201235497 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於用以在玻璃或矽晶圓等之基 上成膜特定之薄膜的濺鍍方法，特別是，係有關於 關於靶材之使用狀態（侵蝕狀態）或者是靶材之種 常將膜厚分布保持爲一定的濺鍍方法。 【先前技術】 當在半導體製造工程中而得到所期望之裝置構 係有著對於身爲應處理之基板的矽晶圓而進行成膜 ，在此種成膜工程中，從先前技術起，.便係使用有 置。 在上述濺鍍裝置中，係對於形成有真空氛圍之 而導入氬等之身爲惰性氣體的濺鍍氣體，並且，對 於欲在基板表面所形成之薄膜的組成而形成了的靶 藉由直流電源或者是高頻電源而投入特定之電力並 光放電，以形成電漿。而後，藉由使在電漿中所電 氬離子等之惰性氣體的離子與靶材衝突，而從靶材 之原子、分子放出，並使此些之濺鍍粒子附著、堆 板表面上，而進行成膜。又，亦週知有：在靶材之 面相背向之側處，配置使極性交互改變地而設置有 磁石的磁石單元，並藉由此磁石單元而在靶材之前 鍍面側）產生隧道狀之磁場，而將在靶材之前方而 的電子以及經由濺鍍所產生了的二次電子作捕捉， 板表面 能夠無 類而恆 造時， 之工程 濺鍍裝 真空腔 於因應 材，來 使其輝 離了的 使靶材 積在基 與濺鍍 複數之 方（濺 電離了 並藉由 -5- 201235497 此來提高靶材前方處之電子密度並將電漿密度提高（所謂 的磁控管型）的濺鍍方法。 在此種濺鍍裝置中，在靶材中之受到有上述磁場之影 響的區域處，靶材係會優先性地被濺鍍並逐漸被侵蝕。例 如，若是從放電之安定性或者是靶材的使用效率之提升等 的觀點來看，而使上述區域位置在靶材中央附近處，則濺 鍍時之靶材的侵蝕量，係會在該中央附近處而局部性的變 多。因此，隨著由靶材之濺鍍所進行的成膜之時間的增加 ，靶材表面之使用狀態會改變，靶材之濺鍍面和基板之間 的距離（以下，稱作^ τ-s間距離」）係會在靶材面內而 變化。 於此，磁石單元，通常，係以在一定之τ-s間距離下 而藉由特定種類且爲未使用之狀態的靶材來對於基板進行 成膜時，以使基板表面之膜厚分布涵蓋於基板全面而成爲 均等的方式來作設計。因此，若是如同上述一般而Τ-s間 距離有所改變，或者是對於靶材種類作變更，則伴隨於此 ，膜厚分布亦會改變。 因此，藉由專利文獻1，係週知有：在被設置在真空 腔內並將基板作保持之平台處，設置可自由進退地朝向靶 材作驅動之驅動機構，並使Τ-s間距離（或者是T-Μ (遮 罩）間距離）因應於靶材之積算電力來作改變（參考專利 文獻1之申請項8之記載）。然而，在此種機構中，係成 爲需要用以一面維持真空腔內之真空氛圍一面驅動平台之 伸縮管或者是驅動零件，而此種伸縮管或者是驅動零件等 -6- .201235497 ’ 一般係爲高價且耐久性爲差，另外，裝置構成亦會成爲 複雜。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2001-140069號公報 【發明內容】 〔發明所欲解決之課題〕 本發明，係有鑑於上述之問題點，而以提供一種：能 夠因應於靶材種類或者是靶材之使用狀態等的濺鍍條件， 來簡單地對於在基板上作了成膜時之膜厚分布作調整，並 且能夠使裝置之構成成爲簡單的低成本之濺鍍方法以及濺 鍍裝置一事，作爲課題。 〔用以解決課題之手段〕 爲了解決上述課題，本發明，係爲一種濺鍍方法，係 爲在真空腔內，對於靶材而將應處理之基板作對向配置， 並將濺鍍氣體導入至到達了特定之真空度的真空腔內，再 對於靶材投入特定之電力，而在真空腔內形成電漿，以對 於此靶材進行濺鍍，而在基板表面上成膜特定之薄膜的濺 鍍方法，其特徵爲：在滕鍍中，涵蓋基板全面地而作用有 垂直之靜磁場，因應於濺鍍條件，而使前述靜磁場之強度 作階段性的上升。 若依據本發明，則在濺鍍中，藉由涵蓋於基板全面地 201235497 而使垂直之靜磁場作用，係成爲能夠因應於成膜時之磁場 強度，來使從靶材而來的濺鍍粒子或者是在電漿中所電離 了的濺鍍粒子之離子，從相對於基板表面略直角之方向來 具備高指向性且具備強直進性地射入至此基板處並作附著 、堆積。於此，例如，若是在濺鍍中而靶材被作侵蝕，則 在靶材之全面上，Τ-S間（或者是T-Μ間）距離係會改變 。在此種情況時，係根據投入至靶材處之電力的積算電力 ，來使前述靜磁場之強度作階段性上升》藉由此，能夠因 應於靶材之侵蝕狀態（使用狀態），來對於在基板上成膜 時之膜厚分布進行調整。又，雖然在對於靶材種類作了變 更的情況時，從靶材所放出之濺鍍粒子的飛散分布亦可能. 有所改變，但是，係僅需使磁場強度改變，便能夠進行調 整。另外，於本發明中，所謂濺鍍條件，係設爲不僅是靶 材種類或者是靶材之侵蝕狀態，而亦包含有濺鍍時之真空 腔內的濺鍍氣體之分壓或者是對於靶材所投入之電力者。 在本發明中，若是藉由附設在真空腔中之至少1個的 電磁石，來產生前述靜磁場，並控制對於電磁石之線圈的 通電電流，來使前述靜磁場之強度作階段性上升，則爲理 想。若依據此構成，則係成爲不需要一面維持真空腔內之 真空氛圍一面驅動特定之零件等，相較於先前技術例，係 能夠使裝置構成成爲簡單》並且，相較於使用有伸縮管等 之零件的先前技術例，亦能夠將裝置之製造成本等降低。 另外’當將濺鍍條件設爲靶材之侵蝕量的情況時，係只要 根據對於靶材而投入電力時之積算電力，來對於前述通電 -8 - 201235497 電流作控制即可。 【實施方式】 以下，參考圖面，針對用以在玻璃或矽晶圓等之基 表面上成膜特定之薄膜的本發明之實施形態的濺鑛方法 說明。圖1中，SM，係爲可實施本發明之實施形態的 鏟方法之濺鍍裝置。濺鍍裝置SM，係具備有能夠形成 空氛圍之真空腔1，在真空腔1之頂板部處，係被安裝 陰極單元C。於以下，在圖1中，係將朝向真空處理室 之頂板部側的方向設爲「上」，並將朝向其之底部側的 向作爲「下」，來進行說明。 陰極單元C，係由靶材2和被配置在此靶材2之上 處的磁石單元3所構成。靶材2，係爲具備有較基板W 輪廓更大的表面積並且藉由週知之方法而形成爲正視呈 形或矩形者。另外，靶材2，係可因應於欲在應處理之 板W上所形成之薄膜而適宜作選擇，例如，係可設爲 、Al、Ti、Co、Ta、W製。靶材2，係在被裝著於省略 示之擋板上的狀態下，將其之濺鍍面朝向下方，並隔著 緣體I而被安裝於真空腔1之上部處。又，靶材2，係 連接於DC電源或高頻電源等之濺鍍電源E1處，並在 鍍中，對於靶材2而投入具有負的電位之電力。 被配置在靶材2之上方處的磁石單元3，係爲具備 在標靶2之濺鑛面21的下方空間處使磁場產生並在濺 時將在濺鍍面21之下方處的電漿密度提高之週知的閉 板 作 濺 真 有 1 方 方 之 圓 基 Cu 圖 絕 被 濺 有 鍍 磁 -9 - 201235497 場或者是尖形磁場構造者，於此，係省略詳細之說明。另 外，磁石單元3，係以在一定之Τ-S間距離下而藉由特定 種類且爲未使用之狀態的靶材來以特定條件（壓力、對於 靶材之投入電力等）而對於基板W進行成膜時，以使基 板表面之膜厚分布涵蓋於基板全面而成爲均等的方式來作 設計。在真空腔1內，係被配置有具備導電性之陽極遮罩 4。又，在真空腔1之底部，係與陰極單元C相對向地而 隔著絕緣構件51地被配置有平台5，並成爲將基板W作 定位保持。另外，雖然並未特別作圖示說明，但是，係亦 可設爲在平台5處連接高頻電源並對於基板W施加偏壓 之構造。 在真空腔1之側壁處，係被連接有將氬等之身爲稀有 氣體的濺鍍氣體作導入之氣體管6，此氣體管6,係透過 質量流控制器6a而與省略圖示之氣體源相通連。而，此 些之零件，係構成氣體導入手段，而能夠將被作了流量控 制之濺鍍氣體導入至真空腔1內。另外，係亦可更進而設 置與上述相同之構成的氣體導入手段，並構成爲能夠將氮 等之反應氣體導入並進行由反應性濺鍍所致之成膜。又， 在真空腔1之側壁處，由在環狀之軛71上捲繞導線7 2所 成的線圈7，係被設置在真空腔1之上下方向的略中央處 ，此些之零件，係構成電磁石。並且，係成爲能夠從電源 E2來對於線圈7作通電。 若是從電源E2而對於線圈7作通電，則因應於電流 之方向以及大小，例如，係以涵蓋靶材2之濺鍍面2 1以 -10- 201235497 及基板w之全面而使垂直之磁力線（磁通量）MF 之間隔來通過的方式，而產生朝向下方之垂直磁場 此，在靶材2之濺鍍時，從靶材而來之濺鍍粒子或 電漿中而電離之濺鍍粒子的離子，係並不會由於垂 之影響而失活地，來涵蓋基板W全面且從相對於 W表面而略直角之方向來作附著並堆積。