CN108122962B - Insulated gate bipolar transistor - Google Patents

Insulated gate bipolar transistor Download PDF

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CN108122962B
CN108122962B CN201711255213.9A CN201711255213A CN108122962B CN 108122962 B CN108122962 B CN 108122962B CN 201711255213 A CN201711255213 A CN 201711255213A CN 108122962 B CN108122962 B CN 108122962B
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CN108122962A (en
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汪志刚
王冰
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Qianghua Times Chengdu Technology Co ltd
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Southwest Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices

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  • Insulated Gate Type Field-Effect Transistor (AREA)
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Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to an insulated gate bipolar transistor. On the basis of the structure of a traditional longitudinal IGBT device, the IGBT shunt area is arranged, and the third electrode extension structure and the third electrode area high-doping receiving area are arranged at the third electrode, so that on one hand, the shunt of different carriers can be realized, and second-type carriers and first-type carrier high-density channels are respectively formed at the first electrode and the third electrode, so that the unipolar circulation of the carriers at the moment of carrier turn-off is realized, and the turn-off speed is further improved; in addition, the drift region adopts P/N junctions which are transversely and alternately arranged, and the electric field in the drift region is transversely modulated in the off state, so that the drift region also has higher forward/reverse blocking capability.

Description

Insulated gate bipolar transistor
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an insulated gate bipolar transistor.
Background
Insulated Gate Bipolar Transistors (IGBTs), as an integrated technology, mix the operating mechanisms of MOSFET structures and bipolar junction transistors. As shown in fig. 1, a schematic diagram of a conventional IGBT device structure and a corresponding schematic diagram of an equivalent circuit are shown, in the conventional IGBT structure diagram, an IGBT includes a first electrode 101, a second electrode 102, a third electrode 103, a second electrode insulating layer 201, an n-type high doping concentration emitter region 301, a p-type high doping concentration emitter contact region 302, a p-type base region 303, an n-type drift region 402, an n-type field stop layer region 305, and a p-type collector region 306.
When the voltage of the second electrode 102 is higher than the threshold voltage of the device, an inversion layer channel connecting the n-type emitter region 301 with high doping concentration and the n-type drift region 402 is formed in the p-type emitter base region close to the second electrode 102. When a positive voltage is applied to the third electrode 103, an electron current is transmitted from the n-type emitter region 301 with high doping concentration to the n-type drift region 402, and the electron current is used as a base driving current of the PNP bipolar transistor to promote holes to be injected from the p-type collector region 306 to the n-type drift region 402, so as to form an emitter current of the PNP bipolar transistor, the whole IGBT is turned on, specifically, as shown by a current distribution given in the structural diagram, and an equivalent circuit diagram and a current flow direction distribution thereof when the conventional IGBT is turned on are given at the same time, IE，IB，ICThird electrode for respectively representing emitter current, base drive current formed by opening electron of second electrode and hole injectionThe current is applied. It is worth mentioning that when a current flows, the n-type drift region 402 of the IGBT operates in a large injection state, which results in a low turn-on voltage drop of the device under a large current condition.
When the second electrode 102 is turned off while the third electrode 103 is kept applied with a positive voltage, the pn junction formed by the p-type base region 303 and the n-type drift region 402 is reversely biased, and the lower doping concentration and the wider thickness of the n-type drift region 402 enable the reverse junction to withstand a higher withstand voltage. Therefore, the IGBT also has better blocking performance.
In summary, the IGBT structure inherently has good forward and reverse blocking characteristics, so that it can be widely applied in the field of high power. However, as the operating principle is described above, the IGBT as a bipolar carrier device has a low operating frequency due to the storage effect of the minority carriers in the turn-off transient drift region. Therefore, in practical applications, especially in the high power field, it is always the focus of research on how to reduce the operating loss of the device while maintaining high voltage endurance. The turn-off loss has a great proportion in the overall loss of the IGBT during operation (especially in a high-frequency circuit), so that the reduction of the turn-off loss of the IGBT is of great significance to the actual life and production of people.
