CN108059462B - 一种新型多孔发热陶瓷的制备工艺 - Google Patents

一种新型多孔发热陶瓷的制备工艺 Download PDF

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CN108059462B
CN108059462B CN201711397392.XA CN201711397392A CN108059462B CN 108059462 B CN108059462 B CN 108059462B CN 201711397392 A CN201711397392 A CN 201711397392A CN 108059462 B CN108059462 B CN 108059462B
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丁毅
程宏生
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Shenzhen ALD Technology Co Ltd
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Abstract

本发明公开了一种新型多孔发热陶瓷的制备工艺，涉及陶瓷发热体制备技术领域；该制备工艺包括步骤：A、混料；B、干燥；C、球磨；D、过筛；E、成型；F、烧结；G、接电极；该制备工艺的有益效果是：该制备工艺将碳纤维材料和陶瓷材料一体烧结制得多孔发热陶瓷，使得多孔发热陶瓷不仅具有吸收和储存液体的功能，而且本身具有发热的功能；多孔发热陶瓷整体发热，使得吸收的液体更容易吸热而雾化。

Description

一种新型多孔发热陶瓷的制备工艺
技术领域
本发明涉及陶瓷发热体制备技术领域，更具体的说，本发明涉及一种新型多孔发热陶瓷的制备工艺。
背景技术
现阶段的多孔陶瓷发热技术，是将发热丝缠绕在多孔陶瓷的表面上，发热丝的作用是将电能转化为热能，多孔陶瓷的作用是吸附液体，液体吸收热量从而雾化。由于发热部位只局限于多孔陶瓷的表面，所以只有位于多孔陶瓷和发热丝接触面的地方的液体才能高效率的雾化。但是多孔陶瓷内部吸附的液体吸收热量有限，无法雾化。
发明内容
为了克服现有技术的不足，本发明提供一种新型多孔发热陶瓷的制备工艺，该制备工艺所制得的多孔发热陶瓷整体发热，使得吸收的液体更容易吸热而雾化。
本发明解决其技术问题所采用的技术方案是：一种新型多孔发热陶瓷的制备工艺，其改进之处在于：该制备工艺包括以下的步骤：
A、混料：按质量百分比称取60-80%的碳化硅粉体和20-40%的碳纤维，将碳化硅粉体和碳纤维进行混合，得到混合粉料；
B、干燥：将步骤A中制得的混合粉料置于干燥箱中进行干燥，其中干燥温度为105-120℃，干燥时间为24-48h；
C、球磨：在步骤B中经过干燥的混合粉料中将入研磨球，并放入研磨罐中进行干法球磨，干法球磨的时间为12-24h；
D、过筛：将步骤C中经过球磨的混合粉料置于500目筛网中，收集通过筛网的粉料；
E、成型：将步骤D中收集的混合粉料置于干压成型设备的模具中成型，其中干压强度为30-80MPa，干压完成后退模，形成陶瓷胚体；
F、烧结：将步骤E中制得的陶瓷胚体置于石墨干锅中，并埋入隔离粉，此后用氮气烧结炉将埋于隔离粉中的坯体在常压下进行烧结，烧结气氛为氮气，坯体烧结制得多孔加热陶瓷半成品；
G、接电极：将步骤F制得的多孔加热陶瓷半成品的两端进行表面镀镍或镀银处理，再于镀镍或镀银处理后的部位进行钎焊或锡焊引出电极，制得多孔发热陶瓷体成品。
进一步的，所述的步骤A中，按质量百分比称取70%的碳化硅粉体和30%的碳纤维。
进一步的，所述的步骤B中，干燥温度为110℃，干燥时间为36h。
进一步的，所述的步骤C中，干法球磨的时间为18h。
进一步的，所述的步骤E中，所述的干压强度为60 MPa。
进一步的，所述的步骤F中，烧结时的升温速率为1-10℃/min，烧结温度为1500-2100℃，烧结时间为3-9h。
进一步的，烧结时的升温速率为5℃/min，烧结温度为1700-1900℃，烧结时间为6h。
本发明的有益效果是：该制备工艺将碳纤维材料和陶瓷材料一体烧结制得多孔发热陶瓷，使得多孔发热陶瓷不仅具有吸收和储存液体的功能，而且本身具有发热的功能；多孔发热陶瓷整体发热，使得吸收的液体更容易吸热而雾化。
附图说明
图1为本发明的一种新型多孔发热陶瓷的制备工艺的工艺流程图。
具体实施方式
下面结合附图和实施例对本发明进一步说明。
