TWI726167B - Paste composition - Google Patents
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- TWI726167B TWI726167B TW106137170A TW106137170A TWI726167B TW I726167 B TWI726167 B TW I726167B TW 106137170 A TW106137170 A TW 106137170A TW 106137170 A TW106137170 A TW 106137170A TW I726167 B TWI726167 B TW I726167B
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- 239000000203 mixture Substances 0.000 title claims abstract description 79
- 239000002245 particle Substances 0.000 claims abstract description 159
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 65
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000002923 metal particle Substances 0.000 claims abstract description 39
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 25
- 238000000790 scattering method Methods 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052796 boron Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 28
- -1 organic carrier Substances 0.000 abstract description 13
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ODCMOZLVFHHLMY-UHFFFAOYSA-N 1-(2-hydroxyethoxy)hexan-2-ol Chemical compound CCCCC(O)COCCO ODCMOZLVFHHLMY-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- HDNHWROHHSBKJG-UHFFFAOYSA-N formaldehyde;furan-2-ylmethanol Chemical compound O=C.OCC1=CC=CO1 HDNHWROHHSBKJG-UHFFFAOYSA-N 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- BSPSZRDIBCCYNN-UHFFFAOYSA-N phosphanylidynetin Chemical class [Sn]#P BSPSZRDIBCCYNN-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 150000003681 vanadium Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical class [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
提供一種膏狀組成物,其可形成對於PERC型太陽電池單元等之 太陽電池單元可賦予高轉換效率及高短路電流值之電極。 Provide a paste-like composition, which can be formed for PERC type solar cells, etc. The solar cell unit can provide electrodes with high conversion efficiency and high short-circuit current value.
本發明係提供一種膏狀組成物,其特徵係至少包含:鋁粒子及鋁-矽合金粒子中至少一者的金屬粒子、玻璃粉末、有機載體,金屬粒子,以雷射衍射散射法所測定之作為體積基準之粒度分佈曲線中,最小粒徑Dmin係1.5μm以上2.0μm以下,粒度分佈曲線中,對應於50%處之中心粒徑(D50)係4.0μm以上8.0μm以下,且,後述式(1)D=D50/(D90-D10) (1)(式(1)中,D50係中心粒徑,D90,係粒度分佈曲線中對應於90%處之粒徑,D10,係粒度分佈曲線中對應於10%處之粒徑)所表示之D值係0.7以上。 The present invention provides a paste composition, which is characterized by at least comprising: metal particles of at least one of aluminum particles and aluminum-silicon alloy particles, glass powder, organic carrier, metal particles, measured by laser diffraction scattering method In the particle size distribution curve as a volume basis, the minimum particle size Dmin is 1.5 μm or more and 2.0 μm or less. In the particle size distribution curve, the center particle size (D50) corresponding to 50% is 4.0 μm or more and 8.0 μm or less. And, the following formula (1) D=D50/(D90-D10) (1) (In formula (1), D50 is the central particle size, D90 is the particle size corresponding to 90% of the particle size distribution curve, D10, The D value represented by the particle size distribution curve corresponding to 10% of the particle size is above 0.7.
Description
本發明係關於一種膏狀組成物。 The present invention relates to a paste composition.
近年,以提升結晶系太陽電池單元之轉換效率(發電効率)或信頼性等作為目的,目前進行了各種之研究開發。其中之一,PERC(Passivated emitter and rear cell)型高轉換效率單元已被注目。PERC型高轉換效率單元,例如,具有一構造,該構造係具備鋁作為主成分之電極。目前已知藉由適切地設計此電極層之構成,可提高PERC型高轉換效率單元之轉換效率。例如,專利文獻1,已記載一種鋁膏狀組成物,其係含有由30-70mol%Pb2+、1-40mol%Si4+、10-65mo%B3+、1-25mol%Al3+所構成之玻璃料。
In recent years, various researches and developments have been carried out for the purpose of improving the conversion efficiency (power generation efficiency) or reliability of crystalline solar cells. One of them, PERC (Passivated emitter and rear cell) type high conversion efficiency unit has been noticed. The PERC type high conversion efficiency unit, for example, has a structure with an electrode having aluminum as a main component. It is currently known that by appropriately designing the structure of the electrode layer, the conversion efficiency of the PERC-type high conversion efficiency unit can be improved. For example,
【專利文獻1】日本特開2013-145865號公報 [Patent Document 1] JP 2013-145865 A
然而,使用傳統之膏狀組成物所形成之具備電極之太陽電池單元的轉換效率,相較於理論轉換效率卻仍留有提升之餘地,並未實現得到充分之高轉換效率。特別係,使用傳統之膏狀組成物時,有難以得到高短路電流值之課題。 However, compared with the theoretical conversion efficiency, the conversion efficiency of a solar cell unit with electrodes formed using a conventional paste composition still has room for improvement, and a sufficiently high conversion efficiency has not been achieved. In particular, there is a problem that it is difficult to obtain a high short-circuit current value when using a conventional paste composition.
本發明係鑑於上述技術背景而成,目的在於提供一種膏狀組成物,其係可形成一電極,對於PERC型太陽電池單元等之太陽電池單元可得到高轉換效率及高短路電流值者。 The present invention is made in view of the above technical background, and aims to provide a paste composition that can form an electrode and can obtain high conversion efficiency and high short-circuit current value for solar cells such as PERC solar cells.
本發明人等為達到上述目的而深入研究的結果,發現藉由將具有特定之粒度分佈之鋁粒子及/或鋁-矽合金粒子作為必要之構成成分時,可達成上述目的,從而完成本發明。 As a result of intensive research to achieve the above-mentioned object, the inventors found that the above-mentioned object can be achieved when aluminum particles and/or aluminum-silicon alloy particles having a specific particle size distribution are used as essential constituents, thereby completing the present invention. .
