CN108054155A - 用于三维集成电路封装的硅通孔转接板 - Google Patents
用于三维集成电路封装的硅通孔转接板 Download PDFInfo
- Publication number
- CN108054155A CN108054155A CN201711350794.4A CN201711350794A CN108054155A CN 108054155 A CN108054155 A CN 108054155A CN 201711350794 A CN201711350794 A CN 201711350794A CN 108054155 A CN108054155 A CN 108054155A
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- CN
- China
- Prior art keywords
- substrates
- oxide
- semiconductor
- tsv
- metal
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Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000005538 encapsulation Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000010949 copper Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000012856 packing Methods 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 64
- 239000010410 layer Substances 0.000 description 31
- 238000001259 photo etching Methods 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000003292 glue Substances 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711350794.4A CN108054155B (zh) | 2017-12-15 | 2017-12-15 | 用于三维集成电路封装的硅通孔转接板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711350794.4A CN108054155B (zh) | 2017-12-15 | 2017-12-15 | 用于三维集成电路封装的硅通孔转接板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108054155A true CN108054155A (zh) | 2018-05-18 |
CN108054155B CN108054155B (zh) | 2020-05-05 |
Family
ID=62133115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711350794.4A Active CN108054155B (zh) | 2017-12-15 | 2017-12-15 | 用于三维集成电路封装的硅通孔转接板 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108054155B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112542444A (zh) * | 2020-12-03 | 2021-03-23 | 武汉新芯集成电路制造有限公司 | 半导体器件 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1841651A (zh) * | 2005-03-29 | 2006-10-04 | 三洋电机株式会社 | 半导体装置的制造方法 |
US20120175731A1 (en) * | 2011-01-07 | 2012-07-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor structure with passive element network and manufacturing method thereof |
US20120329277A1 (en) * | 2009-03-05 | 2012-12-27 | International Business Machines Corporation | Two-sided semiconductor structure |
CN103109368A (zh) * | 2010-09-24 | 2013-05-15 | 超威半导体公司 | 具有加强硅穿孔的半导体芯片 |
US20140299963A1 (en) * | 2011-12-09 | 2014-10-09 | Ipdia | Interposer device |
US20140319672A1 (en) * | 2011-10-28 | 2014-10-30 | Kyocera Corporation | Flow channel member, heat exchanger using same, semiconductor device, and device for manufacturing semiconductor |
CN105226048A (zh) * | 2015-10-14 | 2016-01-06 | 西安理工大学 | 一种三维集成电感器及其制造方法 |
CN208385399U (zh) * | 2017-12-15 | 2019-01-15 | 江苏天康电子合成材料有限公司 | 用于三维集成电路封装的硅通孔转接板 |
-
2017
- 2017-12-15 CN CN201711350794.4A patent/CN108054155B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1841651A (zh) * | 2005-03-29 | 2006-10-04 | 三洋电机株式会社 | 半导体装置的制造方法 |
US20120329277A1 (en) * | 2009-03-05 | 2012-12-27 | International Business Machines Corporation | Two-sided semiconductor structure |
CN103109368A (zh) * | 2010-09-24 | 2013-05-15 | 超威半导体公司 | 具有加强硅穿孔的半导体芯片 |
US20120175731A1 (en) * | 2011-01-07 | 2012-07-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor structure with passive element network and manufacturing method thereof |
US20140319672A1 (en) * | 2011-10-28 | 2014-10-30 | Kyocera Corporation | Flow channel member, heat exchanger using same, semiconductor device, and device for manufacturing semiconductor |
US20140299963A1 (en) * | 2011-12-09 | 2014-10-09 | Ipdia | Interposer device |
CN105226048A (zh) * | 2015-10-14 | 2016-01-06 | 西安理工大学 | 一种三维集成电感器及其制造方法 |
CN208385399U (zh) * | 2017-12-15 | 2019-01-15 | 江苏天康电子合成材料有限公司 | 用于三维集成电路封装的硅通孔转接板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112542444A (zh) * | 2020-12-03 | 2021-03-23 | 武汉新芯集成电路制造有限公司 | 半导体器件 |
Also Published As
Publication number | Publication date |
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CN108054155B (zh) | 2020-05-05 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Cai Jingbo Inventor after: Cheng Zichuang Inventor after: Zhang Liang Inventor before: Zhang Liang |
|
CB03 | Change of inventor or designer information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200409 Address after: No.7, Beiyuan Middle Road, Nanhai Economic Development Zone, Foshan City, Guangdong Province Applicant after: Foshan golden way Electronic Technology Co., Ltd. Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province Applicant before: XI'AN CREATION KEJI Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |