CN107848893A - 与镍电极一起使用的cog介电组合物 - Google Patents
与镍电极一起使用的cog介电组合物 Download PDFInfo
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- CN107848893A CN107848893A CN201680042930.0A CN201680042930A CN107848893A CN 107848893 A CN107848893 A CN 107848893A CN 201680042930 A CN201680042930 A CN 201680042930A CN 107848893 A CN107848893 A CN 107848893A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 38
- 239000012298 atmosphere Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 25
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021523 barium zirconate Inorganic materials 0.000 claims abstract description 12
- 239000006071 cream Substances 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 58
- 239000003989 dielectric material Substances 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000007787 solid Substances 0.000 claims description 20
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 12
- 230000000994 depressogenic effect Effects 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910002971 CaTiO3 Inorganic materials 0.000 claims description 10
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 238000005056 compaction Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- 150000003624 transition metals Chemical class 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 claims 2
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 abstract description 11
- 239000010953 base metal Substances 0.000 abstract description 9
- 229910000990 Ni alloy Inorganic materials 0.000 abstract description 7
- 238000005245 sintering Methods 0.000 abstract description 6
- 229910052712 strontium Inorganic materials 0.000 abstract description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 58
- 239000007789 gas Substances 0.000 description 12
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 239000011575 calcium Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 239000010944 silver (metal) Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- -1 polypropylene Polymers 0.000 description 4
- 229910000018 strontium carbonate Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- 235000013339 cereals Nutrition 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004567 concrete Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 239000004909 Moisturizer Substances 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N beta-terpineol Chemical compound CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940043430 calcium compound Drugs 0.000 description 1
- 150000001674 calcium compounds Chemical class 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical class CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000001333 moisturizer Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
- B28B11/12—Apparatus or processes for treating or working the shaped or preshaped articles for removing parts of the articles by cutting
- B28B11/125—Cutting-off protruding ridges, also profiled cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/636—Polysaccharides or derivatives thereof
- C04B35/6365—Cellulose or derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
-
- C—CHEMISTRY; METALLURGY
