CN108172499B - 一种超级背封品再腐蚀的工艺方法 - Google Patents
一种超级背封品再腐蚀的工艺方法 Download PDFInfo
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- CN108172499B CN108172499B CN201711308405.1A CN201711308405A CN108172499B CN 108172499 B CN108172499 B CN 108172499B CN 201711308405 A CN201711308405 A CN 201711308405A CN 108172499 B CN108172499 B CN 108172499B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 30
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000005260 corrosion Methods 0.000 claims abstract description 23
- 230000007797 corrosion Effects 0.000 claims abstract description 20
- 239000011259 mixed solution Substances 0.000 claims abstract description 14
- 239000000243 solution Substances 0.000 claims abstract description 14
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 239000003814 drug Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract description 12
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 9
- -1 polyoxyethylene diphenyl ether Polymers 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000011109 contamination Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- 239000002957 persistent organic pollutant Substances 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 239000011550 stock solution Substances 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 229910004074 SiF6 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711308405.1A CN108172499B (zh) | 2017-12-11 | 2017-12-11 | 一种超级背封品再腐蚀的工艺方法 |
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CN201711308405.1A CN108172499B (zh) | 2017-12-11 | 2017-12-11 | 一种超级背封品再腐蚀的工艺方法 |
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CN108172499A CN108172499A (zh) | 2018-06-15 |
CN108172499B true CN108172499B (zh) | 2021-07-06 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110718457B (zh) * | 2019-09-26 | 2022-07-08 | 天津中环领先材料技术有限公司 | 一种降低区熔poly背封单抛片边缘晶孔的加工工艺 |
CN113675083B (zh) * | 2021-10-25 | 2021-12-21 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN114653658B (zh) * | 2022-04-11 | 2023-06-20 | 江苏鑫华半导体科技股份有限公司 | 对电子级多晶硅进行清洗的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4905072A (en) * | 1981-11-13 | 1990-02-27 | Canon Kabushiki Kaisha | Semiconductor element |
CN101775662A (zh) * | 2010-01-26 | 2010-07-14 | 宜昌南玻硅材料有限公司 | 一种高纯多晶硅硅块腐蚀清洗的方法 |
CN101974785A (zh) * | 2010-11-03 | 2011-02-16 | 天津市环欧半导体材料技术有限公司 | 一种硅多晶原料的清洗方法 |
CN102634800A (zh) * | 2012-04-21 | 2012-08-15 | 湖南红太阳光电科技有限公司 | 一种晶体硅太阳能电池较难清洗返工片的清洗方法 |
CN103117328A (zh) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
-
2017
- 2017-12-11 CN CN201711308405.1A patent/CN108172499B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4905072A (en) * | 1981-11-13 | 1990-02-27 | Canon Kabushiki Kaisha | Semiconductor element |
CN101775662A (zh) * | 2010-01-26 | 2010-07-14 | 宜昌南玻硅材料有限公司 | 一种高纯多晶硅硅块腐蚀清洗的方法 |
CN101974785A (zh) * | 2010-11-03 | 2011-02-16 | 天津市环欧半导体材料技术有限公司 | 一种硅多晶原料的清洗方法 |
CN102634800A (zh) * | 2012-04-21 | 2012-08-15 | 湖南红太阳光电科技有限公司 | 一种晶体硅太阳能电池较难清洗返工片的清洗方法 |
CN103117328A (zh) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
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Effective date of registration: 20191226 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |
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