CN108878594A - 一种硅异质结光伏电池及其制造方法 - Google Patents
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Abstract
本发明涉及一种硅异质结光伏电池及其制造方法，该方法包括以下步骤：对所述N型单晶硅片进行双面制绒处理；在所述N型单晶硅片的上表面依次沉积第一本征非晶硅层、第一P型非晶硅层、第二P型非晶硅层、第三P型非晶硅层、第四P型非晶硅层；接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层、第一N型非晶硅层、第二N型非晶硅层、第三N型非晶硅层以及第四N型非晶硅层；接着在所述第四P型非晶硅层上沉积第一透明导电层，接着在所述第四N型非晶硅层上沉积第二透明导电层；接着在所述第一透明导电层上沉积正面电极，并在所述第二透明导电层上沉积背面电极。
Description
技术领域
本发明涉及光伏电池技术领域，特别是涉及一种硅异质结光伏电池及其制造方法。
背景技术
石化能源作为不可再生能源，由于大量的使用消耗导致石化能源逐渐枯竭，新型可再生能源如太阳能、风能逐渐兴起。太阳能电池作为一种直接将太阳能转换为电能的装置，具有装配形式多样、取之不尽、用之不竭、绿色无污染等优点，近年来得到了大力发展。太阳能电池的种类繁多，具体包括单晶硅太阳能电池、多晶硅太阳能电池、硅异质结太阳能电池、非晶硅薄膜太阳能电池、砷化镓太阳能电池、铜铟镓硒系太阳能电池、碲化镉太阳能电池、染料敏化电池、有机太阳能电池、有机无机杂化太阳能电池、钙钛矿太阳能电池等种类的太阳能电池。其中，在硅异质结太阳能电池的发展历程中，通常是改善硅基底的掺杂类型、硅基底的表面形貌、栅极的制备工艺、透明导电层的退火工艺以及电池的具体结构等工艺，以提高硅异质结太阳能电池的光电转换效率。
发明内容
本发明的目的是克服上述现有技术的不足，提供一种硅异质结光伏电池及其制造方法。
为实现上述目的，本发明采用的技术方案是：
一种硅异质结光伏电池的制造方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上表面和下表面均形成类金字塔微结构；
2)接着对所述N型单晶硅片进行甲基化处理，以在所述N型单晶硅片的上下表面形成Si-CH3键；
3)接着在所述N型单晶硅片的上表面沉积第一本征非晶硅层，接着在所述第一本征非晶硅层上沉积第一P型非晶硅层；
4)接着在第一P型非晶硅层上沉积第二P型非晶硅层，其中，所述第二P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度，且所述第二P型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度；
5)接着在第二P型非晶硅层上沉积第三P型非晶硅层，其中，所述第三P型非晶硅层的掺杂浓度大于所述第二P型非晶硅层的掺杂浓度，且所述第三P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度；
6)接着在第三P型非晶硅层上沉积第四P型非晶硅层，其中，所述第四P型非晶硅层的掺杂浓度大于所述第一P型非晶硅层的掺杂浓度；
7)接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层、第一N型非晶硅层、第二N型非晶硅层、第三N型非晶硅层以及第四N型非晶硅层，其中，所述第二N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，所述第二N型非晶硅层的掺杂浓度以及所述第三N型非晶硅层的掺杂浓度小于所述第一N型非晶硅层的掺杂浓度，所述第三N型非晶硅层的掺杂浓度大于所述第二N型非晶硅层的掺杂浓度，所述第四N型非晶硅层的掺杂浓度大于所述第一N型非晶硅层的掺杂浓度；
8)接着在所述第四P型非晶硅层上沉积第一透明导电层，接着在所述第四N型非晶硅层上沉积第二透明导电层；
