JP2020200525A - Cathode unit for magnetron sputtering apparatus - Google Patents

Abstract

To provide a cathode unit for a magnetron sputtering apparatus Sm capable of providing a good uniformity of a film thickness distribution and a good in-plane uniformity of a film quality in depositing a thin film on a substrate surface by a reactive sputtering.SOLUTION: A cathode unit CU includes a magnet unit 6 rotationally driven around a target center Tc as a rotation center. The magnet unit has a first magnet 61a annually arranged and a second magnet 61b surrounding the first magnet at a first distance D1 and applies an endless-shaped first stray magnetic field Mf1 in front of a sputtering surface 52. The cathode unit further includes a third magnet 61c which is annually arranged at a second distance D2 inside the first magnet so as to be configured that an endless-shaped second stray magnetic field Mf2 works in front of the sputtering surface inside the first stray magnetic field.SELECTED DRAWING: Figure 1

Description

The present invention relates to a cathode unit for a magnetron sputtering apparatus, and more specifically, to a cathode unit suitable for forming a predetermined thin film such as an oxide film or a nitride film by reactive sputtering by introducing a reaction gas.

For example, a metal such as aluminum or copper or a target made of an alloy containing these is sputtered, and the metal is applied to the surface of a substrate such as a silicon wafer with a good in-plane uniformity of ± 3% or less, more preferably ± 1%. A cathode unit for a magnetron sputtering apparatus used for forming a film or an alloy film is known, for example, in Patent Document 1. This includes a magnet unit that is arranged on the side opposite to the sputtering surface of the target having a circular contour matching the substrate and is rotationally driven with the target center as the rotation center. The magnet unit is a first magnet in which a plurality of magnet pieces are arranged without gaps on the main surface (target side surface) of a plate-shaped yoke, for example, along a circular or circularly deformed elliptical or heart-shaped contour. And a second magnet in which a plurality of magnet pieces having the same magnetization are arranged without a gap, which surrounds the first magnet at a predetermined interval, are provided with different polarities on the target side. Then, the leakage magnetic field, which is offset in one radial direction with respect to the target center and whose position where the vertical component of the magnetic field becomes zero closes endlessly, acts in front of the sputtering surface.

The cathode unit is attached to the vacuum chamber of the sputtering apparatus, a rare gas (sputtering gas) such as argon gas is introduced at a predetermined flow rate into the vacuum chamber in the vacuum atmosphere where the substrate exists, and DC power having a negative potential at the target. And input AC power of a predetermined frequency. Then, endless plasma is generated in front of the sputtered surface between the substrate and the sputtered surface of the target. Then, the target is sputtered by the ions of the sputtered gas ionized by plasma, and the sputtered particles scattered from the sputtered surface according to a predetermined cosine rule adhere to and accumulate on the substrate surface to form a predetermined thin film. At this time, the sputtered surface of the target is eroded so that the shape of the plasma is transferred, but by rotationally driving the magnet unit at a predetermined speed with the target center as the rotation center, good in-plane uniformity of film thickness is obtained. While forming a film on the surface of the substrate, the target can be eroded over almost the entire surface.

Here, when the target is an ITO target, for example, and an oxygen gas as a reaction gas is introduced at a predetermined flow rate together with a rare gas as a sputtering gas at the time of film formation, an ITO film is formed on the substrate surface by reactive sputtering. In-plane uniformity of the same film thickness as when forming a film or the like can be obtained. However, when the film quality of the formed thin film is evaluated by, for example, the specific resistance value, an annular region including the target center inside is generated in the substrate surface where the specific resistance value is relatively high, and the surface of the film quality is good. It turned out that internal uniformity could not be obtained. Therefore, the present inventor has conducted extensive research, and the region where the specific resistance value is high corresponds to the region where the constant leakage magnetic field inside the first magnet does not act, and in this region, the sputtered particles and oxygen gas We have come to find that the reactivity is locally reduced.

JP-A-2010-245296

The present invention has been made based on the above findings, and when a predetermined thin film is formed on the substrate surface by reactive sputtering, the in-plane film thickness is good while obtaining good film thickness distribution uniformity. An object of the present invention is to provide a cathode unit for a magnetron sputtering apparatus capable of obtaining uniformity.

