CN108140620A - For the epoxy molding compounds of high-power SOIC semiconductor packages application - Google Patents
For the epoxy molding compounds of high-power SOIC semiconductor packages application Download PDFInfo
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- CN108140620A CN108140620A CN201580079851.2A CN201580079851A CN108140620A CN 108140620 A CN108140620 A CN 108140620A CN 201580079851 A CN201580079851 A CN 201580079851A CN 108140620 A CN108140620 A CN 108140620A
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- Prior art keywords
- molding compounds
- epoxy molding
- epoxy
- resin
- weight
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Links
- 229920006336 epoxy molding compound Polymers 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 52
- 239000003822 epoxy resin Substances 0.000 claims abstract description 27
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 27
- 238000005040 ion trap Methods 0.000 claims abstract description 17
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000945 filler Substances 0.000 claims abstract description 15
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 15
- 239000005011 phenolic resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims description 49
- 239000011347 resin Substances 0.000 claims description 49
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 36
- -1 Amine compounds Chemical class 0.000 claims description 33
- 239000003063 flame retardant Substances 0.000 claims description 26
- 239000000049 pigment Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 125000003700 epoxy group Chemical group 0.000 claims description 11
- 239000004593 Epoxy Substances 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 229920002379 silicone rubber Polymers 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 6
- 239000000347 magnesium hydroxide Substances 0.000 claims description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229920002857 polybutadiene Polymers 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 5
- 229910021502 aluminium hydroxide Inorganic materials 0.000 claims description 5
- 239000007822 coupling agent Substances 0.000 claims description 5
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 claims description 5
- 229910001701 hydrotalcite Inorganic materials 0.000 claims description 5
- 229960001545 hydrotalcite Drugs 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 150000002903 organophosphorus compounds Chemical class 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- 239000004721 Polyphenylene oxide Chemical group 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 150000002460 imidazoles Chemical class 0.000 claims description 4
- 229920000570 polyether Chemical group 0.000 claims description 4
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 230000001404 mediated effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 2
- 229920000877 Melamine resin Polymers 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- 239000004917 carbon fiber Substances 0.000 claims description 2
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 2
- JHXCINJSAAFBDH-UHFFFAOYSA-N [Ca].O[Si](O)(O)O Chemical compound [Ca].O[Si](O)(O)O JHXCINJSAAFBDH-UHFFFAOYSA-N 0.000 claims 1
- 238000001125 extrusion Methods 0.000 claims 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000010992 reflux Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 29
- 238000012360 testing method Methods 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 229910000077 silane Inorganic materials 0.000 description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 13
- 238000000465 moulding Methods 0.000 description 10
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 9
- 239000004305 biphenyl Substances 0.000 description 7
- 235000010290 biphenyl Nutrition 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 101001014562 Homo sapiens Male-specific lethal 3 homolog Proteins 0.000 description 5
- 102100032515 Male-specific lethal 3 homolog Human genes 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 101150091203 Acot1 gene Proteins 0.000 description 4
- 102100025854 Acyl-coenzyme A thioesterase 1 Human genes 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- 229940043774 zirconium oxide Drugs 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229940091250 magnesium supplement Drugs 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920013822 aminosilicone Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- UHZZMRAGKVHANO-UHFFFAOYSA-M chlormequat chloride Chemical compound [Cl-].C[N+](C)(C)CCCl UHZZMRAGKVHANO-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- TZSXPFCNIIPDDY-UHFFFAOYSA-N 4-ethyltriazine Chemical class CCC1=CC=NN=N1 TZSXPFCNIIPDDY-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MCEBKLYUUDGVMD-UHFFFAOYSA-N [SiH3]S(=O)=O Chemical compound [SiH3]S(=O)=O MCEBKLYUUDGVMD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229960005363 aluminium oxide Drugs 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 229940049676 bismuth hydroxide Drugs 0.000 description 1
- TZSXPYWRDWEXHG-UHFFFAOYSA-K bismuth;trihydroxide Chemical compound [OH-].[OH-].[OH-].[Bi+3] TZSXPYWRDWEXHG-UHFFFAOYSA-K 0.000 description 1
- 235000012241 calcium silicate Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002955 immunomodulating agent Substances 0.000 description 1
- 229940121354 immunomodulator Drugs 0.000 description 1
- 230000002584 immunomodulator Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229960000869 magnesium oxide Drugs 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
Landscapes
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention relates to a kind of epoxy molding compounds and preparation method and the purposes of epoxy molding compounds.The epoxy molding compounds include epoxy resin, phenolic resin, low stress modified dose, ion trap agent, curing accelerator and filler.Epoxy molding compounds can be used for high-power SOIC semiconductor packages of the electricity leakage less than 30 μ A at 180 DEG C, while can meet JEDEC reliabilities and the unleaded reflux required standard at 260 DEG C by it.