亦即,本發明,例如,係包含以下之項所記載之主題。 That is, the present invention, for example, includes the subject matter described in the following items.
項1.一種膏狀組成物,其特徵係至少包含:鋁粒子及鋁-矽合金粒子中至少一者的金屬粒子、玻璃粉末、有機載體,前述金屬粒子,以雷射衍射散射法所測定之作為體積基準之粒度分佈曲線中,最小粒徑Dmin係1.5μm以上2.0μm以下,前述粒度分佈曲線中,對應於50%處之中心粒徑(D50)係4.0μm以上8.0μm以下,且,後述式(1)
D=D50/(D90-D10) (1)(式(1)中,D50係前述中心粒徑,D90,係前述粒度分佈曲線中對應於90%處之粒徑,D10,係前述粒度分佈曲線中對應於10%處之粒徑)所表示之D值係0.7以上。
項2.如項1所記載之膏狀組成物,其中,前述玻璃粉末,係包含選自鉛(Pb)、鉍(Bi)、釩(V)、硼(B)、矽(Si)、錫(Sn)、磷(P)及鋅(Zn)所成群中1種以上之元素。
項3.如項1或2所記載之膏狀組成物,其中,前述金屬粒子100質量份時,前述玻璃粉末之含有量係1質量份以上8質量份以下,前述有機載體之含有量係20質量份以上45質量份以下。
藉由本發明之膏狀組成物,可形成對於PERC型太陽電池單元等之太陽電池單元可賦予高轉換效率及高短路電流值之電極。 With the paste composition of the present invention, it is possible to form an electrode that can impart high conversion efficiency and high short-circuit current value to solar battery cells such as PERC-type solar battery cells.
1:矽半導體基板 1: Silicon semiconductor substrate
2:n型不純物層 2: n-type impurity layer
3:反射防止膜(鈍化膜) 3: Anti-reflection film (passivation film)
4:柵電極 4: Gate electrode
5:電極層 5: Electrode layer
6:合金層 6: Alloy layer
7:p+層 7: p+ layer
8:裏面電極 8: Inside electrode
9:接觸孔 9: Contact hole
10:膏狀組成物 10: Paste composition
【圖1】表示PERC型太陽電池單元之斷面構造之一例的模式圖,(a)係實施形態之一例,(b)係實施形態之其他例。 [Fig. 1] A schematic diagram showing an example of the cross-sectional structure of a PERC type solar cell unit. (a) is an example of the embodiment, and (b) is another example of the embodiment.
【圖2】實施例與比較例所製作之電極構造之斷面的模式圖。 [Fig. 2] A schematic view of the cross-section of the electrode structure produced in the embodiment and the comparative example.
以下,詳細說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described in detail.
本發明之膏狀組成物,例如,係為形成太陽電池單元之電極而使用之材料。太陽電池單元,並無特別限定,可列舉例如,PERC(Passivated emitter and rear cell)型高轉換效率單元(以下,稱為「PERC型太陽電池單元」)。本發明之膏狀組成物,例如,係用以形成PERC型太陽電池單元之裏面電極。以下,本發明之膏狀組成物,亦有簡單記載為「膏狀組成物」之情形。 The paste composition of the present invention is, for example, a material used for forming electrodes of solar battery cells. The solar cell unit is not particularly limited. For example, a PERC (Passivated emitter and rear cell) type high conversion efficiency cell (hereinafter referred to as "PERC type solar cell unit") can be mentioned. The paste composition of the present invention, for example, is used to form the inner electrode of a PERC-type solar cell unit. Hereinafter, the paste composition of the present invention may also be simply described as "paste composition".
最初,說明PERC型太陽電池單元之構造之一例。 Initially, an example of the structure of a PERC-type solar cell unit is explained.
1.PERC型太陽電池單元 1. PERC type solar cell unit
圖1(a)、(b),係PERC型太陽電池單元之一般狀態之斷面構造之模式圖。PERC型太陽電池單元,可具備:矽半導體基板1、n型不純物層2、反射防止膜3、柵電極4、電極層5、合金層6、p+層7,作為構成要素。
Figure 1 (a) and (b) are schematic diagrams of the cross-sectional structure of the PERC solar cell unit in the general state. The PERC type solar cell unit may include: a
矽半導體基板1,例如,係用作厚度為180~250μm之p型矽基板。
The
n型不純物層2,係設置於矽半導體基板1之受光面側。
n型不純物層2之厚度,例如,係0.3~0.6μm。
The n-
反射防止膜3及柵電極4,係設置於n型不純物層2之表面。反射防止膜3,例如,亦稱作氮化矽膜所形成之鈍化膜。反射防止膜3,係作為鈍化膜發揮作用,抑制矽半導體基板1之表面發生之電子的再
結合,其結果,可減少發生之載體的再結合率。藉此,提高PERC型太陽電池單元之轉換效率。
The
反射防止膜3,亦設置於矽半導體基板1之裏面側,亦即,設置於與前述受光面為逆側之面。此外,將此裏面側之反射防止膜3貫通,且,削除矽半導體基板1之裏面的一部份而形成之接觸孔,係形成於矽半導體基板1之裏面側。
The
電極層5,係形成為通過前述接觸孔與矽半導體基板1接觸者。電極層5,係藉由本發明之膏狀組成物而形成之部材,形成為所定之圖案形狀。如圖1(a)之形態,電極層5,亦可形成為覆蓋PERC型太陽電池單元之裏面全體者,抑或,形成為覆蓋接觸孔及其附近者。電極層5之主成分係鋁,電極層5係鋁電極層。
The
電極層5,例如,藉由將膏狀組成物塗佈為所定之圖案形狀而形成並得到。塗佈方法並無特別限定,可列舉例如,絲網印刷等習知的方法。塗佈膏狀組成物後,因應必要進行乾燥後,例如,藉由660℃等超過鋁之熔點的溫度進行短時間燒成,從而形成電極層5並得到。
The
藉由如此之燒成,膏狀組成物所含之鋁,會於矽半導體基板1之內部擴散。藉此,電極層5與矽半導體基板1之間,可形成鋁-矽(Al-Si)合金層(合金層6),同時,藉由鋁原子之擴散,可形成p+層7作為不純物層。
By such firing, the aluminum contained in the paste composition diffuses inside the
p+層7,可得到防止電子的再結合,提升生成載體之收集効率之効果,亦即,可得到BSF(Back Surface Field)効果。
The
前述電極層5與合金層6所形成之電極,係圖1所示之裏面電極8。因此,裏面電極8,係使用膏狀組成物而形成者,例如,藉由於裏面側之反射防止膜3(鈍化膜3)上塗佈,可形成裏面電極8。特別係,使用本發明之膏狀組成物形成裏面電極8時,可容易抑制電極層5與矽半導體基板1之界面中空洞的生成,從而可得到良好之BSF効果。
The electrode formed by the
2.膏狀組成物 2. Paste composition
接著詳述,本實施形態之膏狀組成物。 Next, the paste composition of this embodiment will be described in detail.
