CN107394013A - 一种硅锗黑磷烯pin异质结太阳能电池的制备方法 - Google Patents
一种硅锗黑磷烯pin异质结太阳能电池的制备方法 Download PDFInfo
- Publication number
- CN107394013A CN107394013A CN201710616116.1A CN201710616116A CN107394013A CN 107394013 A CN107394013 A CN 107394013A CN 201710616116 A CN201710616116 A CN 201710616116A CN 107394013 A CN107394013 A CN 107394013A
- Authority
- CN
- China
- Prior art keywords
- type silicon
- black phosphorus
- phosphorus alkene
- preparation
- sige
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 150000001336 alkenes Chemical class 0.000 title claims abstract description 20
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 239000002070 nanowire Substances 0.000 claims abstract description 28
- -1 black phosphorus alkene Chemical class 0.000 claims abstract description 26
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical class [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000002242 deionisation method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 3
- 239000002803 fossil fuel Substances 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供了一种硅锗黑磷烯PIN异质结太阳能电池的制备方法。该方法包括：清洗N型硅基底，在N型硅基底中制备N型硅纳米线阵列，然后在N型硅纳米线阵列上依次形成本征非晶锗层、P型黑磷烯层以及透明导电层，最后在N型硅基底的背面形成背电极并在透明导电层上形成上电极。本发明的制备方法简单，硅纳米线线阵列的设置提高了该太阳能电池对太阳光的吸收效率，黑磷烯作为新型二维半导体材料，与N型硅纳米线线阵列以及本征非晶锗层形成PIN异质结，可以有效的进行光电转换，且径向结构的设置，便于电子空穴对的分离与传输，进一步提高了该太阳能电池的光电转换效率。
Description
技术领域
本发明涉及太阳能电池技术领域，具体涉及一种硅锗黑磷烯PIN异质结太阳能电池的制备方法。
背景技术
工业革命以来，随着工业化的发展和进步，对能源的需求也急剧增加，其中石化燃料是最主要的能源材料。然而地球上的石化燃料能源总储藏量有限，且为不可再生能源，因而全球面临着严峻的能源形势。同时石化燃料的使用过程中释放出大量的有毒气体和二氧化碳气体，造成严重的环境污染和温室效应，给人类的生存环境造成了前所未有的巨大灾难。人们已经强烈意识到石化能源的使用所带来的负面影响的严重性。因此“改变能源结构，保护地球”的提议已得到全球各个国家的一致认可。只有可再生能源的大规模利用以替代传统石化能源，才能促进人类社会的可持续发展。近年来，太阳能、风能和地热等新型可再生能源引起了人们的重视。与传统的占主导地位的石化能源相比，太阳能最大的优势在于其取之不尽，用之不竭，而且在使用过程中不会破坏生态平衡、污染环境。因此，太阳能是一种环境友好的绿色可再生能源。如果深究石化燃料的根源，它本质上是数亿万年前太阳辐射到地球上的一部分能源被储存在古生物体内，经沧海桑田的变化而演化成今天地球上的石化能源。太阳能电池（又称为光伏电池）可以将光能转换为电能，且转换过程中不需要任何机械运动的辅助或影响环境的燃烧过程，而成为最有潜力的太阳能的利用方式。
黑磷烯作为一种新型的二维纳米，它是一种具有金属光泽的晶体，可由白磷或红磷转化而来，黑磷烯具有直接半导体带隙，且表现出与层数相关的特性，单层黑磷的电子迁移率为10000cm2/Vs，还具有非常高的漏电流调制率，使得其在未来的纳米电子器件（例如场效应晶体管、光电元件、气体传感器及太阳能电池等领域的器件）中的应用有很大潜力，引起了人们的广泛关注。
发明内容
本发明的目的是克服上述现有技术的不足，提供一种硅锗黑磷烯PIN异质结太阳能电池的制备方法。该方法简单易行，且制备的太阳能电池具有优异的光电转换效率。
为实现上述目的，一种硅锗黑磷烯PIN异质结太阳能电池的制备方法，该方法包括：清洗N型硅基底，在N型硅基底中制备N型硅纳米线阵列，然后在N型硅纳米线阵列上依次形成本征非晶锗层、P型黑磷烯层以及透明导电层，最后在N型硅基底的背面形成背电极并在透明导电层上形成上电极。
