CN108140620B - Epoxy molding compounds for high power SOIC semiconductor packaging applications - Google Patents
Epoxy molding compounds for high power SOIC semiconductor packaging applications Download PDFInfo
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- CN108140620B CN108140620B CN201580079851.2A CN201580079851A CN108140620B CN 108140620 B CN108140620 B CN 108140620B CN 201580079851 A CN201580079851 A CN 201580079851A CN 108140620 B CN108140620 B CN 108140620B
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- 229920006336 epoxy molding compound Polymers 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 title claims description 8
- 239000003822 epoxy resin Substances 0.000 claims abstract description 44
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 44
- 239000003607 modifier Substances 0.000 claims abstract description 33
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 19
- 239000005011 phenolic resin Substances 0.000 claims abstract description 19
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000945 filler Substances 0.000 claims abstract description 14
- 238000005040 ion trap Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 35
- 239000003063 flame retardant Substances 0.000 claims description 28
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims description 26
- 239000000049 pigment Substances 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 229920002050 silicone resin Polymers 0.000 claims description 12
- 125000003700 epoxy group Chemical group 0.000 claims description 9
- 229920002379 silicone rubber Polymers 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 150000002903 organophosphorus compounds Chemical class 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 6
- -1 amine compound Chemical class 0.000 claims description 6
- 239000011258 core-shell material Substances 0.000 claims description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 6
- 239000000347 magnesium hydroxide Substances 0.000 claims description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 6
- 229920002857 polybutadiene Polymers 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 239000007822 coupling agent Substances 0.000 claims description 5
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 claims description 5
- 229960001545 hydrotalcite Drugs 0.000 claims description 5
- 229910001701 hydrotalcite Inorganic materials 0.000 claims description 5
- 150000004679 hydroxides Chemical class 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 claims description 4
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 238000004898 kneading Methods 0.000 claims description 3
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 3
- 239000006082 mold release agent Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- 239000000378 calcium silicate Substances 0.000 claims description 2
- 229910052918 calcium silicate Inorganic materials 0.000 claims description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004917 carbon fiber Substances 0.000 claims description 2
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- RGBIPJJZHWFFGE-UHFFFAOYSA-N cyclohexa-2,5-diene-1,4-dione;triphenylphosphane Chemical compound O=C1C=CC(=O)C=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RGBIPJJZHWFFGE-UHFFFAOYSA-N 0.000 claims 1
- 150000002460 imidazoles Chemical class 0.000 claims 1
- 239000002516 radical scavenger Substances 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 229920005989 resin Polymers 0.000 description 31
- 239000011347 resin Substances 0.000 description 31
- 238000012360 testing method Methods 0.000 description 22
- 230000032798 delamination Effects 0.000 description 16
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical class CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 150000001450 anions Chemical class 0.000 description 10
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000004305 biphenyl Substances 0.000 description 7
- 235000010290 biphenyl Nutrition 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 101150091203 Acot1 gene Proteins 0.000 description 4
- 102100025854 Acyl-coenzyme A thioesterase 1 Human genes 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- 101001014562 Homo sapiens Male-specific lethal 3 homolog Proteins 0.000 description 3
- 102100032515 Male-specific lethal 3 homolog Human genes 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101150107890 msl-3 gene Proteins 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- HOZMLTCHTRHKRK-UHFFFAOYSA-N 2-methyl-1-silylprop-2-en-1-one Chemical class CC(=C)C([SiH3])=O HOZMLTCHTRHKRK-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- TZSXPFCNIIPDDY-UHFFFAOYSA-N 4-ethyltriazine Chemical compound CCC1=CC=NN=N1 TZSXPFCNIIPDDY-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229920013822 aminosilicone Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 230000004584 weight gain Effects 0.000 description 1
- 235000019786 weight gain Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
Landscapes
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention relates to an epoxy molding compound and a preparation method thereof and application of the epoxy molding compound. The epoxy molding compound includes an epoxy resin, a phenolic resin, a low stress modifier, an ion trap, a cure accelerator, and a filler. The epoxy molding compound can be used for high-power SOIC semiconductor packages with electric leakage less than 30 muA at 180 ℃, and can meet the standards of JEDEC reliability and lead-free reflow requirement at 260 ℃.