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Abstract
根据本发明制备了多层陶瓷片式电容器，其满足COG要求，并且与还原性气氛烧结条件相容，使得非贵金属例如镍及其镍合金可用于内电极和外电极。该电容器表现出令人期望的介电性能(高电容量、低耗散因数、高绝缘电阻)、在高加速寿命测试时的优异性能，以及非常好的抗介电击穿性。该介电层包含锆酸钡锶基质，其掺杂有各种组合的其他金属氧化物，例如TiO2、CaO、B2O3和MgO。
Description
发明背景
1.发明领域
本发明涉及基于锆酸盐钛酸盐的介电组合物，并且更具体地涉及基于掺杂的钡-锶-锆酸盐的介电组合物，其可以用于形成具有由镍或镍合金形成的贱金属内电极的多层陶瓷片式电容器。
2.相关领域的说明
多层陶瓷片式电容器已经广泛用作小型化、高电容量和高可靠性的电子元件。随着对高性能电子器件的日益增长的需求，多层陶瓷片式电容器还面临对更小尺寸、更高电容量、更低成本和更高可靠性的市场需求。
多层陶瓷片式电容器通常是通过形成内电极形成膏和介电层形成膏的交替层来制造的。这样的层通常是通过形成薄片(sheeting)、印刷或者类似技术，随后同时烧成来形成的。
通常，内电极由导体(例如，钯、金、银或者前述金属的合金)形成。虽然钯、金和银是昂贵的，但是可以通过使用相对廉价的贱金属例如镍及其合金来部分地替代它们。“贱金属”是除了金、银、钯和铂之外的任何金属。如果在环境空气中烧成，则贱金属内电极会被氧化，因此必须在还原性气氛中共烧成介电层和内电极层。但是，在还原性气氛中烧成导致介电层被还原，这降低了电阻率。已经提出使用不可还原的介电材料的多层陶瓷片式电容器，但是，这种器件通常具有较短的绝缘阻抗(IR)寿命和低的可靠性。
电子工业协会(EIA)规定了电容温度系数(TCC)的标准，称为COG特性。COG特性要求在-55℃到+125℃的温度范围内，电容的变化不大于每摄氏度30ppm(±30ppm/℃)。COG组件不表现出电容老化。
发明内容
本发明提供一种介电组合物，其可用于制造可与含有贱金属(例如镍或者镍合金)的内电极兼容的陶瓷多层电容器。电容器可以由本发明的介电组合物形成，从而在高加速寿命测试条件下表现出稳定的介电常数和小的介电损耗以及优异的可靠性。
本发明的介电组合物包含均匀致密的晶粒微观结构，其平均直径为约0.5至约3微米。均匀致密的晶粒微观结构对于获得具有厚度小于5微米的介电层的高可靠性多层电容器是至关重要的。
在一个实施方案中，本发明的可为膏形式的介电组合物在烧成之前包含钡、锶和锆的氧化物的混合物。可以加入诸如CaO和TiO2的氧化物以调节TCC值。因此，本发明的一个实施方案是一种包含前体混合物的组合物，其在烧成时形成了包含掺杂有少量钙和钛的钡-锶-锆酸盐基质的介电材料。少量表示3重量％以下。可以加入有助于烧结的氧化物，例如MgO和B2O3。
一种包含前体混合物的组合物，其在烧成时形成了包含掺杂有少量钙和钛的钡-锶-锆酸盐基质的介电材料。
一种包含前体混合物的组合物，其在烧成时形成了介电材料，该介电材料包含：约26.5重量％至约34.0重量％的BaO；约18.0重量％至约24.5重量％的SrO；约41.0重量％至约50.0重量％的ZrO2；约0.50重量％至约1.50重量％的CaO；和约0.70重量％至约2.50重量％的TiO2。在这个实施方案中，介电材料可以进一步包含这样的前体，使得在烧成时，介电材料进一步包含约0.10重量％至约1.0重量％的B2O3；和约0.31重量％至约1.47重量％的MgO。
本发明的一个实施方案是一种形成电子元件的方法，其包括：将本文其他地方公开的任何介电膏、介电材料或者前体的任何混合物施加至基底上；和将基底在足以烧结介电膏、介电材料或者前体的任何混合物的温度下进行烧成。
本发明的一个实施方案是一种多层陶瓷片式电容器，其包含交替层叠的以下层的烧成集合体：本文其他地方公开的任何介电膏、介电材料或者前体的任何混合物的层；和内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
本发明的一个实施方案是一种形成电子元件的方法，其包括将以下层交替施加至基底上以形成层叠体：
本文其他地方公开的任何介电膏、介电材料或者前体的任何混合物，和
含金属的电极膏；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中内电极层和介电层各自具有一定的层厚度。
该方法可以进一步包括将含有导电金属的膏施加到介电层和电极层的端部，并进行烧成以形成多层电容器。导电金属优选是铜。
本发明的一个实施方案是一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约34.1重量％至约43.8重量％的BaCO3；
约25.6重量％至约34.9重量％的SrCO3；
约41.0重量％至约50.0重量％的ZrO2；
约0.70重量％至约2.50重量％的TiO2；和
约0.89重量％至约2.70重量％的CaCO3。
本发明的一个实施方案是一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约47.8重量％至约61.3重量％的BaZrO3；
约1.6重量％至约5.7重量％的SrTiO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；和
约1.6重量％至约4.8重量％的CaZrO3。
本发明的一个实施方案是一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约47.8重量％至约61.3重量％的BaZrO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；
约0.1重量％至约2.14重量％的Mg(OH)2；和
约0.1重量％至约1.78重量％的H3BO3。
本发明的一个实施方案是一种无铅无镉的介电组合物，其包含：
约47.8重量％至约61.3重量％的BaZrO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；
约0.1重量％至约2.14重量％的Mg(OH)2；和
约0.1重量％至约1.78重量％的H3BO3。
本发明的另一个实施方案是一种包括含介电层的多层基片的电子元件，所述介电层包含掺杂有钛酸钙混合物和氧化镁-氧化硼混合物的锆酸钡锶混合物。
在另一个实施方案中，本发明提供一种形成电子元件的方法，其包括将介电材料的颗粒施加到基底上，并将基底在足以烧结介电材料的温度下进行烧成，其中该介电材料在烧成前包含表1中的成分的混合物(重量百分比)。应理解，本文的每个数值(百分比、温度等)被认为是其前面有“约”。
表1：介电组合物的氧化物配方
| BaO | SrO | ZrO2 | CaO | TiO2 | B2O3 | MgO | |
| 重量％ | 26.5-34.0 | 18.0-24.5 | 41.0-50.0 | 0.50-1.50 | 0.70-2.50 | 0.10-1.0 | 0.31-1.47 |
另一路线是由碳酸钡、碳酸锶、氧化锆、二氧化钛和碳酸钙开始的。就此而言，表2的配方将产生与表1的配方所制备的大致相同的介电材料。
表2：介电组合物的替代配方
| BaCO3 | SrCO3 | ZrO2 | TiO2 | CaCO3 | B2O3 | MgO | |
