CN105590960A - Superspeed heavy current LIGBT - Google Patents
Superspeed heavy current LIGBT Download PDFInfo
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- CN105590960A CN105590960A CN201510998522.XA CN201510998522A CN105590960A CN 105590960 A CN105590960 A CN 105590960A CN 201510998522 A CN201510998522 A CN 201510998522A CN 105590960 A CN105590960 A CN 105590960A
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- 230000005684 electric field Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005728 strengthening Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 27
- 230000003139 buffering effect Effects 0.000 description 23
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 206010019133 Hangover Diseases 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000002787 reinforcement Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 108091006149 Electron carriers Proteins 0.000 description 4
- QVGXLLKOCUKJST-NJFSPNSNSA-N oxygen-18 atom Chemical compound [18O] QVGXLLKOCUKJST-NJFSPNSNSA-N 0.000 description 4
- 230000007774 longterm Effects 0.000 description 3
- 238000005381 potential energy Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 101100379081 Emericella variicolor andC gene Proteins 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
Abstract
Provided is a superspeed heavy current LIGBT, relating to the semiconductor power device. The superspeed heavy current LIGBT comprises a silicon substrate, and a drift region, a channel region, an ohmic contact heavily doped region, a cathode, a grid medium, an anode leading-out wire, a grid, a cathode leading-out wire and an anode which are all arranged above the silicon substrate and buried oxide. The drift region is provided with an electric field strengthening unit on the upper surface of the portion between the anode and the channel region; and the electric field strengthening unit is used for generating an electric field pointing to the lower surface of the electric field strengthening unit from the anode, and is isolated from the drift region through an insulating medium. The superspeed heavy current LIGBT improves the conduction performance and switching performance of an LIGBT device.
Description
Technical field
The present invention relates to semiconductor power device, particularly material and the structure of Shuangzi conduction power device.
Background technology
As everyone knows, traditional horizontal Shuangzi power device is that a large amount of holes and electronics by utilizing large injection effect to introduce conducts electricity. for example most typical landscape insulation bar double-pole-type transistor device (LIGBT), owing to having used Shuangzi conduction, so its conducting resistance is little, conduction voltage drop is much smaller than the MOS type device (MOS) under equal conditions. although MOS device uses many electronic conductions, cause conducting resistance larger, its switching speed is very rapid, but because LIGBT has utilized Shuangzi conduction, in the time that closing, power device can there is a large amount of nonequilibrium carriers in drift region, they cannot be neutralized within the short time, and this causes LIGBT device after turn off process, to have a long-term anode hangover electric current. people have carried out a large amount of work and have optimized this anode hangover electric current, for example classical anode in short circuit LIGBT[P.A.Gough, M.R.Simpson, andV.Rumenik, " Fastswitchinglateralinsulatedgatetransistor, " inIEDMTech.Dig., 1986, pp.218 – 221], Schottky injects SINFET[J.K.O.Sin, C.A.T.Salama, L.Z.Hou, " TheSINFET ?ASchottkyinjectionMOS ?gateddevice, " IEEETrans.ElectronDevices, vol.ED ?33, 1940, 1986], SiGe anode LIGBT[P.Li, Y.Q.Li, andC.A.T.Salama, " Aheterojunctionbipolartransistorwithathin α ?Siemitter, " IEEETrans.ElectronDevices, vol.41, no.6, pp.932 – 935, Jun.1994], etc.. traditional solution is all the large injection effect by weakening anode mostly, or reduce the concentration in hole by shortening carrier lifetime, make in the time that device is closed from being conducting to, nonequilibrium carrier is corresponding reduction also, thereby shortens the duration of LIGBT hangover electric current. but these schemes are owing to having reduced the concentration of holoe carrier, the current density when causing break-over of device reduces, and the conduction loss of device is increased. in addition, such scheme can only reduce the nonequilibrium carrier concentration of LIGBT in the time closing and cannot thoroughly eliminate, so the hangover electric current of LIGBT can only be weakened, cannot be eliminated.
Summary of the invention
Technical problem to be solved by this invention is, the large electric current landscape insulation bar double-pole-type transistor of a kind of ultrahigh speed device is provided, and can the carrier concentration when increasing substantially LIGBT conducting improves the conducting current density of device.
Second technical problem to be solved by this invention is can significantly improve switching speed and can thoroughly eliminate anode hangover electric current.