9)接着在所述第一透明导电层上沉积正面电极，并在所述第二透明导电层上沉积背面电极。
作为优选，在所述步骤(2)中，首先将所述N型单晶硅片在HF溶液中处理5-10分钟，接着将该N型单晶硅片浸入饱和五氯化磷的氯苯溶液中并在110-120℃下保持2-4小时，然后将该N型单晶硅片浸入甲基氯化镁的四氢呋喃溶液中并在60-80℃下保持9-12小时，最后清洗该N型单晶硅片。
作为优选，在所述步骤(3)中，所述第一本征非晶硅层的厚度为5-8纳米，所述第一P型非晶硅层的厚度为1-2纳米，所述第一P型非晶硅层的掺杂浓度为3×1019cm-3-2×1020cm-3。
作为优选，在所述步骤(4)-(6)中，所述第二P型非晶硅层的厚度为2-3纳米，所述第三P型非晶硅层的厚度为1-2纳米，第四P型非晶硅层的厚度为1.5-2.5纳米，所述第二P型非晶硅层的掺杂浓度为5×1018cm-3-6×1019cm-3，所述N型单晶硅片的掺杂浓度为1017cm-3-3×1018cm-3，所述第三P型非晶硅层的掺杂浓度为1019cm-3-1020cm-3，所述第四P型非晶硅层的掺杂浓度为8×1019cm-3-6×1020cm-3。
作为优选，在所述步骤(7)中，所述第二本征非晶硅层的厚度为5-10纳米，所述第一N型非晶硅层的厚度为1-2纳米，所述第二N型非晶硅层的厚度为2.5-3.5纳米，所述第三N型非晶硅层的厚度为2-3纳米，所述第四N型非晶硅层的厚度为1-2纳米。
作为优选，在所述步骤(7)中，所述第一N型非晶硅层的掺杂浓度为5×1019cm-3-6×1020cm-3,所述第二N型非晶硅层的掺杂浓度为8×1018cm-3-9×1019cm-3，所述第三P型非晶硅层的掺杂浓度为2×1019cm-3-2×1020cm-3，所述第四P型非晶硅层的掺杂浓度为1020cm-3-1021cm-3。
作为优选，在所述步骤(8)中，所述第一透明导电层和所述第二透明导电层的厚度为200-600纳米，所述第一透明导电层和所述第二透明导电层的材质为AZO、ITO、FTO、石墨烯、银纳米线以及碳纳米管中的一种或多种。
作为优选，在所述步骤(9)中，所述正面电极和所述背面电极的厚度为300-800纳米，所述正面电极和所述背面电极的材质为银、铜、金、钛、钯、铝中的一种或多种。
本发明还提出一种硅异质结光伏电池，其采用上述方法制备形成的。
本发明与现有技术相比具有下列优点：
本发明的硅异质结光伏电池的制造过程中，选择N型单晶硅片为硅基底，通过优化N型单晶硅片的上下表面的P型非晶硅层和N型非晶硅层的层数、各子层的厚度以及各子层的掺杂浓度的大小关系以及具体数值，有利于该硅异质结光伏电池中的电子和空穴的分离与传输，进而有效提高了该硅异质结光伏电池的短路电流和填充因子，进而提高该硅异质结光伏电池的光电转换效率。同时本发明的制造方法简单易行，且与现有的制备工艺相兼容。
附图说明
图1为本发明的硅异质结光伏电池的结构示意图。
具体实施方式
本发明提出一种硅异质结光伏电池的制造方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上表面和下表面均形成类金字塔微结构。
2)接着对所述N型单晶硅片进行甲基化处理，以在所述N型单晶硅片的上下表面形成Si-CH3键，具体步骤为：首先将所述N型单晶硅片在HF溶液中处理5-10分钟，接着将该N型单晶硅片浸入饱和五氯化磷的氯苯溶液中并在110-120℃下保持2-4小时，然后将该N型单晶硅片浸入甲基氯化镁的四氢呋喃溶液中并在60-80℃下保持9-12小时，最后清洗该N型单晶硅片。
3)接着在所述N型单晶硅片的上表面沉积第一本征非晶硅层，接着在所述第一本征非晶硅层上沉积第一P型非晶硅层，其中，所述第一本征非晶硅层的厚度为5-8纳米，所述第一P型非晶硅层的厚度为1-2纳米，所述第一P型非晶硅层的掺杂浓度为3×1019cm-3-2×1020cm-3。