膏狀組成物,係至少包含鋁粒子及鋁-矽合金粒子中至少一方者的金屬粒子、玻璃粉末、有機載體,前述金屬粒子,雷射衍射散射法所測定作為體積基準之粒度分佈曲線中,最小粒徑Dmin係1.5μm以上2.0μm以下,前述粒度分佈曲線中,對應於50%處之中心粒徑(D50)係4.0μm以上8.0μm以下,且,後述式(1) The paste composition is a metal particle, glass powder, organic carrier containing at least one of aluminum particles and aluminum-silicon alloy particles, the aforementioned metal particles, in the volume-based particle size distribution curve measured by the laser diffraction scattering method, The minimum particle diameter Dmin is 1.5 μm or more and 2.0 μm or less. In the aforementioned particle size distribution curve, the center particle diameter (D50) corresponding to 50% is 4.0 μm or more and 8.0 μm or less, and the following formula (1)
D=D50/(D90-D10) (1) D=D50/(D90-D10) (1)
(式(1)中,D50係前述中心粒徑,D90,係前述粒度分佈曲線中對應於90%處之粒徑,D10,係前述粒度分佈曲線中對應於10%處之粒徑) (In formula (1), D50 is the aforementioned central particle size, D90 is the particle size corresponding to 90% in the aforementioned particle size distribution curve, and D10 is the particle size corresponding to 10% in the aforementioned particle size distribution curve)
所表示之D值係0.7以上。 The indicated value of D is above 0.7.
藉由本發明之膏狀組成物,可形成對於PERC型太陽電池單元等之太陽電池單元可賦予高轉換效率及高短路電流值之電極。 With the paste composition of the present invention, it is possible to form an electrode that can impart high conversion efficiency and high short-circuit current value to solar battery cells such as PERC-type solar battery cells.
如前述,藉由使用膏狀組成物,可形成PERC型太陽電池單元等之太陽電池單元之裏面電極。亦即,本發明之膏狀組成物,可用作為通過形成於矽基板上之鈍化膜所具有之孔穴而與矽基板電接觸,從而 形成太陽電池用裏面電極者。 As mentioned above, by using the paste composition, the inner electrodes of solar battery cells such as PERC solar battery cells can be formed. That is, the paste composition of the present invention can be used as electrical contact with the silicon substrate through the holes of the passivation film formed on the silicon substrate, thereby Those who form the inner electrodes for solar cells.
膏狀組成物,係含有鋁粒子及鋁-矽合金粒子中至少一者作為金屬粒子之構成成分。藉由使膏狀組成物含有前述金屬粒子,膏狀組成物可被燒成而形成燒結體,發揮導電性。 The paste composition contains at least one of aluminum particles and aluminum-silicon alloy particles as a constituent of metal particles. By containing the aforementioned metal particles in the paste composition, the paste composition can be fired to form a sintered body and exhibit conductivity.
膏狀組成物,可含有鋁粒子及鋁-矽合金粒子中至少一者作為構成成分,或者,可將鋁粒子及鋁-矽合金粒子之兩者作為構成成分。 The paste composition may contain at least one of aluminum particles and aluminum-silicon alloy particles as a constituent component, or may contain both aluminum particles and aluminum-silicon alloy particles as a constituent component.
