JP6586507B2 - ニッケル電極用cog誘電体組成物 - Google Patents
ニッケル電極用cog誘電体組成物 Download PDFInfo
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- JP6586507B2 JP6586507B2 JP2018503483A JP2018503483A JP6586507B2 JP 6586507 B2 JP6586507 B2 JP 6586507B2 JP 2018503483 A JP2018503483 A JP 2018503483A JP 2018503483 A JP2018503483 A JP 2018503483A JP 6586507 B2 JP6586507 B2 JP 6586507B2
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- 239000000203 mixture Substances 0.000 title claims description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims description 50
- 229910052759 nickel Inorganic materials 0.000 title claims description 24
- 238000010304 firing Methods 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 55
- 239000003990 capacitor Substances 0.000 claims description 39
- 239000003989 dielectric material Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 25
- 239000012298 atmosphere Substances 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 21
- 239000002003 electrode paste Substances 0.000 claims description 19
- 239000002243 precursor Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 16
- 239000007772 electrode material Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- 150000003624 transition metals Chemical class 0.000 claims description 7
- 238000001354 calcination Methods 0.000 claims 4
- 239000004020 conductor Substances 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 239000010953 base metal Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 230000001603 reducing effect Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910000990 Ni alloy Inorganic materials 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 239000010944 silver (metal) Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical class [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 2
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- NNRLDGQZIVUQTE-UHFFFAOYSA-N gamma-Terpineol Chemical compound CC(C)=C1CCC(C)(O)CC1 NNRLDGQZIVUQTE-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000006072 paste Substances 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- ISJNRPUVOCDJQF-UHFFFAOYSA-N (1-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)CC(C)(C)C(O)OC(=O)C(C)C ISJNRPUVOCDJQF-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- UHALKNGKVBXOBL-UHFFFAOYSA-N [B+]=O.[O-2].[Mg+2] Chemical compound [B+]=O.[O-2].[Mg+2] UHALKNGKVBXOBL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229940087291 tridecyl alcohol Drugs 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