另外，線 數，係並非被限定於上述者，而亦可爲複數。在設 之線圈的情況時，線圈相互之間的距離、導線之直 繞數等，例如係因應於靶材2之濺鏟面21的面積、 距離、成膜條件、電源E2之額定電流値或者是欲 磁場強度（高斯），來適宜作設定。 在真空腔1之底部處，係被連接有與由渦輪分 或是旋轉幫浦等所成之省略圖示的真空排氣裝置相 氣管8。上述濺鍍裝置SM，係具有具備著微電腦 列器等之週知的控制手段9，並成爲藉由控制手段 對於上述各電源E 1、E2之動作、質量流控制器6 a 或是真空排氣裝置之動作等作統籌管理。又，控制 ，係能夠對於已投入至靶材2中之電力的積算電力 ，並能夠因應於此來控制對於線圈7之通電電流。 接著，針對使用有上述濺鍍裝置SM之對於基^ 濺鍍方法作說明。首先，使真空排氣手段動作，並 真空腔1內真空抽氣至特定之真空度（例如，10_5 而將基板W安裝在平台5上。之後，藉由電源E2 線圏7作通電，並以涵蓋靶材2以及基板W全面 以特定 。藉由 者是在 直磁場 此基板 圈之個 置複數 徑或捲 τ-s間 產生的 子幫浦 通之排 或是序 9，來 之動作 手段9 作管理 反W的 預先將 Pa)， 而對於 而使朝 -11 - 201235497 向下方之垂直之磁力線MF以特定之間隔來通過的方式， 而產生垂直磁場。之後·’對於質量流控制器6a作控制， 而將氬氣（濺鍍氣體）以特定之流量來導入至真空腔1內 (濺鍍中之氬分壓，係爲0.05〜50Pa)，並藉由濺鍍電源 E1來對於靶材2投入具有負的電位之特定電力（1〜35 kW )而使其放電，以在真空腔1內形成電漿氛圍。藉由此， 受到涵蓋於基板W之全面而垂直地產生了的磁力線MF之 影響，藉由靶材2之濺鍍所產生了的濺鍍粒子或者是在電 漿中所電離了的濺鍍粒子之離子，係相對於基板W而從 略直角之方向來具備高指向性且具備強直進性地射入至此 基板W處並作附著、堆積。 另外，若是藉由上述條件而對於複數枚之基板W進 行成膜，則在靶材2中，於受到從磁石單元3而來之磁場 的影響之區域處，靶材2係優先性地被濺鍍並逐漸被侵蝕 (如同圖1中在靶材2處而以2點鍊線所示一般地被侵蝕 )。於此情況，T-S間距離係在靶材2面內而變化，其結 果，在基板W上作了成膜時之膜厚分布，係會因應於靶 材2之侵蝕狀態（亦即是使用時間）而逐漸改變。因此， 在本實施形態中，係設爲下述之構成：亦即是，藉由特定 之靶材2，而對於複數枚之基板W進行成膜，直到該靶材 2之壽命結束爲止，此時，係在每特定之積算電力（例如 2 00k Wh )處而測定膜厚分布，並且在此些之積算電力的 每一者處，求取出當在基板W全面上之膜厚分布成爲特 定之範圍（例如2%以內）時之線圏7的通電電流，再將 -12- 201235497 其預先記憶在控制手段9中》藉由此，藉由因應於靶材2 之積算電力、亦即是因應於侵蝕狀態，來僅使對於線圈7 之通電電流作改變，便能夠在直到靶材2之壽命結束爲止 的期間中，將在基板W全面上之膜厚分布保持於特定之 範圍（例如2%以內）內。 另外，對於線圈7之通電電流，係因應於靶材種類或 者是靶材之侵蝕狀態，而設定爲15〜30A之範圍內。若是 較1 5 A更低，則係有著無法使膜厚分布改變之問題，若是 超過3 0 A，則會產生使電漿變得不安定的問題。 接著，爲了對於以上之效果作確認，使用圖1中所示 之濺鍍裝置SM而進行了以下之各實驗。在實驗1中，作 爲靶材2，係使用高純度之鎢製靶材，並將基板W設爲0 3 0 0mm之矽晶圓，又，作爲濺鍍條件，係將T-S間距離設 爲60mm，將身爲濺鍍氣體之氬氣的導入量設爲150sccm ，並將從電源El所對於靶材2之投入電力設定爲4kW， 而一面將基板W加熱保持於200°C，一面以40nm之膜厚 而成膜了鎢膜（濺鍍時間爲1 7秒）。 圖2，係爲對於在濺鍍中，並不對線圈7作通電、和 將對於線圈7之通電電流設爲1 5 A、以及將對於線圈7之 通電電流設定爲3 0 A，而分別形成了鎢膜的情況時，於基 板之徑方向上的膜厚分布作展示之圖表。若依據此，則可 以得知，當並不對於線圈7進行通電的情況時（亦即是， 無垂直磁場），基板中央部之膜厚係爲薄，且膜厚係隨著 朝向基板之徑方向外側而逐漸變厚。因此，可以得知，若 -13- 201235497 是將通電電流設定爲1 5 A並進行成膜，則特別是基板中央 部之膜厚係增加，而膜厚分布之面內均一性係顯著的提升 。又，可以得知，若是使通電電流上升至30A並進行成膜 ，則特別是基板中央部之膜厚係有所增加。根據此，可以 確認到，藉由使通電電流改變，係能夠對於膜厚分布作控 制。 接著，在實驗2中，作爲靶材，係使用厚度6mm之 鎢靶材，並藉由與上述相同之條件，來對於基板進行了成 膜，直到壽命結束（1 400k Wh)爲止。此時，在實驗2中 ，於濺鍍開始之初始時，係將對於線圈7之通電電流設爲 0A，若是靶材之積算電力到達5 00k Wh，則將通電電流設 定爲15A，來一面使垂直磁場作用在基板上一面進行成膜 ，又，若是到達l〇〇〇kWh，則將通電電流設定爲30A，來 一面使垂直磁場作用在基板上一面進行成膜。另外，作爲 比較實驗，係藉由與上述相同之條件，來並不作用有垂直 磁場地而對於基板進行成膜，直到壽命結束（1 400kWh) 爲止。 圖3，係爲對於在藉由上述條件而對基板進行了成膜 時之相對於靶材之積算電力的基板之膜厚分布作展示的圖 表，圖3中，以實線所展示者，係爲實驗2之結果，又’ 以虛線所展示者，係爲比較實驗之結果。若依據此，則可 以得知，在比較實驗中，起初爲約1 . 5 %之膜厚分布，在 靶材之壽命結束的附近，係成爲約4%，而可得知係對於 膜厚分布之均一性有所損及。相對於此，在實驗2中’可 -14 - .201235497 以得知，藉由因應於特定之積算電力來使垂直磁場作用， 並且亦使其之強度改變，就算是在靶材2之壽命結束的附 近，亦能夠得到2.5 %之膜厚分布。 以上，雖係針對本發明之實施形態作了說明，但是， 本發明，係並不被限定於上述形態。在上述實施形態中， 雖係針對因應於靶材之侵蝕狀態來使對於線圈之通電電流 改變而將膜厚分布調節爲均一者爲例，來作了說明，但是 ，針對因應於靶材種類等之其他的濺鍍條件來使通電電流 改變並對於膜厚分布作控制者，係亦可作適用。又，在上 述實施形態中，雖係使用線圈來使垂直磁場產生，但是， 亦可設爲將線圏與永久磁石作組合並使磁場產生。 【圖式簡單說明】 〔圖1〕可實施本發明之實施形態的濺鍍方法之濺鍍 裝置的模式性剖面圖。 〔圖2〕對於展現有本發明之效果的實驗結果作展示 之圖表。 〔圖3〕對於展現有本發明之效果的其他實驗結果作 展不之圖表。 【主要元件符號說明】 SM :濺鑛裝置 1 :真空腔 2 :靶材 -15- 201235497 6 :氣體管 7 :線圈 C :陰極單元 El、E2 :電源 MF :磁力線 W :基板 -16-201235497 6. DISCLOSURE OF THE INVENTION: TECHNICAL FIELD The present invention relates to a sputtering method for forming a specific thin film on a glass or germanium wafer or the like, and more particularly, relating to a target The state of use (erosion state) or the type of target is often kept as a certain sputtering method. [Prior Art] When a desired device structure is obtained in a semiconductor manufacturing process, a film is formed for a germanium wafer which is a substrate to be processed, and in