CN108022672A - Paste composition - Google Patents
Paste composition Download PDFInfo
- Publication number
- CN108022672A CN108022672A CN201711057979.6A CN201711057979A CN108022672A CN 108022672 A CN108022672 A CN 108022672A CN 201711057979 A CN201711057979 A CN 201711057979A CN 108022672 A CN108022672 A CN 108022672A
- Authority
- CN
- China
- Prior art keywords
- paste composition
- size distribution
- distribution curve
- aluminium
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 80
- 239000002245 particle Substances 0.000 claims abstract description 110
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000013528 metallic particle Substances 0.000 claims abstract description 34
- 238000009826 distribution Methods 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 23
- 238000000790 scattering method Methods 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 35
- 229910052796 boron Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 229910000632 Alusil Inorganic materials 0.000 abstract 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 23
- -1 tackifier Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000004411 aluminium Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229950007687 macrogol ester Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- BSPSZRDIBCCYNN-UHFFFAOYSA-N phosphanylidynetin Chemical compound [Sn]#P BSPSZRDIBCCYNN-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- 150000003681 vanadium Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical class [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of paste composition, it can form the electrode that high conversion efficiency and high short-circuit current value are brought to solar battery cells such as PERC type solar battery cells.The paste composition at least contains at least one of alumina particles and alusil alloy particle metallic particles, glass powder and organic vehicle, in the size distribution curve of the volume reference measured by laser diffraction scattering method, the minimum grain size Dmin of metallic particles is less than more than 1.5 μm 2.0 μm, in size distribution curve, it it is less than more than 4.0 μm 8.0 μm corresponding to 50% point of median (D50), the value for the D that formula (1) represents is more than 0.7, in D=D50/ (D90 D10) (1) formulas (1), D50 is median, D90 is the particle diameter corresponding to 90% point in size distribution curve, D10 is the particle diameter corresponding to 10% point in size distribution curve.
Description
Technical field
The present invention relates to a kind of paste composition.
Background technology
In recent years, to improve the transfer efficiency of crystal class solar battery cell (generating efficiency) and reliability etc. as mesh
, carry out various research and development.As one of them, PERC (passivation emitter and back side battery, Passivated
Emitter and rear cell) type high conversion efficiency unit attracted attention.PERC type high conversion efficiency units are for example with tool
The standby structure using aluminium as the electrode of main component.It is known by being suitably designed to the composition of the electrode layer, it is possible to increase
The transfer efficiency of PER c-type high conversion efficiency units.For example, one kind is disclosed in patent document 1 contains frit (glass
Frit aluminum paste composition), the frit by 30-70mol% Pb2+, 1-40mol% Si4+, 10-65mol% B3+、
The Al of 1-25mol%3+Form.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2013-145865 publications
The content of the invention
The technical problem to be solved in the present invention
However, compared with theoretical conversion efficiencies, possesses the solar energy of the electrode formed using conventional paste composition
The transfer efficiency of battery unit still suffers from the leeway of raising, does not obtain very high transfer efficiency also.Particularly using conventional
Paste composition when, also exist be difficult to obtain the technical problem of high short-circuit current value.
The present invention completes in view of the foregoing, and its purpose is to provide a kind of paste composition, it can be formed pair
The solar battery cells such as PERC type solar battery cells bring the electrode of high conversion efficiency and high short-circuit current value.
Solve the technological means of technical problem
Further investigation has been repeated in present inventor in order to achieve the above objectives, it turns out that, by that will have
The alumina particles and/or aluminium-silicon alloys particle of specific size distribution are used as necessary constituent, can reach above-mentioned purpose, from
And complete the present invention.
That is, the present invention is for example comprising the theme described in following item.
A kind of 1. paste compositions of item, it at least contains：At least one of alumina particles and aluminium-silicon alloys particle metal
Grain, glass powder and organic vehicle (vehicle),
In the size distribution curve of the volume reference measured by laser diffraction scattering method, the minimum of the metallic particles
Particle diameter Dmin is less than more than 1.5 μm 2.0 μm, in the size distribution curve, corresponding to 50% point of median (D50)
For less than more than 4.0 μm 8.0 μm, and the value of the D represented by aftermentioned formula (1) is more than 0.7,
D=D50/ (D90-D10) (1)
In formula (1), D50 is the median, and D90 is the grain corresponding to 90% point in the size distribution curve
Footpath, D10 are the particle diameter corresponding to 10% point in the size distribution curve.
