CN108172499A - 一种超级背封品再腐蚀的工艺方法 - Google Patents
一种超级背封品再腐蚀的工艺方法 Download PDFInfo
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- CN108172499A CN108172499A CN201711308405.1A CN201711308405A CN108172499A CN 108172499 A CN108172499 A CN 108172499A CN 201711308405 A CN201711308405 A CN 201711308405A CN 108172499 A CN108172499 A CN 108172499A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711308405.1A CN108172499B (zh) | 2017-12-11 | 2017-12-11 | 一种超级背封品再腐蚀的工艺方法 |
Applications Claiming Priority (1)
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CN201711308405.1A CN108172499B (zh) | 2017-12-11 | 2017-12-11 | 一种超级背封品再腐蚀的工艺方法 |
Publications (2)
Publication Number | Publication Date |
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CN108172499A true CN108172499A (zh) | 2018-06-15 |
CN108172499B CN108172499B (zh) | 2021-07-06 |
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CN201711308405.1A Active CN108172499B (zh) | 2017-12-11 | 2017-12-11 | 一种超级背封品再腐蚀的工艺方法 |
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CN (1) | CN108172499B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110718457A (zh) * | 2019-09-26 | 2020-01-21 | 天津中环领先材料技术有限公司 | 一种降低区熔poly背封单抛片边缘晶孔的加工工艺 |
CN113675083A (zh) * | 2021-10-25 | 2021-11-19 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN114653658A (zh) * | 2022-04-11 | 2022-06-24 | 江苏鑫华半导体科技股份有限公司 | 对电子级多晶硅进行清洗的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4905072A (en) * | 1981-11-13 | 1990-02-27 | Canon Kabushiki Kaisha | Semiconductor element |
CN101775662A (zh) * | 2010-01-26 | 2010-07-14 | 宜昌南玻硅材料有限公司 | 一种高纯多晶硅硅块腐蚀清洗的方法 |
CN101974785A (zh) * | 2010-11-03 | 2011-02-16 | 天津市环欧半导体材料技术有限公司 | 一种硅多晶原料的清洗方法 |
CN102634800A (zh) * | 2012-04-21 | 2012-08-15 | 湖南红太阳光电科技有限公司 | 一种晶体硅太阳能电池较难清洗返工片的清洗方法 |
CN103117328A (zh) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
-
2017
- 2017-12-11 CN CN201711308405.1A patent/CN108172499B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4905072A (en) * | 1981-11-13 | 1990-02-27 | Canon Kabushiki Kaisha | Semiconductor element |
CN101775662A (zh) * | 2010-01-26 | 2010-07-14 | 宜昌南玻硅材料有限公司 | 一种高纯多晶硅硅块腐蚀清洗的方法 |
CN101974785A (zh) * | 2010-11-03 | 2011-02-16 | 天津市环欧半导体材料技术有限公司 | 一种硅多晶原料的清洗方法 |
CN102634800A (zh) * | 2012-04-21 | 2012-08-15 | 湖南红太阳光电科技有限公司 | 一种晶体硅太阳能电池较难清洗返工片的清洗方法 |
CN103117328A (zh) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110718457A (zh) * | 2019-09-26 | 2020-01-21 | 天津中环领先材料技术有限公司 | 一种降低区熔poly背封单抛片边缘晶孔的加工工艺 |
CN110718457B (zh) * | 2019-09-26 | 2022-07-08 | 天津中环领先材料技术有限公司 | 一种降低区熔poly背封单抛片边缘晶孔的加工工艺 |
CN113675083A (zh) * | 2021-10-25 | 2021-11-19 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN113675083B (zh) * | 2021-10-25 | 2021-12-21 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN114653658A (zh) * | 2022-04-11 | 2022-06-24 | 江苏鑫华半导体科技股份有限公司 | 对电子级多晶硅进行清洗的方法 |
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CN108172499B (zh) | 2021-07-06 |
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Effective date of registration: 20191226 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |
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