The technical scheme that the present invention solve the technical problem employing is, the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed, comprise silicon substrate 1 and be arranged at silicon substrate 1 and bury drift region 2, channel region 3, Ohmic contact heavily doped region 4, negative electrode 5, gate dielectric 8, anode lead wire 10, grid 11, cathode terminal 12, the anode 13 of oxygen 18 tops
The upper surface of the part of drift region 2 between anode 13 and channel region 3, is provided with electric field and strengthens unit 20, and described electric field is strengthened unit 20 for generation of an electric field that points to electric field and strengthen unit 20 lower surfaces from anode 13;
Electric field is strengthened unit 20 and is isolated by dielectric 6 and drift region 2.
Described electric field unit 20 comprises:
High resistant conduction region 7,
Be connected with high resistant conduction region 7, and in high resistant conduction region 7 the accelerating grid electrode heavily doped region 15 near a side of anode 13,
Be connected with high resistant conduction region 7, and in high resistant conduction region 7 the ground connection doped region 16 near channel region 3 one sides,
The accelerating grid electrode 9 being connected with accelerating grid electrode heavily doped region 15,
The earth electrode 17 being connected with ground connection doped region 16.
The material of described accelerating grid electrode heavily doped region 15 is N+ shaped material, and the material of ground connection doped region 16 is P-type material.
Described accelerating grid electrode heavily doped region 15 the upper surface of drift region 2 projection in the plane and anode 13 drift region 2 upper surfaces projection in the plane overlap.
Ground connection doped region 16 the upper surface of drift region 2 projection in the plane and channel region 3 drift region 2 upper surfaces projection in the plane overlap.
Described electric field is strengthened unit 20 and is embedded in dielectric 6, and electric field is strengthened unit 20 and transistorized other part isolation by dielectric 6.
The method that when all mistakes of simultaneous interpretation of the present invention weaken LIGBT conducting, carrier concentration improves closing velocity fails to agree, the present invention will utilize peripheral electric field, carrier concentration when increasing substantially LIGBT conducting is thoroughly eliminated anode hangover electric current and is significantly improved switching speed, so the present invention will realize the dual raising of LIGBT break-over of device performance and switch performance.
Brief description of the drawings
Fig. 1 is the sectional view of device in embodiment 1.
Fig. 2 is the sectional view of device in embodiment 2.
Fig. 3 is the sectional view of device in embodiment 3.
Fig. 4 is the sectional view of device in embodiment 4.
Fig. 5 is the sectional view of device in embodiment 5.
Fig. 6 is the sectional view of device in embodiment 6.
Fig. 7 is the sectional view of device in embodiment 7.
Fig. 8 is device accelerating grid electrode heavily doped region 15 and the overlapping schematic diagram of anode 13 projection in Fig. 1.
Fig. 9 is device ground connection doped region 16 and the overlapping schematic diagram of channel region 3 projection in Fig. 1.
Detailed description of the invention
The invention provides the large electric current landscape insulation bar double-pole-type transistor of a kind of ultrahigh speed, comprise silicon substrate 1 and be arranged at silicon substrate 1 and the drift region 2 of burying oxygen 18 tops, channel region 3, Ohmic contact heavily doped region 4, negative electrode 5, gate dielectric 8, anode lead wire 10, grid 11, cathode terminal 12, anode 13, the upper surface of the part of drift region 2 between anode 13 and channel region 3, be provided with electric field and strengthen unit 20, described electric field is strengthened unit 20 for generation of an electric field that points to electric field and strengthen unit 20 lower surfaces from anode 13, when work, this electric field is received from grid 11 at transistor device and the process that cut-off signals turn-offs completely to device, is produced the effect of eliminating hangover electric current, in the time of transistor device conducting, the effect that reduces conduction loss will be produced.
Electric field is strengthened unit 20 and is isolated by dielectric 6 and drift region 2.
More specifically, the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed of the present invention device comprises substrate 1, drift region 2, anode 13, channel region 3, Ohmic contact heavily doped region 4, negative electrode 5, grid 11, gate dielectric 8, anode lead wire 10, cathode terminal 12, buffering area 14, drift region 2, buries oxygen 18, buffering area 14, negative electrode 5 for N-type; Substrate 1, channel region 3, Ohmic contact heavily doped region 4, anode 13 are P type; Arrange that electric field strengthens that unit 20 is covered in drift region 2, buffering area 14 surperficial partly or entirely, also may extend to anode 13 or channel region 3.
