CN107845718A - The preparation method that a kind of base material chooses the LED light source of flexible new structure - Google Patents
The preparation method that a kind of base material chooses the LED light source of flexible new structure Download PDFInfo
- Publication number
- CN107845718A CN107845718A CN201610825634.XA CN201610825634A CN107845718A CN 107845718 A CN107845718 A CN 107845718A CN 201610825634 A CN201610825634 A CN 201610825634A CN 107845718 A CN107845718 A CN 107845718A
- Authority
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- China
- Prior art keywords
- led
- base material
- support
- chip
- light source
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- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052709 silver Inorganic materials 0.000 claims abstract description 19
- 239000004332 silver Substances 0.000 claims abstract description 19
- 150000002739 metals Chemical class 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 17
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 14
- 239000000047 product Substances 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 5
- 239000011265 semifinished product Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000011324 bead Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 241000218202 Coptis Species 0.000 claims 4
- 235000001674 Agaricus brunnescens Nutrition 0.000 claims 3
- 244000247747 Coptis groenlandica Species 0.000 abstract description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 235000003392 Curcuma domestica Nutrition 0.000 abstract description 2
- 244000008991 Curcuma longa Species 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000031709 bromination Effects 0.000 abstract description 2
- 238000005893 bromination reaction Methods 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 235000003373 curcuma longa Nutrition 0.000 abstract description 2
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- 235000013976 turmeric Nutrition 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052946 acanthite Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- 208000003351 Melanosis Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The preparation method that the LED light source of flexible new structure is chosen the invention discloses a kind of base material, it is related to LED light source technical field；The top of base material is filled glue material by base material and is fixedly connected with LED support, and LED support mutually detains flush mounting using inverted T shaped or mushroom-head, and described carrier cup bottom is provided with chip, and gold thread is welded with chip, is packaged with fluorescent glue above chip and gold thread.Substrate body chooses the metals (or various metals and compound) such as flexible, copper, aluminium, iron.Handled by vacuum sputtering technique or some special process, in face face, turmeric category and metal oxide, protect base material not cure; bromination, oxidation etc., passes through control surface titanium oxide; aluminum oxide (silica) and silver thickness; LED support substrate front side surface routing is realized, is welded, support reverse side soldering tin technique; and product size; structure, rack forming, processing skill variation.
Description
Technical field
The preparation method that the LED light source of flexible new structure is chosen the present invention relates to a kind of base material, belongs to LED light source skill
Art field.
Background technology
LED is in widespread attention and developed rapidly more than appearance, be with itself possessed by advantage point
Do not open.These advantages sum up：Brightness is high, operating voltage is low, small power consumption, miniaturization, long lifespan, impact resistance and performance
It is stable.LED development prospect is extremely wide, at present just towards more high brightness, more high weather resistance, higher luminous density, more
High uniformity of luminance direction is developed.But actual during production and application LED product, we often meet with " product sulphur
Change causes product failure (comprising contamination phenomenons such as vulcanization, halogenation, oxidations) " the problems such as, these problems are to client and manufacturer
Certain loss is all brought, after there is vulcanization reaction, product function area meeting melanism, luminous flux can be gradually reduced, and colour temperature occurs obvious
Drift.Its principle is：Because the support of paster LED is silver-plated on metal base（Silver layer can play shinny, the work of reflected light
With）, LED encountered sulphur or sulfur vapor in high-temperature soldering, then can cause the silver layer on support that chemical reaction 2Ag occurs with sulphur
+ S=Ag2S ↓, formed Ag2S, visual response amount number, its color is yellow or black.The silver layer of most serious all reacts
It is complete, spun gold fracture, cause LED to open a way.
The content of the invention
In view of the above-mentioned problems, the technical problem to be solved in the present invention is to provide a kind of base material to choose flexible new structure
The preparation method of LED light source.