2. paste composition according to item 1, wherein, the glass powder contain selected from by lead (Pb), bismuth (Bi),
The element of one or more of the group that vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P) and zinc (Zn) form.
3. paste composition according to item 1 or item 2, wherein, relative to the metallic particles of 100 mass parts,
The content of the glass powder is below mass part for more than 1 mass parts 8, and the content of the organic vehicle is more than 20 mass parts
45 is below mass part.
Invention effect
The paste composition being related to according to the present invention, can be formed can be to solar-electricities such as PERC type solar battery cells
Pool unit assigns the electrode of high conversion efficiency and high short-circuit current value.
Brief description of the drawings
Fig. 1 is the schematic diagram of an example of the cross-section structure for representing PERC type solar battery cells, and Fig. 1 (a) is it
One example of embodiment, Fig. 1 (b) are another example of embodiments thereof.
Fig. 2 is the schematic diagram of the section of the electrode structure made in embodiment and comparative example.
Description of reference numerals
1：Silicon semiconductor substrate；2：P-type impurity layer；3：Antireflection film (passivating film)；4：Grid electrode；5：Electrode layer；6：
Alloy-layer；7：P+ layers；8：Backplate；9：Contact hole；10：Paste composition.
Embodiment
Hereinafter, embodiments of the present invention are described in detail.
Paste composition of the present invention is, for example, the material for forming the electrode of solar battery cell and using.
It is not particularly limited as solar battery cell, such as PERC (Passivated emitter and rear can be included
Cell) type high conversion efficiency unit (hereinafter referred to as " PERC types solar battery cell ").Paste composition of the present invention
Such as it can be used in being formed the backplate of PERC type solar battery cells.Hereinafter, sometimes by paste group of the present invention
Compound is slightly written as " paste composition ".
First, an example of the structure of PERC type solar battery cells is illustrated.
1.PERC type solar battery cells
The schematic diagram of Fig. 1 (a), the common cross-section structure that (b) is PERC type solar battery cells.PERC type solar energy
Battery unit can have silicon semiconductor substrate 1, p-type impurity layer 2, antireflection film 3, grid electrode 4, electrode layer 5, alloy-layer 6, p+
Layer 7 is used as inscape.
The p-type silicon substrate that thickness is 180~250 μm for example can be used in silicon semiconductor substrate 1.
P-type impurity layer 2 is arranged at the light receiving side of silicon semiconductor substrate 1.The thickness of p-type impurity layer 2 is, for example, 0.3~
0.6μm。
Antireflection film 3 and grid electrode 4 are arranged on the surface of p-type impurity layer 2.Antireflection film 3 is for example by silicon nitride film
Formed, also referred to as passivating film.Antireflection film 3 as so-called passivating film by playing a role, so as to suppress in silicon
Electronics on the surface of semiconductor substrate 1 in conjunction with, as a result, can reduce the carrier of generation in conjunction with rate.Thus, carry
The transfer efficiency of high PERC types solar battery cell.
Antireflection film 3 is arranged at the rear side of silicon semiconductor substrate 1, that is, is arranged at the face for opposite side with the smooth surface
On.In addition, the shape in a manner of penetrating through the antireflection film 3 of the rear side and cut the part at the back side of silicon semiconductor substrate 1
Into contact hole, be formed at the rear side of silicon semiconductor substrate 1.
Electrode layer 5 by way of 1 contact of silicon semiconductor substrate by the contact hole and with forming.Electrode layer 5 is by this
The component that the paste composition of invention is formed, it is formed as defined pattern form, as shown in the mode of Fig. 1 (a), electrode layer 5
Can to be formed in a manner of to cover the back side of PERC type solar battery cells overall, or can also with cover contact hole and its
Neighbouring mode is formed.Since the main component of electrode layer 5 is aluminium, electrode layer 5 is aluminium electrode layer.
Electrode layer 5 for example can be by forming by paste composition coating is defined pattern form.Coating method does not have
It is particularly limited to, such as method known to silk-screen printing etc. can be included.After being coated with paste composition, make its drying as needed
Afterwards, such as by the temperature progress short time with the fusing point more than aluminium of 660 DEG C of grades burn till, so as to form electrode layer 5.
If being roasted like this, contained aluminium diffuses to the inside of silicon semiconductor substrate 1 in paste composition.By
This, forms aluminium-silicon (Al-Si) alloy-layer (alloy-layer 6) between electrode layer 5 and silicon semiconductor substrate 1, at the same time, passes through
The diffusion of aluminium atom, forms the p+ layers 7 as impurity layer.
