CN107818218A - A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location - Google Patents
A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location Download PDFInfo
- Publication number
- CN107818218A CN107818218A CN201711041567.3A CN201711041567A CN107818218A CN 107818218 A CN107818218 A CN 107818218A CN 201711041567 A CN201711041567 A CN 201711041567A CN 107818218 A CN107818218 A CN 107818218A
- Authority
- CN
- China
- Prior art keywords
- mosfet
- electromagnetic
- marx
- electromagnetic pulse
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 claims abstract description 36
- 230000001052 transient effect Effects 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 11
- 238000013499 data model Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
Abstract
The invention discloses a kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location, to produce transient electromagnetic pulse signal, belongs to electromagnetism direct fault location field.The invention mainly comprises dc source, signal generator, Marx generators, MOSFET drive circuits and electromagnetic probe.Dc source is respectively Marx generators and MOSFET drive circuitries, and signal generator provides pulse signal for MOSFET drive circuits, controls MOSFET turn-on and turn-off, and then produces pulsewidth on electromagnetic probe, the transient electromagnetic pulse that frequency is setting value.Apparatus of the present invention can produce that amplitude is adjustable, the voltage pulse signal of pulse width variability (200 2000ns) at load end electromagnetic probe both ends, so produce on electromagnetic probe pulsewidth, frequency for the varying strength of setting value transient electromagnetic pulse.The electromagnetic pulse generator design principle of the present invention is simple, and manufacturing cost is low, and circuit stability is good.
Description
Technical field
The present invention relates to electromagnetic pulse direct fault location field, more particularly to a kind of nanosecond electricity for electromagnetism direct fault location
Pulsactor.
Background technology
With the continuous diminution of CMOS technology characteristic size, the Electro Magnetic Compatibility of integrated circuit receives increasing pass
Note and research.Electromagnetism direct fault location (EMFI) refers to using local high-intensity magnetic field attack chip caused by electromagnetic probe, so as to cause
Chip internal produces the inductive voltage and current of transient state, to introducing failure by attack chip.Electromagnetism direct fault location is as a kind of new
The attack method of type, the part of chip can be attacked and obtain its confidential information using cryptanalysis technology, it is extensive
Using.To research and develop effective safeguard procedures, it is necessary to study failure mechanism of the electromagnetic pulse direct fault location to IC chip.Cause
This, the electromagnetic pulse generator for developing a Parameter adjustable just seems necessary.
Marx generators are widely used in electromagnetism direct fault location field because can produce high pressure conveniently by cascade.Mesh
Although caused pulse amplitude is higher, the rise time is shorter for preceding developed electromagnetic pulse generator, but control circuit it is complicated,
Experimental provision is bulky, and due to using spark gap etc. to be very limited as switch, its service life and frequency,
The regulation of amplitude and pulsewidth is also highly difficult.Due to switch mosfet device have compact, high repetition frequency, it is light, inexpensive and
The advantages that high efficiency, MOSFET drive circuits can be combined, produce the big pulse signal of current changing rate, circuit can be developed
It is simple in construction, cost is low, electromagnetic pulse output frequency and the adjustable nanosecond electromagnetic pulse generator of intensity.
The content of the invention
The invention aims to overcome deficiency of the prior art, there is provided a kind of nanosecond for electromagnetism direct fault location
Level electromagnetic pulse generator, it is imitative based on Hspice software for circuit using switching devices of the MOSFET as Marx generators
True analysis, the selection of circuit components and PCB design are instructed, realize the controllable adjustment of electromagnetic pulse output frequency and intensity.
