CN105514214B - 具有低暗电流的针扎光电二极管 - Google Patents

具有低暗电流的针扎光电二极管 Download PDF

Info

Publication number
CN105514214B
CN105514214B CN201510618059.1A CN201510618059A CN105514214B CN 105514214 B CN105514214 B CN 105514214B CN 201510618059 A CN201510618059 A CN 201510618059A CN 105514214 B CN105514214 B CN 105514214B
Authority
CN
China
Prior art keywords
conduction type
transition region
layer
heavy doping
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510618059.1A
Other languages
English (en)
Other versions
CN105514214A (zh
Inventor
L·法韦内克
D·迪塔特
F·鲁瓦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics France SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Priority to CN201810344158.9A priority Critical patent/CN108649042A/zh
Publication of CN105514214A publication Critical patent/CN105514214A/zh
Application granted granted Critical
Publication of CN105514214B publication Critical patent/CN105514214B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1463Pixel isolation structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689MOS based technologies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

本公开涉及具有低暗电流的针扎光电二极管。一种制造针扎光电二极管的方法,包括:在第二导电类型的衬底上形成将光子转换成电荷的第一导电类型的区域;用第二导电类型的重掺杂绝缘体层涂覆所述区域;和退火以确保从重掺杂绝缘体层的掺杂剂扩散。