| 重量％ | 34.1-43.8 | 25.6-34.9 | 41.0-50.0 | 0.70-2.50 | 0.89-2.70 | 0.10-1.0 | 0.31-1.47 |
还可以通过烧成一种或多种预反应的氧化物的混合物来制备组合物，所述预反应的氧化物为例如钛酸钡(BaTiO3)、锆酸钡(BaZrO3)、钛酸锶(SrTiO3)、锆酸锶(SrZrO3)、钛酸钙(CaTiO3)、锆酸钙(CaZrO3)。就此而言，表3的配方将产生与表1的配方所制备的大致相同的介电材料。
表3：介电组合物的替代配方
| BaTiO3 | BaZrO3 | SrTiO3 | SrZrO3 | CaZrO3 | CaTiO3 | B2O3 | MgO | |
| 重量％ | 0.0-7.3 | 47.8-61.3 | 1.6-5.7 | 39.4-53.6 | 1.6-4.8 | 1.2-3.6 | 0.10-1.0 | 0.31-1.47 |
本发明的前述和其他特征在下文中更充分地描述，并且在权利要求中特别指出，下面的说明详细阐述了本发明的某些示例性实施方案，但是，这些仅表示其中可以采用本发明的原则的几种不同的方式。
附图说明
图1是根据本发明的一个实施方案的多层陶瓷片式电容器的截面图。
具体实施方式
多层片式电容器是通过交替层叠介电层和内电极以形成粗基片来制造的。本文所关注的内电极包括含镍或者镍合金的贱金属。形成介电层的介电组合物是通过用有机载体系统对介电组分进行湿磨来生产的。将介电组合物沉积在载体膜(例如聚酯或者聚丙烯)、或者带状物(例如不锈钢)、纸或者基板(例如氧化铝或者玻璃)上，涂覆所述膜，并形成薄片，其与电极交替层叠以形成粗基片。
在形成粗基片后，通过在空气气氛中加热到小于约350℃的温度来去除有机载体。一旦去除载体，则在氧分压为约10-12至约10-8大气压的湿的氮气和氢气的还原性气氛中，在约1100℃至约1400℃、优选约1200℃至约1350℃、更优选约1225℃至约1325℃的温度下烧成粗基片。可使用各种加热路线来去除粘结剂并烧成基片。
多层陶瓷电容器的构造是本领域公知的。参见图1，示出了一种多层陶瓷片式电容器1的示例性结构。电容器1的外电极4位于电容器基片1的侧面上，并且与内电极层3电连接。电容器基片1具有多个交替层叠的介电层2。电容器基片1的形状不是至关重要的，尽管它通常是矩形。此外，尺寸也不是至关重要的，并且所述基片可以具有适于具体应用的尺寸，通常在1.0至5.6mm x 0.5至5.0mm x 0.5至1.9mm的范围内。层叠内电极层3，使得在相对的两端，它们交替露出于基片1的相对侧面上。即，一组内电极层3露出于基片1的一个侧面上，而另一组内电极层3露出于基片1的相对侧面上。将一个外电极4施加至电容器基片1的一个侧面上，其与一组内电极层3电接触，而将另一个外电极4施加至基片1的相对侧面上，其与另一组内电极层3电接触。
本发明提供一种包含前体混合物的组合物，其在烧成时形成了包含掺杂有至少钙和钛的钡-锶-锆酸盐基质的介电材料。在一些实施方案中，该混合物进一步包含这样的前体，使得在烧成时，该介电材料进一步包含选自硼和镁的一种或多种掺杂剂。由本发明的组合物形成的介电材料表现出的介电常数大于35，优选大于40，更优选大于45。
介电层是由介电材料形成的，所述介电材料是通过烧结包含钡、钙、锶、钛和锆的氧化物的混合物而形成的，如表1或者2所示。包括B2O3和MgO的烧结助剂可以是有用的。
另一路线是由钛酸钡、锆酸钡、钛酸锶、锆酸锶、锆酸钙、钛酸钙来开始的，如表3所示。对本领域技术人员来说显而易见地是上述氧化物以它们的氢氧化物或者其他形式例如碳酸盐、乙酸盐、硝酸盐和有机金属化合物例如金属甲酸盐、金属草酸盐等具有相同的效果，条件是以期望的量提供期望的金属离子。
其他化合物可以存在于介电材料中，条件是该其他化合物不对介电性能产生不利影响。这样的化合物通常作为杂质存在于原料中。
本文的介电组合物具有细晶粒，其通常具有约0.5至约3微米的平均尺寸，并且晶粒尺寸优选小于约0.7微米。
每个介电层的厚度最高达约50微米。优选地，每个介电层的厚度为约0.5微米至约50微米。更优选地，每个介电层的厚度为约2微米至约10微米。本文的组合物可以用于制备具有薄的介电层的多层陶瓷片式电容器，以确保在使用寿命期间的电容量降低最小化。在片式电容器中层叠的介电层的数目通常为约2至约800，优选约3至约400。
本发明的多层陶瓷片式电容器通常是通过常规的印刷法和形成薄片法使用膏形成粗基片，并烧成该粗基片来制备的。在烧成后，将所述基片在诸如氧化铝或者二氧化硅的介质中转笼干燥以磨掉边角。接着，将含有例如铜的导电膏施加到两端，以将露出的内电极连接在一起来制备端电极。然后，在约800℃下在氮气气氛中烧成端电极，以在两端将导体(例如铜)烧结成坚固的导电垫片，从而形成多层电容器。端电极是图1所示的外电极4。
介电膏。用于形成介电层的膏可以通过将有机载体与如本文所公开的介电材料原料(包括各种氧化物)混合来获得。还有用的是如上文所述的在烧成时转化成所述氧化物和复合氧化物的前体化合物。通过选择含有这些氧化物的化合物或这些氧化物的前体，并将它们以适当的比例混合来获得介电材料。测定这样的化合物在介电材料原料中的比例，使得在烧成后，可以获得期望的介电层组合物。介电材料原料通常是以平均粒度为约0.1至约3微米、更优选约1微米以下的粉末形式来使用的。
有机载体。有机载体是有机溶剂中的粘结剂或者水中的粘结剂。本文所用的粘结剂的选择不是至关重要的；适于与溶剂一起使用的常规粘结剂为例如乙基纤维素、聚乙烯丁醇、乙基纤维素和羟丙基纤维素及其组合。有机溶剂也不是至关重要的，并且可以根据具体施用方法(即，印刷或者形成薄片)选自常规有机溶剂：例如，丁基卡必醇、丙酮、甲苯、乙醇、二甘醇丁基醚；2,2,4-三甲基戊二醇单异丁酸酯α-松油醇；β-松油醇；γ-松油醇；十三烷醇；二甘醇乙醚二甘醇丁基醚(Butyl)和丙二醇；及其混合物。以商标名销售的产品购自Eastman Chemical Company，Kingsport，TN；以和商标名销售的那些产品购自Dow Chemical Co.，Midland，MI。
对各个膏(介电膏或者电极膏)的有机载体的含量没有特别的限制。通常所述膏包含约1至5重量％的粘结剂和约10至50重量％的有机溶剂，余量为金属组分(用于电极)或者介电组分(用于介电层)。视需要，各个膏可以包含最多约10重量％的其他添加剂，例如分散剂、增塑剂、介电化合物和绝缘化合物。
内电极。用于形成内电极层的膏是通过将导电材料与有机载体混合而获得的。本文所用的导电材料包括导体例如本文提及的导电金属和合金，以及在烧成时转化为所述导体的各种化合物，例如氧化物、有机金属化合物和树脂酸盐。
参见图1，用于形成内电极层3的导体不是至关重要的，尽管优选使用贱金属，因为介电层2的介电材料具有抗还原性。典型的贱金属包括镍及其合金。优选的镍合金包含至少一种选自Mn、Cr、Co、Cu和Al的其他金属。含有至少约95重量％的镍的合金是优选的。应指出，镍和镍合金可以包含最多约0.1重量％的磷和其他痕量组分(即，杂质)。可以控制内电极层的厚度以适于具体应用，但是所述层的厚度通常为至多约5微米。优选地，内电极层的厚度为约0.5至约5微米，更优选约1至约5微米。
外电极。形成外电极4的导体不是至关重要的，尽管优选廉价的金属，例如铜、镍，以及任一种金属或两种金属的合金，其任选地包含Mn、Cr、Co或者Al。可以控制外电极层的厚度来适于具体应用，但是所述层通常为至多约10至约50微米厚，优选约20至约40微米厚。用于形成外电极的膏是通过与用于形成内电极的相同方法来制备的。
然后可以由介电层形成膏和内电极层形成膏来制备粗基片。在印刷法的情况中，粗基片是如下制备的：将所述膏以层叠的形式交替印刷到聚酯膜(例如，聚对苯二甲酸乙二醇酯(PET))基底上；将层叠体切割成预定形状；并将它与基底分离。还有用的是形成薄片法，其中粗基片是如下制备的：由介电层形成膏来形成粗基片；将内电极层形成膏印刷到各个粗基片上；并层叠所印刷的粗基片。在从粗基片上去除有机载体后，将它烧成。可在常规条件下去除有机载体：即，在空气气氛中以0.01℃-20℃/h，更优选约0.03-0.1℃/h的速率加热，并且保持温度为约150℃至约350℃，优选约200℃至约300℃，更优选约250℃，保持时间为约30-700分钟，优选约200-300分钟。
烧成。然后在根据内电极层形成膏中的导体类型来确定的气氛中对粗基片进行烧成。在内电极层是由贱金属导体(例如镍和镍合金)形成的情况下，烧成气氛中的氧分压可以为约10-12至约10-8大气压。应避免在低于约10-12大气压的分压下烧结，这是因为在这样的低压下，导体会被不正常地烧结，并且会与介电层断开。在氧分压高于约10-8大气压时，内电极层会被氧化。约10-11-约10-9大气压的氧分压是最优选的。
对于烧成，温度从室温升高到约1200℃-约1300℃、更优选约1225℃的峰值温度。将该温度保持约2小时来增强致密化。较低的保持温度提供不足的致密化，而较高的保持温度会导致非常大的颗粒。优选在还原性气氛中进行烧成。示例性的烧成气氛包括湿N2，或者N2和H2气体的增湿混合物。烧结升温速率为约50℃至约500℃/h，优选约200℃至300℃/h；保持温度为约1225℃。保持时间为约0.5至约8小时，优选约1至3小时，更优选2小时，且冷却速率为约50℃至500℃/h，优选约200℃至300℃/h。
可以连续或者单独地进行有机载体去除和烧成。如果是连续地，则所述方法包括：有机载体去除；在不冷却的情况下改变气氛；加热至烧成温度；在烧成温度下保持规定的时间以及随后冷却。如果是单独地，则在有机载体去除和冷却后，将基片的温度升高到烧结温度，然后将气氛改变成还原性气氛。
所得到的基片可以例如通过转鼓抛光和/或喷砂来抛光两端面，之后印刷或转印外电极形成膏并对其进行烧成以形成外电极(端电极)。外电极形成膏的烧成可以在干燥的氮气气氛(约10-6大气压的氧分压)中，在约600℃-800℃下进行约10分钟至约1小时。
视需要，通过电镀或者本领域已知的其他方法在外电极上形成焊垫。本发明的多层陶瓷片式电容器可以例如通过焊接安装在印刷电路板上。
实施例
提供下面的实施例来说明本发明的优选方面，而不意图限制本发明的范围。
概述。制备多层陶瓷电容器，其具有纯镍电极，10个活性层，并且每个层为10-13微米厚，并且在还原性气氛(pO2为～10-10大气压)中在1225℃下烧结。进行了物理和电学测量。
实施例1
标记为样品1的介电组合物是通过在水中研磨如表4所示的适量的氧化物来形成的。在装有1％的C(一种聚合物抗絮凝剂，购自RT Vanderbilt Co.，Inc.，Norwalk，CT)的1L聚丙烯罐中，使用2mm YTZ(氧化钇稳定的氧化锆)将粉末研磨到D50为约0.65微米的颗粒。
表4：在烧成前样品1的配方
| BaZrO3 | SrZrO3 | CaTiO3 | Mg(OH)2 | H3BO3 | |
| 重量％ | 53.771 | 44.114 | 1.497 | 0.300 | 0.318 |
将干燥的粉末通过常规手段粉碎以提供实施例1的介电粉末。
最终粉末的平均粒度为0.3-1微米。然后，将100g上述粉末加入28.8g的包含聚乙烯丁醇、甲苯和乙醇的有机载体中，并且湿磨24小时以制备用于流延成型的浆料。将湿浆料涂覆到聚酯膜上以形成介电体粗带。该介电体粗带的厚度为约15微米。通过常规丝网印刷方法使用常规的镍膏将镍电极印刷到干燥的介电体粗带上。在5100psi的压力和130°F(54℃)的温度下，将总共10个薄片层叠并粘结以形成粗基片。在切割至合适的尺寸之后，使得在烧结和收缩(其通常在X和Y方向上均为15％-20％)之后，基片尺寸为约0.12”(L)x 0.06”(W)(EIA1206尺寸)或者0.08”(L)x 0.05”(W)(EIA0805尺寸)，根据表5的烧尽周期加热粗基片以去除有机载体。
表5：粘合剂去除条件
实施例1，首先在约265℃的温度下使基片去除其粘合剂，然后在1225℃的温度下在pO2为～10-10大气压的N2/H2/H2O气体混合物中烧结。该气体混合物是通过用水温为23℃的润湿器对N2/H2气体进行增湿来获得的。由此获得的基片通过转笼来磨掉边角。将形成外电极的铜膏(作为TM50-081购自Cleveland，Ohio的Ferro Corporation)施加至端面上，并且在干燥的氮气气氛中在775℃下烧成约70分钟以形成外电极。这样处理的多层电容器的尺寸为约3.2mm x 1.6mm(EIA 1206尺寸)，且具有可变的厚度。介电层的厚度为9.7微米，且内部镍电极层的厚度为约1.5微米。
多层片式电容器是由实施例1的粉末制备的，并且对其进行测试。烧成条件以及电性能汇总在表6中。
表6：用于实施例1的MLCC的烧成条件和电性能
在下面的项目中获得其他实施方案。
项目1.一种组合物，其包含前体混合物，并在烧成时形成了包含掺杂有少量钙和钛的钡-锶-锆酸盐基质的介电材料。
项目2.根据项目1所述的组合物，其中该混合物进一步包含这样的前体，使得在烧成时，该介电材料进一步包含一种或多种选自硼和镁的掺杂剂。
项目3.根据项目2所述的组合物，其中该介电材料表现出大于35的介电常数。
项目4.根据项目1所述的组合物，其包含前体混合物，并在烧成时形成了包含下列组分的介电材料：
约26.5重量％至约34.0重量％的BaO；
约18.0重量％至约24.5重量％的SrO；
约41.0重量％至约50.0重量％的ZrO2；
约0.50重量％至约1.50重量％的CaO；和
约0.70重量％至约2.50重量％的TiO2。
项目5.根据项目4所述的组合物，其中前体混合物进一步包含：
约0.01至约1.0重量％的B2O3；和
约0.01至约1.47重量％的MgO。
项目6.根据项目2所述的组合物，其包含前体混合物，并在烧成时形成了包含下列组分的介电材料：
约26.5重量％至约34.0重量％的BaO；
约18.0重量％至约24.5重量％的SrO；
约41.0重量％至约50.0重量％的ZrO2；
约0.50重量％至约1.50重量％的CaO；
约0.70重量％至约2.50重量％的TiO2；
约0.10重量％至约1.0重量％的B2O3；和
约0.31重量％至约1.47重量％的MgO。
项目7.一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约26.5重量％至约34.0重量％的BaO；
约18.0重量％至约24.5重量％的SrO；
约41.0重量％至约50.0重量％的ZrO2；
约0.50重量％至约1.50重量％的CaO；和
约0.70重量％至约2.50重量％的TiO2。
项目8.项目7的无铅无镉的介电膏，其进一步包含选自以下的至少一种：
约0.01至约1.0重量％的B2O3；
约0.01至约1.47重量％的MgO；
约0.01至约1.78重量％的H3BO3；和