The purpose of the present invention is achieved through the following technical solutions：
A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location, including dc source, signal generator,
Marx generators, MOSFET drive circuits and electromagnetic probe,
The dc source is connected respectively with the MOSFET drive circuits, Marx generators, is driven for the MOSFET
Circuit and the Marx generators provide power supply；
The MOSFET drive circuits are built-in with MOSFET driving chips, transient voltage suppressor diode (TVS), protection electricity
Hinder (R1) and raster data model resistance (Rg)；The input of the MOSFET driving chips connects with the output end of the signal generator
Connect, the output end of the MOSFET driving chips is connected with the raster data model resistance (Rg), and the transient voltage suppresses two poles
Pipe (TVS) is connected with the raster data model resistance (Rg), the protective resistance (R1) and the transient voltage suppressor diode
(TVS) it is in parallel；
The Marx generators include charging isolation resistance (RC) and one to the adjustable Marx circuits of level Four, described charging every
One end from resistance (RC) is connected with the output end of the dc source, the high pressure for Marx circuits isolate with dc source and
Charging current limiter；Two poles that the other end of the charging isolation resistance (RC) passes through wire and the first order circuit of the Marx circuits
The positive pole connection of pipe, every grade of Marx circuit are made up of switch mosfet, storage capacitor and diode；In the Marx electricity described in every grade
The negative pole of diode is connected by wire with the point in parallel of switch mosfet and storage capacitor in road；The Marx circuits pass through
Jumper cap is placed to change circuit structure in junctions at different levels on pcb board；The grid source electrode of switch mosfet respectively with it is described
The transient voltage suppressor diode (TVS) of MOSFET drive circuits is in parallel, to avoid switch mosfet grid source over-voltage from leading
Cause device failure；When switch mosfet is off state, diode current flow forms the charge current loop of storage capacitor, storage
Can electric capacity charged in parallel to the dc source setting magnitude of voltage；When switch mosfet is in the conduction state, diode is anti-
The discharge current loop of storage capacitor is formed to cut-off, fills with the storage capacitor to preset voltage value in a series arrangement to institute
State electromagnetic probe to be discharged, by controlling the ON time of switch mosfet to make electromagnetic probe both ends obtain corresponding pulses width
High-voltage nanosecond pulse square wave, realize on electromagnetic probe produce pulsewidth, frequency be setting value transient electromagnetic pulse；When
When switch mosfet backs off, storage capacitor is charged again.
Further, the electromagnetic probe includes three coil turn, copper wire diameter and ferrite magnetic core diameter parameters；It is logical
Cross the setting to three parameters and obtain different types of electromagnetic probe, to produce the electromagnetic pulse signal of varying strength.
Further, electromagnetic pulse intensity caused by the electromagnetic probe and the current changing rate on electromagnetic probe are into just
Than.
Compared with prior art, beneficial effect caused by technical scheme is：
1) present invention uses switching devices of the MOSFET as Marx generators so that the repetition frequency of electromagnetic pulse generator
Rate is high, service life length.
2) drive part of the invention in switch mosfet, passes through MOSFET driving chips and the raster data model of low-resistance value
Resistance Rg carries out fast charging and discharging to switch mosfet, to improve MOSFET switching speed, can be produced at electromagnetic probe both ends
Rising edge and trailing edge reach the other voltage pulse of nanosecond, and then generation pulsewidth, frequency are setting value on electromagnetic probe
Transient electromagnetic pulse.
3) present invention uses different types of electromagnetic probe, is easy to produce the electromagnetic pulse signal of different electromagnetism intensities.
4) simulation analysis of the invention based on Hspice softwares, instruct the selection of circuit components and the design of pcb board, are
The design that circuit occurs for electromagnetic pulse provides reference；Circuit job stability is high, realizes electromagnetic pulse amplitude, pulsewidth and frequency
Any regulation of rate, highest 2.9V induced voltage can be produced in the single turn receiving coil that 0.5mm distance on diameter is 1.5mm,
Laid a good foundation to carry out electromagnetism fault injection experiment.
Brief description of the drawings
Fig. 1 is the theory diagram of electromagnetic pulse generator.
Fig. 2 is the structural representation of MOSFET drive circuits.
Fig. 3 is the adjustable Marx generator circuits principle schematic of series.
Fig. 4 (a) and Fig. 4 (b) is the timing chart of electromagnetic probe both ends output respectively.
Embodiment
With reference to specific embodiment, the present invention is further detailed explanation.
