CN108091595B - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- CN108091595B CN108091595B CN201711161961.0A CN201711161961A CN108091595B CN 108091595 B CN108091595 B CN 108091595B CN 201711161961 A CN201711161961 A CN 201711161961A CN 108091595 B CN108091595 B CN 108091595B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a substrate processing apparatus and a substrate processing method. The substrate processing apparatus having an injection part injecting a chemical solution onto a substrate may include: a driving member for providing a driving force for gradually raising the jetting member upward of the substrate in an oblique direction with respect to the substrate when the jetting member is directed toward the first end of the substrate; and a control unit that controls the drive unit so that a start point of rising of the ejection unit on the substrate is determined based on a relative speed of the ejection unit with respect to the substrate. The invention can change the rising starting point of the injection component according to the relative speed of the injection component relative to the substrate.
Description
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus including an injection member capable of injecting a chemical solution onto a substrate and a substrate processing method using the substrate processing apparatus.
The present application is preferably made in korean patent application No. 2016-0155533, which was filed from korean patent office on 22/11/2016.
Background
A process of forming various thin films on a substrate is performed in order to manufacture a semiconductor device or a display device. Such a thin film forming process is generally performed by a substrate processing apparatus including an injection member that injects a chemical solution onto the substrate. In this case, the thin film should be uniformly formed on the entire surface of the substrate.
In the step of forming a thin film on a substrate using a conventional substrate processing apparatus, when the spray member is positioned at one end of the substrate, the spray member is raised in a vertical direction toward an upper portion of the substrate as the supply of the chemical solution to the spray member is interrupted.
When the injection member rises in the vertical direction from the one-side end portion of the substrate, the portion of the liquid medicine amount between the injection member and the one-side end portion of the substrate may be stretched and eventually broken. In this case, the chemical solution may be condensed at one end of the substrate, which may reduce uniformity of a thin film formed on the substrate and increase a degree of contamination of an end of the spray member.
Recently, when the injection member is directed to one end portion of the substrate, the injection member is raised to an upper portion of the substrate in a diagonal direction, thereby reducing stretching of the chemical solution between the injection member and the one end portion of the substrate. When the ejection member is raised in a diagonal direction with respect to the substrate, the ejection member is raised from a predetermined rise start point on the substrate to an upper portion of the substrate, and thus a change in viscosity of the chemical solution or a rise speed of the ejection member may not be appropriately coped with.
Disclosure of Invention
Technical problem
An object of the present invention is to provide a substrate processing apparatus capable of changing a rising start point of an ejection member according to a relative speed of the ejection member with respect to a substrate.
Another object of the present invention is to provide a substrate processing method capable of changing a rising start point of an ejection part according to a relative speed of the ejection part with respect to a substrate.
Technical scheme
According to an aspect of the present invention, there is provided a substrate processing apparatus having an injection part that injects a chemical solution onto a substrate. The substrate processing apparatus may include a driving part and a control part. The driving member may provide a driving force for gradually raising the ejection member in an oblique direction with respect to the substrate toward an upper portion of the substrate when the ejection member is directed toward the first end portion of the substrate. The control means may control the drive means such that a rising start point of the ejection means on the substrate is determined according to a relative speed of the ejection means with respect to the substrate when the ejection means is toward the first end portion of the substrate.
According to an embodiment, the control means may control the drive means so that a first position relatively close to a first end portion of the substrate is a rising start point of the ejection means in a case where a relative speed of the ejection means with respect to the substrate is relatively high. Further, the driving member may be controlled so that a second position relatively distant from the first end portion of the substrate is a rising start point of the ejecting member when a relative speed of the ejecting member with respect to the substrate is relatively low.
According to another embodiment, the control means may control the drive means to change a rising height of the ejection means of the upper portion of the substrate while a relative speed of the ejection means with respect to the substrate is substantially maintained at a predetermined value. For example, the rising height of the ejection part varies with the viscosity of the liquid medicine.
According to an embodiment, when the chemical solution is sprayed onto the substrate, the spraying member may be fixed and the substrate may be moved, or the substrate may be fixed and the spraying member may be moved, or the substrate and the spraying member may be moved in opposite directions.
According to an embodiment, the chemical solution may be ejected onto the substrate in a scanning manner from the second end portion of the substrate to the first end portion of the substrate.