Description
Technical field
The present invention relates to a kind of epoxy molding compounds, are particularly used for high-power SOIC (small shape (Small
Outline) integrated circuit) semiconductor packages application and epoxy molding compounds preparation method and purposes.
Background technology
Because epoxy resin has good balance quality, including molding property, electrical properties, moisture resistance, heat resistance, machine
Bonding of tool property and the component to being inserted etc., molded epoxy naval stores is widely used as the group of Electrical and Electronic equipment
Part, such as transistor and integrated circuit plate.
Molded epoxy naval stores is prepared by epoxy molding compounds.Typical epoxy molding compounds include asphalt mixtures modified by epoxy resin
Fat, curing agent (curing agent), curing accelerator (catalyst) and the filler and additive being optionally present.In a mold in liter
It is kept for the regular hour at high temperature, can epoxy molding compounds be molded and are cured as the product of solid forms.Hereafter,
Demolded article usually cures afterwards at high temperature to complete curing reaction, and obtains the resin with final expected performance.
The current voltage of mainstream logic SOP (small outline packages) and SOIC encapsulation voltages is only some tens of volts (normally about 30
Volt).With the progress of technology, such as in LED illumination industry, more and more chip Chevron Research Company (CRC)s are (electric by high-voltage chip
Pressure>Logic SOIC semiconductor packages 500V) is incorporated to, to realize better service life and reduce energy consumption.If however, in high pressure
Using conventional logic SOP epoxy molding compounds in SOP products, then high temperature (180 DEG C) leakage problem may occur and lead
Cause product failure.
US7291684B2, US20130062790A1 and US2013062748A1 disclose the epoxy for semiconductor packages
Resin combination.But they are not suitable for high-voltage applications.
So far, there are no the systems of the epoxy molding compounds to being suitable for high-power SOIC semiconductor packages application
Journal of Sex Research.
Invention content
The purpose of the present invention is developing a kind of novel epoxy molding compounds (EMC), it is less than for leakage electric at 180 DEG C
30 μ a high-power SOIC semiconductor packages (>500 volts), while it can (combined electronics assembly engineering be assisted by JEDEC
Meeting) reliability, the unleaded reflux required standard at 260 DEG C.
On the one hand, the present invention provides a kind of epoxy molding compounds, it includes
(a) epoxy resin,
(b) phenolic resin,
(c) low stress modified dose,
(d) ion trap agent,
(e) curing accelerator,
(f) filler,
It is characterized in that,
Described low stress modified dose is selected from following one or more：Silicones comprising epoxy group includes amino
Silicones, the silicones comprising epoxy group and polyether group, epoxidised polybutadiene rubber and with nucleocapsid structure
Silicon rubber,
The ion trap agent is selected from following one or more：Hydrotalcite, magnesium, zirconium, aluminium, bismuth, antimony and titanium hydrogen-oxygen
Compound or oxide, and
The curing accelerator is selected from following one or more：Amine compounds, organic phosphorus compound, triphenylphosphine and
Its derivative and imidazole type compound.
On the other hand, the present invention provides the method for preparing the epoxy molding compounds of the present invention, includes the following steps：
(1) it is precisely weighed each component and mixes it in high-speed mixer, preferably 20-30 minutes；
(2) liquid additive is added in into mixing machine and continues to mix, preferably 15-20 minutes,
(3) material of mixing is made to pass through double screw extruder, and extruded material is preferably mediated at 90-110 DEG C,
(4) finally the material is cooled down and ground.
It yet still another aspect, the epoxy molding compounds the present invention provides the present invention should in high-power SOIC semiconductor packages
Purposes in.
The other feature and aspect of theme are illustrated in further detail below.
Specific embodiment
The present invention is more fully described in the following paragraphs.Except non-clearly on the contrary, each aspect so described can be with
Any other aspect or many aspects combination.Particularly, being described as preferred or advantageous any feature can be described as with any
It is preferred that or other advantageous features or the combination of multiple features.
In the linguistic context of the present invention, unless the context indicates, term used should be explained according to defined below.On unless
Hereafter clearly indicate, singulative used herein "one", " one kind ", "the" and " this " include odd number and plural.