Electric field is strengthened unit 20 by other part isolation of dielectric 6 and transistor, and electric field is strengthened unit 20 and comprised high resistant conduction region 7, accelerating grid electrode heavily doped region 15, ground connection doped region 16, accelerating grid electrode 9, earth electrode 17. Accelerating grid electrode heavily doped region 15 is located at the part of high resistant conduction region 7 near anode lead wire 10, accelerating grid electrode 9 directly contacts with accelerating grid electrode heavily doped region 15, ground connection doped region 16 is positioned at the part of high resistant conduction region 7 near grid 11, earth electrode 17 directly contacts with ground connection doped region 16, and ground connection doped region 16 and accelerating grid electrode heavily doped region 15 are isolated with grid 11 and anode lead wire 10 respectively. Accelerating grid electrode heavily doped region 15 near the edge of anode and anode 13 drift region 2 upper surfaces projection in the plane tangent or partly overlap, ground connection doped region 16 drift region 2 upper surfaces projection in the plane and channel region 3 partly overlap or tangent. The material of dielectric 6 can be used traditional gate dielectric material, also can use high dielectric constant material, the material of high resistant conduction region 7 can be used light dope monocrystalline silicon or polysilicon, its doping type can be N-type or P type, accelerating grid electrode heavily doped region 15 uses N-type or P type heavy doping monocrystalline or polysilicon, and ground connection doped region 16 is the middle and high concentration doping of N-type or P type.
Embodiment is as follows more specifically:
As Fig. 1,2,3, shown in 4, comprise substrate 1, drift region 2, bury oxygen 18, anode 13, channel region 3, Ohmic contact heavily doped region 4, negative electrode 5, grid 11, gate dielectric 8, anode lead wire 10, cathode terminal 12, buffering area 14, drift region 2, buffering area 14, negative electrode 5 are N-type; Substrate 1, channel region 3, Ohmic contact heavily doped region 4, anode 13 are P type; In drift region 2, buffering area 14 surfaces be provided with electric field strengthen unit 20 also may extend to anode 13 or channel region 3. Electric field is strengthened unit 20 by other part isolation of dielectric 6 and transistor, and electric field is strengthened unit 20 and comprised high resistant conduction region 7, accelerating grid electrode heavily doped region 15, ground connection doped region 16, accelerating grid electrode 9, earth electrode 17. Accelerating grid electrode heavily doped region 15 is located at the part of high resistant conduction region 7 near anode lead wire 10, accelerating grid electrode 9 directly contacts with accelerating grid electrode heavily doped region 15, ground connection doped region 16 is positioned at the part of high resistant conduction region 7 near grid 11, earth electrode 17 directly contacts with ground connection doped region 16, and ground connection doped region 16 and accelerating grid electrode heavily doped region 15 are isolated with grid 11 and anode lead wire 10 respectively. Accelerating grid electrode heavily doped region 15 near the edge of anode and anode 13 drift region 2 upper surfaces projection in the plane tangent or partly overlap, ground connection doped region 16 drift region 2 upper surfaces projection and channel region 3 in the plane overlapping or tangent.
The typical case of this device applies as shown in Figure 1, this application is used silicon as substrate 1, high resistant conduction region 7 be doped to N-type light dope, accelerating grid electrode heavily doped region 15 be doped to N-type heavy doping, ground connection doped region 16 is the doping of P type intermediate concentration, high resistant conduction region 7, accelerating grid electrode heavily doped region 15, the material of ground connection doped region 16 is polysilicon. When device is during in cut-off state, anode 13 voltages are high, and grid 11, negative electrode 5 voltages are low, now need to will speed up grid 9 and are set to the high voltage level same anode 13, by earth electrode 17 ground connection. Now electric field is strengthened the accelerating grid electrode heavily doped region 15 of 20 inside, unit, high resistant withstand voltage zone 7, and ground connection doped region 16 will form a reverse-biased PiN diode, and high resistant withstand voltage zone 7 is depleted, and electric current will can not flow to earth electrode 17 from accelerating grid electrode 9. The same with the withstand voltage mechanism of traditional LIGBT, now device of the present invention is also in cut-off blocking state. And if use high-k is as dielectric 6, adjust effect due to the electric field of high dielectric constant material, make device drift region of the present invention potential energy distribution more even, so its withstand voltage more traditional punch LIGBT can also increase.
