CN108122962A - A kind of insulated gate bipolar transistor - Google Patents
A kind of insulated gate bipolar transistor Download PDFInfo
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- CN108122962A CN108122962A CN201711255213.9A CN201711255213A CN108122962A CN 108122962 A CN108122962 A CN 108122962A CN 201711255213 A CN201711255213 A CN 201711255213A CN 108122962 A CN108122962 A CN 108122962A
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- 239000012774 insulation material Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 2
- 230000005404 monopole Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 31
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- 239000000243 solution Substances 0.000 description 2
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- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
The invention belongs to technical field of semiconductors, more particularly to a kind of insulated gate bipolar transistor.The present invention is on the basis of traditional longitudinal IGBT device structure, IGBT shunting zones are set and the 3rd electrode extended structure and the 3rd highly doped receiving area of electrode district are set at the 3rd electrode, on the one hand the shunting of different carriers can be realized, and the second class carrier, first kind carrier high density passage are respectively formed at first electrode and the 3rd electrode respectively, it circulates so as to fulfill shutdown moment carrier monopole is carried, and then improves turn-off speed；In addition, drift region is tied using the P/N being laterally arranged alternately, drift region internal electric field transverse modulation under off state, it is possible to have higher is positive/negative to blocking ability.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of insulated gate bipolar transistor.
Background technology
Insulated gate bipolar transistor (IGBT) is used as a kind of integrated technology, is mixed with MOSFET structure and dipole is brilliant
The working mechanism of body pipe.Conventional IGBT device structure schematic diagram as shown in Figure 1 and corresponding schematic equivalent circuit, in routine
In IGBT structure figure, IGBT includes first electrode 101, second electrode 102, the 3rd electrode 103, second electrode insulating layer 201, n
Type high-dopant concentration launch site 301, p-type high-dopant concentration emitter contact zone 302, p-type base 303, n-type drift region 402, n
Xing Chang cutoff layers area 305, p-type collecting zone 306.
When 102 voltage of second electrode is higher than the threshold voltage of device in itself, close to second electrode in p type emitter base
102 one sides can form the inversion-layer channel of connection n-type high-dopant concentration launch site 301 and n-type drift region 402.3rd electrode 103
When applying positive voltage, electronic current is transmitted to n-type drift region 402 from n-type high-dopant concentration launch site 301, and the electronic current
Hole as the ideal base drive current of PNP bipolar transistor, will be promoted from 306 implant n-type drift region 402 of p-type collecting zone, and then
Form the emitter current of PNP bipolar transistor, entire IGBT conductings, specifically such as the current distributions institute provided in structure chart
Equivalent circuit diagram and its current direction when showing, while giving traditional IGBT conductings are distributed, IE, IB, ICTransmitting is represented respectively
Electrode current, the ideal base drive current and the 3rd electrode current of hole injection that second electrode unlatching electronically forms.It is tellable
It is that when the current flows, the n-type drift region 402 of IGBT is operated in big injection state, this causes device to have under current state
There is relatively low conduction voltage drop.
And when second electrode 102 turns off the 3rd electrode 103 of holding application positive voltage simultaneously, p-type base 303 and n-type drift
It moves that the pn-junction that area 402 is formed is reverse-biased, enables the reverse biased junction compared with low doping concentration and compared with the n-type drift region 402 of scantling
It bears higher pressure-resistant.Therefore, IGBT also has preferable blocking performance.
In short, the inherently good forward and reverse blocking characteristics of IGBT structure so that it can be widely used in big work(
In rate field.But described in operation principle just described above, IGBT is as a kind of bipolarity charge carrier device, shutdown moment drift
Storage effect existing for moving area's minority carrier so that IGBT working frequencies are not high.Therefore, in practical applications, especially big
Power domain how while high voltage ability is kept, reduces the emphasis direction that device working loss is always people's research.
And turn-off power loss occupies very big proportion in the overall losses during IGBT works (especially in high-frequency circuit), and therefore, drop
The turn-off power loss of low IGBT has great significance for the production of people's real life.