4)接着在第一P型非晶硅层上沉积第二P型非晶硅层，其中，所述第二P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度，且所述第二P型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度。
5)接着在第二P型非晶硅层上沉积第三P型非晶硅层，其中，所述第三P型非晶硅层的掺杂浓度大于所述第二P型非晶硅层的掺杂浓度，且所述第三P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度。
6)接着在第三P型非晶硅层上沉积第四P型非晶硅层，其中，所述第四P型非晶硅层的掺杂浓度大于所述第一P型非晶硅层的掺杂浓度。
在所述步骤(4)-(6)中，所述第二P型非晶硅层的厚度为2-3纳米，所述第三P型非晶硅层的厚度为1-2纳米，第四P型非晶硅层的厚度为1.5-2.5纳米，所述第二P型非晶硅层的掺杂浓度为5×1018cm-3-6×1019cm-3，所述N型单晶硅片的掺杂浓度为1017cm-3-3×1018cm-3，所述第三P型非晶硅层的掺杂浓度为1019cm-3-1020cm-3，所述第四P型非晶硅层的掺杂浓度为8×1019cm-3-6×1020cm-3。
7)接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层、第一N型非晶硅层、第二N型非晶硅层、第三N型非晶硅层以及第四N型非晶硅层，其中，所述第二N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，所述第二N型非晶硅层的掺杂浓度以及所述第三N型非晶硅层的掺杂浓度小于所述第一N型非晶硅层的掺杂浓度，所述第三N型非晶硅层的掺杂浓度大于所述第二N型非晶硅层的掺杂浓度，所述第四N型非晶硅层的掺杂浓度大于所述第一N型非晶硅层的掺杂浓度，其中，所述第二本征非晶硅层的厚度为5-10纳米，所述第一N型非晶硅层的厚度为1-2纳米，所述第二N型非晶硅层的厚度为2.5-3.5纳米，所述第三N型非晶硅层的厚度为2-3纳米，所述第四N型非晶硅层的厚度为1-2纳米，所述第一N型非晶硅层的掺杂浓度为5×1019cm-3-6×1020cm-3,所述第二N型非晶硅层的掺杂浓度为8×1018cm-3-9×1019cm-3，所述第三P型非晶硅层的掺杂浓度为2×1019cm-3-2×1020cm-3，所述第四P型非晶硅层的掺杂浓度为1020cm-3-1021cm-3。
8)接着在所述第四P型非晶硅层上沉积第一透明导电层，接着在所述第四N型非晶硅层上沉积第二透明导电层，所述第一透明导电层和所述第二透明导电层的厚度为200-600纳米，所述第一透明导电层和所述第二透明导电层的材质为AZO、ITO、FTO、石墨烯、银纳米线以及碳纳米管中的一种或多种。
9)接着在所述第一透明导电层上沉积正面电极，并在所述第二透明导电层上沉积背面电极，其中，所述正面电极和所述背面电极的厚度为300-800纳米，所述正面电极和所述背面电极的材质为银、铜、金、钛、钯、铝中的一种或多种。
如图1所示，本发明提出一种硅异质结光伏电池，所述硅异质结光伏电池包括N型单晶硅片1，在所述N型单晶硅片1的上表面依次设置有第一本征非晶硅层2、第一P型非晶硅层31、第二P型非晶硅层32、第三P型非晶硅层33、第四P型非晶硅层34、第一透明导电层4以及正面电极5，在所述N型单晶硅片1的下表面依次设置有第二本征非晶硅层6、第一N型非晶硅层71、第二N型非晶硅层72、第三N型非晶硅层73、第四N型非晶硅层74、第二透明导电层8以及背面电极9。
实施例1：
一种硅异质结光伏电池的制造方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上表面和下表面均形成类金字塔微结构。
2)接着对所述N型单晶硅片进行甲基化处理，以在所述N型单晶硅片的上下表面形成Si-CH3键，具体步骤为：首先将所述N型单晶硅片在HF溶液中处理8分钟，接着将该N型单晶硅片浸入饱和五氯化磷的氯苯溶液中并在115℃下保持3小时，然后将该N型单晶硅片浸入甲基氯化镁的四氢呋喃溶液中并在75℃下保持10小时，最后清洗该N型单晶硅片。