such a film forming process, from the prior art, It is used. In the above-described sputtering apparatus, a sputtering gas which is an inert gas such as argon is introduced into a vacuum atmosphere, and a target formed of a composition of a thin film to be formed on the surface of the substrate is supplied with a DC power source. Or a high-frequency power source is put into a specific power and light-discharged to form a plasma. Then, by causing the ions of the inert gas such as argon ions in the plasma to collide with the target, the atoms and molecules of the target are released, and the sputtered particles are attached to the surface of the stack. Film formation is carried out. Further, it is also known that a magnet unit in which a magnet is alternately changed in polarity is disposed on the side opposite to the surface of the target, and a magnetite unit is formed on the side of the target surface by the magnet unit. The magnetic field captures the electrons in front of the target and the secondary electrons generated by the sputtering. When the surface of the plate can be made without any kind, the engineering sputtering vacuum chamber is applied to the corresponding material. The detachment of the target accumulates on the base and the sputtering complex (spray ionization and increase the electron density in front of the target by -5 to 201235497 and increase the plasma density (so-called magnetron type) Sputtering method. In such a sputtering apparatus, at a region of the target that is affected by the magnetic field, the target is preferentially sputtered and gradually eroded. For example, if the discharge is stable From the viewpoint of improving the efficiency of use of the target or the like, and the position of the region is near the center of the target, the amount of erosion of the target at the time of sputtering is localized near the center. More. So, The increase in the film formation time by the sputtering of the target changes the state of use of the surface of the target, and the distance between the sputtering surface of the target and the substrate (hereinafter referred to as the distance between ^τ-s) The system changes in the plane of the target. Here, the magnet unit is usually formed by forming a substrate with a target of a specific type and an unused state at a certain distance between τ and s. In this case, the film thickness distribution on the surface of the substrate is designed to be uniform over the entire surface of the substrate. Therefore, if the distance between the Τ-s is changed as described above, or the type of the target is changed, Here, the film thickness distribution also changes. Therefore, Patent Document 1 is known to provide a platform that can be moved forward and backward toward the target while being placed in a vacuum chamber and holding the substrate. The driving mechanism and the distance between the Τ-s (or the distance between the T-Μ (mask)) are changed in accordance with the integrated electric power of the target (refer to the description of the application 8 of Patent Document 1). Among the kinds of institutions, The surface maintains the vacuum atmosphere in the vacuum chamber to drive the telescopic tube of the platform or the driving parts, and the telescopic tube or the driving parts are -6- .201235497 ' Generally, the price is high and the durability is poor. In addition, the device structure is also [Prior Art Document] [Patent Document 1] [Patent Document 