Disclosure of Invention
The invention aims to solve the problem that the turn-off loss of the traditional IGBT device is large, and provides an insulated gate bipolar transistor with low turn-off loss.
In order to achieve the purpose, the invention adopts the following technical scheme:
an insulated gate bipolar transistor comprises a main IGBT area, wherein the main IGBT area comprises a third electrode 103, a second conductive type semiconductor third electrode base region 306, a first conductive type semiconductor field stop region 305, a first conductive type semiconductor drift region 402, a first conductive type semiconductor charge storage region 304, a second conductive type semiconductor first electrode base region 303, a first conductive type semiconductor first electrode base region 301 and a first electrode 101 which are sequentially stacked from bottom to top, the main IGBT region further includes a second conductivity type semiconductor first electrode heavily doped contact region 302 and a second electrode 102, the second conductive type semiconductor first electrode heavily doped contact region 302 and the first conductive type semiconductor first electrode base region 301 are arranged in parallel, and the second electrode 102 is isolated from the first conductive type semiconductor first electrode base region 301, the second conductive type semiconductor first electrode base region 303 and the first conductive type semiconductor drift region 402 through a first insulating material 201; the insulated gate bipolar transistor is characterized by further comprising an IGBT shunt area, wherein the IGBT shunt area is connected with one side, provided with the second electrode 102, of the main IGBT area, the connecting line of the IGBT shunt area and the main IGBT area is used as a central line, the structure of the IGBT shunt area and the structure of the main IGBT area are symmetrically arranged, the structure is different from that of the main IGBT area, a drift area in the IGBT shunt area is a second conductive type semiconductor drift area 401, and a second conductive type semiconductor first electrode heavily doped contact area 302 of the IGBT shunt area is symmetrical to a first conductive type semiconductor first electrode base area 301 and a second conductive type semiconductor first electrode heavily doped contact area 302 which are arranged in the main IGBT area in parallel.
Further, at the junction of the IGBT shunt region and the main IGBT region, the third electrode 103 has an extended structure that extends upward along the device vertical direction, and the third electrode extended structure is isolated from the surrounding semiconductor conductively doped region by the second insulating material 202.
Further, in the third electrode base region 306 of the main IGBT region, a first conductivity type semiconductor third electrode region highly doped region 307 is provided in contact with the third electrode 103 and the third electrode extension structure.
Furthermore, the second electrode is a separate structure and at least comprises a main second electrode positioned on one side of the main IGBT area and a separate second electrode positioned on one side of the IGBT shunt area.
Further, the third electrode 103 has a plurality of extension structures, the extension structures of the third electrode extend upwards along the vertical direction of the device, and the extension structures of the third electrode are isolated from the surrounding semiconductor conductive doping regions by the second insulating material 202.
Further, the third electrode extension structure extends upward through the second conductivity type semiconductor third electrode base region 306 in the device vertical direction into the first conductivity type semiconductor field stop region 305.
Further, the third electrode extension structure sequentially penetrates through the second conductivity type semiconductor third electrode base region 306 and the first conductivity type semiconductor field stop region 305 upward along the vertical direction of the device and extends into the first conductivity type semiconductor drift region 402.
Furthermore, the IGBT structure units formed by the main IGBT area and the IGBT shunt area are sequentially in contact arrangement and expansion along the horizontal direction and are integrated on the same third electrode 103, and the upper parts of the contact positions of the main IGBT area and the IGBT shunt area which are sequentially arranged share the second electrode structure, and the lower parts share the third electrode structure.
The invention has the beneficial effects that on one hand, the scheme of the invention can realize the shunting of different current carriers, and respectively form a second type of current carrier and a first type of current carrier high-density channel at the first electrode and the third electrode, thereby realizing the unipolar circulation of the current carriers at the moment of load cut-off and further improving the cut-off speed; in addition, the drift region adopts P/N junctions which are transversely and alternately arranged, and the electric field in the drift region is transversely modulated in the off state, so that the drift region also has higher forward/reverse blocking capability.
