CN102064094B - 大厚度氧化层场板结构及其制造方法 - Google Patents
大厚度氧化层场板结构及其制造方法 Download PDFInfo
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- CN102064094B CN102064094B CN2010105500814A CN201010550081A CN102064094B CN 102064094 B CN102064094 B CN 102064094B CN 2010105500814 A CN2010105500814 A CN 2010105500814A CN 201010550081 A CN201010550081 A CN 201010550081A CN 102064094 B CN102064094 B CN 102064094B
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- Prior art keywords
- field plate
- big thickness
- silicon substrate
- microns
- oxide layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 24
- 230000003647 oxidation Effects 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 35
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims description 6
- 238000007521 mechanical polishing technique Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000280 densification Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000005336 cracking Methods 0.000 abstract description 5
- 238000005498 polishing Methods 0.000 abstract description 5
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 230000009194 climbing Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010105500814A CN102064094B (zh) | 2010-11-10 | 2010-11-10 | 大厚度氧化层场板结构及其制造方法 |
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CN2010105500814A CN102064094B (zh) | 2010-11-10 | 2010-11-10 | 大厚度氧化层场板结构及其制造方法 |
Publications (2)
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CN102064094A CN102064094A (zh) | 2011-05-18 |
CN102064094B true CN102064094B (zh) | 2012-07-18 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214569A (zh) * | 2011-05-27 | 2011-10-12 | 上海宏力半导体制造有限公司 | 阶梯状氧化层场板的制作方法 |
CN103903971B (zh) * | 2014-03-20 | 2017-01-04 | 上海华力微电子有限公司 | 一种提高栅氧化层质量的方法 |
CN112349768B (zh) * | 2020-09-23 | 2023-03-31 | 龙腾半导体股份有限公司 | 场限环-沟槽负斜角复合终端结构的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1265285A2 (en) * | 2001-06-04 | 2002-12-11 | Matsushita Electric Industrial Co., Ltd. | High - voltage semiconductor device |
CN101030601A (zh) * | 2007-04-10 | 2007-09-05 | 韩小亮 | 高压mosfet器件 |
CN101221986A (zh) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | 具有栅极场板的薄膜soi厚栅氧功率器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127720A (en) * | 1997-05-19 | 2000-10-03 | Matsushita Electronics Corporation | Semiconductor device and method for manufacturing the same |
JP5011611B2 (ja) * | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
-
2010
- 2010-11-10 CN CN2010105500814A patent/CN102064094B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1265285A2 (en) * | 2001-06-04 | 2002-12-11 | Matsushita Electric Industrial Co., Ltd. | High - voltage semiconductor device |
CN101030601A (zh) * | 2007-04-10 | 2007-09-05 | 韩小亮 | 高压mosfet器件 |
CN101221986A (zh) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | 具有栅极场板的薄膜soi厚栅氧功率器件 |
Non-Patent Citations (2)
Title |
---|
JP特开2000-77517A 2000.03.14 |
JP特开2002-368215A 2002.12.20 |
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Publication number | Publication date |
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CN102064094A (zh) | 2011-05-18 |
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Address after: Jiaxing City, Zhejiang province 314050 Nanhu District Branch Road No. 988 (Jiaxing city) Applicant after: STARPOWER SEMICONDUCTOR Ltd. Address before: Jiaxing City, Zhejiang province 314000 Ring Road No. 18 Sidalu Applicant before: Jiaxing Starpower Semiconductor Co.,Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: JIAXING STARPOWER SEMICONDUCTOR LTD. TO: JIAXING STARPOWER SEMICONDUCTOR SHARES LTD. |
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Denomination of invention: Large thickness oxidation layer field plate structure and manufacturing method thereof Effective date of registration: 20151209 Granted publication date: 20120718 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
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Date of cancellation: 20161212 Granted publication date: 20120718 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Large thickness oxidation layer field plate structure and manufacturing method thereof Effective date of registration: 20161216 Granted publication date: 20120718 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Date of cancellation: 20180904 Granted publication date: 20120718 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 314050 No. 988 Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province (Jiaxing Science and Technology City) Patentee after: Star Semiconductor Co.,Ltd. Address before: 314050 No. 988 Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province (Jiaxing Science and Technology City) Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
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