P+ layers 7 can bring prevent electronics in conjunction with, improve generation carrier collection efficiency effect, i.e., it is so-called
BSF (back surface field, Back Surface Field) effect.
The electrode formed as the electrode layer 5 and alloy-layer 6 is the backplate 8 shown in Fig. 1.Therefore, backplate 8 is
Formed, such as can be formed by being coated on the antireflection film 3 (passivating film 3) of rear side using paste composition
Backplate 8.If particularly forming backplate 8 using paste composition of the present invention, easily suppress in electrode layer 5
With generating cavity on the interface of silicon semiconductor substrate 1, good BSF effects can be brought.
2. paste composition
Then, the paste composition of present embodiment is described in detail.
Paste composition at least contains：At least one of alumina particles and aluminium-silicon alloys particle metallic particles, glass powder
And organic vehicle, in the size distribution curve of the volume reference measured by laser diffraction scattering method, the metallic particles
Minimum grain size Dmin be less than more than 1.5 μm 2.0 μm, in the size distribution curve, corresponding to 50% point of middle position grain
Footpath (D50) is less than more than 4.0 μm 8.0 μm, and the value of the D represented by aftermentioned formula (1) is more than 0.7,
D=D50/ (D90-D10) (1)
In formula (1), D50 is the median, and D90 is the grain corresponding to 90% point in the size distribution curve
Footpath, D10 are the particle diameter corresponding to 10% point in the size distribution curve.
The paste composition being related to according to the present invention, can be formed can be to solar-electricities such as PERC type solar battery cells
Pool unit assigns the electrode of high conversion efficiency and high short-circuit current value.
As described above, by using paste composition, the solar cells such as PERC type solar battery cells can be formed
The backplate of unit.That is, paste composition of the invention can be used in forming backplate used for solar batteries, back side electricity
Pole is made electrical contact with by hole possessed by the passivating film that is formed on silicon substrate with silicon substrate.
Paste composition contains at least one of alumina particles and aluminium-silicon alloys particle metallic particles as constituent.
By making paste composition contain the metallic particles, the sintered body for being burnt till and being formed to paste composition can be played and led
Electrically.
Paste composition can only using any one in alumina particles and aluminium-silicon alloys particle as constituent, or
Constituent can be used as using both alumina particles and aluminium-silicon alloys particle.
The shape of the metallic particles is not particularly limited.Such as the shape of the metallic particles can be spherical, oval
Any one shape in shape, indefinite shape, flakey, threadiness etc..If the shape of the metallic particles to be spherical, by
In the electrode layer 5 that paste composition is formed, the fillibility increase of the metallic particles, can be effectively reduced resistance.This
Outside, when the shape of the metallic particles is spherical, in the electrode layer 5 formed by paste composition, silicon semiconductor base
The contact increase of plate 1 and the metallic particles (alumina particles and/or aluminium-silicon alloys particle), therefore easily form good BSF
Layer.
If paste composition contains alumina particles, when forming sintered body paste composition is burnt till, partly led with silicon
The alloy-layer 6 containing aluminium-silicon alloys and p+ layers 7 are formed between structure base board 1, therefore above-mentioned BSF effects can be further improved.
On the other hand, if paste composition contains aluminium-silicon alloys particle, in aluminium-silicon alloys particle contained silicon into
Dividing can play the role of controlling the overreaction of aluminium and the silicon in silicon semiconductor substrate 1 in paste composition.Thus, easily
Suppress to generate cavity on the interface of electrode layer 5 and silicon semiconductor substrate 1.
The purity of alumina particles and aluminium-silicon alloys particle is not particularly limited, in addition, in alumina particles and aluminium-silicon alloys particle
In can also contain inevitably and by comprising metal.
As long as the alloy of aluminium-silicon alloys particle aluminium and silicon, then both ratio be not particularly limited.For example, closed in aluminium-silicon
In gold grain, in the silicon containing below 40 mass % of more than 5 mass %, the electrode layer that will can be formed by the paste composition
Resistance value it is retentively relatively low.
In the size distribution curve of the volume reference measured by laser diffraction scattering method, the minimum of the metallic particles
Particle diameter Dmin is less than more than 1.5 μm 2.0 μm.Dmin means the gold of the micro mist shape in paste composition within the range
Metal particles are few.If Dmin be less than 1.5 μm, short circuit current flow is lower, if in addition, Dmin more than 2.0 μm, open-circuit voltage reduce,
The transfer efficiency of solar battery cell is deteriorated.Dmin is particularly preferably 1.5~1.8 μm.