Description
Technical Field
The present invention relates to an epoxy molding compound, particularly for high power SOIC (Small Outline) integrated circuit) semiconductor packaging applications, and a method of making and using the epoxy molding compound.
Background
Molded epoxy resin products are widely used as components of electrical and electronic devices, such as transistors and integrated circuit boards, because epoxy resins have well-balanced properties including molding properties, electrical properties, moisture resistance, heat resistance, mechanical properties, adhesion to components inserted therein, and the like.
Molded epoxy resin products are prepared from epoxy molding compounds. A typical epoxy molding compound comprises an epoxy resin, a curing agent (hardener), a curing accelerator (catalyst), and optionally fillers and additives. The epoxy molding compound may be molded and cured into a solid form article by holding in a mold at an elevated temperature for a period of time. Thereafter, the release article is typically post-cured at elevated temperatures to complete the curing reaction and obtain a resin article having the final desired properties.
Mainstream logic SOP (small outline package) and SOIC package voltages are currently only tens of volts (typically about 30 volts). With advances in technology, for example in the LED lighting industry, more and more chip design companies incorporate high voltage chips (voltage >500V) into logic SOIC semiconductor packages to achieve better lifetime and reduce power consumption. However, if conventional logic SOP epoxy molding compounds are used in high pressure SOP products, high temperature (180 ℃) leakage problems may occur and result in product failure.
US7291684B2, US20130062790a1 and US2013062748a1 disclose epoxy resin compositions for semiconductor encapsulation. However, they are not suitable for high voltage applications.
To date, there has been no systematic study of epoxy molding compounds suitable for high power SOIC semiconductor packaging applications.
Disclosure of Invention
The object of the present invention is to develop a new Epoxy Molding Compound (EMC) for high power SOIC semiconductor packages (>500 volts) with an electrical leakage of less than 30 μ a at 180 ℃ and which at the same time can pass the JEDEC (joint electronics engineering council) reliability, standard for lead-free reflow requirements at 260 ℃.
In one aspect, the present invention provides an epoxy molding compound comprising
(a) An epoxy resin, and a curing agent,
(b) a phenolic resin, a phenolic resin and a phenolic resin,
(c) a low-stress modifier, which is a mixture of a low-stress modifier and a low-stress modifier,
(d) an ion-trapping agent, which is a metal ion-trapping agent,
(e) a curing accelerator for curing the cured resin composition,
(f) the filler is filled in the inner cavity of the shell,
it is characterized in that the preparation method is characterized in that,
the low stress modifier is one or more selected from the group consisting of: epoxy group-containing silicone resins, amino group-containing silicone resins, epoxy group-and polyether group-containing silicone resins, epoxidized polybutadiene rubbers, and silicone rubbers having a core-shell structure,
the ion trap is one or more selected from the group consisting of: hydrotalcite, hydroxides or oxides of magnesium, zirconium, aluminum, bismuth, antimony and titanium, and
the cure accelerator is one or more selected from the group consisting of: amine compounds, organophosphorus compounds, triphenylphosphine and derivatives thereof, and imidazole-type compounds.
In another aspect, the present invention provides a process for preparing the epoxy molding compound of the present invention, comprising the steps of:
(1) accurately weighing each component and mixing it in a high speed mixer, preferably for 20-30 minutes;
(2) the liquid additive is added to the mixer and mixing is continued, preferably for 15-20 minutes,
(3) passing the mixed materials through a twin-screw extruder, and kneading the extruded materials preferably at 90 to 110 ℃,
(4) finally the material is cooled and ground.
In yet another aspect, the present invention provides the use of the epoxy molding compound of the present invention in high power SOIC semiconductor packaging applications.
Other features and aspects of the subject matter are set forth in more detail below.
Detailed Description
The invention is described in more detail in the following paragraphs. Each aspect so described may be combined with any other aspect or aspects unless clearly indicated to the contrary. In particular, any feature described as preferred or advantageous may be combined with any other feature or features described as preferred or advantageous.
In the context of the present invention, the terms used should be construed according to the following definitions, unless the context dictates otherwise. As used herein, the singular forms "a", "an", "the" and "the" include both singular and plural referents unless the context clearly dictates otherwise.
As used herein, the terms "comprising" and "comprises" are synonymous with "comprising," and are inclusive or open-ended and do not exclude additional, unrecited members, elements, or method steps.