作为优选，所述的清洗N型硅基底的步骤包括：将N型硅基底依次在丙酮、乙醇、去离子水中超声清洗5-30分钟；然后置入浓H2SO4：H2O2混合溶液中加温至90-120℃保持30-80分钟，然后用去离子水冲洗干净并用氮气枪吹干，备用。
作为优选，所述的在N型硅基底中制备N型硅纳米线阵列的步骤包括：利用干法刻蚀或湿法刻蚀在N型硅基底中制备N型硅纳米线阵列。
作为优选，所述湿法刻蚀的步骤包括：将N型硅基底浸没在含有4.8M氢氟酸和0.02M硝酸银的水溶液中，室温下反应20-50分钟，将刻蚀过的N型硅基底取出后，清洗干净，得到N型硅纳米线阵列。
作为优选，形成本征非晶锗层的步骤包括：利用PECVD法在N型硅纳米线阵列上沉积厚度为20-100纳米的本征非晶锗层。
作为优选，形成P型黑磷烯层的步骤包括：利用液相剥离法形成含有黑磷烯的溶液，在本征非晶锗层上旋涂含有黑磷烯的溶液，得到厚度为20-150纳米的P型黑磷烯层。
作为优选，形成透明导电层的步骤包括：通过溅射法或蒸镀法在P型黑磷烯层上形成氧化铟锡或铝掺杂氧化锌作为透明导电层，所述透明导电层的厚度为100-200纳米。
作为优选，形成上电极的步骤包括：通过溅射法或蒸镀法在透明导电层上形成栅电极作为上电极。
作为优选，形成背电极的步骤包括：通过溅射法或蒸镀法在N型硅基底的背面形成背电极，所述背电极的厚度为50-200纳米
本发明的有益效果如下：本发明的制备方法简单，硅纳米线线阵列的设置提高了该太阳能电池对太阳光的吸收效率，黑磷烯作为新型二维半导体材料，与N型硅纳米线线阵列以及本征非晶锗层形成PIN异质结，可以有效的进行光电转换，且径向结构的设置，便于电子空穴对的分离与传输，进一步提高了该太阳能电池的光电转换效率。
附图说明
图1-6为本发明的硅锗黑磷烯PIN异质结太阳能电池制备方法的流程图。
具体实施方式
参见图1-6，本发明首先提供了一种硅锗黑磷烯PIN异质结太阳能电池的制备方法，具体包括如下步骤：
参见图1，提供一N型硅基底2，并对N型硅基底2进行清洗；
参见图2，利用干法刻蚀或湿法刻蚀在N型硅基底2中制备N型硅纳米线阵列3。
参见图3，利用PECVD法在N型硅纳米线阵列3上沉积厚度为20-100纳米的本征非晶锗层4；
参见图4，利用液相剥离法形成含有黑磷烯的溶液，在本征非晶锗层5上旋涂含有黑磷烯的溶液，得到厚度为20-150纳米的P型黑磷烯层5；
参见图5，通过溅射法或蒸镀法在P型黑磷烯层5上形成氧化铟锡或铝掺杂氧化锌作为透明导电层6，所述透明导电层的厚度为100-200纳米
参见图6，通过溅射法或蒸镀法在透明导电层6上形成栅电极作为上电极7，并通过溅射法或蒸镀法在N型硅基底2的背面形成背电极1，所述背电极的厚度为50-200纳米。
实施例1：
一种硅锗黑磷烯PIN异质结太阳能电池的制备方法，具体包括如下步骤：
首先，将N型硅基底依次在丙酮、乙醇、去离子水中超声清洗20分钟；然后置入浓H2SO4：H2O2混合溶液中加温至110℃保持1小时，然后用去离子水冲洗干净并用氮气枪吹干，备用。
接着，将N型硅基底浸没在含有4.8M氢氟酸和0.02M硝酸银的水溶液中，室温下反应20-50分钟，将刻蚀过的N型硅基底取出后，清洗干净，得到N型硅纳米线阵列，通过控制反应时间，使得N型硅纳米线阵列的单个硅纳米线的长度为0.5-1微米，所述单个硅纳米线的直径为50-100纳米，相邻硅纳米线的间距为200-500纳米。
接着，利用PECVD法在N型硅纳米线阵列上沉积厚度为20-100纳米的本征非晶锗层。
接着，利用液相剥离法形成含有黑磷烯的溶液，首先将白磷在1000-1200Pa大气压下加热到220-230℃，得到黑磷块体，然后将黑磷块体浸入吡咯烷酮有机溶剂中，通过超声、离心以及分散处理，得到含有黑磷烯的溶液，在本征非晶锗层上通过依次或多次旋涂含有黑磷烯的溶液，得到厚度为70纳米的P型黑磷烯层。
接着，通过溅射法或蒸镀法在P型黑磷烯层上形成氧化铟锡或铝掺杂氧化锌作为透明导电层，所述透明导电层的厚度为150纳米。
接着，形成上电极的步骤包括：通过溅射法或蒸镀法在透明导电层上形成栅电极作为上电极，并通过溅射法或蒸镀法在N型硅基底的背面形成背电极，所述背电极的厚度为100纳米，得到如图6所示的硅锗黑磷烯PIN异质结太阳能电池。
本发明的制备方法简单，硅纳米线线阵列的设置提高了该太阳能电池对太阳光的吸收效率，黑磷烯作为新型二维半导体材料，与N型硅纳米线线阵列以及本征非晶锗层形成PIN异质结，可以有效的进行光电转换，且径向结构的设置，便于电子空穴对的分离与传输，进一步提高了该太阳能电池的光电转换效率。
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。
Claims (9)
1.一种硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：该方法包括：清洗N型硅基底，在N型硅基底中制备N型硅纳米线阵列，然后在N型硅纳米线阵列上依次形成本征非晶锗层、P型黑磷烯层以及透明导电层，最后在N型硅基底的背面形成背电极并在透明导电层上形成上电极。