3)接着在所述N型单晶硅片的上表面沉积第一本征非晶硅层，接着在所述第一本征非晶硅层上沉积第一P型非晶硅层，其中，所述第一本征非晶硅层的厚度为6纳米，所述第一P型非晶硅层的厚度为1.5纳米，所述第一P型非晶硅层的掺杂浓度为6×1019cm-3。
4)接着在第一P型非晶硅层上沉积第二P型非晶硅层，其中，所述第二P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度，且所述第二P型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度。
5)接着在第二P型非晶硅层上沉积第三P型非晶硅层，其中，所述第三P型非晶硅层的掺杂浓度大于所述第二P型非晶硅层的掺杂浓度，且所述第三P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度。
6)接着在第三P型非晶硅层上沉积第四P型非晶硅层，其中，所述第四P型非晶硅层的掺杂浓度大于所述第一P型非晶硅层的掺杂浓度。
在所述步骤(4)-(6)中，所述第二P型非晶硅层的厚度为2.5纳米，所述第三P型非晶硅层的厚度为1.5纳米，第四P型非晶硅层的厚度为2纳米，所述第二P型非晶硅层的掺杂浓度为8×1018cm-3，所述N型单晶硅片的掺杂浓度为5×1017cm-3，所述第三P型非晶硅层的掺杂浓度为3×1019cm-3，所述第四P型非晶硅层的掺杂浓度为2×1020cm-3。
7)接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层、第一N型非晶硅层、第二N型非晶硅层、第三N型非晶硅层以及第四N型非晶硅层，其中，所述第二N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，所述第二N型非晶硅层的掺杂浓度以及所述第三N型非晶硅层的掺杂浓度小于所述第一N型非晶硅层的掺杂浓度，所述第三N型非晶硅层的掺杂浓度大于所述第二N型非晶硅层的掺杂浓度，所述第四N型非晶硅层的掺杂浓度大于所述第一N型非晶硅层的掺杂浓度，其中，所述第二本征非晶硅层的厚度为8纳米，所述第一N型非晶硅层的厚度为1.5纳米，所述第二N型非晶硅层的厚度为3纳米，所述第三N型非晶硅层的厚度为2.5纳米，所述第四N型非晶硅层的厚度为1.5纳米，所述第一N型非晶硅层的掺杂浓度为3×1020cm-3,所述第二N型非晶硅层的掺杂浓度为2×1019cm-3，所述第三P型非晶硅层的掺杂浓度为5×1019cm-3，所述第四P型非晶硅层的掺杂浓度为6×1020cm-3。
8)接着在所述第四P型非晶硅层上沉积第一透明导电层，接着在所述第四N型非晶硅层上沉积第二透明导电层，所述第一透明导电层和所述第二透明导电层的厚度为400纳米，所述第一透明导电层和所述第二透明导电层的材质为AZO、ITO、FTO、石墨烯、银纳米线以及碳纳米管中的一种。
9)接着在所述第一透明导电层上沉积正面电极，并在所述第二透明导电层上沉积背面电极，其中，所述正面电极和所述背面电极的厚度为600纳米，所述正面电极和所述背面电极的材质为银。
该硅异质结光伏电池的效率为24.7％。
实施例2
一种硅异质结光伏电池的制造方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上表面和下表面均形成类金字塔微结构。
2)接着对所述N型单晶硅片进行甲基化处理，以在所述N型单晶硅片的上下表面形成Si-CH3键，具体步骤为：首先将所述N型单晶硅片在HF溶液中处理10分钟，接着将该N型单晶硅片浸入饱和五氯化磷的氯苯溶液中并在120℃下保持2小时，然后将该N型单晶硅片浸入甲基氯化镁的四氢呋喃溶液中并在80℃下保持12小时，最后清洗该N型单晶硅片。
3)接着在所述N型单晶硅片的上表面沉积第一本征非晶硅层，接着在所述第一本征非晶硅层上沉积第一P型非晶硅层，其中，所述第一本征非晶硅层的厚度为8纳米，所述第一P型非晶硅层的厚度为2纳米，所述第一P型非晶硅层的掺杂浓度为1020cm-3。