Description

具有低暗电流的针扎光电二极管
技术领域
本公开涉及能够形成阵列图像传感器的像素的具有低暗电流的针扎光电二极管。
背景技术
附图1对应于美国专利号6,677,656的图2。该图是光电二极管的和相关联的转移晶体管(transfer transistor)的组件的单片实施例的部分简化截面图。这些元件被形成在形成于半导体衬底1上的外延层3的相同有源区中。有源区由例如氧化硅(SiO2)制成的场绝缘区2界定。外延层3被轻P型掺杂。衬底1也是P型的但被更重地掺杂。很可能设置有横向间隔件的绝缘栅极结构4形成在层3的表面之上。N型源极区域和漏极区域5和6在阱3的表面处位于栅极4的两任一侧上。栅极4右侧的漏极区域6被重掺杂(N+)。源极区域5形成在比漏极区域6大得多的表面区域中并且形成了光子被转换成电荷所在的有用区域。栅极4和漏极6与金属化层(未示出)为一体。该结构用重掺杂P型区域8和9(P+)完成。毗邻绝缘区2的区域8和9经由阱3和衬底1被连接至参考电压或接地。
光电二极管在其源极区域5的表面处进一步包括与区域8横向接触的P型层7。因此它被永久维持处于参考电压电平。光子被转换成电荷所在的有用区域、源极区域5是电浮动的。这样的光电二极管被称作“针扎二极管(pinned photodiode)”。
图2示出掺杂剂原子浓度的在垂直于层7、5、9和3的主平面的方向x上的分布。在示出的情况中,外延层3是例如在从5x1014at./cm3至3x1015at./cm3的范围内的恒定掺杂。N型区域5通过注入得到并且具有在从1016at./cm3至8x1017at./cm3的范围内的最大浓度。层7通过注入得到。不可避免地,如果用于形成层7的注入剂量较高,则区域7与5之间的结深度较大。已经示出了结深度等于在从30nm至50nm的范围内的xj1时在从1至2x1018at./cm3的范围内的第一最大浓度c1的情况,和具有在从5x1018at./cm3至5x1019at./cm3的范围内的最大浓度且具有等于在从100nm至250nm的范围内的xj2的结深度的第二注入的情况。
如果期望正确地吸收光子并且特别是对应于蓝色的光子,则层7应该尽可能薄。事实上,在蓝色中(对于450nm波长),基本上50%的光子在第一170nm中被吸收。层7的厚度因此应该比该值小得多。作为结果,其最大浓度并且特别是其表面浓度不大于1018at./cm3。在实际实施中,在形成了图1的结构之后,用绝缘体层、当前是氧化硅涂覆所述结构。现在,已知的是,在掺杂区域与氧化硅之间的界面处,将发生温度激活的电子空穴对的产生,其中的一些将进入N型层内。因此,即使不存在照明,区域N也会带电。这对应于所谓的暗电流。期望该暗电流尽可能地低。
发明内容
因此,实施例提供了一种制造针扎光电二极管的方法,包括:在第二导电类型的衬底上形成将光子转换成电荷的第一导电类型的转换区域;用第二导电类型的重掺杂绝缘体层涂覆所述转换区域;和退火以提供从重掺杂绝缘体层的掺杂剂扩散。
根据实施例,转换区域是N型的并且重掺杂绝缘体层是掺杂硼的氧化硅、BSG(硼硅玻璃)。
根据实施例,掺杂硼的氧化硅层掺杂有从5x1021至2x1022at./cm3的硼浓度。
根据实施例,退火是在如下条件下进行:使得在第二导电类型的重掺杂绝缘体层下面的半导体区域中的掺杂剂的渗透深度小于50nm,并且优选小于10nm。
根据实施例,在用重掺杂绝缘体层涂覆之前,以在从1017at./cm3至1018at./cm3的范围内的最大掺杂水平用第二导电类型的注入层涂覆转换区域。
实施例提供了一种针扎光电二极管,使其上部半导体层涂覆有重掺杂绝缘体层。
根据实施例,将光子转换成电荷的区域是N型的并且重掺杂绝缘体层是处于从5x1021at./cm3至2x1022at./cm3的硼浓度的掺杂硼的氧化硅、BSG。
将结合附图在具体实施例的以下非限制性描述中详细地描述前述及其他特征和优点。
附图说明
图1是对应于美国专利号6,677,656的图2的简化截面图;
