CN108018535B - Magnetron sputtering device with opposite target seats - Google Patents
Magnetron sputtering device with opposite target seats Download PDFInfo
- Publication number
- CN108018535B CN108018535B CN201711477439.3A CN201711477439A CN108018535B CN 108018535 B CN108018535 B CN 108018535B CN 201711477439 A CN201711477439 A CN 201711477439A CN 108018535 B CN108018535 B CN 108018535B
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- CN
- China
- Prior art keywords
- magnetron sputtering
- seat
- base seat
- baffle plate
- baffle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 230000001154 acute effect Effects 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 239000007770 graphite material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims 1
- 238000009501 film coating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- 239000007769 metal material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an opposite target seat magnetron sputtering device, which comprises a magnetron sputtering target seat, a magnetron sputtering base seat, a clamping pressing sheet and a baffle plate assembly; the magnetron sputtering target seat is arranged above the vacuum chamber; the magnetron sputtering base seat is arranged below the vacuum chamber, an included angle is formed between the magnetron sputtering base seat and the magnetron sputtering target seat, and the included angle is an acute angle; the clamping pressing sheet is arranged on the top surface of the magnetron sputtering base seat and used for clamping and fixing a substrate to be sputtered; the baffle assembly comprises a plurality of baffles, one baffle is arranged above the magnetron sputtering base seat, and the other baffles are respectively arranged below the corresponding magnetron sputtering target seats and used for separating each target seat from the magnetron sputtering base seat. The invention can realize the on-line plasma cleaning function of the substrate material and reduce the bombardment of electrons on the substrate.
Description
Technical Field
The invention belongs to the field of magnetron sputtering, and particularly relates to a magnetron sputtering device with an opposite target seat.
Background
When some metal materials are coated on the surface by magnetron sputtering, an oxide layer is formed on the surface when the metal materials are stored in the atmosphere, so that a coating film with better bonding force is difficult to obtain. Conventionally, a plasma gun is arranged in a sputtering device, and the price of the plasma gun is high, and a corresponding control power supply is required to be arranged.
Besides on-line cleaning, some high polymer materials are easy to react under electron bombardment, so that the materials are damaged. In this case, the electrons emitted to the substrate must be blocked by a scheme, and a conventional scheme includes collecting the electrons to some extent by using a grounded metal mesh.
Disclosure of Invention
In order to solve the problems, the invention provides a magnetron sputtering device with an opposite target seat, which can realize an on-line plasma cleaning function on a substrate material and reduce bombardment of electrons on the substrate.
The technical aim is achieved, and the technical effects are achieved by the following technical scheme:
the magnetron sputtering device comprises a magnetron sputtering target seat, a magnetron sputtering base seat, a clamping pressing sheet and a baffle plate assembly;
the magnetron sputtering target seat is arranged above the vacuum chamber;
the magnetron sputtering base seat is arranged below the vacuum chamber, an included angle is formed between the magnetron sputtering base seat and the magnetron sputtering target seat, and the included angle is an acute angle;
the clamping pressing sheet is arranged on the top surface of the magnetron sputtering base seat and used for clamping and fixing a substrate to be sputtered;
the baffle assembly comprises a plurality of baffles, one baffle is arranged above the magnetron sputtering base seat, and the other baffles are respectively arranged below the corresponding magnetron sputtering target seat and used for separating the magnetron sputtering target seat from the magnetron sputtering base seat.
As a further improvement of the present invention, the opposing-backing plate magnetron sputtering apparatus includes at least one magnetron sputtering backing plate, each magnetron sputtering backing plate being uniformly arranged along the circumferential direction.
As a further improvement of the invention, each baffle in the baffle assembly is identical in structure and size.
As a further improvement of the present invention, the structure and the size of the baffle plate arranged above the magnetron sputtering base seat in the baffle plate assembly are different from those of the baffle plate arranged below the magnetron sputtering target seat.
As a further development of the invention, the baffle comprises a first section and a second section perpendicular to each other, the length of the first section being greater than the length of the second section.
As a further improvement of the invention, the clamping press sheet is made of graphite material.