The recitation of numerical endpoints includes all numbers and fractions subsumed within the respective range and the recited endpoint.
When an amount, concentration, or other value or parameter is expressed as a range, preferred range, or as a combination of a preferred upper value and a preferred lower value, it is to be understood that any range obtained by combining any upper limit or preferred value with any lower limit or preferred value is specifically disclosed regardless of whether the obtained range is explicitly described in context.
All references cited in this specification are incorporated herein by reference in their entirety.
Unless otherwise defined, all terms used in the disclosure of the present invention, including technical and scientific terms, have the meaning commonly understood by one of ordinary skill in the art to which the present invention belongs. By way of further example, definitions of terms are included herein to better understand the teachings of the present invention.
The present invention relates to low stress and highly reliable epoxy compounds, a process for their preparation and their use in high voltage (>500 volt) SOIC semiconductor packages. It can be used for surface packaging of high voltage devices such as SOP8, SOP14, SOP16, SOP20 and SOP 28. Packages using the epoxy resin compounds of the present invention have a leakage of less than 30 μ a at 180 ℃ and meet other reliability requirements under JEDEC MSL 3.
The present inventors have conducted intensive studies to optimize the types and contents of epoxy resin, curing accelerator, low stress modifier, flame retardant, ion trap, etc. in order to improve the high temperature leak property and other standard reliability properties of epoxy molding compounds.
Finally, the inventors have obtained an epoxy molding compound comprising
a) An epoxy resin, and a curing agent,
b) a phenolic resin, a phenolic resin and a phenolic resin,
c) a low-stress modifier, which is a mixture of a low-stress modifier and a low-stress modifier,
d) an ion-trapping agent, which is a metal ion-trapping agent,
e) a curing accelerator for curing the cured resin composition,
(f) the filler is filled in the inner cavity of the shell,
characterized in that the low stress modifier is one or more selected from the group consisting of: epoxy group-containing silicone resins, amino group-containing silicone resins, epoxy group-and polyether group-containing silicone resins, epoxidized polybutadiene rubbers, and silicone rubbers having a core-shell structure,
the ion trap is one or more selected from the group consisting of: hydrotalcite, hydroxides or oxides of magnesium, zirconium, aluminum, bismuth, antimony and titanium, and
the cure accelerator is one or more selected from the group consisting of: amine compounds, organophosphorus compounds, triphenylphosphine and derivatives thereof, and imidazole-type compounds.
(a) Epoxy resin
The epoxy resin used in the present invention contains two or more epoxy groups. The epoxy resin is selected from o-cresol type epoxy resin, dicyclopentadiene type epoxy resin, polyaromatic type epoxy resin, biphenyl aralkyl type epoxy resin and biphenyl type epoxy resin. These epoxy resins may be used alone or as a mixture of two or more.
In view of the low water content and flowability requirements of the product, the epoxy resin is preferably one or more resins selected from the group consisting of: dicyclopentadiene type epoxy resin, biphenyl aralkyl type epoxy resin, and biphenyl type epoxy resin. From the same viewpoint, the content of the epoxy resin is preferably 2% by weight to 10% by weight with respect to the total weight of the epoxy molding compound.
(b) Phenolic resin
The phenolic resin used in the present invention contains two or more hydroxyl groups. The phenolic resin is one or more resins selected from the group consisting of: phenol novolac resins, cresol novolac resins, biphenyl aralkyl type resins, polyaromatic type phenolic resins, and trisphenolmethane type phenolic resins.
In view of the low water content and flowability requirements of the product, the phenolic resin is preferably one or more resins selected from the group consisting of: biphenyl aralkyl type resins and trisphenol methane type phenolic resins. From the same viewpoint, the content of the phenolic resin is preferably 2% by weight to 10% by weight relative to the total weight of the epoxy molding compound.
The molar ratio of the number of hydroxyl groups in the phenolic resin to the number of epoxy groups in the epoxy resin is from 0.5 to 1.5.
(c) Low stress modifier
The low stress modifier used in the present invention may be one or more selected from the group consisting of: epoxy group silicone resin, amino silicone resin, epoxy group and polyether group silicone resin, oxidized polybutadiene rubber or oxidized silicon rubber with a core-shell structure.
