CN108172657B - 一种黑硅太阳能电池及其制备方法 - Google Patents
一种黑硅太阳能电池及其制备方法 Download PDFInfo
- Publication number
- CN108172657B CN108172657B CN201810001986.2A CN201810001986A CN108172657B CN 108172657 B CN108172657 B CN 108172657B CN 201810001986 A CN201810001986 A CN 201810001986A CN 108172657 B CN108172657 B CN 108172657B
- Authority
- CN
- China
- Prior art keywords
- preparation
- black silicon
- layer
- solar cell
- spiro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 67
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052796 boron Inorganic materials 0.000 claims abstract description 39
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 39
- 239000002131 composite material Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 41
- 238000000137 annealing Methods 0.000 claims description 38
- 238000004528 spin coating Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 13
- 239000000725 suspension Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000002105 nanoparticle Substances 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 230000011987 methylation Effects 0.000 claims description 7
- 238000007069 methylation reaction Methods 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000013404 process transfer Methods 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 84
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810001986.2A CN108172657B (zh) | 2018-01-02 | 2018-01-02 | 一种黑硅太阳能电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810001986.2A CN108172657B (zh) | 2018-01-02 | 2018-01-02 | 一种黑硅太阳能电池及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108172657A CN108172657A (zh) | 2018-06-15 |
CN108172657B true CN108172657B (zh) | 2019-10-22 |
Family
ID=62517070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810001986.2A Active CN108172657B (zh) | 2018-01-02 | 2018-01-02 | 一种黑硅太阳能电池及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108172657B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108550704B (zh) * | 2018-06-21 | 2021-10-29 | 江苏日御光伏新材料科技有限公司 | 一种Si-P3HT杂化太阳能电池及其制备方法 |
CN108767119B (zh) * | 2018-06-22 | 2022-01-04 | 江苏启科能源科技有限公司 | 一种有机无机杂化光伏电池及其制备方法 |
CN109346610A (zh) * | 2018-09-18 | 2019-02-15 | 张军 | 一种钙钛矿太阳能电池及其制备方法 |
CN114300551A (zh) * | 2021-12-03 | 2022-04-08 | 中国电子科技集团公司第四十八研究所 | 石墨烯/等离子激元黑硅近红外探测器结构及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130044850A (ko) * | 2011-10-25 | 2013-05-03 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
EP2846371A1 (en) * | 2013-09-10 | 2015-03-11 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Inverted solar cell and process for producing the same |
-
2018
- 2018-01-02 CN CN201810001986.2A patent/CN108172657B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN108172657A (zh) | 2018-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108172657B (zh) | 一种黑硅太阳能电池及其制备方法 | |
CN104022225B (zh) | 一种全溶液法制备的高效低成本铜铟镓硒/钙钛矿双结太阳能光电池 | |
CN109216509A (zh) | 一种叉指型背接触异质结太阳电池制备方法 | |
CN107946384B (zh) | 一种硅-pedot:pss杂化太阳能电池及其制备方法 | |
CN109004053A (zh) | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 | |
CN108832002A (zh) | 一种基于pva修饰空穴传输层的钙钛矿太阳能电池 | |
CN104157789A (zh) | 一种新型双面薄膜太阳电池及其工业制造方法 | |
CN106098820B (zh) | 一种新型硒化锑薄膜太阳能电池及其制备方法 | |
CN109888109A (zh) | 一种量子点修饰的双体异质结有机太阳能电池及其制备方法 | |
CN106876595B (zh) | 一种n型硅异质结太阳能电池及其制备方法 | |
CN114335348A (zh) | 一种pn异质结硒化锑/钙钛矿太阳能电池及其制备方法 | |
CN207441751U (zh) | 一种同质结钙钛矿薄膜太阳能电池 | |
CN115148838B (zh) | 太阳电池及生产方法、光伏组件 | |
CN106684179A (zh) | 一种硒化锑双结薄膜太阳能电池及其制备方法 | |
CN101976727A (zh) | 一种具有掺杂抗氧化剂的活性层的有机光伏电池及其制备方法 | |
CN114335216B (zh) | 一种四端叠层钙钛矿太阳能电池及其制备方法 | |
WO2023098038A1 (zh) | 一种钙钛矿太阳能电池的柱状电极结构的制备方法 | |
CN108878594A (zh) | 一种硅异质结光伏电池及其制造方法 | |
CN109817811A (zh) | 免退火、免反溶剂的钙钛矿光伏器件及其制备方法 | |
CN101937973A (zh) | 一种具有交联结构活性层的有机光伏电池及其制备方法 | |
CN108695435A (zh) | 一种基于超声波退火工艺的有机太阳能电池及其制备方法 | |
CN108336181B (zh) | 一种太阳能电池及其制备方法 | |
CN108281512B (zh) | 一种单晶硅太阳能电池及其制造方法 | |
CN108232024B (zh) | 一种太阳能电池及其制备方法 | |
CN109192798B (zh) | P型单晶硅hit光伏电池及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190916 Address after: 322100 Zhejiang, Jinhua, Dongyang, Jiangbei street, 1 New Village Applicant after: New Mstar Technology Ltd in Dongyang Address before: 215000 Suzhou Industrial Park, Suzhou City, Jiangsu Province, Room 903, 6 Business Travel Building, 381 East of Suzhou Avenue Applicant before: Suzhou billion Photoelectric Technology Co., Ltd. Billiton |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211213 Address after: No.86 Lingbo Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province Patentee after: YANGZHOU JINGYING PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 322100 Zhejiang, Jinhua, Dongyang, Jiangbei street, 1 New Village Patentee before: DONGYANG TEYI NEW MATERIAL TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right |