As shown in figure 1, be the theory diagram of electromagnetic pulse generator, including：Dc source, signal generator, Marx hairs
Raw device, MOSFET drive circuits and electromagnetic probe.Dc source is respectively Marx generators and MOSFET drive circuitries, is believed
Number generator provides pulse signal for MOSFET drive circuits, controls the turn-on and turn-off of switch mosfet, and then visit in electromagnetism
Pulsewidth is produced on head, the transient electromagnetic pulse that frequency is setting value.
As shown in Fig. 2 it is the circuit design structure schematic diagram of the MOSFET drive circuits.Driving chip and MOSFET
Concatenation driving resistance Rg between grid, appropriate value, to reduce drive signal concussion amplitude；Simultaneously in MOSFET grid sources connected in parallel winks
State voltage suppression diode TVS and resistance R1, further to limit MOSFET grid source over-voltages.
As shown in figure 3, it is the circuit theory diagrams of the Marx generators.The present invention devises the adjustable n levels Marx of series
Generator circuit, every grade of circuit are made up of diode, switch mosfet and storage capacitor.N takes 1 in the present embodiment, in figure, D1~
D2n is diode, and C1~Cn is storage capacitor, and M1~Mn is switch mosfet, and VDD is dc source, and RC is current-limiting resistance,
Magnetic_Microprobe is the electromagnetic probe of load end.
MOSFET driving chips selected by the present invention are IXDN609PI, and selected transient voltage suppressor diode is
SMBJ16CA, selected diode are fast recovery diode DSEI60-06A, and selected switch mosfet is
IXFB100N50Q3。
It is comprised the following steps that：
(1) electromagnetic probe for attack is chosen
The present invention have selected cylindrical ferrite magnetic core to strengthen the magnetic conductivity of probe, and use a diameter of 0.1mm copper
Line devises 15 specific compact electromagnetic probes, and probe diameter is respectively 0.7mm, 1mm and 1.2mm, and the number of turn of coil is distinguished
For 1,3,5,7,9, to produce the electromagnetic pulses in different attack regions and different electromagnetism intensities；The electromagnetism that the present embodiment is selected
Probe diameter is 1.2mm, coil turn 7；
(2) be driving chip power supply and be storage capacitor charging
As shown in Fig. 2 dc source provides 18V supply voltage for MOSFET driving chips, the signal generator
Input signal of the start pulse signal as MOSFET driving chips, after driving chip, the amplitude of output pulse signal is
18V, the most fast rising and falling time of pulse is up to 20ns, to fast driving MOSFET turn-on and turn-off；
As shown in figure 3, in the charging stage, switch mosfet M1~Mn shut-offs, diode D1~D2n turns on to form charging electricity
Logical circulation road, dc source charge to direct current power source voltage by current limiting safeguard resistor RC and diode pair shunt capacitance C1~Cn
VDD；
(3) in MOSFET conducting phases to electric capacity discharged in series
As shown in figure 3, reversely ending in discharge regime, M1~Mn conductings, D1~D2n, electric capacity C1~Cn is in a series arrangement
Discharged, n level equivalent series capacitance voltages are added rapidly to load electromagnetic probe both ends, it is obtained n times of VDD voltage, use
To produce the electromagnetic pulse of transient state on electromagnetic probe；
(4) in producing transient electromagnetic pulse on electromagnetic probe
The present embodiment is shown in voltage pulse waveforms caused by electromagnetic probe both ends such as Fig. 4 (a), 4 (b)；During test, choosing
With one-level Marx generator circuits, DC power output voltage VDD is 0~50V, and current-limiting resistance RC is 1K Ω, resistance
Rg is 1 Ω, and the load resistance RL to be connected with electromagnetic probe is 20 Ω；Fig. 4 (a) is to be set according to the pulsewidth of the signal generator
It is fixed, respectively in the voltage pulse signal that load end output pulse width is 200ns, 1us and 2us；Fig. 4 (b) is VDD points of dc source
Not Shu Chu in the case of 24V, 38V and 50V voltage load end voltage pulse waveforms；
The present invention will test coil and oscillography using a diameter of 1.5mm single turn receiving coil by BNC coaxial wires
Device connects, to test the size of different electromagnetic probes caused induced electromotive force on receiving coil；Experiment measures, when making
With three-level Marx generator circuits, and electromagnetic probe fixed placement is when directly over receiving coil at 0.5mm, on receiving coil
The induced voltage measured is up to 2.9V, and chip to be attacked can be made to produce failure.
