CN108140611A - 开关元件以及负载驱动装置 - Google Patents

开关元件以及负载驱动装置 Download PDF

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CN108140611A
CN108140611A CN201680033010.2A CN201680033010A CN108140611A CN 108140611 A CN108140611 A CN 108140611A CN 201680033010 A CN201680033010 A CN 201680033010A CN 108140611 A CN108140611 A CN 108140611A
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switch element
mosfet
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control electrode
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CN108140611B (zh
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和田真郎
和田真一郎
大岛隆文
池谷克己
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Abstract

本发明的目的在于，提供能够不使导通耐压降低地抑制导通电阻的特性变化的开关元件以及负载驱动装置。本发明的特征在于，具有：控制用电极；有源元件区域；以及无源元件区域，所述有源元件区域和所述无源元件区域相邻地形成在所述控制用电极上。或者，在具有电流驱动用开关元件和与所述负载驱动用开关元件并联连接的、用于对所述负载驱动用开关元件的通电电流进行检测的电流检测用开关元件的负载驱动装置中，至少所述电流检测用开关元件具有：控制用电极；有源元件区域；以及无源元件区域，所述有源元件区域和所述无源元件区域相邻地形成在所述控制用电极上。

Description

开关元件以及负载驱动装置
技术领域
本发明涉及电流检测用MOSFET等开关元件、以及使用该开关元件的负载驱动装置，尤其涉及适合以高精度控制马达、螺线管等电动执行器的电流检测用MOSFET以及使用该电流检测用MOSFET的负载驱动装置。
背景技术
以往，已知有设置了有源元件区域和无源元件区域的开关元件(例如专利文献1)。记载有如下内容：在该开关元件中，考虑到由结晶缺陷引起的泄漏等所造成的特性劣化地设定无源元件区域的虚拟栅的间距。并且有源元件区域的控制用电极被设置为不到达无源元件区域。
现有技术文献
专利文献
专利文献1：日本专利特开2007－149869号公报
发明内容
【发明要解决的问题】
然而，在上述现有的开关元件中，由于栅极至少在有源区域和无源区域分离，所以在具有直线状的栅极的横型MOS晶体管中恐怕截止耐压(オフ耐圧)会在分离部区域降低。
因此，本发明的目的在于，提供一种不使元件的截止耐压降低就能够抑制导通电阻的特性变化的开关元件以及负载驱动装置。
用于解决问题的手段
本发明的特征在于，具有控制用电极、有源元件区域、以及无源元件区域，所述有源元件区域和所述无源元件区域相邻地形成在所述控制用电极上。
发明效果
根据本发明，能够不使开关元件的截止耐压降低地抑制导通电阻的特性变化。
附图说明
图1的(a)是本发明的实施例1所涉及的电流检测用MOSFET的平面布置图，(b)是由(a)的A1－A1’所示的区域的纵向截面图，(c)是由(a)的A2－A2’所示的区域的纵向截面图。
图2是示出本发明的实施例1所涉及的电流检测用MOSFET与图3所示的比较例的结构的MOSFET的导通电阻增大的时间变化量的图。
图3是比较例的结构的MOSFET的平面布置图。
图4是针对本发明的实施例1所涉及的电流检测用MOSFET的导通电阻增大的时间变化量示出无源MOSFET区域的宽度(Wy)依存性的图。
