CN107833950A - A kind of LED encapsulation method - Google Patents

A kind of LED encapsulation method Download PDF

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Publication number
CN107833950A
CN107833950A CN201711214991.3A CN201711214991A CN107833950A CN 107833950 A CN107833950 A CN 107833950A CN 201711214991 A CN201711214991 A CN 201711214991A CN 107833950 A CN107833950 A CN 107833950A
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China
Prior art keywords
encapsulated layer
lens jacket
lens
layer
led
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CN201711214991.3A
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Chinese (zh)
Inventor
尹晓雪
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Xian Cresun Innovation Technology Co Ltd
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Xian Cresun Innovation Technology Co Ltd
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Priority to CN201711214991.3A priority Critical patent/CN107833950A/en
Publication of CN107833950A publication Critical patent/CN107833950A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Abstract

The present invention relates to a kind of LED encapsulation method, including, prepare heat-radiating substrate (21)；Prepare LED chip；The first lens jacket (22) is formed in the upper surface of the LED chip；The first encapsulated layer (23) is formed above the LED chip upper surface and first lens jacket (22)；The second lens jacket (24) is formed above first encapsulated layer (23)；The second encapsulated layer (25) is formed above second lens jacket (24), and second encapsulated layer (25) contains the fluorescent material；By include first lens jacket (22), first encapsulated layer (23), second lens jacket (24) and second encapsulated layer (25) LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.The embodiment of the present invention is by forming multilayer hemispherical lens so that light beam is more concentrated and irradiated uniformly, improves efficiency of light extraction, and avoids increase extra lens, reduces production cost.

Description

A kind of LED encapsulation method
Technical field
The invention belongs to photoelectric device technical field, and in particular to a kind of LED encapsulation method.
Background technology
Last century Mo, using GaN base material as representative Group III-V compound semiconductor blue chip field breakthrough, Bring an illumination revolution, the mark of this revolution be with large-power light-emitting diodes (Light-Emitting Diode, LED it is) semiconductor illumination technique (Solid State Lighting, SSL) of light source.
Now, LED produces white light by the way of GaN base blue chip adds yellow fluorescent powder more, to realize illumination, but This mode has following problem.
Firstly, since the light that LED light source is sent typically is distributed in divergence expression, i.e. lambertian distribution, this causes light source illumination bright Degree is not enough concentrated, and is generally required and is carried out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion, which increase Production cost.Secondly, fluorescent material is usually and is directly coated with the chip surface, and because the light scattering characteristic of fluorescent material causes Significant component of forward entrance light can be by back scattering, and therefore, chip has absorption for the light of back scattering, So this mode being directly coated with will reduce the efficiency of light extraction of encapsulation.In addition, high temperature caused by chip can make fluorescent material Quantum efficiency is remarkably decreased, so as to seriously affect the luminous efficiency of encapsulation.Again, when LED chip works, big calorimetric can be produced Amount, if temperature is too high, light intensity reductions, spectral shift can be caused, colour temperature raises, thermal stress increases, chip accelerated ageing etc. one Series of problems, greatly reduce LED service life.
Therefore, develop a kind of efficiency of light extraction is high, the encapsulation technology of service life length have become it is urgently to be resolved hurrily at present Problem.
The content of the invention
For the problem present on, the present invention proposes a kind of new LED encapsulation method, and specific embodiment is such as Under.