The present invention is not limited to embodiments described above.The description to embodiment is intended to describe and said above
Bright technical scheme, above-mentioned embodiment is only schematical, is not restricted.This is not being departed from
In the case of invention objective and scope of the claimed protection, one of ordinary skill in the art may be used also under the enlightenment of the present invention
The specific conversion of many forms is made, these are belonged within protection scope of the present invention.
Claims (3)
1. a kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location, it is characterised in that including dc source, signal
Generator, Marx generators, MOSFET drive circuits and electromagnetic probe,
The dc source is connected respectively with the MOSFET drive circuits, Marx generators, is the MOSFET drive circuits
Power supply is provided with the Marx generators；
The MOSFET drive circuits are built-in with MOSFET driving chips, transient voltage suppressor diode (TVS), protective resistance
And raster data model resistance (Rg) (R1)；The input of the MOSFET driving chips connects with the output end of the signal generator
Connect, the output end of the MOSFET driving chips is connected with the raster data model resistance (Rg), and the transient voltage suppresses two poles
Pipe (TVS) is connected with the raster data model resistance (Rg), the protective resistance (R1) and the transient voltage suppressor diode
(TVS) it is in parallel；
The Marx generators are electric to the adjustable Marx circuits of level Four, described charging isolation including charging isolation resistance (RC) and one
One end of resistance (RC) is connected with the output end of the dc source, and the high pressure for Marx circuits is isolated and charged with dc source
Current limliting；The other end of the charging isolation resistance (RC) passes through the diode of wire and the first order circuit of the Marx circuits
Positive pole is connected, and every grade of Marx circuit is made up of switch mosfet, storage capacitor and diode；In the Marx circuits described in every grade
The negative pole of diode is connected by wire with the point in parallel of switch mosfet and storage capacitor；The Marx circuits pass through in PCB
Jumper cap is placed to change circuit structure in junctions at different levels on plate；The grid source electrode of switch mosfet drives with the MOSFET respectively
The transient voltage suppressor diode (TVS) of dynamic circuit is in parallel, to avoid switch mosfet grid source over-voltage from causing device to damage
It is bad.
A kind of 2. nanosecond electromagnetic pulse generator for electromagnetism direct fault location according to claim 1, it is characterised in that
The electromagnetic probe includes three coil turn, copper wire diameter and ferrite magnetic core diameter parameters；By to three parameters
Setting obtain different types of electromagnetic probe, to produce the electromagnetic pulse signal of varying strength.