The term as used herein "comprising" and " comprising " and " containing " they are synonymous, and are covered or open, and
It is not excluded for member that is additional, not pointing out, element or method and step.
The reference of numerical end point includes all numbers and score covered in respective range and cited endpoint.
Equivalent, concentration or other values or parameter are expressed as range, preferred scope or preferred upper limit value and preferred lower limit value
When, it should be understood that the specific open any model obtained by combining any upper limit or preferred value with any lower limit or preferred value
It encloses, does not consider whether be expressly recited the range of the acquisition within a context.
All bibliography quoted in this specification are incorporated herein by whole quote.
Unless otherwise defined, all terms used in disclosure of the invention including technical and scientific term, have this hair
The bright normally understood meaning of one of ordinary skill in the art.By further example, define to be best understood from this herein comprising term
The introduction of invention.
The present invention relates to low stress and highly reliable epoxy resin compound, preparation method and its high pressure (>
500 voltages) application loaded onto of SOIC semiconductor packages.It can be used for the height of such as SOP8, SOP14, SOP16, SOP20, SOP28
Press the surface encapsulation of equipment.It is less than 30 μ a using the leakage being encapsulated at 180 DEG C of the epoxy resin compound of the present invention, and
Meet other reliability requirements under JEDEC MSL3.
In order to improve the leakage under high temperature performance of epoxy molding compounds and other standard reliability energy, present inventor has performed
Further investigation, with optimize epoxy resin, curing accelerator, low stress modified dose, fire retardant, ion trap agent etc. type and contain
Amount.
Finally, the present inventor obtains epoxy molding compounds, it includes
A) epoxy resin,
B) phenolic resin,
C) low stress modified dose,
D) ion trap agent,
E) curing accelerator,
(f) filler,
It is characterized in that, described low stress modified dose is selected from following one or more：Silicon tree comprising epoxy group
Fat wraps amino-containing silicones, the silicones comprising epoxy group and polyether group, epoxidised polybutadiene rubber and has
The silicon rubber of nucleocapsid structure,
The ion trap agent is selected from following one or more：Hydrotalcite, magnesium, zirconium, aluminium, bismuth, antimony and titanium hydrogen-oxygen
Compound or oxide, and
The curing accelerator is selected from following one or more：Amine compounds, organic phosphorus compound, triphenylphosphine and
Its derivative and imidazole type compound.
(a) epoxy resin
The epoxy resin used in the present invention includes two or more epoxy groups.Epoxy resin is selected from o-cresol type ring
Oxygen resin, dicyclopentadiene-type epoxy resin, more aroma type epoxy resin, biphenyl aralkyl (biphenylene aralkyl)
Type epoxy resin and biphenyl type epoxy resin.These epoxy resin can be used alone or the mixing as two or more
Object uses.
The requirement of low water content and mobility in view of product, epoxy resin are preferably selected from following one or more
Resin：Dicyclopentadiene-type epoxy resin, biphenyl aralkyl-type epoxy resin and biphenyl type epoxy resin.Go out from identical viewpoint
Hair, relative to the total weight of epoxy molding compounds, the content of epoxy resin is preferably 2 weight %-10 weight %.
(b) phenolic resin
The phenolic resin used in the present invention includes two or more hydroxyls.The phenolic resin is selected from following one kind
Or various kinds of resin：Phenol resol resins, cresol novolac resin, biphenyl aralkyl-type resin, more aroma type phenolic aldehyde trees
Fat and tris-phenol type phenolic resin.
The requirement of low water content and mobility in view of product, phenolic resin are preferably one or more selected from following
Resin：Biphenyl aralkyl-type resin and tris-phenol type phenolic resin.From the viewpoint of identical, relative to epoxy mold
The total weight of object is closed, the content of phenolic resin is preferably 2 weight %-10 weight %.
The molar ratio of epoxy group number in hydroxyl value and epoxy resin in phenolic resin is 0.5-1.5.
(c) low stress modified dose
Low stress modified dose used in the present invention can be selected from following one or more：Epoxy group silicones,
The oxidation silicon rubber of amino silicone, epoxy group and polyether group silicones, oxidation polybutadiene rubber or nucleocapsid.
From the viewpoint of moisture resistance and mobility, low stress modified dose be preferably selected from it is following one or more：Ring
The oxidation silicon rubber of oxygen groups silicones, oxidation polybutadiene rubber and nucleocapsid structure.From the point of view of above-mentioned same insight, relatively
In the total weight of epoxy molding compounds, low stress modified dose of content is preferably 0.2 weight %-2 weight %.