From the viewpoint of moisture resistance and fluidity, the low-stress modifier is preferably one or more selected from the group consisting of: epoxy group silicone resin, oxidized polybutadiene rubber and core-shell structure oxidized silicone rubber. From the same viewpoint as above, the content of the low-stress modifier is preferably 0.2% by weight to 2% by weight relative to the total weight of the epoxy molding compound.
(d) Ion trapping agent
The ion trap used in the present invention may be one or more selected from the group consisting of: hydrotalcite, hydroxides or oxides of magnesium, zirconium, aluminum, bismuth, antimony and titanium.
From the viewpoint of improved corrosion resistance and high-temperature storage performance of semiconductor ICs, the ion trap may be one or more selected from the group consisting of: hydrotalcite, hydroxides or oxides of magnesium, zirconium, aluminum and bismuth. From the same viewpoint, the content of the trapping agent is preferably 0.2 wt% to 2 wt% with respect to the total weight of the epoxy molding compound.
(e) Curing accelerator
As used herein, the term "cure accelerator" has the same meaning as "catalyst" which catalyzes or accelerates the curing reaction between the epoxy resin and the hardener.
The curing accelerator used in the present invention may be one or more selected from the group consisting of: amine compounds, organophosphorus compounds, triphenylphosphine and derivatives thereof, and imidazole-type compounds.
In view of the requirements on flowability and reliability, the curing accelerator is preferably one or more selected from the group consisting of: triphenylphosphine, triphenylphosphine and quinone compounds, 2, 4-diamino-6- [2' -methylimidazole- (1) ] ethyltriazine or dimethylbenzylamine. From the same viewpoint, the content of the curing accelerator is preferably 0.1% by weight to 0.5% by weight relative to the total weight of the epoxy molding compound.
(f) Filler material
Various fillers may be used in the epoxy molding compounds of the present invention in order to improve certain properties of the molded product, such as abrasion resistance, moisture resistance, thermal conductivity, or electrical properties.
The filler used in the present invention may be one or more selected from the group consisting of: crystalline silica, fused silica, spherical silica, titanium dioxide, aluminum hydroxide, magnesium hydroxide, zirconium dioxide, calcium carbonate, calcium silicate, carbon fiber, and glass fiber. Any of the above listed fillers may be used alone or in combination of two or more.
The filler is preferably spherical silica, in view of low line leakage and low stress requirements in the IC. From the same point of view, the content of the filler is preferably 80% by weight to 90% by weight relative to the total weight of the epoxy molding compound.
To improve the properties of the epoxy molding compounds, one or more additives may be used in the epoxy molding compound of the present invention. Examples of the additives include fillers, flame retardants, mold release agents, coupling agents, pigments, and the like.
Flame retardant
The flame retardant used in the present invention may be one or more selected from the group consisting of: brominated epoxy flame retardant, antimony oxide, organic phosphorus compound, melamine type flame retardant, aluminum hydroxide, magnesium hydroxide, zinc borate and titanium oxide.
In view of the requirement of environmental protection, the flame retardant is preferably one or more selected from the group consisting of: organic phosphorus compounds, melamine, aluminum hydroxide, magnesium hydroxide, zinc borate and titanium oxide.
In view of the requirements for reliability and flowability, the flame retardant may be one or more selected from the group consisting of: organic phosphorus compound, magnesium hydroxide and zinc borate. From the same point of view, the content of flame retardant is 0.2% by weight to 2% by weight, relative to the total weight of the epoxy molding compound.
Release agent
The release agent used in the present invention is one or more selected from the group consisting of: natural or synthetic waxes.
Coupling agent
The coupling agent used in the present invention is one or more selected from the group consisting of: epoxy silanes, amino silanes, methacryl silanes, and mercapto silanes.
Pigment (I)
Various pigments can be used in the present invention. For example, the pigment is carbon black.
In a preferred embodiment of the present invention, the epoxy molding compound comprises:
(a) 2-10% by weight of an epoxy resin,
(b) 2-10% by weight of a phenolic resin,
(c)0.2 to 2% by weight of a low-stress modifier,
(d)0.2-2 wt% of an ion trapping agent,
(e)0.1 to 0.5% by weight of a curing accelerator,
(f) 80-90% by weight of a filler,
wherein the weight percentages are based on the total weight of the epoxy molding compound.
