CN104009050A - 用于消除具有掺杂等离子体的钉扎层的像素中的滞后的工艺及其设备 - Google Patents
用于消除具有掺杂等离子体的钉扎层的像素中的滞后的工艺及其设备 Download PDFInfo
- Publication number
- CN104009050A CN104009050A CN201310698090.1A CN201310698090A CN104009050A CN 104009050 A CN104009050 A CN 104009050A CN 201310698090 A CN201310698090 A CN 201310698090A CN 104009050 A CN104009050 A CN 104009050A
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- China
- Prior art keywords
- transfer gate
- photosensitive region
- layer
- sacrifice
- substrate
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Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims description 28
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 125000005375 organosiloxane group Chemical group 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 4
- 125000006850 spacer group Chemical group 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/777,197 US8921187B2 (en) | 2013-02-26 | 2013-02-26 | Process to eliminate lag in pixels having a plasma-doped pinning layer |
US13/777,197 | 2013-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104009050A true CN104009050A (zh) | 2014-08-27 |
CN104009050B CN104009050B (zh) | 2017-04-12 |
Family
ID=51369643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310698090.1A Active CN104009050B (zh) | 2013-02-26 | 2013-12-18 | 用于消除具有掺杂等离子体的钉扎层的像素中的滞后的工艺及其设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8921187B2 (zh) |
CN (1) | CN104009050B (zh) |
TW (1) | TWI515886B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514214A (zh) * | 2014-10-10 | 2016-04-20 | 意法半导体有限公司 | 具有低暗电流的针扎光电二极管 |
CN105633104A (zh) * | 2014-10-28 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 图像传感器及其形成方法 |
CN109564277A (zh) * | 2016-08-12 | 2019-04-02 | 索尼深度传感解决方案股份有限公司 | 具有载流子生成的钉扎光电二极管的解调器及其操作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1855521A (zh) * | 2005-04-06 | 2006-11-01 | 国际商业机器公司 | 具有减小的钉扎层势垒的像素传感器单元及其形成方法 |
US7528427B2 (en) * | 2007-01-30 | 2009-05-05 | International Business Machines Corporation | Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential |
US20100314667A1 (en) * | 2009-06-11 | 2010-12-16 | Omnivision Technologies, Inc. | Cmos pixel with dual-element transfer gate |
CN101939839A (zh) * | 2008-02-08 | 2011-01-05 | 美商豪威科技股份有限公司 | 具有背面p+掺杂层的背面受光影像传感器 |
CN101997016A (zh) * | 2009-08-07 | 2011-03-30 | 美商豪威科技股份有限公司 | 具有含多个沟道子区域的传输栅极的图像传感器 |
CN102446940A (zh) * | 2010-09-30 | 2012-05-09 | 美商豪威科技股份有限公司 | 图像传感器中的光侦测器隔离 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165473A (en) | 1980-05-24 | 1981-12-19 | Semiconductor Res Found | Semiconductor pickup device |
US4545526A (en) | 1983-06-03 | 1985-10-08 | Toyota Jidosha Kabushiki Kaisha | Air conditioner for vehicle |
US20080057701A1 (en) * | 2006-09-01 | 2008-03-06 | Texas Instruments Incorporated | Method for prevention of resist poisoning in integrated circuit fabrication |
US20090124038A1 (en) | 2007-11-14 | 2009-05-14 | Mark Ewing Tuttle | Imager device, camera, and method of manufacturing a back side illuminated imager |
US7901974B2 (en) | 2008-02-08 | 2011-03-08 | Omnivision Technologies, Inc. | Masked laser anneal during fabrication of backside illuminated image sensors |
US7888215B2 (en) * | 2008-06-04 | 2011-02-15 | Omnivision Technologies, Inc. | CMOS image sensor with high full-well-capacity |
US8614112B2 (en) | 2010-10-01 | 2013-12-24 | Omnivision Technologies, Inc. | Method of damage-free impurity doping for CMOS image sensors |
-
2013
- 2013-02-26 US US13/777,197 patent/US8921187B2/en active Active
- 2013-10-30 TW TW102139385A patent/TWI515886B/zh active
- 2013-12-18 CN CN201310698090.1A patent/CN104009050B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1855521A (zh) * | 2005-04-06 | 2006-11-01 | 国际商业机器公司 | 具有减小的钉扎层势垒的像素传感器单元及其形成方法 |
US7528427B2 (en) * | 2007-01-30 | 2009-05-05 | International Business Machines Corporation | Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential |
CN101939839A (zh) * | 2008-02-08 | 2011-01-05 | 美商豪威科技股份有限公司 | 具有背面p+掺杂层的背面受光影像传感器 |
US20100314667A1 (en) * | 2009-06-11 | 2010-12-16 | Omnivision Technologies, Inc. | Cmos pixel with dual-element transfer gate |
CN101997016A (zh) * | 2009-08-07 | 2011-03-30 | 美商豪威科技股份有限公司 | 具有含多个沟道子区域的传输栅极的图像传感器 |
CN102446940A (zh) * | 2010-09-30 | 2012-05-09 | 美商豪威科技股份有限公司 | 图像传感器中的光侦测器隔离 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514214A (zh) * | 2014-10-10 | 2016-04-20 | 意法半导体有限公司 | 具有低暗电流的针扎光电二极管 |
CN105514214B (zh) * | 2014-10-10 | 2018-05-04 | 意法半导体有限公司 | 具有低暗电流的针扎光电二极管 |
CN105633104A (zh) * | 2014-10-28 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 图像传感器及其形成方法 |
CN109564277A (zh) * | 2016-08-12 | 2019-04-02 | 索尼深度传感解决方案股份有限公司 | 具有载流子生成的钉扎光电二极管的解调器及其操作方法 |
US11709238B2 (en) | 2016-08-12 | 2023-07-25 | Sony Depthsensing Solutions Sa/Nv | Demodulator with a carrier generating pinned photodiode and a method for operating it |
Also Published As
Publication number | Publication date |
---|---|
TWI515886B (zh) | 2016-01-01 |
TW201434145A (zh) | 2014-09-01 |
US8921187B2 (en) | 2014-12-30 |
US20140239351A1 (en) | 2014-08-28 |
CN104009050B (zh) | 2017-04-12 |
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