The base material of the present invention chooses the LED light source of flexible new structure.It includes base material 1, support filling glue material a, LED
Support 2, fluorescent glue 3, chip 4, gold thread 5 and inverted T shaped or mushroom-head mutually detain flush mounting 6, and base material 1 and glue material a pass through certain
Technological forming LED support 2, the bottom of a cup of support 2 are provided with chip 4, gold thread 5, flip LED chips are welded with packed LED chip 4
4 weld with the bottom of a cup of support 2, and the top of chip 4 and gold thread 5 is packaged with fluorescent glue 3.
Preferably, the bottom of described LED support 2, which is inverted T shaped or mushroom-head, mutually detains flush mounting 6, glue material and gold
Category piece mutually links closely, and mutually insertion is not limited to inverted T shaped or mushroom-head shape for the two.
Preferably, described base material 1 by vacuum sputtering technique in lower surface plating filmed metals silver layer b, upper surface is under
To upper plating filmed metals silver layer c and aluminum oxide d and titanium oxide layer e (this is not limited to, while other metals or oxide can be added and protected
Sheath).
Preferably, described base material 1 by vacuum sputtering technique in lower surface plating filmed metals silver layer b, upper surface is under
To upper plating filmed metals silver layer c and titanium oxide layer d and silicon oxide layer e and titanium oxide f (this is not limited to, while other gold can be added
Category or protective oxide film).
Beneficial effects of the present invention：Substrate body is chosen flexibly, can be chosen according to product performance demands, copper, aluminium, the gold such as iron
Category.Handled by vacuum sputtering technique or some special process, turmeric category and metal oxide in face face, protecting base material
Do not cure, bromination, oxidation etc., improve substrate reflectivity and glossiness.Pass through control surface titanium oxide, aluminum oxide (silica)
And silver thickness, it may be implemented in special LED support substrate surface routing, positive and negative scolding tin function.Special LED support processing and forming
Technique is various.
Brief description of the drawings：
For ease of explanation, the present invention is described in detail by following specific implementations and accompanying drawing.
Fig. 1 is schematic structural view of the invention；
Fig. 2-1,2-2 are the structural representation of base material in the present invention；
Fig. 3 is the structural representation of LED support in the present invention；
Fig. 4 is Fig. 3 left view structural representation；
Fig. 5 is the structural representation of LED semi-finished product in the present invention.
Embodiment：
As Figure 1-5, present embodiment uses following technical scheme：It includes base material 1, support filling glue material a, LED
Support 2, fluorescent glue 3, chip 4, gold thread 5 and inverted T shaped or mushroom-head mutually detain flush mounting 6, and base material 1 and glue material a pass through certain
Technological forming LED support 2, the bottom of a cup of support 2 are provided with chip 4, gold thread 5, flip LED chips are welded with packed LED chip 4
4 weld with the bottom of a cup of support 2, and the top of chip 4 and gold thread 5 is packaged with fluorescent glue 3.
Preferably, the bottom of described LED support 2, which is inverted T shaped or mushroom-head, mutually detains flush mounting 6, glue material and gold
Category piece mutually links closely, and mutually insertion is not limited to inverted T shaped or mushroom-head shape for the two.
Preferably, described base material 1 by vacuum sputtering technique in lower surface plating filmed metals silver layer b, upper surface is under
To upper plating filmed metals silver layer c and alumina layer d and titanium oxide layer e (this is not limited to, while other metals or oxide can be added
Protective layer).
Preferably, described base material 1 by vacuum sputtering technique in lower surface plating filmed metals silver layer b, upper surface is under
To upper plating filmed metals silver layer c and titanium oxide layer d and silicon oxide layer e and titanium oxide f (this is not limited to, while other gold can be added
Category or protective oxide film).
