CN107946367A - 一种薄膜晶体管的制作方法及薄膜晶体管 - Google Patents
一种薄膜晶体管的制作方法及薄膜晶体管 Download PDFInfo
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- CN107946367A CN107946367A CN201711160298.2A CN201711160298A CN107946367A CN 107946367 A CN107946367 A CN 107946367A CN 201711160298 A CN201711160298 A CN 201711160298A CN 107946367 A CN107946367 A CN 107946367A
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Abstract
本发明公开了一种薄膜晶体管的制作方法及薄膜晶体管,该制作方法包括:提供一衬底基板;在衬底基板上形成多晶硅构成的有源层;在有源层上形成具有预设本征张应力的第一栅绝缘层。由于在本发明的技术方案中,受第一栅绝缘层预设本征张应力的作用,有源层中多晶硅的晶格尺寸会发生变化,从而可有效提高薄膜晶体管的载流子迁移率。由此可见,本发明的技术方案在不增加额外工艺或结构的前提下,通过设置第一栅绝缘层的本征张应力进一步提高了薄膜晶体管的载流子迁移率。
Description
技术领域
本发明涉及半导体显示技术领域,尤其涉及一种薄膜晶体管的制作方法及薄膜晶体管。
背景技术
在各种显示装置中,例如液晶电视、智能手机、平板电脑、数码相机、自助存取款机等,薄膜晶体管(Thin Film Transistor,TFT)一般用作开关元件来控制像素,或是用作驱动元件来驱动像素。
按照有源层的硅薄膜性质,薄膜晶体管通常可分为非晶硅(a-Si)薄膜晶体管和多晶硅(Poly-Si)薄膜晶体管两种。与非晶硅薄膜晶体管相比较,多晶硅薄膜晶体管具有较高的载流子迁移率,因此利用多晶硅薄膜晶体管制作的显示装置会有较高的分辨率(PPI)以及较快的屏幕刷新率,从而使得多晶硅技术逐渐取代非晶硅技术成为薄膜晶体管研发的主流。
目前,一般通过调整准分子激光退火(Excimer Laser Annealing,ELA)工艺来提升结晶质量,以提高薄膜晶体管的载流子迁移率。然而,消费市场对显示装置的分辨率越来越高的要求,必然促生具有更高载流子迁移率的薄膜晶体管。
发明内容
有鉴于此,本发明实施例提供一种薄膜晶体管的制作方法及薄膜晶体管,用以提供一种载流子迁移率较高的薄膜晶体管。
因此,本发明实施例提供的一种薄膜晶体管的制作方法,包括:提供一衬底基板;在所述衬底基板上形成多晶硅构成的有源层;在所述有源层上形成具有预设本征张应力的第一栅绝缘层。
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述在所述有源层上形成具有预设本征张应力的第一栅绝缘层,具体包括:
采用等离子体增强化学气相沉积法,在温度为390℃~450℃、功率为1200W~1800W、硅烷/一氧化二氮的流量比为0.5~2的条件下,在所述有源层上形成本征张应力为500MPa~800MPa的所述第一栅绝缘层。
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述在所述有源层上形成具有预设本征张应力的第一栅绝缘层,具体包括:
采用物理气相沉积法,在温度为200℃~400℃、真空度为5*10-4Pa~5*10-3Pa的条件下,在所述有源层上形成本征张应力为500MPa~800MPa的所述第一栅绝缘层。
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述第一栅绝缘层的厚度为
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述第一栅绝缘层的材料为二氧化铪、二氧化硅、氮化硅之一或组合。
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,在所述有源层上形成具有预设本征张应力的第一栅绝缘层之后,还包括:在所述第一栅绝缘层上形成具有预设本征压应力的第二栅绝缘层。
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述在所述第一栅绝缘层上形成具有预设本征压应力的第二栅绝缘层,具体包括:
采用等离子体增强化学气相沉积法,在温度为250℃~350℃、功率为1200W~1800W、硅烷/氨气的流量比为0.1~3的条件下,在所述第一栅绝缘层上形成本征压应力为-100MPa~-400MPa的所述第二栅绝缘层。