Other components of the epoxy molding compound may be as follows:
(g)0 to 15% by weight of a flame retardant,
(h)0.1 to 3% by weight of a coupling agent,
(i)0.2 to 3% by weight of a mold release agent,
(j)0.1 to 1% by weight of a pigment,
wherein the weight percentages are based on the total weight of the epoxy molding compound.
The method for producing the epoxy molding compound of the present invention is not particularly limited. In a preferred embodiment, the epoxy molding compound is prepared by a process comprising the steps of:
(1) accurately weighing each component and mixing it in a high speed mixer for 20-30 minutes;
(2) adding the liquid additive into the mixer and continuing mixing for 15-20 minutes,
(3) passing the mixed materials through a twin-screw extruder, and kneading the extruded materials at 90 to 110 ℃,
(4) finally the material is cooled and ground.
The epoxy molding compounds of the present invention are useful for packaging IC devices.
Epoxy molding compounds for IC devices can be cured by conventional molding methods, such as transfer molding, compression molding, and the like.
The disclosure may be better understood with reference to the following examples.
Examples
The present invention will be illustrated in detail by the following examples. However, it will be appreciated by those of ordinary skill in the art that this portion is merely an exemplary embodiment of the specification and is not intended to limit the broader aspects of the invention.
The measured parameters and target ranges are illustrated in table 1.
TABLE 1
| Parameter(s) | Target range | |
| 1 | Gel time, s | 25-45 |
| 2 | Spiral flow (inch) | 35-55 |
| 3 | Moisture absorption Rate (%) | 0.2-0.35 |
| 4 | Tg(℃) | 100-120 |
| 5 | CTE1(ppm) | 6-10 |
| 6 | CTE2(ppm) | 25-40 |
| 7 | Storage modulus, RM | 20000-30000 |
| 8 | Storage modulus, 175 deg.C | 500-1200 |
| 9 | Storage modulus, 260 deg.C | 600-900 |
| 10 | Adhesion (N) to Ag Lead Frame (LF) (after MSL 3) | 200-400 |
| 11 | Delamination Performance on QFP44 behind MSL3 | 0 |
| 12 | Delamination Performance on QFP44 after MSL2A | 0 |
| 13 | High temperature Ionic conductivity (180 ℃ C.) | <4.000×10-8 |
Test method
The test method for the above parameters is as follows.
1. Gel Time (GT)
The epoxy molding compound was placed on a hot plate controlled at a specified temperature of 175 ± 2 ℃. The compound was hit in a back and forth motion (spatula) until hard. A stopwatch was used in the test. The timer was started immediately after the compound was placed on the hot plate and stopped when the gel was complete.
SF (spiral flow)
Spiral flow of epoxy molding compounds is a measure of the combined characteristics of melt, melt viscosity, and gel rate under pressure under specific conditions. The test was performed in a transfer molding press using a standard spiral flow mold under specified conditions of applied temperature and pressure of controlled load mass. Spiral flow testing was performed according to the method of EMI-1-66. The test conditions were set as follows:
pressure transmission: 6.9MPa (1000psi)
Temperature of the die: 175 +/-2 ℃ or 150 +/-2 DEG C
Curing time: for 90s.
3. Moisture absorption Rate (%)
The moisture absorption rate test method was carried out according to the method of "PCT 24"; wherein the sample size is set to Φ 50 x 3 mm; and the test conditions are 121 ℃/100 RH%/2 atm/24 hours; the moisture absorption rate can be calculated as:
weight gain of coupon/weight of coupon 100% after PCT24 hours.
4.Tg
In the glass transition temperature test, the Tg of the molded product was tested. In the test, a sample from an extruder was made into a sheet by a molding machine at a molding temperature of 180 ℃ for 150 seconds. After molding, the sheet was placed in an oven at 180 ℃ for 6 hours. The sheet size was 5cm by 1cm by 0.4 cm. The Tg of the sheet was measured using DMA (dynamic thermo-mechanical analysis), where the sample was placed in a DMA machine and heated at a rate of 3 ℃/min up to 300 ℃ at a frequency of 5 Hz. The value of Tg is the peak of the tan delta plot.