(d) ion trap agent
The ion trap agent used in the present invention can be selected from following one or more：Hydrotalcite, magnesium, zirconium, aluminium,
The hydroxide or oxide of bismuth, antimony and titanium.
From the viewpoint of improved semiconducter IC corrosion resistance and high-temperature storage performance, ion trap agent can be selected from
Following is one or more：Hydrotalcite, magnesium, zirconium, aluminium and bismuth hydroxide or oxide.From the viewpoint of identical, relatively
In the total weight of epoxy molding compounds, the content of capturing agent is preferably 0.2 weight %-2 weight %.
(e) curing accelerator
As used herein, term " curing accelerator " has the meaning identical with " catalyst ", catalysis or promotion epoxy
Curing reaction between resin and curing agent.
The curing accelerator used in the present invention can be selected from following one or more：Amine compounds, organic phosphatization
Close object, triphenylphosphine and its derivative and imidazole type compound.
In view of the requirement to mobility and reliability, curing accelerator is preferably selected from following one or more：Three
Phenylphosphine, triphenylphosphine and naphtoquinone compounds, 2,4- diamino -6- [2'- methylimidazoles-(1)] ethyl triazines or dimethyl benzylamine.
From the same viewpoint, relative to the total weight of epoxy molding compounds, the content of curing accelerator is preferably 0.1 weight
Measure %-0.5 weight %.
(f) filler
It, can be at this in order to improve certain performances of molding product, such as wearability, moisture resistance, thermal conductivity or electrical property
Various fillers are used in the epoxy molding compounds of invention.
Filler for the present invention can be selected from following one or more：Crystalline silica, fused silica,
Preparing spherical SiO 2, titanium dioxide, aluminium hydroxide, magnesium hydroxide, zirconium dioxide, calcium carbonate, calcium silicates, carbon fiber and glass fibers
Dimension.Any of above filler listed can be used alone or two or more are applied in combination.
From the low line leakage in IC and low stress requirement, the preferably spherical silica of filler.From identical viewpoint
It sets out, relative to the total weight of epoxy molding compounds, the content of filler is preferably 80 weight %-90 weight %.
In order to improve the performance of epoxy molding compounds, one kind can be used in the epoxy molding immunomodulator compounds of the present invention
Or multiple additives.The example of additive includes filler, fire retardant, releasing agent, coupling agent, pigment etc..
Fire retardant
Fire retardant for the present invention can be selected from following one or more：Brominated epoxy fire retardant, has antimony oxide
Machine phosphorus compound, Melamine based flame-retardants, aluminium hydroxide, magnesium hydroxide, zinc borate, titanium oxide.
In view of the requirement of environmental protection, fire retardant is preferably selected from following one or more：Organic phosphorus compound, three
Poly cyanamid, aluminium hydroxide, magnesium hydroxide, zinc borate, titanium oxide.
In view of the requirement to reliability and mobility, fire retardant can be selected from following one or more：Organophosphor
Compound, magnesium hydroxide, zinc borate.From the viewpoint of identical, relative to the total weight of epoxy molding compounds, fire retardant
Content is 0.2 weight %-2 weight %.
Releasing agent
Releasing agent for the present invention is selected from following one or more：Natural or synthetic wax.
Coupling agent
The coupling agent used in the present invention is selected from following one or more：Epoxy silane, amino silane, metering system
Acyloxy silane and hydrosulphonyl silane.
Pigment
Various pigment can be used in the present invention.For example, pigment is carbon black.
In a preferred embodiment of the invention, epoxy molding compounds include：
(a) epoxy resin of 2-10 weight %,
(b) phenolic resin of 2-10 weight %,
(c) low stress modified dose of 0.2-2 weight %,
(d) ion trap agent of 0.2-2 weight %,
(e) curing accelerator of 0.1-0.5 weight %,
(f) filler of 80-90 weight %,
Wherein weight percent is the total weight based on epoxy molding compounds.
Other components of epoxy molding compounds can be as follows：
(g) fire retardant of 0-15 weight %,
(h) coupling agent of 0.1-3 weight %,
(i) releasing agent of 0.2-3 weight %,
(j) pigment of 0.1-1 weight %,
Wherein weight percent is the total weight based on epoxy molding compounds.