图2示出根据针对图1中的类型的结构的深度的浓度变化;
图3是示出具有低暗电流的针扎光电二极管的第二实施例的截面图;和
图4示出根据针对图3中的类型的结构的深度的浓度变化。
像集成电路的表示中常见的一样,各个截面图未按比例绘制。此外,在以下描述中,除非另有说明,否则术语“近似”、“在…的数量级上”等意味着“到10%内”,并且诸如“上”、“下”、“横向”、“水平”、“竖直”等的关于方向的术语应用于如在相应的截面图中图示出的器件,可以理解的是在实践中器件可以具有不同的方向。
具体实施方式
图3是示出了具有低暗电流的针扎光电二极管的实施例的截面图。该光电二极管在重掺杂P型的衬底11上包括也是P型掺杂的优选通过外延形成的层12,该层12内形成了N型掺杂的阱13,阱13具有通过注入在其中形成的浅P型区域14、也就是深度小于100nm、优选小于75nm的区域。像先前一样,转移MOS晶体管15被形成并且包括形成其源极的区域13、形成其漏极的重掺杂N型区域16和栅极18。像素、特别是包括了光电二极管12、13、14和晶体管的像素通过深沟槽20、优选一直延伸至衬底11的深沟槽20界定。该深沟槽与重掺杂P型区域21、优选地通过从被包含在绝缘体填充沟槽20中的重掺杂材料扩散而形成的重掺杂P型区域21毗邻。
该结构被用重掺杂绝缘体层22涂覆。该绝缘体将例如在先前指示的导电类型的情况中是硼硅酸盐玻璃层、或者换言之是重掺杂硼的氧化硅层。因此,在产生于随后的制造步骤的退火之后,被包含在层22中的硼在下层半导体中具有处于非常高浓度的非常浅的扩散。重掺杂P型层24因此形成在区域14的表面。应该注意的是,扩散不影响具有强得多的掺杂的N+区域。
优选地,各个层的掺杂水平和退火时间被选择成垂直于层24、14、13和12得到图4中示出的类型的浓度分布。
因此可以观察到,如果层14被适度掺杂(例如,处于在1018at./cm3的数量级上的最大掺杂),则归因于层24的存在,浅层具有在1020at./cm3的数量级上的处于上部氧化物的水平的最大掺杂。作为结果,在非常重掺杂的区域与上部绝缘体之间的界面处,暗电流发生变得可以可忽略不计。事实上,当半导体掺杂(例如,硅)增加时在绝缘层与半导体层之间的界面处的电子空穴对的产生减少。作为示例,在60℃处的测量显示,暗电流对于图1中的类型的器件是100pA/cm2,并且对于图3中的类型的器件是其近似一半。
在制造模式中,在已经形成了横向绝缘区20和21并接着形成了包括绝缘栅极18和N型源极区13的MOS器件15之后,沉积以处于从5x1021at./cm3至2x1022at./cm3的范围内(例如1x1022at./cm3)的浓度利用硼掺杂的、具有近似在从5nm至20nm(例如,10nm)的范围内的厚度的氧化硅层22。
本文中所描述的实施例可能有很多变化。例如,光电二极管的所有导电类型可以被反转。在该情况中,重掺杂硼的绝缘体层将被替换为重掺杂有砷或磷(例如,PSG)的绝缘体层。
示出的针扎光电二极管的具体形式仅是示例。可以使用光电二极管的其他形式以及其他转移晶体管布局。此外,在包括光电二极管和转移晶体管的各像素中,将优选地集成其他元件,例如复位晶体管。
在图3中,用虚线指示出了P型层14的限制。这图示出该层是可选的事实。可以仅提供产生于被包含在覆盖结构的绝缘体中的掺杂剂的扩散的、非常薄的高掺杂水平的层。另一方面,掺杂绝缘体22已经示出为覆盖整个结构。在具体实施例中,可以提供该绝缘体的先前的蚀刻使得它仅覆盖光电二极管的有用区域。
这样的变更、修改和改进旨在作为该公开的一部分,并旨在处于本公开的精神和范围内。于是,前述描述仅以示例的方式并且不旨在限制性的。
上述各种实施例可以被组合以提供进一步的实施例。可以鉴于上面详述的描述对实施例做出这些以及其他改变。一般情况下,在下面的权利要求中,所使用的术语不应该被解释为将权利要求限制为说明书和权利要求中所公开的具体实施例,而是应该解释为所有可能的实施例连同这样的权利要求赋予的等同替换的全部范围。因此,权利要求不受公开的限制。

