CN108178615A - 一种微波陶瓷介质烧结粉体材料、微波介质陶瓷及其应用 - Google Patents

一种微波陶瓷介质烧结粉体材料、微波介质陶瓷及其应用 Download PDF

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CN108178615A
CN108178615A CN201711458156.4A CN201711458156A CN108178615A CN 108178615 A CN108178615 A CN 108178615A CN 201711458156 A CN201711458156 A CN 201711458156A CN 108178615 A CN108178615 A CN 108178615A
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焦英训
宋锡滨
张兵
王军
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Shandong Sinocera Functional Material Co Ltd
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Abstract

本发明涉及一种微波陶瓷介质烧结粉体材料,该粉体材料是将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:(0.1~0.2):(0.05~0.1):(0.1~0.2)混合,加水后进行粉碎研磨,干燥,即得。本发明同时提供一种微波介质陶瓷,是以本发明所述粉体材料为原料,在常压、800℃~950℃条件下烧结得到。本发明提供的微波陶瓷介质烧结粉体材料采用固相法合成获得,利用该材料在800℃~950℃范围内即可烧结制作白色硼酸镁陶瓷,且工艺简单,烧结过程无需保护气氛、无需热压烧结,所得的微波介质陶瓷质地均匀,具有优异的微波介电性能。

Description

一种微波陶瓷介质烧结粉体材料、微波介质陶瓷及其应用
技术领域
本发明涉及陶瓷材料领域,具体涉及一种微波陶瓷介质烧结粉体材料以及以其为原料烧结而成的微波介质陶瓷。
背景技术
微波介质陶瓷,是指应用于微波频段电路中作为介质材料并完成一种或者多种功能的陶瓷,在现代通信中广泛应用于各种陶瓷封装以及电路基板的制作。随着微波通信的快速发展,特别是面对即将到来的5G时代,已开发的微波介质材料的εr较大、Q×f值较小,烧结温度较高,无法满足未来的应用需求,因此有必要开发低烧结温度,低介电常数、高Q×f值的微波介质材料。
更为重要的是微波陶瓷粉体的烧结温度普遍在1500℃以上,远高于导电浆料的熔融温度,现有工艺是加入诸如氧化硼之类的玻璃来降低烧结温度,然而玻璃一方面会影响材料的电性能,另一方面会导致浆料粘度过大而不利于流延加工。
发明内容
本发明的目的是克服现有技术的缺陷,提供一种低烧结温度、低介电常数、高品质因数、不添加氧化硼等玻璃助熔剂的微波陶瓷介质烧结粉体材料。
具体而言,本发明提供的粉体材料可用Mg2B2O5-BaO-SiO2-TiO2表示,具体是将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:(0.1~0.2):(0.05~0.1):(0.1~0.2)混合,加水后进行粉碎研磨,干燥,即得。
所述水的加入量优选为固体混合原料质量的4~6倍。
所述粉碎研磨可采用本领域常规的砂磨。如采用0.5~1mm锆球砂磨1~2遍。
为了确保所得粉体具有良好的分散性和均匀性,所述干燥优选为本领域常规的喷雾干燥方式。
本发明采用的氧化钡BaO、氧化硅SiO2以及氧化钛TiO2均为常见市售原料。所述Mg2B2O5粉末可由氧化镁和硼酸加工而成。
作为本发明的一种优选方案,所述Mg2B2O5粉末由如下方法制备而成:将氧化镁和硼酸以质量比1:0.8~1.5混合,加水后进行粉碎研磨,干燥,焙烧,即得。
其中,所述水的加入量优选为固体混合原料质量的4~6倍。所述粉碎研磨可采用本领域常规的砂磨或球磨。如采用0.8mm锆球砂磨1~2遍。为了确保所得粉体具有良好的分散性和均匀性,所述干燥优选为本领域常规的喷雾干燥方式。所述煅烧也采用本领域常规的焙烧方式,本发明优选其焙烧条件为在1000~1200℃下焙烧3~5小时。
采用上述优选方案制备而成的Mg2B2O5粉末与其余原料混合后,可以确保最终制得的粉体材料具有良好的综合性能。
本发明同时保护所述微波陶瓷介质烧结粉体材料在制备陶瓷中的应用。
本发明进一步保护一种微波介质陶瓷,是以本发明提供的粉体材料为原料,压制生坯(生坯规格为D10*5(直径10mm*高度5mm),压制成型压力为5MPa),在常压、800℃~950℃条件下烧结得到。所述微波介质陶瓷具有优异的电性能,经检测,其εr为4~6,Q×f>60000GHz,可应用于基板、陶瓷封装等。
本发明提供的微波陶瓷介质烧结粉体材料采用固相法合成获得,利用该材料在800℃~950℃范围内即可烧结制作白色硼酸镁陶瓷,且工艺简单,烧结过程无需保护气氛、无需热压烧结,所得的微波介质陶瓷质地均匀,具有优异的微波介电性能。
具体实施方式
以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例1
本实施例提供了一种微波陶瓷介质烧结粉体材料,是将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:0.2:0.1:0.2混合,加入固体混合原料质量5倍的水后采用0.8mm锆球砂磨2遍,喷雾干燥,即得。
其中,所述Mg2B2O5粉末是由如下方法制备而成:将氧化镁和硼酸以质量比1:0.8混合,加入固体混合原料质量5倍的水后采用0.8mm锆球砂磨2遍,喷雾干燥,在1100℃下焙烧4小时,即得。
实施例2
本实施例提供了一种微波陶瓷介质烧结粉体材料,与实施例1相比,区别仅在于:将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:0.1:0.1:0.2混合。
其中,所述Mg2B2O5粉末是由如下方法制备而成:将氧化镁和硼酸以质量比1:1.1混合,加入固体混合原料质量5倍的水后采用0.8mm锆球砂磨2遍,喷雾干燥,在1100℃下焙烧4小时,即得。
实施例3
本实施例提供了一种微波陶瓷介质烧结粉体材料,与实施例1相比,区别仅在于:将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:0.2:0.1:0.1混合。
其中,所述Mg2B2O5粉末是由如下方法制备而成:将氧化镁和硼酸以质量比1∶1.3混合,加入固体混合原料质量5倍的水后采用0.8mm锆球砂磨2遍,喷雾干燥,在1100℃下焙烧4小时,即得。
实施例4
本实施例提供了一种微波陶瓷介质烧结粉体材料,与实施例1相比,区别仅在于:将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:0.1:0.1:0.1混合。
其中,所述Mg2B2O5粉末是由如下方法制备而成:将氧化镁和硼酸以质量比1:1.5混合,加入固体混合原料质量5倍的水后采用0.8mm锆球砂磨2遍,喷雾干燥,在1100℃下焙烧4小时,即得。
实施例5
本实施例提供了一种微波陶瓷,是以实施例1提供的粉体为原料,压坯,在常压、720℃下烧结得到。
经检测,该微波陶瓷的εr为4.0,Q×f为63000GHz。
实施例6
本实施例提供了一种微波陶瓷,是以实施例2提供的粉体为原料,压坯,在常压、790℃下烧结得到。
经检测,该微波陶瓷的εr为4.5,Q×f为65000GHz。
实施例7
本实施例提供了一种微波陶瓷,是以实施例3提供的粉体为原料,压坯,在常压、850℃下烧结得到。
经检测,该微波陶瓷的εr为5.0,Q×f为70000GHz。
实施例8
本实施例提供了一种微波陶瓷,是以实施例4提供的粉体为原料,压坯,在常压、900℃下烧结得到。
经检测,该微波陶瓷的εr为6.0,Q×f为72000GHz。
虽然,上文中已经用一般性说明、具体实施方式及试验,对本发明作了详尽的描述,但在本发明基础上,可以对之作一些修改或改进,这对本领域技术人员而言是显而易见的。因此,在不偏离本发明精神的基础上所做的这些修改或改进,均属于本发明要求保护的范围。