前述金屬粒子之形狀並無特別限定。例如,前述金屬粒子之形狀可係球狀、橢圓狀、不定形狀、鱗片狀、纖維狀等中任一者。前述金屬粒子之形狀係球狀時,藉由膏狀組成物所形成之前述電極層5中,前述金屬粒子之填充性增大,可有效地降低電阻抗。此外,前述金屬粒子之形狀係球狀時,藉由膏狀組成物所形成之前述電極層5中,矽半導體基板1與前述金屬粒子(鋁粒子及/或鋁-矽合金粒子)之接點增加,可易於形成良好之BSF層。
The shape of the aforementioned metal particles is not particularly limited. For example, the shape of the aforementioned metal particles may be any of spherical, elliptical, indefinite, scaly, fibrous, and the like. When the shape of the metal particles is spherical, in the
膏狀組成物含有鋁粒子時,燒成膏狀組成物而形成燒結體時與矽半導體基板1之間可形成含有鋁-矽合金之合金層6及p+層7,從而可進一步提高前述之BSF効果。
When the paste composition contains aluminum particles, when the paste composition is fired to form a sintered body, an aluminum-silicon alloy-containing alloy layer 6 and a
另一方面,膏狀組成物含有鋁-矽合金粒子時,鋁-矽合金粒子中所含矽成分,可得到稼動控制膏狀組成物中之鋁與矽半導體基板1中之矽的過剩反應。藉此,可易於抑制電極層5與矽半導體基板1之界面中產生空洞。
On the other hand, when the paste composition contains aluminum-silicon alloy particles, the silicon component contained in the aluminum-silicon alloy particles can control the excess reaction of aluminum in the paste composition and silicon in the
鋁粒子及鋁-矽合金粒子之純度並無特別限定,此外,鋁 粒子及鋁-矽合金粒子,亦可包含無法避免含有之金屬。 The purity of aluminum particles and aluminum-silicon alloy particles is not particularly limited. In addition, aluminum Particles and aluminum-silicon alloy particles may also contain unavoidable metals.
鋁-矽合金粒子,只要係鋁及矽之合金即可,兩者之比率並無特別限定。例如,鋁-矽合金粒子中,含有矽5質量%以上40質量%以下時,由此膏狀組成物形成之電極層可維持低阻抗值。 The aluminum-silicon alloy particles may be an alloy of aluminum and silicon, and the ratio of the two is not particularly limited. For example, when aluminum-silicon alloy particles contain 5% by mass or more and 40% by mass or less of silicon, the electrode layer formed from the paste composition can maintain a low resistance value.
前述金屬粒子,以雷射衍射散射法所測定之作為體積基準之粒度分佈曲線中,最小粒徑Dmin係1.5μm以上2.0μm以下。 Dmin在此範圍中時,膏狀組成物,係意指具較少之微粉狀之前述金屬粒子。Dmin未達1.5μm時,短路電流降低,此外,Dmin超過2.0μm時,開放端電壓降低,惡化太陽電池單元之轉換效率。Dmin,係1.5~1.8μm特佳。 For the aforementioned metal particles, in the particle size distribution curve measured by the laser diffraction scattering method as a volume basis, the smallest particle size Dmin is 1.5 μm or more and 2.0 μm or less. When Dmin is in this range, the paste-like composition means the aforementioned metal particles with less fine powder. When Dmin is less than 1.5 μm, the short-circuit current decreases. In addition, when Dmin exceeds 2.0 μm, the open-end voltage decreases, deteriorating the conversion efficiency of the solar cell unit. Dmin, 1.5~1.8μm is particularly good.
前述金屬粒子,前述粒度分佈曲線中,對應於50%處之中心粒徑(D50)係4.0μm以上8.0μm以下。D50未達4.0μm時,太陽電池單元之轉換效率會減少,D50超過8.0μm時,開放端電壓會降低。此外,藉由D50係4.0μm以上8.0μm以下,前述金屬粒子的凝集難以發生,並且,燒成時之反應性亦良好,鋁可容易與矽等形成合金。 For the aforementioned metal particles, in the aforementioned particle size distribution curve, the central particle size (D50) corresponding to 50% is 4.0 μm or more and 8.0 μm or less. When D50 is less than 4.0μm, the conversion efficiency of the solar cell will decrease. When D50 exceeds 8.0μm, the open-end voltage will decrease. In addition, with the D50 system of 4.0 μm or more and 8.0 μm or less, aggregation of the aforementioned metal particles is difficult to occur, and the reactivity during firing is also good, and aluminum can easily form an alloy with silicon and the like.
前述金屬粒子,係式(1) The aforementioned metal particles are represented by formula (1)
D=D50/(D90-D10) (1) D=D50/(D90-D10) (1)
(式(1)中,D50係前述中心粒徑,D90,係前述粒度分佈曲線中對應於90%處之粒徑,D10,係前述粒度分佈曲線中對應於10%處之粒徑) (In formula (1), D50 is the aforementioned central particle size, D90 is the particle size corresponding to 90% in the aforementioned particle size distribution curve, and D10 is the particle size corresponding to 10% in the aforementioned particle size distribution curve)
所表示之D值為0.7以上。藉由D值在此範圍中,前述金屬粒子, 係意指微粉及粗粉之比例較少,粒徑之分佈較小,具有進一步平均之粒度。D值未達0.7時,阻抗難以降低,轉換效率不充分。D值之上限,例如,可係2.0,此時,生產性之低化難以發生。較佳之D值之上限,係1.4。D值,係0.7~1.0特佳。 The indicated value of D is 0.7 or more. With the D value in this range, the aforementioned metal particles, It means that the ratio of fine powder and coarse powder is smaller, the particle size distribution is smaller, and the particle size is more average. When the value of D is less than 0.7, the impedance is difficult to decrease, and the conversion efficiency is insufficient. The upper limit of the D value, for example, can be 2.0. In this case, it is difficult to reduce the productivity. The upper limit of the preferred value of D is 1.4. The value of D is 0.7~1.0 especially good.
前述粒度分佈曲線,可根據JIS Z 8825:2013而使用雷射衍射散射法測定前述金屬粒子所得。Dmin,係前述粒度分佈曲線中,最小粒徑之值。D50,係前述粒度分佈曲線中對應於50%處之粒徑,換言之,係意指前述粒度分佈曲線中粒徑之積算值為50%時之粒徑。相同地,D90,係意指前述積算值為90%,D10,係意指前述積算值為10%時之粒徑。 The aforementioned particle size distribution curve can be obtained by measuring the aforementioned metal particles using a laser diffraction scattering method in accordance with JIS Z 8825:2013. Dmin is the value of the smallest particle size in the aforementioned particle size distribution curve. D50 is the particle size corresponding to 50% in the aforementioned particle size distribution curve. In other words, it means the particle size when the cumulative value of the particle size in the aforementioned particle size distribution curve is 50%. Similarly, D90 refers to the aforementioned integrated value of 90%, and D10 refers to the particle size when the aforementioned integrated value is 10%.