Claims (16)

1.一种制造针扎光电二极管的方法,包括:
在第二导电类型的衬底上形成第一导电类型的转换区域,所述转换区域被配置成将光子转换成电荷;
在所述转换区域上形成所述第二导电类型的浅半导体区域;
用掺杂有所述第二导电类型的掺杂剂的重掺杂绝缘体层涂覆所述浅半导体区域,所述浅半导体区域位于所述转换区域与所述重掺杂绝缘体层之间;以及
将掺杂剂扩散从所述重掺杂绝缘体层提供到所述浅半导体区域中。
2.根据权利要求1所述的方法,其中所述转换区域是N型的并且所述重掺杂绝缘体层是掺杂硼的氧化硅层。
3.根据权利要求2所述的方法,其中所述掺杂硼的氧化硅层掺杂有从5x1021at./cm3至2x1022at./cm3的硼浓度。
4.根据权利要求1所述的方法,进一步包括在所述转换区域上形成所述第二导电类型的浅半导体区域,其中提供所述掺杂剂扩散包括使掺杂剂从所述重掺杂绝缘体层扩散到所述浅半导体区域中至小于50nm的渗透深度。
5.根据权利要求4所述的方法,其中所述渗透深度小于10nm。
6.根据权利要求1所述的方法,包括在用所述重掺杂绝缘体层涂覆所述第二导电类型的注入层之前,利用具有在从1017at./cm3至1018at./cm3的范围内的最大掺杂水平的所述第二导电类型的所述注入层涂覆所述转换区域。
7.根据权利要求1所述的方法,其中提供所述掺杂剂扩散包括使掺杂剂从所述重掺杂绝缘体层扩散到所述转换区域中至小于50nm的渗透深度。
8.一种针扎光电二极管,包括:
第一导电类型的转换区域,形成在第二导电类型的衬底上,所述转换区域被配置成将光子转换成电荷;
所述第二导电类型的扩散层,形成在所述转换区域上;
所述第二导电类型的浅半导体区域,位于所述扩散层和所述转换区域之间;和
重掺杂绝缘体层,所述重掺杂绝缘体层涂覆所述扩散层,所述重掺杂绝缘体层是所述第二导电类型的。
9.根据权利要求8所述的针扎光电二极管,其中所述重掺杂绝缘体层是处于从5x1021at./cm3至2x1022at./cm3硼浓度的掺杂硼的氧化硅。
10.根据权利要求8所述的针扎光电二极管,进一步包括被定位在所述扩散层与所述转换区域之间的所述第二导电类型的浅半导体区域。
11.根据权利要求10所述的针扎光电二极管,其中所述浅半导体区域具有在1018at./cm3的数量级上的最大掺杂并且所述扩散层具有在1020at./cm3的数量级上的最大掺杂。
12.一种电子器件,包括:
转移晶体管;和
针扎光电二极管,所述针扎光电二极管包括:
第一导电类型的转换区域,形成在第二导电类型的衬底上,所述转换区域被配置成将光子转换成电荷;
所述第二导电类型的扩散层,形成在所述转换区域上;
所述第二导电类型的浅半导体区域,位于所述扩散层和所述转换区域之间;和
重掺杂绝缘体层,所述重掺杂绝缘体层涂覆所述扩散层,所述重掺杂绝缘体层是所述第二导电类型的。
13.根据权利要求12所述的电子器件,其中所述重掺杂绝缘体层是处于从5x1021at./cm3至2x1022at./cm3硼浓度的掺杂硼的氧化硅。
14.根据权利要求12所述的电子器件,进一步包括被定位在所述扩散层与所述转换区域之间的所述第二导电类型的浅半导体区域。
15.根据权利要求14所述的电子器件,其中所述浅半导体区域具有在1018at./cm3的数量级上的最大掺杂并且所述扩散层具有在1020at./cm3的数量级上的最大掺杂。
16.根据权利要求12所述的电子器件,其中所述转移晶体管包括绝缘栅极、漏极和源极,所述源极是所述转换区域的至少一部分。
CN201510618059.1A 2014-10-10 2015-09-24 具有低暗电流的针扎光电二极管 Active CN105514214B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810344158.9A CN108649042A (zh) 2014-10-10 2015-09-24 具有低暗电流的针扎光电二极管

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1459727A FR3027156A1 (fr) 2014-10-10 2014-10-10 Photodiode pincee a faible courant d'obscurite
FR1459727 2014-10-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810344158.9A Division CN108649042A (zh) 2014-10-10 2015-09-24 具有低暗电流的针扎光电二极管

Publications (2)

Publication Number Publication Date
CN105514214A CN105514214A (zh) 2016-04-20
CN105514214B true CN105514214B (zh) 2018-05-04

Family

ID=51987382

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201520748643.4U Active CN205355067U (zh) 2014-10-10 2015-09-24 针扎光电二极管以及电子器件
CN201510618059.1A Active CN105514214B (zh) 2014-10-10 2015-09-24 具有低暗电流的针扎光电二极管
CN201810344158.9A Pending CN108649042A (zh) 2014-10-10 2015-09-24 具有低暗电流的针扎光电二极管

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201520748643.4U Active CN205355067U (zh) 2014-10-10 2015-09-24 针扎光电二极管以及电子器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201810344158.9A Pending CN108649042A (zh) 2014-10-10 2015-09-24 具有低暗电流的针扎光电二极管

Country Status (3)