The preparation method that the base material of the present invention chooses the LED light source of flexible new structure is：Step 1：At substrate process
Reason：By vacuum sputtering technique base material 1 lower surface plating filmed metals silver layer b, upper surface from top to bottom plating filmed metals silver layer c and
Alumina layer d and titanium oxide layer e or upper surface plating filmed metals silver layer c and titanium oxide layer d and silicon oxide layer e and oxygen from top to bottom
Change titanium f.Step 2：LED support makes：Corresponding construction LED support 2, and LED support 2 are filled with thermosetting or thermoplastic shaping mode
Middle part is provided with inverted T shaped or mushroom-head and mutually detains flush mounting device 6, step 3：Led packaging technologies：Lead on LED support 2
Cross the LED semi-finished product that shaping is made in the techniques such as carry out dispensing, chip 4, weldering gold thread 5；Step 4：By allocating fluorescent glue ratio
Example, fluorescent adhesive layer 3 is potted on LED semi-finished product, and is carried out baking-curing shaping and made required LED light source lamp bead.
The general principle and principal character and advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the simply explanation described in above-described embodiment and specification is originally
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (1)
- A kind of 1. preparation method that base material chooses the LED light source of flexible new structure, it is characterised in that：Described LED light source Include base material (1), support filling glue material (a), LED support (2), fluorescent glue (3), chip (4), gold thread (5) and inverted T shaped or mushroom Mushroom head dummy mutually detains flush mounting (6), base material (1) and glue material (a) and passes through certain technological forming LED support (2), the cup of support (2) Bottom is provided with chip (4), and gold thread (5) is welded with packed LED chip (4), and flip LED chips (4) weld with support (2) bottom of a cup Connect, fluorescent glue (3) is packaged with above chip (4) and gold thread (5), the bottom of described LED support (2) is inverted T shaped or mushroom Head dummy mutually detains flush mounting 6, and glue material and sheet metal mutually link closely, and mutually insertion is not limited to inverted T shaped or mushroom-head shape, institute for the two The preparation method for the LED light source stated is：Step 1：Substrate process processing：By vacuum sputtering technique in the lower surface of base material (1) Plating filmed metals silver layer (b), upper surface plating filmed metals silver layer (c) and alumina layer (d) and titanium oxide layer (e) or plating from top to bottom Film metallic silver layer c and titanium oxide layer d and silicon oxide layer e and titanium oxide f；Step 2：LED support makes：With thermosetting or thermoplastic into Type mode fills corresponding construction LED support (2), and is provided with empty avoiding device (6), step 3 in the middle part of LED support (2)：Led is encapsulated Technique：By carrying out dispensing on LED support (2), chip (4), the technique such as weldering gold thread (5) be made the LED half of shaping into Product；Step 4：By allocating fluorescent glue ratio, fluorescent adhesive layer (3) is potted on LED semi-finished product, and carry out baking-curing Required LED light source lamp bead is made in shaping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610825634.XA CN107845718A (en) | 2016-09-18 | 2016-09-18 | The preparation method that a kind of base material chooses the LED light source of flexible new structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610825634.XA CN107845718A (en) | 2016-09-18 | 2016-09-18 | The preparation method that a kind of base material chooses the LED light source of flexible new structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107845718A true CN107845718A (en) | 2018-03-27 |
Family
ID=61656486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610825634.XA Pending CN107845718A (en) | 2016-09-18 | 2016-09-18 | The preparation method that a kind of base material chooses the LED light source of flexible new structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107845718A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373522A (en) * | 2001-03-05 | 2002-10-09 | 全新光电科技股份有限公司 | LED with substrate coated with metallic reflection film and its preparing process |
| CN204045622U (en) * | 2014-08-25 | 2014-12-24 | 深圳市天电光电科技有限公司 | LED packaging |
| CN104600172A (en) * | 2014-09-10 | 2015-05-06 | 广东长盈精密技术有限公司 | Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof |
-
2016
- 2016-09-18 CN CN201610825634.XA patent/CN107845718A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373522A (en) * | 2001-03-05 | 2002-10-09 | 全新光电科技股份有限公司 | LED with substrate coated with metallic reflection film and its preparing process |
| CN204045622U (en) * | 2014-08-25 | 2014-12-24 | 深圳市天电光电科技有限公司 | LED packaging |
| CN104600172A (en) * | 2014-09-10 | 2015-05-06 | 广东长盈精密技术有限公司 | Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180327 |
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| RJ01 | Rejection of invention patent application after publication |