When grid 11 is while being high, the conducting channel that connects drift region 2 and negative electrode 5 will form at channel region 3, and device will enter conducting state, and with conventional power, LIGBT is the same, to there is the large injection effect in drift region in device of the present invention, so conduction mode is electron hole Shuangzi conduction. during break-over of device of the present invention, need accelerating grid electrode 9 and earth electrode 17 to be set to earth potential or negative potential, now ground connection doped region 16, high resistant conduction region 7, and accelerating grid electrode heavily doped region 15 is earth potential or negative potential, electric field is strengthened unit 20 and will be played a role, 2 one of the inner introducing of now electric field reinforcement 20Jiang drift region, unit start from anode 13, through drift region 2 and buffering area 14, and dielectric 6, end at ground connection doped region 16, high resistant conduction region 7, the electric field of accelerating grid electrode heavily doped region 15, this electric field will make more holoe carrier under electric field force effect, move to the surface of drift region 2 from anode 13, and because electric field reinforcement unit 20 is covered in drift region 2, the surface of buffering area 14 may extend to anode 13 or channel region 3 parts drift region 2 upper surfaces projection in the plane overlapping, so except the large injection from anode originally, strengthen at this electric field under the effect of unit 20, the hole on whole drift region 2 and buffering area 14 surfaces is increased substantially, large injection effect is significantly strengthened, electronic carrier concentration is corresponding being improved also, current density is also enhanced. make the On current of device of the present invention will be apparently higher than traditional LIGBT device. in the P+ of the large injection effect dependence anode 13 of tradition LIGBT, hole is to the natural diffusion motion of N ?drift region 2, the present invention is on the basis of diffusion naturally, add electric field strengthen unit 20 make from anode 13 be diffused into N ?hole density in drift region 2 significantly increase.
In the time that device of the present invention transfers cut-off to by conducting, grid 11 is first by high step-down, but accelerating grid electrode 9 is still low, now the conducting channel of channel region 3 disappears, with regard to traditional LIGBT, owing to there is nonequilibrium electron carrier in drift region, cause anode to occur long-term hangover electric current. and in device of the present invention, due to the existence of electric field reinforcement unit 20, and now the voltage of accelerating grid electrode 9 is still low, the nonequilibrium electron carrier in drift region make the hole concentration in drift region 2 remain height, so will be neutralized by a large amount of holoe carriers in drift region 2 rapidly within a very short time. then the anode voltage when voltage that will speed up grid 9 by peripheral drive circuit is immediately brought up to rapidly device cut-off, owing to there is a parasitic capacitance in accelerating grid electrode 9 and anode lead wire 10, and accelerating grid electrode heavily doped region 15 near the edge of anode and anode 13 drift region 2 upper surfaces projection in the plane tangent or partly overlap, so the rapid lifting of voltage will be coupled on anode lead wire 10 by parasitic capacitance on accelerating grid electrode 9, thereby the voltage that makes anode lead wire 10 is followed the tracks of the voltage of accelerating grid electrode 9 completely and is made device by quick closedown, thoroughly solve traditional LIGBT device and turn-off slow problem.
Be below embodiment more specifically.
Embodiment 1:
Referring to Fig. 1, Fig. 8, Fig. 9. The present embodiment use P ?as substrate (1), use N ?as drift region (1), P+ is as anode (13), N is as buffering area (14), P is as channel region (3), N+ is as negative electrode (5), and P+ is as Ohmic contact heavily doped region (4). Electric field is strengthened unit 20 and is arranged at drift region 2, buffering area 14 surfaces, wherein N ?or P ?polysilicon as high resistant conduction region (7), N+ polysilicon is as accelerating grid electrode heavily doped region (15), accelerating grid electrode (9) directly contacts with accelerating grid electrode heavily doped region (15), and ground connection doped region (16) is the doping of P type intermediate concentration.
When device is during in cut-off state, anode 13 voltages are high, and grid 11, negative electrode 5 voltages are low, now need to will speed up grid 9 and are set to the high voltage level same anode 13, by earth electrode 17 ground connection. Accelerating grid electrode heavily doped region 15, high resistant withstand voltage zone 7, ground connection doped region 16 will form a reverse-biased PiN diode, and high resistant withstand voltage zone 7 is depleted, and electric current will can not flow to earth electrode 17 from accelerating grid electrode 9. The same with the withstand voltage mechanism of traditional LIGBT, now device of the present invention is also in cut-off blocking state. And if use high-k is as dielectric 6, adjust effect due to the electric field of high dielectric constant material, make device drift region of the present invention potential energy distribution more even, so its withstand voltage more traditional punch LIGBT can also increase.