According to another aspect of the present invention, there is provided a substrate processing method using a substrate processing apparatus having an injection part that injects a chemical solution onto a substrate. According to the substrate processing method, the ejection member may be moved toward the first end portion of the substrate. The rising start point of the ejection member on the substrate may be changed according to a relative speed of the ejection member with respect to the substrate when the ejection member is directed toward the first end portion of the substrate.
In the changing of the rising start point of the spray member according to the embodiment, the spray member may be raised from a first position relatively close to the first end of the substrate toward the upper portion of the substrate in a case where a relative speed of the spray member with respect to the substrate is relatively high, and the spray member may be raised from a second position relatively distant from the first end of the substrate toward the upper portion of the substrate in a case where the relative speed of the spray member with respect to the substrate is relatively low.
In the changing of the rising start point of the spray member according to another embodiment, the rising height of the spray member on the upper portion of the substrate may be changed while the rising start point of the spray member on the substrate is kept constant, while maintaining a relative speed of the spray member with respect to the substrate at a certain value. In this case, the rising height of the ejection member may vary depending on the viscosity of the liquid medicine.
According to an embodiment, the chemical solution may be sprayed onto the substrate while the spraying member is fixed and the substrate is moving, or may be sprayed onto the substrate while the substrate is fixed and the spraying member is moving, or may be sprayed onto the substrate while the substrate and the spraying member are moving in opposite directions, respectively.
According to an embodiment, the chemical solution may be ejected onto the substrate in a scanning manner from the second end portion of the substrate to the first end portion of the substrate.
Technical effects
According to an embodiment of the present invention, a rising start point or a rising height of the injection member may be determined according to a relative speed of the injection member with respect to the substrate toward an end of the substrate. That is, the rising start point or the rising height of the ejection member does not depend on a preset position or a preset height, but depends on the relative speed of the ejection member with respect to the substrate. Therefore, even if the characteristics of the chemical solution change, the speed of the injection member changes, or the like, the amount of the chemical solution injected from the injection member onto the substrate can be substantially uniformly maintained by changing the start point or the height of the injection member, and a thin film having a substantially uniform thickness can be formed on the substrate including the end portion of the substrate.
Drawings
FIG. 1 is a schematic view schematically showing a substrate processing apparatus according to an embodiment of the present invention;
fig. 2 and 3 are schematic views for explaining a process of driving the ejection part of the substrate processing apparatus according to the embodiment of the present invention.
Detailed Description
The following describes a substrate processing apparatus and a substrate processing method according to embodiments of the present invention. The present invention may be variously modified and variously modified, and embodiments will be specifically described in the following description. However, the present invention is not limited to the specific forms disclosed, and the present invention should be understood to include all modifications, equivalents, and alternatives falling within the spirit and scope of the present invention. In the description of the drawings, like components are denoted by like reference numerals. The terms first, second, etc. may be used to describe various components, but the components are not limited to the terms. The above terms are used only to distinguish one constituent element from another constituent element. The terminology used in the description presented herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions also include plural expressions without other specific indications. The terms "comprises" or "comprising" or the like in the present application should be interpreted as referring to the presence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should not be interpreted as excluding one or more other features or numbers, steps, actions, components, parts, or combinations thereof.
Unless defined otherwise, all terms including technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art. Terms defined in commonly used dictionaries should be interpreted as having meanings consistent with the context of the relevant art and should not be interpreted in an ideal or excessive formal sense unless explicitly defined by the present application.
Fig. 1 is a schematic view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
Referring to fig. 1, a substrate processing apparatus 10 according to an embodiment of the present invention may include a chemical supplying device capable of spraying a predetermined chemical 13 onto a substrate 15, typically for forming a thin film such as a photoresist film onto the substrate 15. The substrate processing apparatus 10 can be used in a process for manufacturing a semiconductor device, but is more preferably used in a process for manufacturing a flat panel display device.
The substrate processing apparatus 10 may include an injection part 11, a driving part 17, a control part 19, and the like. The injection member 11 may supply the chemical liquid 13 to the substrate 15, and the driving member 17 may supply a driving force for gradually raising the injection member 11 substantially in an oblique direction on the substrate 15. The control unit 19 may adjust the rising characteristics of the driving unit 17 such as a rising start point, a rising height, a rising speed, and a rising position on the substrate 15.
According to an embodiment, the substrate processing apparatus 10 may be used for a process of coating a photoresist on the substrate 15 to form the photoresist film on the substrate 15. In this case, the jetting member 11 may be disposed to face the substrate 15 located at a lower portion of the jetting member 11. In other words, the ejection part 11 may be disposed substantially opposite to the substrate 15.