本發明中,前述粒度分佈曲線,例如,可使用麥奇克拜爾公司製之雷射衍射散射式粒徑分佈測定裝置「Microtrac MT3000II系列」而得,可計測Dmin、D10、D50及D90。 In the present invention, the aforementioned particle size distribution curve can be obtained, for example, using a laser diffraction scattering particle size distribution measuring device "Microtrac MT3000II Series" manufactured by Microtrac Bayer, which can measure Dmin, D10, D50, and D90.
前述金屬粒子,藉由具有Dmin、D50及D之3種類的參數在前述特定之範圍內,使具備膏狀組成物所形成之電極層之太陽電池單元具有高短路電流(ISC),此外,開放端電壓(VOC)亦提高,從而可顯示出優異之轉換效率。 The aforementioned metal particles have three types of parameters of Dmin, D50, and D within the aforementioned specific range, so that the solar cell with the electrode layer formed by the paste composition has a high short-circuit current (I SC ). In addition, The open end voltage (V OC ) is also increased, which can show excellent conversion efficiency.
特別係,膏狀組成物係如前述,微粉之量已控制,於膏狀組成物之燒成時鋁可容易與矽等形成合金,易於得到良好之BSF効果,其結果,太陽電池單元之轉換效率可較傳統還高。藉此,本申請發明者,發現傳統上未受注目之膏狀組成物中之前述金屬粒子的微粉,可對於太陽電池單元之轉換效率有很大之影響力,應須防止前述金屬粒子之微細粉末 之混入,調節前述之3種類之參數。藉此,得到可提高太陽電池單元之轉換效率者。 In particular, the paste composition is as mentioned above, and the amount of fine powder has been controlled. When the paste composition is fired, aluminum can easily form an alloy with silicon, etc., and it is easy to obtain a good BSF effect. As a result, the conversion of solar cells The efficiency can be higher than traditional. As a result, the inventors of the present application have discovered that the fine powder of the aforementioned metal particles in the traditionally unattractive paste composition can have a great influence on the conversion efficiency of the solar cell unit, and it is necessary to prevent the aforementioned fineness of the metal particles. powder The mixing, adjust the aforementioned 3 types of parameters. By this, the conversion efficiency of the solar cell unit can be improved.
膏狀組成物所含前述金屬粒子,亦可係鋁粒子及鋁-矽合金粒子兩者。此外,膏狀組成物,只要不阻礙本發明之効果,亦可含有鋁粒子及鋁-矽合金粒子以外之其他金屬粒子。 The aforementioned metal particles contained in the paste composition may be both aluminum particles and aluminum-silicon alloy particles. In addition, the paste composition may contain metal particles other than aluminum particles and aluminum-silicon alloy particles as long as the effects of the present invention are not hindered.
膏狀組成物含有鋁粒子及鋁-矽合金粒子兩者時,兩者之混合比率並無特別限定。例如,相對於鋁粒子100質量份,鋁-矽合金粒子為100質量份以上500質量份以下即可,在膏狀組成物之燒成時,藉由鋁與矽半導體基板1中之矽的過剩反應而可有效地控制,易於得到優異之BSF効果。
When the paste composition contains both aluminum particles and aluminum-silicon alloy particles, the mixing ratio of the two is not particularly limited. For example, with respect to 100 parts by mass of aluminum particles, the amount of aluminum-silicon alloy particles is not less than 100 parts by mass and not more than 500 parts by mass. During the firing of the paste composition, the excess silicon in the aluminum and
鋁粒子及鋁-矽合金粒子,任一者皆可藉由習知的方法製造。 Either the aluminum particles and the aluminum-silicon alloy particles can be manufactured by a conventional method.
鋁粒子及鋁-矽合金粒子之Dmin、D50、D值的調節,亦可藉由傳統所進行之粒度分佈的控制方法而進行。特別係,根據可容易對於此等之值進行調節之觀點,藉由氣體霧化法,製造鋁粒子及鋁-矽合金粒子為佳。 The adjustment of the Dmin, D50, and D values of aluminum particles and aluminum-silicon alloy particles can also be performed by traditional particle size distribution control methods. In particular, from the viewpoint that these values can be easily adjusted, it is preferable to produce aluminum particles and aluminum-silicon alloy particles by a gas atomization method.
玻璃粉末,係發揮幫助前述金屬粒子與矽的反應,以及,前述金屬粒子本身的燒結之作用。 The glass powder plays a role in assisting the reaction between the metal particles and silicon and the sintering of the metal particles themselves.
玻璃粉末並未特別限定,例如,可係為了形成太陽電池單元之電極層而使用之膏狀組成物所含習知的玻璃成分。玻璃粉末之具體例,可係選自鉛(Pb)、鉍(Bi)、釩(V)、硼(B)、矽(Si)、錫(Sn)、磷(P),以及,鋅(Zn)所成群中1種,或亦可含有2種 以上之元素。此外,亦可使用含有鉛之玻璃粉末,或者,鉍系、釩系、錫-磷系、硼矽酸鋅系、鹼性硼矽酸系等之無鉛之玻璃粉末。特別係根據對於人體影響之觀點,使用無鉛之玻璃粉末為佳。 The glass powder is not particularly limited. For example, it may be a conventional glass component contained in a paste composition used for forming an electrode layer of a solar battery cell. Specific examples of glass powder can be selected from lead (Pb), bismuth (Bi), vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P), and zinc (Zn) ) 1 species in the group, or 2 species Elements of the above. In addition, lead-containing glass powders, or lead-free glass powders such as bismuth series, vanadium series, tin-phosphorus series, zinc borosilicate series, and alkaline borosilicate series can also be used. In particular, it is better to use lead-free glass powder from the viewpoint of the impact on the human body.