Specifically, the embodiment of the present invention provides a kind of LED encapsulation method, wherein, including,
Step 1, prepare heat-radiating substrate 21；
Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate 21；
Step 3, the first lens jacket 22 is formed in the upper surface of the LED chip, first lens jacket 22 includes multiple First hemispherical lens；
Step 4, the first encapsulated layer 23 is formed above the LED chip upper surface and first lens jacket 22；
Step 5, the second lens jacket 24 is formed above first encapsulated layer 23, second lens jacket 24 includes multiple Second hemispherical lens, and multiple second hemispherical lens contain fluorescent material；
Step 6, the second encapsulated layer 25 is formed above second lens jacket 24, and second encapsulated layer 25 is containing State fluorescent material；
Step 7, first lens jacket 22, first encapsulated layer 23, second lens jacket 24 and institute will be included State the second encapsulated layer 25 LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
In one embodiment of the invention, step 3 includes：
Step 31, the LED chip surface apply the first layer of silica gel, using the first hemispherical in the LED core Multiple semispherical silicon glueballs are formed above piece；
Step 32, the first just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, it is saturating to form described first Mirror layer 22, described first just bakes temperature as 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, step 4 includes：
Step 41, the second layer of silica gel is coated above the LED chip upper surface and first lens jacket 22；
Step 42, the second just roasting and polishing is carried out to second layer of silica gel, it is described to form first encapsulated layer 23 Second just bakes temperature as 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, step 5 includes：
Step 51, first encapsulated layer 23 surface apply the 3rd layer of silica gel, using the second hemispherical in institute State the top of the first encapsulated layer 23 and form multiple semispherical silicon glueballs, the second semispherical silicon glueballs has included the fluorescent material；
Step 52, the 3rd just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, to form the second lens jacket 24, the described 3rd just bakes temperature as 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, step 6 includes：
Step 61, the 4th layer of silica gel is coated above second lens jacket 24 and first encapsulated layer 23；
Step 62, the upper surface of the 4th layer of silica gel is set using the 3rd hemispherical to form arc；
Step 63, the 4th just roasting, demoulding and polishing are carried out to the 4th layer of silica gel, to form the second encapsulated layer 25, the Four just bake temperature as 90-125 °, and the time is 15-60 minutes.
In one embodiment of the invention, also include before step 3：
Step X1, it is respectively provided for preparing the silica gel material of first lens jacket 22 and first encapsulated layer 23, So that the refractive index of first lens jacket 22 is more than the refractive index of first encapsulated layer 23；
Step X2, be respectively provided for preparing second lens jacket 24 and second encapsulated layer 25 containing described glimmering The silica gel material of light powder so that after light is through second lens jacket 24 and second encapsulated layer 25, send fluorescence Wave-length coverage is 570nm-620nm, and the refractive index of second lens jacket 24 is more than the refractive index of first encapsulated layer 23 With the refractive index of second encapsulated layer 25.
In one embodiment of the invention, step 1 includes：
Step 11, choose the heat-radiating substrate 21；
Step 12, the cleaning heat-radiating substrate 21；
Step 13, the heat-radiating substrate 21 dried.
In one embodiment of the invention, the LED chip is gallium nitride base blue light chip.
In one embodiment of the invention, multiple first hemispherical lens on first lens jacket 22 is straight Footpath is 10-200 microns, and multiple first hemispherical lens uniform intervals arrange, and spacing is 10-200 microns.
In one embodiment of the invention, multiple second hemispherical lens on second lens jacket 24 are in square Shape arranges or is staggered.
Beneficial effects of the present invention are：
1st, passing through and the first lens jacket and the second lens jacket are set so that illumination is more concentrated, and by the upper of the second encapsulated layer Surface is arranged to arc, carries out shaping to light beam, avoids increase extra lens, reduce production cost.
2nd, by setting fluorescent material in the second lens jacket and the second encapsulated layer, avoid and fluorescent material is applied directly to LED On chip, the quantum efficiency for solving the problems, such as caused fluorescent material under the high temperature conditions declines.
3rd, the characteristics of using variety classes silica gel with phosphor gel refractive index difference, the refractive index of the first encapsulated layer are less than the The refractive index of two encapsulated layers, the refractive index of the first lens jacket are more than the refractive index of the first encapsulated layer, the refractive index of the second lens jacket Both it had been more than the refractive index of the first encapsulated layer, and had been more than the refractive index of the second encapsulated layer again, this kind of set-up mode can avoid being totally reflected, The light that LED chip is sent more shines out through encapsulating material.
4th, by using different arrangement modes to hemispherical lens, it is ensured that the light of light source uniformly divides in concentration zones Cloth.
5th, for the embodiment of the present invention by setting double lens layer, lens can change the direction of propagation of light, can effectively press down Total reflection effect processed, be advantageous to more light and be transmitted into outside LED, improve LED luminous efficiency.