- B28B11/12—Apparatus or processes for treating or working the shaped or preshaped articles for removing parts of the articles by cutting
- B28B11/125—Cutting-off protruding ridges, also profiled cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/636—Polysaccharides or derivatives thereof
- C04B35/6365—Cellulose or derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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Description
誘電体層を形成するためのペーストは、本明細書に開示されているように、有機ビヒクルを、様々な酸化物を含む誘電体原料と混合して得ることができる。また、上述したように、焼成によりこのような酸化物及び複合酸化物に転化する前駆体化合物も使用できる。誘電体材料は、このような酸化物又はこのような酸化物の前駆体を含有する化合物を選択し、適切な割合でこれらを混合して得られる。誘電体原料中におけるこのような化合物の割合は、焼成後に所望の誘電体層組成物が得られるように決定される。誘電体原料は、通常、約0.1〜約3μm、より好ましくは約1μm以下の平均粒径を有する粉末状態で使用される。
有機ビヒクルは、有機溶媒中のバインダ、又は水中のバインダである。本書において使用されるバインダの選択は重要ではないが、エチルセルロース、ポリビニルブタノール、エチルセルロース、及びヒドロキシプロピルセルロース等の従来のバインダ、並びにこれらの組み合わせが溶媒と使用するのに適している。有機溶媒もまた重要ではなく、特定の適用方法(すなわち、印刷又はシート化)に従って、ブチルカルビトール、アセトン、トルエン、エタノール、ジエチレングリコールブチルエーテル;2,2,4−トリメチルペンタンジオールモノイソブチレート(テキサノール(Texanol)(登録商標));α−テルピネオール;β−テルピネオール;γ−テルピネオール;トリデシルアルコール;ジエチレングリコールエチルエーテル(カルビトール(Carbitol)(登録商標))、ジエチレングリコールブチルエーテル(ブチルカルビトール(Butyl Carbitol)(登録商標))、及びプロピレングリコール;並びにこれらの混合物など、従来の有機溶媒から選択することができる。テキサノール(登録商標)の商標で販売されている製品は、テネシー州キングスポートのイーストマンケミカル社(Eastman Chemical Company)から入手可能であり、また、ダワノール(Dowanol)(登録商標)及びカルビトール(登録商標)の商標で販売されている製品は、ミシガン州ミッドランドのダウケミカル社(Dow Chemical Co.)から入手可能である。
内部電極層を形成するペーストは、導電性材料を有機ビヒクルと混合して得ることができる。本書で使用される導電性材料には、本書に記載した導電性金属及び合金等の導電体、並びに焼成によりそのような導電体に転化する様々な化合物(例えば、酸化物、有機金属化合物、樹脂酸塩など)が含まれる。
銅、ニッケル、及び、Mn、Cr、Co、もしくはAlを選択的に含有する銅及びニッケルのいずれか又は両方の合金などの安価な金属が好ましいが、外部電極4を形成する導電体は重要ではない。外部電極層の厚さは個々の用途に合わせて調節することができるが、一般的に、前記層は厚さ約10〜約50μm、好ましくは厚さ約20〜約40μmである。外部電極を形成するためのペーストは、内部電極と同様の方法で調製される。
その後、グリーンチップは、内部電極層形成ペースト内の導電体の種類によって決定される雰囲気下で焼成される。内部電極層がニッケル及びニッケル合金などの卑金属導電体で形成される場合、焼成雰囲気は、約10−12〜約10−8atmの酸素分圧を有することができる。約10−12atm未満の低圧では、導電体が異常焼結されて誘電体層から分離する場合があるため、約10−12atm未満の分圧での焼結は避けるべきである。約10−8atmを超える酸素分圧下では、内部電極層が酸化する場合がある。約10−11〜約10−9atmの酸素分圧が最も好ましい。
純ニッケル電極、10個の活性層を備え、各層が厚さ10〜13μmである積層セラミックコンデンサを作製し、1225℃の還元性雰囲気(〜10−10atmのpO2)において焼結させた。物理的及び電気的測定が行われた。
試料1として特定された誘電体組成物は、表4に示された適量の酸化物を水中で粉砕(milling)することによって形成された。粉末は、コネティカット州ノーウォークにあるRTヴァンダービルト社(RT Vanderbilt Co., Inc.)から入手可能なポリマー分散剤(polymeric deflocculant)、1%ダーバン(Darvan)(登録商標)Cを含む1リットルポリプロピレンジャーにおいて、2mmYTZ(イットリア安定化ジルコニア)を使用して、粒子D50が約0.65μmとなるまで粉砕した。