具體之玻璃粉末,可含有係選自B2O3、Bi2O3、ZnO、SiO2、Al2O3、BaO、CaO、SrO、V2O5、Sb2O3、WO3、P2O5及TeO2所成群中至少1種之成分。例如,亦可在玻璃粉末中,將B2O3成分與Bi2O3成分之莫耳比(B2O3/Bi2O3)係0.8以上4.0以下之玻璃料,V2O5成分與BaO成分之莫耳比(V2O5/BaO)係1.0以上2.5以下之玻璃料組合。 The specific glass powder may contain selected from B 2 O 3 , Bi 2 O 3 , ZnO, SiO 2 , Al 2 O 3 , BaO, CaO, SrO, V 2 O 5 , Sb 2 O 3 , WO 3 , P 2 O 5 and TeO 2 are at least one component in the group. For example, in the glass powder, the molar ratio of the B 2 O 3 component to the Bi 2 O 3 component (B 2 O 3 /Bi 2 O 3 ) can be a glass frit of 0.8 or more and 4.0 or less, and V The molar ratio of the 2 O 5 component and the BaO component (V 2 O 5 /BaO) is a glass frit combination of 1.0 to 2.5.
玻璃粉末之軟化點,例如,可係750℃以下。玻璃粉末所含粒子之平均粒徑,例如,可係1μm以上3μm以下。 The softening point of the glass powder, for example, can be below 750°C. The average particle diameter of the particles contained in the glass powder may be, for example, 1 μm or more and 3 μm or less.
膏狀組成物中所含玻璃粉末之含有量,例如,相對於前述金屬粒子100質量份,係0.5質量份以上40質量份以下為佳。此時,矽半導體基板1及反射防止膜3(鈍化膜)之密著性良好,此外,電阻抗難以增大。膏狀組成物中所含玻璃粉末之含有量,相對前述金屬粒子100質量份,係1質量份以上8質量份以下特佳。
The content of the glass powder contained in the paste composition is, for example, preferably 0.5 parts by mass or more and 40 parts by mass or less relative to 100 parts by mass of the aforementioned metal particles. At this time, the adhesion of the
有機載體,可使用以溶劑溶解因應必要之各種添加劑及樹脂所成材料。或者,亦可使用未含溶劑而直接將樹脂作為有機載體使用。 The organic carrier can be made by dissolving various additives and resins as necessary in a solvent. Alternatively, it is also possible to use the resin as an organic vehicle without containing a solvent.
溶劑,可使用習知的種類,具體而言,可列舉如:二乙二醇單丁醚、二乙二醇單丁醚乙酸酯、二丙二醇單甲醚等。 As the solvent, conventional types can be used. Specifically, examples thereof include diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and dipropylene glycol monomethyl ether.
各種添加劑,例如,可使用抗氧化劑、腐蝕抑制劑、消泡劑、增黏劑、黏著賦予劑、耦合劑、静電賦予劑、聚合禁止劑、觸變性 劑、沉降防止劑等。具體而言,例如,可使用聚乙二醇酯化合物、聚乙二醇醚化合物、聚氧乙烯脫水山梨糖醇酯化合物、脫水山梨糖醇烷基酯化合物、脫水山梨糖醇烷基酯化合物、磷酸酯化合物、醯胺聚酯酸胺鹽、氧化聚乙烯系化合物、脂肪酸醯胺蠟等。 Various additives, for example, antioxidants, corrosion inhibitors, defoamers, tackifiers, adhesion imparting agents, coupling agents, static electricity imparting agents, polymerization inhibitors, thixotropic agents can be used Agents, sedimentation preventive agents, etc. Specifically, for example, polyethylene glycol ester compounds, polyethylene glycol ether compounds, polyoxyethylene sorbitan ester compounds, sorbitan alkyl ester compounds, sorbitan alkyl ester compounds, Phosphate ester compounds, amide polyester acid amine salts, oxidized polyethylene compounds, fatty acid amide waxes, etc.
樹脂可使用習知的種類,可將乙基纖維素、硝化纖維素、聚乙烯醇縮丁醛、酚醛樹脂、黑色素樹脂、尿素樹脂、二甲苯樹脂、醇酸樹脂、不飽和聚酯樹脂、丙烯酸樹脂、聚酰亞胺樹脂、呋喃樹脂、聚氨酯樹脂、異氰酸酯化合物、熱固性樹脂如氰酸酯化合物等、聚乙烯、聚丙烯、聚苯乙烯、ABS樹脂、聚甲基丙烯酸甲酯、聚氯乙烯、聚偏二氯乙烯、聚乙酸乙烯酯、聚乙烯醇、聚縮醛、聚碳酸酯、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二醇酯、聚苯醚、聚砜、聚酰亞胺、聚醚砜、聚芳酯、聚醚醚酮、聚四氟乙烯、矽樹脂等二種以上組合使用。 Known types of resins can be used, including ethyl cellulose, nitrocellulose, polyvinyl butyral, phenolic resin, melanin resin, urea resin, xylene resin, alkyd resin, unsaturated polyester resin, acrylic Resins, polyimide resins, furan resins, polyurethane resins, isocyanate compounds, thermosetting resins such as cyanate ester compounds, polyethylene, polypropylene, polystyrene, ABS resin, polymethyl methacrylate, polyvinyl chloride, Polyvinylidene chloride, polyvinyl acetate, polyvinyl alcohol, polyacetal, polycarbonate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene ether, polysulfone, polyvinyl Two or more kinds of imide, polyethersulfone, polyarylate, polyetheretherketone, polytetrafluoroethylene, silicone resin, etc. are used in combination.