In order to solve the above problems, the cathode unit for the magnetron sputtering apparatus of the present invention is arranged on the side opposite to the sputtering surface of the target installed in the vacuum chamber, and is rotationally driven with the center of rotation as the center of rotation. A magnet unit is provided, and the magnet unit has a first magnet arranged in an annular shape and a second magnet that surrounds the first magnet with a first interval by changing the polarity on the target side, from the center of the target. An offset first leakage magnetic field that closes endlessly at the position where the vertical component of the magnetic field becomes zero acts on the front of the sputter surface, and is arranged in a ring shape with a second interval inside the first magnet. It is characterized in that the three magnets are further provided by changing the polarity on the target side with the first magnet so that an endless second leakage magnetic field acts on the inside of the first leakage magnetic field in front of the sputter surface.

According to the above, the cathode unit is attached to the vacuum chamber of the sputtering apparatus, the sputtering gas is introduced into the vacuum chamber in the vacuum atmosphere where the substrate exists at a predetermined flow rate, and the DC power having a negative potential on the target or the predetermined frequency Turn on AC power. Then, an endless plasma (hereinafter referred to as "first plasma") is generated in front of the sputtered surface as in the conventional example, and another endless plasma (hereinafter referred to as "first plasma") is generated inside the first plasma. , "Second plasma") are generated substantially concentrically. Then, at the time of film formation, when a reaction gas such as oxygen gas is also introduced at a predetermined flow rate and a film is formed on the substrate surface by reactive sputtering, the reactivity between the sputtered particles and the reaction gas is improved by the second plasma. Good in-plane uniformity of film quality can be obtained.

Further, the presence of the second plasma expands the erosion region of the sputter surface toward the center side of the target, so that the usage efficiency of the target can be improved. Further, in the above-mentioned conventional example, in the region where the leakage magnetic field does not act, electrons are used. And secondary electrons acted on the substrate, but since the electrons and secondary electrons are trapped even in the second leakage magnetic field, the thermal damage to the substrate can be reduced. Moreover, since the electrons in the first plasma and the electrons in the second plasma are moving in opposite directions according to the polarities of the first magnet, the second magnet, and the third magnet on the target side, the first plasma And the stability of the second plasma is improved. When the second plasma is generated substantially concentrically inside the first plasma as described above, the scattering distribution of the sputtered particles scattered from the sputtered surface of the target changes, and the film thickness becomes uniform in the plane accordingly. Sexuality may be impaired. In such a case, for example, if the sputtering conditions such as the distance between the target sputtering surface and the substrate surface (so-called TS-to-TS distance is shortened) and the partial pressure of the sputtering gas during sputtering are appropriately set. The in-plane uniformity of the film thickness can be adjusted.

By the way, when the first magnet, the second magnet, and the third magnet are configured by, for example, a plurality of magnet pieces having the same magnetism arranged in a row along a predetermined contour without a gap, the first magnet is more than the first leakage magnetic field. 2 Leakage magnetic field The leakage magnetic field becomes weaker. When the target is sputtered in this state, the portion of the target facing the region where the plasma density is relatively high is preferentially eroded by the action of the first leakage magnetic field. When the distance between the target and the first magnet, the second magnet, or the third magnet (inter-TM distance) becomes longer due to the erosion of the target, the second leakage magnetic field acts and the plasma density is relatively low. In other words, the second plasma (that is, the plasma impedance is relatively high) may become unstable (that is, the plasma may be extinguished). Therefore, in the present invention, it is preferable to adopt a configuration further including a first moving means for moving at least the third magnet relative to the first magnet in a direction in which the third magnet is moved relative to the sputtered surface of the target. According to this, as the target erodes, for example, the third magnet is brought close to the sputtered surface of the target (that is, the distance between TMs between the target and the third magnet is locally shortened). By increasing the magnetic field strength of the two leakage magnetic fields, it is possible to prevent the second plasma from becoming unstable.

Further, the present invention further includes a second moving means for reciprocating the first magnet, the second magnet, and the third magnet integrally and parallel to the sputter surface along the direction in which the first leakage magnetic field is offset. Is preferable. According to this, the sputtered surface is eroded over the entire surface by moving the first magnet, the second magnet, and the third magnet at a predetermined cycle, or by reciprocating with a constant stroke during the film formation. It is advantageous because it can be used as an area and the utilization efficiency of the target can be further improved.

FIG. 6 is a schematic cross-sectional view of a sputtering apparatus including the cathode unit according to the embodiment of the present invention. Schematic plan view of the cathode unit as seen from the target side.

Hereinafter, with reference to the drawings, it is applied to a magnetron type sputtering apparatus capable of forming an ITO film on the surface of a substrate Sw having a circular contour such as a silicon wafer by reactive sputtering in which oxygen gas is also introduced and the target is an ITO target. The cathode unit CU of the embodiment of the present invention will be described by taking the above case as an example. In the following, the directions such as up and down are based on the installation posture of the sputtering apparatus shown in FIG.

With reference to FIG. 1, Sm is a magnetron-type sputtering apparatus including the cathode unit of the present embodiment. The sputtering apparatus Sm includes a vacuum chamber 1. An exhaust port 11 is opened in the vacuum chamber 1, and one end of an exhaust pipe 21 is connected to the vacuum chamber 1. The other end of the exhaust pipe 21 is connected to a vacuum pump 2 composed of a rotary pump, a cryopump, a turbo molecular pump, or the like so that the inside of the vacuum chamber 1 can be evacuated to a predetermined pressure. A gas introduction port 12 is also opened in the vacuum chamber 1, and one end of the gas introduction pipe 31 is connected to the vacuum chamber 1. The other end of the gas introduction pipe 31 communicates with a gas source (not shown) via flow rate adjusting valves 32a and 32b composed of a mass flow controller and the like, and argon gas (rare gas) and oxygen as sputter gas whose flow rate is controlled. The gas (reaction gas) can be introduced into the vacuum chamber 1.

A stage 4 is arranged below the vacuum chamber 1 via an insulator 41, and a substrate Sw is installed on the stage 4. Although not particularly illustrated, the stage 4 is composed of, for example, a metal base having a tubular contour and a chuck plate adhered to the upper surface of the base, and the substrate Sw is being formed by sputtering. Can be adsorbed and held. As for the structure of the electrostatic chuck, known ones such as a unipolar type and a bipolar type can be used, so further detailed description thereof will be omitted. Further, the base may include a passage for circulating a refrigerant and a heater so that the substrate Sw can be controlled to a predetermined temperature during film formation. The cathode unit CU of the present embodiment is detachably attached to the upper part of the vacuum chamber 1 so as to face the substrate Sw installed on the stage 4.

With reference to FIG. 2, the cathode unit CU is composed of an ITO-made target 5 and a magnet unit 6 arranged above the target 5. The target 5 is manufactured by a known method in a circular shape in a plan view according to the contour of the substrate Sw. The target 5 is attached to the backing plate 51 and attached to the upper part of the vacuum chamber 1 via the insulator 53 with the sputtering surface 52 facing downward. Further, a sputtering power source Ps having a known structure is connected to the target 5 so that DC power having a negative potential, pulse DC power, or high frequency power can be applied during film formation by sputtering. The magnet unit 6 arranged above the target 5 includes a first magnet 61a arranged in an annular shape having a substantially heart-shaped contour and a first interval D1 offset in one radial direction with respect to the target center Tc. The second magnet 61b surrounding the first magnet 61a and the third magnet 61c arranged in an annular shape with the second interval D2 inside the first magnet 61a are on the target 5 side (lower surface side thereof). Prepare by changing the polarity of each other. As the arrangement of the first magnet 61a and the second magnet 61b, which can obtain good uniformity of the film thickness distribution, known ones can be used, and further description thereof will be omitted.

The first magnet 61a and the second magnet 61b are arranged on the lower surface of the plate-shaped first yoke 62a having a heart shape that substantially matches the contour of the second magnet 61b. That is, by arranging a plurality of columnar magnet pieces 63 having the same magnetization on the lower surface (main surface) of the first yoke 62a without gaps along the heart-shaped contour, the first magnet 61a and the second magnet 61b And are configured. Further, an accommodating space 64 penetrating in the plate thickness direction is formed at a predetermined position of the first yoke 62a (see FIG. 1), and the accommodating space 64 has a heart-shaped plate-like first yoke similar to the first yoke 62a. Two yokes 62b are arranged. In this case, as will be described later, the second yoke 62b has a substantially Z-shaped vertical cross section so that the second rotation shaft can be connected and does not interfere with the first yoke 62a when it is moved up and down. There is. Then, on the lower surface (main surface) of the second yoke 62b, a plurality of columnar magnet pieces 63 having the same magnetization as described above are arranged in a row along the heart-shaped contour without gaps to form the third magnet 61c. ing. As a result, the first leakage magnetic field Mf1 offset in the radial direction with respect to the target center Tc and the position where the vertical component of the magnetic field becomes zero closes endlessly, and the vertical component of the magnetic field inside the first leakage magnetic field Mf1. The second leakage magnetic field Mf2, in which the position where becomes zero closes in an endless manner, acts below the sputter surface 52. In this case, since the number of magnet pieces 63 constituting the first magnet 61a, the second magnet 61b, and the third magnet 61c gradually decreases, the first magnet 61a and the second magnet 61b are in the same plane parallel to the sputter surface 52. In the state where the lower surface of the third magnet 61c is positioned, the magnetic field strength of the second leakage magnetic field Mf2 is weaker than that of the first leakage magnetic field Mf1.

The first yoke 62a is attached to the lower surface of the rotating plate 71 made of the same material. A hollow first rotating shaft 72 is connected to the rotating plate 71 so as to be aligned on a virtual axis extending in the vertical direction through the target center Tc. A first gear 72a is extrapolated to the first rotating shaft 72, and a second gear 72b meshes with the first gear 72a. Then, by rotationally driving the second gear 72b by the motor M1, the rotating plate 71 is rotationally driven at a predetermined speed via the first rotating shaft 72. Further, the rotating plate 71 is formed with a central opening (not shown) having a hole axis corresponding to the virtual axis and penetrating in the plate thickness direction, and the central opening is concentric in the first rotating shaft 72. The lower end of the solid second rotating shaft 73 arranged in the above is inserted and connected to the upper surface of the second yoke 62b.

The portion of the second rotary shaft 73 located in the first rotary shaft 72 is formed as a spline shaft portion (not shown) and engages with the ball spline nut 74 provided at a predetermined position in the first rotary shaft 72. There is. As a result, the second rotating shaft 73 is rotated in synchronization with the rotation of the first rotating shaft 72, and the first magnet 61a, the second magnet 61b, and the third magnet 61c are rotated around the target center Tc by the motor M1. Driven. Further, a portion of the second rotating shaft 73 protruding upward from the first rotating shaft 72 is formed as a threaded portion (not shown), and a ball screw nut 75 is screwed into the portion. Then, by rotationally driving the ball screw nut 75 by the motor M2, the second rotating shaft 73 moves up and down with a predetermined stroke in the vertical direction, and by extension, the third magnet 61c is moved up and down with respect to the first magnet 61a (target). It is possible to move relative to each other. In the present embodiment, parts such as the motor M2 and the ball screw nut 75 form the first moving means. The vertical movement stroke of the third magnet 61c is appropriately set according to the thickness of the target 5 when not in use. Hereinafter, the film formation of the ITO film using the sputtering apparatus Sm including the cathode unit CU of the present embodiment will be described.

After arranging the substrate Sw on the stage 4, the inside of the vacuum chamber 1 is evacuated to a predetermined pressure from the vacuum pump 2. When the inside of the vacuum chamber 1 reaches a predetermined pressure, argon gas and oxygen gas are introduced at a predetermined flow rate, and DC power having a negative potential, pulsed DC power, and high-frequency power are applied to the target 5 by the sputter power supply Ps. .. Then, an endless first plasma (not shown) is generated below the sputtering surface 52 by the first leakage magnetic field Mf1, and an endless second plasma (not shown) is substantially generated inside the first plasma. It occurs concentrically. At the same time, the motor M1 rotationally drives the first magnet 61a, the second magnet 61b, and the third magnet 61c around the center of the target at a predetermined speed. As a result, the target 5 is sputtered by the ions of the sputtered gas ionized by both the first and second plasmas, and the sputtered particles scattered from the sputtered surface 52 according to a predetermined cosine rule react with the oxygen gas on the upper surface of the substrate Sw. The ITO film is formed by adhering and accumulating. At this time, the reactivity between the sputtered particles scattered from the sputtered surface 52 by the second plasma and the reaction gas is improved, so that good in-plane uniformity of the film quality can be obtained. When the second plasma is generated substantially concentrically inside the first plasma as described above, the scattering distribution of the sputtered particles scattered from the sputtered surface 52 changes, and the in-plane uniformity of the film thickness is accompanied by this. May be impaired. In such a case, for example, if the sputtering conditions such as the distance between the TSs between the sputtering surface 52 of the target 5 and the upper surface of the substrate Sw and the partial pressure of the sputtering gas during sputtering are appropriately set, the film thickness is in-plane. The uniformity can be adjusted.