1] JP-A-2001-140069 SUMMARY OF INVENTION [Problems to be Solved by the Invention] The present invention has been made in view of the above problems. It is possible to easily adjust the film thickness distribution when forming a film on a substrate in accordance with the sputtering conditions such as the type of the target or the state of use of the target, and to make the configuration of the device simple. A low-cost sputtering method and a sputtering apparatus are problems. [Means for Solving the Problem] In order to solve the above problems, the present invention is a sputtering method in which a target is used in a vacuum chamber. The substrate to be processed is disposed oppositely, and the sputtering gas is introduced into a vacuum chamber that reaches a specific degree of vacuum, and then the target is put into a specific a method of sputtering, in which a plasma is formed in a vacuum chamber to perform sputtering on the target, and a specific film is formed on the surface of the substrate, characterized in that, in the plating, the substrate is comprehensively acted upon. There is a vertical static magnetic field, and the intensity of the aforementioned static magnetic field is increased stepwise in response to the sputtering condition. According to the present invention, in the sputtering, the vertical static magnetic field is applied by covering the entire substrate 201235497, and the sputtering particles can be made from the target in accordance with the strength of the magnetic field at the time of film formation. Alternatively, the ions of the sputtered particles ionized in the plasma are provided with high directivity from a direction perpendicular to the surface of the substrate, and are incident on the substrate with strong directivity and adhered and deposited. Here, for example, if the target is eroded during sputtering, the Τ-S (or T-turn) distance system changes over the entire target. In this case, the intensity of the static magnetic field is increased stepwise according to the integrated electric power of the electric power input to the target, thereby being able to respond to the erosion state (usage state) of the target. The film thickness distribution at the time of film formation on the substrate was adjusted. Further, although the scattering distribution of the sputtered particles emitted from the target may be changed when the type of the target is changed, the adjustment may be performed only by changing the magnetic field strength. Further, in the present invention, the sputtering condition is set to include not only the type of the target but also the eroded state of the target, but also the partial pressure of the sputtering gas in the vacuum chamber at the time of sputtering or the target. The electricity invested by the material. In the present invention, when the static magnetic field is generated by at least one of the electromagnets attached to the vacuum chamber, and the current applied to the coil of the electromagnet is controlled to increase the intensity of the static magnetic field stepwise, ideal. According to this configuration, it is not necessary to drive a specific component or the like while maintaining the vacuum atmosphere in the vacuum chamber, and the device configuration can be simplified as compared with the prior art, and a telescopic tube or the like is used. The prior art example of the component can also reduce the manufacturing cost of the device and the like. In the case where