CN107867839A - 一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法 - Google Patents

一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法 Download PDF

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CN107867839A
CN107867839A CN201610842009.6A CN201610842009A CN107867839A CN 107867839 A CN107867839 A CN 107867839A CN 201610842009 A CN201610842009 A CN 201610842009A CN 107867839 A CN107867839 A CN 107867839A
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施海月
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Abstract

本申请公开了一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,包括:(1)、制备ZnO/SiO2基料;(2)、加入4~5wt%的MgO2;(3)、球磨;(4)、烘干、过筛;(5)造粒:在陶瓷粉料中加入8wt%的聚乙烯醇,充分研磨后再过筛;(6)、干压成型:将造粒好的陶瓷粉料在180MPa的压力下压制成圆柱形陶瓷生坯或圆片;(7)、烧结:在500℃排胶1小时,然后按照3~5℃/min速率升至1200~1350℃保温2小时;(8)、冷却至室温。本发明通过Mg2+的添加能够有效改善ZnO/SiO2微波介质陶瓷的烧结特性,展宽烧结温区,降低烧结温度。所获得陶瓷材料性能参数如下:介电常数=6.2,品质因数=47900GHz,温度系数=‑51.2ppm/℃。

Description

一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法
技术领域
本申请属于通讯技术领域,特别是涉及一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法。
背景技术
近年来,为了适应电子元器件高频化发展需求,低介高频的陶瓷材料越来越成为研究的热点。ZnO/SiO2低介电常数陶瓷系统是一种新型的微波介质陶瓷体系,该陶瓷体系具有较小的介电常数和优异的微波性能,但是烧结温度较高。
发明内容
本发明的目的在于提供一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,以克服现有技术中的不足。
为实现上述目的,本发明提供如下技术方案:
本申请实施例公开一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,包括:
(1)、制备ZnO/SiO2基料;
(2)、加入4~5wt%的MgO2
(3)、球磨;
(4)、烘干、过筛;
(5)造粒:在陶瓷粉料中加入8wt%的聚乙烯醇,充分研磨后再过筛;
(6)、干压成型:将造粒好的陶瓷粉料在180MPa的压力下压制成圆柱形陶瓷生坯或圆片;
(7)、烧结:在500℃排胶1小时,然后按照3~5℃/min速率升至1200~1350℃保温2小时;
(8)、冷却至室温。
优选的,在上述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法中,制备ZnO/SiO2基料的制备方法包括:
(1)、ZnO和SiO2按照摩尔比4:3计量;
(2)、球磨:将按配方称好的粉料放入尼龙球磨罐中,以无水乙醇作为球磨介质,氧化锆为磨球,利用变频式行星球磨机球磨,球磨转速365rpm,按照原料:磨球:无水乙醇=1:3:2比例球磨10~15小时;
(3)、烘干、过筛:将球磨后浆料在干燥箱中进行干燥,干燥温度80℃,干燥时间20min,干燥完成后采用100目的筛子过筛;
(4)、预烧:在氧化铝坩埚中于1100℃预烧4小时。
优选的,在上述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法中,所述步骤(3)中,球磨方法包括:将料放入尼龙球磨罐中,以无水乙醇作为球磨介质,氧化锆为磨球,利用变频式行星球磨机球磨,球磨转速365rpm,按照原料:磨球:无水乙醇=1:3:2比例球磨10~15小时。
优选的,在上述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法中,所述步骤(4)中,烘干、过筛方法包括:将球磨后浆料在干燥箱中进行干燥,干燥温度100℃,干燥时间20min,干燥完成后采用40目的筛子过筛,获得陶瓷粉料。
优选的,在上述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法中,所述步骤(8)中,冷却至室温方法包括:首先以1℃/min的速率降到1000℃,再以100℃/小时的速率降到800℃,然后自然冷却至常温。
与现有技术相比,本发明的优点在于:
本发明通过Mg2+的添加能够有效改善ZnO/SiO2微波介质陶瓷的烧结特性,展宽烧结温区,降低烧结温度。所获得陶瓷材料性能参数如下:介电常数=6.2,品质因数=47900GHz,温度系数=-51.2ppm/℃。
具体实施方式
本发明通过下列实施例作进一步说明:根据下述实施例,可以更好地理解本发明。然而,本领域的技术人员容易理解,实施例所描述的具体的物料比、工艺条件及其结果仅用于说明本发明,而不应当也不会限制权利要求书中所详细描述的本发明。
本实施例中,Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,包括:
(1)、制备ZnO/SiO2基料;
(2)、加入5wt%的MgO2
(3)、球磨:将料放入尼龙球磨罐中,以无水乙醇作为球磨介质,氧化锆为磨球,利用变频式行星球磨机球磨,球磨转速365rpm,按照原料:磨球:无水乙醇=1:3:2比例球磨10小时;
(4)、烘干、过筛:将球磨后浆料在干燥箱中进行干燥,干燥温度100℃,干燥时间20min,干燥完成后采用40目的筛子过筛,获得陶瓷粉料;
(5)造粒:在陶瓷粉料中加入8wt%的聚乙烯醇,充分研磨后再过筛;
(6)、干压成型:将造粒好的陶瓷粉料在180MPa的压力下压制成圆柱形陶瓷生坯或圆片;
(7)、烧结:在500℃排胶1小时,然后按照5℃/min速率升至1250℃保温2小时;
(8)、冷却至室温:首先以1℃/min的速率降到1000℃,再以100℃/小时的速率降到800℃,然后自然冷却至常温。
制备ZnO/SiO2基料的制备方法包括:
(1)、ZnO和SiO2按照摩尔比4:3计量;
(2)、球磨:将按配方称好的粉料放入尼龙球磨罐中,以无水乙醇作为球磨介质,氧化锆为磨球,利用变频式行星球磨机球磨,球磨转速365rpm,按照原料:磨球:无水乙醇=1:3:2比例球磨10小时;
(3)、烘干、过筛:将球磨后浆料在干燥箱中进行干燥,干燥温度80℃,干燥时间20min,干燥完成后采用100目的筛子过筛;
(4)、预烧:在氧化铝坩埚中于1100℃预烧4小时。
Mg2+的添加能够有效改善ZnO/SiO2微波介质陶瓷的烧结特性,展宽烧结温区,降低烧结温度。
将烧结好的陶瓷粉体进行测试,测试项目包括介电常数、品质因数和温度系数,所用仪器型号为HP8703A,测试腔体为Φ30×t28mm的镀银铝腔,其性能参数如下:介电常数=6.2,品质因数=47900GHz,温度系数=-51.2ppm/℃。
最后,还需要说明的是,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。