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述第二栅绝缘层的厚度为
在一种可能的实现方式中,在本发明实施例提供的上述制作方法中,所述第二栅绝缘层的材料为二氧化铪、二氧化硅、氮化硅之一或组合。
相应地,本发明实施例还提供了一种采用上述制作方法制得的薄膜晶体管。
本发明有益效果如下:
本发明实施例提供的一种薄膜晶体管的制作方法及薄膜晶体管,其中该制作方法包括:提供一衬底基板;在衬底基板上形成多晶硅构成的有源层;在有源层上形成具有预设本征张应力的第一栅绝缘层。由于在本发明的技术方案中,受第一栅绝缘层预设本征张应力的作用,有源层中多晶硅的晶格尺寸会发生变化,从而可有效提高薄膜晶体管的载流子迁移率。由此可见,本发明的技术方案在不增加额外工艺或结构的前提下,通过设置第一栅绝缘层的本征张应力进一步提高了薄膜晶体管的载流子迁移率。
附图说明
图1a和图1b分别为本发明实施例提供的薄膜晶体管的制作方法的流程图;
图2为本发明实施例提供的薄膜晶体管的结构示意图。
具体实施方式
下面结合附图,对本发明实施例提供的薄膜晶体管的制作方法及薄膜晶体管的具体实施方式进行详细的说明。需要说明的是本说明书所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例;并且在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合;此外,基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
附图中各膜层的形状和大小不反映其在薄膜晶体管中的真实比例,目的只是示意说明本发明内容。
本发明实施例提供的一种薄膜晶体管的制作方法,如图1a和图1b所示,具体可以包括以下步骤:
S101、提供一衬底基板;
S102、在衬底基板上形成多晶硅构成的有源层;
S103、在有源层上形成具有预设本征张应力的第一栅绝缘层。
由于在本发明实施例提供的上述制作方法中,受第一栅绝缘层预设本征张应力的作用,有源层中多晶硅的晶格尺寸会发生变化,从而可有效提高薄膜晶体管的载流子迁移率。由此可见,本发明的技术方案在不增加额外工艺或结构的前提下,通过设置第一栅绝缘层的本征张应力进一步提高了薄膜晶体管的载流子迁移率。
需要说明的是,在本发明实施例提供的上述制作方法中,步骤S101提供一衬底基板中的衬底基板可以是刚性衬底基板,例如玻璃基板;还可以是柔性衬底基板,例如由聚乙烯醚邻苯二甲酸酯、聚萘二甲酸乙二醇酯、聚碳酸酯、多芳基化合物、聚醚酰亚胺、聚醚砜或聚酰亚胺等具有优良的耐热性和耐久性的塑料基板,在此不做限定。
此外,在本发明实施例提供的上述制作方法中,可以采用固相晶化(Solid PhaseCrystallization,SPC)、金属诱导横向晶化(Metal-Induced Lateral Crystallization,MILC)或准分子激光退火(Excimer Laser Annealing,ELA)等技术形成多晶硅薄膜,再通过对多晶硅薄膜进行构图得到有源层的图案。
具体地,以采用准分子激光退火工艺制备多晶硅以便后续形成有源层为例,步骤S102在衬底基板上形成多晶硅构成的有源层,具体可以通过以下步骤进行实现:在衬底基板上依次沉积缓冲层和非晶硅薄膜层;对非晶硅薄膜层进行热退火和准分子激光退火,得到多晶硅薄膜层;在得到的多晶硅薄膜层上涂覆光刻胶,并进行曝光及显影,之后进行刻蚀并去除光刻胶,形成有源层。且在对非晶硅薄膜层进行准分子激光退火的过程中,可以通过调节准分子激光退火工艺参数来提升结晶质量以获得较大的载流子迁移率。进一步地,由于有源层采用多晶硅材料,较佳地,还可以在衬底基板和缓冲层之间形成遮光层,以通过遮光层遮挡外界光线对多晶硅材料的影响,防止有源层产生光生载流子,进而避免影响薄膜晶体管的开关特性。
在具体实施时,在本发明实施例提供的上述制作方法中,步骤S103在有源层上形成具有预设本征张应力的第一栅绝缘层,具体可以通过以下但不限于以下两种可能的实施方式进行实现。
具体地,其中一种可能的实施方式为:采用等离子体增强化学气相沉积法,在温度为390℃~450℃、功率为1200W~1800W、硅烷/一氧化二氮(SiH4/N2O)的流量比为0.5~2的条件下,在有源层上形成本征张应力为500MPa~800MPa的第一栅绝缘层。
另一种可能的实施方式为:采用物理气相沉积法,在温度为200℃~400℃、真空度为5*10-4Pa~5*10-3Pa的条件下,在有源层上形成本征张应力为500MPa~800MPa的第一栅绝缘层。