Country Link
US (1) US9711550B2 (zh)
CN (3) CN205355067U (zh)
FR (1) FR3027156A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3027156A1 (fr) * 2014-10-10 2016-04-15 St Microelectronics Crolles 2 Sas Photodiode pincee a faible courant d'obscurite
US9755100B2 (en) 2016-01-29 2017-09-05 International Business Machines Corporation Reducing dark current in germanium photodiodes by electrical over-stress
JP7040858B2 (ja) * 2017-09-22 2022-03-23 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
CN109346467A (zh) * 2018-08-17 2019-02-15 矽力杰半导体技术(杭州)有限公司 半导体结构、驱动芯片和半导体结构的制造方法
CN110085705A (zh) * 2019-04-30 2019-08-02 德淮半导体有限公司 半导体器件的形成方法
US11424377B2 (en) 2020-10-08 2022-08-23 Globalfoundries U.S. Inc. Photodiode with integrated, light focusing element
US11949034B2 (en) 2022-06-24 2024-04-02 Globalfoundries U.S. Inc. Photodetector with dual doped semiconductor material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
CN104009050A (zh) * 2013-02-26 2014-08-27 全视科技有限公司 用于消除具有掺杂等离子体的钉扎层的像素中的滞后的工艺及其设备
CN205355067U (zh) * 2014-10-10 2016-06-29 意法半导体有限公司 针扎光电二极管以及电子器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
US7122408B2 (en) * 2003-06-16 2006-10-17 Micron Technology, Inc. Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
US7141836B1 (en) * 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
US7115924B1 (en) * 2005-06-03 2006-10-03 Avago Technologies Sensor Ip Pte. Ltd. Pixel with asymmetric transfer gate channel doping

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
CN104009050A (zh) * 2013-02-26 2014-08-27 全视科技有限公司 用于消除具有掺杂等离子体的钉扎层的像素中的滞后的工艺及其设备
CN205355067U (zh) * 2014-10-10 2016-06-29 意法半导体有限公司 针扎光电二极管以及电子器件

Also Published As

Publication number Publication date
FR3027156A1 (fr) 2016-04-15
CN108649042A (zh) 2018-10-12
US20160104729A1 (en) 2016-04-14
CN205355067U (zh) 2016-06-29
US9711550B2 (en) 2017-07-18
CN105514214A (zh) 2016-04-20

Similar Documents

Publication Publication Date Title
CN105514214B (zh) 具有低暗电流的针扎光电二极管
US8426936B2 (en) Vertical Hall sensor and method of producing a vertical Hall sensor
CN105448979B (zh) 横向双扩散场效应管及其形成方法
US7981783B2 (en) Semiconductor device and method for fabricating the same
CN111108593B (zh) 窄深沟槽的沉降物至掩埋层连接区域
CN105720098B (zh) Nldmos及其制作方法
CN104377216B (zh) 影像感测器与影像感测器的制造方法
JP2014504013A5 (zh)
KR20080081800A (ko) 주입 기술을 이용하여 이미지 센서들 내의 크로스토크를감소시키는 방법
CN102208439B (zh) 半导体装置及其制造方法
US8268697B2 (en) Silicon-on-insulator devices with buried depletion shield layer
US20160322262A1 (en) Integration of devices
US20230178677A1 (en) Single-photon avalanche photodiode
CN107425046A (zh) 一种ldmos器件及其制作方法
JP5558243B2 (ja) 半導体装置
CN106057905A (zh) 沟槽栅场效应晶体管及制造方法
CN106935646A (zh) 埋藏沟道晶体管及其形成方法
CN109244097A (zh) 图像传感器及其形成方法
CN104934450B (zh) 图像传感器及其制作方法
JP6295444B2 (ja) 半導体装置
CN107369680A (zh) 一种具有深槽隔离结构的tvs及其制造方法
CN105914251A (zh) 半导体装置、成像设备及制造半导体装置的方法
US20140117436A1 (en) Semiconductor device and method for fabricating the same
CN106653823A (zh) 半导体器件
CN107546276A (zh) 带有注入式背栅的集成jfet结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: Montrouge, France

Patentee after: STMicroelectronics France

Country or region after: France

Patentee after: STMICROELECTRONICS (CROLLES 2) S.A.S.

Address before: France

Patentee before: STMicroelectronics S.A.

Country or region before: France

Patentee before: STMICROELECTRONICS (CROLLES 2) S.A.S.

CP03 Change of name, title or address