Brief description of the drawings
Fig. 1 is the flow chart of LED encapsulation method provided in an embodiment of the present invention；
Fig. 2 is the structural representation of the blue-light LED chip in LED encapsulation method provided in an embodiment of the present invention；
Fig. 3 is the detailed process schematic diagram one of LED encapsulation method provided in an embodiment of the present invention；
Fig. 4 is the detailed process schematic diagram two of LED encapsulation method provided in an embodiment of the present invention；
Fig. 5 is the detailed process schematic diagram three of LED encapsulation method provided in an embodiment of the present invention；
Fig. 6 is the structural representation of the LED encapsulation structure prepared using LED encapsulation method provided in an embodiment of the present invention；
Fig. 7 A, Fig. 7 B are the arrangement schematic diagram of multiple hemispherical lens provided in an embodiment of the present invention.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention Embodiment be described in detail.
Embodiment one
The embodiment of the present invention provides a kind of LED encapsulation method, wherein, including,
Step 1, prepare heat-radiating substrate 21；
Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate 21；
Step 3, the first lens jacket 22 is formed in the upper surface of the LED chip, first lens jacket 22 includes multiple First hemispherical lens；
Step 4, the first encapsulated layer 23 is formed above the LED chip upper surface and first lens jacket 22；
Step 5, the second lens jacket 24 is formed above first encapsulated layer 23, second lens jacket 24 includes multiple Second hemispherical lens, and multiple second hemispherical lens contain fluorescent material；
Step 6, the second encapsulated layer 25 is formed above second lens jacket 24, and second encapsulated layer 25 is containing State fluorescent material；
Step 7, first lens jacket 22, first encapsulated layer 23, second lens jacket 24 and institute will be included State the second encapsulated layer 25 LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
Further, step 3 includes：
Step 31, the LED chip surface apply the first layer of silica gel, using the first hemispherical in the LED core Multiple semispherical silicon glueballs are formed above piece；
Step 32, the first just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, it is saturating to form described first Mirror layer 22, described first just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Further, step 4 includes：
Step 41, the second layer of silica gel is coated above the LED chip upper surface and first lens jacket 22；
Step 42, the second just roasting and polishing is carried out to second layer of silica gel, it is described to form first encapsulated layer 23 Second just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Further, step 5 includes：
Step 51, first encapsulated layer 23 surface apply the 3rd layer of silica gel, using the second hemispherical in institute State the top of the first encapsulated layer 23 and form multiple semispherical silicon glueballs, the semispherical silicon glueballs has included the fluorescent material；
Step 52, the 3rd just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, to form the second lens jacket 24, the described 3rd just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Further, step 6 includes：
Step 61, the 4th layer of silica gel is coated above second lens jacket 24 and first encapsulated layer 23；
Step 62, the upper surface of the 4th layer of silica gel is set using the 3rd hemispherical to form arc；
Step 63, the 4th just roasting, demoulding and polishing are carried out to the 4th layer of silica gel, to form the second encapsulated layer 25, the Four just bake temperature as 90-125 °, and the time is 15-60 minutes.
Further, also include before step 3：
Step X1, it is respectively provided for preparing the silica gel material of first lens jacket 22 and first encapsulated layer 23, So that the refractive index of first lens jacket 22 is more than the refractive index of first encapsulated layer 23；
Step X2, be respectively provided for preparing second lens jacket 24 and second encapsulated layer 25 containing described glimmering The silica gel material of light powder so that after light is through second lens jacket 24 and second encapsulated layer 25, send fluorescence Wave-length coverage is 570nm-620nm, and the refractive index of second lens jacket 24 is more than the refractive index of first encapsulated layer 23 With the refractive index of second encapsulated layer 25.
Further, step 1 includes：
Step 11, choose the heat-radiating substrate 21；
Step 12, the cleaning heat-radiating substrate 21；
Step 13, the heat-radiating substrate 21 dried.
Further, the LED chip is gallium nitride base blue light chip.
Further, a diameter of 10-200 of multiple first hemispherical lens on first lens jacket 22 is micro- Rice, and multiple first hemispherical lens uniform intervals arrangements, spacing is 10-200 microns.
Further, the rectangular arrangement of multiple second hemispherical lens on second lens jacket 24 or staggeredly Arrangement.
Beneficial effects of the present invention are：
1st, passing through and the first lens jacket and the second lens jacket are set so that illumination is more concentrated, and by the upper of the second encapsulated layer Surface is arranged to arc, carries out shaping to light beam, avoids increase extra lens, reduce production cost.