在具体实施时,在本发明实施例提供的上述制作方法中,第一栅绝缘层的厚度可以为且第一栅绝缘层的材料可以为二氧化铪、二氧化硅、氮化硅之一或组合;当然,在实际制作时,第一栅绝缘层的材料还可以为本领域技术人员公知的其他用于栅绝缘层的材料,在此不做限定。
在具体实施时,为缓和具有较高本征张应力的第一栅绝缘层对后续膜层的影响,较佳地,在本发明实施例提供的上述制作方法中,在执行步骤S103在有源层上形成具有预设本征张应力的第一栅绝缘层之后,如图1b所示,还可以执行以下步骤:
S104、在第一栅绝缘层上形成具有预设本征压应力的第二栅绝缘层。
这样以来,可以使得具有较高本征张应力的第一栅绝缘层与具有一定本征张应力的第二栅绝缘层共同构成的栅绝缘层的整体应力较小,从而改善了具有较高本征张应力的第一栅绝缘层对后续膜层的影响。其中,后续膜层一般包括依次形成于第二栅绝缘层上的栅金属层、层间介质层和源漏金属层;且在层间介质层及第二栅绝缘层、第一栅绝缘层之内具有贯通至有源层的过孔,以通过过孔实现有源层与源漏金属层中的源/漏极之间的连接。
需要说明的是,为简化制作工艺,节省制作成本,提高生产效率,在本发明实施例提供的上述制作方法中,可以使用一次构图工艺同时制备出栅极和栅线的图案。当然,也可以采用二次构图工艺,其中一次构图工艺用于制备出栅极的图案,另一次构图工艺用于制备出栅线的图案,在此不做限定。并且,栅极和栅线的材料可以是钼、铝、钨、钛、铜其中之一或合金组合,在此不做限定。
此外,为简化制作工艺,节省制作成本,提高生产效率,在本发明实施例提供的上述制作方法中,还可以使用一次构图工艺同时制备出源/漏极和数据线的图案。当然,也可以采用二次构图工艺,分别制备出源/漏极和数据线的图案,在此不做限定。且源/漏极和数据线的材料可以是钼、铝、钨、钛、铜其中之一或合金组合,在此不做限定。
在具体实施时,在本发明实施例提供的上述制作方法中,步骤S104在第一栅绝缘层上形成具有预设本征压应力的第二栅绝缘层,具体可以通过以下但不限于以下的方式进行实现:
采用等离子体增强化学气相沉积法,在温度为250℃~350℃、功率为1200W~1800W、硅烷/氨气(SiH4/NH3)的流量比为0.1~3的条件下,在第一栅绝缘层上形成本征压应力为-100MPa~-400MPa的第二栅绝缘层。
在具体实施时,在本发明实施例提供的上述制作方法中,第二栅绝缘层的厚度可以为且第二栅绝缘层的材料可以为二氧化铪、二氧化硅、氮化硅之一或组合;当然,在实际制作时,第二栅绝缘层的材料还可以为本领域技术人员公知的其他用于栅绝缘层的材料,在此不做限定。
需要说明的是,在本发明实施例提供的上述制作方法中,形成各膜层结构涉及到的构图工艺,不仅可以包括沉积、光刻胶涂覆、掩模板掩模、曝光、显影、刻蚀、光刻胶剥离等部分或全部的工艺过程,还可以包括其他工艺过程,例如在显影之后和刻蚀之前还可以包括后烘工艺,具体以实际制作过程中形成所需构图的图形为准,在此不做限定。
其中,沉积工艺可以为化学气相沉积法、等离子体增强化学气相沉积法或物理气相沉积法,在此不做限定;掩膜工艺中所用的掩膜板可以为半色调掩膜板(Half ToneMask)、单缝衍射掩模板(Single Slit Mask)或灰色调掩模板(Gray Tone Mask),在此不做限定;刻蚀可以为干法刻蚀或者湿法刻蚀,在此不做限定。
基于同一发明构思,本发明实施例还提供了一种采用上述制作方法制得的薄膜晶体管,如图2所示,包括衬底基板201、依次设置于衬底基板201上由多晶硅构成的有源层202和具有较高本征张应力的第一栅绝缘层203。较佳地,为缓和具有较高本征张应力的第一栅绝缘层203对后续膜层的影响,还可以包括位于第一栅绝缘层203背离有源层202一侧且具有预设本征压应力的第二栅绝缘层204。
值得注意的是,本发明实施例提供的上述薄膜晶体管可以为P型晶体管,也可以为N型晶体管,在此不做限定。并且,在上述薄膜晶体管为P型晶体管时,具有较高本征张应力的第一栅绝缘层203可有效提高薄膜晶体管的空穴迁移率;在上述薄膜晶体管为N型晶体管时,具有较高本征张应力的第一栅绝缘层203可有效提高薄膜晶体管的电子迁移率。
此外,对于本发明实施例提供的上述薄膜晶体管中其它必不可少的组成部分例如栅金属层、层间介质层和源漏金属层等均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本发明的限制。进一步地,由于该薄膜晶体管解决问题的原理与上述制作方法方法解决问题的原理相似,因此,本发明实施例提供的该薄膜晶体管的实施可以参见本发明实施例提供的上述制作方法的实施,重复之处不再赘述。