图5的(a)是本发明的实施例2所涉及的电流检测用MOSFET的平面布置图，(b)是由(a)的A1－A1’所示的区域的纵向截面图，(c)是由(a)的A2－A2’所示的区域的纵向截面图。
图6是本发明的实施例3所涉及的负载控制以及电流控制装置中的电流检测用MOSFET和电流驱动MOFET的平面布置图。
图7是本发明的实施例3所涉及的负载控制装置的电路图。
图8是示出栅宽比为1：2000且尺寸迥异的现有的电流检测用MOSFET和电流驱动用MOSFET的导通电阻的时间变化量的图。
具体实施方式
以下，对本发明的实施方式所涉及的电流检测用MOSFET以及使用该电流检测用MOSFET的负载控制装置进行说明。另外，在本实施例中，虽然是对采用NMOSFET的情况进行说明，但也可以是PMOSFET。而且，也可以是IGBT等双极型晶体管。
实施例1
采用图1对本发明的实施方式的电流检测用MOSFET的结构进行说明。图1的(a)是实施例1的电流检测用MOSFET的平面布置图。而且，图1的(b)示出由图1的(a)的A1－A1’所示的区域的纵向截面图，图1的(c)示出由图1的(a)的A2－A2’所示的区域的纵向截面图。
在具有SOI层3的半导体基板4上形成有埋入了绝缘膜的绝缘用沟道5，在埋入式绝缘膜6上形成有具有多个栅极层11a、11b的MOSFET，所述多个栅极层11a、11b具有场板(フィールドプレート)。在MOSFET中，连续地形成有有源MOSFET区域1以及无源MOSFET区域2a，在该有源MOSFET区域1中，在对栅极层11a施加电压时，电流在半导体基板4上流过；在该无源MOSFET区域2a中，在绝缘用沟道5和有源MOSFET区域1之间，电流不在半导体基板4上流过。另外，无源MOSFET区域2a是通过在源极区域形成极性与源极13相反的杂质层而不设置源极而形成的。
在无源MOSFET区域2a中，即使对栅极11a和漏极12a施加电压，由于没有源极13，没有成为载体的电子的注入，所以漏极电流不流动。
另一方面，在栅极11a与源极13间的电压为0、有源MOSFET区域1为截止状态的情况下，无源MOSFET区域2a的耐压与有源MOSFET区域1的截止耐压相等，MOSFET的截止耐压不发生变化。这是因为，由于栅极场板11a以及漏极漂移9b跨越有源MOSFET区域1和无源MOSFET区域2a连续地配置，所以能够使两者之间的决定截止耐压的漏极漂移9b内的电场分布一致。
进一步地，绝缘用沟道5和有源MOSFET区域1之间的栅极层11b、以及漏极12b通过配线层16b与源极13电连接，形成电流不在半导体基板4上流动的无源MOSFET区域2b。
在此，发明者在图2中示出通过本实施例的结构测量到的、由于热载流子效应(热载流子效应)所引起的导通电阻增大的时间变化量。如图3所示那样，比较例的结构是没有无源MOSFET区域的结构。导通电阻的增大比例量在比较例的结构中比较大，在本实施例的结构中较小。另一方面，虽没有在图中记载，但有源MOSFET区域的栅宽相互相等，初始的导通电阻值相互相等，截止耐压也相互相等。
而且，发明者为了验证无源区域的效果，针对导通电阻的变化量测量相对于Y方向的无源区域2a的宽度(Wy)的依存性所得到的结果在图4中示出。
在此，设X方向的无源区域2b的宽度(Wx)是固定的，为12μm。由此可知，在无源区域2a的宽度增大的同时，导通电阻的变化量减少，在宽度为15μm和30μm的结构下未发现差别，变化量具有饱和的倾向。
而且，虽然没有图示，但可知X方向的无源区域2b的宽度(Wx)的依存性也与Y方向的无源区域2a的宽度(Wy)同样地，在宽度增大的同时，导通电阻的变化量减少，具有饱和的倾向。
基于以上的结果，将无源区域2a的宽度设为：至少使得来自绝缘用沟道的应力的影响变小的绝缘用沟道深度以上的距离，由此来实现本发明中的效果。
而且，例如如日本专利特开2010－258226号公报所记载的那样，热载流子效应所引起的导通电阻的变化是由STI边缘部的氧化层与Si基板4的界面中的电子阱导致的，因此认为接近于绝缘用沟道5的MOSFET的STI边缘部与处于远离绝缘用沟道5的区域中的MOSFET的STI边缘部相比，氧化膜与Si基板4的界面中的电子阱的量变多。