有機載體所含樹脂、溶劑、各種添加劑之比率可任意調整,例如,可與習知的有機載體相同之成分比。 The ratio of the resin, solvent, and various additives contained in the organic vehicle can be adjusted arbitrarily, for example, it can be the same as the conventional organic vehicle.
有機載體之含有比率並無特別限定,例如,根據具有良好印刷性之觀點,相對前述金屬粒子100質量份,係10質量份以上500質量份以下為佳,20質量份以上45質量份以下特佳。 The content ratio of the organic vehicle is not particularly limited. For example, from the viewpoint of good printability, relative to 100 parts by mass of the aforementioned metal particles, 10 parts by mass or more and 500 parts by mass or less are preferred, and 20 parts by mass or more and 45 parts by mass or less are particularly preferred. .
本發明之膏狀組成物,例如,可適用於形成太陽電池單元之電極層(特別係如圖1所示之PERC型太陽電池單元之裏面電極8)。因此,本發明之膏狀組成物,可作為太陽電池裏面電極形成劑使用而得。
The paste composition of the present invention, for example, can be suitably used to form the electrode layer of a solar battery cell (especially the
以下,藉由實施例進一步具體說明本發明,惟本發明並未限定為此等實施例之態樣。 Hereinafter, the present invention will be further described in detail with examples, but the present invention is not limited to the aspects of these embodiments.
(實施例1) (Example 1)
使用既知的分散裝置(分散器)將藉由氣體霧化法調製之鋁粒子100質量份、具有B2O3-Bi2O3-SrO-BaO-Sb2O3=40/40/10/5/5(mol%)之成分比之玻璃粉末1.5質量份、及以丁基二甘醇溶解乙基纖維素之樹脂液(有機載體)35質量份混合,從而得到膏狀組成物。使用之鋁粒子的Dmin、D10、D50及D90,如後揭之表1所示。 Using a known dispersing device (disperser), 100 parts by mass of aluminum particles prepared by the gas atomization method, having B 2 O 3 -Bi 2 O 3 -SrO-BaO-Sb 2 O 3 =40/40/10/ 1.5 parts by mass of glass powder with a composition ratio of 5/5 (mol%) and 35 parts by mass of resin liquid (organic vehicle) in which ethyl cellulose is dissolved in butyl diethylene glycol are mixed to obtain a paste composition. The Dmin, D10, D50 and D90 of the aluminum particles used are shown in Table 1 later.
(實施例2) (Example 2)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁-矽合金粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum-silicon alloy particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(實施例3) (Example 3)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(實施例4) (Example 4)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁-矽合金粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum-silicon alloy particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(實施例5) (Example 5)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子及鋁-矽合金粒子之混合粒子以外,其他皆與實施例1相 同得到膏狀組成物。前述混合粒子中,鋁粒子與鋁-矽合金粒子之質量比率係1:1。 Except for the aluminum particles, which are changed to the mixed particles of aluminum particles and aluminum-silicon alloy particles with Dmin, D10, D50 and D90 shown in Table 1, the others are the same as in Example 1. At the same time, a paste composition is obtained. In the aforementioned mixed particles, the mass ratio of aluminum particles to aluminum-silicon alloy particles is 1:1.
(實施例6) (Example 6)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子及鋁-矽合金粒子之混合粒子以外,其他皆與實施例1相同得到膏狀組成物。前述混合粒子中,鋁粒子與鋁-矽合金粒子之質量比率係1:1。 Except that the aluminum particles were changed to a mixed particle of aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, and aluminum-silicon alloy particles, everything else was the same as in Example 1 to obtain a paste composition. In the aforementioned mixed particles, the mass ratio of aluminum particles to aluminum-silicon alloy particles is 1:1.
(比較例1) (Comparative example 1)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例2) (Comparative example 2)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁-矽合金粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum-silicon alloy particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例3) (Comparative example 3)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例4) (Comparative Example 4)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例5) (Comparative Example 5)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁-矽合金粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum-silicon alloy particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例6) (Comparative Example 6)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子及鋁-矽合金粒子之混合粒子以外,其他皆與實施例1相同得到膏狀組成物。前述混合粒子中,鋁粒子與鋁-矽合金粒子之質量比率係1:1。 Except that the aluminum particles were changed to a mixed particle of aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, and aluminum-silicon alloy particles, everything else was the same as in Example 1 to obtain a paste composition. In the aforementioned mixed particles, the mass ratio of aluminum particles to aluminum-silicon alloy particles is 1:1.
(比較例7) (Comparative Example 7)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例8) (Comparative Example 8)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例9) (Comparative Example 9)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(比較例10) (Comparative Example 10)
除了鋁粒子,係變更為具有表1所示之Dmin、D10、D50及D90之鋁粒子以外,其他皆與實施例1相同得到膏狀組成物。 Except that the aluminum particles were changed to aluminum particles having Dmin, D10, D50, and D90 shown in Table 1, everything else was the same as in Example 1 to obtain a paste composition.
