CN107946471A - 一种基于硅纳米线阵列的异质结光伏电池及其制备方法 - Google Patents
一种基于硅纳米线阵列的异质结光伏电池及其制备方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 189
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 189
- 239000010703 silicon Substances 0.000 title claims abstract description 189
- 239000002070 nanowire Substances 0.000 title claims abstract description 94
- 238000002360 preparation method Methods 0.000 title claims abstract description 49
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims abstract description 41
- 239000002131 composite material Substances 0.000 claims abstract description 36
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims abstract description 20
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 18
- 229920002873 Polyethylenimine Polymers 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000004332 silver Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 30
- 238000000137 annealing Methods 0.000 claims description 25
- 238000004528 spin coating Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 238000004073 vulcanization Methods 0.000 claims description 10
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 238000000280 densification Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 238000002242 deionisation method Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- FSTTULJGKHXEHB-UHFFFAOYSA-N [Si]=O.F Chemical compound [Si]=O.F FSTTULJGKHXEHB-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 238000006701 autoxidation reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Crystallography & Structural Chemistry (AREA)
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108417719A (zh) * | 2018-05-04 | 2018-08-17 | 苏州宝澜环保科技有限公司 | 一种硅基核壳结构光伏电池及其制备方法 |
CN108539027A (zh) * | 2018-05-07 | 2018-09-14 | 苏州宝澜环保科技有限公司 | 一种有机无机杂化太阳能电池及其制备方法 |
CN108597986A (zh) * | 2018-05-02 | 2018-09-28 | 厦门大学深圳研究院 | 一种基于预氧化处理的硅纳米线阵列的制备方法 |
CN108767119A (zh) * | 2018-06-22 | 2018-11-06 | 苏州宝澜环保科技有限公司 | 一种有机无机杂化光伏电池及其制备方法 |
CN108847449A (zh) * | 2018-06-21 | 2018-11-20 | 苏州宝澜环保科技有限公司 | 一种新型异质结光伏电池及其制备方法 |
CN108847428A (zh) * | 2018-06-08 | 2018-11-20 | 苏州宝澜环保科技有限公司 | 一种基于硅纳米线阵列的太阳能电池及其制备方法 |
CN108878656A (zh) * | 2018-06-22 | 2018-11-23 | 苏州宝澜环保科技有限公司 | 一种太阳能电池及其制备方法 |
CN109346606A (zh) * | 2018-09-30 | 2019-02-15 | 苏州钱正科技咨询有限公司 | 一种新型杂化光伏电池及其制备方法 |
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CN102148332A (zh) * | 2010-11-26 | 2011-08-10 | 北京化工大学 | 半导体纳米线基有机/无机复合太阳能电池的制备方法 |
CN102263204A (zh) * | 2011-07-20 | 2011-11-30 | 苏州大学 | 一种有机-无机杂化太阳能电池及其制备方法 |
CN104979421A (zh) * | 2014-04-11 | 2015-10-14 | 中国科学院大连化学物理研究所 | 一种叠层太阳能电池 |
CN105140319A (zh) * | 2015-06-23 | 2015-12-09 | 北京大学深圳研究生院 | 一种薄膜太阳能电池及其制备方法 |
CN105720113A (zh) * | 2015-12-10 | 2016-06-29 | 北京大学深圳研究生院 | 一种用于太阳能电池的背电极和太阳能电池 |
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2017
- 2017-11-28 CN CN201711221172.1A patent/CN107946471B/zh active Active
Patent Citations (5)
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CN102148332A (zh) * | 2010-11-26 | 2011-08-10 | 北京化工大学 | 半导体纳米线基有机/无机复合太阳能电池的制备方法 |
CN102263204A (zh) * | 2011-07-20 | 2011-11-30 | 苏州大学 | 一种有机-无机杂化太阳能电池及其制备方法 |
CN104979421A (zh) * | 2014-04-11 | 2015-10-14 | 中国科学院大连化学物理研究所 | 一种叠层太阳能电池 |
CN105140319A (zh) * | 2015-06-23 | 2015-12-09 | 北京大学深圳研究生院 | 一种薄膜太阳能电池及其制备方法 |
CN105720113A (zh) * | 2015-12-10 | 2016-06-29 | 北京大学深圳研究生院 | 一种用于太阳能电池的背电极和太阳能电池 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108597986A (zh) * | 2018-05-02 | 2018-09-28 | 厦门大学深圳研究院 | 一种基于预氧化处理的硅纳米线阵列的制备方法 |
CN108417719A (zh) * | 2018-05-04 | 2018-08-17 | 苏州宝澜环保科技有限公司 | 一种硅基核壳结构光伏电池及其制备方法 |
CN108539027A (zh) * | 2018-05-07 | 2018-09-14 | 苏州宝澜环保科技有限公司 | 一种有机无机杂化太阳能电池及其制备方法 |
CN108539027B (zh) * | 2018-05-07 | 2021-04-27 | 苏州宝澜环保科技有限公司 | 一种有机无机杂化太阳能电池及其制备方法 |
CN108847428B (zh) * | 2018-06-08 | 2020-07-10 | 海门名驰工业设计有限公司 | 一种基于硅纳米线阵列的太阳能电池及其制备方法 |
CN108847428A (zh) * | 2018-06-08 | 2018-11-20 | 苏州宝澜环保科技有限公司 | 一种基于硅纳米线阵列的太阳能电池及其制备方法 |
CN108847449A (zh) * | 2018-06-21 | 2018-11-20 | 苏州宝澜环保科技有限公司 | 一种新型异质结光伏电池及其制备方法 |
CN108847449B (zh) * | 2018-06-21 | 2021-11-02 | 江苏日御光伏新材料科技有限公司 | 一种新型异质结光伏电池及其制备方法 |
CN108767119A (zh) * | 2018-06-22 | 2018-11-06 | 苏州宝澜环保科技有限公司 | 一种有机无机杂化光伏电池及其制备方法 |
CN108878656A (zh) * | 2018-06-22 | 2018-11-23 | 苏州宝澜环保科技有限公司 | 一种太阳能电池及其制备方法 |
CN108878656B (zh) * | 2018-06-22 | 2021-11-23 | 江苏日御光伏新材料科技有限公司 | 一种太阳能电池及其制备方法 |
CN109346606A (zh) * | 2018-09-30 | 2019-02-15 | 苏州钱正科技咨询有限公司 | 一种新型杂化光伏电池及其制备方法 |
CN109346606B (zh) * | 2018-09-30 | 2022-11-15 | 新优(宁波)智能科技有限公司 | 一种杂化光伏电池及其制备方法 |
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