Drawings
FIG. 1 is a schematic diagram of a conventional IGBT structure and an equivalent circuit for operation;
FIG. 2 is a schematic structural view of embodiment 1;
FIG. 3 is a schematic view of the on-state electron current and hole current flow paths in example 1;
fig. 4 is a schematic diagram of an equivalent circuit at the moment of the turn-off state in embodiment 1, wherein (a) is a schematic diagram of an equivalent circuit of the IGBT shunt region B and the second electrode structure; (b) is an equivalent circuit schematic diagram of the main IGBT area A and the third electrode structure;
fig. 5 is a graph comparing the turn-off time of example 1 with that of a conventional IGBT;
fig. 6 is a graph comparing the forward/reverse blocking capabilities of example 1 with conventional IGBTs;
FIG. 7 is a schematic view of the constitution of example 2;
FIG. 8 is a second constitutional view of embodiment 2;
FIG. 9 is a third constitutional view of embodiment 2;
FIG. 10 is a fourth constitutional view of embodiment 2;
FIG. 11 is a schematic view of a fifth construction of embodiment 2;
FIG. 12 is a sixth construction view of embodiment 2;
FIG. 13 is a schematic view of the constitution of example 3;
FIG. 14 is a schematic view of the constitution of example 4;
FIG. 15 is a second constitutional view of embodiment 4;
FIG. 16 is a third constitutional view of embodiment 4;
FIG. 17 is a fourth constitutional view of example 4;
FIG. 18 is a schematic structural view of example 5;
FIG. 19 is a second constitutional view of embodiment 5;
FIG. 20 is a third constitutional view of embodiment 5;
FIG. 21 is a fourth constitutional view of embodiment 5;
FIG. 22 is a schematic view of a fifth construction of embodiment 5;
FIG. 23 is a sixth construction view of example 5;
FIG. 24 is a schematic view of the constitution of example 6;
FIG. 25 is a second constitutional view of embodiment 6;
FIG. 26 is a third constitutional view of embodiment 6;
FIG. 27 is a fourth constitutional view of embodiment 6;
FIG. 28 is a fifth constitutional view of embodiment 6;
FIG. 29 is a sixth configuration diagram of embodiment 6.
Detailed Description
The technical scheme of the invention is described in detail in the following with reference to the accompanying drawings and embodiments:
in the following embodiments, the first conductivity type semiconductor is embodied as an N-type semiconductor, the second conductivity type semiconductor is embodied as a P-type semiconductor, the corresponding first type carrier is embodied as an electron, the second type carrier is embodied as a hole, the first electrode is embodied as an emitter, the second electrode is embodied as a gate, and the third electrode is embodied as a collector;
example 1:
as shown in fig. 2, the insulated gate bipolar transistor of this example includes a main IGBT region a and an IGBT shunt region B that are in contact with each other and distributed left and right; the IGBT shunting regions B respectively comprise a third electrode 103, a P-type semiconductor third electrode base region 306, an N-type semiconductor field stop region 305, a P-type semiconductor drift region 401, an N-type semiconductor charge storage region 304, an N-type semiconductor first electrode base region 303, a P-type semiconductor first electrode heavily doped contact region 302 and a first electrode 101 which are sequentially arranged from bottom to top;
the main IGBT area A and the IGBT shunt area B are similar in structural distribution at the same height on the horizontal position, and different from the IGBT shunt area B, the lower part of the main IGBT area A in the P-type semiconductor 306 area is provided with an N-type semiconductor third electrode highly-doped receiving area 307 which is in contact with the third electrode 103; different from the IGBT shunt area B, the main IGBT area A adopts an N-type semiconductor 402 in the drift area; different from the IGBT shunt area B, the upper part of the main IGBT area A in the area 303 is provided with an N-type first electrode area 301;
the main IGBT area A and the IGBT shunt area B are mutually contacted at the same height on the horizontal position, a second electrode structure 102 is arranged at the upper end of a contact interface, and the second electrode 102 extends deep to the top end of the semiconductor drift area and is respectively separated from 301, 303 and 304 and the drift area through an insulating material 201; the third electrode 103 is inverted "T" shaped and extends upward into the N-type semiconductor region 305, the upward extending portion of the third electrode 103 and the insulating material 202 separating it in a vertical direction from the N- type semiconductor region 305, 306, 307, respectively, form a third electrode extension;