约0.01至约2.14重量％的Mg(OH)2。
项目9.一种形成电子元件的方法，其包括：
将项目7或者项目8的介电膏施加至基底上；和
将基底在足以烧结介电膏的温度下进行烧成。
项目10.项目9的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目11.项目9的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目12.一种多层陶瓷片式电容器，其包括交替层叠的以下层的烧成集合体：
项目7或者项目8的介电膏的层；和
内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
项目13.项目12的多层陶瓷片式电容器，其中内电极材料包含镍。
项目14.一种形成电子元件的方法，其包括：
将以下层交替施加至基底上以形成层叠体：
项目7或者项目8的介电膏，和
含金属的电极膏；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中内电极层和介电层各自具有一定的层厚度。
项目15.项目14的方法，其中介电层在烧成后的厚度为约1微米至约50微米。
项目16.项目14的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目17.项目14的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目18.项目14的方法，其中含金属的电极膏包含镍。
项目19.一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约34.1重量％至约43.8重量％BaCO3；
约25.6重量％至约34.9重量％SrCO3；
约41.0重量％至约50.0重量％ZrO2；
约0.70重量％至约2.50重量％TiO2；和
约0.89重量％至约2.70重量％CaCO3。
项目20.项目19的无铅无镉的介电膏，其进一步包含选自以下的至少一种：
约0.01至约1.0重量％的B2O3；
约0.01至约1.47重量％的MgO；
约0.01至约1.78重量％的H3BO3；和
约0.01至约2.14重量％的Mg(OH)2。
项目21.一种形成电子元件的方法，其包括：
将项目19或者项目20的介电膏施加至基底上；和
将基底在足以烧结介电膏的温度下进行烧成。
项目22.项目21的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目23.项目21的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目24.一种多层陶瓷片式电容器，其包含交替层叠的以下层的烧成集合体：
项目19或者项目20的介电膏的层；和
内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
项目25.项目24的多层陶瓷片式电容器，其中内电极材料包含镍。
项目26.一种形成电子元件的方法，其包括：
将以下层交替施加至基底上以形成层叠体：
项目19或者项目20的介电膏的层，和
含金属的电极膏的层；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中内电极层和介电层各自具有一定的层厚度。
项目27.项目26的方法，其中介电层在烧成后的厚度为约1微米至约50微米。
项目28.项目26的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目29.项目26的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目30.项目26的方法，其中含金属的电极膏包含镍。
项目31.一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约47.8重量％至约61.3重量％的BaZrO3；
约1.6重量％至约5.7重量％的SrTiO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；和
约1.6重量％至约4.8重量％的CaZrO3。
项目32.项目31的介电膏，其中所述固体部分进一步包含选自以下的至少一种：
约0.01重量％至约7.3重量％的BaTiO3；
约0.01重量％至约1.0重量％的B2O3；
约0.01重量％至约1.47重量％的MgO；
约0.01重量％至约1.78重量％的H3BO3；和
约0.01重量％至约2.14重量％的Mg(OH)2。
项目33.一种形成电子元件的方法，其包括：
将项目31或者项目32的介电膏施加至基底上；和
将基底在足以烧结介电材料的温度下进行烧成。
项目34.项目33的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目35.项目33的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目36.一种多层陶瓷片式电容器，其包含交替层叠的以下层的烧成集合体：
项目31或者项目32的介电材料的层；和
内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
项目37.项目36的多层陶瓷片式电容器，其中内电极材料包含镍。
项目38.一种形成电子元件的方法，其包括：
将以下层交替施加至基底上以形成层叠体：
项目31或者项目32的介电膏的层，和
含金属的电极膏的层；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中内电极层和介电层各自具有一定的层厚度。
项目39.项目38的方法，其中介电层在烧成后的厚度为约1微米至约50微米。
项目40.项目38的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目41.项目38的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目42.项目38的方法，其中含金属的电极膏包含镍。
项目43.一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约47.8重量％至约61.3重量％的BaZrO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；
约0.1重量％至约2.14重量％的Mg(OH)2；和
约0.1重量％至约1.78重量％的H3BO3。
项目44.一种形成电子元件的方法，其包括：
将项目43的介电膏施加至基底上；和
将基底在足以烧结介电膏的温度下进行烧成。
项目45.项目44的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目46.项目44的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目47.一种多层陶瓷片式电容器，其包含交替层叠的以下层的烧成集合体：
项目43的介电膏的层；和
内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
项目48.项目47的多层陶瓷片式电容器，其中内电极材料包含镍。
项目49.一种形成电子元件的方法，其包含：