In the substrate processing apparatus 10, when the photoresist is coated on the substrate 15, the spraying unit 11 may spray the chemical solution 13 onto the substrate 15 in a scanning manner. According to an embodiment, the chemical liquid 13 may be supplied from the spray part 11 onto the substrate 15 in the scanning manner while the spray part 11 is moved from the second end portion of the substrate 15 to the first end portion of the substrate 15 on the upper portion of the substrate 15. Wherein the spraying part 11 may comprise a nozzle, which may have substantially the same or similar length as the width of the substrate 15.
When the chemical liquid 13 is sprayed onto the substrate 15 from the spraying part 11 of the substrate processing apparatus 10, the substrate 15 may be fixed on a table (not shown) and the spraying part 11 may be moved from the second end of the substrate 15 to the first end of the substrate 15. According to another embodiment, the spraying part 11 may be fixed on an upper portion of the substrate 15, and the substrate 15 on the stage may be moved such that a second end portion of the substrate 15 to a first end portion of the substrate 15 passes through a lower portion of the spraying part 11. According to yet another embodiment, the injection member 11 and the substrate 15 may be moved substantially in opposite directions while the chemical liquid 13 is injected from the injection member 11 onto the substrate 15.
According to an embodiment, in the case where the spray part 11 moves on the upper portion of the substrate 15, the moving speed of the spray part 11 may be expressed as a relative speed of the spray part 11 with respect to the substrate 15. In addition, in the case where the substrate 15 moves in the lower portion of the jetting part 11, the moving speed of the substrate 15 may be expressed as a relative speed of the substrate 15 with respect to the jetting part 11.
According to an embodiment, the thin film formed on the substrate 15 using the substrate treatment apparatus 10 may have an entirely uniform thickness on the upper surface of the substrate 15. In order to form a thin film having a uniform thickness on the substrate 15, the amount of the chemical liquid 13 sprayed from the spraying means 11 onto the substrate 15 should be kept substantially the same over the entire upper surface of the substrate 15. When the chemical liquid 13 is supplied from the spraying member 11 onto the substrate 15, if the spraying member 11 is positioned above the first end of the substrate 15, the spraying member 11 can be raised in a direction substantially perpendicular to the substrate 15 as the spraying member 11 interrupts the supply of the chemical liquid 13. Alternatively, the injection member 11 may be lifted up substantially in a diagonal direction to a preset lifted position with respect to the substrate 15 as the injection member 11 interrupts the supply of the chemical liquid 13. In this case, since the chemical liquid 13 sprayed onto the first end portion of the substrate 15 may be condensed, the uniformity of the thickness of the thin film sprayed onto the substrate 15 may be reduced, and the degree of contamination of the end portion of the spray member 11 may be increased.
In view of these problems, according to the embodiment, the rising start point of the spraying member 11 on the substrate 15 may be adjusted according to the relative speed of the spraying member 11 with respect to the substrate 15 when the spraying member 11 is directed toward the first end portion of the substrate 15 during the spraying of the chemical liquid 13 onto the substrate 15 by the substrate processing apparatus 10. For this, the substrate processing apparatus 10 may include a driving member 17 capable of providing a driving force for gradually raising the spraying member 11 in the oblique direction when the spraying member 11 faces the first end of the substrate 15. The substrate processing apparatus 10 may further include the control unit 19 capable of controlling the driving unit 17. For example, the control part 19 may control the drive part 17 such that a rising start point of the jetting part 11 on the substrate 15 is determined according to a relative speed of the jetting part 11 with respect to the substrate 15 during the jetting part 11 toward the first end of the substrate 15.
Fig. 2 and 3 are schematic views for explaining a process of driving the ejection part of the substrate processing apparatus according to the embodiment of the present invention.
Referring to fig. 2, the rising start point of the ejection part 11 on the substrate 15 may vary with the relative speed of the ejection part 11 with respect to the substrate 15. In the case where the relative speed of the ejecting member 11 with respect to the substrate 15 is relatively high, the control member 19 may adjust the driving member 17 such that a first position B relatively close to the first end portion of the substrate 15 becomes a rising start point of the ejecting member 11. On the other hand, when the relative speed of the ejecting member 11 with respect to the substrate 15 is relatively low, the control member 19 may control the driving member 17 so that a second position a relatively distant from the first end portion of the substrate 15 becomes a rising start point of the ejecting member 11.