In the size distribution curve, the median (D50) for corresponding at 50% point of the metallic particles is 4.0 μm
Below 8.0 μm of the above.If D50 is less than 4.0 μm, the transfer efficiency of solar battery cell reduces, if D50 more than 8.0 μm,
Open-circuit voltage reduces.In addition, by making D50 be less than more than 4.0 μm 8.0 μm, it is not easy to cause the metallic particles mutual
Cohesion, and reactivity when burning till is also good, aluminium easily form alloy with silicon etc..
The value of the D of the metallic particles represented by formula (1) is more than 0.7.
D=D50/ (D90-D10) (1)
In formula (1), D50 is the median, and D90 is the grain corresponding to 90% point in the size distribution curve
Footpath, D10 are the particle diameter corresponding to 10% point in the size distribution curve.
For the value of D within the range it is meant that the ratio of micro mist and coarse powder is few, the distribution of particle diameter is small, the metallic particles tool
There is granularity evenly.If the value of D is less than 0.7, resistance is difficult to reduce, and transfer efficiency is insufficient.The upper limit of the value of D for example may be used
2.0 are set to, at this time, is not easy the reduction for causing productivity.The upper limit of the value of preferable D is 1.4.The value of D is particularly preferably 0.7~
1.0。
The size distribution curve can be by with JIS Z8825：On the basis of 2013, measured using laser diffraction scattering method
The metallic particles and obtain.Dmin refers to the value of minimum particle diameter in the size distribution curve.D50 is in the granularity
Correspond to 50% point of particle diameter in distribution curve, in other words, the aggregate-value for referring to particle diameter in the size distribution curve is 50%
When particle diameter.Identical with this, D90 refers to the particle diameter when aggregate-value is 90%, and D10 refers to when the aggregate-value is 10%
Particle diameter.
In the present invention, such as the laser diffraction and scattering formula particle diameter of Microtrac BEL Corp. manufactures can be used to divide
Cloth measurement device " Microtrac MT3000II series " obtains the size distribution curve, can measure Dmin, D10, D50
And D90.
For the metallic particles, by making these three parameters of Dmin, D50 and D that there is the specific scope, by
This, the solar battery cell for possessing the electrode layer formed by paste composition has high short circuit current flow (ISC), and electricity of opening a way
Press (VOC) also increase, excellent transfer efficiency can be shown.
Especially since paste composition controls the amount of micro mist as described above, therefore, burnt till by paste composition
When, aluminium easily forms alloy with silicon etc., is easily obtained good BSF effects, is further improved as a result, it is possible to compared with the past
The transfer efficiency of solar battery cell.Like this, the inventors of the present application found that being not affected by the paste composition attracted attention in the past
In the micro mist of the metallic particles have a significant impact to the transfer efficiency of solar battery cell, the metal in order to prevent
The fine-powder of grain is mixed into, and adjusts above-mentioned three kinds of parameters.Thereby, it is possible to improve the transfer efficiency of solar battery cell.
The contained metallic particles can also be both alumina particles and aluminium-silicon alloys particle in paste composition.This
Outside, as long as not damaging the effect of the present invention, paste composition can also contain its in addition to alumina particles and aluminium-silicon alloys particle
His metallic particles.
When paste composition contains both alumina particles and aluminium-silicon alloys particle, both mixed proportions are not special
Restriction.If for example, relative to the alumina particles of 100 mass parts, aluminium-silicon alloys particle for more than 100 mass parts 500 mass parts with
Under, then when paste composition is burnt till, the overreaction of aluminium and the silicon in silicon semiconductor substrate 1 can be more effectively controlled,
It is readily obtained excellent BSF effects.
Alumina particles and aluminium-silicon alloys particle can be manufactured by known method.
Adjusting for the value of Dmin, D50, D of alumina particles and aluminium-silicon alloys particle can also be by the grain that carries out back and forth
The control method for spending distribution carries out.Particularly, from the angle for the adjusting that can easily carry out these values, preferably pass through
Gas atomization manufactures alumina particles and aluminium-silicon alloys particle.
Think that glass powder has the reaction for helping the metallic particles and silicon and the metallic particles sintering of itself
Effect.