When grid 11 is while being high, the conducting channel that connects drift region 2 and negative electrode 5 will form at channel region 3, and device will enter conducting state, and with conventional power, LIGBT is the same, to there is the large injection effect in drift region in device of the present invention, so conduction mode is electron hole Shuangzi conduction. during break-over of device of the present invention, need accelerating grid electrode 9 and earth electrode 17 to be set to earth potential, now due to ground connection doped region 16, high resistant conduction region 7, the current potential of accelerating grid electrode heavily doped region 15 is lower than the voltage of anode 13, and because electric field reinforcement unit 20 is covered in drift region 2, the surface of buffering area 14, may extend to anode 13 or channel region 3 parts drift region 2 upper surfaces projection in the plane overlapping, so will start from anode 13 one of the inner introducing in drift region 2, through drift region 2 and buffering area 14, end at ground connection doped region 16, high resistant conduction region 7, the electric field of accelerating grid electrode heavily doped region 15, this electric field will make more holoe carrier be moved to the surface of drift region 2 in electric field force effect from anode 13, so except the large injection from anode originally, strengthen at electric field under the effect of unit 20, its drift region hole is increased substantially, large injection effect is significantly strengthened, electronic carrier concentration is corresponding being improved also, current density is also enhanced. make the conduction loss of device of the present invention will be starkly lower than traditional LIGBT device.
In the time that device of the present invention transfers cut-off to by conducting, grid 11 is first by high step-down, but accelerating grid electrode 9 is still low, now the conducting channel of channel region 3 disappears, with regard to traditional LIGBT, owing to there is nonequilibrium electron carrier in drift region, cause anode to occur long-term hangover electric current. and in device of the present invention, due to the existence of electric field reinforcement unit 20, and now the voltage of accelerating grid electrode 9 is still low, the nonequilibrium electron carrier in drift region make the hole concentration in drift region 2 remain height, so will be neutralized by a large amount of holoe carriers in drift region 2 rapidly within a very short time. then the anode voltage when voltage that will speed up grid 9 by peripheral drive circuit is immediately brought up to rapidly device cut-off, owing to there is a parasitic capacitance in accelerating grid electrode 9 and anode lead wire 10, and accelerating grid electrode heavily doped region 15 near the edge of anode and anode 13 drift region 2 upper surfaces projection in the plane tangent or partly overlap, so the rapid lifting of voltage will be coupled on anode lead wire 10 by parasitic capacitance on accelerating grid electrode 9, thereby the voltage that makes anode lead wire 10 is followed the tracks of the voltage of accelerating grid electrode 9 completely and is made device by quick closedown, earth electrode 17 is no matter under break-over of device or cut-off state, all be always ground level.
Embodiment 2:
Referring to Fig. 2. The present embodiment use P ?as substrate (1), use N ?as drift region (1), P+ is as anode (13), N is as buffering area (14), P is as channel region (3), N+ is as negative electrode (5), and P+ is as Ohmic contact heavily doped region (4). Electric field is strengthened unit 20 and is arranged at drift region 2, buffering area 14 surfaces, wherein lightly doped N ?or P ?polysilicon as high resistant conduction region (7), accelerating grid electrode heavily doped region (15) uses respectively with ground connection doped region (16) heavy doping and the middle DOPOS doped polycrystalline silicon that same high resistant conduction region (7) doping type is identical, and accelerating grid electrode (9) and earth electrode (17) are arranged at respectively the both sides of high resistant conduction region (7) near grid (11) and anode (10).
When device is during in cut-off state, accelerating grid electrode (9) is set to the high potential same anode (10), a small amount of electric current will flow to earth electrode (17) by high resistant conduction region (7) from grid (9), now high resistant conduction region (7) will form a resistive field plate, drift region potential energy is uniformly distributed, thereby reduces the dependence of the dielectric constant to dielectric (6). In the present embodiment, utilize equally electric field to strengthen unit 20 and coordinate peripheral driver to carry out boost device performance, it is in full accord with embodiment 1 that break-over of device and conducting transfer the mechanism effect of cut-off to. The present embodiment due to use be high resistant conduction region (7), in accelerating grid electrode heavily doped region (15) and ground connection doped region (16), use doping type of the same race, if with embodiment 1 uses identical type of drive, although can there is the problem of electric leakage in the time that device ends, technique is more simple compared with embodiment 1. On the other hand, also can avoid leakage current by the type of drive that changes accelerating grid electrode (9), in the time of break-over of device, accelerating grid electrode (9) voltage is low, in the time that device is closed from being conducting to, accelerating grid electrode (9) driving voltage will be uprised by low, once still device is closed completely, accelerating grid electrode (9) becomes high-impedance state. In this way, when device cut-off, will not have leakage current, but increase peripheral drive circuit complexity.