the sputtering condition is the amount of erosion of the target, it is only necessary to control the current of the energization -8 - 201235497 based on the integrated electric power when the electric power is input to the target. [Embodiment] Hereinafter, a sputtering method for an embodiment of the present invention for forming a specific thin film on a base surface of a glass or a ruthenium wafer or the like will be described with reference to the drawings. In Fig. 1, SM is a sputtering apparatus which can carry out the shovel method of the embodiment of the present invention. The sputtering apparatus SM is provided with a vacuum chamber 1 capable of forming an air atmosphere, and a cathode unit C is attached to the ceiling portion of the vacuum chamber 1. In the following, in Fig. 1, the direction toward the top plate portion side of the vacuum processing chamber is referred to as "upper", and the direction toward the bottom side of the vacuum processing chamber is referred to as "lower". The cathode unit C is composed of a target 2 and a magnet unit 3 disposed above the target 2. The target 2 is provided with a surface area larger than that of the substrate W and formed into a front view shape or a rectangular shape by a known method. Further, the target 2 can be appropriately selected depending on the film to be formed on the sheet W to be treated, and for example, it can be made of Al, Ti, Co, Ta or W. The target 2 is attached to the upper portion of the vacuum chamber 1 via the edge body I while being attached to the shutter which is omitted. Further, the target 2 is connected to a sputtering power source E1 such as a DC power source or a high-frequency power source, and a power having a negative potential is applied to the target 2 during plating. The magnet unit 3 disposed above the target 2 has a plasma density which is generated at a space below the splash surface 21 of the target 2 and which will be below the sputtering surface 21 when splashed. The well-known closed plate is improved. There is a square circle of Cu. The figure is completely splashed with a magnetic plated -9 - 201235497 field or a pointed magnetic field structure. Here, detailed description is omitted. Further, the magnet unit 3 is a substrate W with a specific condition (pressure, input power to the target, etc.) with a target of a specific type and an unused state at a certain distance between Τ-S. When the film formation is performed, the film thickness distribution on the surface of the substrate is designed so as to cover the entire substrate and be uniform. In the vacuum chamber 1, an anode cover 4 having conductivity is disposed. Further, at the bottom of the vacuum chamber 1, the stage 5 is placed facing the cathode unit C with the insulating member 51 interposed therebetween, and the substrate W is positioned and held. Further, although not specifically illustrated, a configuration in which a high-frequency power source is connected to the stage 5 and a bias voltage is applied to the substrate W may be employed. At the side wall of the vacuum chamber 1, a gas tube 6 for introducing a sputtering gas which is a rare gas such as argon is introduced, and the gas tube 6 is passed through the mass flow controller 6a and a gas (not shown). The source is connected. Further, these components constitute a gas introduction means, and the sputtering gas which is controlled by the flow rate can be introduced into the vacuum chamber 1. In addition, a gas