It is not particularly limited as glass powder, such as electrode layer for forming solar battery cell can be set to
Contained known glass ingredient in paste composition.As the concrete example of glass powder, can contain be selected from by lead (Pb),
Member more than one or both of group that bismuth (Bi), vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P) and zinc (Zn) form
Element.In addition it is possible to use flint glass powder or bismuth class, vanadium class, tin-Phosphorus, zinc borosilicate class, alkali borosilicate acids etc. are unleaded
Glass powder.Particularly, if in view of the influence to human body, preferably using unleaded glass powder..
Specifically, glass powder can contain and be selected from by B2O3、Bi2O3、ZnO、SiO2、Al2O3、BaO、CaO、SrO、V2O5、
Sb2O3、WO3、P2O5And TeO2At least one of group of composition component.For example, in glass powder, B can be combined2O3Component
With Bi2O3Molar ratio (the B of component2O3/Bi2O3) be less than more than 0.8 4.0 frit and V2O5Component rubs with BaO components
You are than (V2O5/ BaO) be less than more than 1.0 2.5 frit.
The softening point of glass powder can for example be set to less than 750 DEG C.The average grain diameter of contained particle in glass powder
Such as less than more than 1 μm 3 μm can be set to.
The content of contained glass powder in paste composition, for example, the metal relative to 100 mass parts
Grain, 40 is below mass part preferably more than 0.5 mass parts.In this case, silicon semiconductor substrate 1 and the (passivation of antireflection film 3
Film) adherence it is good, and resistance is not easy to increase.It is contained in paste composition relative to the metallic particles of 100 mass parts
It is below mass part that the content of some glass powders is particularly preferably more than 1 mass parts 8.
As organic vehicle, the material dissolved with various additives and resin in a solvent can be used as needed.Or
Person can not also contain solvent, and resin directly is used as organic vehicle.
Known species can be used in solvent, specifically, can include diethylene glycol monobutyl ether, diethylene glycol monobutyl ether second
Acid esters, dipropylene glycol monomethyl ether etc..
As various additives, for example, can be used antioxidant, preservative, defoamer, thickener, tackifier, coupling agent,
Electrostatic imparting agent, polymerization inhibitor, thixotropic agent, sagging inhibitor etc..Specifically, for example, can be used macrogol ester compound,
Polyethylene glycol ether compound, polyoxyethylene sorbitol acid anhydride ester compounds, sorbitan alkyl ester compound, aliphatic polybasic
Carboxylic acid compound, phosphate compound, amide amine (amido amine) salt, oxidic polyethylene class compound, the fat of polyester acid
Sour amide waxe etc..
As resin, known species can be used, can be combined and contracted using ethyl cellulose, nitrocellulose, polyvinyl alcohol
Butyraldehyde, phenolic resin, melmac, urea resin, xylene resin, alkyd resin, unsaturated polyester resin, acrylic acid
The heat cure tree such as resin, polyimide resin, furane resins, polyurethane resin, isocyanate compound, cyanate esters
Fat, polyethylene, polypropylene, polystyrene, ABS resin, polymethyl methacrylate, polyvinyl chloride, polyvinylidene chloride, poly- second
Vinyl acetate, polyvinyl alcohol, polyacetals, makrolon, polyethylene terephthalate, polybutylene terephthalate (PBT),
It is two or more in polyphenylene oxide, polysulfones, polyimides, polyether sulfone, polyarylate, polyether-ether-ketone, polytetrafluoroethylene (PTFE), silicones etc..
Contained resin, solvent, the ratio of various additives can arbitrarily be adjusted, such as can be set in organic vehicle
The component ratio identical with known organic vehicle.
Though organic vehicle contains than being not particularly limited, such as from the angle with good printing,
It is preferably more than 10 mass parts 500 below mass part, particularly preferably 20 matter relative to the metallic particles of 100 mass parts
It is more than amount part that 45 is below mass part.
The paste composition of the present invention is for example suitable for forming the electrode layer of solar battery cell (particularly such as Fig. 1 institutes
The backplate 8 of the PERC type solar battery cells of expression).Therefore, paste composition of the invention also is used as solar energy
Cell backside electrode forming agent.
Embodiment
By the following examples to the present invention carry out more specific description, but the present invention and from the mode of these embodiments
Limited.
(embodiment 1)
The alumina particles that are manufactured 100 mass parts by gas atomization using known dispersal device (dispersion machine), 1.5
Mass parts have B2O3-Bi2O3-SrO-BaO-Sb2O3The component of=40/40/10/5/5 (mol%) than glass powder, 35
The resin liquid (organic vehicle) that ethyl cellulose is dissolved in the butyl mixing of mass parts, has obtained paste composition
Thing.Dmin, D10, D50 and D90 of used alumina particles are as be described hereinafter shown in table 1.