The content of the invention
It is to be solved by this invention, aiming at above-mentioned traditional IGBT device turn-off power loss it is big the defects of, it is proposed that it is a kind of
Insulated gate bipolar transistor with low turn-off power loss.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of insulated gate bipolar transistor, including main IGBT areas, the main IGBT areas include stacking gradually from bottom to top
3rd electrode 103 of setting, the 3rd electrode base 306 of the second conductive type semiconductor, the cut-off of the first conductive type semiconductor field
Area 305, the first conductive type semiconductor drift region 402, the first conductive type semiconductor electric charge storage region 304, the second conductive-type
Type semiconductor first electrode base 303, the first conductive type semiconductor first electrode base 301 and first electrode 101, the master
IGBT areas further include the second conductive type semiconductor first electrode heavy doping contact zone 302 and second electrode 102, wherein second leads
Electric type semiconductor first electrode heavy doping contact zone 302 is set side by side with the first conductive type semiconductor first electrode base 301
It puts, 102 and first conductive type semiconductor first electrode base 301 of second electrode, the second conductive type semiconductor first electrode
303 and first conductive type semiconductor drift region 402 of base is isolated by the first insulating materials 201；It is it is characterized in that, described exhausted
Edge grid bipolar transistor further includes IGBT shunting zones, and IGBT shunting zones are connected with the one side that main IGBT areas have second electrode 102,
And using the connecting line in IGBT shunting zones and main IGBT areas as center line, IGBT shunting zones and the structure in main IGBT areas are symmetrical set,
Unlike main IGBT areas, in IGBT shunting zones drift region be the second conductive type semiconductor drift region 401, IGBT shunting zones
The second conductive type semiconductor first electrode heavy doping contact zone 302 and the first conduction type for being set up in parallel in main IGBT areas
Semiconductor first electrode base 301 and the second conductive type semiconductor first electrode heavy doping contact zone 302 are in symmetrical.
Further, in IGBT shunting zones and the junction in main IGBT areas, the 3rd electrode 103 has extended structure, described
3rd electrode extended structure is upwardly extended along device vertical direction, and the 3rd electrode extended structure passes through the second insulating materials 202
Isolate with surrounding semiconductor conductivity doped region.
Further, in the 3rd electrode base 306 in main IGBT areas, it is provided with and the 3rd electrode 103 and the 3rd electrode
The 3rd electrode district high-doped zone 307 of the first conductive type semiconductor of extended structure contact.
Further, the second electrode is separated structure, including at least a master second positioned at main IGBT areas one side
Electrode and a separation second electrode for being located at IGBT shunting zones one side.
Further, the 3rd electrode 103 has multiple extended structures, and the 3rd electrode extended structure is along device Vertical Square
To upwardly extending, and the 3rd electrode extended structure is isolated by the second insulating materials 202 with surrounding semiconductor conductivity doped region.
Further, the 3rd electrode extended structure extends upward through the second conductive type semiconductor along device vertical direction
3rd electrode base 306 is extended into the first conductive type semiconductor field cut-off region 305.
Further, the 3rd electrode extended structure sequentially passes through the second conduction type half upwards along device vertical direction
The 3rd electrode base 306 of conductor and the first conductive type semiconductor field cut-off region 305 extend into the drift of the first conductive type semiconductor
It moves in area 402.
Further, the IGBT structure unit that the main IGBT areas and IGBT shunting zones are formed connects successively in the horizontal direction
Bank cloth is extended and is integrated on same 3rd electrode 103, and in the main IGBT areas and IGBT shunting zones contact position to arrange successively
Portion shares second electrode structure, and lower part shares three-electrode structure.
Beneficial effects of the present invention are on the one hand the solution of the present invention can realize the shunting of different carriers, and respectively
The second class carrier, first kind carrier high density passage are respectively formed at first electrode and the 3rd electrode, so as to fulfill load
Shutdown moment carrier monopole circulates, and then improves turn-off speed；In addition, drift region is closed using the P/N knots being laterally arranged alternately
Drift region internal electric field transverse modulation under disconnected state, it is possible to have higher is positive/negative to blocking ability.
