CN108074737A - 一种贴片安规电容芯片材料及制备方法 - Google Patents
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Abstract
本发明提供了一种贴片安规电容芯片材料，其包括以下重量百分比的组分：碳酸锶40‑50％；二氧化钛20‑25％；碳酸钙20‑25％；三氧化二铋5‑7％；填料3‑5％。本发明同时还提供了一种贴片安规电容芯片材料的制备方法。本发明可以有效地解决现有技术中贴片电容的芯片材料无法满足轻薄化后强度要求的技术问题。
Description
技术领域
本发明涉及贴片电容技术领域，具体而言，涉及一种贴片安规电容芯片材料及制备方法。
背景技术
电容器是电子设备中被广泛应用的一种电子元件，根据材料的不同，目前所使用的电容器又包括了瓷质电容器、云母电容器、有机电容器和电解电容器等等。随着目前电子产品逐渐向着轻薄化的方向发展，传统的电容器已经逐渐无法适应这种趋势。主要原因在于传统的芯片材料强度只能满足普通厚度芯片的制造需要，当应用于薄型的贴片电容时，芯片需要做到更薄，这时候强度上就无法满足其需要，容易破裂，从而造成整体产品制造的失败，影响良率。
发明内容
鉴于此，本发明提供了一种贴片安规电容芯片材料及制备方法，旨在解决现有技术中贴片电容的芯片材料无法满足轻薄化后强度要求的技术问题。
为此，一方面，本发明提供了一种贴片安规电容芯片材料，其包括以下重量百分比的组分：
进一步地，上述一种贴片安规电容芯片材料包括以下重量百分比的组分：碳酸锶42-48％；二氧化钛21-24％；碳酸钙20-22％；三氧化二铋5.5-6.5％；填料3.5-4.5％。
进一步地，上述一种贴片安规电容芯片材料包括以下重量百分比的组分：碳酸锶44-48％；二氧化钛23-24％；碳酸钙20-21％；三氧化二铋5.5-6％；填料3.5-4％。
进一步地，上述一种贴片安规电容芯片材料包括以下重量百分比的组分：碳酸锶46.75％；二氧化钛23.38％；碳酸钙20.6％；三氧化二铋5.74％；填料3.53％。
另一方面，本发明提供了一种贴片安规电容芯片材料的制备方法，其包括以下步骤：
1)根据上述的配比进行拌料，形成制备原料；
2)将制备原料输入到成型装置进行成型，形成坯料；
3)将坯料进行烧制，并进行冷却；
4)完成制备。
进一步地，上述步骤3)中，通过多段式烧制装置进行烧制，多段式烧制装置内设置有多个温度由高至低排布的温度区，坯料通过输送装置在烧制装置内一边移动一边烧制并冷却。
进一步地，上述多个温度区中，最高温为900-1100℃，最低温为20-30℃。
本发明所提供的一种贴片安规电容芯片材料及制备方法，通过所述的配比及制备方法，使得所获得的芯片的强度和K值都获得提高，使得芯片可以适应小型化、轻薄化的制造需要，从而有效地解决现有技术中贴片电容的芯片材料无法满足轻薄化后强度要求的技术问题。
具体实施方式
下面将更详细地描述本公开的示例性实施例。虽然显示了本公开的示例性实施例，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
以下为本发明实施例提供的一种贴片安规电容芯片材料及制备方法，该材料及制备方法具体可以用于制造芯片的基底。该贴片安规电容芯片材料通过以下配比获得，各成分皆为粉状或粒状形式，总重量以500KG计。
实验数据结果表：
(介电常数K＝14.4(C*h/D2)
实验条件参照现有技术中已有的针对贴片安规电容芯片的测定条件进行，例如国家标准、行业标准中所述的，在此不再赘述。其中，填料可以采用现有技术中化学工程中常用的填料即可，其在后续烧制时会挥发掉。
根据上述实施例可以看到，本发明所提供的一种贴片安规电容芯片材料，通过所述的配比及制备方法，相较于现有技术，使得所获得的芯片的强度(耐受电压提高)和K值都获得提高，使得芯片可以适应小型化、轻薄化的制造需要，从而有效地解决现有技术中贴片电容的芯片材料无法满足轻薄化后强度要求的技术问题。
该贴片安规电容芯片材料通过以下制备方法制得，该方法包括以下步骤：
1)根据上述的配比进行拌料，形成制备原料；
2)将制备原料输入到成型装置进行成型，形成坯料；
3)将坯料进行烧制，并进行冷却；