Embodiment 3:
Referring to Fig. 3. The present embodiment use P ?as substrate (1), use N ?as drift region (1), P+ is as anode (13), N is as buffering area (14), P is as channel region (3), N+ is as negative electrode (5), and P+ is as Ohmic contact heavily doped region (4). Electric field is strengthened unit 20 and is arranged at drift region 2, buffering area 14 surfaces, lightly doped N ?or P ?monocrystalline silicon as high resistant conduction region (7), accelerating grid electrode heavily doped region (15) is with the identical heavy doping monocrystalline silicon of high resistant conduction region (7) doping type, and accelerating grid electrode (9) is arranged at the side of high resistant conduction region (7) near anode (10).
The present embodiment is owing to having used light dope monocrystalline silicon as high resistant conduction region (7), so without adding ground connection doped region (16) and earth electrode (17), in the time that device ends, will speed up grid (9) and be set to the high level that anode (10) is the same, also can produce and exhaust at high resistant conduction region (7), so drift region potential lines can be uniformly distributed, thereby ensure device withstand voltage. In the present embodiment, utilize equally electric field to strengthen unit 20 and coordinate peripheral driver to carry out boost device performance, it is in full accord with embodiment 1 that break-over of device and conducting transfer the mechanism effect of cut-off to. In the time of break-over of device, the current potential of accelerating grid electrode (9) is low, and the current potential of whole high resistant conduction region (7) is also low, and electric field is strengthened unit 20 and will be played a role, and a large amount of holoe carriers is introduced in drift region 2. Become when cut-off at device from conducting, it is upper that the voltage on accelerating grid electrode (9) will be coupled to anode lead wire (10), thereby realize the quick closedown of device. In the time of break-over of device, the present embodiment allows accelerating grid electrode (9) to connect negative pressure, and the effect that makes electric field strengthen unit 20 is further promoted, thereby introduces more holoe carrier in drift region 2, and bring thus more electronic carrier, current density is further improved.
The present embodiment is owing to having used light dope monocrystalline silicon as high resistant conduction region (7), so need to prepare monocrystalline silicon on medium (6), this has certain technology difficulty. But the present embodiment is compared with embodiment 1, reduce by an electrode, simplify device, in addition in the time of break-over of device, can allow can not cause electric leakage at accelerating grid electrode (9) upper use negative voltage, thereby the large injection effect of device is further strengthened, and the current density can make break-over of device time is further improved. The present embodiment is compared and is not leaked electricity with embodiment 2.
Embodiment 4:
Referring to Fig. 4. In the various embodiments described above, if used material that dielectric constant is lower as medium (6), the parasitic capacitance between accelerating grid electrode (9) and anode lead wire (10) is less, and anode lead wire while causing device to be closed (10) is weakened to the follow-up capability of the upper voltage of accelerating grid electrode (9). The present embodiment can be under the prerequisite of the various embodiments described above, an additional electric capacity (19) between accelerating grid electrode (9) anode (10), thus make up the deficiency of parasitic capacitance. Electric capacity (19) can be discrete capacitor device, can be also the integrated capacitance being integrated on same chips.
Embodiment 5:
Referring to Fig. 5. The present embodiment use P ?as substrate (1), use N ?as drift region (1), P+ is as anode (13), N is as buffering area (14), P is as channel region (3), N+ is as negative electrode (5), and P+ is as Ohmic contact heavily doped region (4). Electric field is strengthened unit 20 and is arranged at drift region 2, buffering area 14 surfaces, and electric field is strengthened unit 20 and comprised high resistant conduction region 7, accelerating grid electrode heavily doped region 15, ground connection doped region 16, earth electrode 17. High resistant conduction region 7, accelerating grid electrode heavily doped region 15, and the material of ground connection doped region 16 can be monocrystalline silicon, can be also polysilicon. High resistant conduction region 7, accelerating grid electrode heavily doped region 15, and the doping type of ground connection doped region 16 can be P type, can be also N-type, its doping content can be identical, also can be different. Ground connection doped region 16 is isolated with grid 11, and accelerating grid electrode heavily doped region 15 directly contacts with anode lead wire (10).