2nd, by setting fluorescent material in the second lens jacket and the second encapsulated layer, avoid and fluorescent material is applied directly to LED On chip, the quantum efficiency for solving the problems, such as caused fluorescent material under the high temperature conditions declines.
3rd, the characteristics of using variety classes silica gel with phosphor gel refractive index difference, the refractive index of the first encapsulated layer are less than the The refractive index of two encapsulated layers, the refractive index of the first lens jacket are more than the refractive index of the first encapsulated layer, the refractive index of the second lens jacket Both it had been more than the refractive index of the first encapsulated layer, and had been more than the refractive index of the second encapsulated layer again, this kind of set-up mode can avoid being totally reflected, The light that LED chip is sent more shines out through encapsulating material.
4th, by using different arrangement modes to hemispherical lens, it is ensured that the light of light source uniformly divides in concentration zones Cloth.
5th, for the embodiment of the present invention by setting double lens layer, lens can change the direction of propagation of light, can effectively press down Total reflection effect processed, be advantageous to more light and be transmitted into outside LED, improve LED luminous efficiency.
Embodiment two
Fig. 1 is refer to, Fig. 1 is the flow chart of LED encapsulation method provided in an embodiment of the present invention；Wherein, in above-mentioned implementation On the basis of example, LED encapsulation method provided in an embodiment of the present invention is described in detail in more detail, specific steps are such as Under：
Step 1, prepare heat-radiating substrate 21；
Step 11, choose the heat-radiating substrate 21；
Specifically, it be 0.5~10mm to choose thickness, material for solid copper coin heat-radiating substrate 21, and by heat-radiating substrate 21 Cut into required size；
Step 12, the cleaning heat-radiating substrate 21；
Specifically, the spot on heat-radiating substrate 21, especially oil stain are cleaned up；
Step 13, the heat-radiating substrate 21 dried；
Specifically, the heat-radiating substrate 21 that baking cleaning is completed, the drying of holding heat-radiating substrate 21；
Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate 21；
Specifically, the LED chip is gallium nitride base blue light chip, the cathode leg of chip and anode tap are welded on On heat-radiating substrate, bonding wire is checked after the completion of welding, if qualified, into lower step process, if unqualified, re-started Welding.
As shown in Fig. 2 Fig. 2 is the structural representation of the blue-light LED chip in LED encapsulation method provided in an embodiment of the present invention Figure；Its middle level 1 is backing material, and layer 2 is GaN cushions, and layer 3 is N-type GaN layer, and layer 4 and layer 6 are p-type GaN SQWs broadband Gap material, layer 5 are INGaN luminescent layers, and layer 7 is AlGaN barrier materials, and layer 8 is p-type GaN layer, the gallium nitride base blue light chip Thickness between 90 microns -140 microns, it is necessary to which explanation, the LED chip can also be other any optional classes Type, the embodiment of the present invention are not restricted to this.
As shown in figure 3, Fig. 3 is the detailed process schematic diagram one of LED encapsulation method provided in an embodiment of the present invention；In step Before 3, in addition to：
Step X1, it is respectively provided for preparing the silica gel material of first lens jacket 22 and first encapsulated layer 23；
Specifically, for preparing the silica gel material of the first lens jacket 22 and the first encapsulated layer 23 and differing, and silica gel material After material solidification, the refractive index of first lens jacket 22 is more than the refractive index of first encapsulated layer 23；
Step X2, be respectively provided for preparing second lens jacket 24 and second encapsulated layer 25 containing described glimmering The silica gel material of light powder so that after light is through second lens jacket 24 and second encapsulated layer 25, send fluorescence Wave-length coverage is 570nm-620nm, and the refractive index of second lens jacket 24 is more than the refractive index of first encapsulated layer 23 With the refractive index of second encapsulated layer 25.