2.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：所述的清洗N型硅基底的步骤包括：将N型硅基底依次在丙酮、乙醇、去离子水中超声清洗5-30分钟；然后置入浓H2SO4：H2O2混合溶液中加温至90-120℃保持30-80分钟，然后用去离子水冲洗干净并用氮气枪吹干，备用。
3.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：所述的在N型硅基底中制备N型硅纳米线阵列的步骤包括：利用干法刻蚀或湿法刻蚀在N型硅基底中制备N型硅纳米线阵列。
4.根据权利要求3所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：所述湿法刻蚀的步骤包括：将N型硅基底浸没在含有4.8M氢氟酸和0.02M硝酸银的水溶液中，室温下反应20-50分钟，将刻蚀过的N型硅基底取出后，清洗干净，得到N型硅纳米线阵列。
5.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：形成本征非晶锗层的步骤包括：利用PECVD法在N型硅纳米线阵列上沉积厚度为20-100纳米的本征非晶锗层。
6.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：形成P型黑磷烯层的步骤包括：利用液相剥离法形成含有黑磷烯的溶液，在本征非晶锗层上旋涂含有黑磷烯的溶液，得到厚度为20-150纳米的P型黑磷烯层。
7.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：形成透明导电层的步骤包括：通过溅射法或蒸镀法在P型黑磷烯层上形成氧化铟锡或铝掺杂氧化锌作为透明导电层，所述透明导电层的厚度为100-200纳米。
8.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：形成上电极的步骤包括：通过溅射法或蒸镀法在透明导电层上形成栅电极作为上电极。
9.根据权利要求1所述的硅锗黑磷烯PIN异质结太阳能电池的制备方法，其特征在于：形成背电极的步骤包括：通过溅射法或蒸镀法在N型硅基底的背面形成背电极，所述背电极的厚度为50-200纳米。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710616116.1A CN107394013B (zh) | 2017-07-26 | 2017-07-26 | 一种硅锗黑磷烯pin异质结太阳能电池的制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710616116.1A CN107394013B (zh) | 2017-07-26 | 2017-07-26 | 一种硅锗黑磷烯pin异质结太阳能电池的制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107394013A true CN107394013A (zh) | 2017-11-24 |
| CN107394013B CN107394013B (zh) | 2019-02-01 |
Family
ID=60341082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710616116.1A Active CN107394013B (zh) | 2017-07-26 | 2017-07-26 | 一种硅锗黑磷烯pin异质结太阳能电池的制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107394013B (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994119A (zh) * | 2017-11-28 | 2018-05-04 | 佛山市宝粤美科技有限公司 | 一种有机无机杂化太阳能电池及其制备方法 |
| CN108417666A (zh) * | 2018-03-02 | 2018-08-17 | 苏州宝澜环保科技有限公司 | 一种高效率硅基光伏电池及其制造方法 |
| CN108514887A (zh) * | 2018-04-04 | 2018-09-11 | 中山大学 | 一种空心纳米颗粒二氧化钛/黑磷烯光热催化剂及其制备方法与应用 |
| CN109742177A (zh) * | 2018-12-24 | 2019-05-10 | 北京科技大学 | 具有周期性应变的范德华异质结型光电探测器及制备方法 |
| CN109908464A (zh) * | 2019-04-16 | 2019-06-21 | 北京师范大学 | 一种生物可降解的硅纳米针注射器及其应用 |
| CN112071924A (zh) * | 2020-08-04 | 2020-12-11 | 深圳市奥伦德元器件有限公司 | 一种红外探测器及其制备方法 |
| CN113394302A (zh) * | 2021-04-28 | 2021-09-14 | 东南大学 | 一种基于不同类黑磷材料的太阳能电池及制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| CN102157577A (zh) * | 2011-01-31 | 2011-08-17 | 常州大学 | 纳米硅/单晶硅异质结径向纳米线太阳电池及制备方法 |