5.CTE1
6.CTE2
Alpha 1(CTE1) and alpha 2(CTE2) were tested by TMA.
As the temperature is increased at a controlled rate, the thermomechanical analyzer measures linear changes in sample size and records the dimensional change-temperature curve. α 1 is calculated in the temperature range below Tg and α 2 is calculated in the temperature range above Tg. The average expansion coefficient a is typically above the linear portion of the curve.
CTE1&2 values were determined using a thermo-mechanical Analyzer Q-400 from TA Instruments, and the test conditions were as follows: the coupons were heated from room temperature to 280 ℃ at a rate of 10 ℃/min and a load of 0.1N.
7. Storage modulus (RM)
8. Storage modulus (175 ℃ C.)
9. Storage modulus (260 ℃ C.)
The storage modulus was determined by Dynamic Mechanical Analysis (DMA) and the change in viscoelastic properties of the material as a function of temperature was measured. The sample was oscillated at a fixed amplitude at a specified heating rate. The DMA curve provides information on plasticizer effect, molecular motion, stress relaxation, hardness or stiffness.
In the test, a sample from an extruder was passed through a molding machine at a molding temperature of 180 ℃ for 150 seconds, and after molding, the sheet was placed in an oven at a temperature of 180 ℃ for 6 hours. The sheet size was 5cm by 1cm by 0.4 cm. The sample was placed in a DMA machine and heated to 300 ℃ at a heating rate of 3 ℃/min at a frequency of 5 Hz.
10. Adhesion on silver Ag Lead Frame (LF)
Test method was designed by Henkel to determine the adhesion strength between epoxy molding compounds and leadframe surfaces, where leadframes have different plating including Cu, Ni, Ag, and Ni/Pd/Au plated bars. First, the LF molding material was pulled with a tab (tap pull) at a specific temperature (175 ± 2 ℃), then the package was subjected to reliability tests (e.g. PMC, MSL tests) and finally to tensile tests to determine the EMC adhesion of different plated LF types.
Delamination Performance on QFP44 after MSL3
Delamination Performance on QFP44 after MSL2A
First, the material was molded with QFP44LF at a temperature (175. + -. 2 ℃ C.). The QFP44 packages were then tested for delamination, and MSL3 and MSL2A were tested according to the JEDEC JESD22-A113D standard.
13. High temperature Ionic conductivity (180 ℃ C.)
In a typical test, a sample is placed in contact with two electrodes (dielectric sensors) and a sinusoidal voltage (the excitation voltage) is applied to one electrode. The resulting sinusoidal current (response) is measured at the second electrode.
Testing the sheet: solid polymer sheets/films
Measuring the temperature: room temperature to 350 ℃ (if equipped with liquid nitrogen, the temperature can be further lowered to-190 ℃) measurement frequency: 12 Hz-100 KHz
Raw materials:
the raw materials used in the examples and their sources are shown in table 2.
TABLE 2
The raw materials used for the epoxy molding compound of each example were weighed. All raw materials were added to a high speed mixer and mixed at 300r/min for 15 minutes at room temperature to obtain a premixed powder. The premixed powder was then placed in the hopper of an extruder and extruded at approximately 100 ℃ at a blade speed of 120 rpm. The resulting extruded material was pulverized into a powder.
The proportion of the ingredients is as follows:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 1:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine derivative, 0.2%
Example 2:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
0.2 percent of 2-phenyl-4-methylimidazole curing accelerator
Example 3:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 86.7%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
1 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 4:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 86.7%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion ion trapping agent and 0.5 percent of cation ion trapping agent
Organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 5:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 86.7%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
Zirconia and bismuth oxide type trapping agent, 1%
Organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 6:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion trapping agent,
1 percent of metal hydroxide flame retardant
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 7:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion trapping agent,
1 percent of metal oxide flame retardant
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 8:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized silicone glycidyl resin type low stress modifier, 0.5%
0.5 percent of anion trapping agent,
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 9:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Epoxidized polybutadiene Low stress modifier, 0.5%
0.5 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 10:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
0.5 percent of silicon rubber low-stress modifier
0.5 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 11:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
Reactive liquid polymer rubber CTBN, 0.5%
0.5 percent of anion trapping agent,
organic phosphorus flame retardant, 1%
0.3 percent of carbon pigment
Triphenylphosphine curing accelerator (TPP), 0.2%
Example 12:
polyaromatic epoxy resin (MAR), 5.2%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
0.5 percent of silicon rubber low-stress modifier
Zirconia and bismuth oxide type trapping agent, 1%
0.3 percent of carbon pigment
Triphenylphosphine derivative, 0.2%
Example 13:
polyaromatic epoxy resin (MAR), 3.4%
Biphenyl type epoxy resin (BP), 1.8%
Phenol biphenyl aralkyl resin, 3.8%
Spherical silica, 87.2%
0.7% of gamma-glycidyloxy-trimethoxy and mercaptopropyltrimethoxy silanes
0.6 percent of release agent
0.5 percent of silicon rubber low-stress modifier
Zirconia and bismuth oxide type trapping agent, 1%
0.3 percent of carbon pigment
Triphenylphosphine derivative, 0.2%.