Specifically, the LED chip based on the application is gallium nitride base blue light chip, therefore above-mentioned fluorescent material is yellow fluorescence Powder, yellow fluorescent powder is entered respectively with the silica gel for preparing the silica gel needed for the second lens jacket 24 and preparing needed for the second encapsulated layer 25 Row mixing, color measurement is carried out to mixed silica gel material so that the illumination of GaN base blue chip is mapped to that to be mixed with yellow glimmering After on the silica gel of light powder, the wave-length coverage of the fluorescence sent is 570nm-620nm；In the embodiment of the present invention, yellow fluorescent powder can Using (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2:Eu、M-α-SiAlON:The materials such as Eu；This Outside, in the present embodiment, the characteristics of using variety classes silica gel with phosphor gel refractive index difference, according to allotment ratio difference, The refractive index for being used to prepare the silica gel material of the second lens jacket 24 being configured to is more than the silica gel for being used for preparing the second encapsulated layer 25 The refractive index of material.
Step 3, the first lens jacket 22 is formed in the upper surface of the LED chip, first lens jacket 22 includes multiple First hemispherical lens；As shown in figure 3, specifically include following content：
Step 31, the LED chip surface apply the first layer of silica gel, using the first hemispherical in the LED core Multiple semispherical silicon glueballs are formed above piece；
Step 32, the first just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, it is saturating to form described first Mirror layer 22, described first just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Specifically, yellow fluorescent powder is not contained in the first lens jacket 22, and because the first lens jacket 22 is directly arranged at LED chip upper surface, during work, LED chip can discharge amount of heat, therefore the silica gel material for preparing the first lens jacket 22 is High temperature resistant silica gel.
It should be noted that having spacing A between multiple hemispherical lens in the embodiment of the present invention, the spacing is smaller more Good, specifically, in the embodiment of the present invention, a diameter of 10-200 of multiple first hemispherical lens on the first lens jacket 22 is micro- Rice, and multiple hemispherical lens are spaced, spacing is 10-200 microns.
In the embodiment of the present invention, appropriate restriction is also carried out to the arrangement mode of multiple first hemispherical lens, such as Fig. 7 A It is shown, multiple rectangular arrangements of first hemispherical lens on the first lens jacket 22, or as shown in Figure 7 B, multiple first hemisphere Shape lens are staggered.
Step 4, the first encapsulated layer 23 is formed above the LED chip upper surface and first lens jacket 22；Such as Fig. 3 It is shown, specifically include following content：
Step 41, the second layer of silica gel is coated above the LED chip upper surface and first lens jacket 22；
Step 42, the second just roasting and polishing is carried out to second layer of silica gel, it is described to form first encapsulated layer 23 Second just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Specifically, there is spacing between multiple first hemispherical lens on the first lens jacket 22, and not by LED The surface of chip is completely covered, when the first lens jacket 22 set the first encapsulated layer 23 when, silica gel material will also can will it is multiple partly Space between sphere lenses is filled up, thus, the upper surface of the part of the first encapsulated layer 23 and LED chip, for preparing the The silica gel material of one encapsulated layer 23 is high temperature resistant silica gel, and does not contain yellow fluorescent powder.
It should be noted that top surface of the upper surface of the first encapsulated layer 23 to multiple hemispherical lens of the first lens jacket 22 Distance be L.
As shown in figure 4, Fig. 4 is the detailed process schematic diagram two of LED encapsulation method provided in an embodiment of the present invention；Step 5, The second lens jacket 24 is formed above first encapsulated layer 23, it is saturating that second lens jacket 24 includes multiple second hemisphericals Mirror, and multiple second hemispherical lens contain fluorescent material；It specifically includes following content：
Step 51, first encapsulated layer 23 surface apply the 3rd layer of silica gel, using the second hemispherical in institute State the top of the first encapsulated layer 23 and form multiple semispherical silicon glueballs, the semispherical silicon glueballs has included the fluorescent material；
Step 52, the 3rd just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, to form the second lens jacket 24, the described 3rd just bakes temperature as 90-125 °, and the time is 15-60 minutes.
Specifically, the second lens jacket 24 is arranged at the upper surface of the first encapsulated layer 23, it is necessary to which explanation, the present invention are implemented In example, the upper surface of the first encapsulated layer 23 is plane, when the second lens jacket 24 is so set, easy to operation, the opposing party of one side Face make it that the light transmittance of multiple second hemispherical lens on the second lens jacket 24 is more uniform so that condenser performance is more preferable.
Furthermore, it is necessary to illustrate, the hemispherical diameter and first of multiple second hemispherical lens on the second lens jacket 24 The hemispherical diameter of the first hemispherical lens on lens jacket 22 is identical, and multiple second hemispherical lens on the second lens jacket 24 Between spacing A it is the smaller the better, its scope spacing is 10-200 microns.