(embodiment 2)
In addition to the aluminium-silicon alloys particle of Dmin, D10, D50 and D90 for being changed to alumina particles to have shown in table 1,
Paste composition has been obtained in the same manner as example 1.
(embodiment 3)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(embodiment 4)
In addition to the aluminium-silicon alloys particle of Dmin, D10, D50 and D90 for being changed to alumina particles to have shown in table 1,
Paste composition has been obtained in the same manner as example 1.
(embodiment 5)
Except the alumina particles and aluminium-silicon alloys that by alumina particles are changed to that there is Dmin, D10, D50 and D90 shown in table 1
Beyond the hybrid particles of grain, paste composition has been obtained in the same manner as example 1.In the hybrid particles, alumina particles
Mass ratio with aluminium-silicon alloys particle is 1：1.
(embodiment 6)
Except the alumina particles and aluminium-silicon alloys that by alumina particles are changed to that there is Dmin, D10, D50 and D90 shown in table 1
Beyond the hybrid particles of grain, paste composition has been obtained in the same manner as example 1.In the hybrid particles, alumina particles
Mass ratio with aluminium-silicon alloys particle is 1：1.
(comparative example 1)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(comparative example 2)
In addition to the aluminium-silicon alloys particle of Dmin, D10, D50 and D90 for being changed to alumina particles to have shown in table 1,
Paste composition has been obtained in the same manner as example 1.
(comparative example 3)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(comparative example 4)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(comparative example 5)
In addition to the aluminium-silicon alloys particle of Dmin, D10, D50 and D90 for being changed to alumina particles to have shown in table 1,
Paste composition has been obtained in the same manner as example 1.
(comparative example 6)
Except the alumina particles and aluminium-silicon alloys that by alumina particles are changed to that there is Dmin, D10, D50 and D90 shown in table 1
Beyond the hybrid particles of grain, paste composition has been obtained in the same manner as example 1.In the hybrid particles alumina particles with
The mass ratio of aluminium-silicon alloys particle is 1：1.
(comparative example 7)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(comparative example 8)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(comparative example 9)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(comparative example 10)
In addition to the alumina particles for being changed to alumina particles there is Dmin, D10, D50 and D90 shown in table 1, with implementation
The identical mode of example 1 has obtained paste composition.
(evaluation method)
Made the solar battery cell as evaluation in the manner as described below burns till substrate.First, such as Fig. 2
(A) shown in, the silicon semiconductor substrate 1 that thickness is 180 μm has been prepared.Then, as shown in Fig. 2 (B), by the YAG that wavelength is 532nm
Laser is used as laser oscillator, and the contact that diameter D is 100 μm, depth is 1 μm is formd on the surface of silicon semiconductor substrate 1
Hole 9.The resistance value of the silicon semiconductor substrate 1 is 3 Ω cm, it is passivating back type single crystals.
Then, as shown in Fig. 2 (C), in a manner of covering the back side overall (face of the side formed with contact hole 9), use
Screen process press, by obtained each paste composition 10 in the various embodiments described above and comparative example with as 1.0-1.1g/pc's
Mode is printed on the surface of silicon semiconductor substrate 1.Then, although not shown, but printed on smooth surface and passed through known technology
The Ag cream of making.Then, burnt till using the infrared band stove (red outer ベ Le ト stoves) for being set as 800 DEG C, burnt till by this,
As shown in Fig. 2 (D), electrode layer 5 is formed, and when carrying out this and burning till, aluminium diffuses to the inside of silicon semiconductor substrate 1, thus,
The alloy-layer 6 of Al-Si is formed between electrode layer 5 and silicon semiconductor substrate 1, meanwhile, formed miscellaneous as because aluminium atom is spread
Matter layer and form p+ layers of (BSF layers) 7.What system was evaluated in the above described manner burns till substrate.
Use the solar simulator (solar simulator) of WACOM ELECTRIC CO., LTD.：WXS-156S-10、
I-V measurement device IV15040-10, I-V measure has been carried out to solar battery cell obtained from through the above way.Thus,
Measure short circuit current flow (ISC) and open-circuit voltage (VOC), and calculated Fill factor (FF) and transfer efficiency Eff.Fill factor
(FF) carried out using commercially available solar simulator.