A kind of 3. nanosecond electromagnetic pulse generator for electromagnetism direct fault location according to claim 1, it is characterised in that
Electromagnetic pulse intensity is directly proportional to the current changing rate on electromagnetic probe caused by the electromagnetic probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711041567.3A CN107818218B (en) | 2017-10-31 | 2017-10-31 | Nanosecond electromagnetic pulse generator for electromagnetic fault injection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711041567.3A CN107818218B (en) | 2017-10-31 | 2017-10-31 | Nanosecond electromagnetic pulse generator for electromagnetic fault injection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107818218A true CN107818218A (en) | 2018-03-20 |
| CN107818218B CN107818218B (en) | 2023-11-21 |
Family
ID=61604406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711041567.3A Active CN107818218B (en) | 2017-10-31 | 2017-10-31 | Nanosecond electromagnetic pulse generator for electromagnetic fault injection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107818218B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109307829A (en) * | 2018-11-23 | 2019-02-05 | 西安交通大学 | With the detection device and its detection method of transient earth voltage shelf depreciation on site |
| CN109596953A (en) * | 2018-12-20 | 2019-04-09 | 国网北京市电力公司 | Electromagnetic wave launcher and instrument for measuring partial discharge's device |
| CN109660030A (en) * | 2018-11-23 | 2019-04-19 | 西安揽智俱应智能科技有限公司 | With the emitter and its launching technique of transient earth voltage shelf depreciation on site |
| CN109900988A (en) * | 2019-03-14 | 2019-06-18 | 合肥格威特电气技术有限公司 | A kind of two fingers number test gimulator of electromagnetic pulse electric current access |
| CN111313738A (en) * | 2018-12-12 | 2020-06-19 | 西门子医疗有限公司 | High-voltage generator and high-frequency generator for providing high-voltage pulses |
| CN112994658A (en) * | 2021-03-14 | 2021-06-18 | 国网内蒙古东部电力有限公司呼伦贝尔供电公司 | Marx generator-based pulse source with adjustable waveform |
| CN113381740A (en) * | 2021-03-19 | 2021-09-10 | 国网内蒙古东部电力有限公司呼伦贝尔供电公司 | Compact hybrid isolation Marx pulse generator for plasma discharge |
| CN114094988A (en) * | 2022-01-18 | 2022-02-25 | 杭州维纳安可医疗科技有限责任公司 | Pulse generating circuit, equipment and method with pulse detection function |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106151A1 (en) * | 2006-11-02 | 2008-05-08 | Korea Electro Technology Research Institute | Pulse power generator using semiconductor switch |
| CN103684360A (en) * | 2013-12-24 | 2014-03-26 | 国家电网公司 | Implementing method of high-voltage square-wave generator |
| CN203617979U (en) * | 2013-12-24 | 2014-05-28 | 国家电网公司 | High-voltage square-wave generator |
| WO2014193254A1 (en) * | 2013-05-28 | 2014-12-04 | Instituto Superior Tecnico | Modular generator for bipolar or unipolar pulses with correction of voltage decay integrated in power semiconductor modules |
| CN205105184U (en) * | 2015-11-24 | 2016-03-23 | 国家电网公司 | All solid state nanosecond pulser MOSFET drive circuit |
| CN105634441A (en) * | 2016-04-01 | 2016-06-01 | 中国人民解放军军械工程学院 | High-efficiency and double-exponential electromagnetic pulse generation device |
| CN107124163A (en) * | 2017-05-04 | 2017-09-01 | 重庆大学 | A kind of composite mode solid state pulse source |
-
2017
- 2017-10-31 CN CN201711041567.3A patent/CN107818218B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106151A1 (en) * | 2006-11-02 | 2008-05-08 | Korea Electro Technology Research Institute | Pulse power generator using semiconductor switch |
| WO2014193254A1 (en) * | 2013-05-28 | 2014-12-04 | Instituto Superior Tecnico | Modular generator for bipolar or unipolar pulses with correction of voltage decay integrated in power semiconductor modules |
| CN103684360A (en) * | 2013-12-24 | 2014-03-26 | 国家电网公司 | Implementing method of high-voltage square-wave generator |
| CN203617979U (en) * | 2013-12-24 | 2014-05-28 | 国家电网公司 | High-voltage square-wave generator |
| CN205105184U (en) * | 2015-11-24 | 2016-03-23 | 国家电网公司 | All solid state nanosecond pulser MOSFET drive circuit |