Description of the drawings
Fig. 1 is conventional IGBT structure and work schematic equivalent circuit；
Fig. 2 is the structure diagram of embodiment 1；
Fig. 3 be embodiment 1 conducting state under electronic current and hole current circulation path schematic diagram；
Fig. 4 is the schematic equivalent circuit of 1 off state moment of embodiment, wherein, (a) is IGBT shunting zones B and second
The schematic equivalent circuit of electrode structure work；(b) it is that the equivalent circuit that main IGBT areas A and three-electrode structure work is illustrated
Figure；
Fig. 5 is the comparison diagram of embodiment 1 and routine IGBT turn-off times；
Fig. 6 is embodiment 1 and the positive/negative comparison diagrams to blocking ability of routine IGBT；
Fig. 7 is a kind of structure diagram of embodiment 2；
Fig. 8 is second of structure diagram of embodiment 2；
Fig. 9 is the third structure diagram of embodiment 2；
Figure 10 is the 4th kind of structure diagram of embodiment 2；
Figure 11 is the 5th kind of structure diagram of embodiment 2；
Figure 12 is the 6th kind of structure diagram of embodiment 2；
Figure 13 is a kind of structure diagram of embodiment 3；
Figure 14 is a kind of structure diagram of embodiment 4；
Figure 15 is second of structure diagram of embodiment 4；
Figure 16 is the third structure diagram of embodiment 4；
Figure 17 is the 4th kind of structure diagram of embodiment 4；
Figure 18 is a kind of structure diagram of embodiment 5；
Figure 19 is second of structure diagram of embodiment 5；
Figure 20 is the third structure diagram of embodiment 5；
Figure 21 is the 4th kind of structure diagram of embodiment 5；
Figure 22 is the 5th kind of structure diagram of embodiment 5；
Figure 23 is the 6th kind of structure diagram of embodiment 5；
Figure 24 is a kind of structure diagram of embodiment 6；
Figure 25 is second of structure diagram of embodiment 6；
Figure 26 is the third structure diagram of embodiment 6；
Figure 27 is the 4th kind of structure diagram of embodiment 6；
Figure 28 is the 5th kind of structure diagram of embodiment 6；
Figure 29 is the 6th kind of structure diagram of embodiment 6.
Specific embodiment
With reference to the accompanying drawings and examples, detailed description of the present invention technical solution：
In following embodiment, for the first conductive type semiconductor specific to N-type semiconductor, the second conductive type semiconductor is specific
To P-type semiconductor, corresponding first kind carrier is specially electronics, and the second class carrier is specially hole, and first electrode has
Body is to emitter, and second electrode is specially grid, and the 3rd electrode is specially collector；
Embodiment 1：
As shown in Fig. 2, the igbt of this example, including contact with each other and the main IGBT areas A of left and right distribution and
IGBT shunting zones B；The IGBT shunting zones B includes the 3rd electrode 103 arranged successively from bottom to up, P-type semiconductor the 3rd
Electrode base 306, N-type semiconductor field cut-off region 305, P-type semiconductor drift region 401, N-type semiconductor electric charge storage region 304, N
Type semiconductor first electrode base 303, P-type semiconductor first electrode heavy doping contact zone 302 and first electrode 101；
Structure distribution is approximate at equal height on horizontal level with IGBT shunting zones B by the main IGBT areas A, with IGBT points
It flows unlike area B, main IGBT areas A lower parts in 306 region of P-type semiconductor are provided with the N-type half contacted with the 3rd electrode 103
The highly doped receiving area 307 of the 3rd electrode of conductor；It is different from IGBT shunting zones B in addition, main IGBT areas A drift region use N
Type semiconductor 402；It is different from IGBT shunting zones B in addition, the main IGBT areas A is provided with N-type first in 303 region internal upper parts
Electrode district 301；
The main IGBT areas A and IGBT shunting zones B contacts with each other and in contact interface on horizontal level at equal height
Upper end sets second electrode structure 102, and the second electrode 102 is deep into drift semiconductor area top end and passes through insulating materials
201 respectively with 301,303,304 and drift region separate；3rd electrode 103 is in inverted " t " type and extends up to N-type half
In conductor region 305, the 3rd electrode 103 upwardly extends part with it is separated in vertical direction respectively with 305,306,307
Insulating materials 202 forms the 3rd electrode extended structure；
The operation principle of this example is：
When device is opened, i.e. the 3rd electrode 103 applies positive high voltage, and first electrode 101 connects zero potential, second electrode