以下将结合实施例和附图对本发明的构思、具体结构及产生的技术效果进行清楚、完整地描述，以充分地理解本发明的目的、特征和效果。显然，所描述的实施例只是本发明的一部分实施例，而不是全部实施例，基于本发明的实施例，本领域的技术人员在不付出创造性劳动的前提下所获得的其他实施例，均属于本发明保护的范围。另外，专利中涉及到的所有联接/连接关系，并非单指构件直接相接，而是指可根据具体实施情况，通过添加或减少联接辅件，来组成更优的联接结构。本发明创造中的各个技术特征，在不互相矛盾冲突的前提下可以交互组合。
实施例1
参照图1所示，本发明揭示了一种新型多孔发热陶瓷的制备工艺，具体的，该制备工艺包括以下的步骤：
A、混料：按质量百分比称取70%的碳化硅粉体和30%的碳纤维，将碳化硅粉体和碳纤维进行混合，得到混合粉料；
B、干燥：将步骤A中制得的混合粉料置于干燥箱中进行干燥，其中干燥温度为110℃，干燥时间为36h；
C、球磨：在步骤B中经过干燥的混合粉料中将入研磨球，并放入研磨罐中进行干法球磨，干法球磨的时间为18h；
D、过筛：将步骤C中经过球磨的混合粉料置于500目筛网中，收集通过筛网的粉料；
E、成型：将步骤D中收集的混合粉料置于干压成型设备的模具中成型，其中干压强度为60MPa，干压完成后退模，形成陶瓷胚体；
F、烧结：将步骤E中制得的陶瓷胚体置于石墨干锅中，并埋入隔离粉，此后用氮气烧结炉将埋于隔离粉中的坯体在常压下进行烧结，烧结气氛为氮气，坯体烧结制得多孔加热陶瓷半成品；烧结时的升温速率为5℃/min，烧结温度为1700℃，烧结时间为6h；
G、接电极：将步骤F制得的多孔加热陶瓷半成品的两端进行表面镀镍或镀银处理，再于镀镍或镀银处理后的部位进行钎焊或锡焊引出电极，制得多孔发热陶瓷体成品。
实施例2
参照图1所示，本发明揭示了一种新型多孔发热陶瓷的制备工艺，具体的，该制备工艺包括以下的步骤：
A、混料：按质量百分比称取60%的碳化硅粉体和40%的碳纤维，将碳化硅粉体和碳纤维进行混合，得到混合粉料；
B、干燥：将步骤A中制得的混合粉料置于干燥箱中进行干燥，其中干燥温度为105℃，干燥时间为24h；
C、球磨：在步骤B中经过干燥的混合粉料中将入研磨球，并放入研磨罐中进行干法球磨，干法球磨的时间为12h；
D、过筛：将步骤C中经过球磨的混合粉料置于500目筛网中，收集通过筛网的粉料；
E、成型：将步骤D中收集的混合粉料置于干压成型设备的模具中成型，其中干压强度为30MPa，干压完成后退模，形成陶瓷胚体；
F、烧结：将步骤E中制得的陶瓷胚体置于石墨干锅中，并埋入隔离粉，此后用氮气烧结炉将埋于隔离粉中的坯体在常压下进行烧结，烧结气氛为氮气，坯体烧结制得多孔加热陶瓷半成品；烧结时的升温速率为1℃/min，烧结温度为1500℃，烧结时间为3h；
G、接电极：将步骤F制得的多孔加热陶瓷半成品的两端进行表面镀镍或镀银处理，再于镀镍或镀银处理后的部位进行钎焊或锡焊引出电极，制得多孔发热陶瓷体成品。
实施例3
参照图1所示，本发明揭示了一种新型多孔发热陶瓷的制备工艺，具体的，该制备工艺包括以下的步骤：
A、混料：按质量百分比称取80%的碳化硅粉体和20%的碳纤维，将碳化硅粉体和碳纤维进行混合，得到混合粉料；
B、干燥：将步骤A中制得的混合粉料置于干燥箱中进行干燥，其中干燥温度为120℃，干燥时间为48h；
C、球磨：在步骤B中经过干燥的混合粉料中将入研磨球，并放入研磨罐中进行干法球磨，干法球磨的时间为24h；
D、过筛：将步骤C中经过球磨的混合粉料置于500目筛网中，收集通过筛网的粉料；
E、成型：将步骤D中收集的混合粉料置于干压成型设备的模具中成型，其中干压强度为80MPa，干压完成后退模，形成陶瓷胚体；
F、烧结：将步骤E中制得的陶瓷胚体置于石墨干锅中，并埋入隔离粉，此后用氮气烧结炉将埋于隔离粉中的坯体在常压下进行烧结，烧结气氛为氮气，坯体烧结制得多孔加热陶瓷半成品；烧结时的升温速率为10℃/min，烧结温度为2100℃，烧结时间为9h；
G、接电极：将步骤F制得的多孔加热陶瓷半成品的两端进行表面镀镍或镀银处理，再于镀镍或镀银处理后的部位进行钎焊或锡焊引出电极，制得多孔发热陶瓷体成品。
通过上述的实施例，本发明提供了一种新型多孔发热陶瓷的制备工艺，该制备工艺将碳纤维材料和陶瓷材料一体烧结制得多孔发热陶瓷，使得多孔发热陶瓷不仅具有吸收和储存液体的功能，而且本身具有发热的功能；多孔发热陶瓷整体发热，使得吸收的液体更容易吸热而雾化。其中陶瓷材料可以为碳化硅、碳化钛、碳化硼、氮化硅、氮化铝、氮化硼、氮化钛中的至少一种粉料。成型过程中，多孔发热陶瓷的形状为圆柱、中空圆柱、一端封闭的中空圆柱、片状中的至少一种。
以上是对本发明的较佳实施进行了具体说明，但本发明创造并不限于所述实施例，熟悉本领域的技术人员在不违背本发明精神的前提下还可做出种种的等同变形或替换，这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (7)

1.一种新型多孔发热陶瓷的制备工艺，其特征在于：该制备工艺包括以下的步骤：
A、混料：按质量百分比称取60-80%的碳化硅粉体和20-40%的碳纤维，将碳化硅粉体和碳纤维进行混合，得到混合粉料；
B、干燥：将步骤A中制得的混合粉料置于干燥箱中进行干燥，其中干燥温度为105-120℃，干燥时间为24-48h；
C、球磨：在步骤B中经过干燥的混合粉料中将入研磨球，并放入研磨罐中进行干法球磨，干法球磨的时间为12-24h；
D、过筛：将步骤C中经过球磨的混合粉料置于500目筛网中，收集通过筛网的粉料；
E、成型：将步骤D中收集的混合粉料置于干压成型设备的模具中成型，其中干压强度为30-80MPa，干压完成后退模，形成陶瓷胚体；
F、烧结：将步骤E中制得的陶瓷胚体置于石墨坩埚 中，并埋入隔离粉，此后用氮气烧结炉将埋于隔离粉中的坯体在常压下进行烧结，烧结气氛为氮气，坯体烧结制得多孔加热陶瓷半成品；
G、接电极：将步骤F制得的多孔加热陶瓷半成品的两端进行表面镀镍或镀银处理，再于镀镍或镀银处理后的部位进行钎焊或锡焊引出电极，制得多孔发热陶瓷体成品。
2.根据权利要求1所述的一种新型多孔发热陶瓷的制备工艺，其特征在于：所述的步骤A中，按质量百分比称取70%的碳化硅粉体和30%的碳纤维。
3.根据权利要求1所述的一种新型多孔发热陶瓷的制备工艺，其特征在于：所述的步骤B中，干燥温度为110℃，干燥时间为36h。
4.根据权利要求1所述的一种新型多孔发热陶瓷的制备工艺，其特征在于：所述的步骤C中，干法球磨的时间为18h。
5.根据权利要求1所述的一种新型多孔发热陶瓷的制备工艺，其特征在于：所述的步骤E中，所述的干压强度为60 MPa。
6.根据权利要求1所述的一种新型多孔发热陶瓷的制备工艺，其特征在于：所述的步骤F中，烧结时的升温速率为1-10℃/min，烧结温度为1500-2100℃，烧结时间为3-9h。
7.根据权利要求6所述的一种新型多孔发热陶瓷的制备工艺，其特征在于：烧结时的升温速率为5℃/min，烧结温度为1700℃，烧结时间为6h。
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