The preparation method of the epoxy molding compounds of the present invention is not particularly limited.In preferred embodiments, epoxy
Molding compounds are prepared by method comprising the following steps：
(1) it is precisely weighed each component and mixes it in high-speed mixer 20-30 minutes；
(2) liquid additive is added in into mixing machine and continues mixing 15-20 minutes,
(3) material of mixing is made to pass through double screw extruder, and extruded material is mediated at 90-110 DEG C,
(4) finally material is cooled down and ground.
The epoxy molding compounds of the present invention can be used for encapsulation IC equipment.
It can pass through traditional molding methods, such as transfer moudling, compression mould for the epoxy molding compounds of IC equipment
The curings such as modeling.
The disclosure may be better understood with reference to following embodiment.
Embodiment
The present invention will be illustrated in detail by way of the following examples.However, it will be understood by those skilled in the art that this portion
Divide the exemplary implementation of only specification, it is not intended to limit the wider range of aspect of the present invention.
Illustrate the parameter and target zone that measure in table 1.
Table 1
| Parameter | Target zone | |
| 1 | Gel time, s | 25-45 |
| 2 | Spiral flow (inch) | 35-55 |
| 3 | Hydroscopicity (%) | 0.2-0.35 |
| 4 | Tg(℃) | 100-120 |
| 5 | CTE1(ppm) | 6-10 |
| 6 | CTE2(ppm) | 25-40 |
| 7 | Storage modulus, RM | 20000-30000 |
| 8 | Storage modulus, 175 DEG C | 500-1200 |
| 9 | Storage modulus, 260 DEG C | 600-900 |
| 10 | Bonding force (N) (after MSL3) in Ag leadframes (LF) | 200-400 |
| 11 | Layering capabilities after MSL3 on QFP44 | 0 |
| 12 | Layering capabilities after MSL2A on QFP44 | 0 |
| 13 | High Temperature ionic Conductivity (180 DEG C) | <4.000×10-8 |
Test method
The test method of above-mentioned parameter is as described below.
1. gel time (GT)
Epoxy molding compounds are placed in control on the hot plate of 175 ± 2 DEG C of assigned temperature.In a manner of moving back and forth
(with spatula (spatula)) impact compound is until be hardened.Stopwatch is used in testing.Compound placement is stood afterwards on hot plate
Start timer, and stop when gel is completed.
2.SF (spiral flow)
The spiral flow of epoxy molding compounds is to melting, melt viscosity and the gel time under pressure under specified conditions
The measurement of assemblage characteristic.Under the specified requirements of the application temperature and pressure of the quality of loads (charge mass) of control, passing
It send in moulding press (transfer molding press) and carries out the test using the spiral flow mold of standard.According to EMI-1-66
Method carry out spiral current test.Test condition setting is as follows：
Transmit pressure：6.9MPa(1000psi)
Mold temperature：175 ± 2 DEG C or 150 ± 2 DEG C
Hardening time：90s.
3. hydroscopicity (%)
Hydroscopicity test method is carried out according to the method for " PCT24 "；Wherein sample size is set as Φ 50*3mm；And it surveys
Strip part is 121 DEG C/100RH%/2atm/24 hours；Hydroscopicity may be calculated：
The weight * 100% of weight increase/print of print after PCT24 hours.
4.Tg
In glass transition temperature test, the Tg of layered product is tested.In testing, the sample from extruder is led to
It crosses mould machine 150s under 180 DEG C of molding temperature and sheet material is made.After molding, which is put into 180 DEG C of baking oven 6 hours.
The size of sheet material is 5cm*1cm*0.4cm.The Tg of sheet material is measured using DMA (dynamic thermomechanical analysis), wherein sample is placed in
In DMA machines, heated under the frequency of 5Hz with the rate of 3 DEG C/min until 300 DEG C.The value of Tg is the peak of tan δ figures.
5.CTE1
6.CTE2
α 1 (CTE1) and α 2 (CTE2) are tested by TMA.
As temperature is increased with controllable rate, thermomechanical analyzer measures the linear change in sample size, and records
Change in size-temperature curve.α 1 is calculated within the temperature range of less than Tg, and α 2 is calculated within the temperature range of higher than Tg.
Average coefficient of expansion α is usually more than the linear segment of curve.
CTE1＆2 values are measured, and test condition is as follows using the thermomechanical analyzer Q-400 of TA Instruments：With 10
DEG C/print is heated to 280 DEG C, and load is 0.1N by the speed of min from room temperature.
