CN108018535A - A kind of opposed target stand magnetic control sputtering device - Google Patents
A kind of opposed target stand magnetic control sputtering device Download PDFInfo
- Publication number
- CN108018535A CN108018535A CN201711477439.3A CN201711477439A CN108018535A CN 108018535 A CN108018535 A CN 108018535A CN 201711477439 A CN201711477439 A CN 201711477439A CN 108018535 A CN108018535 A CN 108018535A
- Authority
- CN
- China
- Prior art keywords
- magnetron sputtering
- target stand
- base station
- baffle
- magnetic control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000001154 acute effect Effects 0.000 claims abstract description 4
- 239000004575 stone Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of opposed target stand magnetic control sputtering device, including magnetron sputtering target stand, magnetron sputtering base station seat, clamping tabletting and baffle plate assembly；The magnetron sputtering target stand is installed on above vacuum chamber；The magnetron sputtering base station seat is installed on below vacuum chamber, it has angle between the magnetron sputtering target stand, and the angle is acute angle；The clamping tabletting is arranged on the top surface of magnetron sputtering base station seat, for gripping substrate to be sputtered；The baffle plate assembly includes multiple baffles, and one of baffle is arranged on the top of magnetron sputtering base station seat, remaining baffle is respectively arranged on below corresponding magnetron sputtering target stand, for separating each target stand of magnetron sputtering and magnetron sputtering base station seat.The present invention can both realize the online plasma cleaning function to substrate material, while can reduce bombardment of the electronics to substrate.
Description
Technical field
The invention belongs to magnetron sputtering field, and in particular to a kind of opposed target stand magnetic control sputtering device.
Background technology
, can be when being stored in an atmosphere due to metal material when carrying out magnetron sputtering plating to some metal material surfaces
Surface forms oxide layer and is difficult to the plating layer film for obtaining good bonding strength, and optimal method is the plated film in vacuum cavity for this
Preceding carry out on-line cleaning, the method plasma bombardment cleaned at present need Coating Materials surface.Traditional way is filled in sputtering
Middle configuration plasma gun is put, general plasma gun price is all higher, and needs to configure corresponding control power supply.
In addition to on-line cleaning, some high molecular materials easily produce some reactions under electron bombardment, cause material
Damage.At this moment the electronics of directive substrate must be stopped using scheme, traditional method includes using grounded metal net pair
Electronics carries out certain collection.
The content of the invention
In view of the above-mentioned problems, the present invention proposes a kind of opposed target stand magnetic control sputtering device, it can be both realized to base sheet
The online plasma cleaning function of material, while bombardment of the electronics to substrate can be reduced.
Realize above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions：
A kind of opposed target stand magnetic control sputtering device, including magnetron sputtering target stand, magnetron sputtering base station seat, clamping tabletting and baffle group
Part；
The magnetron sputtering target stand is installed on above vacuum chamber；
The magnetron sputtering base station seat is installed on below vacuum chamber, it has angle, institute between the magnetron sputtering target stand
It is acute angle to state angle；
The clamping tabletting is arranged on the top surface of magnetron sputtering base station seat, for gripping substrate to be sputtered；
The baffle plate assembly includes multiple baffles, and one of baffle is arranged on the top of magnetron sputtering base station seat, remaining baffle
It is respectively arranged on below corresponding magnetron sputtering target stand, for separating magnetron sputtering target stand and magnetron sputtering base station seat.
As a further improvement on the present invention, the opposed target stand magnetic control sputtering device includes at least one magnetic controlled sputtering target
Seat, each magnetron sputtering target stand are circumferentially uniformly arranged.
As a further improvement on the present invention, the structure snd size all same of each baffle in the baffle plate assembly.
As a further improvement on the present invention, the baffle of the top of magnetron sputtering base station seat is arranged in the baffle plate assembly
Structure snd size are different from the size of the baffle below magnetron sputtering target stand.
As a further improvement on the present invention, the baffle includes orthogonal first segment and second segment, and described first
The length of section is more than the length of second segment.
As a further improvement on the present invention, the clamping tabletting is made of graphite material.
Compared with prior art, beneficial effects of the present invention：
The present invention devises opposed magnetron sputtering target stand and magnetron sputtering base station seat, wherein, magnetron sputtering target stand is set at least
One.During the opposed target stand magnetic control sputtering device work of the present invention, the online plasma cleaning of substrate vacuum can be solved the problems, such as first,
With respect to the higher plasma gun of extra deployment cost is not required for use plasma source；Secondly the magnetic set at substrate rear
Field can effectively reduce bombardment of the electronics to substrate.
Brief description of the drawings
Fig. 1 is the structure diagram of an embodiment of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
The application principle of the present invention is explained in detail below in conjunction with the accompanying drawings.
As shown in Figure 1, a kind of opposed target stand magnetic control sputtering device, including at least magnetron sputtering target stand 1, magnetron sputtering base station
2, clamping tabletting 4 and baffle plate assembly；
The magnetron sputtering target stand 1 is installed on above vacuum chamber；When the number of magnetron sputtering target stand 1 is more than 2, each magnetron sputtering
The circumferentially uniformly arrangement of target stand 1；
The magnetron sputtering base station 2 is used to be installed on below vacuum chamber, it has folder between the magnetron sputtering target stand 1
Angle, the angle are acute angle；
The clamping tabletting 4 is arranged on the top surface of magnetron sputtering base station 2, for gripping substrate to be sputtered；
The baffle plate assembly includes multiple baffles 3, and one of baffle 3 is arranged on the top of magnetron sputtering base station 2, remaining gear
Plate 3 is respectively arranged on the corresponding lower section of magnetron sputtering target stand 1, for separating magnetron sputtering target stand 1 and magnetron sputtering base station seat 2, gear
The control of each baffle in plate component is mutually independent；Preferably, the baffle 3 includes orthogonal first segment and the
Two sections, the length of the first segment is more than the length of second segment, and the first segment and second segment are integrally formed, referring in Fig. 1,
Each baffle is L-shaped.
In a kind of specific embodiment of the present invention, the structure snd size of each baffle 3 in the baffle plate assembly are homogeneous
Together.
In another specific embodiment of the present invention, the top of magnetron sputtering base station 2 is arranged in the baffle plate assembly
Baffle 3 structure snd size it is different from the size of the baffle 3 arranged on the lower section of magnetron sputtering target stand 1.
In a kind of specific embodiment of the present invention, the clamping tabletting 4 is made of graphite material.
In conclusion the operation principle of the present invention is：
The opposed target stand magnetic control sputtering device of the present invention is installed in vacuum chamber, the magnetron sputtering target stand being placed in above vacuum chamber
For installing magnetic control spattering target, substrate material to be coated is placed on the magnetron sputtering base station seat that is placed in below vacuum chamber, and use
Clamping tabletting is pushed down.
Independent baffle is both provided with default conditions below each magnetron sputtering target stand, and baffle is all in closing shape
State, that is, block corresponding magnetron sputtering target stand.
During normal plated film, first in the case where keeping each baffle to be closed, first magnetron sputtering base station seat baffle is beaten
Open, and be powered and sputter substrate, play the effect of plasma cleaning, be then shut off power supply.Then magnetic control where opening substrate splashes
Penetrate the baffle of base station seat front end（I.e. so that there is no shelter between magnetic controlled sputtering target seat and magnetron sputtering base station seat）；Then start
Normal sputtering process.
Magnetron sputtering base station seat power supply can switch the magnetron sputtering target stand with being placed in top by contactor in above process
Shared shielding power supply, cost has been saved without plasma power supply is separately configured.On the other hand, since substrate material is placed
On magnetron sputtering base station seat, substrate plane vertical direction has the magnetic line of force to pass through, and when magnetron sputtering target stand works on the top, runs to
The electronics of substrate changes direction by magnetic field, so as to reduce bombardment of the electronics to substrate, is particularly suitable for electron bombardment sensitivity
Substrate material.
The basic principles, main features and the advantages of the invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (6)
- A kind of 1. opposed target stand magnetic control sputtering device, it is characterised in that：Including magnetron sputtering target stand, magnetron sputtering base station seat, folder Hold tabletting and baffle plate assembly；The magnetron sputtering target stand is installed on above vacuum chamber；The magnetron sputtering base station seat is installed on below vacuum chamber, it has angle, institute between the magnetron sputtering target stand It is acute angle to state angle；The clamping tabletting is arranged on the top surface of magnetron sputtering base station seat, for gripping substrate to be sputtered；The baffle plate assembly includes multiple baffles, and one of baffle is arranged on the top of magnetron sputtering base station seat, remaining baffle It is respectively arranged on below corresponding magnetron sputtering target stand, for separating magnetron sputtering target stand and magnetron sputtering base station seat.