| CN103296123A (zh) * | 2013-05-15 | 2013-09-11 | 合肥工业大学 | P-型碳量子点/n-型硅纳米线阵列异质结太阳能电池及其制备方法 |
| CN105679861A (zh) * | 2016-01-20 | 2016-06-15 | 浙江大学 | 一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法 |
| CN105789346A (zh) * | 2016-04-13 | 2016-07-20 | 黄广明 | 一种基于硅纳米线的太阳能电池 |
| CN106409687A (zh) * | 2016-11-30 | 2017-02-15 | 中国科学院金属研究所 | 一种将纯净超薄二维材料置于堆垛顶层的方法 |
-
2017
- 2017-07-26 CN CN201710616116.1A patent/CN107394013B/zh active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| CN102157577A (zh) * | 2011-01-31 | 2011-08-17 | 常州大学 | 纳米硅/单晶硅异质结径向纳米线太阳电池及制备方法 |
| CN103296123A (zh) * | 2013-05-15 | 2013-09-11 | 合肥工业大学 | P-型碳量子点/n-型硅纳米线阵列异质结太阳能电池及其制备方法 |
| CN105679861A (zh) * | 2016-01-20 | 2016-06-15 | 浙江大学 | 一种表面等离子增强的二维材料/半导体异质结太阳能电池及其制备方法 |
| CN105789346A (zh) * | 2016-04-13 | 2016-07-20 | 黄广明 | 一种基于硅纳米线的太阳能电池 |
| CN106409687A (zh) * | 2016-11-30 | 2017-02-15 | 中国科学院金属研究所 | 一种将纯净超薄二维材料置于堆垛顶层的方法 |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994119B (zh) * | 2017-11-28 | 2020-11-03 | 义乌市牛尔科技有限公司 | 一种有机无机杂化太阳能电池及其制备方法 |
| CN107994119A (zh) * | 2017-11-28 | 2018-05-04 | 佛山市宝粤美科技有限公司 | 一种有机无机杂化太阳能电池及其制备方法 |
| CN108417666A (zh) * | 2018-03-02 | 2018-08-17 | 苏州宝澜环保科技有限公司 | 一种高效率硅基光伏电池及其制造方法 |
| CN108417666B (zh) * | 2018-03-02 | 2019-11-19 | 新昌县鼎瑞科技有限公司 | 一种高效率硅基光伏电池及其制造方法 |
| CN108514887A (zh) * | 2018-04-04 | 2018-09-11 | 中山大学 | 一种空心纳米颗粒二氧化钛/黑磷烯光热催化剂及其制备方法与应用 |
| CN108514887B (zh) * | 2018-04-04 | 2021-01-22 | 中山大学 | 一种空心纳米颗粒二氧化钛/黑磷烯光热催化剂及其制备方法与应用 |
| CN109742177A (zh) * | 2018-12-24 | 2019-05-10 | 北京科技大学 | 具有周期性应变的范德华异质结型光电探测器及制备方法 |
| CN109742177B (zh) * | 2018-12-24 | 2020-06-26 | 北京科技大学 | 具有周期性应变的范德华异质结型光电探测器及制备方法 |
| CN109908464A (zh) * | 2019-04-16 | 2019-06-21 | 北京师范大学 | 一种生物可降解的硅纳米针注射器及其应用 |
| CN112071924A (zh) * | 2020-08-04 | 2020-12-11 | 深圳市奥伦德元器件有限公司 | 一种红外探测器及其制备方法 |
| CN112071924B (zh) * | 2020-08-04 | 2022-04-01 | 深圳市奥伦德元器件有限公司 | 一种红外探测器及其制备方法 |
| CN113394302A (zh) * | 2021-04-28 | 2021-09-14 | 东南大学 | 一种基于不同类黑磷材料的太阳能电池及制备方法 |
| CN113394302B (zh) * | 2021-04-28 | 2022-09-02 | 东南大学 | 一种基于不同类黑磷材料的太阳能电池及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107394013B (zh) | 2019-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107394013B (zh) | 一种硅锗黑磷烯pin异质结太阳能电池的制备方法 | |