| CN105634441A (en) * | 2016-04-01 | 2016-06-01 | 中国人民解放军军械工程学院 | High-efficiency and double-exponential electromagnetic pulse generation device |
| CN107124163A (en) * | 2017-05-04 | 2017-09-01 | 重庆大学 | A kind of composite mode solid state pulse source |
Non-Patent Citations (1)
| Title |
|---|
| 马力耕, 周君莉, 张素巧, 刘强, 孙大业: "细胞外钙调素对转基因烟草悬浮细胞rbcS-GUS基因表达的促进作用", 科学通报, no. 19 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109307829A (en) * | 2018-11-23 | 2019-02-05 | 西安交通大学 | With the detection device and its detection method of transient earth voltage shelf depreciation on site |
| CN109660030A (en) * | 2018-11-23 | 2019-04-19 | 西安揽智俱应智能科技有限公司 | With the emitter and its launching technique of transient earth voltage shelf depreciation on site |
| CN111313738A (en) * | 2018-12-12 | 2020-06-19 | 西门子医疗有限公司 | High-voltage generator and high-frequency generator for providing high-voltage pulses |
| CN111313738B (en) * | 2018-12-12 | 2023-05-23 | 西门子医疗有限公司 | High-voltage generator and high-frequency generator for providing high-voltage pulses |
| CN109596953A (en) * | 2018-12-20 | 2019-04-09 | 国网北京市电力公司 | Electromagnetic wave launcher and instrument for measuring partial discharge's device |
| CN109900988A (en) * | 2019-03-14 | 2019-06-18 | 合肥格威特电气技术有限公司 | A kind of two fingers number test gimulator of electromagnetic pulse electric current access |
| CN112994658A (en) * | 2021-03-14 | 2021-06-18 | 国网内蒙古东部电力有限公司呼伦贝尔供电公司 | Marx generator-based pulse source with adjustable waveform |
| CN113381740A (en) * | 2021-03-19 | 2021-09-10 | 国网内蒙古东部电力有限公司呼伦贝尔供电公司 | Compact hybrid isolation Marx pulse generator for plasma discharge |
| CN114094988A (en) * | 2022-01-18 | 2022-02-25 | 杭州维纳安可医疗科技有限责任公司 | Pulse generating circuit, equipment and method with pulse detection function |
| CN114094988B (en) * | 2022-01-18 | 2022-09-09 | 杭州维纳安可医疗科技有限责任公司 | Pulse generating circuit, equipment and method with pulse detection function |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107818218B (en) | 2023-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107818218A (en) | A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location | |
| CN109474259A (en) | A kind of high-power pulse generator and high power pulsed source | |
| CN104866000B (en) | Gate driving circuit and method with voltage-stablizer | |
| CN103969527A (en) | Charge-discharge service life detection device of high-voltage ceramic capacitor | |
| Wang et al. | A stage-stage paralleled topology of all-solid-state Marx generator for high current | |
| CN202798435U (en) | High-performance and low-cost IGBT negative voltage bootstrap drive circuit | |
| Rao et al. | Nanosecond pulse generator based on cascaded avalanche transistors and Marx circuits | |
| CN208638253U (en) | System | |
| CN104659774A (en) | Low-voltage input power supply port protection circuit | |
| Wang et al. | Novel repetitive square wave voltage generator used for the insulation evaluation of rotating machines driven by power electronics | |
| CN108712162B (en) | Avalanche transistor series-parallel high-voltage fast-edge switching circuit | |
| CN110247644A (en) | Micro EDM nanosecond pulse power supply based on avalanche transistor | |
| CN104374962B (en) | 10/1,000-microsecond lightning surge generator | |
| CN207397276U (en) | A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location | |
| CN201388190Y (en) | Double-thyristor trigger circuit | |
| CN104660092B (en) | A kind of pulse triggering means for spark gap protection | |
| CN103716027A (en) | Controllable silicon drive circuit | |
| CN201707360U (en) | Long-wave-shaped impulse current generator | |
| CN102355156A (en) | Novel Marx pulse forming circuit | |
| CN106936416A (en) | A kind of reverse switch transistor triggers circuit | |
| CN102025143B (en) | Transient voltage-resistant delay circuit | |
| CN201656939U (en) | Transistor-series high-speed high-voltage solid-state switch | |
| CN103675375A (en) | Inductive discharge high-gradient impact current generator | |
| CN204031103U (en) | The gate protection circuit of IGBT and electromagnetic oven | |
| CN202696455U (en) | Field effect transistor drive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |