CN108054218A - 一种复合反射膜氮化硅太阳能电池板制备方法 - Google Patents

一种复合反射膜氮化硅太阳能电池板制备方法 Download PDF

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CN108054218A
CN108054218A CN201711347630.6A CN201711347630A CN108054218A CN 108054218 A CN108054218 A CN 108054218A CN 201711347630 A CN201711347630 A CN 201711347630A CN 108054218 A CN108054218 A CN 108054218A
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王凯
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Tianjin City Wacker Amperex Technology Ltd
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Abstract

本发明公开一种复合反射膜氮化硅太阳能电池板制备方法，属于太阳能电池技术领域，具体包括以下步骤：制绒；热扩散制备；去PSG；氢化非晶硅层制备；在非晶硅层上放置掩膜，掩膜图形将部分氢化非晶硅层遮盖，然后沉积氮化硅，形成多孔氮化硅层，所述氢化非晶硅层、多孔氮化硅层配合形成复合减反膜；Ag背电极、Al背电场和Ag正电极的印刷和烧结。本发明利用非晶硅层优异的钝化效果和多孔氮化硅层的低反射率，及非晶硅层、多孔氮化硅层优异的光学匹配，使得太阳能电池的太阳光子利用率大大提高，载流子复合速率大大下降，从而大大提升电池的转换效率。

Description

一种复合反射膜氮化硅太阳能电池板制备方法
技术领域
本发明属于太阳能电池技术领域具体涉及一种复合反射膜氮化硅太阳能电池板制备方法。
背景技术
氮化硅太阳能电池的发展方向有两个：一是降低制造成本，比如提高单位时间的产量、降低耗材用量、降低人力成本等；二是提高转换效率，制备出高转换效率的太阳能电池。氮化硅太阳能电池效率的提升有两大方向：一是降低反射率，提高太阳光子的利用率，减少太阳光子的浪费；二是降低载流子复合速率，提高电子的收集能力。在提高太阳光子的利用率方面，RIE黑硅技术、湿法黑硅技术被不断推广；在降低载流子复合速率方面，背钝化技术、n型电池技术等发展迅速。
但是，上述提高转换效率的方案，成本高，制备流程繁琐，且同一技术很难兼顾提高太阳光子的利用率和降低载流子复合速率两大优点，效率提升空间有限。因此，如何开发一种低成本高效率的氮化硅太阳能电池制备方法成了研究者关注的重点。
发明内容
针对上述现有技术存在的问题，本发明提供一种复合反射膜氮化硅太阳能电池板制备方法，可大大提升电池的转换效率，且制造成本低。
为了实现上述目的，本发明采用的一种复合反射膜氮化硅太阳能电池板制备方法，该太阳能电池包括P型硅，所述P型硅的正面设有N+层、氢化非晶硅层，所述氢化非晶硅层设置在N+层的上表面，所述氢化非晶硅层的表面沉积有多孔氮化硅层，所述多孔氮化硅层上开有若干孔洞，所述氢化非晶硅层的表面设有Ag正电极，所述Ag正电极穿过多孔氮化硅层与氢化非晶硅层连接；所述P型硅的背面设有Al背电场、Ag背电极，所述Al背电场设置在P型硅下表面，所述Ag背电极穿过Al背电场与P型硅连接；
该太阳能电池的制备方法，具体包括以下步骤：制绒；热扩散制备p-n结；去PSG；氢化非晶硅层制备；在非晶硅层上放置掩膜，掩膜图形将部分氢化非晶硅层遮盖，然后沉积氮化硅，形成多孔氮化硅层，所述氢化非晶硅层、多孔氮化硅层配合形成复合减反膜；Ag背电极、Al背电场和Ag正电极的印刷和烧结。
所述孔洞为圆形或正方形，且所述圆形或正方形孔洞在所述氢化非晶硅层上均匀分布，孔洞的直径或边长为100-500nm。
所述多孔氮化硅层的厚度为70-85nm，折射率为2.07-2.15。
所述多孔氮化硅层采用PECVD法制备。
与现有技术相比，本发明的制备方法具有如下有益效果：氮化硅太阳能电池采用氢化非晶硅层与多孔氮化硅层配合形成复合减反膜，利用非晶硅层优异的钝化效果和多孔氮化硅层的低反射率，及非晶硅层/多孔氮化硅层优异的光学匹配，使得太阳能电池的太阳光子利用率大大提高，载流子复合速率大大下降，从而大大提升电池的转换效率。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了，下面通过实施例，对本发明进行进一步详细说明。
本发明采用的一种复合反射膜氮化硅太阳能电池板制备方法，该太阳能电池包括P型硅，所述P型硅的正面设有N+层、氢化非晶硅层，所述氢化非晶硅层设置在N+层的上表面，所述氢化非晶硅层的表面沉积有多孔氮化硅层，所述多孔氮化硅层上开有若干孔洞，所述氢化非晶硅层的表面设有Ag正电极，所述Ag正电极穿过多孔氮化硅层与氢化非晶硅层连接；所述P型硅的背面设有Al背电场、Ag背电极，所述Al背电场设置在P型硅下表面，所述Ag背电极穿过Al背电场与P型硅连接；
该太阳能电池的制备方法，具体包括以下步骤：制绒；热扩散制备p-n结；去PSG；氢化非晶硅层制备；在非晶硅层上放置掩膜，掩膜图形将部分氢化非晶硅层遮盖，然后沉积氮化硅，形成多孔氮化硅层，所述氢化非晶硅层、多孔氮化硅层配合形成复合减反膜；Ag背电极、Al背电场和Ag正电极的印刷和烧结。
所述孔洞为圆形或正方形，且所述圆形或正方形孔洞在所述氢化非晶硅层上均匀分布，孔洞的直径或边长为100-500nm。
所述多孔氮化硅层的厚度为70-85nm，折射率为2.07-2.15。
所述多孔氮化硅层采用PECVD法制备。
本发明专利的氮化硅太阳能电池采用氢化非晶硅层与多孔氮化硅层配合形成复合减反膜，利用非晶硅层优异的钝化效果和多孔氮化硅层的低反射率，及非晶硅层/多孔氮化硅层优异的光学匹配，使得太阳能电池的太阳光子利用率大大提高，载流子复合速率大大下降，从而大大提升电池的转换效率。
以上所述，仅是本发明专利的较佳实施例而已，并非对本发明专利作任何形式上的限制，虽然本发明专利已以较佳实施例揭露根据上，然而并非用以限定本发明专利，任何熟悉本专业的技术人员，在不脱离本发明专利技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明专利技术方案的内容，依据本发明专利的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明专利技术方案的范围内。