| CN102299206B (zh) | 一种异质结太阳电池及其制备方法 | |
| CN103296123B (zh) | P-型碳量子点/n-型硅纳米线阵列异质结太阳能电池及其制备方法 | |
| CN201966219U (zh) | 一种n型硅太阳能电池 | |
| CN101369610A (zh) | 一种新型结构硅纳米线太阳能电池 | |
| CN107946466B (zh) | 钙钛矿型太阳能电池及其pedot:pss层的修饰方法 | |
| CN102254963A (zh) | 一种石墨烯/硅柱阵列肖特基结光伏电池及其制造方法 | |
| CN103346214B (zh) | 一种硅基径向同质异质结太阳电池及其制备方法 | |
| CN103928541A (zh) | 一种具有立体微结构阵列的太阳能电池 | |
| CN104465844A (zh) | 一种MoS2/Si p-n结太阳能电池器件及其制备方法 | |
| CN103346260A (zh) | 有机薄膜钝化的有机-无机杂化太阳能电池及其制备方法 | |
| CN107895760A (zh) | 一种硅纳米线阵列异质结太阳能电池及其制备方法 | |
| CN105280818B (zh) | 一种稳定的平面异质结钙钛矿太阳能电池及其制备方法 | |
| CN104851940A (zh) | 一种在柔性衬底上制备硅纳米线阵列的方法 | |
| CN103346200A (zh) | 玻璃基板及其制造方法和薄膜太阳能电池的制造方法 | |
| CN107093649B (zh) | 一种hjt光伏电池的制备方法 | |
| CN108878594B (zh) | 一种硅异质结光伏电池及其制造方法 | |
| CN106449850B (zh) | 一种高效硅基异质结双面电池及其制备方法 | |
| CN205723556U (zh) | 一种n型ibc太阳能电池结构 | |
| CN102522505B (zh) | 无机与有机混合太阳能电池 | |
| CN104638031A (zh) | 基于GaN纳米线阵列的太阳能电池及其制备方法 | |
| CN110905723A (zh) | 一种具有分形界面结构的新型风力发电机 | |
| CN114038924A (zh) | 一种基于rie等离子刻蚀制绒的背接触异质结太阳电池 | |
| CN210156405U (zh) | 具有氢退火tco导电膜的异质结电池结构 | |
| CN109192798B (zh) | P型单晶硅hit光伏电池及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230805 Address after: Room 1203, No. 2 Houkenanli, Haicang District, Xiamen City, Fujian Province, 361000 Patentee after: Xiamen Luan Chuang Technology Co.,Ltd. Address before: 226600 Huanghai Avenue, Hai'an County Economic Development Zone, Nantong City, Jiangsu Province Patentee before: COMTEC SOLAR (JIANGSU) Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231225 Address after: No. 19 Wangqiao Village, Jianming Village, Letu Town, Mengcheng County, Bozhou City, Anhui Province, 233500 Patentee after: Wang Xibao Address before: Room 1203, No. 2 Houkenanli, Haicang District, Xiamen City, Fujian Province, 361000 Patentee before: Xiamen Luan Chuang Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240130 Address after: 213000, No. 12 Ganjiang Road, Chunjiang Street, Xinbei District, Changzhou City, Jiangsu Province Patentee after: Changzhou polar Solar Power Co.,Ltd. Country or region after: China Address before: No. 19 Wangqiao Village, Jianming Village, Letu Town, Mengcheng County, Bozhou City, Anhui Province, 233500 Patentee before: Wang Xibao Country or region before: China |