少量のカルシウム及びチタンでドープされたジルコン酸バリウムストロンチウムマトリックス(barium-strontium-zirconate matrix)を含む誘電体材料を、焼成により(焼成時に)、形成する前駆体の混合物を含む組成物。
前記混合物が、ホウ素及びマグネシウムからなる群から選択される1つ又は複数のドーパントをさらに含む前記誘電体材料に焼成によってなる前駆体をさらに含む、項目1に記載の組成物。
前記誘電体材料が35よりも高い誘電率を示す、項目2に記載の組成物。
約26.5質量%〜約34.0質量%のBaO;
約18.0質量%〜約24.5質量%のSrO;
約41.0質量%〜約50.0質量%のZrO2;
約0.50質量%〜約1.50質量%のCaO;及び
約0.70質量%〜約2.50質量%のTiO2;
を含む誘電体材料を、焼成により(焼成時に)、形成する前駆体混合物を含む、項目1に記載の組成物。
前記前駆体混合物が、
約0.01質量%〜約1.0質量%のB2O3;及び
約0.01質量%〜約1.47質量%のMgO;
をさらに含む、項目4に記載の組成物。
約26.5質量%〜約34.0質量%のBaO;
約18.0質量%〜約24.5質量%のSrO;
約41.0質量%〜約50.0質量%のZrO2;
約0.50質量%〜約1.50質量%のCaO;
約0.70質量%〜約2.50質量%のTiO2;
約0.10質量%〜約1.0質量%のB2O3;及び
約0.31質量%〜約1.47質量%のMgO;
を含む誘電体材料を、焼成により、形成する前駆体混合物を含む、項目2に記載の組成物。
固体部(solids portion)を含み、
前記固体部が、
約26.5質量%〜約34.0質量%のBaO;
約18.0質量%〜約24.5質量%のSrO;
約41.0質量%〜約50.0質量%のZrO2;
約0.50質量%〜約1.50質量%のCaO;及び
約0.70質量%〜約2.50質量%のTiO2;
を含む、鉛フリーかつカドミウムフリーの誘電体ペースト。
約0.01質量%〜約1.0質量%のB2O3;
約0.01質量%〜約1.47質量%のMgO;
約0.01質量%〜約1.78質量%のH3BO3;及び
約0.01質量%〜約2.14質量%のMg(OH)2;
からなる群から選択される少なくとも1つをさらに含む、請求項7に記載の鉛フリーかつカドミウムフリーの誘電体ペースト。
項目7又は項目8に記載の誘電体ペーストを基材に塗布(適用)する工程と、
前記誘電体ペーストを焼結するのに十分な温度で前記基材を焼成する工程と、
を含む、電子部品を形成する方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目9に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目9に記載の方法。
項目7又は項目8に記載の誘電体ペーストの層と、
Ag、Au、Pd、又はPt以外の遷移金属を含む内部電極材料の層と、
が交互に積層された焼成集合体(fired collection)を備える積層セラミックチップコンデンサ。
前記内部電極材料がニッケルを含む、項目12に記載の積層セラミックチップコンデンサ。
基材上に、
項目7又は項目8に記載の誘電体ペーストの層と、
金属含有電極ペーストの層と、
を交互に塗布(適用)して、薄層積層体(laminar stack)を形成する工程と;
前記薄層積層体を所定の形状に切断する工程と、
切断した前記積層体を前記基材から分離する工程と、
前記積層体を焼成して、前記電極ペースト中の前記金属を緻密化すると共に、前記誘電体ペーストを焼結する工程と、を含み、
前記内部電極層及び前記誘電体層が、それぞれ、層の厚さを有する、電子部品を形成する方法。
焼成後に、前記誘電体の層が約1μm〜約50μmの厚さを有する、項目14に記載の方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目14に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目14に記載の方法。
前記金属含有電極ペーストがニッケルを含む、項目14に記載の方法。
固体部を含み、
前記固体部が、
約34.1質量%〜約43.8質量%のBaCO3;
約25.6質量%〜約34.9質量%のSrCO3;
約41.0質量%〜約50.0質量%のZrO2;
約0.70質量%〜約2.50質量%のTiO2;及び
約0.89質量%〜約2.70質量%のCaCO3;
を含む、鉛フリーかつカドミウムフリーの誘電体ペースト。
約0.01質量%〜約1.0質量%のB2O3;
約0.01質量%〜約1.47質量%のMgO;
約0.01質量%〜約1.78質量%のH3BO3;及び
約0.01質量%〜約2.14質量%のMg(OH)2;
からなる群から選択される少なくとも1つをさらに含む、請求項19に記載の鉛フリーかつカドミウムフリーの誘電体ペースト。
項目19又は項目20に記載の誘電体ペーストを基材に塗布(適用)する工程と、
前記誘電体ペーストを焼結するのに十分な温度で前記基材を焼成する工程と、
を含む、電子部品を形成する方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目21に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目21に記載の方法。