By the way, in the magnet unit 6, since the leakage magnetic field of the second leakage magnetic field Mf2 is weaker than that of the first leakage magnetic field Mf1, the first leakage magnetic field Mf1 acts to sputter the target 5 facing the region where the plasma density is relatively high. The portion of the surface 52 will be preferentially eroded. Then, when the distance between the TMs between the sputter surface 52 and the first magnet 61a, the second magnet 61b, or the third magnet 61c becomes longer due to the erosion of the target 5, the second leakage magnetic field Mf2 acts on the plasma. The second plasma, which has a relatively low density (in other words, a relatively high plasma impedance), may become unstable (that is, the plasma may be extinguished). In this case, the ball screw nut 75 is rotationally driven by the motor M2 to move the third magnet 61c relative to the first magnet 61a in a direction close to the sputter surface 52 via the second rotating shaft 73 ( That is, by increasing the magnetic field strength of the second leakage magnetic field Mf2 (by shortening the distance between the TMs of the third magnet 61c), it is possible to prevent the second plasma from becoming unstable.

Based on the above, if the ITO film is formed by the sputtering apparatus Sm provided with the cathode unit CU of the present embodiment, good in-plane uniformity of film quality can be obtained while obtaining good film thickness distribution uniformity. Becomes possible. Further, the use efficiency of the target 5 can be improved by expanding the erosion region of the sputtering surface 52 toward the target center Tc side due to the presence of the second plasma. In this case, the rotating plate 71 is provided with the linear motor M3 as the second moving means, and the first magnet 61a is provided in the radial direction (left-right direction in FIG. 2) as the direction in which the first leakage magnetic field Mf1 is offset. The entire cathode unit CU including the second magnet 61b and the third magnet 61c may be moved in parallel with the sputter surface 52 at a predetermined cycle, or may be reciprocated with a constant stroke during film formation. As a result, the erosion region can be expanded to the outer peripheral side of the target 5, and the utilization efficiency of the target 52 can be further improved. Further, in the above-mentioned conventional example, electrons and secondary electrons act on the substrate Sw in the region where the leakage magnetic field does not act, but since the electrons and secondary electrons are also trapped in the second leakage magnetic field Mf2, the substrate The heat damage of Sw can be reduced. Moreover, since the electrons in the first plasma and the electrons in the second plasma are moving in opposite directions according to the polarities of the first magnet 61a, the second magnet 61b, and the third magnet 61c on the target side. The stability of the first plasma and the second plasma is improved.

The following experiment was conducted to confirm the above effects. That is, the target 5 of the cathode unit CU is made of ITO having a diameter of 400 mm, and the first magnet 61a and the second magnet 61b are concentrically arranged in a heart shape at the first interval D1 as the magnet unit 6, such as aluminum and copper. When a metal film or alloy film is formed by sputtering a target made of a metal or an alloy containing these, an existing product manufactured by ULVAC can be formed with a good in-plane uniformity of a film thickness of ± 3% or less ( The third magnet 61c is further concentrically arranged in a heart shape at the second interval D2 inside the first magnet 61a of the conventional product) and the conventional cathode unit CU, and the TM distance of the third magnet 61c can be changed. The constructed product (invention product) was prepared and attached to the sputtering apparatus Sm, respectively, to form an ITO film on the surface of a silicon wafer Sw having a diameter of 300 mm. As the sputtering conditions, the distance between the target 5 and the silicon wafer Sw was set to 95 mm, the input power by the sputtering power supply Ps was set to 4.0 kW, the sputtering time was set to 25 sec, and the rotation speed of the magnet unit 6 was set to 30 rpm. Further, argon gas and oxygen gas were used as the sputtering gas, and the gas was introduced into the vacuum chamber 1 at a flow rate of 200 sccm of argon and 1 sccm of oxygen gas, and the partial pressure of the sputtering gas was set to 0.4 Pa during sputtering.

According to the above experiment, in the conventional product, the film thickness distribution of the ITO film after film formation is 100 nm ± 1.9%, which is the same as the film thickness distribution in the case of forming a metal film or an alloy film. Is obtained. On the other hand, looking at the distribution of the specific resistance value, it is 220 μΩm ± 10%, and an annular shape having a predetermined width in the radial direction, in which the resistance value is relatively high near the middle between the center of the silicon wafer Sw and the outer edge thereof. It was confirmed that a region of (that is, a region with low reactivity) was formed. On the other hand, in the invention product, when the first magnet 61a, the second magnet 61b and the third magnet 61c are located in the same plane parallel to the sputtering surface 52, the distribution of the specific resistance value of the ITO film after film formation As a result, it was 190 μΩm ± 5%, and it was confirmed that the in-plane uniformity of the specific resistance value could be improved. At this time, the film thickness distribution of the ITO film after the film formation was 100 nm ± 1.4%. Further, in the invention product, when film thickness is continuously formed on a plurality of substrates Sw, erosion of the sputtering surface 52 of the target 5 progresses as the integrated power to the target 5 increases (that is, the sputter surface 52 of the target 5 progresses. As a result, the film thickness distribution and resistivity distribution tended to worsen. Therefore, when the third magnet 61c was moved downward relative to the first magnet 61a with a predetermined stroke (the distance between TMs was shortened), the film thickness distribution of the ITO film after film formation was 100 nm ± 1. Looking at the resistivity distribution at 0.4%, it was 190 μΩm ± 5%, and it was confirmed that the in-plane uniformity was not impaired along with the film film distribution and the resistivity distribution.