The arrangement mode of multiple second hemispherical lens on second lens jacket 24 be able to can also both be handed over rectangular arrangement Mistake arrangement, the present embodiment are not restricted to this.
Specifically, in the embodiment of the present invention, the first lens jacket 22 uses rectangular arranged, and the second lens jacket 24 uses staggered row Row, or mutually exchange, to realize the staggered effect of hemispherical lens of the first lens jacket 22 and the second lens jacket 24, hand over Mistake arrangement can gather the light between adjacent lens, produce focussing force.
And when the first lens jacket 22 is consistent with the arrangement mode of the hemispherical lens of the second lens jacket 24, can be to LED Rambling light carries out shaping caused by chip, gathers light.
As shown in figure 5, Fig. 5 is the detailed process schematic diagram three of LED encapsulation method provided in an embodiment of the present invention；Step 6, The second encapsulated layer 25 is formed above second lens jacket 24, and second encapsulated layer 25 contains the fluorescent material；It has Body includes following content：
Step 61, the 4th layer of silica gel is coated above second lens jacket 24 and first encapsulated layer 23；
Step 62, the upper surface of the 4th layer of silica gel is set using the 3rd hemispherical to form arc；
Step 63, the 4th just roasting, demoulding and polishing are carried out to the 4th layer of silica gel, to form the second encapsulated layer 25, the Four just bake temperature as 90-125 °, and the time is 15-60 minutes.
Specifically, the upper surface of the second encapsulated layer 25 is arranged to arc, the arc is specifically as follows hemispherical, parabola Type or pancake, wherein hemispherical beam angle are maximum, are suitable for general lighting application；Parabola beam angle is minimum, is suitable for Local lighting application；And pancake falls between, it is suitable for guidance lighting.Therefore, can be selected according to products application place Specific shape is selected, to reach best using effect.The upper surface of such second encapsulated layer 25 forms big lens, can to from Gallium nitride base blue light chip irradiates the light come and carries out shaping, and to solve the problems, such as that illumination diverging is not concentrated, therefore the present invention is real Apply LED encapsulation structure prepared by the LED encapsulation method of example offer, it is not necessary to shaping can be carried out to light beam by increasing outer lens, Reduce production cost.
It should be noted that in the embodiment of the present invention, multiple first hemispherical lens and multiple second hemispherical lens Material can be mixed by polycarbonate, polymethyl methacrylate and glass, and the refractive index of hemispherical lens can root It is adjusted according to the difference of each composition；
And the material of the second encapsulated layer 25 can be methyl silicone rubber and phenyl high index of refraction organic silicon rubber mixes, The refractive index of second encapsulated layer 25 is more than the refractive index of the first encapsulated layer 23, and in the embodiment of the present invention, the refractive index of encapsulated layer The set-up mode increased successively from bottom to top, it can preferably suppress total reflection phenomenon, and the refractive index of the second encapsulated layer 25 It is the smaller the better, to avoid forming larger refringence between the second encapsulated layer 25 and outside air, cause to be totally reflected, by this Kind of set-up mode, to make illumination maximumlly shine out, total reflection is avoided to cause light to be packaged structure absorption and be changed into heat, Improve efficiency of light extraction.
Step 7, first lens jacket 22, first encapsulated layer 23, second lens jacket 24 and institute will be included State the second encapsulated layer 25 LED encapsulation structure grow it is roasting, to complete the encapsulation of the LED.
Specifically, solidify in the first lens jacket 22, the first encapsulated layer 23, the second lens jacket 24 and the second encapsulated layer 25 Afterwards, it is necessary to grow roasting, to eliminate the internal stress of LED encapsulation structure, long roasting baking temperature is 100~150 DEG C, during baking Between be 4~12h.
It should be noted that in the embodiment of the present invention, multiple first hemispherical lens are included on the first lens jacket 22, those First hemispherical lens is " planoconvex lens ", its focal length f=R/ (n2-n1), wherein, n2 is the refractive index and of the first lens jacket 22 The refractive index of two lens jackets 24 is averaged, and n1 is the average value for taking second lens jacket refractive index of two layers of encapsulated layer about 24 (refractive index of the first encapsulated layer 23 is less than the second encapsulated layer 25, but the refractive index value more phase of the two in the embodiment of the present invention Approximation, refringence are little), R is the radius of the first hemispherical lens.