According to an embodiment, when the spray member 11 is raised from a first position B relatively close to the first end of the substrate 15 toward an upper portion of the substrate 15, the spray member 11 may be raised along a first curve 23 having a relatively large inclination. On the other hand, when the jetting member 11 is raised from the second position a relatively distant from the first end portion of the substrate 15 toward the upper portion of the substrate 15, the jetting member 11 may be raised along a second curve 21 having a relatively small inclination. Therefore, when the relative speed of the jetting member 11 with respect to the substrate 15 is relatively high, the size of the region in which the jetting member 11 rises above the substrate 15 can be reduced, and when the relative speed of the jetting member 11 with respect to the substrate 15 is relatively low, the size of the region in which the jetting member 11 rises above the substrate 15 can be increased. In other words, while the overall time for ejecting the chemical liquid 13 from the ejecting member 11 onto the substrate 15 is kept substantially constant while the chemical liquid 13 is ejected onto the substrate 15 by the substrate processing apparatus 10, the time for raising the ejecting member 11 from the substrate 15 may be changed according to the relative speed of the ejecting member 11 with respect to the substrate 15.
As shown in fig. 2, since the chemical liquid 13 can be ejected from the ejection member 11 onto the substrate 15 based on the relative speed of the ejection member 11 with respect to the substrate 15, the amount of the chemical liquid 13 ejected onto the first end portion of the substrate 15 can be maintained substantially uniform.
Referring to fig. 3, the control part 19 may adjust the driving part 17 to change the rising height of the jetting part 11 above the substrate 15 in a case where the relative speed of the jetting part 11 with respect to the substrate 15 is substantially a predetermined value. When the relative speed of the jetting member 11 with respect to the substrate 15 is substantially a predetermined value, the starting point C at which the jetting member 11 rises above the substrate 15 is substantially constant, but the height at which the jetting member 11 rises above the substrate 15 can be changed. For example, in the case where the spray member 11 is raised to a relatively high position above the substrate 15, the spray member 11 may be raised along a third curve 31 having a relatively large inclination. In contrast, in the case where the injection member 11 is raised to a relatively low position above the substrate 15, the injection member 11 may be raised along a fourth curve 33 having a relatively small inclination.
According to some embodiments, the elevation height of the spraying member 11 above the substrate 15 may vary according to the characteristics of the medical fluid 13, such as the viscosity of the medical fluid 13. When the viscosity of the chemical liquid 13 is relatively high, the ejection member 11 may be raised to a relatively low position above the substrate 15. On the other hand, when the viscosity of the chemical liquid 13 is relatively low, the spraying member 11 can be raised to a relatively high position above the substrate 15. According to another embodiment, the spraying member 11 may be raised to a relatively high position above the substrate 15 in the case where the viscosity of the chemical liquid 13 is relatively large, and the spraying member 11 may be raised to a relatively low position above the substrate 15 in the case where the viscosity of the chemical liquid 13 is relatively small.
According to the substrate processing apparatus 10 of the embodiment, since the chemical liquid 13 can be ejected from the ejection member 11 onto the substrate 15 based on the height of the ejection member 11 above the substrate 15, the amount of the chemical liquid 13 ejected onto the first end portion of the substrate 15 can be maintained substantially uniform. In addition, even when the relative speed of the ejection member 11 with respect to the substrate 15 is changed, the elevation height of the ejection member 11 above the substrate 15 can be changed while the elevation starting point of the ejection member 11 on the substrate 15 is kept substantially constant.
As described above, according to the substrate processing apparatus 10 of the embodiment, the chemical liquid 13 is sprayed onto the substrate 15 while changing the rising start point of the spraying member 11 or changing the rising height of the spraying member 11 according to the relative speed of the spraying member 11 with respect to the substrate 15, and therefore, the substrate processing apparatus 10 can more effectively cope with the characteristics of the chemical liquid 13 (for example, viscosity of the chemical liquid 13), the change of process conditions for manufacturing the display device or the semiconductor device, and the like. For example, the substrate processing apparatus 10 may form a thin film having a uniform thickness over the entire substrate including the end portion.
The following describes a substrate processing method according to an embodiment of the present invention.
The substrate processing method of the embodiment may be performed using the substrate processing apparatus 10 described with reference to fig. 1. Therefore, the substrate processing method of the embodiment will be described with reference to the constituent elements of the substrate processing apparatus 10 shown in fig. 1.