为了更好地说明本发明的技术方案,下面以两个具体的实施例对本发明提供的上述薄膜晶体管的制作方法及相应的薄膜晶体管进行详细地说明。
实施例一
提供一玻璃材质的衬底基板;
在衬底基板上依次形成遮光层、缓冲层和多晶硅构成的有源层;
采用等离子体增强化学气相沉积法,在温度为390℃~450℃、功率为1200W~1800W、硅烷/一氧化二氮(SiH4/N2O)的流量比为0.5~2的条件下,在有源层上沉积本征张应力为500MPa~800MPa、厚度为材料为二氧化硅(SiO2)的第一栅绝缘层;
采用等离子体增强化学气相沉积法,在温度为250℃~350℃、功率为1200W~1800W、硅烷/氨气(SiH4/NH3)的流量比为0.1~3的条件下,在SiO2层上沉积本征压应力为-100MPa~-400MPa、厚度为材料为氮化硅(SiNx)的第二栅绝缘层;
在SiNx层上依次形成栅金属层、层间介质层和源漏金属层。
至此,得到了具有较高载流子迁移率的薄膜晶体管。
实施例二
提供一玻璃材质的衬底基板;
在衬底基板上依次形成遮光层、缓冲层和多晶硅构成的有源层;
采用物理气相沉积法,在温度为200℃~400℃、真空度为5*10-4Pa~5*10-3Pa的条件下,在有源层上沉积本征张应力为500MPa~800MPa、厚度为材料为二氧化铪(HfO2)的第一栅绝缘层;
采用等离子体增强化学气相沉积法,在温度为250℃~350℃、功率为1200W~1800W、硅烷/氨气(SiH4/NH3)的流量比为0.1~3的条件下,在HfO2层上沉积本征压应力为-100MPa~-400MPa、厚度为材料为氮化硅(SiNx)的第二栅绝缘层;
在SiNx层上依次形成栅金属层、层间介质层和源漏金属层。
至此,得到了具有较高载流子迁移率的薄膜晶体管。
在本发明提供的上述薄膜晶体管的制作方法及薄膜晶体管中,该制作方法包括:提供一衬底基板;在衬底基板上形成多晶硅构成的有源层;在有源层上形成具有预设本征张应力的第一栅绝缘层。由于在本发明的技术方案中,受第一栅绝缘层预设本征张应力的作用,有源层中多晶硅的晶格尺寸会发生变化,从而可有效提高薄膜晶体管的载流子迁移率。由此可见,本发明的技术方案在不增加额外工艺或结构的前提下,通过设置第一栅绝缘层的本征张应力进一步提高了薄膜晶体管的载流子迁移率。
需要说明的是,在本文中,诸如第一和第二之类的关系术语仅仅用来将一个实体或操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (10)
1.一种薄膜晶体管的制作方法,包括:提供一衬底基板;在所述衬底基板上形成多晶硅构成的有源层;其特征在于,还包括:
在所述有源层上形成具有预设本征张应力的第一栅绝缘层。
2.如权利要求1所述的制作方法,其特征在于,所述在所述有源层上形成具有预设本征张应力的第一栅绝缘层,具体包括:
采用等离子体增强化学气相沉积法,在温度为390℃~450℃、功率为1200W~1800W、硅烷/一氧化二氮的流量比为0.5~2的条件下,在所述有源层上形成本征张应力为500MPa~800MPa的所述第一栅绝缘层。
3.如权利要求1所述的制作方法,其特征在于,所述在所述有源层上形成具有预设本征张应力的第一栅绝缘层,具体包括:
采用物理气相沉积法,在温度为200℃~400℃、真空度为5*10-4Pa~5*10-3Pa的条件下,在所述有源层上形成本征张应力为500MPa~800MPa的所述第一栅绝缘层。
4.如权利要求1所述的制作方法,其特征在于,所述第一栅绝缘层的厚度为
5.如权利要求1所述的制作方法,其特征在于,所述第一栅绝缘层的材料为二氧化铪、二氧化硅、氮化硅之一或组合。
6.如权利要求1-5任一项所述的制作方法,其特征在于,在所述有源层上形成具有预设本征张应力的第一栅绝缘层之后,还包括:在所述第一栅绝缘层上形成具有预设本征压应力的第二栅绝缘层。
7.如权利要求6所述的制作方法,其特征在于,所述在所述第一栅绝缘层上形成具有预设本征压应力的第二栅绝缘层,具体包括:
采用等离子体增强化学气相沉积法,在温度为250℃~350℃、功率为1200W~1800W、硅烷/氨气的流量比为0.1~3的条件下,在所述第一栅绝缘层上形成本征压应力为-100MPa~-400MPa的所述第二栅绝缘层。
8.如权利要求6所述的制作方法,其特征在于,所述第二栅绝缘层的厚度为
9.如权利要求6所述的制作方法,其特征在于,所述第二栅绝缘层的材料为二氧化铪、二氧化硅、氮化硅之一或组合。
10.一种薄膜晶体管,其特征在于,所述薄膜晶体管采用如权利要求1-9任一项所述的制作方法制得。
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