CN108172684A - 相变化记忆体及其制造方法 - Google Patents
相变化记忆体及其制造方法 Download PDFInfo
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- CN108172684A CN108172684A CN201711476762.9A CN201711476762A CN108172684A CN 108172684 A CN108172684 A CN 108172684A CN 201711476762 A CN201711476762 A CN 201711476762A CN 108172684 A CN108172684 A CN 108172684A
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- 230000015654 memory Effects 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000008859 change Effects 0.000 claims abstract description 63
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 230000001771 impaired effect Effects 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 150
- 230000012447 hatching Effects 0.000 description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910010037 TiAlN Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- -1 ramet Chemical compound 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012774 insulation material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 208000035126 Facies Diseases 0.000 description 2
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 description 2
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- CBJZJSBVCUZYMQ-UHFFFAOYSA-N antimony germanium Chemical compound [Ge].[Sb] CBJZJSBVCUZYMQ-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201711476762.9A CN108172684B (zh) | 2015-12-16 | 2015-12-16 | 相变化记忆体及其制造方法 |
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CN201711476762.9A CN108172684B (zh) | 2015-12-16 | 2015-12-16 | 相变化记忆体及其制造方法 |
CN201510944666.7A CN105428529B (zh) | 2015-12-16 | 2015-12-16 | 相变化记忆体的制造方法 |
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CN201510944666.7A Division CN105428529B (zh) | 2015-12-16 | 2015-12-16 | 相变化记忆体的制造方法 |
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CN108172684A true CN108172684A (zh) | 2018-06-15 |
CN108172684B CN108172684B (zh) | 2021-01-05 |
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CN201711476762.9A Active CN108172684B (zh) | 2015-12-16 | 2015-12-16 | 相变化记忆体及其制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110164903A (zh) * | 2019-05-23 | 2019-08-23 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体及其制造方法 |
CN111769195A (zh) * | 2020-07-13 | 2020-10-13 | 上海集成电路研发中心有限公司 | 一种相变存储器单元及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101271862A (zh) * | 2007-03-19 | 2008-09-24 | 财团法人工业技术研究院 | 存储器元件及其制造方法 |
CN103137862A (zh) * | 2011-12-02 | 2013-06-05 | 旺宏电子股份有限公司 | 存储器装置及其制造方法 |
CN103594619A (zh) * | 2012-08-13 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7504652B2 (en) * | 2005-07-13 | 2009-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase change random access memory |
TWI354387B (en) * | 2007-11-16 | 2011-12-11 | Ind Tech Res Inst | Phase-change memory element and method for fabrica |
KR20100076274A (ko) * | 2008-12-26 | 2010-07-06 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 및 그 제조방법 |
CN103022347B (zh) * | 2011-09-27 | 2016-03-09 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
-
2015
- 2015-12-16 CN CN201510944666.7A patent/CN105428529B/zh active Active
- 2015-12-16 CN CN201711476762.9A patent/CN108172684B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101271862A (zh) * | 2007-03-19 | 2008-09-24 | 财团法人工业技术研究院 | 存储器元件及其制造方法 |
CN103137862A (zh) * | 2011-12-02 | 2013-06-05 | 旺宏电子股份有限公司 | 存储器装置及其制造方法 |
CN103594619A (zh) * | 2012-08-13 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110164903A (zh) * | 2019-05-23 | 2019-08-23 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体及其制造方法 |
CN110164903B (zh) * | 2019-05-23 | 2023-05-26 | 北京时代全芯存储技术股份有限公司 | 相变化记忆体及其制造方法 |
CN111769195A (zh) * | 2020-07-13 | 2020-10-13 | 上海集成电路研发中心有限公司 | 一种相变存储器单元及其制备方法 |
CN111769195B (zh) * | 2020-07-13 | 2024-05-14 | 上海集成电路研发中心有限公司 | 一种相变存储器单元及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105428529B (zh) | 2018-04-13 |
CN108172684B (zh) | 2021-01-05 |
CN105428529A (zh) | 2016-03-23 |
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Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Applicant after: Jiangsu Times Full Core Storage Technology Co., Ltd. Applicant after: Jiangsu times core semiconductor Co., Ltd. Applicant after: The British Vigin Islands manufacturer epoch Quan Xin Science and Technology Ltd. Address before: 223300 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Applicant before: Jiangsu times all core storage technology Co., Ltd. Applicant before: Jiangsu times core semiconductor Co., Ltd. Applicant before: The British Vigin Islands manufacturer epoch Quan Xin Science and Technology Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210812 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: 223300 No. 601 East Changjiang Road, Huaiyin District, Huaian City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN Ltd. |
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TR01 | Transfer of patent right |