In order to gather state when ensureing that light reaches the second lens jacket 24 after the outgoing of the first lens jacket 22, the present invention is implemented In example, the distance between the first lens jacket 22 and the second lens jacket 24 L height should be within 2 times of focal lengths, namely L scope No more than 2R/ (n2-n1).
In addition, in the embodiment of the present invention, the thickness of the second encapsulated layer 25 is thicker, the top surface of the second lens jacket 24 to the second envelope The upper surface of layer 25 is filled typically between 50-500 microns.
LED encapsulation after the completion of being prepared according to the above method is as shown in fig. 6, Fig. 6 is using provided in an embodiment of the present invention The structural representation of LED encapsulation structure prepared by LED encapsulation method；Specifically, heat-radiating substrate 21 is solid copper substrate, radiating The thickness D of substrate 21 is between 0.5-10mm, and the width W of heat-radiating substrate 21 is cut according to the size of LED chip, herein It is not limited, copper heat-radiating substrate thermal capacitance is big, and thermal conductivity is good, and is not easy temperature distortion so as to the thermal diffusivity of LED chip more It is good.First lens jacket 22, the radius of each hemispherical lens are R, and the spacing of two neighboring hemispherical lens is A, adjacent two Connected between individual hemispherical lens by silica gel strip, the top surface of the first hemispherical lens to the bottom surface of the second hemispherical lens away from From for L, for its specific scope between 0-2R/ (n2-n1), the second lens jacket 24 is arranged at the top of the first encapsulated layer 23, and The radius of multiple hemispherical lens on two lens jackets 24 is also R, and multiple second hemispherical lens on the second lens jacket 24 Upper surface to the upper surface of the second encapsulated layer 25 distance in 50-500 microns, the embodiment of the present invention, the second encapsulated layer 25 upper surface is arc, forms a larger lens, and to carry out secondary reshaping to light beam, and it is outside thoroughly to avoid increase Mirror, therefore reduce production cost.
After completing encapsulation, the embodiment of the present invention typically also includes test, the LED that go-no-go encapsulation is completed and to Package Testing Qualified LED encapsulation structure, in order to carry out subsequent applications.
In summary, specific case used herein is to a kind of reality of LED encapsulation method provided in an embodiment of the present invention The mode of applying is set forth, and the explanation of above example is only intended to help the method and its core concept for understanding the present invention；Together When, for those of ordinary skill in the art, according to the thought of the present invention, have in specific embodiments and applications Change part, in summary, this specification content should not be construed as limiting the invention, and protection scope of the present invention should be with institute Attached claim is defined.

Claims (10)

  1. A kind of 1. LED encapsulation method, it is characterised in that including,
    Step 1, prepare heat-radiating substrate (21)；
    Step 2, prepare LED chip, and the LED chip is fixed on the heat-radiating substrate (21)；
    Step 3, the first lens jacket (22) is formed in the upper surface of the LED chip, first lens jacket (22) includes multiple First hemispherical lens；
    Step 4, the first encapsulated layer (23) is formed above the LED chip upper surface and first lens jacket (22)；
    Step 5, the second lens jacket (24) is formed above first encapsulated layer (23), second lens jacket (24) includes more Individual second hemispherical lens, and multiple second hemispherical lens contain fluorescent material；
    Step 6, the second encapsulated layer (25) is formed above second lens jacket (24), and second encapsulated layer (25) contains The fluorescent material；
    Step 7, will include first lens jacket (22), first encapsulated layer (23), second lens jacket (24) and The LED encapsulation structure of second encapsulated layer (25) grow it is roasting, to complete the encapsulation of the LED.
  2. 2. LED encapsulation method according to claim 1, it is characterised in that step 3 includes：
    Step 31, the LED chip surface apply the first layer of silica gel, using the first hemispherical in the LED chip It is square into multiple semispherical silicon glueballs；
    Step 32, the first just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, to form first lens jacket (22), described first temperature is just baked as 90-125 °, the time is 15-60 minutes.