在此，由于电流检测用MOSFET的尺寸比电流驱动用MOSFET的尺寸小，所以位于绝缘用沟道附近的MOSFET区域所占的比例相对较大。其结果，认为与电流驱动用MOSFET相比，电流检测用MOSFET的导通电阻的变化量更大。
根据本实施例，在电流检测用MOSFET中，将导通电阻的变化量大的接近绝缘用沟道5的MOSFET区域设为漏极电流不流动的无源区域2a、2b，将远离绝缘用沟道5的MOSFET区域设为漏极电流流动的有源区域1。由此，能够减低由热载流子效应所引起的导通电阻的变化量，能够使该导通电阻的变化量与电流驱动用MOSFET是相同程度。其结果，能够抑制电流感测比(電流センス比)的时间变动，提高电流检测的精度。
如上所述，本实施例的MOSFET具有：半导体基板、设置于所述半导体基板上的绝缘用沟道、以及MOSFET区域，所述MOSFET区域以被所述绝缘用沟道包围的方式设置在所述半导体基板上，具有位于埋入式绝缘膜上的栅极，所述栅极具有延长至漏极漂移区域的场板区域，在所述MOSFET区域中，漏极电流流动的有源MOSFET区域、以及设置在所述绝缘用沟道和所述有源MOSFET区域之间的漏极电流不流动的无源MOSFET区域跨越所述栅极而连续地形成。
根据上述构成，能够减小由热载流子效应所引起的MOSFET的导通电阻的时间增大量。进一步地，通过跨越有源MOSFET区域和无源MOSFET区域而连续地形成对漏极漂移区域的电场进行缓和的场板区域，能够维持MOSFET的截止耐压。
而且，本实施例的MOSFET是与电流驱动用MOSFET并联连接的、用于对所述电流驱动用MOSFET的通电电流进行检测的电流检测用MOSFET，其中，具备：设置在所述半导体基板上的绝缘用沟道，以及MOSFET区域，所述MOSFET区域以被所述绝缘用沟道包围的方式设置，所述MOSFET区域具有位于埋入式绝缘膜上的栅极和将栅极延长至漏极漂移区域的场板区域，所述MOSFET区域具备：漏极电流流动的有源MOSFET区域、以及设置于所述绝缘用沟道和所述有源MOSFET区域之间的、漏极电流不流动的无源MOSFET区域。
根据上述构成，能够抑制电流感测比的时间变动，提高电流检测用MOSFET的电流检测的精度。
优选为，所述无源MOSFET区域分别在与所述多个栅极的排列方向平行的方向和与所述多个栅极的排列方向垂直的方向上设置，在所述无源MOSFET区域的源极区域中形成有杂质层，所述杂质层的极性与形成源极的杂质层的极性相反。
根据上述构成，可以将无源MOSFET区域的结构做成在有源MOSFET区域的源极区域以外都相同的结构，能够维持截止耐压等特性。
而且，优选为，所述半导体基板是SOI基板，所述绝缘用沟道的深度与Si活性层的厚度相等，以所述有源MOSFET区域与所述绝缘用沟道的距离至少比所述绝缘用沟道的深度大的方式形成所述无源MOSFET区域。
根据上述构成，在有源MOSFET区域中，能够减小从绝缘用沟道至Si基板的应力等的影响，能够抑制由热载流子效应所引起的MOSFET的导通电阻的时间变化，所以能够抑制电流感测比的时间变动，提高电流检测用MOFET的电流检测的精度。
而且，优选为，所述无源MOSFET区域具备：与所述多个栅极的排列方向平行地配置的第一无源MOSFET区域、以及与所述多个栅极的排列方向垂直地配置的第二无源MOSFET区域，所述第二无源MOSFET区域的栅极与所述有源MOSFET区域的源极电连接。
而且，优选为，所述无源MOSFET区域具备：与所述多个栅极的排列方向平行地配置的第一无源MOSFET区域、以及与所述多个栅极的排列方向垂直地配置的第二无源MOSFET区域，在所述第二无源MOSFET区域中没有栅极，所述第二无源MOSFET区域的漏极与所述有源MOSFET区域的源极电连接。
根据上述构成，能够在不使电流检测用MOSFET的截止耐压性能降低、进而不会改变有源MOSFET区域的电流性能的情况下，抑制电流感测比的变动，其结果，能够提高电流检测用MOSFET的电流检测的精度。