The compositions of the epoxy molding compounds of the examples are summarized in table 3.
TABLE 3
The test results for the example parameters are summarized in table 4.
Examples 1 and 2 changed the catalyst type to improve high temperature leakage and delamination performance compared to the reference. As can be seen from the above test results, the high temperature ionic conductivity performance of examples 1 and 2 is superior to that of the reference. The delamination performance of example 1 was better than the reference, but example 2 was worse than the reference.
Examples 3, 4 and 5 have the ion trapping system and content changed to improve high temperature leakage and delamination performance compared to the reference. As can be seen from the above test results, the high temperature ionic conductivity performance of examples 4 and 5 is superior to that of the reference. The delamination behavior of examples 3, 4, 5 is similar to that of the reference.
Examples 6, 7 and 8 have varied flame retardant systems and levels compared to the reference to improve high temperature leakage and delamination performance. From the test results, it can be seen that the delamination performance of example 8 is better than the reference, and examples 6 and 7 are similar to the reference. As can be seen from the high temperature ionic conductivity test results, examples 7 and 8 are better than the reference, and example 8 is significantly better than the reference.
Examples 9, 10 and 11 have modified the low stress modifier system and level compared to the reference to improve high temperature leakage and delamination performance. From the test results, examples 9, 10, 11 delaminated better than the reference. As can be seen from the high temperature ionic conductivity test results, examples 9, 10 and 11 are superior to the reference ratio, and example 10 is significantly superior to the reference ratio.
Example 12 changes the catalyst type, ion trapping system, flame retardant system and optimizes the levels to improve high temperature leakage and delamination performance compared to the reference. From the test results, it can be seen that the delamination performance of example 12 is similar to the reference, but the high temperature ionic conductivity results are significantly better than the reference.
Example 13 changes the resin type, catalyst type, ion trapping system, flame retardant system, low stress modifier type and optimizes the levels to improve high temperature leakage and delamination performance compared to the reference. From the test results, it can be seen that the delamination performance of example 13 after MSL2A is significantly better than the reference. Meanwhile, the high-temperature ionic conductivity is also obviously superior to that of the reference ratio.
These and other modifications and variations to the present invention may be practiced by those of ordinary skill in the art, without departing from the spirit and scope of the present invention. Further, it should be understood that aspects of the various embodiments may be interchanged both in whole and in part. Furthermore, those of ordinary skill in the art will appreciate that the foregoing description is by way of example only, and is not intended to limit the invention so further described in such appended claims.
Claims (12)
1. An epoxy molding compound comprising:
(a) 2-10% by weight of an epoxy resin,
(b) 2-10% by weight of a phenolic resin,
(c)0.2 to 2% by weight of a low-stress modifier,
(d)0.2-2 wt% of an ion trapping agent,
(e)0.1 to 0.5% by weight of a curing accelerator,
(f) 80-90% by weight of a filler,
wherein the weight percentages are based on the total weight of the epoxy molding compound,
it is characterized in that the preparation method is characterized in that,
the low stress modifier is one or more selected from the group consisting of: epoxy group-containing silicone resins, amino group-containing silicone resins, epoxy group-and polyether group-containing silicone resins, epoxidized polybutadiene rubbers, and silicone rubbers having a core-shell structure,
the ion trap is one or more selected from the group consisting of: hydrotalcite, hydroxides or oxides of magnesium, zirconium, aluminum, bismuth, antimony and titanium,
the cure accelerator is one or more selected from the group consisting of: amine compound, organic phosphorus compound, triphenylphosphine and its derivative, and imidazole type compound, and
the epoxy molding compound further comprises a flame retardant, wherein the flame retardant is present in an amount of 0.2 wt.% to 1 wt.%.