Evaluation for gap (void), uses the obtained each examination for burning till substrate of (200 times) observations of light microscope
The section of sample, observe has tight on substrate and electrode bed boundary.Observed in the field of view of light microscope more
A contact hole, ◎ is evaluated as by the situation for not forming cavity in all contact holes, by the number of the contact hole formed with cavity
20% situation less than total number is evaluated as zero, by the number of the contact hole formed with cavity for total number 20~50%
Situation is evaluated as △.
Evaluation result is shown in table 1.In addition, in table 1, contained gold in paste composition used in " Al " expression
Metal particles are alumina particles, " Al-Si " represent used in metallic particles contained in paste composition be aluminium-silicon alloys
Grain.In addition, " Al+Al-Si " refers to metallic particles for alumina particles and the hybrid particles of aluminium-silicon alloys particle.
In table 1, by with JIS Z 8825：Determination condition on the basis of 2013, uses Microtrac BEL Corp. systems
The laser diffraction and scattering formula particle size distribution analyzer " Microtrac MT3000II series " made determines Dmin, D10, D50
And D90.
[table 1]
As shown in table 1, when using the metallic particles with following size distributions, ISCIt is larger, and can realize
More than 21.4% high conversion efficiency.The size distribution is that Dmin is 1.5~2.0 μm, D50 is 4.0~8.0 μm and D
It is worth for more than 0.7.
It is resulting in embodiment has been used if the theoretical conversion efficiencies of the unit in view of specifically using are 21.5%
Paste composition when, it may be said that played excellent BSF effects.On comparative example 4,5, although ISCFor more than 9.83A, but
VOCNot up to 0.665mV.Should be for result, it may be said that its BSF effect is insufficient.
In addition, in the comparison of alumina particles and aluminium-silicon alloys particle, confirm：Although there is no big shadow to transfer efficiency
Ring, but the paste composition containing aluminium-silicon alloys particle inhibits the generation in empty (gap), and reliability is improved.
Claims (3)
1. a kind of paste composition, it at least contains：At least one of alumina particles and aluminium-silicon alloys particle metallic particles, glass
Glass powder and organic vehicle,
In the size distribution curve of the volume reference measured by laser diffraction scattering method, the minimum grain size of the metallic particles
Dmin is less than more than 1.5 μm 2.0 μm, is 4.0 μ corresponding to 50% point of median D50 in the size distribution curve
Below 8.0 μm of more than m, and the value of the D represented by aftermentioned formula (1) is more than 0.7,
D=D50/ (D90-D10) (1)
In formula (1), D50 is the median, and D90 is the particle diameter corresponding to 90% point, D10 in the size distribution curve
To correspond to 10% point of particle diameter in the size distribution curve.
2. paste composition according to claim 1, wherein, the glass powder contain selected from by lead (Pb), bismuth (Bi),
The element of one or more of the group that vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P) and zinc (Zn) form.
3. paste composition according to claim 1 or 2, wherein, relative to the metallic particles of 100 mass parts, institute
State that the content of glass powder is below mass part for more than 1 mass parts 8, the content of the organic vehicle is more than 20 mass parts 45
It is below mass part.
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| CN111969071A (en) * | 2020-08-25 | 2020-11-20 | 常州时创能源股份有限公司 | Metallization method and solar cell |
| WO2021042419A1 (en) * | 2019-09-04 | 2021-03-11 | 南通天盛新能源股份有限公司 | Paste for n-type solar cell front fine grids and preparation method therefor |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003277170A (en) * | 2002-03-26 | 2003-10-02 | Kyocera Corp | Composition for wiring conductor |
| JP2005019248A (en) * | 2003-06-26 | 2005-01-20 | Mitsubishi Paper Mills Ltd | Metal-containing paste and interlayer connection method |
| JP4178374B2 (en) * | 2002-08-08 | 2008-11-12 | 三井金属鉱業株式会社 | Silver coated flake copper powder, method for producing the silver coated flake copper powder, and conductive paste using the silver coated flake copper powder |