而且，本实施例的MOSFET具有电流驱动用MOSFET、以及与所述电流驱动用MOSFET并联连接并用于检测所述电流驱动用MOSFET的通电电流的电流检测用MOSFET，其中，所述电流检测用MOSFET具备：被设置于所述半导体基板上的绝缘用沟道、以及MOSFET区域，所述MOSFET区域以被所述绝缘用沟道包围的方式设置在所述半导体基板上，具有位于埋入式绝缘膜上的栅极，所述栅极具有延长至漏极漂移区域的场板区域，在所述MOSFET区域中，有源MOSFET区域以及设置于所述绝缘用沟道和所述有源MOSFET区域之间的无源MOSFET区域跨越所述栅极地连续形成，所述电流检测用MOSFET的栅极间的间隔与所述驱动用MOSFET的栅极的间隔相等。
根据上述构成，能够抑制电流驱动用MOSFET与电流检测用MOSFET的由热载流子所引起的导通电阻的增大量差，能够抑制电流感测比的时间变动，所以能够提高负载控制装置的电流控制的精度。
而且，优选为，所述电流检测用MOSFET的栅宽与所述驱动用MOSFET的栅宽相比，为1/100以下。
根据上述构成，在电流检测用MOSFET流动的检测电流相对于在电流驱动用MOSFET流动的驱动电流而言足够小，所以能够减小负载控制装置的损失。
以下，对将上述开关元件的结构适用于电流检测用MOSFET的情况的意义进行说明。
近年来，随着车载搭载部件的电子控制化的发展，马达、螺线管等电动执行器被经常采用。要使电动执行器的控制高精度化，就需要高精度地控制电动执行器的驱动电流值。因此，要求高精度地对电动执行器的驱动电流值进行检测。
在高精度地对驱动电流值进行检测的方法之中，作为与采用电阻元件的方法相比，损耗较少且高效率地进行的方法，存在有将进行电流检测的电流检测用MOSFET并联连接于输出驱动电流的电流驱动用MOSFET的方法(例如，参照日本专利特开2006－203415号公报)。相对于电流驱动用MOSFET，将电流检测用MOSFET的栅宽设为1/100至1/1000左右，由此在电流检测用MOSFET中流动的电流能够相对于在电流驱动用MOSFET中流动的驱动电流而言为1/100至1/1000左右，所以能够进行低损耗的电流检测。
在此，MOSFET由于导通动作时的电流的碰撞电离所造成的向氧化膜中的电子阱效应(热载流子效应)，而产生电特性的劣化。尤其是，在采用0.25μm以下的微细工艺的LDMOSFET的情况下，多采用STI(Shallow Trench Isolation(浅沟道隔离))作为厚的氧化膜，但在STI的角部会产生导通动作时的电流集中，导通电阻随着时间经过而增大(例如，日本专利特开2010－258226号公报)。
另一方面，电流检测用MOSFET的电流检测的精度依赖于电流驱动用MOSFET与电流检测用MOSFET的电流比(感测比：将分子设为电流检测用MOSFET的电流值，将分母设为电流驱动用MOSFET的电流值)的精度。因此，只要电流驱动用MOSFET和电流检测用MOSFET各自的电流变化的比例相同，电流感测比就不会有发生变化，所以由前述的热载流子效应所引起的、MOSFET的导通电阻的增大不成为问题。
然而，此次发现了如下的现象：在具有由形成于半导体基板上的以绝缘分离为目的的沟道包围的多个栅极的MOSFET中，在MOSFET的栅宽即尺寸不同的电流驱动用MOSFET和电流检测用MOSFET中，由热载流子效应所引起的导通电阻的增大比例量不同(图8)。与尺寸大的电流驱动用MOSFET相比，尺寸小的电流检测用MOSFET的导通电阻增大的比例量较大，所以电流感测比随着动作时间经过而降低。因此，在采用电流检测的电流检测用MOSFET的负载控制以及电流控制装置中，也存在电流检测的精度降低这样的问题。
关于这一点，只要是上述的开关元件，就能够得到降低由热载流子效应所引起的导通电阻的时间变化量的电流检测用的MOSFET。而且，能够得到能抑制电流感测比的时间变动、能够提高电流检测用MOSFET的驱动电流量的检测精度的电流检测用MOSFET。
实施例2
接下来采用图5对实施例2的电流检测用MOSFET的结构进行说明。图5的(a)为本实施例的电流检测用MOSFET的平面布置图。而且，图5的(b)示出由图5的(a)的A1－A1’所示的区域的纵向截面图，图5的(c)示出由图5的(a)的A2－A2’示出的区域的纵向截面图。