2. The epoxy molding compound of claim 1, wherein the low stress modifier comprises a silicone rubber having a core-shell structure.
3. The epoxy molding compound of claim 1, wherein the ion scavenger comprises zirconium oxide and bismuth oxide.
4. The epoxy molding compound of claim 1, wherein the cure accelerator comprises a triphenylphosphine-1, 4-benzoquinone adduct.
5. The epoxy molding compound of claim 1, wherein the molar ratio of the number of hydroxyl groups in the phenolic resin to the number of epoxy groups in the epoxy resin is from 0.5 to 1.5.
6. The epoxy molding compound of claim 1, wherein the filler is one or more selected from the group consisting of: crystalline silica, fused silica, spherical silica, titanium dioxide, aluminum hydroxide, magnesium hydroxide, zirconium dioxide, calcium carbonate, calcium silicate, carbon fiber, and glass fiber.
7. The epoxy molding compound of claim 1, wherein the flame retardant is one or more selected from the group consisting of: brominated epoxy flame retardants, antimony oxide, organic phosphorus compounds, melamine, aluminum hydroxide, magnesium hydroxide, zinc borate, and titanium oxide.
8. The epoxy molding compound of claim 1, wherein the epoxy molding compound further comprises a coupling agent.
9. The epoxy molding compound of claim 1, wherein the epoxy molding compound further comprises a mold release agent.
10. The epoxy molding compound of claim 1, wherein the epoxy molding compound further comprises a pigment.
11. A method of making the epoxy molding compound of any one of claims 1-10, comprising the steps of:
(1) each component was precisely weighed and mixed in a high speed mixer,
(2) adding liquid additives to the mixer and continuing mixing,
(3) passing the mixed materials through a twin-screw extruder, and kneading the extruded materials,
(4) finally the material is cooled and ground.
12. Use of the epoxy molding compound of any one of claims 1-10 in high power SOIC semiconductor packaging applications.
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| CN112980137B (en) * | 2019-12-17 | 2024-02-02 | 衡所华威电子有限公司 | Epoxy molding compound and preparation method and application thereof |
| CN114644810B (en) * | 2020-12-18 | 2024-03-01 | 衡所华威电子有限公司 | High-temperature fast-curing low-stress epoxy resin composition and preparation method thereof |
| CN113817291B (en) * | 2021-09-30 | 2022-07-08 | 广东博汇新材料科技有限公司 | Carbon fiber vacuum infusion epoxy resin |
| CN114940805A (en) * | 2022-05-09 | 2022-08-26 | 衡所华威电子有限公司 | Low-stress low-water-absorption epoxy plastic packaging material for semiconductor packaging and preparation method thereof |
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| JP2006233016A (en) * | 2005-02-24 | 2006-09-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN103450632A (en) * | 2012-05-28 | 2013-12-18 | 汉高华威电子有限公司 | Epoxy resin composition for electronic packaging and preparation method thereof |
| CN104277417A (en) * | 2013-07-01 | 2015-01-14 | 北京首科化微电子有限公司 | Epoxy resin composition containing composite flame retardant |
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| CN102675601B (en) * | 2012-05-17 | 2014-06-25 | 江苏华海诚科新材料有限公司 | Low-warpage epoxy resin composite used for QFN (Quad Flat No Lead) |
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| JP2006233016A (en) * | 2005-02-24 | 2006-09-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN103450632A (en) * | 2012-05-28 | 2013-12-18 | 汉高华威电子有限公司 | Epoxy resin composition for electronic packaging and preparation method thereof |
| CN104277417A (en) * | 2013-07-01 | 2015-01-14 | 北京首科化微电子有限公司 | Epoxy resin composition containing composite flame retardant |
| CN104341774A (en) * | 2013-07-29 | 2015-02-11 | 三星电机株式会社 | Molding composition for semiconductor package and semiconductor package using same |
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| WO2016145648A1 (en) | 2016-09-22 |
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