102 connect forward voltage.Inversion layer is formed in the first electrode base 303 near main IGBT areas A sides second electrode 102 at this time, into
And form high concentration electric electron current and be injected into drift region 402, the p-type of the electronic current and then the main IGBT areas A sides of driving is mixed
Miscellaneous 303, the 304 of n-type doping, 402,305 and p-type doping 306th area formed pnp bipolar junction transistor open, into
And the hole generated at the 3rd electrode 103 is injected into drift region 402, meanwhile, the high concentration electric electron current part is injected into
In the Electronic saving layer 304 of shunting zone B sides and field cutoff layer 305, p-type in the electronic current driving IGBT shunting zone B of the part
306th area, 305th area of N-type, 401st area of p-type and p-type 401,304th area of N-type, 302nd areas of PXing, two PNP pipes point of 303rd area parasitism
It does not open, and then forms very big Injection Current, stabling current situation is as shown in Figure 3；
And work as device shutdown moment, drift region 401 and 402 is poor due to the energy of position of own material so that hole flows to
401, electronics flows to 402, meanwhile, in the B areas of shunting zone, as shown in Fig. 4 (a), 302nd area, 303rd area, 304th area, 401st area, electrode
102 and insulating materials 201 forms drain electrode, grid is shorted to the PMOS of zero potential, when the 3rd electrode applies high voltage, the PMOS
Pipe is formed about hole high density passage in insulating materials, is conducive to the taking away when off in hole；Meanwhile in main IGBT areas
In A, as shown in Fig. 4 (b), 305th area, 306th area, 307th area, 402nd area and three-electrode structure form grid, leakage short circuit cause high level
NMOS, which is formed about electronics high-speed channel in the 3rd electrode, favorable electron taking away when off；It in short, should
Structure realizes the unipolarity flowing of device carrier when off, and then while optimizing tradition IGBT shut-off lacks sub- storage effect,
So as to improve the turn-off speed of device；Fig. 5 gives the comparison diagram of the present embodiment and routine IGBT turn-off times, hence it is evident that finds out,
Compared with conventional IGBT structure, the present embodiment has the shorter turn-off time；
When device complete switches off, when the 3rd electrode 103 applies high voltage, drift region 401 and 402 mutually exhausts, and stays
The fixed charge of lower opposite polarity and horizontal direction modulate drift region internal electric field, simultaneously because second electrode and the 3rd electrode
Drift region is deep into respectively, and so as to which device can keep higher voltage endurance capability in positive/negative direction, Fig. 6 gives conventional device
Part and the forward direction of the present embodiment and direction blocking characteristics contrast schematic diagram, hence it is evident that find out, compared to conventional IGBT structure, sheet
Embodiment also has higher reverse blocking capability.
Embodiment 2：
The embodiment is similar to Example 1 in structure, and the different second electrodes in the C areas in embodiment 2, which use, divides
It is a kind of mode of embodiment 2 as shown in Figure 7 from structure, separated second electrode includes main second electrode 102 and separation the
Two electrode 102a.Wherein, main second electrode 102 is located at main IGBT areas A one sides, and separates second electrode 102a and be located at IGBT shuntings
Area B one sides；Be worth one says be separate second electrode 102a can be connected with main second electrode 102, can also floating, can also
It is directly connected to first electrode 101.
The operation principle of the embodiment is same as Example 1, can realize the shunting of shut-off carrier, and improves shut-off speed
Degree.
Embodiment 2 can also use other separation second electrode structures, such as shown in Fig. 8 opposite in IGBT shunting zones
Main 102 one side of second electrode, which is set, functional identical with separating second electrode 102a another separates second electrode；And main the
Two electrodes 102, separation second electrode 102a is located at the another IGBT structure unit of main IGBT areas A both sides respectively, specifically such as Fig. 9 institutes
Show；And based on Fig. 8, other implementations that n separation second electrode 4- series is provided in the C regions of IGBT shunting zones of Fig. 9
Example (n>1), and between each two second electrode it is intended to be provided with first electrode 101, and these separation second electrodes can be with
Main second electrode 102 connects, can also floating, can also be directly connected to first electrode 101, specifically can as Figure 10,11 and
Shown in 12.