在具有SOI层3的半导体基板4上形成有埋入了绝缘膜的绝缘用沟道5，在埋入式绝缘膜6上形成有具有多个栅极层11a的MOSFET，所述多个栅极层11a具有场板。在MOSFET中，在对栅极层11a施加电压时电流在半导体基板4上流动的有源MOSFET区域1、以及在绝缘用沟道5和有源MOSFET区域1之间电流不在半导体基板4上流动的无源MOSFET区域2a连续地形成。另外，无源MOSFET区域2a是通过在源极区域形成极性与源极相反的杂质层而不设置源极而形成的。
进一步地，位于绝缘用沟道5和有源MOSFET区域1之间的漏极12b通过配线层16b与源极13电连接，形成电流不在半导体基板4上流动的无源MOSFET区域2b。与图1所示的记载的实施例1的结构不同之处在于，没有栅极层11b，但由于在漏极12b和源极13之间不施加电压，所以可以没有成为用于确保无源区域2b的截止耐压的场板的栅极层11b。
由此，与图1所示的实施例1同样地，能够降低电流驱动用MOSFET的导通电阻的变化量，能够使该变化量与电流驱动用MOSFET为相同程度。其结果，能够抑制电流感测比的时间变动，能够提高电流检测的精度。
实施例3
基于图6和图7对实施例3进行说明。图6示出采用例如线性螺线管作为图7所示的电磁负载的负载控制装置34中的、电流检测用MOSFET20和电流驱动用MOSFET21的平面布置图。电流检测用MOSFET20和电流驱动用MOSFET21都被绝缘用沟道5包围，都具有多个栅极，且电流检测用MOSFET20的栅极层11a、11b的间隔与电流驱动用MOSFET21的栅极层11的间隔和电流驱动用MOSFET21相等。由此，每单位栅长的MOSFET的电流特性以及截止耐压在电流检测用MOSFET20和电流驱动用MOSFET21中都是相等的。
如图1所示的那样，电流检测用MOSFET20将接近于绝缘用沟道5的MOSFET区域设为无源区域2a、2b，将被无源区域2a、2b包围的远离绝缘用沟道5的MOSFET区域设为有源区域1。无源区域2b的栅极11b以及漏极12b通过配线层16b与源极13电连接。而且，有源区域1和无源区域2a的栅极11a通过配线层18与电流驱动用MOSFET21的栅极11电连接。进一步地，有源区域1和无源区域2a的漏极12a与电流驱动用MOSFET21的漏极12电连接。
而且，如图7所示，各MOSFET的源极13被输入至运算放大器，而相互成为虚短路状态，所以电流检测用MOSFET27和电流驱动用MOSFET26的各端子电压始终相同。其结果，在电流检测用MOSFET27中流动的检测电流和在电流驱动用MOSFET26中流动的驱动电流与各自的栅宽成比例。在图6中，电流检测用MOSFET20的栅宽相对于电流驱动用MOSFET21的栅宽而言较小，为1/100～1/5000，在电流检测用MOSFET20中流动的检测电流足够小，所以低损耗的电流控制是可能的。而且，电流检测用MOSFET20的尺寸与电流驱动用MOSFET21的尺寸相比足够小，所以在电流检测用MOSFET20设置无源区域2a、2b所造成的芯片尺寸增大的影响较小。而且，如各实施例中的前述说明那样，由于能够减小电流检测用MOSFT27的导通电阻的变化量，使该变化量与电流驱动用MOSFET26的导通电阻的变化量基本相等，所以能够抑制电流感测比的变动，能够提高负载控制装置中的电流控制。
而且，在图7中，在高端电流检测电路22的电流检测用MOSFET25中，也能够实现与前文所述的低端电流检测电路23的电流检测用MOSFET27同样的效果。
在上述实施方式中，以具有作为控制用电极的栅极、源极、漏极的MOSFET为例进行了说明，但并不限定于此，本发明也可以适用于例如具有作为控制用电极的基极、集电极、发射极的双极型晶体管等其他开关元件。
符号说明
1 有源MOSFET区域
2a 无源MOSFET区域(y方向)
2b 无源MOSFET区域(x方向)
3 SOI层
4 Si基板
5 绝缘用沟道
6 STI(Shallow Trench Isolation)
7 除漏极以外的没有形成STI的MOSFET区域
8 Body区域
9a 有源MOSFET区域和无源MOSFET区域(2a)的漏极漂移层