Claims (5)

1.一种复合反射膜氮化硅太阳能电池板制备方法，其特征在于，该太阳能电池包括P型硅，所述P型硅的正面设有N+层、氢化非晶硅层，所述氢化非晶硅层设置在N+层的上表面，所述氢化非晶硅层的表面沉积有多孔氮化硅层，所述多孔氮化硅层上开有若干孔洞，所述氢化非晶硅层的表面设有Ag正电极，所述Ag正电极穿过多孔氮化硅层与氢化非晶硅层连接；所述P型硅的背面设有Al背电场、Ag背电极，所述Al背电场设置在P型硅下表面，所述Ag背电极穿过Al背电场与P型硅连接。
2.根据权利要求1所述的一种复合反射膜氮化硅太阳能电池板制备方法，其特征在于，该太阳能电池的制备方法，具体包括以下步骤：制绒；热扩散制备p-n结；去PSG；氢化非晶硅层制备；在非晶硅层上放置掩膜，掩膜图形将部分氢化非晶硅层遮盖，然后沉积氮化硅，形成多孔氮化硅层，所述氢化非晶硅层、多孔氮化硅层配合形成复合减反膜；Ag背电极、Al背电场和Ag正电极的印刷和烧结。
3.根据权利要求1所述的一种复合反射膜氮化硅太阳能电池板制备方法，其特征在于，所述孔洞为圆形或正方形，且所述圆形或正方形孔洞在所述氢化非晶硅层上均匀分布，孔洞的直径或边长为100-500nm。
4.根据权利要求1所述的一种复合反射膜氮化硅太阳能电池板制备方法，其特征在于，所述多孔氮化硅层的厚度为70-85nm，折射率为2.07-2.15。
5.根据权利要求1所述的一种复合反射膜氮化硅太阳能电池板制备方法，其特征在于，所述多孔氮化硅层采用PECVD法制备。
CN201711347630.6A 2017-12-16 2017-12-16 一种复合反射膜氮化硅太阳能电池板制备方法 Pending CN108054218A (zh)

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Publication number Priority date Publication date Assignee Title
CN102097497A (zh) * 2010-12-27 2011-06-15 重庆大学 一种高转换效率的太阳能电池
CN103022191A (zh) * 2012-09-14 2013-04-03 泉耀新材料科技（苏州）有限公司 一种多孔性结构低折射率二氧化钛减反射镀膜之光伏玻璃
CN103762248A (zh) * 2014-01-23 2014-04-30 中国科学院半导体研究所 具有减反射膜的太阳能电池元件及其制备方法
CN105977313A (zh) * 2016-07-12 2016-09-28 广东爱康太阳能科技有限公司 一种复合减反膜晶体硅太阳能电池的制备方法
CN106206759A (zh) * 2016-08-31 2016-12-07 天津蓝天太阳科技有限公司 一种太阳电池高透过率减反射膜的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097497A (zh) * 2010-12-27 2011-06-15 重庆大学 一种高转换效率的太阳能电池
CN103022191A (zh) * 2012-09-14 2013-04-03 泉耀新材料科技（苏州）有限公司 一种多孔性结构低折射率二氧化钛减反射镀膜之光伏玻璃
CN103762248A (zh) * 2014-01-23 2014-04-30 中国科学院半导体研究所 具有减反射膜的太阳能电池元件及其制备方法
CN105977313A (zh) * 2016-07-12 2016-09-28 广东爱康太阳能科技有限公司 一种复合减反膜晶体硅太阳能电池的制备方法
CN106206759A (zh) * 2016-08-31 2016-12-07 天津蓝天太阳科技有限公司 一种太阳电池高透过率减反射膜的制备方法

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Application publication date: 20180518