These embodiments of embodiment 2 are similar to 1 mechanism of embodiment at work, and separate the increasing of second electrode number
Add can increase hole to take passage away, further improve turn-off speed.
Embodiment 3：
As shown in figure 13, the structure of the embodiment is similar to Example 1, and difference is 2 drift region 401 of embodiment in transverse direction
Direction has extension into main IGBT areas A, and expansion replaces drift region 402.
And in specific works, drift region still can realize that electronic current opens the base stage of parasitic PNP, realize hole note
Enter and then have the generation of high current, therefore operation principle is same as Example 1, has higher turn-off speed.
Embodiment 4：
The embodiment is similar to 1 structure of embodiment, the difference is that embodiment 4 is the of IGBT structure cells D region
Three electrode extended structure tops are extended in field cut-off region 305, if Figure 14 is a kind of mode of embodiment 4.
During specific works, embodiment 4 is similar to Example 1, the difference is that the field cut-off region 305 in main IGBT areas A
It is connected with the field cut-off region in the B of shunting zone, contributes to shunting zone B one sides p-type 401, N-type 305, the PNP pipe that p-type 306 is formed is opened
It opens, so as to further improve the injection saturation performance of device.
In addition, to further improve the turn-off performance of device, based on 4 embodiment of embodiment, can also propose to use more
The mode of three-electrode structure embodiment 4, specifically can be such as Figure 15；The 3rd electrode base 306 and the 3rd in main IGBT areas A
Electrode metal 103 can be distinguished by the 307 of N-type, specific such as Figure 16.With the more second electrode structures of use described in embodiment 2
It is similar, using the present embodiment of multiple 3rd electrodes also due to carrier takes the increase of passage away and with higher shut-off
Speed.And during using embodiment structure as shown in figure 16, injection intensity can be greatly affected, to improve such situation,
The area in electronic receipt area 307 can be adjusted, it specifically can be such as Figure 17.
Embodiment 5：
The embodiment is in embodiment 1 and embodiment 2, embodiment 3, on the basis of the various modes of 4 structure of embodiment, implements
IGBT structure unit top C areas, middle part drift region, the various combinations in lower part D areas are further formed the other embodiments of IGBT,
Wherein Figure 18-Figure 23 is 5 therein six kinds of typical ways of embodiment, each be the above embodiments 1- embodiments 4 not
With the combination of mode.And the various modes of embodiment are also all based on working mechanism of the assembled unit with respective combination.Such as Figure 18
It is the combination of structure shown in Fig. 2 and Fig. 7；If Figure 19 is the combination of structure shown in Fig. 2 and Figure 10；Figure 20 is Fig. 2, Fig. 8 and Figure 14
The combination of shown structure；Figure 20 is the combination of structure shown in Fig. 2, Figure 10 and Figure 16；Figure 21 is shown in Fig. 2, Figure 11 and Figure 14
The combination of structure；Figure 22 is the combination of structure shown in Fig. 2, Figure 12 and Figure 15.
Embodiment 6：
The embodiment does IGBT structure based on the IGBT structure unit described in Examples 1 to 5 on the 3rd electrode 103 is shared
Unit transverse extends, and is connected between these expansion structure units by second electrode and the 3rd electrode, and junction is using separation
, it is necessary to ensure main second electrode in 301 one side of N-type launch site during second electrode structure, and separate second electrode and be located at p-type transmitting
302 one side of contact zone.The exemplary embodiment of some embodiments 6 can as shown in figures 24-29, and corresponding to operation principle is also
It is approximate with the operation principle of respective corresponding IGBT structure unit.
Wherein, Figure 24 is the extending transversely of structure shown in Fig. 2；Figure 25 is the extending transversely of structure shown in Figure 18；Figure 26 is
Structure is extending transversely as shown in figure 15；Figure 27 is the extending transversely of structure as shown in figure 19；Figure 28 is structure shown in Figure 22
It is extending transversely；Figure 29 is the extending transversely of structure shown in Figure 23.