- A kind of 2. opposed target stand magnetic control sputtering device according to claim 1, it is characterised in that：The opposed target stand magnetic control Sputter equipment includes at least one magnetron sputtering target stand, and each magnetron sputtering target stand is circumferentially uniformly arranged.
- A kind of 3. opposed target stand magnetic control sputtering device according to claim 1, it is characterised in that：In the baffle plate assembly The structure snd size all same of each baffle.
- A kind of 4. opposed target stand magnetic control sputtering device according to claim 1, it is characterised in that：Set in the baffle plate assembly In the baffle of the top of magnetron sputtering base station seat structure snd size and the baffle below the magnetron sputtering target stand size not Together.
- A kind of 5. opposed target stand magnetic control sputtering device according to claim 1, it is characterised in that：The baffle includes mutual Vertical first segment and second segment, the length of the first segment are more than the length of second segment.
- A kind of 6. opposed target stand magnetic control sputtering device according to claim 1, it is characterised in that：The clamping tabletting is by stone Ink material is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711477439.3A CN108018535B (en) | 2017-12-29 | 2017-12-29 | Magnetron sputtering device with opposite target seats |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711477439.3A CN108018535B (en) | 2017-12-29 | 2017-12-29 | Magnetron sputtering device with opposite target seats |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108018535A true CN108018535A (en) | 2018-05-11 |
| CN108018535B CN108018535B (en) | 2023-12-22 |
Family
ID=62072339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711477439.3A Active CN108018535B (en) | 2017-12-29 | 2017-12-29 | Magnetron sputtering device with opposite target seats |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108018535B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113249702A (en) * | 2021-07-07 | 2021-08-13 | 陛通半导体设备(苏州)有限公司 | Magnetron sputtering equipment for improving cleanliness of magnetron sputtering environment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100999814A (en) * | 2006-01-14 | 2007-07-18 | 鸿富锦精密工业（深圳）有限公司 | Multifunctional sputtering system and process |
| CN103849843A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Magnetron co-sputtering equipment with five target heads |
| US20160276583A1 (en) * | 2014-02-14 | 2016-09-22 | Canon Anelva Corporation | Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus |
| CN106435499A (en) * | 2016-09-29 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Magnetron-sputtering film coating machine |
| CN207727140U (en) * | 2017-12-29 | 2018-08-14 | 苏州求是真空电子有限公司 | A kind of opposed target stand magnetic control sputtering device |
-
2017
- 2017-12-29 CN CN201711477439.3A patent/CN108018535B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100999814A (en) * | 2006-01-14 | 2007-07-18 | 鸿富锦精密工业（深圳）有限公司 | Multifunctional sputtering system and process |
| CN103849843A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Magnetron co-sputtering equipment with five target heads |
| US20160276583A1 (en) * | 2014-02-14 | 2016-09-22 | Canon Anelva Corporation | Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus |
| CN106435499A (en) * | 2016-09-29 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Magnetron-sputtering film coating machine |
| CN207727140U (en) * | 2017-12-29 | 2018-08-14 | 苏州求是真空电子有限公司 | A kind of opposed target stand magnetic control sputtering device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113249702A (en) * | 2021-07-07 | 2021-08-13 | 陛通半导体设备(苏州)有限公司 | Magnetron sputtering equipment for improving cleanliness of magnetron sputtering environment |
| CN113249702B (en) * | 2021-07-07 | 2021-10-22 | 陛通半导体设备(苏州)有限公司 | Magnetron sputtering equipment for improving cleanliness of magnetron sputtering environment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108018535B (en) | 2023-12-22 |
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| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220221 Address after: 310024 room 414, building 3, Hejing business center, Gudang street, Xihu District, Hangzhou, Zhejiang Applicant after: Hangzhou bifanke Electronic Technology Co.,Ltd. Address before: 215300 Building 1, 232 Yuanfeng Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant before: SUZHOU ADVANCED VACUUM ELECTRONIC EQUIPMENT CO.,LTD. |
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