7. storage modulus (RM)
8. storage modulus (175 DEG C)
9. storage modulus (260 DEG C)
Storage modulus is measured by dynamic mechanical analysis (DMA), is measured using temperature as the viscoelastic property of the material of function
Variation.Sample is vibrated with the defined rate of heat addition with fixed amplitude.DMA curves provide plasticizer effect, molecular motion, stress pine
The information such as relaxation, hardness or rigidity.
In testing, by the sample from extruder by mould machine the 150s under 180 DEG C of molding temperature, after molding,
The sheet material is put into the baking oven that temperature is 180 DEG C 6 hours.The size of sheet material is 5cm*1cm*0.4cm.Sample is placed in DMA
In machine, sample is heated to 300 DEG C under the frequency of 5Hz with the rate of heat addition of 3 DEG C/min.
10. the bonding force in silver medal Ag leadframes (LF)
Test method is designed by Henkel, to measure the adhesive strength between epoxy molding compounds and leadframe surface,
Wherein leadframe has the item that different coating includes plating Cu, Ni, Ag and Ni/Pd/Au.First, in specific temperature (175 ± 2
DEG C) under with pulling-on piece (tap pull) LF moulding materials, reliability test (such as PMC, MSL are tested) is then carried out to encapsulation, finally
Tensile test is carried out, to measure the EMC bonding forces of different plating type LF.
Layering capabilities after 11.MSL3 on QFP44
Layering capabilities after 12.MSL2A on QFP44
First, material is molded under certain temperature (175 ± 2 DEG C) with QFP44LF.Then, QFP44 encapsulation is layered
Test carries out MSL3 and MSL2A according to JEDEC JESD22-A113D standards and tests.
13. High Temperature ionic Conductivity (180 DEG C)
In common test, sample is positioned to contact with two electrodes (dielectric sensors), and sinusoidal voltage (is swashed
Encourage voltage (the excitation)) it is applied on an electrode.Sinusoidal current (response) obtained by being measured at second electrode.
Testing piece：Solid polymer plate/film
Measure temperature：Room temperature (if equipped with liquid nitrogen, temperature can further drop to -190 DEG C) measurement frequency to 350 DEG C：
12Hz~100KHz
Raw material：
The raw material and its source used in embodiment is as shown in table 2.
Table 2
The raw material used the epoxy molding compounds of each embodiment is weighed.All raw materials are added in into high-speed mixer
In, and mixed 15 minutes with 300r/min at room temperature, to obtain pre-mix powder.Then by pre-mix powder be put into extruder into
In hopper, squeezed out under about 100 DEG C, the blade rotating speed of 120rpm.The material disintegrating that gained is squeezed out is into powder.
Reference Example：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 1：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine derivates, 0.2%
Embodiment 2：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
2- phenyl -4-methylimidazole curing accelerator, 0.2%
Embodiment 3：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,86.7%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 1%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 4：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,86.7%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%, cationic ion capturing agent 0.5%
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 5：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,86.7%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Zirconium oxide and bismuth oxide type capturing agent, 1%
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 6：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%,
Metal hydroxide combustion inhibitor, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 7：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%,
Metal oxide fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 8：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of organosilicon glycidyl resin type, 0.5%
Anionic ion capturing agent, 0.5%,
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 9：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Epoxidised low stress modified dose of polybutadiene, 0.5%
Anionic ion capturing agent, 0.5%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 10：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Low stress modified dose of silicon rubber, 0.5%
Anionic ion capturing agent, 0.5%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 11：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Reactive liquid polymer rubber CTBN, 0.5%
Anionic ion capturing agent, 0.5%,
Organophosphorous fire retardant, 1%
Carbon pigment, 0.3%
Triphenylphosphine curing accelerator (TPP), 0.2%
Embodiment 12：
Multi-aromatic ring oxygen resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Low stress modified dose of silicon rubber, 0.5%
Zirconium oxide and bismuth oxide type capturing agent, 1%
Carbon pigment, 0.3%
Triphenylphosphine derivates, 0.2%
Embodiment 13：
Multi-aromatic ring oxygen resin (MAR), 3.4%
Biphenyl type epoxy resin (BP), 1.8%
Phenol biphenyl aralkyl resin, 3.8%
Preparing spherical SiO 2,87.2%
γ-glycidoxypropyl trimethoxy and mercaptopropyi trimethoxy fundamental mode silane, 0.7%
Releasing agent, 0.6%
Low stress modified dose of silicon rubber, 0.5%
Zirconium oxide and bismuth oxide type capturing agent, 1%
Carbon pigment, 0.3%
Triphenylphosphine derivates, 0.2%.
The composition of the epoxy molding compounds of embodiment is summarised in table 3.