4)接着在第一P型非晶硅层上沉积第二P型非晶硅层，其中，所述第二P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度，且所述第二P型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度。
5)接着在第二P型非晶硅层上沉积第三P型非晶硅层，其中，所述第三P型非晶硅层的掺杂浓度大于所述第二P型非晶硅层的掺杂浓度，且所述第三P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度。
6)接着在第三P型非晶硅层上沉积第四P型非晶硅层，其中，所述第四P型非晶硅层的掺杂浓度大于所述第一P型非晶硅层的掺杂浓度。
在所述步骤(4)-(6)中，所述第二P型非晶硅层的厚度为2纳米，所述第三P型非晶硅层的厚度为1纳米，第四P型非晶硅层的厚度为2.5纳米，所述第二P型非晶硅层的掺杂浓度为1019cm-3，所述N型单晶硅片的掺杂浓度为2×1018cm-3，所述第三P型非晶硅层的掺杂浓度为5×1019cm-3，所述第四P型非晶硅层的掺杂浓度为5×1020cm-3。
7)接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层、第一N型非晶硅层、第二N型非晶硅层、第三N型非晶硅层以及第四N型非晶硅层，其中，所述第二N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，所述第二N型非晶硅层的掺杂浓度以及所述第三N型非晶硅层的掺杂浓度小于所述第一N型非晶硅层的掺杂浓度，所述第三N型非晶硅层的掺杂浓度大于所述第二N型非晶硅层的掺杂浓度，所述第四N型非晶硅层的掺杂浓度大于所述第一N型非晶硅层的掺杂浓度，其中，所述第二本征非晶硅层的厚度为8纳米，所述第一N型非晶硅层的厚度为1纳米，所述第二N型非晶硅层的厚度为3.5纳米，所述第三N型非晶硅层的厚度为2纳米，所述第四N型非晶硅层的厚度为2纳米，所述第一N型非晶硅层的掺杂浓度为3×1020cm-3,所述第二N型非晶硅层的掺杂浓度为1019cm-3，所述第三P型非晶硅层的掺杂浓度为6×1019cm-3，所述第四P型非晶硅层的掺杂浓度为8×1020cm-3。
8)接着在所述第四P型非晶硅层上沉积第一透明导电层，接着在所述第四N型非晶硅层上沉积第二透明导电层，所述第一透明导电层和所述第二透明导电层的厚度为600纳米，所述第一透明导电层和所述第二透明导电层的材质为AZO、ITO、FTO、石墨烯、银纳米线以及碳纳米管中的多种。
9)接着在所述第一透明导电层上沉积正面电极，并在所述第二透明导电层上沉积背面电极，其中，所述正面电极和所述背面电极的厚度为800纳米，所述正面电极和所述背面电极为层叠的钛、钯以及银。
该硅异质结光伏电池的效率为24.2％。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。
Claims (9)
1.一种硅异质结光伏电池的制造方法，其特征在于：包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上表面和下表面均形成类金字塔微结构；
2)接着对所述N型单晶硅片进行甲基化处理，以在所述N型单晶硅片的上下表面形成Si-CH3键；
3)接着在所述N型单晶硅片的上表面沉积第一本征非晶硅层，接着在所述第一本征非晶硅层上沉积第一P型非晶硅层；
4)接着在第一P型非晶硅层上沉积第二P型非晶硅层，其中，所述第二P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度，且所述第二P型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度；