将以下层交替施加至基底上以形成层叠体：
项目43的包含介电材料的膏，和
含金属的电极膏；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中内电极层和介电层各自具有一定的层厚度。
项目50.项目49的方法，其中介电层在烧成后的厚度为约1微米至约50微米。
项目51.项目49的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
项目52.项目49的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
项目53.项目49的方法，其中含金属的电极膏包含镍。
项目54.项目14、26、38或者49任一项的方法，其进一步包括将含铜的膏施加至介电层和电极层的端部，并进行烧成以形成多层电容器。
另外的优点和修改是本领域技术人员容易想到的。因此，本发明在其更宽泛的方面不限于本文所示和所述的具体细节和示例性实例。因此，在不偏离由所附权利要求及其等同物所限定的总体发明构思的主旨或者范围的情况下，可以作出各种修改。
Claims (21)
1.一种组合物，其包含前体混合物，并在烧成时形成了包含以下组分的介电材料：
约26.5重量％至约34.0重量％的BaO；
约18.0重量％至约24.5重量％的SrO；
约41.0重量％至约50.0重量％的ZrO2；
约0.50重量％至约1.50重量％的CaO；和
约0.70重量％至约2.50重量％的TiO2。
2.根据权利要求1所述的组合物，其进一步包含这样的前体，使得在烧成时，介电材料进一步包含：
约0.01至约1.0重量％的B2O3；和
约0.01至约1.47重量％的MgO。
3.一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含权利要求1的介电材料。
4.根据权利要求3所述的无铅无镉的介电膏，其中所述固体部分进一步包含选自以下的至少一种：
约0.01至约1.0重量％的B2O3；
约0.01至约1.47重量％的MgO；
约0.01至约1.78重量％的H3BO3；和
约0.01至约2.14重量％的Mg(OH)2。
5.一种形成电子元件的方法，其包括：
将权利要求3或者权利要求4的介电膏施加至基底上；和
将基底在足以烧结介电膏的温度下进行烧成。
6.根据权利要求5所述的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
7.一种多层陶瓷片式电容器，其包含交替层叠的以下层的烧成集合体：
权利要求3或者权利要求4的介电膏的层；和
内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
8.根据权利要求7所述的多层陶瓷片式电容器，其中内电极材料包含镍。
9.一种形成电子元件的方法，其包括：
将以下层交替施加至基底上以形成层叠体：
权利要求3或者权利要求4的介电膏，以形成至少一种介电层，和
含金属的电极膏，以形成至少一种内电极层；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中内电极层和介电层各自具有一定的层厚度。
10.根据权利要求9所述的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
11.根据权利要求9所述的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
12.一种无铅无镉的介电组合物，其包含：
约47.8重量％至约61.3重量％的BaZrO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；
约0.1重量％至约2.14重量％的Mg(OH)2；和
约0.1重量％至约1.78重量％的H3BO3。
13.一种无铅无镉的介电膏，其包含固体部分，其中所述固体部分包含：
约47.8重量％至约61.3重量％的BaZrO3；
约39.4重量％至约53.6重量％的SrZrO3；
约1.2重量％至约3.6重量％的CaTiO3；
约0.1重量％至约2.14重量％的Mg(OH)2；和
约0.1重量％至约1.78重量％的H3BO3。
14.一种形成电子元件的方法，其包括：
将权利要求13的介电膏施加至基底上；和
将基底在足以烧结介电膏的温度下进行烧成。
15.根据权利要求14所述的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
16.根据权利要求14所述的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
17.一种多层陶瓷片式电容器，其包含交替层叠的以下层的烧成集合体：
权利要求13的介电膏的层；和
内电极材料的层，其包含除了Ag、Au、Pd或者Pt之外的过渡金属。
18.根据权利要求17所述的多层陶瓷片式电容器，其中内电极材料包含镍。
19.一种形成电子元件的方法，其包括：
将以下层交替施加至基底上以形成层叠体：
权利要求13的含介电材料的膏，以形成至少一种介电层，和
含金属的电极膏，以形成至少一种内电极层；
将层叠体切割成预定形状；
将切割的层叠体与基底分离；和
将层叠体进行烧成，以使电极膏中的金属致密化并使介电膏烧结，其中至少一个内电极层和至少一个介电层各自具有一定的层厚度。
20.根据权利要求19所述的方法，其中烧成是在约1200℃至约1350℃的温度下进行的。
21.根据权利要求19所述的方法，其中烧成是在氧分压为约10-12大气压至约10-8大气压的气氛中进行的。
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| WO2017023452A1 (en) * | 2015-08-05 | 2017-02-09 | Ferro Corporation | High-k ltcc dieletric compositions and devices |
| KR20190121137A (ko) | 2018-08-06 | 2019-10-25 | 삼성전기주식회사 | 유전체 조성물 및 이를 이용한 전자 부품 |
| CN113242844B (zh) * | 2019-02-27 | 2023-08-08 | 费罗公司 | 具有高q值的ltcc介电组合物和装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001294481A (ja) * | 2000-02-09 | 2001-10-23 | Matsushita Electric Ind Co Ltd | 誘電体磁器組成物とこれを用いた積層セラミックコンデンサ |
| US20030125192A1 (en) * | 2001-12-27 | 2003-07-03 | Samsung Electro-Mechanics Co., Ltd. | Nonreducible dielectric ceramic composition |
| CN101607819A (zh) * | 2009-07-17 | 2009-12-23 | 苏州达方电子有限公司 | 介电陶瓷组合物及其所制成的积层陶瓷电容器 |