4)完成制备。
其中，成型装置可以采用挤出机等已知的成型设备，烧制可以采用现有的焖烧炉等烧制设备。
为了使得烧制更为均匀，减少表面气泡的发生，并且在高效率的情况下形成快速的烧制和冷却作用，上述步骤3)中，通过多段式烧制装置进行烧制，多段式烧制装置内设置有多个温度由高至低排布的温度区，坯料通过输送装置在烧制装置内一边移动一边烧制并冷却。其中，多个温度区中，最高温为900-1100℃之间的任意温度(优选地为1000℃)，最低温为20-30℃之间的任意温度(优选地为25℃)。并且，可以以200℃的温差进行递减。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。
Claims (7)
1.一种贴片安规电容芯片材料，其特征在于，包括以下重量百分比的组分：
2.根据权利要求1所述的一种贴片安规电容芯片材料，其特征在于，包括以下重量百分比的组分：碳酸锶42-48％；二氧化钛21-24％；碳酸钙20-22％；三氧化二铋5.5-6.5％；填料3.5-4.5％。
3.根据权利要求2所述的一种贴片安规电容芯片材料，其特征在于，包括以下重量百分比的组分：碳酸锶44-48％；二氧化钛23-24％；碳酸钙20-21％；三氧化二铋5.5-6％；填料3.5-4％。
4.根据权利要求3所述的一种贴片安规电容芯片材料，其特征在于，包括以下重量百分比的组分：碳酸锶46.75％；二氧化钛23.38％；碳酸钙20.6％；三氧化二铋5.74％；填料3.53％。
5.一种贴片安规电容芯片材料的制备方法，其特征在于，包括以下步骤：
1)根据权利要求1-4任一所述的配比进行拌料，形成制备原料；
2)将所述制备原料输入到成型装置进行成型，形成坯料；
3)将所述坯料进行烧制，并进行冷却；
4)完成制备。
6.根据权利要求5所述的一种贴片安规电容芯片材料的制备方法，其特征在于，所述步骤3)中，通过多段式烧制装置进行烧制，所述多段式烧制装置内设置有多个温度由高至低排布的温度区，所述坯料通过输送装置在所述烧制装置内一边移动一边烧制并冷却。
7.根据权利要求6所述的一种贴片安规电容芯片材料的制备方法，其特征在于，所述多个温度区中，最高温为900-1100℃，最低温为20-30℃。
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| CN1504436A (zh) * | 2002-12-03 | 2004-06-16 | ������������ʽ���� | 介电陶瓷及陶瓷电子部件 |
| CN1530975A (zh) * | 2003-03-12 | 2004-09-22 | 厦门量子星科技有限公司 | 一种可用于消除高电压线路中高频电磁干扰的电容及滤波器组件 |
| CN101074163A (zh) * | 2007-06-29 | 2007-11-21 | 颜欢 | 一种钛酸锶系无铅陶瓷电容材料 |
| CN102030528A (zh) * | 2009-09-29 | 2011-04-27 | 无锡隆傲电子有限公司 | 一种高温度稳定性的介电陶瓷材料及其制备方法 |
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| CN103172364A (zh) * | 2011-12-22 | 2013-06-26 | 深圳市大富科技股份有限公司 | 一种微波介质陶瓷材料的制备方法 |
| CN102584214A (zh) * | 2012-02-14 | 2012-07-18 | 郴州功田电子陶瓷技术有限公司 | 一种小型精密天线用环保型微波介质陶瓷材料 |
| CN104058750A (zh) * | 2013-03-19 | 2014-09-24 | 河北联合大学 | 高储能密度bst基铁电陶瓷的制备技术 |
| CN104086173A (zh) * | 2014-07-22 | 2014-10-08 | 苏州羽帆新材料科技有限公司 | 一种超稳定级精细陶瓷材料及其制备方法 |
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