Compared with the prior art, the invention has the beneficial effects that:
the invention designs a magnetron sputtering target seat and a magnetron sputtering base seat which are opposite, wherein at least one magnetron sputtering target seat is arranged. When the magnetron sputtering device with the opposite target seats works, the problem of vacuum on-line plasma cleaning of the substrate can be solved, and compared with a plasma source, a plasma gun with higher cost is not required to be additionally arranged; and secondly, the magnetic field arranged at the rear of the substrate can effectively reduce the bombardment of electrons on the substrate.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The principle of application of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the magnetron sputtering device with the opposite target seats comprises at least a magnetron sputtering target seat 1, a magnetron sputtering base seat 2, a clamping pressing sheet 4 and a baffle plate assembly;
the magnetron sputtering target seat 1 is arranged above the vacuum chamber; when the number of the magnetron sputtering target seats 1 is more than 2, the magnetron sputtering target seats 1 are uniformly distributed along the circumference;
the magnetron sputtering base station 2 seat is used for being arranged below the vacuum chamber, an included angle is formed between the magnetron sputtering base station 2 seat and the magnetron sputtering target seat 1, and the included angle is an acute angle;
the clamping pressing sheet 4 is arranged on the top surface of the base of the magnetron sputtering base station 2 and is used for clamping and fixing a substrate to be sputtered;
the baffle assembly comprises a plurality of baffles 3, wherein one baffle 3 is arranged above a magnetron sputtering base seat 2, the rest baffles 3 are respectively arranged below a corresponding magnetron sputtering target seat 1 and are used for separating the magnetron sputtering target seat 1 and the magnetron sputtering base seat 2, and the control of each baffle in the baffle assembly is mutually independent; preferably, the baffle 3 includes a first section and a second section perpendicular to each other, the length of the first section is greater than that of the second section, and the first section and the second section are integrally formed, and each baffle is L-shaped as shown in fig. 1.
In one embodiment of the invention, each baffle 3 in the baffle assembly is identical in structure and size.
In another embodiment of the present invention, the structure and the size of the baffle plate 3 disposed above the magnetron sputtering base 2 seat in the baffle plate assembly are different from those of the baffle plate 3 disposed below the magnetron sputtering target seat 1.
In one embodiment of the invention, the clamping press 4 is made of graphite material.
In summary, the working principle of the invention is as follows:
the magnetron sputtering device with the opposite target seats is arranged in a vacuum chamber, the magnetron sputtering target seats arranged above the vacuum chamber are used for installing magnetron sputtering targets, and substrate materials to be coated are placed on the magnetron sputtering base seats arranged below the vacuum chamber and pressed by clamping pressing sheets.
Independent baffles are arranged below each magnetron sputtering target seat in a default state, and the baffles are in a closed state, namely, the corresponding magnetron sputtering target seats are blocked.
During normal film plating, firstly, under the condition that each baffle is kept in a closed state, the magnetron sputtering base seat baffle is firstly opened, and the substrate is sputtered by electrifying, so that the effect of plasma cleaning is achieved, and then the power supply is turned off. Then opening a baffle plate at the front end of the magnetron sputtering base seat where the substrate is positioned (namely, a shielding object is not arranged between the magnetron sputtering target seat and the magnetron sputtering base seat); then the normal sputtering process is started.
In the working procedure, the magnetron sputtering base seat power supply can be switched with the magnetron sputtering target seat arranged above to share the sputtering power supply through the contactor, so that the plasma power supply does not need to be configured independently, and the cost is saved. On the other hand, as the substrate material is placed on the magnetron sputtering base seat, magnetic force lines pass through the substrate in the vertical direction, and electrons running to the substrate are changed in direction by a magnetic field when the upper magnetron sputtering target seat works, so that the bombardment of the electrons on the substrate is reduced, and the magnetron sputtering base seat is particularly suitable for substrate materials sensitive to electron bombardment.