the working principle of the embodiment is as follows:
when the device is turned on, i.e. the third electrode 103 applies a high forward voltage, the first electrode 101 is connected to zero potential and the second electrode 102 is connected to the forward voltage. At this time, an inversion layer is formed in the first electrode base region 303 near the second electrode 102 on the side of the main IGBT region a, so that a high-concentration electron current is formed and injected into the drift region 402, the electron current further drives the P-type doped region 303 on the side of the main IGBT region a, the PNP bipolar junction transistor formed by the N-type doped regions 304, 402, 305 and the P-type doped region 306 is turned on, further holes generated at the third electrode 103 are injected into the drift region 402, meanwhile, a part of the high-concentration electron current is injected into the electron storage layer 304 and the field stop layer 305 on the side of the shunt region B, and the part of the electron current drives the P-type 306 region, the N-type 305 region, the P-type 401 region, the N-type 304 region, the P-type 302 region and the P-type 303 parasitic two PNP transistors in the shunt region B of the IGBT to be turned on respectively, so that a large injection current is formed, and;
at the moment of turning off the device, holes flow to the drift regions 401 and 402 and electrons flow to the drift regions 402 due to the potential difference of the materials of the drift regions 401 and 402, and meanwhile, in the shunt region B, as shown in fig. 4(a), the drain and the gate of the PMOS transistor are shorted to zero potential by the regions 302, 303, 304 and 401, the electrode 102 and the insulating material 201, and when a high voltage is applied to the third electrode, the PMOS transistor forms a high-density channel of holes near the insulating material, which is beneficial to the extraction of the holes during the turning off; meanwhile, in the main IGBT area a, as shown in fig. 4(b), the area 305, the area 306, the area 307, the area 402, and the third electrode structure form an NMOS with a high level due to gate-drain short, and the NMOS forms an electron high-speed channel near the third electrode, which is favorable for pumping electrons away when the gate is turned off; in a word, the structure realizes unipolar flow of current carriers when the device is turned off, so that minority carrier storage effect when the traditional IGBT is turned off is optimized, and the turn-off speed of the device is improved; fig. 5 is a comparison graph of the turn-off time of the present embodiment with that of the conventional IGBT, and it is apparent that the present embodiment has a shorter turn-off time with respect to the conventional IGBT structure;
when the device is completely turned off, and when a high withstand voltage is applied to the third electrode 103, the drift regions 401 and 402 are mutually depleted, fixed charges with opposite polarities are left, and an electric field in the drift region is modulated in the transverse direction, meanwhile, the second electrode and the third electrode respectively penetrate into the drift region, so that the device can keep higher withstand voltage capability in the forward/reverse directions, fig. 6 shows a comparison schematic diagram of the forward and directional blocking characteristics of the conventional device and the present embodiment, and it is obvious that the present embodiment has higher reverse blocking capability compared with the conventional IGBT structure.
Example 2:
this embodiment is similar in structure to embodiment 1, except that the second electrode in region C in embodiment 2 is in a separate structure, and as shown in fig. 7, which is a manner of embodiment 2, the separate second electrode includes a main second electrode 102 and a separate second electrode 102 a. The main second electrode 102 is located on one side of the main IGBT area a, and the separation second electrode 102a is located on one side of the IGBT shunt area B; it should be noted that the separated second electrode 102a may be connected to the main second electrode 102, may be floating, or may be directly connected to the first electrode 101.
The working principle of the embodiment is the same as that of the embodiment 1, and the shunting of the carrier can be turned off, so that the turn-off speed is improved.