| US8114801B2 (en) * | 2005-09-28 | 2012-02-14 | Ferro Corporation | COG dieletric composition for use with nickel electrodes |
| CN104282433A (zh) * | 2013-07-11 | 2015-01-14 | 三星电机株式会社 | 多层电容器 |
| US9613756B2 (en) * | 2011-01-21 | 2017-04-04 | Murata Manufacturing Co., Ltd. | Laminated ceramic capacitor |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1478809A (en) * | 1975-11-11 | 1977-07-06 | Standard Telephones Cables Ltd | Monolithic cermic capacitors |
| US4379319A (en) | 1982-02-18 | 1983-04-05 | Ferro Corporation | Monolithic ceramic capacitors and improved ternary ceramic compositions for producing same |
| US4540676A (en) | 1984-05-23 | 1985-09-10 | Tam Ceramics | Low temperature fired dielectric ceramic composition with flat TC characteristic and method of making |
| JPS61275164A (ja) | 1985-05-03 | 1986-12-05 | タム セラミツクス インコ−ポレイテツド | 誘電体セラミック組成物 |
| US4816430A (en) | 1987-06-09 | 1989-03-28 | Tam Ceramics, Inc. | Dielectric ceramic composition |
| US5258335A (en) | 1988-10-14 | 1993-11-02 | Ferro Corporation | Low dielectric, low temperature fired glass ceramics |
| US5296426A (en) | 1990-06-15 | 1994-03-22 | E. I. Du Pont De Nemours And Company | Low-fire X7R compositions |
| JP2605987B2 (ja) * | 1991-02-19 | 1997-04-30 | 株式会社村田製作所 | 誘電体磁器組成物 |
| US5601673A (en) | 1995-01-03 | 1997-02-11 | Ferro Corporation | Method of making ceramic article with cavity using LTCC tape |
| US5661882A (en) | 1995-06-30 | 1997-09-02 | Ferro Corporation | Method of integrating electronic components into electronic circuit structures made using LTCC tape |
| US5571767A (en) | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
| DE19546237A1 (de) | 1995-12-12 | 1997-06-19 | Philips Patentverwaltung | Vielschichtkondensator mit Dielektrikum aus modifiziertem Bariumstrontiumtitanat |
| DE69707247T2 (de) | 1996-06-14 | 2002-11-07 | Dmc2 Electronic Materials B V | Keramischer vielschichtkondensator |
| US6043174A (en) | 1997-06-26 | 2000-03-28 | Mra Laboratories | High dielectric constant X7R ceramic capacitor, and powder for making |
| JP3305626B2 (ja) | 1997-07-22 | 2002-07-24 | 太陽誘電株式会社 | 誘電体磁器組成物とこの誘電体磁器組成物を用いたセラミック電子部品 |
| DE19737324A1 (de) | 1997-08-28 | 1999-03-04 | Philips Patentverwaltung | Vielschichtkondensator mit silber- und seltenerdmetalldotiertem Bariumtitanat |
| JP3586148B2 (ja) * | 1998-09-30 | 2004-11-10 | Ｔｄｋ株式会社 | 非還元性誘電体磁器材料およびその製造方法ならびに積層磁器コンデンサ |
| US6185087B1 (en) | 1999-04-08 | 2001-02-06 | Kemet Electronics Corp. | Multilayer ceramic chip capacitor with high reliability compatible with nickel electrodes |
| US6723673B2 (en) | 2000-08-31 | 2004-04-20 | Mra Laboratories, Inc. | High dielectric constant very low fired X7R ceramic capacitor, and powder for making |
| JP3992647B2 (ja) | 2003-05-28 | 2007-10-17 | Ｔｄｋ株式会社 | 抵抗体ペースト、抵抗体および電子部品 |
| TWI287811B (en) * | 2005-02-04 | 2007-10-01 | Murata Manufacturing Co | Multilayer ceramic capacitor and method for manufacturing the same |
| US7230817B2 (en) | 2005-04-15 | 2007-06-12 | Ferro Corporation | Y5V dielectric composition |
| US7161795B1 (en) | 2005-09-26 | 2007-01-09 | Ferro Corporation | COG dielectric composition for use with copper electrodes |