Electric field in the present embodiment is strengthened unit 20 owing to not using accelerating electrode 9, its closing property and traditional LIGBT are more or less the same, but due to the existence of earth electrode 17, in the time of break-over of device, electric field reinforcement unit 20 is low near the current potential of grid 11 parts, can introduce equally an electric field of strengthening unit 20 from anode 13 to electric field, so can improve the concentration of holoe carrier, thereby add powerful injection effect, make break-over of device current density by significantly lifting. Although this embodiment does not improve device closing property, only have three electrodes, can use the drive circuit of traditional LIGBT to drive, but compare with traditional LIGBT, can realize the significantly lifting of conducting current density.
Embodiment 6:
Referring to Fig. 6. The present embodiment use P ?as substrate (1), use N ?as drift region (1), P+ is as anode (13), N is as buffering area (14), P is as channel region (3), N+ is as negative electrode (5), and P+ is as Ohmic contact heavily doped region (4). Electric field is strengthened unit 20 and is arranged at drift region 2, buffering area 14 surfaces, and electric field is strengthened unit 20 and comprised high resistant conduction region 7 and ground connection doped region 16. High resistant conduction region 7, and the material of ground connection doped region 16 can be monocrystalline silicon, can be also polysilicon. The doping type of high resistant conduction region 7 and ground connection doped region 16 can be P type, can be also N-type, and its doping content can be identical, also can be different. Ground connection doped region 16 directly contacts with grid 11, high resistant conduction region 7 and anode lead wire (10) isolation.
Electric field in the present embodiment is strengthened unit 20 owing to not using accelerating electrode 9, its closing property and traditional LIGBT are more or less the same, but in the time of break-over of device, the high potential of grid 11 will be delivered on high resistant conduction region 7 by ground connection doped region 16, thereby produce one and start from high resistant conduction region 7, end at the electric field of channel region 3. Thereby although can not increasing hole as the various embodiments described above, this electric field adds powerful injection effect, but can on the surface of drift region 2, attract a large amount of electronic carriers, thereby there is build-up effect, realize equally the significantly lifting of break-over of device current density. Although this embodiment does not improve device closing property, only have three electrodes, can use the drive circuit of traditional LIGBT to drive, but compare with traditional LIGBT, can realize the significantly lifting of conducting current density. This embodiment effect is similar with embodiment 3, but the mechanism of utilizing is build-up effect, but not injects greatly reinfocing effect.
Embodiment 7:
Referring to Fig. 7. The present embodiment use P ?as substrate (1), use N ?as drift region (1), P+ is as anode (13), N is as buffering area (14), P is as channel region (3), N+ is as negative electrode (5), and P+ is as Ohmic contact heavily doped region (4). Electric field is strengthened unit 20 and is arranged at drift region 2, buffering area 14 surfaces, and electric field is strengthened unit 20 and only comprised high resistant conduction region 7. The doping type of high resistant conduction region 7 can be P type, can be also N-type. High resistant conduction region 7 is isolated with grid 11 and anode lead wire 10.
Electric field in the present embodiment is strengthened unit 20 owing to not using accelerating electrode 9, and its closing property and traditional LIGBT are more or less the same. The present embodiment high resistant conduction region 7 completely unsettled, so in the time of break-over of device, the current potential on high resistant conduction region 7 may be high, may be also low. If the current potential on high resistant conduction region 7 is high, can in drift region 2, introduce a large amount of electronic carriers because of build-up effect, low if, can introduce a large amount of holoe carriers to drift region 2 because of the large reinfocing effect that injects. In a word, use electric field to strengthen unit 20, regardless of its current potential, can improve carrier concentration by the inner electric field of introducing in drift region 2, thus the significantly lifting of current density while realizing its conducting. Although this embodiment does not improve device closing property, only have three electrodes, can use the drive circuit of traditional LIGBT to drive, but compare with traditional LIGBT, can realize the significantly lifting of conducting current density. Compare with other embodiment, this embodiment technique is simple simultaneously.
