CN108122959A - 多晶硅高阻的制作方法 - Google Patents
多晶硅高阻的制作方法 Download PDFInfo
- Publication number
- CN108122959A CN108122959A CN201711429247.5A CN201711429247A CN108122959A CN 108122959 A CN108122959 A CN 108122959A CN 201711429247 A CN201711429247 A CN 201711429247A CN 108122959 A CN108122959 A CN 108122959A
- Authority
- CN
- China
- Prior art keywords
- polysilicon
- layer
- ohmic
- region
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 243
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 238
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 43
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 30
- 230000000903 blocking effect Effects 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 10
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- AFCIMSXHQSIHQW-UHFFFAOYSA-N [O].[P] Chemical compound [O].[P] AFCIMSXHQSIHQW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711429247.5A CN108122959B (zh) | 2017-12-25 | 2017-12-25 | 多晶硅高阻的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711429247.5A CN108122959B (zh) | 2017-12-25 | 2017-12-25 | 多晶硅高阻的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108122959A true CN108122959A (zh) | 2018-06-05 |
CN108122959B CN108122959B (zh) | 2020-08-21 |
Family
ID=62231716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711429247.5A Active CN108122959B (zh) | 2017-12-25 | 2017-12-25 | 多晶硅高阻的制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108122959B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6340833B1 (en) * | 1998-09-14 | 2002-01-22 | Taiwan Semiconductor Manufacturing Company | Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusion |
CN1855528A (zh) * | 2005-04-27 | 2006-11-01 | 上海华虹Nec电子有限公司 | 多晶硅-绝缘层-多晶硅电容和高阻多晶硅器件及制作方法 |
CN1964019A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 高压集成电路中制作高阻值多晶硅电阻的方法 |
CN106816433A (zh) * | 2015-12-01 | 2017-06-09 | 无锡华润上华半导体有限公司 | 一种多晶硅高阻的制造方法 |
-
2017
- 2017-12-25 CN CN201711429247.5A patent/CN108122959B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6340833B1 (en) * | 1998-09-14 | 2002-01-22 | Taiwan Semiconductor Manufacturing Company | Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusion |
CN1855528A (zh) * | 2005-04-27 | 2006-11-01 | 上海华虹Nec电子有限公司 | 多晶硅-绝缘层-多晶硅电容和高阻多晶硅器件及制作方法 |
CN1964019A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 高压集成电路中制作高阻值多晶硅电阻的方法 |
CN106816433A (zh) * | 2015-12-01 | 2017-06-09 | 无锡华润上华半导体有限公司 | 一种多晶硅高阻的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108122959B (zh) | 2020-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200727 Address after: 318050 Licun, Luqiao, Taizhou, Zhejiang Province, 38 Applicant after: Li Youhong Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community Junfeng Industrial Zone A3 building the first floor Applicant before: SHENZHEN JINGTE SMART MANUFACTURING TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 318020 Wang Xi Road, Dongcheng Street, Huangyan District, Taizhou, Zhejiang, 41 Patentee after: Li Youhong Address before: 318050 Licun, Luqiao, Taizhou, Zhejiang Province, 38 Patentee before: Li Youhong |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231017 Address after: 418000 Jiangkou Industrial Park, Industrial Concentration Zone, Xupu County, Huaihua City, Hunan Province Patentee after: Hunan Xiangyao Technology Co.,Ltd. Address before: 318020 Wang Xi Road, Dongcheng Street, Huangyan District, Taizhou, Zhejiang, 41 Patentee before: Li Youhong |