Although the embodiments of the present invention have been described above, various modifications can be made without departing from the scope of the technical idea of the present invention. In the above embodiment, the case where the third magnet 61c is moved relative to the first magnet 61a in the vertical direction has been described as an example, but the first magnet 61a and the second magnet 61b are moved in the vertical direction with respect to the third magnet 61c. The first magnet 61a or the second magnet 61b may be configured to move relative to each other in the vertical direction.

In the above embodiment, the first magnet 61a, the second magnet 61b, and the third magnet 61c are described by arranging magnet pieces 63 having the same magnetism along the contour of the heart shape without gaps. The first magnet 61a, the second magnet 61b, and the third magnet are not limited to the above, as long as the in-plane uniformity of a predetermined film thickness can be obtained when a metal film or an alloy film is formed. The magnet 61c can be composed of an integral magnet, and the outline thereof may be a circular shape, an elliptical shape obtained by deforming the circular shape, or the like. Further, in consideration of the uniformity of the film quality distribution and the uniformity of the film thickness distribution, the contour of the third magnet 61c may be different from that of the first magnet 61a and the second magnet 61b. Further, the case where the first magnet 61a, the second magnet 61b, and the third magnet 61c use the magnet piece 63 having the same magnetism is described as an example, but the present invention is not limited to this, and the third magnet 61c As the magnet piece 63, one having a magnetism different from that of the first magnet 61a and the second magnet 61b may be used, and the leakage magnetic field of the second leakage magnetic field Mf2 may be appropriately adjusted.

Further, in the above embodiment, the case where the target 5 is ITO and the ITO film is formed on the surface of the substrate Sw by reactive sputtering in which oxygen gas is introduced has been described as an example, but the present invention is not limited to this, and IZO The present invention can also be widely applied when another oxide film such as a film or a nitride film such as TiN or SiN is formed by reactive sputtering.

CU ... cathode unit, D1 ... first interval, D2 ... second interval, M2 ... motor (first moving means), M3 ... linear motor (second moving means), Mf1 ... first leakage magnetic field, Mf2 ... second Leakage magnetic field, Sm ... Sputtering device, Tc ... Target center, 1 ... Vacuum chamber, 5 ... Target, 52 ... Sputtering surface, 6 ... Magnet unit, 61a ... 1st magnet, 61b ... 2nd magnet, 61c ... 3rd magnet, 75 ... Ball screw nut (first means of transportation).

Claims (3)

It is equipped with a magnet unit that is placed on the side opposite to the spatter surface of the target installed in the vacuum chamber and is rotationally driven around the center of rotation of the target.
A magnetic field in which the magnet unit has a first magnet arranged in an annular shape and a second magnet having a first interval and surrounding the first magnet with different polarities on the target side, offset from the center of the target. In the cathode unit for a magnetron sputtering device, in which the first leakage magnetic field that closes the position where the vertical component of is zero is infinitely closed in front of the sputtering surface.
A third magnet, which is arranged in an annular shape with a second interval inside the first magnet, is further provided by changing the polarity of the first magnet and the target side, and is endless in front of the sputtering surface inside the first leakage magnetic field. A cathode unit for a magnetron sputtering apparatus, which is configured to act on a second leakage magnetic field. The cathode unit for a magnetron sputtering apparatus according to claim 1, further comprising a first moving means for moving at least the third magnet relative to the first magnet in a direction in which the third magnet is close to and separated from the target sputtering surface. The claim is further provided with a second moving means for reciprocating the first magnet, the second magnet, and the third magnet integrally and parallel to the sputtering surface along the direction in which the first leakage magnetic field is offset. 1 or the cathode unit for the magnetron sputtering apparatus according to claim 2.

Images