CN108054197B - 快恢复Pin二极管及其制作方法 - Google Patents
快恢复Pin二极管及其制作方法 Download PDFInfo
- Publication number
- CN108054197B CN108054197B CN201711314373.6A CN201711314373A CN108054197B CN 108054197 B CN108054197 B CN 108054197B CN 201711314373 A CN201711314373 A CN 201711314373A CN 108054197 B CN108054197 B CN 108054197B
- Authority
- CN
- China
- Prior art keywords
- type
- photoresist
- implantation
- region
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000002347 injection Methods 0.000 claims abstract description 36
- 239000007924 injection Substances 0.000 claims abstract description 36
- 238000002513 implantation Methods 0.000 claims description 48
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 238000005468 ion implantation Methods 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 16
- 239000000395 magnesium oxide Substances 0.000 claims description 16
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000036211 photosensitivity Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711314373.6A CN108054197B (zh) | 2017-12-12 | 2017-12-12 | 快恢复Pin二极管及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711314373.6A CN108054197B (zh) | 2017-12-12 | 2017-12-12 | 快恢复Pin二极管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108054197A CN108054197A (zh) | 2018-05-18 |
CN108054197B true CN108054197B (zh) | 2020-12-22 |
Family
ID=62123644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711314373.6A Active CN108054197B (zh) | 2017-12-12 | 2017-12-12 | 快恢复Pin二极管及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108054197B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111192916B (zh) * | 2019-05-31 | 2023-06-09 | 深圳方正微电子有限公司 | 超势垒功率器件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1172351A (zh) * | 1997-06-13 | 1998-02-04 | 清华大学 | 大功率快速软恢复二极管siod管芯结构 |
WO2011024214A1 (ja) * | 2009-08-25 | 2011-03-03 | パナソニック株式会社 | 高速回復ダイオード |
CN107346734A (zh) * | 2016-05-05 | 2017-11-14 | 北大方正集团有限公司 | 二极管的制备方法和二极管 |
CN107359117A (zh) * | 2017-07-13 | 2017-11-17 | 深圳市金誉半导体有限公司 | 高压快恢复pin二极管及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0737895A (ja) * | 1993-07-20 | 1995-02-07 | Toyota Autom Loom Works Ltd | 半導体装置およびその製造方法 |
-
2017
- 2017-12-12 CN CN201711314373.6A patent/CN108054197B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1172351A (zh) * | 1997-06-13 | 1998-02-04 | 清华大学 | 大功率快速软恢复二极管siod管芯结构 |
WO2011024214A1 (ja) * | 2009-08-25 | 2011-03-03 | パナソニック株式会社 | 高速回復ダイオード |
CN107346734A (zh) * | 2016-05-05 | 2017-11-14 | 北大方正集团有限公司 | 二极管的制备方法和二极管 |
CN107359117A (zh) * | 2017-07-13 | 2017-11-17 | 深圳市金誉半导体有限公司 | 高压快恢复pin二极管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108054197A (zh) | 2018-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8384186B2 (en) | Power semiconductor device with new guard ring termination design and method for producing same | |
JP5381420B2 (ja) | 半導体装置 | |
US20130140584A1 (en) | Semiconductor device | |
US8829519B2 (en) | Semiconductor device | |
US20120228634A1 (en) | Combined semiconductor device | |
WO2017081935A1 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
US20180240906A1 (en) | Switching element and method of manufacturing the same | |
KR20130118306A (ko) | 바이폴라 넌-펀치-쓰루 전력 반도체 디바이스 | |
US20170352722A1 (en) | Semiconductor rectifier and manufacturing method thereof | |
US20140117406A1 (en) | Reverse blocking mos semiconductor device and manufacturing method thereof | |
WO2016147352A1 (ja) | 電力用半導体装置 | |
JP2023110082A (ja) | 高電流能力を有するフィーダ設計 | |
CN107359117B (zh) | 高压快恢复pin二极管及其制造方法 | |
JP2003152198A (ja) | 半導体装置およびその製造方法 | |
CN108054197B (zh) | 快恢复Pin二极管及其制作方法 | |
CN114512402A (zh) | 一种沟槽型碳化硅肖特基二极管及其制作方法 | |
US10181512B2 (en) | JFET and method for fabricating the same | |
CN106298774A (zh) | 一种mps二极管及其制造方法 | |
JP2008263217A (ja) | 半導体装置 | |
JP2014138137A (ja) | 炭化珪素半導体装置及びその製造方法 | |
CN115483104A (zh) | 一种变容二极管的制作方法 | |
CN107579120B (zh) | 功率二极管的制备方法和功率二极管 | |
KR20090113964A (ko) | 고전압 쇼트키장벽 다이오드의 제조방법 | |
US8969959B2 (en) | Semiconductor device and method of manufacturing the same | |
KR101667669B1 (ko) | 쇼트키 배리어 다이오드 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201127 Address after: 314000 88 Zhengyang West Road, tanker town, Xiuzhou District, Jiaxing, Zhejiang Applicant after: Chaoyi Technology Co.,Ltd. Address before: 518000 Electronic Commerce Incubation Base of Tenglong Road Gold Rush, Longhua Street, Longhua New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Meliao Technology Transfer Center Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Fast recovery PIN diode and its manufacturing method Effective date of registration: 20220111 Granted publication date: 20201222 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing branch Pledgor: Chaoyi Technology Co.,Ltd. Registration number: Y2022980000306 |