  3. 3. LED encapsulation method according to claim 2, it is characterised in that step 4 includes：
    Step 41, the second layer of silica gel of coating above the LED chip upper surface and first lens jacket (22)；
    Step 42, the second just roasting and polishing is carried out to second layer of silica gel, to form first encapsulated layer (23), described the Two just bake temperature as 90-125 °, and the time is 15-60 minutes.
  4. 4. LED encapsulation method according to claim 3, it is characterised in that step 5 includes：
    Step 51, first encapsulated layer (23) surface apply the 3rd layer of silica gel, using the second hemispherical described Multiple semispherical silicon glueballs are formed above first encapsulated layer (23), the semispherical silicon glueballs has included the fluorescent material；
    Step 52, the 3rd just roasting, demoulding and polishing are carried out to the multiple semispherical silicon glueballs, to form the second lens jacket (24), the described 3rd temperature is just baked as 90-125 °, the time is 15-60 minutes.
  5. 5. LED encapsulation method according to claim 4, it is characterised in that step 6 includes：
    Step 61, the 4th layer of silica gel of coating above second lens jacket (24) and first encapsulated layer (23)；
    Step 62, the upper surface of the 4th layer of silica gel is set using the 3rd hemispherical to form arc；
    Step 63, the 4th just roasting, demoulding and polishing are carried out to the 4th layer of silica gel, to form the second encapsulated layer (25), the 4th Just roasting temperature is 90-125 °, and the time is 15-60 minutes.
  6. 6. LED encapsulation method according to claim 1, it is characterised in that also include before step 3：
    Step X1, it is respectively provided for preparing the silica gel material of first lens jacket (22) and first encapsulated layer (23), So that the refractive index of first lens jacket (22) is more than the refractive index of first encapsulated layer (23)；
    Step X2, be respectively provided for preparing second lens jacket (24) and second encapsulated layer (25) containing described glimmering The silica gel material of light powder so that after light is through second lens jacket (24) and second encapsulated layer (25), send glimmering The wave-length coverage of light is 570nm-620nm, and the refractive index of second lens jacket (24) is more than first encapsulated layer (23) Refractive index and second encapsulated layer (25) refractive index.
  7. 7. LED encapsulation method according to claim 1, it is characterised in that step 1 includes：
    Step 11, choose the heat-radiating substrate (21)；
    Step 12, the cleaning heat-radiating substrate (21)；
    Step 13, by the heat-radiating substrate (21) dry.
  8. 8. LED encapsulation method according to claim 1, it is characterised in that the LED chip is gallium nitride base blue light core Piece.
  9. 9. LED encapsulation method according to claim 1, it is characterised in that multiple institutes on first lens jacket (22) State a diameter of 10-200 microns of the first hemispherical lens, and multiple first hemispherical lens uniform intervals arrangements, spacing For 10-200 microns.
  10. 10. LED encapsulation method according to claim 1, it is characterised in that multiple institutes on second lens jacket (24) State the rectangular arrangement of the second hemispherical lens or be staggered.
CN201711214991.3A 2017-11-28 2017-11-28 A kind of LED encapsulation method Pending CN107833950A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102422081A (en) * 2009-05-12 2012-04-18 飞利浦拉米尔德斯照明设备有限责任公司 Led lamp producing sparkle
CN103681991A (en) * 2013-12-20 2014-03-26 纳晶科技股份有限公司 Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof
US8846424B2 (en) * 2010-03-25 2014-09-30 Micron Technology, Inc. Multi-lens solid state lighting devices
WO2016150837A1 (en) * 2015-03-20 2016-09-29 Osram Opto Semiconductors Gmbh Optoelectronic lighting device and method for the production of an optoelectronic lighting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102422081A (en) * 2009-05-12 2012-04-18 飞利浦拉米尔德斯照明设备有限责任公司 Led lamp producing sparkle
US8846424B2 (en) * 2010-03-25 2014-09-30 Micron Technology, Inc. Multi-lens solid state lighting devices
CN103681991A (en) * 2013-12-20 2014-03-26 纳晶科技股份有限公司 Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof
WO2016150837A1 (en) * 2015-03-20 2016-09-29 Osram Opto Semiconductors Gmbh Optoelectronic lighting device and method for the production of an optoelectronic lighting device

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