As shown in fig. 1, the substrate 15 on which the chemical liquid 13 is injected may be disposed below the injection member 11. The injection member 11 may inject the chemical liquid 13 onto the substrate 15 toward the substrate 15. According to an embodiment, the spraying means 11 may be moved from the second end portion of the substrate 15 to the first end portion of the substrate 15, while the spraying means 11 supplies the chemical liquid 13 onto the substrate 15 in a scanning manner.
In the case where the jetting member 11 is directed toward the first end portion of the substrate 15, the start point of the rise of the jetting member 11 may be determined based on the relative speed of the jetting member 11 with respect to the substrate 15. According to the embodiment, in the case where the relative speed of the jetting member 11 with respect to the substrate 15 is changed, the rising start point of the jetting member 11 above the substrate 15 may be changed while keeping the rising height of the jetting member 11 above the substrate 15 substantially at a predetermined value. According to another embodiment, in the case where the relative speed of the jetting member 11 with respect to the substrate 15 is substantially a predetermined value, the rising height of the jetting member 15 above the substrate 15 may be changed while keeping the rising start point of the jetting member 11 on the substrate 15 constant. For example, when the relative speed of the jetting member 11 with respect to the substrate 15 is relatively high, the jetting member 11 may be raised from a first position relatively close to the first end of the substrate 15 toward the upper portion of the substrate 15. When the relative speed of the jetting member 11 with respect to the substrate 15 is relatively low, the jetting member 11 may be raised from a second position relatively distant from the first end of the substrate 15 toward the upper portion of the substrate 15. In particular, in the case where the relative speed of the jetting member 11 with respect to the substrate 15 is maintained at a substantially predetermined value, the rising height of the jetting member 11 above the substrate 15 can be changed while maintaining the rising start point of the jetting member 11 on the substrate 15 at a substantially predetermined point. According to still another embodiment, even in the case where the relative speed of the jetting member 11 with respect to the substrate 15 is changed, the rising height of the jetting member 11 above the substrate 15 can be changed while maintaining the rising start point of the jetting member 11 on the substrate 15 at substantially a predetermined point.
According to the substrate processing method of the embodiment, the chemical liquid 13 may be ejected from the ejection part 11 onto the substrate 15 while changing a rising start point of the ejection part 11 or a rising height of the ejection part 11 according to a relative speed of the ejection part 11 with respect to the substrate 15. The substrate processing method can more effectively cope with the characteristics of the chemical liquid 13 (for example, viscosity of the chemical liquid 13), the change of process conditions for manufacturing the display device or the semiconductor device, and the like, and can form a thin film having a uniform thickness over the entire substrate including the end portion.
When the substrate processing apparatus and the substrate processing method according to the embodiments of the present invention are used in a process of manufacturing a semiconductor device or a display device, even when a change in viscosity of a chemical solution or a change in speed of an ejection member occurs, a predetermined chemical solution can be ejected onto a substrate in a uniform amount as a whole by changing a rising start point or a rising height of the ejection member. Therefore, the quality of the semiconductor device or the display device can be improved.
While the present invention has been described with reference to the embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention as defined in the claims.
Claims (10)
1. A substrate processing apparatus having an ejection member for ejecting a chemical solution onto a substrate, comprising:
a driving member that supplies a driving force for gradually raising the ejection member upward of the substrate in an oblique direction with respect to the substrate when the ejection member is directed toward a first end of the substrate; and
a control means that controls the drive means so that a rising start point of the ejection means on the substrate is determined according to a relative speed of the ejection means with respect to the substrate when the ejection means is directed toward a first end portion of the substrate,
the control means controls the drive means such that a first position relatively close to a first end of the substrate is a start point of elevation of the ejection means when a relative speed of the ejection means with respect to the substrate is relatively high, and controls the drive means such that a second position relatively distant from the first end of the substrate is a start point of elevation of the ejection means when the relative speed of the ejection means with respect to the substrate is relatively low, such that a time of elevation of the ejection means varies with the relative speed of the ejection means while an overall time of ejection using the ejection means remains the same,
wherein the ejection means is configured to eject the chemical liquid by the same ejection amount over the entire substrate.
2. The substrate processing apparatus according to claim 1, wherein:
the control means controls the drive means to change a rising height of the ejection means above the substrate in a case where a relative speed of the ejection means with respect to the substrate is a predetermined value.
3. The substrate processing apparatus according to claim 2, wherein:
the rising height of the ejection part changes with the viscosity of the liquid medicine.