Claims (8)
1. a kind of insulated gate bipolar transistor, including main IGBT areas, the main IGBT areas include stacking gradually from bottom to top setting
The 3rd electrode (103) put, the 3rd electrode base (306) of the second conductive type semiconductor, the first conductive type semiconductor field are cut
Only area (305), the first conductive type semiconductor drift region (402), the first conductive type semiconductor electric charge storage region (304),
Two conductive type semiconductor first electrode bases (303), the first conductive type semiconductor first electrode base (301) and the first electricity
Pole (101), the main IGBT areas further include the second conductive type semiconductor first electrode heavy doping contact zone (302) and the second electricity
Pole (102), wherein the second conductive type semiconductor first electrode heavy doping contact zone (302) and the first conductive type semiconductor the
One electrode base (301) is set up in parallel, second electrode (102) and the first conductive type semiconductor first electrode base (301), the
Two conductive type semiconductor first electrode bases (303) and the first conductive type semiconductor drift region (402) pass through the first insulation
Material (201) is isolated；It is characterized in that, the igbt further includes IGBT shunting zones, IGBT shunting zones and master
The one side that IGBT areas have second electrode (102) connects, and using the connecting line in IGBT shunting zones and main IGBT areas as center line, IGBT
The structure of shunting zone and main IGBT areas is symmetrical set, and unlike main IGBT areas, drift region is second in IGBT shunting zones
Conductive type semiconductor drift region (401), the second conductive type semiconductor first electrode heavy doping contact zone of IGBT shunting zones
(302) the first conductive type semiconductor first electrode base (301) and the second conduction type with being set up in parallel in main IGBT areas
Semiconductor first electrode heavy doping contact zone (302) is symmetric.
2. a kind of insulated gate bipolar transistor according to claim 1, which is characterized in that in IGBT shunting zones and master
The junction in IGBT areas, the 3rd electrode (103) have extended structure, the 3rd electrode extended structure along device vertical direction to
Upper extension, and the 3rd electrode extended structure is isolated by the second insulating materials (202) with surrounding semiconductor conductivity doped region.
A kind of 3. insulated gate bipolar transistor according to claim 2, which is characterized in that the 3rd electricity in main IGBT areas
In pole base (306), the first conductive type semiconductor contacted with the 3rd electrode (103) and the 3rd electrode extended structure is provided with
3rd electrode district high-doped zone (307).
4. a kind of insulated gate bipolar transistor according to claims 1 to 3 any one, which is characterized in that described
Two electrodes are separated structure, and the main second electrode for being located at main IGBT areas one side including at least one and one are located at IGBT shunting zones
The separation second electrode of one side.
5. a kind of insulated gate bipolar transistor according to claim 1, which is characterized in that the 3rd electrode (103) has
Multiple extended structures, the 3rd electrode extended structure is upwardly extended along device vertical direction, and the 3rd electrode extended structure leads to
The second insulating materials (202) is crossed with surrounding semiconductor conductivity doped region to isolate.
6. a kind of insulated gate bipolar transistor according to claim 2 or 5, which is characterized in that the 3rd electrode prolongs
Structure is stretched along device vertical direction to extend upward through the 3rd electrode base (306) of the second conductive type semiconductor to extend into first conductive
In type semiconductor field cut-off region (305).
7. a kind of insulated gate bipolar transistor according to claim 2 or 5, which is characterized in that the 3rd electrode prolongs
It stretches structure and sequentially passes through the 3rd electrode base (306) of the second conductive type semiconductor and the first conduction upwards along device vertical direction
Type semiconductor field cut-off region (305) is extended into the first conductive type semiconductor drift region (402).
8. a kind of insulated gate bipolar transistor according to claims 1 to 3 any one, which is characterized in that described
Contact arrangement is extended and is integrated in same the IGBT structure unit that main IGBT areas and IGBT shunting zones are formed successively in the horizontal direction
On 3rd electrode (103), and the main IGBT areas to arrange successively and IGBT shunting zones contact position top share second electrode structure, under
Portion shares three-electrode structure.
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| CN201711255213.9A CN108122962B (en) | 2017-12-04 | 2017-12-04 | Insulated gate bipolar transistor |
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| CN201711255213.9A CN108122962B (en) | 2017-12-04 | 2017-12-04 | Insulated gate bipolar transistor |
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Cited By (2)
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