項目19又は項目20に記載の誘電体ペーストの層と、
Ag、Au、Pd、又はPt以外の遷移金属を含む内部電極材料の層と、
が交互に積層された焼成集合体を備える積層セラミックチップコンデンサ。
前記内部電極材料がニッケルを含む、項目24に記載の積層セラミックチップコンデンサ。
基材上に、
項目19又は項目20に記載の誘電体ペーストの層と、
金属含有電極ペーストの層と、
を交互に塗布(適用)して、薄層積層体を形成する工程と;
前記薄層積層体を所定の形状に切断する工程と、
切断した前記積層体を前記基材から分離する工程と、
前記積層体を焼成して、前記電極ペースト中の前記金属を緻密化すると共に、前記誘電体ペーストを焼結する工程と、を含み、
前記内部電極層及び前記誘電体層が、それぞれ、層の厚さを有する、電子部品を形成する方法。
焼成後に、前記誘電体の層が約1μm〜約50μmの厚さを有する、項目26に記載の方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目26に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目26に記載の方法。
前記金属含有電極ペーストがニッケルを含む、項目26に記載の方法。
固体部を含み、
前記固体部が、
約47.8質量%〜約61.3質量%のBaZrO3;
約1.6質量%〜約5.7質量%のSrTiO3;
約39.4質量%〜約53.6質量%のSrZrO3;
約1.2質量%〜約3.6質量%のCaTiO3;及び
約1.6質量%〜約4.8質量%のCaZrO3;
を含む、鉛フリーかつカドミウムフリーの誘電体ペースト。
前記固体部が、
約0.01質量%〜約7.3質量%のBaTiO3;
約0.01質量%〜約1.0質量%のB2O3;
約0.01質量%〜約1.47質量%のMgO;
約0.01質量%〜約1.78質量%のH3BO3;及び
約0.01質量%〜約2.14質量%のMg(OH)2;
からなる群から選択される少なくとも1つをさらに含む、請求項31に記載の誘電体ペースト。
項目31又は項目32に記載の誘電体ペーストを基材に塗布(適用)する工程と、
前記誘電体ペーストを焼結するのに十分な温度で前記基材を焼成する工程と、
を含む、電子部品を形成する方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目33に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目33に記載の方法。
項目31又は項目32に記載の誘電体材料の層と、
Ag、Au、Pd、又はPt以外の遷移金属を含む内部電極材料の層と、
が交互に積層された焼成集合体を備える積層セラミックチップコンデンサ。
前記内部電極材料がニッケルを含む、項目36に記載の積層セラミックチップコンデンサ。
基材上に、
項目31又は項目32に記載の誘電体ペーストの層と、
金属含有電極ペーストの層と、
を交互に塗布(適用)して、薄層積層体を形成する工程と;
前記薄層積層体を所定の形状に切断する工程と、
切断した前記積層体を前記基材から分離する工程と、
前記積層体を焼成して、前記電極ペースト中の前記金属を緻密化すると共に、前記誘電体ペーストを焼結する工程と、を含み、
前記内部電極層及び前記誘電体層が、それぞれ、層の厚さを有する、電子部品を形成する方法。
焼成後に、前記誘電体の層が約1μm〜約50μmの厚さを有する、項目38に記載の方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目38に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目38に記載の方法。
前記金属含有電極ペーストがニッケルを含む、項目38に記載の方法。
固体部を含み、
前記固体部が、
約47.8質量%〜約61.3質量%のBaZrO3;
約39.4質量%〜約53.6質量%のSrZrO3;
約1.2質量%〜約3.6質量%のCaTiO3;
約0.1質量%〜約2.14質量%のMg(OH)2;及び
約0.1質量%〜約1.78質量%のH3BO3;
を含む、鉛フリーかつカドミウムフリーの誘電体ペースト。
項目43に記載の誘電体ペーストを基材に塗布(適用)する工程と、
前記誘電体ペーストを焼結するのに十分な温度で前記基材を焼成する工程と、
を含む、電子部品を形成する方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目44に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目44に記載の方法。
項目43に記載の誘電体ペーストの層と、
Ag、Au、Pd、又はPt以外の遷移金属を含む内部電極材料の層と、
が交互に積層された焼成集合体を備える積層セラミックチップコンデンサ。
前記内部電極材料がニッケルを含む、項目47に記載の積層セラミックチップコンデンサ。
基材上に、
項目43に記載のペーストを含む誘電体材料の層と、
金属含有電極ペーストの層と、
を交互に塗布(適用)して、薄層積層体を形成する工程と;
前記薄層積層体を所定の形状に切断する工程と、
切断した前記積層体を前記基材から分離する工程と、
前記積層体を焼成して、前記電極ペースト中の前記金属を緻密化すると共に、前記誘電体ペーストを焼結する工程と、を含み、
前記内部電極層及び前記誘電体層が、それぞれ、層の厚さを有する、電子部品を形成する方法。