9b 无源MOSFET区域(2b)的漏极漂移层
10 栅极氧化膜
11a 有源MOSFET区域和无源MOSFET区域(2a)的栅极层
11b 无源MOSFET区域(2b)的栅极层
12a 有源MOSFET区域和无源MOSFET区域(2a)的漏极
12b 无源MOSFET区域(2b)的漏极
13 源极
14 Body连接用的杂质扩散层
15 配线层连接接点
16a 漏极配线层
16b 连接无源MOSFET区域(2b)和源极的配线层
17 连接电流驱动用MOSFET的漏极的配线层
18 连接电流驱动用MOSFET的栅极和电流检测用MOSFET的栅极的配线层
19 连接电流驱动用MOSFET的漏极和电流检测用MOSFET的漏极的配线层
20 电流检测用MOSFET
21 电流驱动用MOSFET
22 高端电流检测电路
23 低端电流检测电路
24 高端电流驱动用NMOSFET
25 高端电流检测用NMOSFET
26 低端电流驱动用NMOSFET
27 低端电流检测用NMOSFET
28 电阻元件
29 电磁负载
30 升压电路
31 电源
32 高端前置驱动器
33 低端前置驱动器
34 负载控制装置。

Claims (12)

1.一种开关元件，其特征在于，具有：
控制用电极；
有源元件区域；以及
无源元件区域，
所述有源元件区域和所述无源元件区域相邻地形成在所述控制用电极上。
2.如权利要求1所述的开关元件，其特征在于，
所述开关元件具有半导体基板，
所述控制用电极被安装在所述半导体基板上。
3.如权利要求2所述的开关元件，其特征在于，
所述开关元件具有被设置于所述半导体基板上的绝缘用沟道，
所述有源元件区域和所述无源元件区域以被所述绝缘用沟道包围的方式设置，
所述无源元件区域被设置在所述绝缘用沟道和所述有源元件区域之间。
4.如权利要求3所述的开关元件，其特征在于，
所述开关元件是电流检测用开关元件，该电流检测用开关元件与负载驱动用开关元件并联连接，用于检测由所述负载驱动用开关元件产生的针对负载的通电电流。
5.如权利要求4所述的开关元件，其特征在于，
所述控制用电极具有延长至漏极漂移区域的场板区域。
6.如权利要求5所述的开关元件，其特征在于，
所述无源元件区域被分别设置在与所述控制用电极的排列方向平行的方向和与所述控制用电极的排列方向垂直的方向上，
在所述无源元件区域的源极区域中形成有杂质层，所述杂质层的极性与形成源极的杂质层的极性相反。
7.如权利要求6所述的开关元件，其特征在于，
所述半导体基板为SOI基板，所述绝缘用沟道的深度与Si活性层的厚度相等，
以所述有源元件区域与所述绝缘用沟道的距离至少比所述绝缘用沟道的深度大的方式来形成所述无源元件区域。
8.如权利要求6所述的开关元件，其特征在于，
所述无源元件区域具有：
与所述控制用电极的排列方向平行地配置的第一无源元件区域；以及
与所述控制用电极的排列方向垂直地配置的第二无源元件区域，
所述第二无源元件区域的控制用电极与所述有源元件区域的源极电连接。
9.如权利要求6所述的开关元件，其特征在于，
所述无源元件区域具有：
与所述控制用电极的排列方向平行地配置的第一无源元件区域；以及
与所述控制用电极的排列方向垂直地配置的第二无源元件区域，
所述第二无源元件区域的漏极与所述有源元件区域的源极电连接。
10.如权利要求4所述的开关元件，其特征在于，
所述电流检测用开关元件的控制用电极间的间隔与所述电流驱动用开关元件的控制用电极的间隔相等。
11.如权利要求10所述的开关元件，其特征在于，
所述电流检测用开关元件的控制用电极宽度与所述负载驱动用开关元件的控制用电极宽度相比，为1/100以下。
12.一种负载驱动装置，其具有电流驱动用开关元件和电流检测用开关元件，所述电流检测用开关元件与所述负载驱动用开关元件并联连接，用于对所述负载驱动用开关元件的通电电流进行检测，所述负载驱动装置的特征在于，
至少所述电流检测用开关元件具有：
控制用电极；
有源元件区域；以及
无源元件区域，
所述有源元件区域和所述无源元件区域相邻地形成在所述控制用电极上。
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