| JP2011052300A (en) * | 2009-09-04 | 2011-03-17 | Dowa Electronics Materials Co Ltd | Flaky silver powder, method for producing the same, and conductive paste |
| JP4660701B2 (en) * | 2004-12-03 | 2011-03-30 | Ｄｏｗａエレクトロニクス株式会社 | Silver-coated copper powder, method for producing the same, and conductive paste |
| JP4840097B2 (en) * | 2006-11-20 | 2011-12-21 | 住友ベークライト株式会社 | Conductive copper paste |
| CN104508759A (en) * | 2012-05-18 | 2015-04-08 | 材料概念有限公司 | Conductive paste, method for forming wiring, electronic component, and silicon solar cell |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4373774B2 (en) * | 2003-12-24 | 2009-11-25 | 京セラ株式会社 | Method for manufacturing solar cell element |
| JP2008004514A (en) * | 2006-05-24 | 2008-01-10 | Murata Mfg Co Ltd | Conductive paste, and manufacturing method of ceramic multilayer board using it |
| KR20090053667A (en) * | 2007-11-22 | 2009-05-27 | 제일모직주식회사 | Composition for fabricating the electrode comprising aluminium powder controlling the particle size distribution and size and electrode made by the same |
| JP2009146578A (en) * | 2007-12-11 | 2009-07-02 | Noritake Co Ltd | Solar cell and solar cell aluminum paste |
| TWI530963B (en) * | 2011-04-28 | 2016-04-21 | Dowa Electronics Materials Co | Sheet-like silver microparticles and methods for producing the same, and a paste using the same and a paste |
| JP6090706B2 (en) * | 2012-01-06 | 2017-03-08 | 日本電気硝子株式会社 | Electrode forming glass and electrode forming material using the same |
| EP2805334A4 (en) * | 2012-01-16 | 2015-10-28 | Heraeus Precious Metals North America Conshohocken Llc | Aluminum conductor paste for back surface passivated cells with locally opened vias |
| US20130183795A1 (en) * | 2012-01-16 | 2013-07-18 | E I Du Pont De Nemours And Company | Solar cell back side electrode |
| JP6214400B2 (en) * | 2012-02-02 | 2017-10-18 | 東洋アルミニウム株式会社 | Paste composition |
| KR102535985B1 (en) * | 2014-10-27 | 2023-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Particle, electrode, power storage device, electronic device, and method for manufacturing electrode |
| JP5957546B2 (en) * | 2015-01-07 | 2016-07-27 | 株式会社ノリタケカンパニーリミテド | Conductive composition |
-
2016
- 2016-11-02 JP JP2016215228A patent/JP6762848B2/en active Active
-
2017
- 2017-10-27 TW TW106137170A patent/TWI726167B/en active
- 2017-11-01 CN CN201711057979.6A patent/CN108022672B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003277170A (en) * | 2002-03-26 | 2003-10-02 | Kyocera Corp | Composition for wiring conductor |
| JP4178374B2 (en) * | 2002-08-08 | 2008-11-12 | 三井金属鉱業株式会社 | Silver coated flake copper powder, method for producing the silver coated flake copper powder, and conductive paste using the silver coated flake copper powder |
| JP2005019248A (en) * | 2003-06-26 | 2005-01-20 | Mitsubishi Paper Mills Ltd | Metal-containing paste and interlayer connection method |
| JP4660701B2 (en) * | 2004-12-03 | 2011-03-30 | Ｄｏｗａエレクトロニクス株式会社 | Silver-coated copper powder, method for producing the same, and conductive paste |
| JP4840097B2 (en) * | 2006-11-20 | 2011-12-21 | 住友ベークライト株式会社 | Conductive copper paste |
| JP2011052300A (en) * | 2009-09-04 | 2011-03-17 | Dowa Electronics Materials Co Ltd | Flaky silver powder, method for producing the same, and conductive paste |
| CN104508759A (en) * | 2012-05-18 | 2015-04-08 | 材料概念有限公司 | Conductive paste, method for forming wiring, electronic component, and silicon solar cell |
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| WO2021042419A1 (en) * | 2019-09-04 | 2021-03-11 | 南通天盛新能源股份有限公司 | Paste for n-type solar cell front fine grids and preparation method therefor |
| US20220238249A1 (en) * | 2019-09-04 | 2022-07-28 | Nantong Tiansheng New Energy Co., Ltd. | Type of front finger paste for n-type solar cells as well as its preparation methods |
| CN111969071A (en) * | 2020-08-25 | 2020-11-20 | 常州时创能源股份有限公司 | Metallization method and solar cell |
| CN111969071B (en) * | 2020-08-25 | 2022-03-15 | 常州时创能源股份有限公司 | Metallization method and solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI726167B (en) | 2021-05-01 |
| CN108022672B (en) | 2020-03-20 |
| JP6762848B2 (en) | 2020-09-30 |
| JP2018074078A (en) | 2018-05-10 |
| TW201818558A (en) | 2018-05-16 |
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