Claims (6)
1. the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed, comprise silicon substrate (1) andBe arranged at silicon substrate (1) and bury oxygen (18) top drift region (2), channel region (3),Ohmic contact heavily doped region (4), negative electrode (5), gate dielectric (8), anode lead wire (10),Grid (11), cathode terminal (12), anode (13), is characterized in that,
The upper surface of the part of drift region (2) between anode (13) and channel region (3),Be provided with electric field and strengthen unit (20), described electric field is strengthened unit (20) for generation of oneStrengthen the electric field of unit lower surface from anode directed electric field;
Electric field is strengthened unit (20) by dielectric (6) and drift region (2) isolation.
2. the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed as claimed in claim 1,It is characterized in that, described electric field unit (20) comprising:
High resistant conduction region (7),
Be connected with high resistant conduction region (7), and in the close anode (13) of high resistant conduction region (7)The accelerating grid electrode heavily doped region (15) of a side,
Be connected with high resistant conduction region (7), and in the close channel region (3) of high resistant conduction region (7)The ground connection doped region (16) of one side,
The accelerating grid electrode (9) being connected with accelerating grid electrode heavily doped region (15),
The earth electrode (17) being connected with ground connection doped region (16).
3. the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed as claimed in claim 2,It is characterized in that, the material of described accelerating grid electrode heavily doped region (15) is N+ shaped material, connectsThe material of ground doped region (16) is P-type material.
4. the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed as claimed in claim 2,It is characterized in that, described accelerating grid electrode heavily doped region (15) is the upper surface of (2) in drift regionProjection in the plane and anode (13) in drift region (2) upper surface in the planeProjection has coincidence or tangent.
5. the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed as claimed in claim 2,It is characterized in that, ground connection doped region (16) in drift region (2) upper surface institute in the planeProjection and channel region (3) in drift region (2) upper surface projection in the plane overlapOr tangent.
6. the large electric current landscape insulation bar double-pole-type transistor of ultrahigh speed as claimed in claim 1,It is characterized in that, described electric field is strengthened unit (20) and is embedded in dielectric (6), insulationElectric field is strengthened unit (20) and transistorized other part isolation by medium (6).
Priority Applications (3)
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| CN201510998522.XA CN105590960B (en) | 2015-12-28 | 2015-12-28 | Landscape insulation bar double-pole-type transistor |
| PCT/CN2016/111089 WO2017114235A1 (en) | 2015-12-28 | 2016-12-20 | Lateral insulated gate bipolar transistor and method for eliminating transistor tail current |
| US16/021,046 US10446673B2 (en) | 2015-12-28 | 2018-06-28 | Lateral insulated gate bipolar transistor and method of eliminating the transistor tail current |
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| CN107403843A (en) * | 2017-07-22 | 2017-11-28 | 长沙方星腾电子科技有限公司 | A kind of diode |
| CN107680996A (en) * | 2017-09-14 | 2018-02-09 | 电子科技大学 | Lateral power |
| CN110277443A (en) * | 2019-06-28 | 2019-09-24 | 电子科技大学 | Trench gate IGBT device with PNP break-through triode |
| CN110277444A (en) * | 2019-06-28 | 2019-09-24 | 电子科技大学 | Trench gate IGBT device with SCR structure |
| CN110620147A (en) * | 2018-09-14 | 2019-12-27 | 电子科技大学 | Ultra-high-speed high-current longitudinal insulated gate bipolar transistor |
| CN113013239A (en) * | 2021-03-08 | 2021-06-22 | 电子科技大学 | Novel source electrode Schottky contact IGBT structure |
| CN113270476A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Lateral insulated gate bipolar transistor with electronic control gate region and Schottky anode and manufacturing method thereof |
| CN113270477A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Accumulation field effect transistor for reducing main body electric field and manufacturing method thereof |
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| CN110277443A (en) * | 2019-06-28 | 2019-09-24 | 电子科技大学 | Trench gate IGBT device with PNP break-through triode |
| CN110277444A (en) * | 2019-06-28 | 2019-09-24 | 电子科技大学 | Trench gate IGBT device with SCR structure |
| CN110277443B (en) * | 2019-06-28 | 2021-02-12 | 电子科技大学 | Trench gate IGBT device with PNP punch-through triode |
| CN113013239A (en) * | 2021-03-08 | 2021-06-22 | 电子科技大学 | Novel source electrode Schottky contact IGBT structure |
| CN113270476A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Lateral insulated gate bipolar transistor with electronic control gate region and Schottky anode and manufacturing method thereof |
| CN113270477A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Accumulation field effect transistor for reducing main body electric field and manufacturing method thereof |
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