4. The substrate processing apparatus according to claim 1, wherein:
when the chemical solution is sprayed onto the substrate, the spraying member is fixed and the substrate is moved, or the substrate is fixed and the spraying member is moved, or the substrate and the spraying member are moved in opposite directions.
5. The substrate processing apparatus according to claim 1, wherein:
and spraying the chemical solution onto the substrate in a scanning manner from the second end portion of the substrate to the first end portion of the substrate.
6. A substrate processing method using a substrate processing apparatus having an ejection unit for ejecting a chemical solution onto a substrate, the substrate processing apparatus comprising:
moving the ejection member toward a first end of the substrate; and
a step of changing a rising start point of the ejection member on the substrate according to a relative speed of the ejection member with respect to the substrate when the ejection member is directed toward a first end portion of the substrate,
the step of changing the rising start point of the injection member includes:
raising the ejection member from a first position relatively close to a first end of the substrate toward an upper portion of the substrate when a relative speed of the ejection member with respect to the substrate is relatively high;
raising the jetting member from a second position relatively distant from the first end of the substrate toward an upper portion of the substrate when a relative speed of the jetting member with respect to the substrate is relatively low,
so that the time during which the spraying means rises varies with the relative speed of the spraying means while the overall time of spraying using the spraying means remains the same,
wherein the ejection means is configured to eject the chemical liquid by the same ejection amount over the entire substrate.
7. The substrate processing method according to claim 6, wherein the step of changing the rising start point of the ejection member comprises:
and changing a rising height of the jetting member above the substrate while keeping a rising start point of the jetting member on the substrate constant, while keeping a relative speed of the jetting member with respect to the substrate at a constant value.
8. The substrate processing method according to claim 7, wherein:
the rising height of the ejection part changes with the viscosity of the liquid medicine.
9. The substrate processing method according to claim 6, wherein:
the chemical liquid is sprayed onto the substrate while the spraying member is fixed and the substrate is moving, or is sprayed onto the substrate while the substrate is fixed and the spraying member is moving, or is sprayed onto the substrate while the substrate and the spraying member are moving in opposite directions, respectively.
10. The substrate processing method according to claim 6, wherein:
and spraying the chemical solution onto the substrate in a scanning manner from the second end portion of the substrate to the first end portion of the substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160155533A KR102017834B1 (en) | 2016-11-22 | 2016-11-22 | Apparatus for Processing a Substrate and Method for Processing a Substrate |
| KR10-2016-0155533 | 2016-11-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108091595A CN108091595A (en) | 2018-05-29 |
| CN108091595B true CN108091595B (en) | 2021-12-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711161961.0A Active CN108091595B (en) | 2016-11-22 | 2017-11-20 | Substrate processing apparatus and substrate processing method |
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| JP2000269214A (en) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
| CN1939603A (en) * | 2005-09-27 | 2007-04-04 | 东京毅力科创株式会社 | Coating method and coating device |
| CN102804337A (en) * | 2009-06-26 | 2012-11-28 | Soitec公司 | A method of bonding by molecular bonding |
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| JP3048789B2 (en) * | 1993-05-31 | 2000-06-05 | 平田機工株式会社 | Fluid coating device |
| JP3559182B2 (en) * | 1998-12-01 | 2004-08-25 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JP3701188B2 (en) * | 2000-10-04 | 2005-09-28 | 大日本スクリーン製造株式会社 | Substrate cleaning method and apparatus |
| KR20060124280A (en) * | 2005-05-31 | 2006-12-05 | 삼성전자주식회사 | System for controlling up and down speeds of nozzle and method controlling up and down speeds of nozzle |
| KR101205828B1 (en) * | 2008-11-14 | 2012-11-29 | 세메스 주식회사 | Substrate cleaning method |
| KR20140069677A (en) * | 2012-11-29 | 2014-06-10 | 삼성디스플레이 주식회사 | Device for printing to substrate and method for printing to substrate |
| KR20160051243A (en) * | 2014-11-03 | 2016-05-11 | 이윤택 | Manufacturing method of substrate graphene growth and substrate graphene growth and manufacturing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000269214A (en) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
| CN1939603A (en) * | 2005-09-27 | 2007-04-04 | 东京毅力科创株式会社 | Coating method and coating device |
| CN102804337A (en) * | 2009-06-26 | 2012-11-28 | Soitec公司 | A method of bonding by molecular bonding |
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| KR20180057190A (en) | 2018-05-30 |
| CN108091595A (en) | 2018-05-29 |
| KR102017834B1 (en) | 2019-09-03 |
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