焼成後に、前記誘電体の層が約1μm〜約50μmの厚さを有する、項目49に記載の方法。
前記焼成は、約1200℃〜約1350℃の温度で行う、項目49に記載の方法。
前記焼成は、約10−12atm〜約10−8atmの酸素分圧を有する雰囲気で行う、項目49に記載の方法。
前記金属含有電極ペーストがニッケルを含む、項目49に記載の方法。
前記誘電体層及び前記電極層の端部に銅含有ペーストを塗布(適用)する工程と、焼成して、積層コンデンサを形成する工程と、をさらに含む、項目14、26、38又は49のいずれかに記載の方法。
2 誘電体層
3 内部電極層
4 外部電極
Claims (21)
- 26.5質量%〜34.0質量%のBaO;
18.0質量%〜24.5質量%のSrO;
41.0質量%〜50.0質量%のZrO2;
0.50質量%〜1.50質量%のCaO;及び
0.70質量%〜2.50質量%のTiO2;
を含む誘電体材料を焼成により形成する前駆体混合物を含む、組成物。 - 焼成により、前記誘電体材料が、
0.01質量%〜1.0質量%のB2O3;及び
0.01質量%〜1.47質量%のMgO;
をさらに含むような前駆体をさらに含む、請求項1に記載の組成物。 - 固体部を含み、
前記固体部が請求項1に記載の誘電体材料を含む、鉛フリーかつカドミウムフリーの誘電体ペースト。 - 前記固体部が、
0.01質量%〜1.0質量%のB2O3;
0.01質量%〜1.47質量%のMgO;
0.01質量%〜1.78質量%のH3BO3;及び
0.01質量%〜2.14質量%のMg(OH)2;
からなる群から選択される少なくとも1つをさらに含む、請求項3に記載の鉛フリーかつカドミウムフリーの誘電体ペースト。 - 請求項3又は請求項4に記載の誘電体ペーストを基材に塗布する工程と、
前記誘電体ペーストを焼結するのに十分な温度で前記基材を焼成する工程と、
を含む、電子部品を形成する方法。 - 前記焼成は、1200℃〜1350℃の温度で行う、請求項5に記載の方法。
- 請求項3又は請求項4に記載の誘電体ペーストの層と、
Ag、Au、Pd、又はPt以外の遷移金属を含む内部電極材料の層と、
が交互に積層された焼成集合体を備える積層セラミックチップコンデンサ。 - 前記内部電極材料がニッケルを含む、請求項7に記載の積層セラミックチップコンデンサ。
- 基材上に、
少なくとも1つの誘電体層を形成するための、請求項3又は請求項4に記載の誘電体ペーストの層、及び
少なくとも1つの内部電極層を形成するための金属含有電極ペーストの層
を交互に塗布して、薄層積層体を形成する工程と;
前記薄層積層体を所定の形状に切断する工程と、
切断した前記積層体を前記基材から分離する工程と、
前記積層体を焼成して、前記電極ペースト中の前記金属を緻密化すると共に、前記誘電体ペーストを焼結する工程と、を含み、
前記内部電極層及び前記誘電体層がそれぞれ層の厚さを有する、電子部品を形成する方法。 - 前記焼成は、1200℃〜1350℃の温度で行う、請求項9に記載の方法。
- 前記焼成は、10−12atm〜10−8atmの酸素分圧を有する雰囲気で行う、請求項9に記載の方法。
- 47.8質量%〜61.3質量%のBaZrO3;
39.4質量%〜53.6質量%のSrZrO3;
1.2質量%〜3.6質量%のCaTiO3;
0.1質量%〜2.14質量%のMg(OH)2;及び
0.1質量%〜1.78質量%のH3BO3;
を含む、鉛フリーかつカドミウムフリーの誘電体組成物。 - 固体部を含み、
前記固体部が、
47.8質量%〜61.3質量%のBaZrO3;
39.4質量%〜53.6質量%のSrZrO3;
1.2質量%〜3.6質量%のCaTiO3;
0.1質量%〜2.14質量%のMg(OH)2;及び
0.1質量%〜1.78質量%のH3BO3;
を含む、鉛フリーかつカドミウムフリーの誘電体ペースト。 - 請求項13に記載の誘電体ペーストを基材に塗布する工程と、
前記誘電体ペーストを焼結するのに十分な温度で前記基材を焼成する工程と、
を含む、電子部品を形成する方法。 - 前記焼成は、1200℃〜1350℃の温度で行う、請求項14に記載の方法。
- 前記焼成は、10−12atm〜10−8atmの酸素分圧を有する雰囲気で行う、請求項14に記載の方法。
- 請求項13に記載の誘電体ペーストの層と、
Ag、Au、Pd、又はPt以外の遷移金属を含む内部電極材料の層と、
が交互に積層された焼成集合体を備える積層セラミックチップコンデンサ。 - 前記内部電極材料がニッケルを含む、請求項17に記載の積層セラミックチップコンデンサ。
- 基材上に、
少なくとも1つの誘電体層を形成するための、請求項13に記載のペーストを含む誘電体材料の層、及び
少なくとも1つの内部電極層を形成するための金属含有電極ペーストの層
を交互に塗布して、薄層積層体を形成する工程と;
前記薄層積層体を所定の形状に切断する工程と、
切断した前記積層体を前記基材から分離する工程と、
前記積層体を焼成して、前記電極ペースト中の前記金属を緻密化すると共に、前記誘電体ペーストを焼結する工程と、を含み、
前記少なくとも1つの内部電極層及び前記少なくとも1つの誘電体層がそれぞれ層の厚さを有する、電子部品を形成する方法。 - 前記焼成は、1200℃〜1350℃の温度で行う、請求項19に記載の方法。
- 前記焼成は、10−12atm〜10−8atmの酸素分圧を有する雰囲気で行う、請求項19に記載の方法。
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