Table 3
The test result of embodiment parameter is summarized in table 4.
Compared with Reference Example, Examples 1 and 2 change catalyst type to improve leakage under high temperature and layering capabilities.From upper
It states test result and can be seen that the High Temperature ionic Conductivity performance of embodiment 1 and embodiment 2 better than Reference Example.Point of embodiment 1
Layer performance is better than Reference Example, but embodiment 2 is poorer than Reference Example.
Compared with Reference Example, embodiment 3,4 and 5 changes ion trap system and content to improve leakage under high temperature and layering
Performance.The High Temperature ionic Conductivity performance that can be seen that embodiment 4 and embodiment 5 from above-mentioned test result is better than Reference Example.It is real
The layering capabilities for applying example 3,4,5 are similar to Reference Example.
Compared with Reference Example, embodiment 6,7 and 8 changes fire retardant systems and content, to improve leakage under high temperature and layering
Performance.From test result as can be seen that the layering capabilities of embodiment 8 are better than Reference Example, and embodiment 6 and 7 is similar to Reference Example.
It is better than Reference Example that embodiment 7 and 8 is can be seen that from High Temperature ionic Conductivity test result, and embodiment 8 is substantially better than reference
Example.
Compared with Reference Example, embodiment 9,10 and 11 changes low stress modified dose of system and content, is let out with improving high temperature
Leakage and layering capabilities.From test result as can be seen that the layering of embodiment 9,10,11 is better than Reference Example.From High temperature ion conductance
Rate test result can be seen that embodiment 9,10 and 11 better than Reference Example, and embodiment 10 is substantially better than Reference Example.
Compared with Reference Example, embodiment 12 changes catalyst type, ion trap system, fire retardant systems and optimization content
To improve leakage under high temperature and layering capabilities.From test result as can be seen that the layering capabilities of embodiment 12 are similar to Reference Example, but
High Temperature ionic Conductivity result is substantially better than Reference Example.
Compared with Reference Example, embodiment 13 changes resin type, catalyst type, ion trap system, fire retardant body
System, low stress modified dose of type and optimization content are to improve leakage under high temperature and layering capabilities.From test result as can be seen that
The layering capabilities of embodiment 13 after MSL2A are substantially better than Reference Example.Meanwhile High Temperature ionic Conductivity is also significantly better than reference
Example.
Without departing from the spirit and scope of the present invention, those of ordinary skill in the art can implement the present invention's
These and other modifications and variations.In addition, it should be understood that the various aspects of various embodiments can be mutual with interchange and part
It changes.In addition, it will be appreciated by the skilled addressee that foregoing description is only exemplary, it is not intended to be limited in appended power
The present invention further described in profit requirement.
Claims (13)
1. a kind of epoxy molding compounds, it includes：
(a) epoxy resin,
(b) phenolic resin,
(c) low stress modified dose,
(d) ion trap agent,
(e) curing accelerator,
(f) filler,
It is characterized in that,
Described low stress modified dose is selected from following one or more：Silicones comprising epoxy group, the amino-containing silicon of packet
Resin, the silicones comprising epoxy group and polyether group, epoxidised polybutadiene rubber and the silicon rubber with nucleocapsid structure
Glue,
The ion trap agent is selected from following one or more：Hydrotalcite, magnesium, zirconium, aluminium, bismuth, antimony and titanium hydroxide
Or oxide, and
The curing accelerator is selected from following one or more：Amine compounds, organic phosphorus compound, triphenylphosphine and its spread out
Biology and imidazole type compound.
2. the epoxy molding compounds of claim 1, wherein described low stress modified dose includes the silicon rubber with nucleocapsid structure
Glue.
3. the epoxy molding compounds of claim 1, wherein the ion trap agent includes zirconium oxide and bismuth oxide.
4. the epoxy molding compounds of claim 1, wherein the curing accelerator includes triphenylphosphine-Isosorbide-5-Nitrae-benzoquinones adduction
Object.
5. the epoxy molding compounds of claim 1, wherein hydroxyl value in the phenolic resin in the epoxy resin
The molar ratio of epoxy group number is 0.5-1.5.
6. the epoxy molding compounds of claim 1, wherein the filler is selected from following one or more：Crystalline silica
Silicon, fused silica, preparing spherical SiO 2, titanium dioxide, aluminium hydroxide, magnesium hydroxide, zirconium dioxide, calcium carbonate, silicic acid
Calcium, carbon fiber and glass fibre.
