CN107863429A - 一种GaN外延片及制造方法 - Google Patents
一种GaN外延片及制造方法 Download PDFInfo
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- CN107863429A CN107863429A CN201711365930.7A CN201711365930A CN107863429A CN 107863429 A CN107863429 A CN 107863429A CN 201711365930 A CN201711365930 A CN 201711365930A CN 107863429 A CN107863429 A CN 107863429A
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- gallium nitride
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- 238000000407 epitaxy Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 20
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 11
- 150000004767 nitrides Chemical group 0.000 claims abstract description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 230000012010 growth Effects 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000001934 delay Effects 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000004614 tumor growth Effects 0.000 abstract description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000005915 ammonolysis reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Abstract
本发明提供一种GaN外延片及制造方法，其中所述的衬底的上部为氮化镓缓冲层，氮化镓缓冲层的上部为氮化镓外延层，最上方为氮化镓铝层，所述的二维电子气（2DEG）层位于氮化镓铝层和氮化镓外延层之间；优点为：提供具有多个反应腔室的设备，将成核层固定于一个反应腔室内生长，将含有Ga元素的缓冲层固定于另一个腔体内生长，可以有效地防止反应腔室内残留物挥发回熔对其他薄膜层质量造成影响，从而提高GaN外延层的晶体质量。
Description
技术领域
本发明涉及GaN外延片领域，尤其涉及一种GaN外延片及制造方法。
背景技术
GaN基LED自从20世纪90年代初商业化以来，经过二十几年的发展，已经开始全面进入通用照明领域，随着LED应用范围的进一步扩大，各领域对LED的发光效率、使用寿命和性价比等指标提出了越来越高的要求。GaN基LED的发光效率、使用寿命和性价比等指标无一不与其所采用的衬底息息相关。蓝宝石衬底和碳化硅衬底是目前GaN基LED器件的两大主流衬底。蓝宝石衬底生产技术相对成熟、化学稳定性好、机械强度高，但其导热性差，不利于LED使用寿命的提高；且不易于向大尺寸方向发展。碳化硅衬底是电和热的良导体，且具有化学稳定性好的优势，在半导体照明技术领域具有重要地位，但其价格高昂，性价比较差。
发明内容
本发明的目的在于为解决现有技术的不足，而提供一种GaN外延片及制造方法。
本发明新的技术方案是：一种GaN外延片及制造方法，主要包括氮化镓铝层、氮化镓外延层、氮化镓缓冲层、衬底及二维电子气（2DEG）层，所述的衬底的上部为氮化镓缓冲层，氮化镓缓冲层的上部为氮化镓外延层，最上方为氮化镓铝层，所述的二维电子气（2DEG）层位于氮化镓铝层和氮化镓外延层之间。
所述的在衬底上低温生长氮化镓作为缓冲层，在缓冲层上进行HEMT结构生长；首先生成数微米厚度的高温氮化镓外延层，再在氮化镓外延层上生长AlXGa1-XN薄层；AlGaN和GaN界面GaN一侧会形成二维电子气（2DEG），2DEG是HEMT器件的导电层。
所述的衬底为蓝宝石、碳化硅或氮化镓等基底材料。
本发明的有益效果是：提供具有多个反应腔室的设备，将成核层固定于一个反应腔室内生长，将含有Ga元素的缓冲层固定于另一个腔体内生长，可以有效地防止反应腔室内残留物挥发回熔对其他薄膜层质量造成影响，从而提高GaN外 延层的晶体质量。
附图说明
图1为本发明的结构示意图。
其中：1为氮化镓铝，2为氮化镓外延层，3为氮化镓缓冲层，4为衬底，5为二维电子气（2DEG）层。
具体实施方式
下面结合附图对本发明做进一步说明。
一种GaN外延片及制造方法，主要包括氮化镓铝层1、氮化镓外延层2、氮化镓缓冲层3、衬底4及二维电子气（2DEG）层5，所述的衬底4的上部为氮化镓缓冲层3，氮化镓缓冲层3的上部为氮化镓外延层2，最上方为氮化镓铝层1，所述的二维电子气（2DEG）层5位于氮化镓铝层1和氮化镓外延层2之间。
所述的在衬底4上低温生长氮化镓作为缓冲层，在缓冲层上进行HEMT结构生长；首先生成数微米厚度的高温氮化镓外延层2，再在氮化镓外延层2上生长AlXGa1-XN薄层；AlGaN和GaN界面GaN一侧会形成二维电子气（2DEG），2DEG是HEMT器件的导电层。
所述的衬底为蓝宝石、碳化硅或氮化镓等基底材料。
Claims (3)
1.一种GaN外延片及制造方法，主要包括氮化镓铝层（1）、氮化镓外延层（2）、氮化镓缓冲层（3）、衬底（4）及二维电子气（2DEG）层（5），其特征在于：所述的衬底（4）的上部为氮化镓缓冲层（3），氮化镓缓冲层（3）的上部为氮化镓外延层（2），最上方为氮化镓铝层（1），所述的二维电子气（2DEG）层（5）位于氮化镓铝层（1）和氮化镓外延层（2）之间。
2.根据权利要求1所述的一种GaN外延片及制造方法，其特征在于：所述的在衬底（4）上低温生长氮化镓作为缓冲层，在缓冲层上进行HEMT结构生长；首先生成数微米厚度的高温氮化镓外延层（2），再在氮化镓外延层（2）上生长AlXGa1-XN薄层；AlGaN和GaN界面GaN一侧会形成二维电子气（2DEG），2DEG是HEMT器件的导电层。
3.根据权利要求2所述的一种GaN外延片及制造方法，其特征在于：所述的衬底为蓝宝石、碳化硅或氮化镓等基底材料。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522471A (zh) * | 2011-12-29 | 2012-06-27 | 湘能华磊光电股份有限公司 | Led外延片 |
| US20130337639A1 (en) * | 2012-06-13 | 2013-12-19 | Ostendo Technologies, Inc. | Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy |
| CN105679823A (zh) * | 2016-02-17 | 2016-06-15 | 香港商莫斯飞特半导体有限公司 | 一种纵向型氮化镓基异质结半导体器件及其制造方法 |
| CN207517720U (zh) * | 2017-12-18 | 2018-06-19 | 山东聚芯光电科技有限公司 | 一种GaN外延片 |
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2017
- 2017-12-18 CN CN201711365930.7A patent/CN107863429A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522471A (zh) * | 2011-12-29 | 2012-06-27 | 湘能华磊光电股份有限公司 | Led外延片 |
| US20130337639A1 (en) * | 2012-06-13 | 2013-12-19 | Ostendo Technologies, Inc. | Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy |
| CN105679823A (zh) * | 2016-02-17 | 2016-06-15 | 香港商莫斯飞特半导体有限公司 | 一种纵向型氮化镓基异质结半导体器件及其制造方法 |
| CN207517720U (zh) * | 2017-12-18 | 2018-06-19 | 山东聚芯光电科技有限公司 | 一种GaN外延片 |
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Application publication date: 20180330 |