Claims (10)

1.一种微波陶瓷介质烧结粉体材料,其特征在于,将Mg2B2O5粉末、BaO、SiO2以及TiO2以质量比1:(0.1~0.2):(0.05~0.1):(0.1~0.2)混合,加水后进行粉碎研磨,干燥,即得。
2.根据权利要求1所述的粉体材料,其特征在于,所述水的加入量为固体混合原料质量的4~6倍。
3.根据权利要求1或2所述的粉体材料,其特征在于,所述粉碎研磨采用0.5~1mm锆球砂磨1~2遍。
4.根据权利要求1~3任意一项所述的粉体材料,其特征在于,所述干燥为喷雾干燥。
5.根据权利要求1~4任意一项所述的粉体材料,其特征在于,所述Mg2B2O5粉末由如下方法制备而成:将氧化镁和硼酸以质量比1:0.8~1.5混合,加水后进行粉碎研磨,干燥,焙烧,即得。
6.根据权利要求5所述的粉体材料,其特征在于,所述水的加入量为固体混合原料质量的4~6倍;所述粉碎研磨采用0.5~1mm锆球砂磨1~2遍;所述干燥为喷雾干燥。
7.根据权利要求5或6所述的粉体材料,其特征在于,所述焙烧为在1000~1200℃下焙烧3~5小时。
8.权利要求1~7任意一项所述粉体材料在制备陶瓷中的应用。
9.一种微波介质陶瓷,其特征在于,以权利要求1~7任意一项所述粉体材料为原料,压制成坯,在常压、800℃~950℃条件下烧结得到。
10.权利要求9所述微波介质陶瓷在制备基板和/或陶瓷封装中的应用。
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CN112573894A (zh) * 2020-12-08 2021-03-30 中铭瓷(苏州)纳米粉体技术有限公司 一种用于芯片封装键合低温陶瓷烧结粉体工艺
CN114573344A (zh) * 2022-03-25 2022-06-03 西安工业大学 一种两相复合微波介质陶瓷材料及其制备方法和应用

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