introduction means having the same configuration as described above may be further provided, and a reaction gas such as nitrogen may be introduced to form a film by reactive sputtering. Further, at the side wall of the vacuum chamber 1, a coil 7 formed by winding a wire 7 on the annular yoke 71 is disposed at a slightly center in the upper and lower directions of the vacuum chamber 1, and these parts are Forming an electromagnet. Further, it is possible to energize the coil 7 from the power source E2. If the coil 7 is energized from the power source E2, the vertical magnetic field lines are formed in accordance with the direction and magnitude of the current, for example, by covering the sputtering surface 21 of the target 2 with -10-201235497 and the substrate w. The magnetic flux MF passes through the vertical magnetic field, and the ions of the sputtered particles are ionized from the sputtering particles or the plasma during the sputtering of the target 2, The system is not inactivated due to the influence of the sag, and covers the substrate W in a comprehensive manner and adheres and accumulates in a direction perpendicular to the W surface. Further, the number of lines is not limited to the above, but may be plural. In the case of the coil, the distance between the coils, the number of straight turns of the wires, and the like are, for example, due to the area, distance, film forming condition, rated current of the power source E2, or the rated current of the power source E2 of the target 2 It is the magnetic field strength (Gauss) that is suitable for setting. At the bottom of the vacuum chamber 1, a vacuum exhaust gas phase pipe 8 which is omitted from the illustration of a turbine or a rotary pump is connected. The sputtering apparatus SM has a known control means 9 including a microcomputer stringer, and is operated by the control means for the respective power sources E1, E2, the mass flow controller 6a, or the vacuum exhaust. The operation of the device is managed as a whole. Further, the control is capable of integrating the electric power that has been input into the target 2, and can control the energizing current to the coil 7 in response thereto. Next, a description will be given of a sputtering method using the above-described sputtering apparatus SM. First, the vacuum exhaust means is operated, and the vacuum chamber 1 is vacuum-extracted to a specific degree of vacuum (for example, 10_5 to mount the substrate W on the stage 5. After that, the power supply E2 is energized by the line 圏7, and Covering the target 2 and the substrate W are all specific, by means of a sub-pulse or a sequence 9 generated between a complex magnetic field or a volume τ-s of the substrate in a direct magnetic field. In order to manage the inverse W, Pa) is preliminarily, and a vertical magnetic field is generated in such a manner that the vertical magnetic lines of force MF toward the lower -11 - 201235497 pass at a specific interval. After that, 'the mass flow controller 6a is controlled, and argon gas (sputtering gas) is introduced into the vacuum chamber 1 at a specific flow rate (the partial pressure of argon in the sputtering is 0.05 to 50 Pa), and borrowed A specific electric power (1 to 35 kW) having a negative potential is applied to the target 2 by the sputtering power source E1 to discharge it to form a plasma atmosphere in the vacuum chamber 1. Thereby, the sputter particles generated by the sputtering of the target 2 or the sputtered particles ionized in the plasma are affected by the magnetic flux MF generated by the full and vertical of the substrate W. The ions are provided with high directivity from a direction of a right angle with respect to the substrate W, and are incident on the substrate W with strong straightness and adhered and deposited. Further, when a plurality of substrates W are formed by the above-described conditions, the target 2 is preferentially splashed in the target 2 in a region affected by the magnetic field from the magnet unit 3. The plating is gradually eroded (as in Figure 1 at the target 2 and generally eroded as indicated by the 2-point chain). In this case, the distance between the TSs changes in the plane of the target 2, and as a result, the film thickness distribution at the time of film formation on the substrate W is in response to the erosion state of the target 2 (that is, the use time). ) and gradually change. Therefore, in the present embodiment, a configuration is adopted in which a plurality of substrates W are formed by a specific target 2 until the life of the target 2 is completed. At the time of each specific integrated power (for example, 200 00 Wh), the film thickness distribution is measured, and at each of the integrated powers, the film thickness distribution on the substrate W is determined to be specific. In the range (for example, within 2%), the current of the line 圏7 is further stored in the control means 9 by -12-201235497, whereby the power is calculated by the integration of the target 2, that is, the response is In the erosive state, only the current applied to the coil 7 is changed, and the film thickness distribution over the entire substrate W can be maintained within a specific range (for example, 2%) until the end of the life of the target 2. Within). Further, the current applied to the coil 7 is set to be in the range of 15 to 30 A depending on the type of the target or the state of erosion of the target. If it is lower than 1 5 A, there is a problem that the film thickness distribution cannot be changed. If it exceeds 30 A, there is a problem that the plasma becomes unstable. Next, in order to confirm the above effects, the following experiments were carried out using the sputtering apparatus SM shown in Fig. 1. In Experiment 1, as the target 2, a high-purity tungsten target was used, and the substrate W was set to a 0100 mm wafer, and as a sputtering condition, the distance between TS was set to 60 mm. The introduction amount of the argon gas as the sputtering gas was set to 150 sccm, and the input power from the target 2 of the power source El was set to 4 kW, and the substrate W was heated and maintained at 200 ° C while being 40 nm. The film thickness was formed into a tungsten film (sputtering time was 17 seconds). 2 is a view showing that, in the sputtering, the coil 7 is not energized, and the energizing current for the coil 7 is set to 15 A, and the energizing current for the coil 7 is set to 3 0 A, respectively. In the case of a tungsten film, the film thickness distribution in the radial direction of the substrate is shown as a graph. According to this, it can be understood that when the coil 7 is not energized (that is, there is no vertical magnetic field), the film thickness at the center portion of the substrate is thin, and the film thickness is along the diameter toward the substrate. It gradually thickens toward the outside. Therefore, it can be seen that when the