| CN101272991B (zh) * | 2005-09-28 | 2012-01-18 | 费罗公司 | 用于与镍电极一起使用的cog电介质组合物 |
| US7547369B2 (en) | 2006-08-31 | 2009-06-16 | Ferro Corporation | Method of making multilayer structures using tapes on non-densifying substrates |
| KR101161614B1 (ko) | 2006-11-30 | 2012-07-03 | 한국세라믹기술원 | 비유리계 마이크로파 유전체 세라믹스 및 그 제조방법 |
| US7541306B2 (en) | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
| US7521390B2 (en) | 2007-03-05 | 2009-04-21 | Ferro Corporation | Ultra low temperature fixed X7R and BX dielectric ceramic composition and method of making |
| US8305731B2 (en) | 2007-11-06 | 2012-11-06 | Ferro Corporation | Lead and cadmium free, low temperature fired X7R dielectric ceramic composition and method of making |
| CN104520950B (zh) * | 2012-08-09 | 2017-03-29 | 株式会社村田制作所 | 层叠陶瓷电容器及其制造方法 |
| KR102064008B1 (ko) | 2013-01-15 | 2020-02-17 | 삼성전기주식회사 | 적층 커패시터, 적층 커패시터가 실장된 기판 |
| WO2015065591A1 (en) | 2013-10-30 | 2015-05-07 | Ferro Corporation | Cog dielectric composition for use with nickel electrodes |
| WO2016137790A1 (en) | 2015-02-27 | 2016-09-01 | Ferro Corporation | Low-k and mid-k ltcc dielectric compositions and devices |
-
2016
- 2016-06-21 TW TW105119415A patent/TWI634092B/zh active
- 2016-06-27 JP JP2018503483A patent/JP6586507B2/ja not_active Expired - Fee Related
- 2016-06-27 US US15/317,545 patent/US9852848B2/en active Active
- 2016-06-27 WO PCT/US2016/039502 patent/WO2017014918A1/en active Application Filing
- 2016-06-27 SI SI201631807T patent/SI3892600T1/sl unknown
- 2016-06-27 CN CN201680042930.0A patent/CN107848893B/zh active Active
- 2016-06-27 KR KR1020177036330A patent/KR102024028B1/ko active IP Right Grant
- 2016-06-27 EP EP21176459.2A patent/EP3892600B1/en active Active
- 2016-06-27 EP EP16828201.0A patent/EP3268329A4/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001294481A (ja) * | 2000-02-09 | 2001-10-23 | Matsushita Electric Ind Co Ltd | 誘電体磁器組成物とこれを用いた積層セラミックコンデンサ |
| US20030125192A1 (en) * | 2001-12-27 | 2003-07-03 | Samsung Electro-Mechanics Co., Ltd. | Nonreducible dielectric ceramic composition |
| US8114801B2 (en) * | 2005-09-28 | 2012-02-14 | Ferro Corporation | COG dieletric composition for use with nickel electrodes |
| CN101607819A (zh) * | 2009-07-17 | 2009-12-23 | 苏州达方电子有限公司 | 介电陶瓷组合物及其所制成的积层陶瓷电容器 |
| US9613756B2 (en) * | 2011-01-21 | 2017-04-04 | Murata Manufacturing Co., Ltd. | Laminated ceramic capacitor |
| CN104282433A (zh) * | 2013-07-11 | 2015-01-14 | 三星电机株式会社 | 多层电容器 |
Non-Patent Citations (1)
| Title |
|---|
| 黄新友等: "工业化(Ba,Sr,Ca)(Ti,Zr)O_3基电容器陶瓷的研究 ", 《仪器仪表学报》 * |
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| WO2017014918A1 (en) | 2017-01-26 |
| KR102024028B1 (ko) | 2019-09-23 |
| US9852848B2 (en) | 2017-12-26 |
| KR20180011162A (ko) | 2018-01-31 |
| SI3892600T1 (sl) | 2024-05-31 |
| JP6586507B2 (ja) | 2019-10-02 |
| TWI634092B (zh) | 2018-09-01 |
| EP3892600A1 (en) | 2021-10-13 |
| TW201722883A (zh) | 2017-07-01 |
| EP3892600B1 (en) | 2023-12-20 |
| EP3268329A4 (en) | 2019-01-09 |
| EP3268329A1 (en) | 2018-01-17 |
| CN107848893B (zh) | 2021-12-31 |
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| US20170200557A1 (en) | 2017-07-13 |
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