(評估方法) (evaluation method)
評估用之太陽電池單元之燒成基板係如以下而製作。首先,如圖2之(A)所示,首先,準備厚度為180μm之矽半導體基板1。並且,如圖2之(B)所示,使用波長為532nm之YAG雷射作為雷射發振器,於矽半導體基板1之表面形成直徑D為100μm,深度為1μm之接
觸孔9。此矽半導體基板1,阻抗值係3Ω‧cm,係裏面鈍化型單結晶。
The fired substrate of the solar cell unit used for evaluation was produced as follows. First, as shown in FIG. 2(A), first, a
接著,如圖2之(C)所示,將上述各實施例及比較例所得各膏狀組成物10如包覆裏面全體(形成接觸孔9之側的面),於矽半導體基板1之表面上,使用絲網印刷機,印刷為1.0-1.1g/pc。接著,雖圖未顯示,於受光面印刷由習知的技術作成之Ag膏。之後,使用設定為800℃之紅外帶爐進行燒成。藉由此燒成,如圖2之(D)所示,形成電極層5,此外,進行此燒成時藉由鋁在矽半導體基板1之內部擴散,使電極層5與矽半導體基板1之間形成Al-Si之合金層6,且藉由鋁原子之擴散形成不純物層之p+層(BSF層)7。如以上,製作評估用之燒成基板。
Next, as shown in FIG. 2(C), each
如此所得太陽電池單元,使用Wacom電創之太陽模擬器:WXS-156S-10,I-V測定裝置IV15040-10,進行I-V測定。藉此,測定短路電流(ISC)及開放端電圧(VOC),此外,算出曲線因子(FF)及轉換效率Eff。曲線因子(FF),係使用市販之太陽模擬器進行。 The solar cell unit thus obtained was used for the IV measurement using Wacom's solar simulator: WXS-156S-10, IV measuring device IV15040-10. In this way, the short-circuit current (I SC ) and the open-end voltage (V OC ) are measured, and the curve factor (FF) and the conversion efficiency Eff are calculated. The curve factor (FF) is performed using a commercially available solar simulator.
關於氣孔之評估,以光學顯微鏡(200倍)觀察所得之燒成基板之各試料的斷面,觀察基板與電極層界面中氣孔的有無。觀察光學顯微鏡之觀察視野中複數之接觸孔,所有的接觸孔中未形成空洞時評估為◎,形成空洞之接觸孔係未達全個數之20%評估為○,形成空洞之接觸孔係全個數之20~50%評估為△。 Regarding the evaluation of pores, the cross-section of each sample of the obtained fired substrate was observed with an optical microscope (200 times) to observe the presence or absence of pores in the interface between the substrate and the electrode layer. Observe the plurality of contact holes in the observation field of the optical microscope. When all the contact holes are not formed with voids, it is evaluated as ◎, the contact hole system that forms the void is less than 20% of the total number is evaluated as ○, and the contact hole system that forms the void is all 20~50% of the number is evaluated as △.
表1中,表示評估結果。又,表1中,「Al」係表示所使 用之膏狀組成物所含金屬粒子係鋁粒子,「Al-Si」係表示所使用之膏狀組成物所含金屬粒子係鋁-矽合金粒子。此外,「Al+Al-Si」,係意指金屬粒子係鋁粒子及鋁-矽合金粒子之混合粒子。 In Table 1, the evaluation results are shown. Also, in Table 1, "Al" means the The metal particles contained in the paste composition used are aluminum particles, and "Al-Si" means that the metal particles contained in the paste composition used are aluminum-silicon alloy particles. In addition, "Al+Al-Si" means a mixed particle of metal particles, aluminum particles and aluminum-silicon alloy particles.
表1中Dmin、D10、D50及D90,係根據JIS Z 8825:2013所規定之測定條件,係使用麥奇克拜爾公司製之雷射回折散亂式粒徑分佈測定裝置「Microtrac MT3000II系列」而計測。 Dmin, D10, D50, and D90 in Table 1 are based on the measurement conditions specified in JIS Z 8825:2013, using a laser back-folding random particle size distribution measuring device "Microtrac MT3000II Series" manufactured by Microtrac Bayer. And measure.
如表1所示,使用具有Dmin為1.5~2.0μm,D50為4.0~8.0μm,並且,D值為0.7以上之粒度分佈之金屬粒子時,任一者之Isc皆較大,再者,可達成21.4%以上之高轉換 效率。 As shown in Table 1, when using metal particles with a particle size distribution with Dmin of 1.5 to 2.0 μm, D50 of 4.0 to 8.0 μm, and D value of 0.7 or more, I The sc is relatively large, and moreover, a high conversion efficiency of 21.4% or more can be achieved.
考慮到此次所使用之單元之理論轉換效率係21.5%,使用實施例所得之膏狀組成物時,可認為優異之BSF効果得到發揮。關於比較例4、5,雖Isc係9.83A以上,但VOC未到達0.665mV。因此,BSF効果不充分。 Considering that the theoretical conversion efficiency of the unit used this time is 21.5%, when the paste composition obtained in the example is used, it can be considered that the excellent BSF effect is exerted. Regarding Comparative Examples 4 and 5, although the I sc was 9.83A or more, the V OC did not reach 0.665 mV. Therefore, the BSF effect is insufficient.
此外,鋁粒子,與鋁-矽合金粒子比較,並未對轉換效率產生較大影響,惟確認含有鋁-矽合金粒子之膏狀組成物者,可抑制空洞(氣孔)的發生,提升信頼性。 In addition, aluminum particles, compared with aluminum-silicon alloy particles, did not have a significant impact on conversion efficiency. However, it is confirmed that the paste composition containing aluminum-silicon alloy particles can suppress the occurrence of voids (pores) and improve reliability. .
1:矽半導體基板 1: Silicon semiconductor substrate
2:n型不純物層 2: n-type impurity layer
3:反射防止膜(鈍化膜) 3: Anti-reflection film (passivation film)
4:柵電極 4: Gate electrode
5:電極層 5: Electrode layer
6:合金層 6: Alloy layer
7:p+層 7: p+ layer
8:裏面電極 8: Inside electrode
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