Embodiment 2 may also adopt other split second electrode structures, such as another split second electrode having the same function as the split second electrode 102a is provided on the IGBT shunt region side with respect to the main second electrode 102 as shown in fig. 8; and a main second electrode 102 separating further IGBT structural units of which second electrodes 102a are respectively located at both sides of the main IGBT region a, as shown in fig. 9 in particular; and in the other embodiment (n >1) of fig. 9, in which n separate second electrodes 4-series are provided in the IGBT shunt area C, based on fig. 8, and a first electrode 101 is provided between every two second electrodes, and these separate second electrodes may be connected to the main second electrode 102, may also be floating, or may be directly connected to the first electrode 101, as shown in fig. 10, 11 and 12.
These embodiments of example 2 operate in a similar mechanism to example 1, and increasing the number of separate second electrodes increases the pumping path of the holes, further increasing the turn-off speed.
Example 3:
as shown in fig. 13, the structure of this embodiment is similar to that of embodiment 1, except that in embodiment 2, the drift region 401 has an extension in the lateral direction into the main IGBT region a, and the extension part replaces the drift region 402.
During specific work, the drift region can still realize the opening of the base electrode of the parasitic PNP by the electron current, and realize the injection of the hole and the generation of large current, so the working principle is the same as that of the embodiment 1, and the high turn-off speed is realized.
Example 4:
this embodiment is similar in structure to embodiment 1, except that embodiment 4 extends into the field stop region 305 at the top of the third electrode extension structure of the IGBT structural unit D region, as shown in fig. 14, which is a manner of embodiment 4.
In specific operation, the embodiment 4 is similar to the embodiment 1, except that the field stop region 305 in the main IGBT region a is communicated with the field stop region in the shunt region B, which is helpful for opening the PNP transistors formed by the P-type 401, the N-type 305, and the P-type 306 on the side of the shunt region B, thereby further improving the injection saturation performance of the device.
In addition, in order to further improve the turn-off performance of the device, based on the embodiment of example 4, a mode of using a plurality of third electrode structures in example 4 may also be proposed, and specifically, fig. 15 may be shown; the third electrode base region 306 and the third electrode metal 103 in the main IGBT region a can be separated by an N-type 307 region, as shown in fig. 16 in particular. Similar to the structure using the plurality of second electrodes described in example 2, the present embodiment using the plurality of third electrodes also has a higher turn-off speed due to an increase in the carrier pumping channel. In the structure shown in fig. 16, the injection strength is greatly affected, and to improve this, the area of the electron-receiving region 307 can be adjusted, as shown in fig. 17.
Example 5:
this embodiment is based on the structure of various modes of embodiment 1, embodiment 2, embodiment 3 and embodiment 4, and various combinations of the upper C region, the middle drift region and the lower D region of the IGBT structural unit are implemented to further form other embodiments of the IGBT, wherein fig. 18 to 23 are six typical modes of embodiment 5, and each mode is a combination of different modes of embodiment 1 to embodiment 4. The various modes of embodiment are also based on the working mechanism that the combination units have corresponding combinations. FIG. 18 is a combination of the structures shown in FIGS. 2 and 7; FIG. 19 is a combination of the structures shown in FIGS. 2 and 10; FIG. 20 is a combination of the structures shown in FIGS. 2, 8 and 14; FIG. 20 is a combination of the structures shown in FIGS. 2, 10 and 16; FIG. 21 is a combination of the structures shown in FIGS. 2, 11 and 14; fig. 22 is a combination of the structures shown in fig. 2, 12, and 15.
Example 6:
in this embodiment, the IGBT structure unit according to embodiments 1 to 5 is laterally expanded on the common third electrode 103, the expanded structure units are connected by the second electrode and the third electrode, and when the separated second electrode structure is adopted at the connection point, it is necessary to ensure that the main second electrode is located on the N-type emitter region 301 side, and the separated second electrode is located on the P-type emitter contact region 302 side. Typical implementations of some of the embodiments 6 can be as shown in fig. 24-29, and the corresponding operating principles are also similar to the operating principles of the respective corresponding IGBT structural units.