7. the epoxy molding compounds of claim 1, wherein the epoxy molding compounds are also comprising fire retardant, the fire retardant
It is selected from following one or more：Brominated epoxy fire retardant, antimony oxide, organic phosphorus compound, melamine, aluminium hydroxide,
Magnesium hydroxide, zinc borate and titanium oxide.
8. the epoxy molding compounds of claim 1, wherein the epoxy molding compounds also include coupling agent.
9. the epoxy molding compounds of claim 1, wherein the epoxy molding compounds also include releasing agent.
10. the epoxy molding compounds of claim 1, wherein the epoxy molding compounds also include pigment.
11. the epoxy molding compounds of any one of claim 1-10, wherein the compound includes：
(a) epoxy resin of 2-10 weight %,
(b) phenolic resin of 2-10 weight %,
(c) low stress modified dose of 0.2-2 weight %,
(d) ion trap agent of 0.2-2 weight %,
(e) curing accelerator of 0.1-0.5 weight %,
(f) filler of 80-90 weight %.
Wherein weight percent is the total weight based on the epoxy molding compounds.
12. a kind of method for the epoxy molding compounds for preparing any one of claim 1-10, includes the following steps：
(1) it is precisely weighed each component and mixes it in high-speed mixer,
(2) liquid additive is added in into the mixing machine and continues to mix,
(3) material of mixing is made to pass through double screw extruder, and the material of extrusion is mediated,
(4) finally the material is cooled down and ground.
13. use of the epoxy molding compounds of any one of claim 1-10 in the application of high-power SOIC semiconductor packages
On the way.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109486100A (en) * | 2018-11-27 | 2019-03-19 | 江苏中鹏新材料股份有限公司 | Epoxy resin for electronic packaging composition and preparation method thereof |
| CN112980137A (en) * | 2019-12-17 | 2021-06-18 | 衡所华威电子有限公司 | Epoxy molding compound and preparation method and application thereof |
| CN114644810A (en) * | 2020-12-18 | 2022-06-21 | 衡所华威电子有限公司 | High-temperature fast-curing low-stress epoxy resin composition and preparation method thereof |
| CN114940805A (en) * | 2022-05-09 | 2022-08-26 | 衡所华威电子有限公司 | Low-stress low-water-absorption epoxy plastic packaging material for semiconductor packaging and preparation method thereof |
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| CN113817291B (en) * | 2021-09-30 | 2022-07-08 | 广东博汇新材料科技有限公司 | Carbon fiber vacuum infusion epoxy resin |
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2015
- 2015-03-19 CN CN201580079851.2A patent/CN108140620B/en not_active Ceased
- 2015-03-19 WO PCT/CN2015/074567 patent/WO2016145648A1/en active Application Filing
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|---|---|---|---|---|
| JP2006233016A (en) * | 2005-02-24 | 2006-09-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN103450632A (en) * | 2012-05-28 | 2013-12-18 | 汉高华威电子有限公司 | Epoxy resin composition for electronic packaging and preparation method thereof |
| CN104277417A (en) * | 2013-07-01 | 2015-01-14 | 北京首科化微电子有限公司 | Epoxy resin composition containing composite flame retardant |
| CN104341774A (en) * | 2013-07-29 | 2015-02-11 | 三星电机株式会社 | Molding composition for semiconductor package and semiconductor package using same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109486100A (en) * | 2018-11-27 | 2019-03-19 | 江苏中鹏新材料股份有限公司 | Epoxy resin for electronic packaging composition and preparation method thereof |
| CN112980137A (en) * | 2019-12-17 | 2021-06-18 | 衡所华威电子有限公司 | Epoxy molding compound and preparation method and application thereof |
| CN112980137B (en) * | 2019-12-17 | 2024-02-02 | 衡所华威电子有限公司 | Epoxy molding compound and preparation method and application thereof |
| CN114644810A (en) * | 2020-12-18 | 2022-06-21 | 衡所华威电子有限公司 | High-temperature fast-curing low-stress epoxy resin composition and preparation method thereof |
| CN114644810B (en) * | 2020-12-18 | 2024-03-01 | 衡所华威电子有限公司 | High-temperature fast-curing low-stress epoxy resin composition and preparation method thereof |
| CN114940805A (en) * | 2022-05-09 | 2022-08-26 | 衡所华威电子有限公司 | Low-stress low-water-absorption epoxy plastic packaging material for semiconductor packaging and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108140620B (en) | 2021-10-29 |
| WO2016145648A1 (en) | 2016-09-22 |
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