 6 and the N-type reverse field stop layer 5 in sequence into the N-type drift region 4.
The working principle of the embodiment is as follows:
the reverse-blocking power MOSFET of this example corresponds to a trench gate MOSFET in series with a schottky junction, and the electrode connection method when conducting in the forward direction is: the metalized source 16 is grounded, the metalized drain 1 is connected with high potential, and the polysilicon gate electrode 15 is connected with high potential. When a forward bias voltage applied by the polysilicon gate electrode 15 reaches a threshold voltage, an inversion channel is formed in the P-type body region 6 near the sidewall of the second oxide layer 14; meanwhile, when a forward bias voltage is applied to the metalized drain 1, the contact barrier of the schottky contact is lowered, and electrons flow from the N-type lightly doped region 2 to the metalized drain 1. Therefore, electrons are injected as carriers from N-type source region 8 into N-type drift region 4 through the inversion channel in P-type body region 6 and N-type reverse field stop layer 5, and then flow to metalized drain 1 through N-type forward field stop layer 3 and N-type lightly doped region 2, thereby forming a forward conduction current.
The reverse-blocking power MOSFET of this example corresponds to a trench gate MOSFET in series with a schottky junction, and the electrode connection method at the time of forward blocking is: the metalized source 16 is grounded, the polysilicon gate electrode 15 is grounded, and the metalized drain 1 is connected with high potential. At this time, the PN junction between the P-type body region 6 and the N-type reverse field stop layer 5 is resistant to voltage, and the depletion region extends from the N-type reverse field stop layer 5 to the N-type drift region 4, and terminates at the N-type forward field stop layer 3. The thickness of the N-type drift region 4 is controlled while punch-through breakdown between the schottky junctions from the body region of the source terminal to the drain terminal does not occur. In addition, the P-type buried layer 13 can form a transverse electric field with the N-type drift region 4, so that the withstand voltage of the device in the forward blocking process is further improved; meanwhile, the P-type buried layer 13 is located at the bottom of the second trench 12, so that the bottom of the second trench 12 can be prevented from being broken down, and the reliability of the device is improved.
The reverse blocking power MOSFET of this example is equivalent to a trench gate MOSFET in series schottky junction, and the electrode connection method at the time of reverse blocking is: the metalized source 16 is connected with high potential, the polysilicon gate electrode 15 is grounded, and the metalized drain 1 is grounded. At this time, the schottky junction is resistant to voltage, and the depletion region diffuses from the N-type lightly doped region 2 to the N-type drift region 4 and terminates at the N-type reverse field stop layer 5. The thickness of the N-type drift region 4 is controlled while punch-through breakdown between the schottky junctions from the body region of the source terminal to the drain terminal does not occur. In addition, the first oxide layer 10 and the polysilicon field plate 11 form a metal-oxide layer-semiconductor (MOS) capacitor, and when the Schottky junction is resistant to voltage, a transverse electric field is introduced into the MOS capacitor to assist the depletion of the N-type forward field stop layer 3, so that the electric field intensity at the Schottky junction is reduced, and the voltage resistance of the device is improved.
According to the reverse-resistance power MOSFET provided by the invention, silicon materials in devices are replaced by silicon carbide, gallium arsenide, indium phosphide or silicon germanium semiconductor materials.
Example 2
The present embodiment differs from embodiment 2 in that: the lower surface of the P-type buried layer 13 is in direct contact with the upper surface of the first trench 9.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (2)

1. A reverse-resistance power MOSFET device is characterized by comprising a metalized drain electrode (1), an N-type drift region (4) and a metalized source electrode (16) which are sequentially stacked from bottom to top; the lower surface of the N-type drift region (4) is a back structure, and the back structure comprises: the N-type light doped region (2), the N-type forward field stop layer (3) and the first groove (9), wherein the lower surface of the N-type light doped region (2) is in Schottky contact with the upper surface of the metalized drain electrode (1), the lower surface of the N-type forward field stop layer (3) is in contact with the upper surface of the N-type light doped region (2), the lower surface of the first groove (9) is in contact with the upper surface of the metalized drain electrode (1), the first groove (9) is filled with a first oxide layer (10), a polysilicon field plate (11) is arranged in the first oxide layer (10), and the polysilicon field plate (11) is in direct contact with the upper surface of the metalized drain electrode (1); the first groove (9) penetrates through the N-type lightly doped region (2) and the N-type forward field stop layer (3) from the upper surface of the metalized drain (1) in sequence vertically and upwards and extends into the N-type drift region (4); the upper surface of the N-type drift region (4) is of a front structure, and the front structure comprises: the N-type reverse field stop layer (5), the P-type body region (6), the second groove (12) and the P-type buried layer (13); the upper surface of the N-type reverse field stop layer (5) is in contact with the lower surface of the P-type body region (6); the upper surface of the P-type body region (6) is provided with an N-type source region (8) and a P-type contact region (7), the N-type source region (8) is adjacent to the P-type contact region (7), and the upper surfaces of the N-type source region (8) and the P-type contact region (7) are both in contact with the lower surface of the metalized source electrode (16); the P-type buried layer (13) is located right below the second trench (12) and is in direct contact with the second trench (12); the upper surface of the second trench (12) is in contact with the lower surface of the metalized source (16); a second oxide layer (14) is filled in the second trench (12), a polycrystalline silicon gate electrode (15) is arranged in the second oxide layer (14), the second oxide layer (14) is arranged between the polycrystalline silicon gate electrode (15) and the metalized source (16), and the depth of the lower surface of the polycrystalline silicon gate electrode (15) is greater than the junction depth of the P-type body region (6); the second groove (12) penetrates through the N-type source region (8), the P-type body region (6) and the N-type reverse field stop layer (5) from the lower surface of the metalized source electrode (16) to extend into the N-type drift region (4) vertically and downwards in sequence.
2. A reverse resistance power MOSFET device according to claim 1, wherein: the lower surface of the P-type buried layer (13) is in direct contact with the upper surface of the first trench (9).
CN201711455406.9A 2017-12-28 2017-12-28 Reverse-resistance power MOSFET device Expired - Fee Related CN108183102B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258847A (en) * 2013-05-09 2013-08-21 电子科技大学 Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers
CN103794647A (en) * 2014-02-28 2014-05-14 电子科技大学 Bidirectional IGBT device and manufacturing method thereof
CN105914231A (en) * 2016-06-28 2016-08-31 上海华虹宏力半导体制造有限公司 Charge storage type IGBT and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258847A (en) * 2013-05-09 2013-08-21 电子科技大学 Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers
CN103794647A (en) * 2014-02-28 2014-05-14 电子科技大学 Bidirectional IGBT device and manufacturing method thereof
CN105914231A (en) * 2016-06-28 2016-08-31 上海华虹宏力半导体制造有限公司 Charge storage type IGBT and manufacturing method thereof

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