5)接着在第二P型非晶硅层上沉积第三P型非晶硅层，其中，所述第三P型非晶硅层的掺杂浓度大于所述第二P型非晶硅层的掺杂浓度，且所述第三P型非晶硅层的掺杂浓度小于所述第一P型非晶硅层的掺杂浓度；
6)接着在第三P型非晶硅层上沉积第四P型非晶硅层，其中，所述第四P型非晶硅层的掺杂浓度大于所述第一P型非晶硅层的掺杂浓度；
7)接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层、第一N型非晶硅层、第二N型非晶硅层、第三N型非晶硅层以及第四N型非晶硅层，其中，所述第二N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，所述第二N型非晶硅层的掺杂浓度以及所述第三N型非晶硅层的掺杂浓度小于所述第一N型非晶硅层的掺杂浓度，所述第三N型非晶硅层的掺杂浓度大于所述第二N型非晶硅层的掺杂浓度，所述第四N型非晶硅层的掺杂浓度大于所述第一N型非晶硅层的掺杂浓度；
8)接着在所述第四P型非晶硅层上沉积第一透明导电层，接着在所述第四N型非晶硅层上沉积第二透明导电层；
9)接着在所述第一透明导电层上沉积正面电极，并在所述第二透明导电层上沉积背面电极。
2.根据权利要求1所述的硅异质结光伏电池的制造方法，其特征在于：在所述步骤(2)中，首先将所述N型单晶硅片在HF溶液中处理5-10分钟，接着将该N型单晶硅片浸入饱和五氯化磷的氯苯溶液中并在110-120℃下保持2-4小时，然后将该N型单晶硅片浸入甲基氯化镁的四氢呋喃溶液中并在60-80℃下保持9-12小时，最后清洗该N型单晶硅片。
3.根据权利要求1所述的硅异质结光伏电池的制造方法，其特征在于：在所述步骤(3)中，所述第一本征非晶硅层的厚度为5-8纳米，所述第一P型非晶硅层的厚度为1-2纳米，所述第一P型非晶硅层的掺杂浓度为3×1019cm-3-2×1020cm-3。
4.根据权利要求3所述的硅异质结光伏电池的制造方法，其特征在于：在所述步骤(4)-(6)中，所述第二P型非晶硅层的厚度为2-3纳米，所述第三P型非晶硅层的厚度为1-2纳米，第四P型非晶硅层的厚度为1.5-2.5纳米，所述第二P型非晶硅层的掺杂浓度为5×1018cm-3-6×1019cm-3，所述N型单晶硅片的掺杂浓度为1017cm-3-3×1018cm-3，所述第三P型非晶硅层的掺杂浓度为1019cm-3-1020cm-3，所述第四P型非晶硅层的掺杂浓度为8×1019cm-3-6×1020cm-3。
5.根据权利要求4所述的硅异质结光伏电池的制造方法，其特征在于：在所述步骤(7)中，所述第二本征非晶硅层的厚度为5-10纳米，所述第一N型非晶硅层的厚度为1-2纳米，所述第二N型非晶硅层的厚度为2.5-3.5纳米，所述第三N型非晶硅层的厚度为2-3纳米，所述第四N型非晶硅层的厚度为1-2纳米。
6.根据权利要求5所述的硅异质结光伏电池的制造方法，其特征在于：在所述步骤(7)中，所述第一N型非晶硅层的掺杂浓度为5×1019cm-3-6×1020cm-3,所述第二N型非晶硅层的掺杂浓度为8×1018cm-3-9×1019cm-3，所述第三P型非晶硅层的掺杂浓度为2×1019cm-3-2×1020cm-3，所述第四P型非晶硅层的掺杂浓度为1020cm-3-1021cm-3。
7.根据权利要求1所述的硅异质结光伏电池的制造方法，其特征在于：在所述步骤(8)中，所述第一透明导电层和所述第二透明导电层的厚度为200-600纳米，所述第一透明导电层和所述第二透明导电层的材质为AZO、ITO、FTO、石墨烯、银纳米线以及碳纳米管中的一种或多种。
8.根据权利要求1所述的硅异质结光伏电池的制备方法，其特征在于：在所述步骤(9)中，所述正面电极和所述背面电极的厚度为300-800纳米，所述正面电极和所述背面电极的材质为银、铜、金、钛、钯、铝中的一种或多种。
9.一种硅异质结光伏电池，其特征在于，采用权利要求1-8任一项所述的方法制备形成的。
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