Wherein FIG. 24 is a lateral expansion of the structure shown in FIG. 2; FIG. 25 is a lateral expansion of the structure shown in FIG. 18; FIG. 26 is a lateral expansion of the structure shown in FIG. 15; FIG. 27 is a lateral expansion of the structure shown in FIG. 19; FIG. 28 is a lateral expansion of the structure shown in FIG. 22; fig. 29 is a lateral expansion of the structure shown in fig. 23.

Claims (6)

1. The insulated gate bipolar transistor comprises a main IGBT area, wherein the main IGBT area comprises a third electrode (103), a second conductive type semiconductor third electrode base region (306), a first conductive type semiconductor field cut-off region (305), a first conductive type semiconductor drift region (402), a first conductive type semiconductor charge storage region (304), a second conductive type semiconductor first electrode base region (303), a first conductive type semiconductor first electrode base region (301) and a first electrode (101) which are sequentially stacked from bottom to top, the main IGBT area further comprises a second conductive type semiconductor first electrode heavily doped contact region (302) and a second electrode (102), the second conductive type semiconductor first electrode heavily doped contact region (302) and the first conductive type semiconductor first electrode base region (301) are arranged in parallel, and the second electrode (102) and the first conductive type semiconductor first electrode base region (301) are arranged in parallel, The second conductivity type semiconductor first electrode base region (303) and the first conductivity type semiconductor drift region (402) are isolated by a first insulating material (201); the insulated gate bipolar transistor is characterized by further comprising an IGBT shunt area, wherein the IGBT shunt area is connected with one side, provided with a second electrode (102), of the main IGBT area, the connecting line of the IGBT shunt area and the main IGBT area is used as a central line, the structure of the IGBT shunt area and the structure of the main IGBT area are symmetrically arranged, the structure is different from that of the main IGBT area, a drift area in the IGBT shunt area is a second conductive type semiconductor drift area (401), and a second conductive type semiconductor first electrode heavily doped contact area (302) of the IGBT shunt area is symmetrical to a first conductive type semiconductor first electrode base area (301) and a second conductive type semiconductor first electrode heavily doped contact area (302) which are arranged in parallel in the main IGBT area;
at the junction of the IGBT shunt area and the main IGBT area, a third electrode (103) is provided with an extension structure, the extension structure of the third electrode extends upwards along the vertical direction of the device, and the extension structure of the third electrode is isolated from the peripheral semiconductor conductive doping area through a second insulating material (202);
in the third electrode base region (306) of the main IGBT region, a first conductivity type semiconductor third electrode region highly doped region (307) is provided in contact with the third electrode (103) and the second insulating material (202).
2. The IGBT of claim 1, wherein the second electrode is a split structure comprising at least a main second electrode on a side of the main IGBT region and a split second electrode on a side of the IGBT shunt region.
3. An igbt according to claim 1, characterized in that the third electrode (103) has a plurality of extension structures, which extend upwards in the vertical direction of the device, and which are isolated from the surrounding conductively doped semiconductor region by the second insulating material (202).
4. An insulated gate bipolar transistor according to claim 1 or 3, characterized in that said third electrode extension structure extends in the vertical direction of the device up through the second conductivity type semiconductor third electrode base region (306) into the first conductivity type semiconductor field stop region (305).
5. An igbt according to claim 1 or 3, characterized in that the third electrode extension structure extends in the vertical direction of the device through the second conductivity type semiconductor third electrode base region (306) and the first conductivity type semiconductor field stop region (305) in turn upwards into the first conductivity type semiconductor drift region (402).
6. The insulated gate bipolar transistor according to claim 1, wherein the IGBT structure units formed by the main IGBT region and the IGBT shunt region are sequentially arranged in contact with each other in the horizontal direction, expanded and integrated on the same third electrode (103), and the upper portion of the contact portion between the sequentially arranged main IGBT region and the IGBT shunt region shares the second electrode structure, and the lower portion shares the third electrode structure.
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CN114203810A (en) * 2021-12-10 2022-03-18 电子科技大学 Increase back grid and reduce super high voltage IGBT structure of turn-off loss
CN116110961A (en) * 2023-02-22 2023-05-12 强华时代(成都)科技有限公司 Trench gate bipolar transistor and manufacturing process thereof

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