The foregoing has shown and described the basic principles and main features of the present invention and the advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (4)
1. An opposed target holder magnetron sputtering device is characterized in that: comprises a magnetron sputtering target seat, a magnetron sputtering base seat, a clamping pressing sheet and a baffle plate assembly;
the magnetron sputtering target seat is arranged above the vacuum chamber;
the magnetron sputtering base seat is arranged below the vacuum chamber, an included angle is formed between the magnetron sputtering base seat and the magnetron sputtering target seat, and the included angle is an acute angle;
the clamping pressing sheet is arranged on the top surface of the magnetron sputtering base seat and used for clamping and fixing a substrate to be sputtered;
the baffle plate assembly comprises a plurality of baffle plates, one baffle plate is arranged above the magnetron sputtering base seat, and the other baffle plates are respectively arranged below the corresponding magnetron sputtering target seats and used for separating the magnetron sputtering target seats from the magnetron sputtering base seat;
during normal film coating, firstly, under the condition that each baffle is kept in a closed state, the magnetron sputtering base seat baffle is firstly opened, and the substrate is sputtered by electrifying, so that the effect of plasma cleaning is achieved, and then the power supply is turned off; then opening a baffle plate at the front end of the magnetron sputtering base seat where the substrate is positioned, so that no shielding object exists between the magnetron sputtering target seat and the magnetron sputtering base seat; then starting a normal sputtering process;
the magnetron sputtering device of the opposite target seats comprises at least one magnetron sputtering target seat, and the magnetron sputtering target seats are uniformly distributed along the circumferential direction;
the structure and the size of each baffle plate in the baffle plate assembly are the same.
2. The magnetron sputtering apparatus of claim 1 wherein: the structure and the size of the baffle plate arranged above the magnetron sputtering base seat in the baffle plate assembly are different from those of the baffle plate arranged below the magnetron sputtering target seat.
3. The magnetron sputtering apparatus of claim 1 wherein: the baffle comprises a first section and a second section which are perpendicular to each other, and the length of the first section is longer than that of the second section.
4. The magnetron sputtering apparatus of claim 1 wherein: the clamping pressing piece is made of graphite materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711477439.3A CN108018535B (en) | 2017-12-29 | 2017-12-29 | Magnetron sputtering device with opposite target seats |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711477439.3A CN108018535B (en) | 2017-12-29 | 2017-12-29 | Magnetron sputtering device with opposite target seats |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108018535A CN108018535A (en) | 2018-05-11 |
| CN108018535B true CN108018535B (en) | 2023-12-22 |
Family
ID=62072339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711477439.3A Active CN108018535B (en) | 2017-12-29 | 2017-12-29 | Magnetron sputtering device with opposite target seats |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108018535B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113249702B (en) * | 2021-07-07 | 2021-10-22 | 陛通半导体设备(苏州)有限公司 | Magnetron sputtering equipment for improving cleanliness of magnetron sputtering environment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100999814A (en) * | 2006-01-14 | 2007-07-18 | 鸿富锦精密工业（深圳）有限公司 | Multifunctional sputtering system and process |
| CN103849843A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Magnetron co-sputtering equipment with five target heads |
| CN106435499A (en) * | 2016-09-29 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Magnetron-sputtering film coating machine |
| CN207727140U (en) * | 2017-12-29 | 2018-08-14 | 苏州求是真空电子有限公司 | A kind of opposed target stand magnetic control sputtering device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6095806B2 (en) * | 2014-02-14 | 2017-03-15 | キヤノンアネルバ株式会社 | Tunnel magnetoresistive element manufacturing method and sputtering apparatus |
-
2017
- 2017-12-29 CN CN201711477439.3A patent/CN108018535B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100999814A (en) * | 2006-01-14 | 2007-07-18 | 鸿富锦精密工业（深圳）有限公司 | Multifunctional sputtering system and process |
| CN103849843A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Magnetron co-sputtering equipment with five target heads |
| CN106435499A (en) * | 2016-09-29 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Magnetron-sputtering film coating machine |
| CN207727140U (en) * | 2017-12-29 | 2018-08-14 | 苏州求是真空电子有限公司 | A kind of opposed target stand magnetic control sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108018535A (en) | 2018-05-11 |
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| PB01 | Publication | ||
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| TA01 | Transfer of patent application right |
Effective date of registration: 20220221 Address after: 310024 room 414, building 3, Hejing business center, Gudang street, Xihu District, Hangzhou, Zhejiang Applicant after: Hangzhou bifanke Electronic Technology Co.,Ltd. Address before: 215300 Building 1, 232 Yuanfeng Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant before: SUZHOU ADVANCED VACUUM ELECTRONIC EQUIPMENT CO.,LTD. |
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