Claims (5)

1.一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,其特征在于,包括::
(1)、制备ZnO/SiO2基料;
(2)、加入4~5wt%的MgO2
(3)、球磨;
(4)、烘干、过筛;
(5)造粒:在陶瓷粉料中加入8wt%的聚乙烯醇,充分研磨后再过筛;
(6)、干压成型:将造粒好的陶瓷粉料在180MPa的压力下压制成圆柱形陶瓷生坯或圆片;
(7)、烧结:在500℃排胶1小时,然后按照3~5℃/min速率升至1200~1350℃保温2小时;
(8)、冷却至室温。
2.根据权利要求1所述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,其特征在于:制备ZnO/SiO2基料的制备方法包括:
(1)、ZnO和SiO2按照摩尔比4:3计量;
(2)、球磨:将按配方称好的粉料放入尼龙球磨罐中,以无水乙醇作为球磨介质,氧化锆为磨球,利用变频式行星球磨机球磨,球磨转速365rpm,按照原料:磨球:无水乙醇=1:3:2比例球磨10~15小时;
(3)、烘干、过筛:将球磨后浆料在干燥箱中进行干燥,干燥温度80℃,干燥时间20min,干燥完成后采用100目的筛子过筛;
(4)、预烧:在氧化铝坩埚中于1100℃预烧4小时。
3.根据权利要求1所述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,其特征在于:所述步骤(3)中,球磨方法包括:将料放入尼龙球磨罐中,以无水乙醇作为球磨介质,氧化锆为磨球,利用变频式行星球磨机球磨,球磨转速365rpm,按照原料:磨球:无水乙醇=1:3:2比例球磨10~15小时。
4.根据权利要求1所述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,其特征在于:所述步骤(4)中,烘干、过筛方法包括:将球磨后浆料在干燥箱中进行干燥,干燥温度100℃,干燥时间20min,干燥完成后采用40目的筛子过筛,获得陶瓷粉料。
5.根据权利要求1所述的Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法,其特征在于:所述步骤(8)中,冷却至室温方法包括:首先以1℃/min的速率降到1000℃,再以100℃/小时的速率降到800℃,然后自然冷却至常温。
CN201610842009.6A 2016-09-22 2016-09-22 一种Mg掺杂ZnO/SiO2微波介质陶瓷的制备方法 Withdrawn CN107867839A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111377731A (zh) * 2018-12-31 2020-07-07 深圳市大富科技股份有限公司 微波介质陶瓷材料和介质陶瓷块的制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111377731A (zh) * 2018-12-31 2020-07-07 深圳市大富科技股份有限公司 微波介质陶瓷材料和介质陶瓷块的制备方法

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