current is set to 1 5 A and the film formation is performed in the period of 13-201235497, the film thickness at the center portion of the substrate is increased, and the in-plane uniformity of the film thickness distribution is remarkably improved. . Further, it can be seen that when the current is increased to 30 A and film formation is performed, the film thickness at the center portion of the substrate is increased. From this, it was confirmed that the film thickness distribution can be controlled by changing the energization current. Next, in Experiment 2, a tungsten target having a thickness of 6 mm was used as a target, and the substrate was formed by the same conditions as described above until the end of life (1 400 k Wh). At this time, in Experiment 2, the current for the coil 7 was set to 0 A at the beginning of the sputtering start, and when the integrated power of the target reached 500 00 Wh, the energization current was set to 15 A. The vertical magnetic field acts on the substrate to form a film, and if it reaches l 〇〇〇 kWh, the current is set to 30 A, and a vertical magnetic field is applied to the substrate to form a film. Further, as a comparative experiment, the substrate was formed into a film without applying a vertical magnetic field under the same conditions as described above until the end of life (1,400 kWh). 3 is a graph showing a film thickness distribution of a substrate on which electric power is integrated with respect to a target when a substrate is formed by the above-described conditions, and FIG. 3 is a solid line. For the results of Experiment 2, the results shown by the dotted line are the results of comparative experiments. According to this, it can be seen that in the comparative experiment, the film thickness distribution of about 1.5% at the beginning is about 4% in the vicinity of the end of the life of the target, and it can be known that the film thickness distribution is Uniformity has been compromised. On the other hand, in Experiment 2, '14-.201235497, it is known that the vertical magnetic field is acted upon by the specific integrated electric power, and the intensity thereof is also changed, even at the end of the life of the target 2. In the vicinity, it is also possible to obtain a film thickness distribution of 2.5%. Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. In the above-described embodiment, the film thickness distribution is adjusted to be uniform in response to the erosion state of the target, and the film thickness distribution is adjusted to be uniform. However, depending on the type of the target, etc. Other sputtering conditions may be used to change the energization current and control the film thickness distribution. Further, in the above embodiment, the coil is used to generate the vertical magnetic field. However, the coil may be combined with the permanent magnet to generate a magnetic field. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a sputtering apparatus which can perform a sputtering method according to an embodiment of the present invention. Fig. 2 is a graph showing the results of experiments showing the effects of the present invention. Fig. 3 is a graph showing the results of other experiments showing the effects of the present invention. [Main component symbol description] SM: Splashing device 1 : Vacuum chamber 2 : Target -15- 201235497 6 : Gas tube 7 : Coil C : Cathode unit El, E2 : Power supply MF : Magnetic force line W : Substrate -16-